PHOTOCONDUCTOR READOUT CIRCUIT
20230039433 · 2023-02-09
Inventors
- Celal Mohan Oeguen (Ludwigshafen, DE)
- Bernd Scherwath (Ludwigshafen, DE)
- Peter Fejes (Ludwigshafen, DE)
- Felix Berno Mueller (Ludwigshafen, DE)
Cpc classification
H01L31/09
ELECTRICITY
H01L31/02016
ELECTRICITY
International classification
Abstract
Disclosed herein is a device including at least one photoconductor configured for exhibiting an electrical resistance R.sub.photo dependent on an illumination of a light-sensitive region of the photoconductor; at least one photoconductor readout circuit, where the photoconductor readout circuit is configured for determining a differential voltage related to changes of the electrical resistance R.sub.photo of the photoconductor, where the photoconductor readout circuit includes at least one bias voltage source configured for applying at least one periodically modulated bias voltage to the photoconductor such that the electric output changes its polarity at least once; and at least one electrical circuit configured to balance the differential voltage at a given illumination level.
Claims
1. A device comprising at least one photoconductor configured for exhibiting an electrical resistance R.sub.photo dependent on an illumination of a light-sensitive region of the photoconductor; at least one photoconductor readout circuit, wherein the photoconductor readout circuit is configured for determining a differential voltage related to changes of the electrical resistance R.sub.photo of the photoconductor, wherein the photoconductor readout circuit comprises at least one bias voltage source configured for applying at least one periodically modulated bias voltage to the photoconductor such that the electric output changes its polarity at least once; and at least one electrical element configured to balance the differential voltage at a given illumination level.
2. The device according to claim 1, wherein the photoconductor readout circuit comprises a Wheatstone bridge or a sample-and-hold circuit.
3. The device according to claim 1, wherein the bias voltage modulation is unipolar or bipolar.
4. The device according to claim 1, wherein the bias voltage modulation has a frequency of the power line frequency especially 50 Hz or 60 HZ.
5. The device according to claim 1, wherein the device comprises at least one coupling to at least one evaluation device.
6. The device according to claim 1, wherein the illumination is modulated.
7. The device according to claim 1, wherein the light-sensitive region comprises at least one photoconductive material selected from the group consisting of lead sulfide (PbS); lead selenide (PbSe); mercury cadmium telluride (HgCdTe); cadmium sulfide (CdS); cadmium selenide (CdSe); indium antimonide (InSb); indium arsenide (InAs); indium gallium arsenide (InGaAs); extrinsic semiconductors, and organic semiconductors.
8. A detector comprising at least one device according to claim 1, wherein the detector comprises at least one evaluation device configured for determining an output signal of at least one output of the photoconductor readout circuit of the device, wherein the evaluation device is configured for determining an illumination intensity by evaluating the output signal.
9. The detector according to claim 8, wherein the evaluation device is configured for performing one or more operations selected from the group consisting of: at least one Fourier transformation; a counting of frequency, an edge detection, and a measurement of the period length.
10. A method of using a device according to claim 1, for a purpose of readout of one or more of at least one PbS sensor, at least one PbSe sensor, or at least one pixelated sensor array comprising a plurality of pixels, wherein each of the pixels comprises at least one PbS or PbSe sensor.
Description
BRIEF DESCRIPTION OF THE FIGURES
[0053] Further optional details and features of the invention are evident from the description of preferred exemplary embodiments which follows in conjunction with the dependent claims. In this context, the particular features may be implemented alone or with features in combination. The invention is not restricted to the exemplary embodiments. The exemplary embodiments are shown schematically in the figures. Identical reference numerals in the individual figures refer to identical elements or elements with identical function, or elements which correspond to one another with regard to their functions.
[0054] Specifically, in the figures:
[0055]
[0056]
[0057]
[0058]
EXEMPLARY EMBODIMENTS
[0059]
[0060] One of the resistors of the Wheatstone Bridge can be replaced by a photoconductor 105 with a suitable resistance but darkened. Photoconductors are sensors, which require an external excitation signal to generate an electrical output depending on the measured physical quantity. In the case of photoconductors is this physical quantity the illumination. Most commonly, a voltage V.sub.Bias 106 is applied to the photoconductor 105 as excitation signal.
