Metal phosphide nanomaterials prepared from single source metal amides

10836638 ยท 2020-11-17

Assignee

Inventors

Cpc classification

International classification

Abstract

The present invention provides a novel solution or route for metal phosphide (MP.sub.x) nanomaterials from the thermal decomposition of metal bis[bis(diisopropylphosphino)amide], M[N(PPri.sub.2).sub.2].sub.2, and/or single-source precursors. Synthetic routes to MP.sub.x nanomaterials may be used in energy applications including batteries, semiconductors, magnets, catalyst, lasers, inks, electrocatalysts and photodiodes.

Claims

1. A method of making nanomaterials comprising the steps of: providing a precursor, said precursor is a solution comprising a metal bis[bis(diisopropylphosphino) amide [M[N(PR.sub.2).sub.2].sub.x].sub.y; thermally decomposing said metal bis[bis(diisopropylphosphino) amide [M[N(PR.sub.2).sub.2].sub.x].sub.y precursor to form metal phosphide nanomaterials; wherein M is a metal; wherein R is a linear or branched alkyl group and substituted analogs, an aryl or substituted aryl, a silyl alkyl or silyl aryl, or mixtures thereof; wherein x is 0, 1, 2, 3, 4, or 5 depending on the valent state of said metal; and wherein x is chosen to balance the charges of said [M[N(PR.sub.2).sub.2].sub.x].sub.y molecule; and wherein y ranges from 1 to about 5.

2. The method of claim 1 wherein said nanomaterials are MP.sub.x.

3. The method of claim 1 wherein said nanomaterials are M.sub.xP.sub.y.

4. The method of claim 1 wherein M is a metallic element selected from the group consisting of Groups 1-15 in the Period Table of the Elements.

5. The method of claim 1 wherein M is a Lanthanide.

6. The method of claim 1 wherein M is an Actinide.

7. The method of claim 1 wherein said precursor converts to SnP.

8. The method of claim 1 wherein said precursor converts to Sn.sub.4P.sub.3.

9. The method of claim 1 further comprising controlling the size of said nanomaterials by changing the temperature of said thermal decomposition.

10. The method of claim 1 wherein M is a metallic element selected from the group consisting of Al, Ga, In, and Tl.

11. The method of claim 1 wherein M is a metallic element selected from the group consisting of Ge, Sn, and Pb.

12. The method of claim 1 wherein M is a metallic element selected from the group consisting of Sb and Bi.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

(1) In the drawings, which are not necessarily drawn to scale, like numerals may describe substantially similar components throughout the several views. Like numerals having different letter suffixes may represent different instances of substantially similar components. The drawings illustrate generally, by way of example, but not by way of limitation, a detailed description of certain embodiments discussed in the present document.

(2) FIG. 1 illustrates a substituent that may be used with an embodiment of the present invention.

(3) FIG. 2 illustrates different metal/ligands and ratios that may be used with embodiments of the present invention.

(4) FIG. 3 illustrates a substituent that may be used with an embodiment of the present invention.

(5) FIG. 4 illustrates another substituent that may be used with an embodiment of the present invention.

(6) FIG. 5A is a TEM image an embodiment of the present invention.

(7) FIG. 5B is a TEM image of another embodiment of the present invention.

(8) FIG. 6A shows an x-ray diffraction pattern of the embodiment of the present invention shown in FIG. 5A.

(9) FIG. 6B shows an x-ray diffraction pattern of the embodiment of the present invention shown in FIG. 5B.

DETAILED DESCRIPTION OF THE INVENTION

(10) Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention in virtually any appropriately detailed method, structure or system. Further, the terms and phrases used herein are not intended to be limiting, but rather to provide an understandable description of the invention.

(11) The present invention provides a general solution synthetic route for the production of metal phosphides (nanoscale to bulk) materials. In a preferred embodiment, the present invention does not require high processing temperatures (>350 C.) or additional thermal treatments, and avoids halide contamination in the final product.

(12) In one preferred embodiment, metal phosphide nanomaterials, which may be M.sub.xP.sub.y, may be prepared from the thermal decomposition of a single source precursor such as a metal bis[bis(diisopropylphosphino)amide], M[N(PPr.sub.2.sup.i).sub.2].sub.2, M[N(PR.sub.2).sub.2].sub.x, or [M[N(PR.sub.2).sub.2].sub.x].sub.y, in high boiling coordinating or non-coordinating solvents. In other embodiments of the present invention, the precursor may be from several sources.

(13) In another preferred embodiment of the present invention, the precursor converts to particles having a size in the range of 5-100 nm. In one embodiment, the precursor is used to produce SnP or Sn.sub.4P.sub.3, which may be in the size range of 5-100 nm. The particles may be formed by a solution precipitation processing route using Sn[N(PPr.sub.2.sup.i).sub.2].sub.2 in trioctylphosphine. In addition, depending on the conditions used (e.g.; solvent, time, temperature) the particle size and phase may be controlled.

(14) In other embodiments, M may be a metallic element selected from the group consisting of Groups 1-15 in the Period Table of the Elements, Lanthanide elements (numbers 58-71), Actinide elements (numbers 90-92) or any transition metal which is a member of Group 3. In yet other embodiments, M is a metallic element selected from the group consisting of Mg, Ca, Sr, Sn, Al, Ga, In, Ti, Ge, Pb, Sb, Bi, Th, Pa, U, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Ba.

(15) In other embodiments, R may be Pr.sup.I. R may also equal H, or be any linear or branched alkyl group and substituted analogs, any aryl or substituted aryl, any silyl alkyl or silyl aryl group, or any other group that serves essentially the same purpose, or mixtures thereof.

(16) In yet other embodiments, x may vary from 1 to 5 depending on the valent state of the metal, where x is chosen to balance the charges of the precursor such as M[N(PPr.sub.2.sup.i).sub.2].sub.2, M[N(PR.sub.2).sub.2].sub.x, or [M[N(PR.sub.2).sub.2].sub.x].sub.y.

(17) In other embodiments, the present invention provides nanoparticle precursors other than isopropyls. For example, in yet another preferred embodiment, the present invention provides a mixture of isopropyl and phenyl substituents that may be used as the nanoparticle precursors as shown in FIG. 1, including any salt, stereoisomer, or adduct thereof.

(18) In yet other embodiments, besides providing a metal with two ligands (i.e. M[N(P.sup.iPr.sub.2).sub.2].sub.2), the present invention may also provide a 1:1 metal/ligand ratio as well as other stoichiometries as shown in FIG. 2 including any salt, stereoisomer, or adduct thereof. FIGS. 3 and 4 illustrate other substituents that may be used with the embodiments of the present invention, including any salt, stereoisomer, or adduct thereof, wherein each R can be the same or different and each M can be the same or different.

(19) FIG. 5A and FIG. 5B show TEM images of nanomaterials made in accordance with the teachings of the present invention. FIG. 6A shows an x-ray diffraction pattern of the nanomaterial shown in FIG. 5A. FIG. 6B shows an x-ray diffraction pattern of the nanomaterial shown in FIG. 5B.

(20) While the foregoing written description enables one of ordinary skill to make and use what is considered presently to be the best mode thereof, those of ordinary skill will understand and appreciate the existence of variations, combinations, and equivalents of the specific embodiment, method, and examples herein. The disclosure should therefore not be limited by the above described embodiments, methods, and examples, but by all embodiments and methods within the scope and spirit of the disclosure.