SURFACE PLASMON INFRARED NANO PULSE LASER HAVING MULTI-RESONANCE COMPETITION MECHANISM
20200395735 ยท 2020-12-17
Assignee
Inventors
- Tong Zhang (Jiangsu, CN)
- Feng Shan (Jiangsu, CN)
- Xiaoyang Zhang (Jiangsu, CN)
- Xiaoyi Pang (Jiangsu, CN)
Cpc classification
H01S3/08
ELECTRICITY
H01S5/04257
ELECTRICITY
H01S5/1042
ELECTRICITY
H01S3/169
ELECTRICITY
H01S5/1046
ELECTRICITY
International classification
H01S5/10
ELECTRICITY
H01S3/11
ELECTRICITY
Abstract
A surface plasmon infrared nano-pulse laser having a multi-resonance competition mechanism, consisting of the four parts of a surface plasmon nano-pin resonance chamber (1), a spacer layer (2), a gain medium (3), and a two-dimensional material layer (4). The surface plasmon nano-pin resonance chamber (1) consists of a metal nano rod (11) and one or more nano sheets (12) grown thereon, the surface plasmon nano-pin resonance chamber (1) and the gain medium (3) being isolated by the isolating layer (2), and the two-dimensional material layer (4) covering a surface of the surface plasmon nano-pulse laser; positive and negative electrodes (5) are located at two ends of the surface plasmon nano-pulse laser, and a layer of a two-dimensional material having a feature of saturatable absorption is introduced to a surface of the nano-pin resonance chamber.
Claims
1. A surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism, comprising four parts of a surface plasmon nano-pin resonance chamber with a multi-resonance mechanism competition effect, a spacer layer, a gain medium, and a two-dimensional material layer; wherein the surface plasmon nano-pin resonance chamber comprising a metal nano rod and one or more nano sheets grown thereon, the surface plasmon nano-pin resonance chamber and the gain medium being isolated by the spacer layer, the two-dimensional material layer covering a surface of the surface plasmon infrared nano pulse laser; a positive electrode and a negative electrode located at two ends of the surface plasmon infrared nano pulse laser.
2. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 1, wherein, materials of the metal nano rod and the nano sheets are both metal materials with a surface plasmonic characteristic, the metal nano rod has a length ranging from 20 nm to 30 microns, a diameter ranging from 10 nm to 200 nm; the nano sheets having a SPR effect is a nanoparticle with one or more anisotropic morphologies.
3. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 2, wherein the metal materials with the surface plasmonic characteristic is: gold, silver, copper, or aluminum; a material of the metal nano rod and a material of the nano sheets are the same or different.
4. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 2, wherein a shape of the nanoparticle with the anisotropic morphology is a triangular plate, a tetrahedron, a hexagonal plate, or a decahedron.
5. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 1, wherein the gain medium is a medium material with a gain amplification characteristic.
6. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 5, wherein the medium material with the gain amplification characteristic is a quantum dot, an organic dye, or a rare earth luminescent material.
7. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 1, wherein the spacer layer is an oxide or a fluoride inorganic material.
8. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 7, wherein the oxide or the fluoride inorganic material is SiO.sub.2, Al.sub.2O.sub.3, or MgF.
9. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 1, wherein the two-dimensional material layer is a two-dimensional material having a property of saturable absorption.
10. The surface plasmon infrared nano pulse laser having the multi-resonance competition mechanism according to claim 1, wherein a material of the positive electrode and the negative electrode is Pd or Ti.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0026]
[0027] In the figure, there are a surface plasmon nano-pin resonance chamber 1, a spacer layer 2, a gain medium 3, a two-dimensional material layer 4, an electrode 5, a wire 6, and incident light 7.
[0028]
[0029]
[0030]
[0031]
[0032]
[0033]
[0034]
DESCRIPTION OF THE EMBODIMENTS
[0035] The present invention is further described below with reference to the accompanying drawing and specific implementations.
[0036] According to the present invention, an experimenter can prepare a tunable surface plasmonic infrared nanolaser based on a multi-resonance competition mechanism. Increasing an aspect ratio of a nanorod in the nano-pin resonance chamber can red-shift a resonance peak within a large range, and the resonance peak can be red-shifted even from a visible band to an infrared region. A position of the surface plasmonic resonance peak can be controlled by changing parameters, such as a size, a quantity, a position, and a direction, of the nano sheets in the nano-pin resonance chamber, to make the position match the resonance peak of the nanorod to further form a multi-resonance competition mode, thereby achieving a resonance peak with an ultra-high Q value at a specific wavelength, so that a threshold of the pulse nanolaser can be lowered. When an emission wavelength of the gain medium is consistent with a resonance peak of the nano-pin resonance chamber, laser with the strongest energy is obtained. A nanolaser with wide band emission, particularly, in an infrared band, can be implemented by selecting a gain medium with an emission wavelength matching a resonance peak. Utilizing a characteristic that the resonance peak of the surface plasmon nano-pin resonance chamber can be adjusted in a wide band in a visible-infrared range, an emission wavelength of the nanolaser can be broadened to the infrared region, thereby realizing an infrared nanolaser. In addition, a layer of a two-dimensional material having a property of saturable absorption is introduced to a surface of nano-pin resonance chamber, which may achieve mode locking and Q switching of the surface plasmon infrared nano pulse laser, and increase the laser pulse time of the nanolaser to the femto second-attosecond level.