[0061] The photoconductor 105 change their resistance depending on the illumination. The change itself is relatively small compared to the total resistance value of the photoconductor. As an example, a PbS-detector with dimension of 2 mm×2 mm featuring a resistance of about 1 MΩ changes its resistance due to infrared radiation at 1550 nm with an irradiance of 16 μW/cm2 about 10 kΩ, which corresponds 1% change. Thus, the excitation signal will be orders of magnitude greater than the electrical output change due to the illumination. Without any filtering, the read-out electronics should be able to measure the whole signal but still solve the change of 1% with a relatively good resolution. Such read-out electronics are commercially available, yet very expensive.
[0062] Photoconductors, PbS, PbSe etc., as other types of resistors like carbon composite, thick film resistors etc., exhibit a strong 1/f noise, also known as flicker noise, which is dominant at smaller frequencies. 1/f noise depends strongly on the DC part of the current IDC, flowing through the photoconductor.
[0063] The 1/f noise dominates at lower frequencies. The change of R.sub.photo should be measured at higher frequencies to eliminate the 1/f-noise. The measurement noise can be reduced by modulating the current flowing through the photoconductor, by modulating the resistance of the conductor R.sub.Photo or modulating the excitation signal.
[0064] Most commonly, either the light source is modulated or the light path from the light source to the detector is chopped, for example with a mechanical setup, such as a chopper or shutter etc. The modulated signal is then demodulated in analog or digital domain but keeps the 1/f noise at the modulation frequency, thus reducing the 1/f noise.
[0065] When illuminated the resistor R.sub.photo is changing its properties, and so the Wheatstone Bridge results in a differential voltage different from 0V. Any drift of the bias voltage 106 due to a temperature instability of the system can be balanced with the darkened photoconductor 105 and the differential voltage 107 will remain 0V during the on-phase or the off-phase of the light modulation.
[0066] Changing the polarity of the source voltage 108 changes polarity of the bias voltage 106. This setup is shown in
[0067]
[0068]
[0069] The resulting output voltage 207 is shown in
[0070] In
[0071] Even if the differential voltage cannot be balanced by means of a Wheatstone Bridge, the resulting offset can be compensated with the help of further electronic components such as “Offset DAC”. Another possible implementation is a sample and hold circuit, which measures (samples) the DC part while the modulated light is off and use it as the reference potential of the differential voltage measurement while the modulated light is switched on, or vice versa. Independent of any temperature or electrochemical drift of R.sub.Photo, the reference voltage V.sub.Ref will always be recalibrated when a sample and hold circuit is used.
[0072] An example for the inventive photoconductor readout circuit is shown in
LIST OF REFERENCE NUMBERS
[0073] 101 source voltage V.sub.S [0074] 102 resistor R.sub.1 [0075] 103 resistor R.sub.2 [0076] 104 resistor R.sub.3 [0077] 105 photoresistor R.sub.Photo [0078] 106 bias voltage V.sub.Bias [0079] 107 output voltage V.sub.Diff [0080] 108 source AC [0081] 201 source V.sub.S [0082] 202 resistor R.sub.1 [0083] 203 resistor R.sub.2 [0084] 204 resistor R.sub.3 [0085] 205 photoresistor R.sub.Photo [0086] 206 bias voltage V.sub.Bias [0087] 207 output voltage V.sub.out [0088] 208 trigger [0089] 301 source V.sub.S [0090] 302 resistor R.sub.1 [0091] 305 photoresistor R.sub.Photo [0092] 306 bias voltage V.sub.Bias [0093] 307 output voltage V.sub.out [0094] 308 trigger AC [0095] 309 trigger AC [0096] 310 lamp trigger [0097] 311 component [0098] 312 switch [0099] 313 switch [0100] 314 switch [0101] 315 switch [0102] 316 switch [0103] 317 ground [0104] 318 ground