THIN FILMS OF NICKEL-COPPER BINARY OXYNITRIDE (NICUOxNy) AND THE CONDITIONS FOR THE PRODUCTION THEREOF

Abstract

Thin films of nickel-copper binary oxynitride (NiCuO.sub.xN.sub.y) were deposited on the surface of AISI 3161 stainless steel and glass substrates using reactive phase RF sputtering with a thickness between 700 and 2100 nm under different deposition conditions from a bimetallic precursor target of nickel and copper under specific conditions, such as: base pressure, working pressure, argon flow, oxygen flow, nitrogen flow, power the NiCu precursor target, target-substrate distance and deposition time. The films were characterized and made it possible to carry out a preliminary study of biocompatibility and a characterization according to their optical properties

Claims

1-11. (canceled)

12. A thin film of a nickel-copper binary oxynitride wherein said nickel-copper binary oxynitride has the chemical formula NiCuOxNy wherein the value of x is between 0.25 and 1.0; and the value of y is between 0.5 and 0.8.

13. The thin film of nickel-copper binary oxynitride (NiCuOxNy) according to claim 12, wherein said film has a thickness between 700 and 2100 nm and wherein said thin film is deposited on a solid substrate of stainless steel AISI 316L and/or glass (1).

14. A process for the manufacture of the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) of claim 12, comprising the following steps: (a) polishing the surface of a stainless steel AISI 316L substrate up to a granulometry between 500 and 700 grit; (b) cleaning the substrate with distilled water and isopropanol; (c) inserting the cleaned substrate of step (b) in a sample holder (18) of the vacuum chamber of a PVD-Magnetron Sputtering RF reactor; (d) injecting into the vacuum chamber argon (6) gas and oxygen (7) and nitrogen (8) as reactive gases; (e) turning on the radiofrequency source and the magnetron located inside the vacuum chamber on which the cathode or target (3) is located, containing the copper and nickel elements to be deposited; (f) depositing a thin film of the nickel-copper binary oxynitride coating by RF reactive sputtering at a base pressure between 3.010.sup.3 and 3.510.sup.3 Pa; and (g) depositing a film of nickel-copper binary oxynitride coating by RF reactive sputtering at a working pressure between 7.210.sup.1 and 7.610.sup.1 Pa.

15. The process for the manufacture of the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein the inert gas is argon (6) and the flow of this gas in the chamber of Vacuum is between 18.0 and 22.0 sccm.

16. The process for the manufacture of the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein the reactive gases are oxygen (7) and nitrogen (8), where the flow of oxygen remains constant at 2.00 sccm and nitrogen between 4.00 and 18.0 sccm.

17. The process for manufacturing the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein the target or cathode (3) is nickel (99.9% in purity) and copper (99.9% in purity) with nickel composition between 14% and 90% by weight.

18. The process for manufacturing the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein the temperature of the substrate (1) during deposition is between 323 K and 573 K.

19. The process for manufacturing the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein the target power is between 200 and 350 W, constant blank-substrate distance of 5.0 cm and the constant deposit time of 60 minutes.

20. The process for the fabrication of the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein at the operating conditions: nitrogen flow between 10.0 and 18.0 sccm, blank composition 72% Ni28% Cu, temperature 433 K and power 250 W, the coating is biocompatible according to ISO Classification 10993-12.

21. The process for the manufacture of the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein at the operating conditions: nitrogen flow 10.0 sccm, blank composition 90% Ni10% Cu, temperature 433 K and power 250 W, the film generates a coating of hydroxyapatite greater than 39% of the surface of the material, which favors osseointegration, and has a nickel release rate under simulated physiological conditions (0.103 g of nickel/cm.sup.2/week).

22. The process for the manufacture of the nickel-copper binary oxynitride thin film (NiCuO.sub.xN.sub.y) according to claim 14, wherein at the operating conditions: nitrogen flow between 4.00 and 18.0 sccm, composition of the target bimetallic Ni:Cu between 14% and 90% in nickel, temperature between 323 K and 573 K, and power between 200 and 350 W, the film obtained has a band gap energy between 0.8 and 2.5 eV; has Urbach energy between 0.7 and 2.8 eV; has static refractive index between 1.8 and 2.98; is absorbent in the UV-vis range with wavelengths between 200 and 800 nm; have transmittance in the infrared region of the electromagnetic spectrum between 800 and 2500 nm.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0028] FIG. 1a and FIG. 1b depicts a schematic of the material with ceramic properties claimed and an image of some of the NiCuO.sub.xN.sub.y products obtained in the present invention. In FIG. 1a, the support (102) of NiCuO.sub.xN.sub.y material is a substrate of AISI 316L stainless steel previously polished to 600 grit; this support is partially or completely covered by a thin film of binary nickel-copper oxynitride NiCuO.sub.xN.sub.y (101), where the nickel and copper atoms are arranged in a solid solution forming covalent bonds with the atoms of oxygen and nitrogen. FIG. 1.b shows a photograph of the product NiCuO.sub.xN.sub.y-10.sub.43372.sub.250 manufactured.

[0029] FIG. 2 depicts a simplified diagram of the procedure used to manufacture thin films of binary nickel-copper oxynitride NiCuO.sub.xN.sub.y on the surface of stainless steel AISI 316L by the technique of sputtering RF in reactive phase. The substrates (1) of stainless steel AISI 316L are arranged in the sample holder (2) of the vacuum chamber; the cathode is composed of a nickel-copper target (3) with nickel composition between 72% and 90%; vacuum is generated by means of a mechanical pump and a turbomolecular (4). The plasma (5) is generated by means of argon gas (6); Oxygen (7) and nitrogen (8) reactive gases are used, whose pressures and flows are controlled by means of valves (9) and flow meters (10). Once the working pressure is established between 7.210-1 and 7.610-1 Pa, it begins with the deposit of the coatings of NiCuOxNy by supplying the power (11) to the NiCu target; the power and temperature of the oven (12) is monitored throughout the process by means of a thermocouple (13) disposed on the steel substrates (1), which is connected to the temperature controller (14) of the power source of the oven (15). The shutter (16) protects the substrates during the cathodic pre-sputtering stage in which possible interferences from the surface of the NiCu target are eliminated.

