Photonic crystal laser
10879669 ยท 2020-12-29
Assignee
- Kyoto University (Kyoto, JP)
- National University Corporation Kyoto Institute Of Technology (Kyoto, JP)
Inventors
Cpc classification
H01S5/06243
ELECTRICITY
H01S5/34313
ELECTRICITY
H01S5/185
ELECTRICITY
H01S2301/203
ELECTRICITY
International classification
H01S5/10
ELECTRICITY
Abstract
A photonic crystal laser 10 is a laser that has a configuration, in which a light emitting layer (an active layer 12) that generates light including light of wavelength .sub.L, and a two-dimensional photonic crystal layer 11 including different refractive index regions (holes 111) disposed two-dimensionally on a plate-like base material 112, the different refractive index regions having a refractive index different from a refractive index of the base material, so that a refractive index distribution is formed, are stacked. Each different refractive index region in the two-dimensional photonic crystal layer 11 is disposed at a position shifted from each lattice point of a basic two-dimensional lattice that has periodicity defined to generate a resonant state of light of the wavelength .sub.L by forming a two-dimensional standing wave and not to emit light of the wavelength .sub.L to outside. A positional shift vector r representing the shift of the position of the different refractive index region at the each lattice point from the lattice point is expressed by
r=d.Math.sin(G.Math.r+.sub.0).Math.(cos(L(+.sub.0)), sin(L(+.sub.0))) by using a wave number vector k=(k.sub.x, k.sub.y) of light of the wavelength .sub.L in the two-dimensional photonic crystal layer 11, an effective refractive index n.sub.eff of the two-dimensional photonic crystal layer, an azimuth angle from a predetermined reference line extending in a predetermined direction from a predetermined origin of the basic two-dimensional lattice, an arbitrary constant .sub.0, and a reciprocal lattice vector G=(k.sub.x|k|(sin cos )/n.sub.eff, k.sub.y|k|(sin sin )/n.sub.eff) expressed by using a spread angle of a laser beam, the position vector r of the each lattice point, arbitrary constants d and .sub.0, and an integer L excluding 0.
Claims
1. A photonic crystal laser having a configuration, in which a light emitting layer that generates light including light of wavelength .sub.L, and a two-dimensional photonic crystal layer including different refractive index regions disposed two-dimensionally on a plate-like base material, the different refractive index regions having a refractive index different from a refractive index of the plate-like base material, so that refractive index distribution is formed, are stacked, wherein each different refractive index region in the two-dimensional photonic crystal layer is disposed at a position shifted from each lattice point of a basic two-dimensional lattice that has periodicity defined to generate a resonant state of light of the wavelength .sub.L by forming a two-dimensional standing wave and not to emit light of the wavelength .sub.L to outside, and magnitude of a shift of a position of a different refractive index region at the each lattice point from the lattice point has modulation in which the magnitude of the shift changes in a predetermined period from a predetermined origin of the basic two-dimensional lattice in a radial direction and in a predetermined period from the predetermined origin in a circumferential direction, and a direction of the shift from the lattice point is different depending on a direction of a straight line connecting the origin and the lattice point.
2. The photonic crystal laser according to claim 1, wherein a planar shape of the different refractive index region is a circle, an ellipse, or a polygon with three or more vertices.
3. The photonic crystal laser according to claim 2, wherein a planar shape of the different refractive index region is a circle or a polygon with six or more vertices.
4. A photonic crystal laser having a configuration, in which a light emitting layer that generates light including light of wavelength .sub.L, and a two-dimensional photonic crystal layer including different refractive index regions disposed two-dimensionally on a plate-like base material, the different refractive index regions having a refractive index different from a refractive index of the plate-like base material, so that refractive index distribution is formed, are stacked, wherein each different refractive index region in the two-dimensional photonic crystal layer is disposed at a position shifted from each lattice point of a basic two-dimensional lattice that has periodicity defined to generate a resonant state of light of the wavelength .sub.L by forming a two-dimensional standing wave and not to emit light of the wavelength .sub.L to outside, and a positional shift vector r representing a shift of a position of a different refractive index region at the each lattice point from the lattice point is expressed by
r=d.Math.sin(G.Math.r+.sub.0).Math.(cos(L(+.sub.0)), sin(L(+.sub.0))) by using a wave number vector k=(k.sub.x, k.sub.y) of light of the wavelength .sub.L in the two-dimensional photonic crystal layer, an effective refractive index n.sub.eff of the two-dimensional photonic crystal layer, an azimuth angle from a predetermined reference line extending in a predetermined direction from a predetermined origin of the basic two-dimensional lattice, an arbitrary constant .sub.0, and a reciprocal lattice vector G=(k.sub.x|k|(sin cos )/n.sub.eff, k.sub.y|k|(sin sin )/n.sub.eff) expressed by using a spread angle of a laser beam, the position vector r of the each lattice point, arbitrary constants d and .sub.0, and an integer L excluding 0.
