DIODE LASER

Abstract

The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

Claims

1. A laser assembly (1), comprising at least one diode laser bar (2), at least one heat sink (4) having a first connection surface (6), and at least one cover (7) having a second connection surface (8), wherein the diode laser bar comprises one or a plurality of emitters (9), at least one P-type contact (11) and at least one N-type contact (12), and the P-type contact comprises a first metal layer (13) and the N-type contact comprises a second metal layer (14), and the heat sink (4) is electrically and thermally connected to the P-type contact (11) at the first connection surface (6) and the N-type contact (12) is electrically connected to the cover (7) at the second connection surface (8), and the first and/or the second connection surface (6,8) are/is covered with nanowires or nanotubes (16,17).

2. The laser assembly (1) as claimed in claim 1, characterized in that the cover (7) is joined together with the heat sink (4) by way of an electrically insulating layer (15).

3. The laser assembly (1) as claimed in claim 1, characterized in that the first metal layer (13) has a thickness of 1 m to 10 m.

4. The laser assembly (1) as claimed in claim 1, characterized in that the second metal layer (14) has a thickness of less than 500 nm.

5. The laser assembly (1) as claimed in claim 1, characterized in that the nanowires (16) consist of a metal and/or the nanotubes consist of carbon.

6. The laser assembly (1) as claimed in claim 1, characterized in that the nanowires and/or the nanotubes (16, 17) are oriented in a preferred direction perpendicular to the first and/or second connection surface (6, 8), respectively.

7. The laser assembly (1) as claimed in claim 1, characterized in that the first connection surface (6) is covered with nanotubes and/or nanowires (16) and the first metal layer (13) has a thickness of 1 m to 10 m and the nanotubes and/or nanowires (16) have a greater hardness than the first metal layer (13) and are at least partly stuck into the latter.

8. The laser assembly (1) as claimed in claim 1, characterized in that the second connection surface (8) is covered with nanotubes and/or nanowires (16, 17) and the nanotubes and/or nanowires (16, 17) have a greater hardness than the second metal layer (14) and are at least partly stuck into the latter.

9. The laser assembly (1) as claimed in claim 1, characterized in that the second connection surface (8) is covered with nanotubes and/or nanowires (16) and the nanotubes and/or nanowires (16) are elastically or plastically deformed.

10. The laser assembly (1) as claimed in claim 1, characterized in that the second connection surface (8) is covered with nanotubes and/or nanowires (16) and the second metal layer has a thickness of less than 500 nm.

11. The laser assembly (1) as claimed in claim 1, characterized in that the nanotubes and/or nanowires (16) have an external diameter of less than 1 m and have a length of more than 2 m.

12. The laser assembly (1) as claimed in claim 1, characterized in that the first metal layer (13) is covered with nanotubes and/or nanowires (16, 18) on the outer side.

13. The laser assembly (1) as claimed in claim 1, characterized in that the nanowires (16) consist of gold, silver, nickel, chromium or copper.

14. The laser assembly (1) as claimed in claim 1, characterized in that the first connection surface (6) is covered with first nanotubes or nanowires (16) and the first metal layer (13) is covered with third nanotubes or nanowires (18).

15. The laser assembly (1) as claimed in claim 1, characterized in that the third nanotubes or nanowires (18), respectively, consist of a different material than the first nanotubes or nanowires (16).

16. A laser assembly (1), comprising a carrier (23), at least one diode laser bar (2), at least one heat sink (4) having a first connection surface (6), and at least one cover (7) having a second connection surface (8), wherein the diode laser bar comprises one or a plurality of emitters (9), at least one P-type contact (11) and at least one N-type contact (12), and the P-type contact comprises a first metal layer (13) and the N-type contact comprises a second metal layer (14), and the heat sink (4) is electrically and thermally connected to the P-type contact (11) at the first connection surface (6) and the N-type contact (12) is electrically connected to the cover (7) at the second connection surface (8), and the first and/or the second connection surface (6, 8) are/is covered with nanowires or nanotubes (16, 17), and the heat sink (4) comprises a third connection surface, which is covered with fourth nanowires (19), and the carrier (23) is covered with fifth nanowires (20) and the fourth nanowires (19) engage into the fifth nanowires (20) and the heat sink (4) is connected to the carrier (23) by means of this engagement.