[0030] FIG. 3 shows a comparison between the diffractograms obtained for the AISI 316L steel (301) and the NiCuOxNy-1843372250 (302) and NiCuOxNy-1043372250 (303) products obtained by the claimed conditions. The X-ray diffraction signals corresponding to copper oxide (CuO), nickel-copper oxynitride (NiCuOxNy) and austenite of the AISI 316L stainless steel substrate, obtained when compared against the X-Pert database.

[0031] FIG. 4a and FIG. 4b depict the images obtained by scanning electron microscopy (SEM) for the products NiCuOxNy-1857372250 (FIG. 4a) and NiCuOxNy-1843390250 (FIG. 4b) with a magnification of 20000 and scale of 5.0 m.

[0032] FIG. 5a and FIG. 5b shows one of the images obtained by nanosem for the product NiCuOxNy-1843314250 (FIG. 5a) and the image obtained by atomic force microscopy (MFA) for the product NiCuOxNy-843390250 (FIG. 5b).

[0033] FIG. 6a, FIG. 6b, FIG. 6c and FIG. 6d presents the high resolution spectra for O 1s (FIG. 6a), N 1s (FIG. 6b), Ni 2p (FIG. 6c) and Cu 2p (FIG. 6d), obtained from spectroscopy of x-ray photoelectrons (XPS) for the product NiCuOxNy-1043372250.

[0034] FIG. 7a and FIG. 7b depict one of the images obtained by fluorescence microscopy (magnification 10, scale 500 nm) of mouse osteoblasts C57BL/6 cell line seeded on the surface of the product NiCuOxNy-1843372250 (FIG. 6a). In addition, one of the images obtained by scanning electron microscopy (SEM) of the mouse osteoblasts (cell line C57BL/6) seeded on the surface of the product NiCuOxNy-1843372250 (FIG. 6.b) is shown.

[0035] FIG. 8a and FIG. 8b shows the images obtained by scanning electron microscopy (SEM) of the hydroxyapatite crystals HAP formed by hydrothermal treatment on the surface of the product NiCuOxNy-1043390250 with magnification 100'3 (FIG. 6a) and 1000 (FIG. 6b).

[0036] FIG. 9 depicts the voltammogram obtained for the determination of the Ni2.sup.+ ion release rate for the product NiCuOxNy-1043390250 at time t=192 h after 8 successive additions of standard Ni2.sup.+ solution 283.5 ppb.

[0037] FIG. 10 is the calibration curve obtained for the voltammetrogram of the product NiCuOxNy-1043390250 at time t=192 h.

[0038] FIG. 11 shows the transmittance spectrum of the products NiCuOxNy-457314200, NiCuOxNy-457314250 and NiCuOxNy-457314300 deposited in thin film form on glass substrates by the reactive RF sputtering method, obtained by applying a target power of 200, 250 and 300 W, respectively.

[0039] FIG. 12 depicts the variation of the absorption coefficient of the products NiCuOxNy-457314200 (N4W200), NiCuOxNy-457314250 (N4W250) and NiCuOxNy-457314300 (N4W300) as a function of the wavelength (). The products were deposited in thin film form on glass substrates by the sputtering method in RF reactive phase, applying a target power of 200, 250 and 300 W, respectively.

[0040] FIG. 13 shows the variation of the factor (hu)2 with the energy of the incident photon (hu). The highest degree of linearity was obtained for the optical transition mode factor n= 1/2 indicating that a direct transition allowed in the NiCuOxNy material takes place. The determination of the optical gap energy (Eg) is shown for the products NiCuOxNy-457314200 (N4W200), NiCuOxNy-457314250 (N4W250) and NiCuOxNy-457314300 (N4W300) deposited in thin film form on glass substrates by the method of cathode sputtering in RF reactive phase, obtained by applying a power to the target of 200, 250 and 300 W, respectively.

DETAILED DESCRIPTION OF THE INVENTION

[0041] The following is a detailed description of each of the stages of the procedure performed:

1. Preparation of the Substrate Surface

[0042] AISI 316L stainless steel sheets were cut by a Struers Labotom-3 cutter to obtain specimens of certain dimensions (1.01.5 cm in a preferred case). Subsequently, a metallographic preparation was carried out with 80, 240, 320 and 600 grit silicon carbide sandpapers in a Knuth Rotor-3 chipper cooled with water. Once the 600 grit finish was reached, the surface of the specimens was examined under the optical microscope until a homogeneous surface appearance was confirmed.

[0043] Once polished, each test piece was washed with liquid soap and tap water in order to remove organic and inorganic impurities. To remove the remaining organic impurities, a surface cleaning of the substrate with isopropanol was performed. This process was carried out to remove as much impurities as could interfere with the adhesion of the NiCuO.sub.xN.sub.y coating to the substrate.

2. Cleaning the Nickel-Copper Target by Sputtering with Argon Plasma

[0044] In order to deposit the thin films of binary nickel-copper oxynitride on the surface of substrates made of AISI 316L stainless steel, an Alcatel model HS 2000 cathode sputtering equipment was used. The equipment comprises a DC source, a 13.8 MHz RF source with variable power from 0 to 1 KW and a vacuum device integrated by a chamber, two vacuum pumps (mechanical and turbomolecular), reactive gas inlet, inert gas inlet, flow controllers and pressure controllers.

[0045] Different deposit conditions were used: blank composition, temperature, power applied to the target and nitrogen flow. For this, a bimetallic blank precursor of nickel (99.9% in purity) and copper (99.9% in purity) of dimensions 4 with nickel composition between 14% and 90% by weight was used. The blank-substrate distance was adjusted to 5.0 cm and remained constant in all experiments. Argon (99.999% purity) was used as the inert gas generating the plasma, and as reactive gases nitrogen (99.999% purity) and oxygen (99.999% purity).

[0046] The AISI 316L stainless steel substrates of the first step were placed in the sample holder of the vacuum chamber of the RF sputtering equipment. Before starting with the deposition of thin films NiCuO.sub.xN.sub.y, blank cleaning was performed by sputtering to remove interferents that may affect the final composition of the coatings.

