ULTRAVIOLET LIGHT RECEIVING DEVICE

Abstract

Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 10.sup.5 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

Claims

1. A Schottky ultraviolet light receiving device configured to have a peak photosensitivity wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, wherein a rejection ratio that is a ratio of a responsivity Rp to the peak photosensitivity wavelength to an average of responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv) is 10.sup.5 or more.

2. The ultraviolet light receiving device according to claim 1, comprising an AlN layer on a sapphire substrate and an AlGaN laminate made up of a plurality of AlGaN layers having different Al composition ratios on the AlN layer, wherein illumination light for measuring the responsivity enters through the sapphire substrate.

3. The ultraviolet light receiving device according to claim 1, wherein a half width of a photosensitivity spectrum of the ultraviolet light receiving device is 40 nm or less.

4. The ultraviolet light receiving device according to claim 2, wherein the AlGaN laminate has an Al.sub.wGa.sub.1-wN buffer layer (0.5≤w≤0.95) and an Al.sub.zGa.sub.1-zN light receiving layer in this order from the AlN layer side, and the values of the Al composition ratios satisfy a relationship of z<w.

5. The ultraviolet light receiving device according to claim 4, wherein the AlGaN laminate has an n-type Al.sub.xGa.sub.1-xN current spreading layer and an n-type Al.sub.yGa.sub.1-yN ohmic contact layer in this order from the AlN layer side between the Al.sub.wGa.sub.1-wN buffer layer and the Al.sub.zGa.sub.1-zN light receiving layer, and the values of the Al composition ratios satisfy a relationship of z≤y<x≤w.

6. The ultraviolet light receiving device according to claim 5, wherein the Al.sub.zGa.sub.1-zN light receiving layer has an etched portion where the n-type Al.sub.yGa.sub.1-yN ohmic contact layer is exposed, an n-type ohmic electrode is provided on the exposed n-type Al.sub.yGa.sub.1-yN ohmic contact layer, and a Schottky electrode is placed on the Al.sub.zGa.sub.1-zN light receiving layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In the accompanying drawings:

[0033] FIG. 1 is a graph illustrating the dependence of the transmittance of an Al.sub.xGa.sub.1-xN layer on a sapphire substrate on the Al composition ratio x according to the studies by the present inventors;

[0034] FIG. 2 is a schematic view of a cross-sectional structure of an epitaxial substrate having an AlGaN laminate which can be used in an ultraviolet light receiving device according to this disclosure;

[0035] FIG. 3 is a schematic view of a cross-sectional structure of an ultraviolet light receiving device according to this disclosure;

[0036] FIG. 4 is a graph presenting the I-V characteristics of an ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 260 nm) in Example 1;

[0037] FIG. 5A is a line graph of the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 260 nm) in Example 1, with its half width;

[0038] FIG. 5B is a semi-log graph of the wavelength dependence of the responsivity for presenting the rejection ratio of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 260 nm) in Example 1 with respect to the visible light region;

[0039] FIG. 6 is a graph presenting the I-V characteristics of an ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 320 nm) in Example 2;

[0040] FIG. 7A is a line graph of the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 320 nm) in Example 2, with its half width;

[0041] FIG. 7B is a semi-log graph of the wavelength dependence of the responsivity for presenting the rejection ratio of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 320 nm) in Example 2 with respect to the visible light region;

[0042] FIG. 8 is a graph presenting the I-V characteristics of an ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 230 nm) in Example 3;

[0043] FIG. 9A is a line graph of the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 230 nm) in Example 3, with its half width;

[0044] FIG. 9B is a semi-log graph of the wavelength dependence of the responsivity for presenting the rejection ratio of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 230 nm) in Example 3 with respect to the visible light region;

[0045] FIG. 10 is a graph presenting the photocurrent-voltage characteristics of a Si light receiving device that detects light of a specific wavelength range in the ultraviolet region using a band-pass filter according to Comparative Example 1;

[0046] FIG. 11 is a semi-log graph of the wavelength dependence of the responsivity for presenting the rejection ratio of the Si light receiving device that detects light of a specific wavelength range in the ultraviolet region using a band-pass filter according to Comparative Example 1 with respect to a visible light region;

[0047] FIG. 12A is a line graph of the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 260 nm) to illumination from the light receiving layer side in Comparative Example 2-1, with its half width;

[0048] FIG. 12B is a semi-log graph illustrating the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 260 nm) in Comparative Example 2-1, for presenting the rejection ratio with respect to the visible light region of illumination from the light receiving layer side;

[0049] FIG. 13A is a line graph of the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 320 nm) to illumination from the light receiving layer side in Comparative Example 2-2, with its half width;

[0050] FIG. 13B is a semi-log graph illustrating the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 320 nm) in Comparative Example 2-2, for presenting the rejection ratio with respect to the visible light region of illumination from the light receiving layer side;

[0051] FIG. 14A is a line graph of the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 230 nm) to illumination from the light receiving layer side in Comparative Example 2-3, with its half width; and

[0052] FIG. 14B is a semi-log graph illustrating the wavelength dependence of the responsivity of the ultraviolet light receiving device (having a photosensitivity peak at a wavelength of 230 nm) in Comparative Example 2-3, for presenting the rejection ratio with respect to the visible light region of illumination from the light receiving layer side.