5. The photonic crystal laser according to claim 4, wherein a value of L is +1 and a value of .sub.0 is 90.
6. The photonic crystal laser according to claim 5, wherein a planar shape of the different refractive index region is a circle, an ellipse, or a polygon with three or more vertices.
7. The photonic crystal laser according to claim 6, wherein a planar shape of the different refractive index region is a circle or a polygon with six or more vertices.
8. The photonic crystal laser according to claim 4, wherein a planar shape of the different refractive index region is a circle, an ellipse, or a polygon with three or more vertices.
9. The photonic crystal laser according to claim 8, wherein a planar shape of the different refractive index region is a circle or a polygon with six or more vertices.
Description
BRIEF DESCRIPTION OF DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
(13)
(14)
(15)
DESCRIPTION OF EMBODIMENTS
(16) An embodiment of the photonic crystal laser according to the present invention will be described with reference to
(17)
(18) First, a configuration of each layer other than the two-dimensional photonic crystal layer 11 will be described. The active layer 12 corresponds to the light emitting layer, and when electric charges are injected by passing a current between the lower electrode 151 and the upper electrode 152, light of a wavelength within a predetermined wavelength range corresponding to a material of the active layer 12 is emitted. For the active layer 12, for example, one having a Multiple-Quantum Well (MQW) including indium gallium arsenide/gallium arsenide (InGaAs/GaAs) can be used. The active layer 12 emits light of a wavelength in the range of 960 to 990 nm. A p-type semiconductor is used for the lower cladding layer 131 and the lower substrate 141, and an n-type semiconductor is used for the upper cladding layer 132 and the upper substrate 142. For example, p-type semiconductor gallium arsenide (GaAs) can be used for the lower substrate 141, n-type GaAs can be used for the upper substrate 142, p-type semiconductor aluminum gallium arsenide (AlGaAs) can be used for the lower cladding layer 131, and n-type AlGaAs can be used for the upper cladding layer 132. Note that, an n-type semiconductor may be used for the lower cladding layer 131 and the lower substrate 141, and a p-type semiconductor may be used for the upper cladding layer 132 and the upper substrate 142.
(19) In the present embodiment, one provided with a window (cavity) 1521 provided at the center of a film made from metal, such as gold, is used for the upper electrode 152. A laser beam generated by the photonic crystal laser 10 is emitted out of the photonic crystal laser 10 through the window 1521. As the upper electrode 152, a transparent electrode made from indium tin oxide (ITO) or the like may be used instead of the one having the window 1521. In the present embodiment, a film made from metal, such as gold, whose area is smaller than that of the window 1521 of the upper electrode 152 is used for the lower electrode 151. A shape of the lower electrode 151 is circular in the present embodiment, but is not considered in particular.
(20) Next, a configuration of the two-dimensional photonic crystal layer 11 will be described. As shown in
(21) The arrangement of the hole 111 in the base material 112 will be described with reference to
(22) The lattice constant a of the basic two-dimensional lattice is preferably determined so as to be a=2.sup.1/2.sub.L/n.sub.eff, after selecting the wavelength .sub.L for laser oscillation from the wavelength range of 960 to 990 nm in which the active layer 12 emits light. Here, the lattice constant a is preferably determined based on a ratio (filling factor) of the volume occupied by the hole 111 in the two-dimensional photonic crystal layer 11 and a refractive index of a material of the base material 112. In the present embodiment, the effective refractive index n.sub.eff of the two-dimensional photonic crystal layer 11 is 3.4.
(23) In the present embodiment, in order to obtain a radially polarized annular laser beam, in Equation (1) described above, L=+1, .sub.0=90. Further, a spread angle of the laser beam is an arbitrary value (for example, =1). The azimuth angle at each lattice point is represented by an angle formed by a straight line connecting the origin 1131 and the lattice point with respect to the reference line 1132 (
(24) Since the basic two-dimensional lattice is a square lattice, the reciprocal lattice vector G for each lattice point is obtained by substituting values of the effective refractive index n.sub.eff and the azimuth angle at the lattice point into Equation (2). Then, the positional shift vector r for each lattice point is obtained by substituting L=1 and .sub.0=90, and the position vector r and the reciprocal lattice vector G for each lattice point into Equation (1). Note that the value of d in Equation (1) is arbitrary.