[0047] In the step of cleaning the target by cathodic spraying, substrates of AISI 316L steel were protected with the shutter and vacuum was made with the mechanical pump until reaching a pressure between 1.010.sup.1 and 1.510.sup.1 Pa. Once this pressure was reached, the turbo molecular pump was ignited until reaching a base pressure between 3.010.sup.3 and 3.510.sup.3 Pa and simultaneously, heating of the oven was started at a temperature between 433 K and 573 K with a ramp of 4 C./min. Vacuum was carried out for 2.5 h before starting the discharge. Then, the discharge power unit was switched on (power between 240 and 350 W) and argon was fed to the system (flow of Ar between 18.0 and 22.0 sccm) until reaching a pressure between 4.010.sup.1 and 4.510.sup.1 Pa. The stage of plasma cleaning of Ar.sup.+ lasted for 5 min.

3. Deposit of the Thin Films of Binary Nickel-Copper Oxynitride (NiCuO.SUB.x.N.SUB.y.) on the Surface of Stainless Steel AISI 316L

[0048] After the Ar.sup.+ plasma cleaning step, maintaining a constant Ar pressure between 4.010.sup.1 and 4.510.sup.1 Pa and an Ar flow between 18.0 and 22.0 sccm, nitrogen is slowly fed into the system until reaching a pressure between 5.010.sup.3 and 5.510.sup.3 Pa. In this step, different nitrogen fluxes (N.sub.2 flow between 8.00 to 18.0 sccm) were used in order to obtain films with different deposit conditions. Once the pressure remained stable, oxygen was slowly fed at a constant flow of 2.00 sccm into the chamber until reaching a working pressure between 7.210.sup.1 and 7.610.sup.1 Pa.

[0049] Once the reactive gas mixture was fed to the chamber, the shutter was removed to allow the deposition of nickel-copper binary oxynitride (NiCuO.sub.xN.sub.y) coatings in thin film form and started with the deposit time count 60 min. Throughout the process it was verified that the working pressure, gas flows and target power were maintained within the ranges indicated above. As an example, FIG. 1a depicts the scheme of the material with ceramic properties claimed and FIG. 1b shows a photograph of the product NiCuO.sub.xN.sub.y-1043372250 (whose deposit conditions are mentioned below) obtained in the present invention, where (101) corresponds to the substrate of stainless steel AISI 316L and (102) the coating of NiCuO.sub.xN.sub.y in the form of thin film deposited by sputtering RF in reactive phase.

[0050] FIG. 2 shows a simplified scheme of the process used to manufacture thin films of binary nickel-copper oxynitride NiCuO.sub.xN.sub.y on the surface of AISI 316L stainless steel by the RF sputtering technique in reactive phase. The system consists of substrates (1) of stainless steel AISI 316L, a sample holder (2), blank NiCu (3), vacuum system (4) composed of a mechanical pump and a turbomolecular, plasma (5) of argon as inert gas (6), the reactive gases oxygen (7) and nitrogen (8), gas valves (9), flow controllers (10), potential source (11), furnace (12), thermocouple (13)), controller temperature (14), oven power source (15) and shutter (16) to protect the substrates during the cleaning stage.

[0051] Table I shows some of the NiCuO.sub.xN.sub.y products obtained in the present invention under the claimed conditions.

TABLE-US-00001 TABLE I Deposit conditions for some thin NiCuOxNy films deposited on AISI 316L stainless steel by the RF sputtering technique in reactive phase. Ni Composition N.sub.2 Flow Temperature Power Material Code (%) (sccm) (K) (W) NiCuO.sub.xN.sub.y-10.sub.43390.sub.250 90 10 433 250 NiCuO.sub.xN.sub.y-18.sub.43390.sub.250 90 18 433 250 NiCuO.sub.xN.sub.y-18.sub.57390.sub.250 90 18 573 250 NiCuO.sub.xN.sub.y-18.sub.57372.sub.250 72 18 573 250 NiCuO.sub.xN.sub.y-18.sub.43372.sub.250 72 18 433 250 NiCuO.sub.xN.sub.y-10.sub.43372.sub.250 72 10 433 250 NiCuO.sub.xN.sub.y-10.sub.57390.sub.250 90 10 573 250 NiCuO.sub.xN.sub.y-4.sub.573l4.sub.200 14 4 573 200 NiCuO.sub.xN.sub.y-4.sub.57314.sub.250 14 4 573 250 NiCuO.sub.xN.sub.y-4.sub.573l4.sub.300 14 4 573 300 NiCuO.sub.xN.sub.y-10.sub.32372.sub.350 72 10 323 350

4. Characterization of the Thin Films of Binary Nickel-Copper Oxynitride (NiCuO.SUB.x.N.SUB.y.) Obtained

[0052] The characterization of the product obtained was carried out by X-ray diffraction (XRD) using a Philips diffractometer operated at 30 kV and 20 mA, working in the Bragg-Brentano configuration with the Ka radiation of Cu. The morphology of the surface as well as a semi-quantitative measurement of its Cu and Ni composition was analyzed by scanning electron microscopy (SEM) with EDX (X-ray dispersive energy spectroscopy) with a Quanta 2000 MEB microscope operated at 15 kV and 10 mA. The thickness of the NiCuO.sub.xN.sub.y coatings was determined by a DEKTAK 150 profilometer with a resolution of 0.056 m. A sweep of 2000 m was recorded for 120 s. The applied force was 1 mg. The measurement was made by the difference between the coated area and the uncoated zone obtained from a silicon step that is placed before the deposit and then removed before measuring the thickness.

[0053] The roughness of the coatings and the particle size was determined by atomic force microscopy in an Auto-probe CP5 instrument from Park Scientific Instruments, operating in non-contact mode. Each of the 3D images was processed using the PSI ProScan Image Processing software. The tip radius used was 10 nm and the study area was 25 mm.sup.2, with frequencies of 2 and 10 Hz.

[0054] FIG. 3 shows a comparison between the X-ray diffractograms obtained for the AISI 316L stainless steel substrate (301) and the manufactured products: NiCuO.sub.xN.sub.y-1843372250 (302) and NiCuO.sub.xN.sub.y-1043372250 (303). The X-ray diffraction signals corresponding to copper oxide (CuO), nickel-copper oxynitride (NiCuO.sub.xN.sub.y) and austenite of the AISI 316L stainless steel substrate, obtained when compared against the X-Pert database, are shown.