DETAILED DESCRIPTION

[0053] <Photosensitivity Peak Wavelength>

[0054] A Schottky ultraviolet light receiving device according to this disclosure is an ultraviolet light receiving device having a photosensitivity peak wavelength λp in an ultraviolet region of 230 nm or more and 320 nm or less. The photosensitivity peak wavelength λp will now be described. When light of a certain wavelength λ (nm) in a wavelength range of 200 nm to 680 nm is emitted at a light intensity Q (W), the value of the photocurrent flowing through the light receiving device at a bias of 0 V is I (A). When the horizontal axis represents the wavelength λ and the vertical axis represents the responsivity R=I/Q (A/W) that is a value obtained by dividing the light intensity Q (W) by the photocurrent value I (A), the wavelength at a measurement point at which the value of the responsivity R takes the maximum maximal value (maximum value of responsivity: Rp) is the photosensitivity peak wavelength λp. The measurement wavelength interval Δλ here is 10 nm or less.

[0055] <Rejection Ratio>

[0056] For a Schottky ultraviolet light receiving device according to this disclosure, Rp/Rv that is the ratio of the responsivity Rp at the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less (the maximum value of responsivity) and the average responsivity Rv to a visible region of 400 nm or more and 680 nm or less (hereinafter referred to as “rejection ratio”) is 10.sup.5 or more.

[0057] Further, the ultraviolet light receiving device according to this disclosure has an AlN layer and an AlGaN laminate made up of a plurality of AlGaN layers having different Al composition ratios in this order on a sapphire substrate, and illumination light for measuring the responsivity preferably enters from the sapphire substrate side. In this AlGaN laminate, compared with AlGaN layers on the AlN layer side, AlGaN layers on the opposite side of the sapphire substrate preferably have a lower Al composition ratio. In the AlGaN laminate, an AlGaN layer having a lower Al composition ratio that is placed on the opposite side of the sapphire substrate is preferably a light receiving layer.

[0058] (Dependence of Spectral Transmittance on Al Composition Ratio)

[0059] Now, the origin of the idea of this disclosure will be described. FIG. 1 presents the dependence of the spectral transmittance measured by the present inventors on the Al composition ratio x. An AlN layer with a thickness of 1000 nm was grown on a c-plane sapphire substrate by MOCVD, and a 1000 nm undoped Al.sub.xGa.sub.1-xN layer was grown to prepare an epitaxial substrate. Total six such samples were prepared in which the Al composition ratio x of the undoped Al.sub.xGa.sub.1-xN layer was 0.25, 0.50, 0.56, 0.68, 0.85, and 1.0 (AlN when the Al composition ratio was 1.0) as given in the graph of FIG. 1. The transmittance of the samples having the undoped Al.sub.xGa.sub.1-xN layers with different Al composition ratios x was measured using an ultraviolet-visible (UV-VIS) spectrophotometer (model: U-3900) manufactured by Hitachi High-Tech Science Corporation with reference to the transmittance of a double-side mirror-polished sapphire substrate as a baseline. Note that the data of the transmittance of the sapphire substrate are also included in FIG. 1; however, the data used the atmosphere as a reference. The sapphire substrate has a transmittance of 80% or more to the entire range from 200 nm to 600 nm. Referring to FIG. 1, the rising edge of the transmittance is found to be on the longer wavelength side in order from the higher Al composition ratio side (x=1.0) to the lower Al composition ratio side (x=0.25).

[0060] A study is made of a light receiving device provided with an AlGaN laminate having a laminate structure in which the Al composition ratios x of Al.sub.xGa.sub.1-xN layers on a sapphire substrate are sequentially reduced (compared with layers on the AlN layer side in the AlGaN laminate, layers on the opposite side of the sapphire substrate have a lower Al composition ratio) and a Schottky electrode on the AlGaN laminate. When light enters from the sapphire substrate side, light of short wavelengths is absorbed and cut by the AlGaN layers having an Al composition ratio higher than the Al composition ratio of the light receiving layer. For example, when the Al composition ratio of the light receiving layer is 0.56, and an AlGaN layer having an Al composition ratio of 0.85 is placed closer to the sapphire substrate (AlN layer) than to the light receiving layer, the photosensitivity peak can be found between approximately 220 nm to approximately 250 nm. The present inventors considered that photosensitivity to a narrow wavelength range can be achieved by sequentially stacking AlGaN layers having different Al composition ratios on a sapphire substrate as described above.

[0061] (Comparison in Relation to Direction of Entry of Detection Light)

[0062] On the other hand, they considered a case where light enters an epitaxial substrate having an AlGaN laminate with the same composition and the same structure through the surface of the AlGaN laminate and not from the sapphire substrate side. In this case, the transmittance characteristics of the device is similar to those of a layer having a low Al composition ratio in the AlGaN laminate (for example, a light receiving layer). For example, when the Al composition ratio of the AlGaN layer is 0.25, the device has photosensitivity to a wide wavelength range in short wavelengths of approximately 320 nm or less. In this case, there is only the Schottky electrode between the incident light and the light receiving layer. It should be noted that since detection light needs to be guided to the light receiving layer through the Schottky electrode, the Schottky electrode necessarily has a structure allowing the light to be guided to the light receiving layer by a method in which an extremely thin semitransparent electrode is used or the electrode is partly cut out.

[0063] Unlike the case where light enters through the surface of the AlGaN laminate, when light enters from the sapphire substrate side, a sufficiently large light receiving area can be ensured, and light reaches a layer having a low Al composition ratio in the AlGaN laminate (for example, the light receiving layer) through AlGaN layers having a higher Al composition ratio than the light receiving layer as well as the sapphire substrate. Thus, light of shorter wavelengths can be filtered out, thus the device can have photosensitivity only to a narrow range in the ultraviolet region. When light enters from the Schottky electrode material side, the removal of light of wavelengths shorter than a target wavelength range in the ultraviolet region by filtering is considered to be substantially impossible unlike the case where light enters from the sapphire substrate side.