(25) From Equation (1), a direction of the positional shift vector r is generally determined by a vector (cos(L(+.sub.0)), sin(L(+.sub.0)), and is determined by a vector (cos(+)/2), sin(+/2)) in the present embodiment. Therefore, in the present embodiment, the center of gravity 111G of the hole 111 is disposed at a position shifted in a direction rotated by (+/2) radians, that is, (+90) from the direction of the reference line at each lattice point (
(26) On the other hand, a distance of a shift of the center of gravity 111G of the hole 111 from the lattice point is determined by d sin(G.Math.r). Since G and r are vectors different for each lattice point, the distance of a shift from the lattice point is also a value different for each lattice point.
(27) Since the hole 111 is disposed at a position shifted from a lattice point as described above at each lattice point, the laser beam generated by the photonic crystal laser 10 becomes a radially polarized annular laser beam. Hereinafter, the reason for the above will be described.
(28) (a) Reason Why the Laser Beam becomes Radially Polarized Light
(29) First, unlike the present embodiment, a case where the holes 111 are shifted in the same direction at all lattice points will be examined. In the upper diagram of
(30) In place of a vector, an example in which is 30, is 0, and .sub.0 is 0 in a factor d sin(G.Math.r+.sub.0) representing the magnitude of a shift is shown. The direction of a shift of the hole 111 is the y direction in
(31) Next, unlike the present embodiment and the example of
(32) When the results of
(33) Therefore, when the spots of these laser beams are collected within a range of the azimuth angles from 0 to 360, a laser beam having a cross section of a ring shape is formed (a broken line in
(34) Similarly, as shown in
(35) Further, when the value of L is an integer other than +1 (the above embodiment) and 0 (out of the range of the present invention), an annular laser beam having polarization corresponding to the value of L can be obtained.
(36)
(37) For the laser beams in the cases of L=+1, .sub.0=90 and L=1, .sub.0=90 shown in
(38)
(39)
(40) The present invention is not limited to the above embodiment. For example, although the shape of the hole (different refractive index region) 111 is circular in the above embodiment, it may be various shapes, such as an equilateral triangle or another triangle, a polygon including a triangle, or an ellipse. Further, instead of the hole 111, a member (different refractive index member) having a refractive index different from a refractive index of the base material 112 may be used for the different refractive index region. While a hole is excellent in that it can be easily processed, the different refractive index member is advantageous in a case where there is possibility that the base material is deformed by heating or the like at the time of processing. Furthermore, the basic two-dimensional lattice is not limited to the square lattice, and a triangular lattice, a rectangular lattice, or the like may be used. In a case of using a triangular lattice or a rectangular lattice, the positional shift vector r obtained by substituting the reciprocal lattice vector G shown in any of Equations (3) to (5) into Equation (1) is preferably used to set a position of the different refractive index region.
INDUSTRIAL APPLICABILITY
(41) The photonic crystal laser according to the present invention can obtain an annular laser beam having desired polarization distribution, and can have a large output power since it can resonate in a large area, and has an oscillation mode called TE mode. Due to these excellent features, the photonic crystal laser according to the present invention can be suitably used in many devices, such as a high resolution microscope, various measuring instruments and analyzers, a laser processing machine, and an OCT diagnostic device.
REFERENCE SIGNS LIST
(42) 10 . . . Photonic Crystal Laser 11 . . . Two-dimensional Photonic Crystal Layer 111, 111V . . . Hole (Different Refractive Index Region) 111G . . . Center of Gravity 112 . . . Base Material 1131 . . . Origin 1132 . . . Reference Line 1133 . . . Line Orthogonal to Reference Line 1134 . . . Line Crossing Reference Line at Angle of 45 12 . . . Active Layer (Light Emitting Layer) 131 . . . Lower Cladding Layer 132 . . . Upper Cladding Layer 141 . . . Lower Substrate 142 . . . Upper Substrate 151 . . . Lower Electrode 152 . . . Upper Electrode 1521 . . . Window of Upper Electrode 201, 201A, 201B, 202, 202A, 202B, 203, 203A . . . Spot of Laser Beam 81 . . . Cross Section of Radially Polarized Annular Laser Beam 83 . . . Lens 90 . . . Basic Two-dimensional Lattice 91, 911, 912 . . . Lattice Point