[0055] In general, the deposit parameters strongly determine the surface characteristics of the final coating; some of the manufactured NiCuO.sub.xN.sub.y films presented amorphous characteristics, while others are polycrystalline (such as the product NiCuO.sub.xN.sub.y-1043372250) or grow preferentially in a crystalline plane (for example the product NiCuO.sub.xN.sub.y-1843372250) depending on the type of substrate, temperature, nitrogen flow and proportion of nickel in the final coating.

[0056] Also, some NiCuO.sub.xN.sub.y films showed growth crystalline preferential at 2=37, signal that does not correspond with any of the diffraction signals reported in the X-Pert database and with that reported in the literature for the oxides and nitrides of the two individual metals (monoclinic phase CuO JCPDS 00-001-1117; cubic system NiO JCPDS 00-047-1049, cubic phase Cu3N JCPDS 86-2283 and hexagonal system Ni3N JCPDS 10-0280) whereby this signal is attributed to the formation of binary oxynitride nickel -copper (NiCuO.sub.xN.sub.y).

[0057] On the other hand, profilometry analysis allowed to determine that the thickness of the thin NiCuO.sub.xN.sub.y films manufactured is between 700 to 2100 nm depending on the deposit conditions.

[0058] FIG. 4a and FIG. 4b show the images obtained by scanning electron microscopy (SEM) obtained for the products NiCuO.sub.xN.sub.y-1857372250 (FIG. 4a) and NiCuO.sub.xN.sub.y-1843390250 (FIG. 4b) with a magnification of 20000 and scale of 5.0 where it can be seen that the deposition conditions determine the surface morphology of the products manufactured in the present invention. Finally, the results of the X-ray dispersive energy (EDX) analysis corroborated the presence of copper and nickel in the manufactured films.

[0059] FIG. 5a and FIG. 5b show one of the images obtained by nanosem for the product NiCuO.sub.xN.sub.y-1843314250 (FIG. 5a) and the image obtained by atomic force microscopy (MFA) for the product NiCuO.sub.xN.sub.y-843390250 (FIG. 5b).

[0060] The chemical composition of the NiCuO.sub.xN.sub.y thin films was determined from X-ray photoelectron spectroscopy (XPS). The high-resolution spectra were recorded on the surface and after a 1-minute cleaning with Ar.sup.+ to evaluate the stability of the coating with the atmosphere. FIG. 6a, FIG. 6b, FIG. 6c and FIG. 6d show the high-resolution spectra for oxygen (O1s) (FIG. 6a), nitrogen (N1s) (FIG. 6b), nickel (Ni2p) (FIG. 6c) and copper (Cu2p) (FIG. 6d). The signals for O1 to ligature energies (BE) of 533.1, 531.6 and 529.8 eV on the surface of the film indicate presence of OH groups product of the interaction of the film with atmospheric water vapor, at 531.6 eV are characteristic of oxynitrides and identify the binding energy for NiCuO.sub.xN.sub.y and the signal at 529.8 eV indicates the presence of oxides of the corresponding metals. After a 1-min cleaning with Ar.sup.+ ion, the oxide to oxynitride ratio is 60:40 according to the area under the curve and there is no displacement in the binding energy of any of the species present in the film, which shows the stability of the film against the atmosphere.

[0061] For N1s the binding energy at 397.7 eV and 399.3 eV, indicate the presence of two different chemical species of NiCuO.sub.xN.sub.y oxynitride, wherein the degree of substitution of oxygen by nitrogen is greater for the former, in comparison with the signal at 399.3 eV, where the highest BE indicates greater electronegativity due to the greater oxygen composition. For metals, the spectrum for Ni2p is typical of nickel oxide. However, the separation range of doublet Ni2p3/2 and Ni 2p1/2 is 17.8 eV, lower by 0.6 eV than that reported for NiO (18.4 eV); this indicates changes in the electronegativity generated by the substitution of oxygen by nitrogen (Liu, H., et al., 2008; Ai, L, et al., 2008, Zhang, Y., et al., 2015). For the copper spectrum, the signal at 932.5 eV for Cu 2p3/2 and at 952.33 eV for Cu 2p1/2 corresponds to Cuo or Cu1+; However, the absence of satellites characteristic of Cu2O due to its closed layer configuration ([Ar] 3d10) allows to eliminate the presence of Cuo and confirm that of Cu.sup.+ (Peng, D., et al., 2006; Hossaina, M., et al., 2017; Platzman, I., et al., 2008).

[0062] In order to determine the deposition conditions under which highly biocompatible NiCuO.sub.xN.sub.y thin films are obtained, different biocompatibility analyzes were performed as shown below.

5. Biocompatibility Assays of Thin NiCuOxNy Films

[0063] To evaluate the biocompatibility properties of the synthesized nickel-copper binary oxynitride films and determine the most suitable deposition conditions for obtaining thin films of NiCuO.sub.xN.sub.y biocompatible, four tests were performed: MTT cell viability analysis, cell count of osteoblasts on the surface of the film synthesized from NiCuO.sub.xN.sub.y by fluorescence microscopy, formation of hydroxyapatite on the surface and analysis of the biodegradability of the films in vitro under simulated physiological conditions by means of the determination of the rate of release of the Ni.sup.2+ ion from the surface of the coating by the technique of voltammetry of adsorptive cathodic redissolution by square wave (VRCAdOC).

5.1 MTT Cell Viability Assay

[0064] Cell viability analyzes were carried out with mouse osteoblasts (cell line C57BL/6). 7000 cells were seeded per cm.sup.2 of surface area of each NiCuO.sub.xN.sub.y product manufactured. Cells were incubated at 37 C. and 5% CO.sub.2 with supplemented medium Dulbecco modified Eagle (DMEM, Thermo Fisher Scientist, USA) at 10% v/v in fetal bovine serum (SFB), 50 g/mL ascorbic acid, 10 mM -glycerophosphate and Clavamox 1 as an antibiotic. The incubation time was 72 hours. After this time, the medium was discarded and 50 L of MTT reagent (3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) of concentration 50 mg/mL together with 1.5 mL of DMEM medium in each sample was added. It was incubated at 37 C. and 5% C02 for 4 hours. After this time, the purple formazan crystals were dissolved in 1.5 mL of 1% SDS in 0.01 M HCl and 100 L of solution from each MTT well were taken to a 96-well box. Finally, the measurement of absorbance (Abs) was made in a Bio-Rad ELISA spectrophotometer at 570 nm.