[0064] <Half Width>

[0065] For an ultraviolet light receiving device according to this disclosure, the half width (FWHM) of the photosensitive spectrum is preferably 40 nm or less. When the horizontal axis represents the wavelength λ and the vertical axis represents the responsivity R=I/Q (A/W) found by dividing the photocurrent value I (A) by the light intensity Q (W), the photosensitivity spectrum is displayed as straight lines connecting the measurement points. The half width of a photosensitivity spectrum is the width between the wavelengths at which the responsivity is half the maximum value of the responsivity at the photosensitivity peak in an ultraviolet region of 230 nm or more and 320 nm or less, found from the above photosensitivity spectrum.

[0066] With a laminate structure for which light enters from the sapphire substrate side and the Al composition ratios x of the Al.sub.xGa.sub.1-xN layers on the sapphire substrate are sequentially lower, photosensitivity to a narrow wavelength range can be achieved by filtering out light of shorter wavelengths; accordingly, an appropriate combination of the Al composition ratios x can make the half width of the photosensitivity spectrum to be 40 nm or less. In another preferred aspect, the photosensitivity spectrum has a spectral shape that is almost symmetric with respect to the photosensitivity peak. On the other hand, when light of shorter wavelengths is not filtered out as in the case where light enters through the Schottky electrode material, the photosensitivity spectrum greatly extends to the short wavelength side, thus the half width is greater than 40 nm. Moreover, the photosensitivity spectrum has an asymmetric spectral shape.

[0067] An example of an epitaxial substrate that can be used to fabricate an ultraviolet light receiving device according to this disclosure will now be described with reference to FIG. 2. For convenience of description, the Al composition ratios of the layers in the AlGaN laminate are hereinafter expressed as w, x, y, and z in this order from the sapphire substrate side. The epitaxial substrate depicted in FIG. 2 has an AlN layer 12 on a sapphire substrate 11, and has an Al.sub.wGa.sub.1-wN buffer layer 13, an n-type Al.sub.xGa.sub.1-xN current spreading layer 14, an n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15, and an Al.sub.zGa.sub.1-zN light receiving layer 16 in this order on the AlN layer 12. The value of the Al composition ratio of each layer can be measured by a photoluminescence measurement and an X-ray diffraction measurement, and the thickness of each layer can be measured using a thickness measurement system using optical interferometry.

[0068] <Sapphire Substrate>

[0069] A commercially available sapphire substrate can be used, and its thickness may be for example 80 μm to 2000 μm. The standard thickness of currently commercially available ones is 430 μm for a diameter of 2 in, 650 μm for a diameter of 4 in, and 1000 μm to 1300 μm for a diameter of 6 in.

[0070] <AlN Layer>

[0071] The AlN layer 12 is preferably provided on the sapphire substrate 11. The thickness of the AlN layer 12 may be 0.3 μm to 3 μm. The half width (full width at half maximum: FWHM) for the (10 12) plane found by X-ray diffraction is preferably 500 s or less. Alternatively, an AlN template substrate in which an undoped AlN layer 12 is epitaxially grown on a surface of the sapphire substrate may be used. With a view to reducing the dislocation density of the AlN layer 12, annealing at 1500° C. or more may be performed.

[0072] <AlGaN Laminate>

[0073] The AlGaN laminate preferably has the Al.sub.wGa.sub.1-wN buffer layer 13 (0.5≤w≤0.95) and the Al.sub.zGa.sub.1-zN light receiving layer 16 in this order from the AlN layer side. In this case, the value of each Al composition ratio satisfies a relationship of z<w. Further, it is also preferred that the AlGaN laminate has the n-type Al.sub.xGa.sub.1-xN current spreading layer 14 and the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15 in this order from the AlN layer 12 side, between the Al.sub.wGa.sub.1-wN buffer layer 13 and the Al.sub.zGa.sub.1-zN light receiving layer 16. In this case, the AlGaN laminate has the Al.sub.wGa.sub.1-wN buffer layer 13, the n-type Al.sub.xGa.sub.1-xN current spreading layer 14, the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15, and the Al.sub.zGa.sub.1-zN light receiving layer 16 in this order from the AlN layer 12 side, and the value of the Al composition ratio of each layer in the AlGaN laminate preferably satisfies a relationship of z≤y<x≤w. A preferred aspect of each layer in the AlGaN laminate will now be described.

[0074] <<Al.sub.wGa.sub.1-wN Buffer Layer>>

[0075] The Al.sub.wGa.sub.1-wN buffer layer 13 is a layer that increases the crystallinity of the Al.sub.zGa.sub.1-zN light receiving layer 16 by reducing lattice mismatch between the AlN layer 12 and the Al.sub.zGa.sub.1-zN light receiving layer 16 and is a layer that filters out light of shorter wavelengths as described above. As given in FIG. 1, for an ultraviolet light receiving device having a photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, an AlN layer is less effective as a layer for filtering light of shorter wavelengths, so that the Al composition ratio w preferably satisfies a range of 0.5≤w≤0.95.

[0076] The thickness of the Al.sub.wGa.sub.1-wN buffer layer 13 is preferably a thickness sufficient for increasing the crystallinity, may be appropriately set for example within a thickness range of 0.3 μm to 3 μm, and may be for example a thickness of 1 μm. The Al.sub.wGa.sub.1-wN buffer layer 13 may be undoped or n-type doped; however, out of concern that the he transmittance would be reduced when high levels of impurities are contained, the impurity concentration is preferably less than 1×10.sup.17 cm.sup.−3, and the layer is more preferably undoped. Being undoped here means being subjected to no deliberate impurity doping, and means that the concentration of impurities such as Si excluding unavoidable impurities is 4×10.sup.16 cm.sup.−3 or less.