17. The laser assembly (1) as claimed in claim 16, characterized in that the cover (7) comprises a fourth connection surface, which is covered with sixth nanowires (21), and the carrier is covered with seventh nanowires (22), wherein the seventh nanowires (22) on the carrier are electrically insulated from the fifth nanowires (20), and the sixth nanowires (21) engage into the seventh nanowires (22) and the cover (7) is connected to the carrier (23) by means of this engagement.

18. The laser assembly (1) as claimed in claim 1, characterized in that the third and fourth connection surfaces are provided perpendicular to the first connection surface (6).

19. A method for producing a laser assembly (1), comprising providing at least one diode laser bar (2), at least one heat sink (4) having a first connection surface (6), and at least one cover (7) having a second connection surface (8), wherein the diode laser bar comprises one or a plurality of emitters (9), at least one P-type contact (11) and at least one N-type contact (12) and the P-type contact (11) comprises a first metal layer (13) and the N-type contact comprises a second metal layer (14), covering the first and/or the second connection surface with nanowires or nanotubes (16, 17), producing an electrical and thermal connection of the P-type contact (11) to the heat sink (4) at the first connection surface (6), producing an electrical connection of the N-type contact (12) to the cover (7) at the second connection surface (8).

20. A method for producing a laser assembly (1), comprising providing a carrier (23), providing at least one diode laser bar (2), at least one heat sink (4) having a first connection surface (6), and a third connection surface and at least one cover (7) having a second connection surface (8), wherein the diode laser bar comprises one or a plurality of emitters (9), at least one P-type contact (11) and at least one N-type contact (12) and the P-type contact comprises a first metal layer (13) and the N-type contact comprises a second metal layer (14), covering the first and/or the second connection surface with nanowires or nanotubes (16, 17), covering the third connection surface with fourth nanowires or nanotubes (19), covering the carrier with fifth nanowires or nanotubes (20), producing an electrical and thermal connection of the P-type contact to the heat sink at the first connection surface and an electrical connection of the N-type contact to the cover at the second connection surface by means of a y-force (26), producing an electrical and thermal connection of the P-type contact to the heat sink at the first connection surface and an electrical connection of the N-type contact to the cover at the second connection surface by means of the y-force (26), connecting the heat sink to the carrier by pressing the fourth nanowires onto the fifth nanowires by means of a z-force (27).

Description

[0069] The figures show the following:

[0070] FIG. 1 shows a first exemplary embodiment in front view.

[0071] FIG. 2 shows the first exemplary embodiment in side view.

[0072] FIG. 3 shows a second exemplary embodiment.

[0073] FIG. 4 shows the second exemplary embodiment in side view.

[0074] FIG. 5 shows a third exemplary embodiment.

[0075] FIG. 6 shows the third exemplary embodiment in side view.

[0076] FIG. 7 shows a fourth exemplary embodiment.

[0077] FIG. 8 shows the fourth exemplary embodiment in side view.

[0078] FIG. 9 shows a fifth exemplary embodiment in side view.

[0079] FIG. 10 shows a sixth exemplary embodiment.

[0080] FIG. 11 shows the production of the sixth exemplary embodiment.

[0081] FIG. 12 shows a seventh exemplary embodiment.

EXEMPLARY EMBODIMENTS

[0082] The invention is explained below on the basis of exemplary embodiments.

[0083] FIG. 1 shows a first exemplary embodiment in front view. The laser assembly 1 of the first exemplary embodiment comprises a diode laser bar 2, a heat sink 4 having a first connection surface 6, and a cover 7 having a second connection surface 8, wherein the diode laser bar comprises a plurality of emitters 9, a P-type contact 11 and an N-type contact 12 and the P-type contact comprises a first metal layer 13, which is thicker than the second metal layer 14, and the N-type contact comprises a second metal layer 14,

and the heat sink 4 is electrically and thermally connected to the P-type contact 11 at the first connection surface 6 and the N-type contact 12 is electrically connected to the cover 7 at the second connection surface 8,
and the second connection surface 8 is covered with nanowires or nanotubes 16.

[0084] The cover 7 is joined together with the heat sink 4 by way of an electrically insulating layer 15. In this case, the waste heat of the laser bar 2 can be dissipated via the first and second connection surfaces 6, 8. From the cover 7, waste heat can be conducted to the heat sink 4 via the electrically insulating layer 15. The N-type contact 12 is additionally also thermally connected to the cover 7 at the second connection surface 8.