[0065] The results showed that the product NiCuO.sub.xN.sub.y-1857390250 is about 1.5 times more biocompatible with mouse osteoblasts than the AISI 316L steel used as a reference. However, it was observed that some of the products of NiCuO.sub.xN.sub.y manufactured are unstable against the action of the tetrazolium salt (MTT), for which reason it was decided to evaluate the cellular viability of the material by means of another highly sensitive technique: fluorescence microscopy.

5.2 Cell Count by Fluorescence Microscopy

[0066] Seven thousand osteoblasts were seeded per cm.sup.2 of surface area of the thin films of binary nickel-copper oxynitride (NiCuO.sub.xN.sub.y) synthesized under different deposition conditions. The samples were incubated with 1.5 mL of medium supplemented DMEM 10% SFB with the stimuli mentioned above (ascorbic acid and -glycerophosphate) at 37 C. and 5% C0.sub.2 for 72 hours. After this time, the medium was discarded, the samples were washed in duplicate in phosphate buffered saline (BFS) pH 7.4 and 1.5 mL of fluorescent marker solution Hoechst 33342 of concentration 5 g/mL in BFS pH 7.4 was added. The samples were incubated for 30 minutes and washed with BFS three times in order to eliminate excess marker. The amount of osteoblasts adhered to the surface of the material was determined by nucleus counting in an Olympus BX41 fluorescence microscope and the ImageJ computer program. The data were analyzed for the number of osteoblasts/cm.sup.2 of surface area and the degree of biocompatibility was determined by comparison with what was established in ISO 10993-12 for biomaterials.

[0067] FIG. 7a shows one of the images obtained by fluorescence microscopy (magnification 10, scale 500 nm) of mouse osteoblasts cell line C57BL/6 seeded on the surface of the product NiCuO.sub.xN.sub.y-1843372250.

[0068] Table II shows the biocompatibility results obtained for some of the NiCuO.sub.xN.sub.y products manufactured. The classification of some of the products obtained in the present invention according to the international standard ISO 10993-12 (In Vitro Cytotoxicity Tests: Biological Evaluation of Medical Devices) is shown, based on the results of the biocompatibility analysis by microscopy of fluorescence. The same analysis was performed with a nickel substrate electrolytic grade by way of comparison.

TABLE-US-00002 TABLE II Classification of some of the thin films deposited on NiCuOx N.sub.y steel AISI 316L according to ISO 10993-12. Where (AB): highly biocompatible, (BC): biocompatible, (MC): moderately cytotoxic, and (CT): cytotoxic. ISO 10993-12 Material Classification Code NiCuO.sub.xN.sub.y-10.sub.43390.sub.250 BC NiCuO.sub.xN.sub.y-18.sub.43390.sub.250 CT NiCuO.sub.xN.sub.y-18.sub.57372.sub.250 MC NiCuO.sub.xN.sub.y-18.sub.43372.sub.250 AB NiCuO.sub.xN.sub.y-10.sub.43372.sub.250 AB NiCuO.sub.xN.sub.y-10.sub.57390.sub.250 BC

5.3 Cell Morphology by Scanning Electron Microscopy

[0069] The morphology of the osteoblasts adhered to the surface NiCuO.sub.xN.sub.y films was determined by scanning electron microscopy (SEM) in a Quanta 2000 microscope operated at 15 kV and 10 mA. A sample of AISI 316L steel polished at level 600 with silicon carbide was used as a target. 7000 cells/cm.sup.2 were seeded on each NiCuO.sub.xN.sub.y film and the system was incubated at 37 C. and 5% CO.sub.2 for 72 hours with supplemented medium DMEM at 10% SFB. The osteoblasts were fixed on the surface of the material according to what was reported by (Hosseini, S., et al., 2014): the samples were immersed in a 2.5% glutaraldehyde solution in BFS 0.1 M pH 7.4 for 4 hours. Then, the samples were washed twice with BFS and the cells were dehydrated by immersion in aqueous ethanol solutions of increasing concentrations for 10 minutes each (in order): 30%, 50%, 60%, 80% and 96% v/v. The samples were allowed to dry in a desiccator at room temperature for two hours before analysis by MEB microscopy. The results showed that in general, the osteoblastic cells used for the analysis are capable of forming different anchor points with different products of the claimed material.

[0070] FIG. 7b shows one of the images obtained by scanning electron microscopy (SEM) of the mouse osteoblasts (cell line C57BL/6) seeded on the surface of the product NiCuO.sub.xN.sub.y-1843372250.

5.4 Hydrothermal Treatment for the Formation of Hydroxyapatite (HAP)

[0071] This analysis was performed based on what was reported by (Hosseini, S., et al., 2014). In order to evaluate the osseointegration and bioactivity properties of the NiCuO.sub.xN.sub.y films deposited on AISI 316L steel, a coating sample was immersed in 40.00.1 mL of a solution containing 3.3 mM CaCl.sub.2 and 1.6 mM NaH.sub.2P0.sub.4 (equivalent concentrations). to human physiological concentrations of calcium and phosphorus) in a buffer Tris-HCl 0.1 M pH 7.4 in a thermostat at 37.00.1 C., without agitation for 120 hours. The pH of the solution remained constant throughout the time of analysis. After this time, the PAH crystals obtained were carefully washed with 96% v/v ethanol aqueous solution and allowed to dry at room temperature (20 C.). A sample of uncoated AISI 316L stainless steel was used as a blank. The crystals of PAH Ca.sub.10(P0.sub.4).sub.6(OH).sub.2 obtained were characterized by scanning electron microscopy (SEM), X-ray dispersive energy spectroscopy (EDX) and X-ray diffraction (XRD).