[0077] <<n-Type Al.sub.xGa.sub.1-xN Current Spreading Layer>>

[0078] The n-type Al.sub.xGa.sub.1-xN current spreading layer 14 is a layer for aiding the transverse flow of currents in the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15. Since the value of the Al composition ratio x is preferably equal to or lower than the Al composition ratio w of the Al.sub.wGa.sub.1-wN buffer layer 13, when the n-type Al.sub.xGa.sub.1-xN current spreading layer 14 is provided, its Al composition ratio x should satisfy x≤w.

[0079] The thickness of the n-type Al.sub.xGa.sub.1-xN current spreading layer 14 may be appropriately set within a range of 0.1 μm to 1 μm, and may be for example a thickness of 500 nm. The n-type dopant may use Si or Ge, and Si is preferably used. The n-type dopant concentration is preferably within a range of 5×10.sup.17 cm.sup.−3 to 2×10.sup.19 cm.sup.−3.

[0080] <<n-Type Al.sub.yGa.sub.1-yN Ohmic Contact Layer>>

[0081] The n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15 is a layer for flowing currents by being connected to an ohmic electrode to be described below in detail. When the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15 is provided, the value of the Al composition ratio y preferably has a relationship with the values of the Al composition ratios w and x:y<x≤w.

[0082] The thickness of the n-type Al.sub.xGa.sub.1-xN ohmic contact layer 15 may be appropriately set within a range of 0.1 μm to 1 μm, and may be for example a thickness of 200 nm. The n-type dopant may use Si or Ge, and Si is preferably used. The n-type dopant concentration is preferably within a range of 5×10.sup.17 cm.sup.−3 to 2×10.sup.19 cm.sup.−3.

[0083] <<Al.sub.zGa.sub.1-zN Light Receiving Layer>>

[0084] The Al.sub.zGa.sub.1-zN light receiving layer 16 is a layer that receives light and generates electricity. Carriers generated by light received can be extracted as currents with a Schottky electrode that is an extraction electrode and an ohmic electrode through the n-type Al.sub.yGa.sub.1-yN ohmic contact layer. The value of the Al composition ratio z of the Al.sub.zGa.sub.1-zN light receiving layer 16 preferably has a relationship with the values of the Al composition ratios w, x, and y: z≤y<x≤w.

[0085] The Al.sub.zGa.sub.1-zN light receiving layer 16 may be undoped and may alternatively be deliberately n-type doped. The carrier concentration is preferably less than 1×10.sup.17 cm.sup.−3. The thickness of the Al.sub.zGa.sub.1-zN receiving layer 16 may be appropriately set within a range of 0.1 μm to 1 μm, and may be for example a thickness of 300 nm.

[0086] <Electrode>

[0087] The shape of the electrode provided in the ultraviolet light receiving device according to this disclosure is not limited; for example, a Schottky electrode may be provided on the Al.sub.zGa.sub.1-zN light receiving layer 16, and an n-type ohmic electrode may be provided on the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15. In this case, the Al.sub.zGa.sub.1-zN light receiving layer 16 has an etched portion in which the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15 is exposed, and an n-type ohmic electrode can be provided on the exposed n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15.

[0088] In Examples to be described below, when an ultraviolet light receiving device is viewed from above, the shape of the Schottky electrode is circular, and the above Schottky electrode is placed in a circular hollow at the center of a rectangular n-type ohmic electrode; alternatively, the shape of the Schottky electrode may be rectangular, polygonal, etc. instead of being circular, and the shape of the n-type ohmic electrode may also be any given shape depending on the shape of the Schottky electrode.

[0089] (Example of Method of Producing Epitaxial Substrate)

[0090] The undoped AlN layer 12 is grown to approximately 1 μm on the c plane of the sapphire substrate 11 by MOCVD. The undoped Al.sub.wGa.sub.1-wN buffer layer 13 having an Al composition ratio w within a range of 0.5≤w≤0.95 is grown to for example approximately 1 μm on the AlN layer 12. Next, in order to reduce the resistance in the ultraviolet light receiving device in the transverse direction, the n-type Al.sub.xGa.sub.1-xN current spreading layer 14 is grown to for example approximately 500 nm. The Al composition ratio x in this case satisfies y≤x≤w, and the n-type dopant is Si and may be added using for example a silane (SiH.sub.4) gas diluted with hydrogen. Next, the n-type Al.sub.yGa.sub.1-yN ohmic contact layer 15 is grown to for example approximately 200 nm. The Al composition ratio y in this case should satisfy y≤x. Next, the undoped Al.sub.zGa.sub.1-zN light receiving layer 16 is deposited to for example approximately 300 nm. The Al composition ratio z satisfies z≤y. The composition of each AlGaN layer may be selected depending on the target photosensitivity range and photosensitivity peak wavelength, and at least a relationship of z<x≤w is preferably maintained. Examples of a raw material sources for epitaxially growing the layers, trimethylaluminum (TMA) may be used as an Al source, trimethylgallium (TMG) as a Ga source, and ammonia gas (NH.sub.3) as a nitrogen source. For a carrier gas, for example hydrogen (H.sub.2) may be used. The thickness of each layer in this example is by way of illustration, and the aforementioned thickness of each layer can be used.