[0085] The electrically insulating layer 15 is an adhesive layer, advantageously a thermally conductive adhesive, by which the cover is secured to the heat sink.

[0086] The first metal layer 13 has a thickness of 1 m to 10 m. By way of example, the first metal layer can be embodied as or comprise a thick gold layer. The first metal layer can comprise a layer produced electrolytically, for example. The first metal layer can serve for heat spreading. In a modification of the exemplary embodiment, the first metal layer can be made thinner.

[0087] The second metal layer has a thickness of less than 500 nm. Such a layer can be produced by sputtering, for example. A thin gold layer is involved.

[0088] FIG. 2 shows the first exemplary embodiment in side view.

[0089] FIG. 3 shows a second exemplary embodiment.

[0090] FIG. 5 shows a third exemplary embodiment. Here, in contrast to the second exemplary embodiment, second nanowires and/or nanotubes 17 are additionally provided on the second connection surface. FIG. 6 shows the third exemplary embodiment in side view.

[0091] FIG. 7 shows a fourth exemplary embodiment.

[0092] FIG. 9 shows a fifth exemplary embodiment in side view. 500 nm.

[0093] One exemplary embodimentnot illustrated pictoriallyof the method for producing a laser assembly 1 comprises: [0094] providing at least one diode laser bar 2, at least one heat sink 4 having a first connection surface 6, and at least one cover 7 having a second connection surface 8, wherein the diode laser bar comprises one or a plurality of emitters 9, at least one P-type contact 11 and at least one N-type contact 12 and the P-type contact comprises a first metal layer 13 and the N-type contact comprises a second metal layer 14, [0095] covering the first and/or the second connection surface with nanowires or nanotubes 16, [0096] producing an electrical and thermal connection of the P-type contact to the heat sink at the first connection surface, [0097] producing an electrical connection of the N-type contact to the cover at the second connection surface.

[0098] Production can include curing a joining medium, which thereafter forms an electrically insulating layer 15 connecting the cover to the heat sink. A clamping force can be generated as a result, which clamping force keeps the laser bar clamped between the first and second connection surfaces. Advantageously, by means of this clamping force, the nanowires and/or nanotubes can also stick into the first and/or second metal layer. Although the method is not illustrated pictorially, the reference signs can be gathered from the figures, FIG. 1 to FIG. 9, which show exemplary embodiments of the laser assembly.

[0099] FIG. 10 shows a sixth exemplary embodiment. 4, 5 having a first connection surface 6, and at least one cover 7 having a second connection surface 8. The diode laser bars comprise one or a plurality of emitters 9 (not illustrated here, analogous to the illustration in FIG. 1), at least one P-type contact 11 and at least one N-type contact 12. The P-type contact comprises a first metal layer 13 and the N-type contact comprises a second metal layer 14. The heat sink is electrically and thermally connected to the P-type contact at the first connection surface and the N-type contact is electrically connected to the cover at the second connection surface. The first and/or the second connection surface are/is covered with nanowires or nanotubes 16. The heat sink comprises a third connection surface covered with fourth nanowires 19. The carrier is covered with fifth nanowires 20. The fourth nanowires engage into the fifth nanowires and the heat sink is connected to the carrier as a result of this engagement.

[0100] The cover 7 of the first laser bar here is simultaneously the second heat sink 5 of the second laser bar 3.

[0101] The fourth and fifth nanowires form a hook and loop fastener that ensures a permanent connection of the heat sink to the carrier.

[0102] Advantageously, the cover can comprise a fourth connection surface, which is covered with sixth nanowires 21, and the carrier is covered with seventh nanowires 22, wherein the seventh nanowires on the carrier are electrically insulated from the fifth nanowires, and the sixth nanowires engage into the seventh nanowires and the cover is connected to the carrier by means of this engagement.

[0103] The carrier 23 comprises a ceramic embodied in a plate-shaped fashion, for example. A first metallic layer region 24 and a second metallic layer region 25 are present on said ceramic, which layer regions are electrically insulated from one another. The fifth nanowires are applied on the first layer region and the seventh nanowires are applied on the second layer region. The electrical insulation is produced as a result.