[0072] From the results it was found that nickel-copper binary oxynitride NiCuO.sub.xN.sub.y films favor osseointegration since, for example, in the product NiCuO.sub.xN.sub.y-1043390250 the PAH crystals formed covered about 39.4% of the total surface area of the film while the PAH formed on uncoated AISI 316L steel was only 3.8%.

[0073] FIG. 8a and FIG. 8b show the crystals of PAH formed by hydrothermal treatment under simulated physiological conditions on the surface of the product NiCuO.sub.xN.sub.y-1043390250 with magnification 100 (FIG. 8a) and 1000 (FIG. 8b), observed by scanning electron microscopy (MEB) It was found that the crystals of PAH present preferential growth in the crystalline planes (002) and (211) and the Ca/P ratio in them is around 1.73, value according to the Ca/P ratio found in the cortical bones (Ca/P 1.2 a 2) (Guzmn, R., et al., 2005).

5.5 Determination of Nickel Release Rate under Simulated Physiological Conditions

[0074] The procedure was performed according to international standards ASTM STP859 for analysis of in vitro degradation of orthopedic materials (Fraker, A. & Griffin, C, 1985). One sample of NiCuO.sub.xN.sub.y and another of stainless steel AISI 316L (control) were individually immersed in 150 mL0.2 mL of Hank's physiological solution at pH 7.22 for 8 days at 37 C. +/1 C. with constant agitation. Aliquots of 10.00.1 mL were taken every 0, 24, 96, 120, and 192 hours. The quantitative determination of nickel was carried out on a BAS CV50 voltammetric analyzer by the adsorptive cathodic redissolution voltammetry technique of the Ni-(DMG) 2 complex per square wave (VRCAdOC) on a bismuth film (working electrode) generated in situ on the surface of a vitrified carbon electrode (concentration of Bi3+ in the cell: 10 ppm, deposit parameters of bismuth film: 1.1 V for 60 seconds with constant agitation, accumulation of Ni (DMG) 20.8 V per 120 s, potential sweep: 0.8 to 1.3 V, frequency: 25 Hz, potential step: 0.005 V, pulse time: 0.04 s). An Ag/AgCl electrode saturated in 0.1 M KCI and a platinum electrode were used as reference electrode and electrode, respectively. A buffer of NH.sub.4Cl/0.1 M NH3 pH 9.0 was used as support electrolyte. Interferences by other ions present in the sample were eliminated by the addition of 100 L of 1.0 M sodium potassium tartrate solution in the voltammetric cell. The quantification method was standard addition with 100 L additions of standard Nickel 283.5 ppb to the electrochemical cell (range of known concentrations of Ni.sup.2+ between 2 and 20 ppb).

[0075] From this last analysis, it was found that on average 0.103 g of nickel/cm.sup.2/week of the product NiCuO.sub.xN.sub.y-1043390250 are released. This value is much lower than the maximum limit allowed by the European Nickel Directive (0.5 g/cm.sup.2/week) (Kovacevic, N., et al., 2012). It is also less than the maximum permissible limit in surgical grade steel AISI 316L (0.11 g/cm.sup.2/week). By way of example, FIGS. 9 and 10 show the voltammogram obtained for this product and the respective calibration curve used to quantify the nickel released during the test.

[0076] This indicates that NiCuO.sub.xN.sub.y films can be considered as a good option to avoid the release of large quantities of Ni.sup.2+ ions from stainless steel, thus favoring biocompatibility and avoiding health problems related to sensitivity to this metal.

[0077] An important aspect worth noting is that, although NiCuO.sub.xN.sub.y films have nickel in their structure, this metal remains stable under simulated physiological conditions in the form of oxynitride. This shows that the properties of nickel should not be considered only in terms of the properties of the pure material in the bulk state, but that the properties of the nickel-matrix set should be taken into account due to synergistic effects.

6. Determination of the Optical Properties of Thin NiCuO.SUB.x.N.SUB.y .Films Deposited on Glass

[0078] Thin films of nickel-copper binary oxynitride NiCuO.sub.xN.sub.y were deposited on the surface of glass substrates of dimensions 2.0 cm long by 1.0 cm wide, by the method of sputtering RF in reactive phase under conditions similar to those mentioned above, where variations were also made in the flow of nitrogen, composition of Ni:Cu in the target, temperature and power applied to the target.

[0079] For the determination of the optical properties of the NiCuO.sub.xN.sub.y films, the transmittance and reflectance spectra of the films were taken in a UV-vis-NIR Varian Cary 5000 spectrophotometer in the range 300-2500 nm of wavelength at temperature ambient. Based on the spectra obtained, the following optical properties of the NiCuO.sub.xN.sub.y films were calculated: absorption coefficient, extinction coefficient, refractive index, static refractive index, optical gap energy, Urbach energy, thickness of the films, optical conductivity and optical density.

[0080] FIG. 11 depicts a comparison between the transmittance spectra of the NiCuO.sub.xN.sub.y-457314200, NiCuO.sub.xN.sub.y-457314250 and NiCuO.sub.xN.sub.y-457314300 products deposited in thin film form on glass substrates by the method of RF reactive sputtering, obtained when a power of 200, 250 and 300 W, is applied to the blank respectively.

6.1 Determination of the Absorption Coefficient ()

[0081] The absorption coefficient () is one of the most important parameters in the study of the optical properties of a material and indicates the amount of photons that are absorbed by the material when a radiation of a certain wavelength strikes its surface (Huang, C, et al., 2002). From the recorded transmittance (T) and reflectance (R) values for each NiCuO.sub.xN.sub.y film, it is possible to determine the absorption coefficient () based on the expression reported by Shaban, M., et al. (2017).

[0082] FIG. 12 depicts the variation of the absorption coefficient of the products NiCuO.sub.xN.sub.y-457314200 (N4W200), NiCuO.sub.xN.sub.y-457314250 (N4W250) and NiCuO.sub.xN.sub.y-457314300 (N4W300) as a function of the wavelength (). The products were deposited in thin film form on glass substrates by the sputtering method in RF reactive phase, applying a target power of 200, 250 and 300 W, respectively.