[0091] A schematic view of a cross-sectional structure of an epitaxial substrate 100 provided with an AlGaN laminate that can be applied to this disclosure is depicted in FIG. 2 referred to above; an interlayer may be provided between each pair of adjacent layers in addition to the at least four AlGaN layers on the AlN layer 12. For example, the interlayer may be a composition graded layer or a controlled impurity concentration graded layer with which the difference between the composition ratios or the n-type dopant concentration of the layers is reduced. Alternatively, a layer having a composition ratio between the composition ratios of the adjacent layers or a layer having an impurity concentration between the impurity concentrations of the adjacent layers may be added.

[0092] (Example of Production Process of Ultraviolet Light Receiving Device)

[0093] FIG. 3 is a schematic view of a cross-sectional structure illustrating an example of the ultraviolet light receiving device according to this disclosure. An embodiment of a production method of obtaining devices by singulation of the epitaxial substrate 100 described above will be described. First, for the determination of dicing lines for the ultimate singulation and for an interim characteristics examination, processing is performed for providing isolation grooves 20 between the individual devices. To perform etching on the AlN layer and the epitaxial layers in the AlGaN laminate, and the sapphire substrate, dry etching using a chlorine-based gas is unavoidable. Accordingly, first, a pattern of a durable metal mask of for example Ni or Cr is formed on the epitaxial substrate 100. In this case, the above metal may be deposited to 500 nm or more by sputtering or vacuum deposition, followed by photolithography and etching, thus the pattern of the metal mask can be formed. Using the pattern of the metal mask formed as a mask, inductively coupled plasma (ICP) etching using a gas mixture of BCl.sub.3 and Cl.sub.2 and others, upper layers including at least the n-type Al.sub.xGa.sub.1-xN current spreading layer 14 (the AlN layer 12 in FIG. 3) are removed at the portions to be provided with the isolation grooves 20. Next, a pattern of a metal mask for forming ohmic contact portions is formed on the Al.sub.zGa.sub.1-zN light receiving layer 16 by photolithography and wet etching, and part of the Al.sub.zGa.sub.1-zN light receiving layer 16 and part of the n-type Al.sub.xGa.sub.1-xN ohmic contact layer 15 thereunder are removed by for example the dry etching described above, thereby forming the etched portions, thus, regions where the n-type Al.sub.xGa.sub.1-xN ohmic contact layer 15 is exposed in the etched portions are formed. After removing the metal for dry etching for example by wet etching, openings where the ohmic electrodes are to be formed in the above exposed regions are formed by photolithography, a metal stack (for example Ti/Al) for n-type ohmic electrodes 21 is deposited by vacuum deposition or the like, and a pattern for the n-type ohmic electrodes 21 is formed by the lift-off process. The n-type ohmic contact electrodes 21 can be formed by performing heat treatment after that. Further, to form Schottky electrodes 23 on the surface of the Al.sub.zGa.sub.1-zN light receiving layer 16, openings are formed by photolithography, and after depositing a Schottky metal by vacuum deposition or the like, the Schottky electrodes 23 are formed by lift-off. The Schottky metal may use Ni, Pd, Pt, Au, Ir, or the like that is a high work function material. Alternatively, a stack of these metals may be used. An interim electro-optic evaluation using a prober (a probing system for electrical characteristics evaluation) may be performed on devices in the wafer before being subjected to isolation by singulation. Subsequently, singulation is performed by various singulation methods (mechanical cutting, scribing and cutting, laser cutting, etc.).

EXAMPLES

[0094] The following provides a more detailed description of ultraviolet light receiving devices according to this disclosure using examples. However, this disclosure is not in any way limited by the following examples. First, an evaluation method for fabricated ultraviolet light receiving devices will be described.

[0095] (Evaluation Method for Photoelectric Characteristics of Light Receiving Device)

[0096] An evaluation of the electrical characteristics of a light receiving device was performed on a device in a wafer or a device obtained by singulation, and was performed by probing between the Schottky electrode and the ohmic electrode using a precision semiconductor parameter analyzer (4156C) manufactured by Agilent Technologies, Inc. The so-called I-V characteristics were evaluated by measuring the current values using a sweep voltage range of −20 V to +5 V. With a view to preventing electromagnetic noise and disturbance by indoor light, the measurement was performed in a dark shielding box. For the illumination direction, illumination was chiefly from the sapphire substrate side but for comparison, illumination from the Schottky electrode (epitaxial layer surface) side was also performed. For the illumination of samples, light from a 150 W xenon (Xe) light source (PS-X150) manufactured by JASCO Corporation was introduced into a spectrometer CT-25 manufactured by the same company through collector optics and optical filters both manufactured by the same company, the samples to be subjected to the evaluation was illuminated with the dispersed light through ultraviolet resistant UV-VIS optical fibers. Note that the illumination spot diameter on the sample surface was 1.2 mm, and the illumination light wavelength was in a range of 200 nm to 680 nm.

[0097] The absolute illumination power at the wavelengths was measured using two photosensors: PD300-UV manufactured by Ophir Optronics Solutions Ltd. and S2281 manufactured by HAMAMATSU PHOTONICS K.K., and it was determined that the absolute value error was up to a maximum of 10% in measurements for a wavelength range of 200 nm to 680 nm. Note that the responsivity at each wavelength is calculated by dividing the photocurrent value (A) by the illumination power (W) at a predetermined bias voltage, and thus is in A/W. When the rejection ratio as described above is determined, the quantity of illumination light of the visible light range is preferably larger. For the evaluation of the responsivity to a visible light range to which the sensitivity is low, measurements using three fiber-coupled LED light sources with center emission wavelengths of 455 nm, 530 nm, and 630 nm that have higher illumination power than spectroscopic light sources other than the spectroscopic light sources were performed to obtain reference data. The LED light sources allow for the illumination of the sample surface at approximately 6 mW at maximum by adjusting the supplied current.

