Wafer level shim processing

Abstract

Methods and apparatus for proving a sensor assembly. Embodiments can include employing a circuit assembly having a first layer bonded to a second layer with an oxide layer, depositing bonding oxide on the second layer of the circuit assembly, and thinning the first layer of the circuit assembly after depositing the bonding oxide. A coating can be applied over at least a portion of the first layer of the circuit assembly after annealing the circuit assembly. After polishing the bonding oxide on the second surface of the second layer of the circuit assembly, a shim can be secured to the bonding oxide on the second surface of the second layer of the circuit assembly to reduce bow of the assembly. Embodiments can provide a sensor useful in focal plane arrays.

Claims

1. A method, comprising: deploying a circuit assembly having a first wafer bonded to a second wafer with an oxide layer, wherein a first surface of the first wafer is bonded to a first surface of the second wafer; creating a bonding oxide on a second surface of the second wafer; thinning the first wafer after depositing the bonding oxide; annealing the circuit assembly; applying a coating over at least a portion of the first wafer after annealing the circuit assembly; polishing the bonding oxide on the second surface of the second wafer; securing a shim to the bonding oxide on the second surface of the second wafer to reduce bow of the circuit assembly; and removing the coating.

2. The method according to claim 1, wherein the circuit assembly comprises a sensor circuit assembly with interconnection embedded in the bond interface.

3. The method according to claim 1, wherein the first wafer comprises a detector.

4. The method according to claim 3, wherein the second wafer comprises a read out integrated circuit (ROIC).

5. The method according to claim 4, wherein the circuit assembly provides a sensor for a focal plane array.

6. The method according to claim 1, wherein the circuit assembly does not comprise epoxy.

7. The method according to claim 1, further including applying photoresist material to the first wafer prior to bonding the shim.

8. The method according to claim 7, further including applying a non-photosensitive material to the first wafer prior to bonding the shim.

9. The method according to claim 7, further including removing the photoresist material prior to annealing the circuit assembly.

10. The method according to claim 8, further including removing the non-photosensitive material prior to annealing the circuit assembly.

11. The method according to claim 1, wherein the bonding oxide bonding oxide has a uniformity of about 5000500 .

12. The method according to claim 1, wherein the shim comprises a material selected from the group consisting of Silicon, AlN, and sapphire.

13. An integrated circuit fabricated in accordance with claim 1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The foregoing features of this invention, as well as the invention itself, may be more fully understood from the following description of the drawings in which:

(2) FIG. 1 is a flow diagram showing an example sequence of steps for providing an assembly having an oxide bonded shim to reduce wafer bow;

(3) FIG. 2 is a schematic representation of an example assembly after bonding first and second layers with an oxide layer;

(4) FIG. 3 is a schematic representation of an example assembly after depositing a bonding oxide to a surface of the assembly;

(5) FIG. 4 is a schematic representation of an example assembly after thinning the first layer;

(6) FIG. 5 is a schematic representation of an example assembly after annealing;

(7) FIG. 6 is a schematic representation of an example assembly after applying a coating to a surface of the assembly in at least one region;

(8) FIG. 7 is a schematic representation of an example assembly after etching the assembly;

(9) FIG. 8 is a schematic representation of an example assembly after applying a photoresist material;

(10) FIG. 9 is a schematic representation of an example assembly after polishing the bonding oxide on the surface of the assembly;

(11) FIG. 10 is a schematic representation of an example assembly after bonding a shim to the assembly using the oxide layer; and

(12) FIG. 11 is a schematic representation of an example assembly after removing the photoresist material.

DETAILED DESCRIPTION

(13) FIG. 1 shows example process steps for providing an assembly having a shim in which bonding oxide deposition is integrated into the process for minimizing damage to a front side of the assembly, such as an imager forming part of a focal plane array (FPA). The assembly can include an oxide-bonded shim to reduce bow in the sensor and flatten an optical plane for enhanced sensor performance.

(14) In step 10 of FIG. 1 and referring to FIG. 2, a first wafer 102 is bonded to a second wafer 104 with a bonding oxide layer 106 to form an assembly 108, which can be provided as a sensor chip assembly (SCA). In embodiments, DBH bonding can be used to attach the first and second wafers 102, 104 with integrated interconnection layer for electrical connections using embedded metal posts and high temperature annealing in a manner well known in the art.

(15) In embodiments, the first wafer 102 corresponds to a detector and the second wafer 104 corresponds to a read out integrated circuit (ROIC). As is known in the art, a ROIC refers to an integrated circuit configured to read data from certain types of detectors, such as infrared sensors. In general, the ROIC accumulates photocurrent from pixels for transferring the respective pixel signals onto output taps for readout. The pixels can form a focal plane array to detect a variety of signals.

(16) It is understood that the first and second wafers can be provided with any suitable functionality and features to meet the needs of a particular embodiment. It is understood that a SCA having a first wafer provided as a detector and a second wafer provided as a ROIC is one particular embodiment that should not be construed as limiting with respect to the functionality of the wafers in an assembly. The assembly can have varying thicknesses depending upon the application. An illustrative thickness is about 725 m.

(17) In step 12, and referring to FIG. 3, a bonding oxide 110 for later attachment of a shim is deposited onto the second wafer 104 of the assembly 108. In embodiments, the assembly 108 is flipped prior to application of the bonding oxide 110 using ion implantation and annealing. The bonding oxide 110 has a thickness selected to achieve certain tuning of wafer bow/flatness characteristics. It will be appreciated that in many applications, such as FPAs, it is desirable to minimize bow of the detectors and/or complete hybrid focal plane structure.