[0104] The cover is simultaneously provided for heat conduction. The cover 7 is simultaneously provided as a second heat sink 5 for a second laser bar 3. The same applies to further laser bars. In this way, a plurality of laser bars are stacked parallel one above another in the y-direction with respectively intervening heat sinks.

[0105] The third and fourth connection surfaces are provided perpendicular to the first connection surface. They lie in an xy-plane.

[0106] The fourth and fifth and, if provided, the sixth and seventh nanowires can advantageously consist of gold. The cold welding effect can be particularly pronounced in that case. In modifications of the exemplary embodiment, said nanowires are produced from other metals.

[0107] A further method according to FIG. 11 for producing a laser assembly 1 of the sixth exemplary embodiment and analogously of the seventh exemplary embodiment comprises [0108] providing a carrier 23, [0109] providing at least one diode laser bar 2, at least one heat sink 4 having a first connection surface 6, and a third connection surface and at least one cover 7 having a second connection surface 8, wherein the diode laser bar comprises one or a plurality of emitters 9, at least one P-type contact 11 and at least one N-type contact 12 and the P-type contact comprises a first metal layer 13 and the N-type contact comprises a second metal layer 14, [0110] covering the first and/or the second connection surface with nanowires or nanotubes 16, 17, [0111] covering the third connection surface with fourth nanowires or nanotubes 19, [0112] covering the carrier with fifth nanowires or nanotubes 20, [0113] producing an electrical and thermal connection of the P-type contact to the heat sink at the first connection surface and an electrical connection of the N-type contact to the cover at the second connection surface by means of a y-force 26, [0114] producing an electrical and thermal connection of the P-type contact to the heat sink at the first connection surface and an electrical connection of the N-type contact to the cover at the second connection surface by means of the y-force 26, [0115] connecting the heat sink to the carrier by pressing the fourth nanowires onto the fifth nanowires by means of a z-force 27.

[0116] The laser bar(s) and the heat sink or heat sinks and cover(s) form a stack, which has a stacking direction y. The y-force is a clamping force that holds the stack together. The y-force is an external force that holds the stack together substantially in a force-locking manner. It acts in the y-direction. In a modification of the exemplary embodiment, by means of deformation of the nanotubes and/or nanowires and/or penetration into the metal layers, a positively locking or cohesive engagement is achieved which enables the stack to be held together even after the clamping force has been turned off.

[0117] The z-force is an external force that presses the stack onto the carrier. It acts in the z direction. It can act on the heat sinks and/or the covers in such a way that they are pressed against the carrier with a uniform pressure. The mechanical loading of the laser bars is minimized as a result. By means of the z-force, the fourth nanowires are pressed together with the fifth nanowires, such that they produce a permanent connection which is maintained even when the z-force is turned off after pressing. This connection can function in a manner similar to a hook and loop fastener, wherein the nanowires can be plastically deformed during pressing. At the same time, the sixth nanowires can be pressed together with the seventh nanowires in the same way. These connections of the heat sink and of the cover to the carrier maintain the clamping force in the stack, with the result that the y-force can also be turned off after pressing.

[0118] The composite in the stack is somewhat compliant owing to the first nanowires and/or nanotubes. An excessively high shear stress on the laser bars during pressing and/or thereafter during operation of the laser can be avoided as a result.

[0119] FIG. 12 shows a seventh exemplary embodiment.

[0120] As a precaution it should be pointed out that the figures are not depicted to scale.

REFERENCE SIGNS

[0121] 1. Laser assembly [0122] 2. Diode laser bar; first diode laser bar [0123] 3. Second diode laser bar [0124] 4. Heat sink; first heat sink [0125] 5. Second heat sink [0126] 6. First connection surface [0127] 7. Cover [0128] 8. Second connection surface [0129] 9. Emitter [0130] 10. Laser radiation [0131] 11. P-type contact [0132] 12. N-type contact [0133] 13. First metal layer [0134] 14. Second metal layer [0135] 15. Electrically insulating layer [0136] 16. Nanowires; nanotubes [0137] 17. Second nanowires; second nanotubes [0138] 18. Third nanowires; third nanotubes [0139] 19. Fourth nanowires [0140] 20. Fifth nanowires [0141] 21. Sixth nanowires [0142] 22. Seventh nanowires [0143] 23. Carrier [0144] 24. First layer region [0145] 25. Second layer region [0146] 26. y-force [0147] 27. z-force