Example 1

[0098] An ultraviolet light receiving device with a photosensitivity peak wavelength of 260 nm according to Example 1 was fabricated by MOCVD under the following epitaxial growth conditions. An undoped AlN (0001) epitaxial layer was grown to 800 nm on a c-plane sapphire substrate. Next, an undoped Al.sub.0.70Ga.sub.0.30N layer (corresponding to the Al.sub.wGa.sub.1-wN buffer layer) was grown to 1000 nm. Subsequently, a Si-doped n-type Al.sub.0.68Ga.sub.0.32N layer (corresponding to the n-type Al.sub.xGa.sub.1-xN current spreading layer) was grown to 500 nm, and a Si-doped n-type Al.sub.0.50Ga.sub.0.50N layer (corresponding to the n-type Al.sub.yGa.sub.1-yN ohmic contact layer) for forming ohmic contacts was then gown to 200 nm, and finally an undoped Al.sub.0.50Ga.sub.0.50N layer (corresponding to the Al.sub.zGa.sub.1-zN light receiving layer) was grown to 300 nm, thus an epitaxial substrate for a light receiving device was fabricated. When the chemical proportions of the AlGaN layers in the AlGaN laminate are expressed using the composition ratios (w, x, y, and z) as w=0.70, x=0.68, y=0.50, z=0.50. Next, in accordance with the example of a device production process of the ultraviolet light receiving device described above with reference to FIG. 3, an ultraviolet light receiving device with a device size of 2 mm (isolation groove width: 200 μm), including a Schottky electrode with a diameter of 1.6 mm at the device center and an n-type ohmic electrode around the Schottky electrode was fabricated. Ni was used as a metal for the Schottky electrode, and its thickness was 200 nm. Further, Ti/Al was used as a metal of the n-type ohmic electrode, and its total thickness was 210 nm. For the ultraviolet light receiving device obtained, the photocurrent-voltage (I-V) characteristics were measured for illuminations with different wavelengths from the sapphire substrate side, thus the responsivity to each wavelength was determined. In addition, LED light illumination was performed for the above three wavelengths in the visible region using fiber-coupled LED light sources, and the responsivity to each wavelength was also determined.

[0099] FIG. 4 illustrates the I-V characteristics in darkness and in the cases of illuminations with light of 260 nm and visible light of 530 nm. FIG. 5A gives the photosensitivity spectrum illustrating the wavelength dependence of the responsivity in the case where the bias voltage was 0 V. FIG. 5A demonstrates that the photosensitivity peak wavelength was 260 nm and its half width was 20 nm. In this case, the half peak wavelength on the shorter wavelength side was 250 nm. To clearly present the rejection ratio with respect to visible light, the responsivity (vertical axis) in FIG. 5A is represented in a semi-log graph in FIG. 5B. The filled circles (•) represent the wavelength dependence of the responsivity in the case where light from a Xe lamp light source was dispersed to illuminate the sample; besides, the results of the responsivities to 455 nm illumination (open triangle), 530 nm illumination (open rhombus), and 630 nm illumination (open square) using LEDs as light sources are added to FIG. 5B. The open triangle in FIG. 5B corresponds to 1.5 mW illumination, the open rhombus corresponds to 3.3 mW illumination, and the open square corresponds to 6.1 mW illumination. On the other hand, the illumination power of the spectrometer light source was 18.7 μW at 455 nm, 13.0 μW at 530 nm, and 8.5 μW at 630 nm.

[0100] The responsivity Rp to the photosensitivity peak wavelength at the filled circle (•) at a bias voltage of 0 V found using the spectrometer light source was 25.8 mA/W, and the average Rv of the responsivity to a visible region of 400 nm or more to 680 nm or less was 1.48×10.sup.−4 mA/W. A calculation using these values resulted in a rejection ratio (Rp/Rv) of 1.74×10.sup.5 that was a rejection ratio not lower than 10.sup.5. For reference, the responsivity was lower than that at the filled circles (•) when illumination was from the LEDs with higher output than the Xe lamp light source, which demonstrated that the rejection ratio was at least 10.sup.5 to 10.sup.6 or more.

Example 2

[0101] An ultraviolet light receiving device with a photosensitivity peak wavelength of 320 nm according to Example 2 was fabricated under the following epitaxial growth conditions. An undoped AlN (0001) layer was grown to 800 nm on a c-plane sapphire substrate. Next, an undoped Al.sub.0.70Ga.sub.0.30N layer was grown to 1000 nm. Subsequently, a Si-doped n-type Al.sub.0.68Ga.sub.0.32N layer was grown to 500 nm, and a Si-doped n-type Al.sub.0.50Ga.sub.0.50N layer for forming ohmic contacts was then gown to 200 nm, and finally an undoped Al.sub.0.20Ga.sub.0.80N layer was grown to 500 nm, thus an epitaxial substrate for a light receiving device was fabricated. When the chemical proportions of the AlGaN layers in the AlGaN laminate are expressed using the composition ratios (w, x, y, and z) as w=0.70, x=0.68, y=0.50, z=0.20. The other growth conditions were the same as those in Example 1.