(18) In step 14, referring to FIG. 4, the first wafer 102 is processed so that a thickness 115 of the first wafer 102 is reduced to a desired level, such as about 40 m. For an illustrative visible hybrid CMOS imager the range is about 5-185 m, depending on the required spectral response in the near infrared spectrum.

(19) In embodiments, the bonding oxide layer 110 to later attach a shim is applied prior thinning the first wafer 102. With this arrangement, the likelihood of damage to the first wafer 102 (i.e., the detector) is reduced as compared with conventional processing techniques in which an attachment mechanism is applied to second wafer 104 (i.e., the ROIC) after wafer thinning (backgrind and CMP) so that the assembly 108 must be flipped and possibly damaged. In the conventional process, the bonding oxide is applied after the SCA completion. This requires the fragile imaging surface of the top device to be place face down in onto chucks and handled with vacuum tooling which can scratch the surface, causing optical defects or circuit damage.

(20) In step 16, referring to FIG. 5, the assembly 108 is subject to implant and laser anneal to form layer 116 for the first wafer 102. This process is used to apply a conductive layer to the backside surface after hybrid processing has completed, where thermal anneal temperatures (>900 C.) cannot be tolerated.

(21) In optional step 18, referring to FIG. 6, a coating 120, such as an optical anti-reflective coating (ARC) is applied to the assembly. In embodiments, the coating 120 has a first portion 120a covering a first region of the detector layer of the first wafer 102 and a second portion 120b covering a second region of the detector layer. Any damage to the multi-layer ARC films will result in reduced optical performance of the sensor.

(22) In step 20, referring to FIG. 7, the assembly 108 is etched to singulate the detector wafer into individual die 122 of the second wafer 104 to form multiple detectors 124, 126 on respective die.

(23) In step 22, referring to FIG. 8, a photoresist coating 128 is applied to the assembly 108 to protect the detectors 124, 126. The coated assembly 108 can be baked to cure the photoresist material, as needed.

(24) In step 24, referring to FIG. 9, the bonding oxide layer 110 that was applied to second wafer 104 for bonding a shim is polished, such as by CMP (chemical mechanical planarization) polishing to produce a surface roughness acceptable for fusion bonding. In embodiments, the assembly 108 is flipped for polishing.

(25) In step 26, referring to FIG. 10, a shim 130 is applied to the oxide layer 110 on the surface of the second wafer 104. In embodiments, the shim 130 can be bonded at or about room temperature. In one embodiment, the shim 130 is manually applied to the assembly 108. In other embodiments, suitable machines are used to attach the shim 130. It will be appreciated that the annealing temperature for oxide activation of layer 110 should be less that the annealing temperature used during annealing to DBH bond the first and second wafers 102 and 104 of the assembly 108 in step 10. For example, the interconnection DBH bond can occur at 300 C., whereas the shim bond can occur at 200 C., so the shim bond will not affect the interconnection.

(26) In embodiments, the shim 130 can comprise silicon with a thickness and rigidity to achieve a desired reduction in wafer bow. Examples of shim materials include Silicon (100-3000 m), (500-3000 m), and sapphire (500-3000 m).

(27) In step 28, referring to FIG. 11, the photoresist material 128 can be removed from the assembly 108 which can then be annealed in step 30. In embodiments, annealing of the assembly 108 is performed at a temperature in the order of 150 degrees. The anneal converts the weak van der Waal bond to a very strong covalent bond to increase the wafer bond strength, rendering the bond permanent.

(28) In embodiments, by using the shim, pre-existing bow in the die is significantly reduced or eliminated resulting in an ultra-flat optical surface. In addition, the use of bonding oxide for securing the shim to the assembly generates minimal, if any, voids, which may be an issue in epoxy-based shim processing. Application epoxy is generally challenging to deliver thin, uniform layers without voided regions due to the thick viscosity and deposition methods. Any voids in the layer will become a bond void after wafer bonding, leading to poor thermal and mechanical properties.

(29) It is understood that embodiments of the invention are applicable to a wide range of devices having die for which flatness is desirable, such as SCAs and FPAs. A sensor chip assembly (SCA) or focal plane array (FPA) refers to an image sensing device having an array of light-sensing pixels at the focal plane of a lens. FPAs may be useful for imaging applications, such as taking pictures or videos, as well as non-imaging applications. Example applications include spectrometry, LIDAR, guidance systems, inspection, wave-front sensing, infrared astronomy, manufacturing inspection, thermal imaging for firefighting, medical imaging, and infrared phenomenology. Some FPAs operate by detecting photons at particular wavelengths and generating an electrical charge, voltage, or resistance in relation to the number of photons detected at each pixel. This charge, voltage, or resistance is then measured, digitized, and used to construct an image of the object, scene, or phenomenon that emitted the photons.

(30) In illustrative embodiments, a die can have an example bow of +/50 microns prior to processing and an example bow of about 2 microns after processing with an example range of about 5 ms. In an illustrative embodiment, a die having a pre-processing bow of about 50 microns and a post-processing bow of about 2 microns provides a 96% reduction in bow. An example shim will have a bow of less than about 2 microns.

(31) Having described exemplary embodiments of the invention, it will now become apparent to one of ordinary skill in the art that other embodiments incorporating their concepts may also be used. The embodiments contained herein should not be limited to disclosed embodiments but rather should be limited only by the spirit and scope of the appended claims. All publications and references cited herein are expressly incorporated herein by reference in their entirety.

(32) Elements of different embodiments described herein may be combined to form other embodiments not specifically set forth above. Various elements, which are described in the context of a single embodiment, may also be provided separately or in any suitable subcombination. Other embodiments not specifically described herein are also within the scope of the following claims.