[0037] Wherein:
[0038] The surface plasmonic pulse nanolaser includes four parts of a surface plasmon nano-pin resonance chamber 1 with a multi-resonance mechanism competition effect, a spacer layer 2, a gain medium 3, and a two-dimensional material layer 4, where the surface plasmon nano-pin resonance chamber 1 consists of a metal nanorod 11 and one or more nano sheets 12 grown thereon, the surface plasmon nano-pin resonance chamber 1 and the gain medium 3 being isolated by the spacer layer 2, and the two-dimensional material layer 4 covering a surface of the surface plasmonic pulse nanolaser; and positive and negative electrodes 5 are located at two ends of the surface plasmonic pulse nanolaser.
[0039] In a working state of the pulse nanolaser, incident light 7 is vertically irradiated on the nano-pin resonance chamber 1, surface plasmons are excited by amplifying free electron oscillations in metal on a surface of the nano-pin resonance chamber, and the surface plasmons are continuously amplified by the gain medium on the surface of the nano-pin resonance chamber, to finally generate laser. Increasing an aspect ratio of a nanorod 11 in the nano-pin resonance chamber 1 can red-shift a resonance peak within a large range, and the resonance peak can be red-shifted even from a visible band to an infrared region. A position of the surface plasmonic resonance peak can be controlled by changing parameters, such as a size, a quantity, a position, and a direction, of the nano sheets 12 in the nano-pin resonance chamber 1, to make the position match the resonance peak of the nanorod 2 to further form a multi-resonance competition mode, thereby achieving a resonance peak with an ultra-high Q value at a specific wavelength, so that a threshold of the pulse nanolaser can be lowered. When an emission wavelength of the gain medium is consistent with a resonance peak of the nano-pin resonance chamber 1, laser with the strongest energy is obtained. A nanolaser with wide band emission, particularly, in an infrared band, can be implemented by selecting a gain medium with an emission wavelength matching a resonance peak.
[0040] A method for implementing active Q-switched nanosecond pulse laser: Electronic state density of the two-dimensional material layer 4 is changed by applying a periodically varying voltage to an external circuit 6 on the electrode 5. When an external voltage is applied, the electronic state density of the two-dimensional material layer gradually increases. When the electronic state density in the two-dimensional material layer reaches saturation, releasing is performed instantaneously, and the Q value of the nano-pin resonance chamber 1 rapidly increases, thereby instantaneously outputting laser pulse. In this case, the density of inverted population in the nano-pin resonance chamber 1 reduces sharply. The foregoing process is repeated to form a sequence of laser pulses.
[0041] A method for implementing passive Q-switched nanosecond pulse laser: By utilizing the inherent property of saturable absorption of the two-dimensional material, when incident light is relatively weak, the two-dimensional material layer is completely absorbed, causing that loss of a nano-pin resonance chamber 1 increases, and the laser is in a low Q state; when the incident light becomes strong enough due to an increased the density of inverted population, the two-dimensional material layer is almost transparent to the incident light, loss of the nano-pin resonance chamber 1 is sharply reduced, the nanolaser is in a high Q state, and stored energy is released in a very short time, thereby outputting high-energy Q-switched pulse laser.
[0042] A method for implementing mode-locked ultrafast femto second-attosecond pulse laser: When a laser pulse passes through the two-dimensional material layer, loss of an edge part of the pulse is greater than that of a central part. As a result, the laser pulse is narrowed in a process of passing through the two-dimensional material layer, so that the mode-locked pulse with a stable frequency is self-started and repeated. Based on this method, a width of the laser pulse that can be obtained is on the femto second-attosecond level.
[0043] The surface plasmon nano-pin resonance chamber 1 consists of a metal nanorod and one or more nano sheet structures grown thereon. The material of the metal nanorod may be a metal material with a surface plasmonic characteristic such as gold, silver, copper, or aluminum. The metal nanorod has a length ranging from 20 nm to 30 microns and a diameter ranging from 10 nm to 200 nm. The nano sheet structures with a SPR effect may be a nanoparticle with one or more anisotropic morphologies such as a triangular plate, a tetrahedron, a hexagonal plate, or a decahedron, a material thereof may be a metal material with a surface plasmonic characteristic such as gold, silver, copper, or aluminum, and the material may be the same as or different from that of the nanorod.
[0044] In the surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism, the gain medium 3 may be a medium material with a gain amplification characteristic is a quantum dot, an organic dye, or a rare earth luminescent material.
[0045] In the surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism, the spacer layer 2 may be an oxide or fluoride inorganic material such as SiO.sub.2, Al.sub.2O.sub.3, or MgF.
[0046] In the surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism, the two-dimensional material layer 4 may be a two-dimensional material having a property of saturable absorption such as graphene.
[0047] In the surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism, the electrode 5 may be a material with relatively low resistance such as Pd and Ti.
[0048] In the surface plasmon infrared nano pulse laser having a multi-resonance competition mechanism, the surface plasmon nano-pin resonance chamber structure may be synthesized by using a chemical method, or may be achieved through various methods such as a top-down process.