[0102] Devise processing was performed in the same manner as in Example 1, and the electrical-optical characteristics were evaluated. FIG. 6 illustrates the I-V characteristics in darkness and in the cases of illuminations with light of 320 nm obtained by dispersion of light from the Xe lamp and visible light of 530 nm. FIG. 7A gives the photosensitivity spectrum illustrating the wavelength dependence of the responsivity in the case where the bias voltage was 0 V. FIG. 7A demonstrates that the photosensitivity peak lies at 320 nm. The half width at a bias voltage of 0 V was 18 nm, and the half peak wavelength on the longer wavelength side was 325 nm. Although not illustrated, when the bias voltage was −10 V, the half width was 35 nm, and the half peak wavelength on the longer wavelength side was 335 nm. To present the rejection ratio with respect to visible light, the responsivity is represented in a semi-log graph in FIG. 7B. The filled circles (•) represent the wavelength dependence of the responsivity in the case where light from a Xe lamp light source was dispersed to illuminate the sample and the bias voltage to the light receiving device was 0 V. The results of the responsivities to 455 nm illumination (open triangle), 530 nm illumination (open rhombus), and 630 nm illumination (open square) using LEDs as light sources are added to FIG. 7B. The illumination power of the LED light sources and the spectrometer light source was the same as that in Example 1.

[0103] The responsivity Rp to the photosensitivity peak wavelength at the filled circle (•) at a bias voltage of 0 V found using the spectrometer light source was 21.4 mA/W, and the average Rv of the responsivity to a visible region of 400 nm or more to 680 nm or less was 1.29×10.sup.−4 mA/W. A calculation using these values resulted in a rejection ratio (Rp/Rv) of 1.66×10.sup.5 that was a rejection ratio not lower than 10.sup.5. For reference, the responsivity was lower than that at the filled circles (•) when illumination was from the LEDs with higher output than the Xe lamp light source, thus the rejection ratio was at least 10.sup.5 to 10.sup.6 or more.

Example 3

[0104] An ultraviolet light receiving device with a photosensitivity peak wavelength of 230 nm according to Example 3 was fabricated under the following epitaxial growth conditions. Undoped AlN (0001) was grown to 800 nm on a c-plane sapphire substrate. Next, an undoped Al.sub.0.95Ga.sub.0.05N layer was grown to 1000 nm. Subsequently, a Si-doped n-type Al.sub.0.88Ga.sub.0.12N layer was grown to 500 nm, and a Si-doped n-type Al.sub.0.80Ga.sub.0.20N layer for forming ohmic contacts was then gown to 200 nm, and finally an undoped Al.sub.0.75Ga.sub.0.25N layer was grown to 300 nm, thus an epitaxial substrate for a light receiving device was fabricated. When the chemical proportions of the AlGaN layers in the AlGaN laminate are expressed using the composition ratios (w, x, y, and z) as w=0.95, x=0.88, y=0.80, z=0.75. The other growth conditions were the same as those in Example 1.

[0105] Devise processing was performed in the same manner as in Example 1, and the electrical-optical characteristics were evaluated. FIG. 8 illustrates the I-V characteristics in darkness and in the cases of illuminations with light of 230 nm obtained by dispersion of light from the Xe lamp and light of 530 nm. FIG. 9A gives the photosensitivity spectrum illustrating the wavelength dependence of the responsivity in the case where the bias voltage was 0 V. FIG. 9A demonstrates that the photosensitivity peak lies at 230 nm. In this case, the half width was 18 nm, and the half peak wavelength on the shorter wavelength side was 216 nm. To present the rejection ratio with respect to visible light, the responsivity is represented in a semi-log graph in FIG. 9B. The filled circles (•) represent the wavelength dependence of the responsivity in the case where light from a Xe lamp light source was dispersed to illuminate the sample and the bias voltage to the light receiving device was 0 V. The results of the responsivities to 455 nm illumination (open triangle), 530 nm illumination (open rhombus), and 630 nm illumination (open square) using LEDs as light sources are added to FIG. 9B. The illumination power of the LED light sources and the spectrometer light source was the same as that in Example 1.

[0106] The responsivity Rp to the photosensitivity peak wavelength at the filled circle (•) at a bias voltage of 0 V found using the spectrometer light source was 14.8 mA/W, and the average Rv of the responsivity to a visible region of 400 nm or more to 680 nm or less was 1.37×10.sup.−4 mA/W. A calculation using these values resulted in a rejection ratio (Rp/Rv) of 1.08×10.sup.5 that was a rejection ratio not lower than 10.sup.5. For reference, the responsivity was lower than that at the filled circles (•) when illumination was from the LEDs with higher output than the Xe lamp light source, thus the rejection ratio was at least 10.sup.5 to 10.sup.6 or more.

Comparative Example 1

[0107] The specific ultraviolet wavelengths light receiving device S12742-254 manufactured by HAMAMATSU PHOTONICS K.K., in which an ultraviolet light band-pass filter is attached to a Si light receiving device has photosensitivity corresponding to germicidal rays (254 nm) from a mercury lamp. This being the case, the I-V characteristics in darkness and in the cases of illuminations with light of 254 nm obtained by dispersion of light from the Xe lamp and visible light of a range of 400 nm to 680 nm using the device were measured. FIG. 10 gives the measurement results. The dark current was at a level close to the detection limit for the evaluation system; however, a considerable amount of photocurrent flows during visible light illumination (400 nm to 680 nm), and differed from the current value during 254 nm illumination by only approximately two orders of magnitude. FIG. 11 presents the wavelength dependence of the responsivity, and the rejection ratio with respect to visible light was in the middle on the order of 10.sup.2 (at least more than 10.sup.2 and less than 10.sup.3). The photosensitivity peak was 254 nm, and the half width was 13 nm.

Comparative Example 2

[0108] In Examples 1 to 3, the illumination was performed from the sapphire substrate side, whereas illumination was performed from the light receiving layer surface side using the light receiving device used in Examples and the electrical-optical characteristics were evaluated in Comparative Examples 2-1 to 2-3 below.