6.2 Determination of the Extinction Coefficient (k)

[0083] The value of the extinction coefficient (k), which reflects the absorption of electromagnetic waves in the material due to the inelastic scattering phenomenon, it can be determined from the absorption coefficient () by means of the equation reported in Hassanien, A., et al. (2016).

6.3 Determination of Optical Band Gap (Eg)

[0084] The optical band gap (Eg) can be determined from the Tauc expression reported in Shaban, M., et al. (2017). In the expression, variables such as E.sub.photon correspond to the discrete energy of the photon (where E.sub.photon=hu, where h is the Planck constant and u the frequency of the incident radiation). B is a constant independent of temperature but dependent on the refractive index o. Finally, n is the transition mode factor that depends on the nature of the material and defines the type of transition that takes place from the valence layer to the conduction layer (Hassanien, A., 2015). From the graph of (hu)n as a function of hu, the value of the factor n can be identified by means of the slope of the curve with the highest linear dependence between (hu)n versus hu and the value of Eg by linear extrapolation of the previous curve on the x axis when (hu) n=0. For the NiCuO.sub.xN.sub.y, a transition mode factor value n= was determined, since with this value the highest degree of linearity is obtained. This indicates that the transition in NiCuO.sub.xN.sub.y is direct allowed.

[0085] FIG. 13 depicts the variation of the factor (hu)2 against the energy of the incident photon (hu). The highest degree of linearity was obtained for the optical transition mode factor n= indicating that a direct transition allowed in the NiCuO.sub.xN.sub.y material takes place. The determination of the optical band gap (Eg) is shown for the products NiCuO.sub.xN.sub.y-457314200 (N4W200), NiCuO.sub.xN.sub.y-457314250 (N4W250) and NiCuO.sub.xN.sub.y-457314300 (N4W300) deposited in thin film form on glass substrates by the method of cathode sputtering in RF reactive phase, obtained by applying a power to the target of 200, 250 and 300 W, respectively.

6.4 Determination of Urbach Energy (Eu)

[0086] The Urbach energy (Eu) refers to the width of the exponential absorption border (tail). The Eu values can be found from the slope of the curve in the graph of ln() vs hu. Eu is attributed to a disorder in the material that directs the tail in the valence and conduction bands (Shaban, M., et al., 2017).

6.5 Determination of the Refractive Index ().

[0087] The refractive index () is an important parameter to be taken into account for applications in communication and optical devices (Li, T., et al., 2014). This parameter can be calculated from the method of Swanepoel, R., (1983) based on the interference fringes observed in the transmittance spectrum.

6.6 Determination of the Thickness of NiCuO.SUB.x.N.SUB.y .Films

[0088] The thickness of thin films of NiCuOxNy can be determined by the method of Swanepoel, R., (1983), taking the values of , and n for two consecutive ends by means of an iterative process.

6.7 Calculation of the Static Refractive Index

[0089] The static refractive index (o) can be determined from the Wemple-DiDomenico model based on the approximation of the simple harmonic oscillator, in which the dispersion of the refractive index () is described (Hassanien, A., et al., 2016). The model is based on the energy of the simple harmonic oscillator (Eo) and the scattering energy (Ed). By plotting the refractive index factor (n21)1 as a function of the square of the energy of the photon (hu) 2, the parameters of the oscillator can be found. The graph is a straight line where the intercept with the y-axis corresponds to the value of (Eo/Ed) and the slope is equal to the reciprocal of the term (Ed/Eo).

[0090] Based on the values of Eo and Ed, the dielectric constant at zero frequency () and the static refractive index (o) can be calculated when (hu) 2=0 in the Wemple-DiDomenico equation reported on Hassanien, A. & Akl, A. (2015).

6.8 Determination of the Optical Conductivity ()

[0091] The optical conductivity () of thin semiconductor films depends on the energy of the optical band gap (Eg), absorption coefficient (), refractive index (), extinction coefficient (k) and the frequency of incident photons (Hassanien, A. & Akl, A., 2015).

6.9 Determination of the Optical Density (Dopt)

[0092] The optical density (D.sub.opt) or absorbance is proportional to the thickness of the film (d) and the absorption coefficient of the material () (Hassanien, A. & Akl, A., 2015). As an example, Table III shows the optical constants obtained for the product NiCuO.sub.xN.sub.y-457314200 (N4W200) deposited as a thin film on the surface of a glass substrate by the sputtering technique in RF reactive phase.

TABLE-US-00003 TABLE III Optical constants determined by the method of Swanepoel, R., 1983, for the product NiCuO.sub.xN.sub.y-4.sub.57314.sub.200 (N4W200). d average = 1620 m, deviation = 0.075 m. (nm) T.sub.M T.sub.m n +/0.004 d (m) +/0.5 m (cm.sup.1) k 10.sup.5 (s.sup.1) 10.sup.14 D.sub.opt 2495 0.472 0.422 2.073 1620 4.744 9.42 2.493 0.157 2231 0.453 0.408 2.067 1620 5.782 10.3 2.779 0.191 1890 0.421 0.385 2.023 1620 5.812 8.74 3.211 0.192 1182 0.324 0.323 1.548 1620 7.374 6.93 3.929 0.244 1104 0.311 0.315 1.278 1620 7.674 6.74 3.473 0.254

[0093] Table IV shows a comparison between some of the optical constants obtained for the products NiCuO.sub.xN.sub.y-4.sub.57314.sub.200 (N4W200), NiCuO.sub.xN.sub.y-4.sub.5734.sub.250 (N4W250) and NiCuO.sub.xN.sub.y-4.sub.57314.sub.300 (N4W300) deposited in the form of a thin film on glass substrates by the spraying method cathode in RF reactive phase, obtained by applying a target power of 200, 250 and 300 W, respectively.