Comparative Example 2-1

[0109] In Comparative Example 2-1, illumination was performed on the device having photosensitivity to 260 nm in Example 1 from the light receiving layer surface side. FIG. 12A is a line graph of the wavelength dependence of the responsivity when illumination was performed through the Schottky electrode on the light receiving layer side, illustrating a case where the bias voltage was 0 V. The half width of the responsivity was 60 mm, and the device had photosensitivity that extends over wavelengths shorter than that of the photosensitivity peak and had an asymmetric spectral shape. FIG. 12B is a semi-log graph of the responsivity for presenting the rejection ratio with respect to visible light.

[0110] The responsivity Rp to the photosensitivity peak wavelength at the filled circle (•) at a bias voltage of 0 V was 2.37 mA/W, and the average Rv of the responsivity to a visible region of 400 nm or more to 680 nm or less was 1.29×10.sup.−4 mA/W, and the rejection ratio (Rp/Rv) calculated was 1.84×10.sup.4 that was a rejection ratio of less than 10.sup.5.

Comparative Example 2-2

[0111] In Comparative Example 2-2, the device having the photosensitivity peak at 320 nm, used in Example 2 was subjected to illumination from the light receiving layer side through the Schottky electrode. FIG. 13A is a line graph of the wavelength dependence of the responsivity, illustrating a case where the bias voltage was 0 V, and the half width of the photosensitivity was 67 nm. Also in this case, the sensitivity greatly extends over wavelengths shorter than the photosensitivity peak wavelength and had an asymmetric spectral shape. FIG. 13B is a semi-log graph of the responsivity for presenting the rejection ratio with respect to visible light.

[0112] The responsivity Rp to the photosensitivity peak wavelength at the filled circle (•) at a bias voltage of 0 V was 13.7 mA/W, and the average Rv of the responsivity to a visible region of 400 nm or more to 680 nm or less was 2.20×10.sup.−4 mA/W, and the rejection ratio (Rp/Rv) calculated was 6.23×10.sup.4 that was a rejection ratio of less than 10.sup.5.

Comparative Example 2-3

[0113] In Comparative Example 2-3, the device having the photosensitivity peak at 230 nm, used in Example 3 was subjected to illumination from the light receiving layer side through the Schottky electrode. FIG. 14A is a line graph of the wavelength dependence of the responsivity, illustrating a case where the bias voltage was 0 V. For wavelengths less than 200 nm, the responsivity could not be determined because the illumination power was out of the measurement range; however, since the half peak wavelength on the longer wavelength side was 245 nm, the half width was fully found to have been at least more than 50 nm. Also in this case, the sensitivity greatly extends over wavelengths shorter than the photosensitivity peak wavelength and had an asymmetric spectral shape. FIG. 14B is a semi-log graph of the responsivity for presenting the rejection ratio with respect to visible light.

[0114] The responsivity Rp to the photosensitivity peak wavelength at the filled circle (•) at a bias voltage of 0 V was 4.35 mA/W, and the average Rv of the responsivity to a visible region of 400 nm or more to 680 nm or less was 1.25×10.sup.−4 mA/W, and the rejection ratio (Rp/Rv) calculated was 3.84×10.sup.4 that was a rejection ratio of less than 10.sup.5.

[0115] The measurement results of Examples 1 to 3 and Comparative Examples 2-1 to 2-3 above are summarized in Table 1.

TABLE-US-00001 TABLE 1 Responsivity Average Rp to Rv of photosensitivity responsivity Peak Half peak to visible Rejection wavelength width wavelength region ratio (mn) (nm) (mA/W) (mA/W) (Rp/Rv) Example 1 260 20 25.8  1.48 × 10.sup.−4 1.74 × 10.sup.5 Example 2 320 18 21.4  1.29 × 10.sup.−4 1.66 × 10.sup.5 Example 3 230 18 14.8  1.37 × 10.sup.−4 1.08 × 10.sup.5 Comparative Example 2-1 260 60  2.37 1.29 × 10.sup.−4 1.84 × 10.sup.4 Comparative Example 2-2 320 67 13.7  2.20 × 10.sup.−4 6.23 × 10.sup.4 Comparative Example 2-3 230 >50   4.35 1.25 × 10.sup.−4 3.84 × 10.sup.4

[0116] Table 1 above demonstrates that when illumination is performed from the sapphire substrate side using an AlGaN laminate according to the embodiments of this disclosure, a rejection ratio of 10.sup.5 or higher with respect to the responsivity to the visible region can be obtained, and light of specific wavelengths with a half width of 40 nm or less can exclusively be detected.

INDUSTRIAL APPLICABILITY

[0117] An ultraviolet light receiving device according to this disclosure can exclusively detect light of the target ultraviolet wavelengths without being disturbed by visible light or near ultraviolet light. An ultraviolet light receiving device that exclusively detects light of those specific wavelengths can be used in pair with a light emitting device for disinfection applications, medical applications, analysis applications, etc. in output monitors and feedback control, and thus are very useful.

REFERENCE SIGNS LIST

[0118] 11: Sapphire substrate [0119] 12: MN layer [0120] 13: Al.sub.wGa.sub.1-wN buffer layer [0121] 14: n-type Al.sub.xGa.sub.1-xN current spreading layer [0122] 15: n-type Al.sub.yGa.sub.1-yN ohmic contact layer [0123] 16: Al.sub.zGa.sub.1-zN light receiving layer [0124] 20: Isolation groove [0125] 21: n-type electrode [0126] 23: Schottky electrode