TABLE-US-00004 TABLE IV Comparison between some of the optical properties determined for the products NiCuO.sub.xN.sub.y-4.sub.57314.sub.200 (N4W200), NiCuO.sub.xN.sub.y-4.sub.57314.sub.250 (N4W250) and NiCuO.sub.xN.sub.y-4.sub.57314.sub.300 (N4W300). Optical Urbach Thickness band Energy, Static of the energy, Eu refraction film, Material Code Eg (eV) (eV) index, n.sub.0 d (m) +/12 m NiCuO.sub.xN.sub.y-4.sub.57314.sub.200 1.100 0.77 2.186 331 NiCuO.sub.xN.sub.y-4.sub.57314.sub.250 0.923 1.89 1.993 481 NiCuO.sub.xN.sub.y-4.sub.57314.sub.300 1.376 2.74 2.304 1620

[0094] In general, it was observed that depending on the deposition conditions, some films NiCuO.sub.xN.sub.y are highly absorptive in the region of the UV-vis spectrum (between 300 and 800 nm wavelength), while the NIR spectrum region presents low absorption and high transmittance values. This material could have application in optical devices such as infrared transmission windows (Tsilingiris, P., 2003) and as blocking filters of wavelengths between 200 and 750 nm also called high frequency pass filters (Rane, S. & Puri, V., 2002). On the other hand, some films of NiCuO.sub.xN.sub.y (as for example the product NiCuO.sub.xN.sub.y-10.sub.32372.sub.350) absorb in all the range of wavelengths of the UV-vis-NIR spectrum, therefore not they present transmittance.

[0095] In addition, it was observed that films NiCuO.sub.xN.sub.y have an optical band gap present between 0.9 and 0.4 eV and refractive index values between 1.8 and 2.4, and therefore have semiconducting characteristics making them potential materials in photovoltaic applications.

DESCRIPTION OF SOME FORM OF CARRYING OUT THE INVENTION

[0096] In order to make the present invention more understandable, some specific examples that show how to carry out the invention are mentioned below:

EXAMPLE 1

[0097] The product described here is called NiCuO.sub.xN.sub.y-18.sub.433 72.sub.2 5o. It is produced by the technique of sputtering RF in reactive phase on the surface of stainless steel AISI 316L, from a nickel-copper target whose composition is 72% Ni:28% Cu, base pressure 3.410.sup.3 Pa, working pressure 7.410.sup.1 Pa, argon flow 20.0 sccm, oxygen flow 2.00 sccm, nitrogen flow 18.0 sccm, temperature 433K, 250 W blank power, distance blank-substrate 5.0 cm and storage time 60 minutes. The product obtained presents black and/or gray coloration, and presents high biocompatibility.

EXAMPLE 2

[0098] The product described here is called NiCuO.sub.xN.sub.y-10.sub.573 90.sub.2 5oIt is produced by the technique of sputtering RF in reactive phase on the surface of stainless steel AISI 316L, from a nickel-copper target whose composition is 90% Ni:10% Cu, base pressure 3.410.sup.3 Pa, working pressure 7.410.sup.1 Pa, argon flow 20.0 sccm, oxygen flow 2.00 sccm, nitrogen flow 10.0 sccm, temperature 573K, 250 W blank power, distance blank-substrate 5.0 cm and storage time 60 minutes. The product obtained shows brown coloration and presents moderate biocompatibility.

EXAMPLE 3

[0099] The product described here is called NiCuO.sub.xN.sub.y-10.sub.433 72.sub.2 5o. It is produced by the technique of sputtering RF in reactive phase on the surface of stainless steel AISI 316L, from a nickel-copper target whose composition is 72% Ni:28% Cu, base pressure 3.410.sup.3 Pa, working pressure 7.410.sup.1 Pa, argon flow 20.0 sccm, oxygen flow 2.00 sccm, nitrogen flow 10.0 sccm, temperature 433K, target power 250 W, distance blank-substrate 5.0 cm and storage time 60 minutes. The product obtained shows blue and/or brown coloration and has excellent properties as a biocompatible material.

EXAMPLE 4

[0100] The product described here is called NiCuO.sub.xN.sub.y-4.sub.5 7.sub.3 14.sub.2 5o. It is produced by the technique of sputtering RF in reactive phase on the surface of a glass substrate, from a nickel-copper target whose composition is 14% Ni:86% Cu, base pressure 3.410.sup.3 Pa, Working pressure 7.410.sup.1 Pa, argon flow 20.0 sccm, oxygen flow 2.00 sccm, nitrogen flow 4.0 sccm, temperature 573K, power of blank 250 W, distance blank-substrate 5.0 cm and storage time 60 minutes. The product obtained is a thin semiconductor optical film with band gap energy of 0.923 eV, Urbach energy 1.89 eV, static refractive index 1.99, highly absorbent in the UV-vis region and having high transmittance values in the NIR region of the electromagnetic spectrum.

EXAMPLE 5

[0101] The product described here is called NiCuO.sub.xN.sub.y-457.sub.3 14.sub.3 ooIt is produced by the RF sputtering technique in reactive phase on the surface of a glass substrate, from a nickel-copper target whose composition is 14% Ni:86% Cu, base pressure 3.410.sup.3 Pa, working pressure 7.410.sup.1 Pa, argon flow 20.0 sccm, oxygen flow 2.00 sccm, nitrogen flow 4.0 sccm, temperature 573K, blank power 300 W, distance blank-substrate 5.0 cm and storage time 60 minutes. The product obtained is a thin semiconductor optical film with band gap energy of 1.376 eV, Urbach energy 2.74 eV, static refractive index 3.304, highly absorbent in the UV-vis region and having high transmittance values in the NIR region of the electromagnetic spectrum.

PATENT REFERENCES

[0102] U.S. Pat. No. 7,776,701 B2

[0103] US2010183766A1

[0104] U.S. Pat. No. 6,878,666 B2

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[0108] US20080251121A1

[0109] U.S. Pat. No. 6,291,866 B1

[0110] US20090233424A1

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[0189] All patents, patent applications and publications cited in this application including all cited references in those patents, applications and publications, are hereby incorporated by reference in their entirety for all purposes to the same extent as if each individual patent, patent application or publication were so individually denoted.

[0190] While the many embodiments of the invention have been disclosed above and include presently preferred embodiments, many other embodiments and variations are possible within the scope of the present disclosure and in the appended claims that follow. Accordingly, the details of the preferred embodiments and examples provided are not to be construed as limiting. It is to be understood that the terms used herein are merely descriptive rather than limiting and that various changes, numerous equivalents may be made without departing from the spirit or scope of the claimed invention.