SYNTHESIS OF MXENE SUSPENSIONS WITH IMPROVED STABILITY
20230038015 · 2023-02-09
Inventors
- Tyler S. MATHIS (Philadelphia, PA, US)
- Yury GOGOTSI (Ivyland, PA, US)
- Kathleen MALESKI (Mount Airy, MD, US)
Cpc classification
C01B32/907
CHEMISTRY; METALLURGY
C01P2002/74
CHEMISTRY; METALLURGY
C01B21/06
CHEMISTRY; METALLURGY
C01P2002/72
CHEMISTRY; METALLURGY
C01P2004/24
CHEMISTRY; METALLURGY
H01B1/04
ELECTRICITY
C01P2002/88
CHEMISTRY; METALLURGY
International classification
Abstract
Provided are enhanced MXene materials made from MAX-phase precursors that comprise an excess of metal A. The resultant enhanced MXenes exhibit improved stability over periods of days and months, particularly when stored in aqueous media.
Claims
1. A composition having enhanced storage stability, comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M, wherein M is at least one Group IIIB, IVB, VB, or VIB metal, wherein each X is C, N, or a combination thereof; n=1, 2, 3, or 4, wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and (a) wherein, following storage in degassed deionized water at 25 deg. C. for 4 months, stored composition exhibits an essentially unchanged UV-vis spectra between 200 and 1000 nm as compared to comparable composition that has not been stored, (b) wherein, following storage in degassed deionized water at 25 deg. C. for 4 months, a film formed from stored composition exhibits a conductivity between about 10,000 and 15,000 S/cm, (c) wherein, following storage in degassed deionized water at 25 deg. C. for 4 months, stored composition exhibits an essentially unchanged XPS spectra from a survey scan of the 2p region of M, or any combination of (a), (b), (c).
2. The composition of claim 1, wherein M is at least one Group IVB, Group VB, or Group VIB metal.
3. The composition of claim 1, wherein M is Ti, and n is 1 or 2.
4. The composition of claim 1, wherein M.sub.n+1A.sub.n comprises Sc.sub.2C, Sc.sub.2N, Ti.sub.2C, Ti.sub.2N, V.sub.2C, V.sub.2N, Cr.sub.2C, Cr.sub.2N, Zr, Zr.sub.2N, Nb.sub.2C, Nb.sub.2N, Hf.sub.2C, Hf.sub.2N, Ti.sub.3C.sub.2, Ti.sub.3N.sub.2, V.sub.3C.sub.2, Ta.sub.3C.sub.2, Ta.sub.3N.sub.2, Ti.sub.4C.sub.3, Ti.sub.4N.sub.3, V.sub.4C.sub.3, V.sub.4N.sub.3, Ta.sub.4C.sub.3, Ta.sub.4N.sub.3, or a combination thereof.
5. The composition of claim 1, wherein M.sub.n+1X.sub.n comprises Ti.sub.3C.sub.2, Ti.sub.3CN, Ti.sub.2C, Ta.sub.4C.sub.3 or (V.sub.1/2Cr.sub.1/2).sub.3C.sub.2.
6. The composition of claim 1 wherein M is Ta, and n is 2 or 3.
7. The composition of claim 1, the crystal cells having an empirical formula Ti.sub.3C.sub.2 or Ti.sub.2C and wherein at least one of said surfaces of each layer has surface terminations comprising hydroxide, oxide, sub-oxide, or a combination thereof.
8. The composition of claim 1, wherein the composition comprises an electrically conductive or semiconductive surface.
9. The composition of claim 1, wherein M is at least one of Sc, Y, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.
10. A device, comprising a composition according to claim 1.
11. A method, comprising fabricating a composition according to claim 1.
12. A method of preparing a composition, comprising: removing substantially all of the A atoms from a MAX-phase composition having an empirical formula of M.sub.n+1AX.sub.n and comprising an excess of at least one of A, M, and/or X, wherein M is at least one Group TlM, IVB, VB, or VIB metal, wherein A is an A-group element, each X is C, N, or a combination thereof, and n=1, 2, 3, or 4; thereby providing a composition comprising at least one layer having a first and second surface, each layer comprising a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M, and wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof.
13. The method of claim 12, wherein the A atoms are removed by a process comprising a treatment with a fluorine-containing acid.
14. The method of claim 13, wherein the fluorine-containing acid is aqueous hydrofluoric acid.
15. The method of claim 12, further comprising sonication.
16. The method of claim 12, wherein the MAX-phase composition comprises an excess of A, and optionally wherein the MAX-phase material contains essentially stoichiometric amounts of M and X.
17. The method of claim 12, wherein removing substantially all of the A atoms from a MAX-phase composition is done electrochemically.
18. A method, comprising: (A) with a MAX-phase composition having an empirical formula of M.sub.n+1AX.sub.n and comprising an amount of MA intermetallic impurities, the MAX-phase composition optionally being formed from thermal treatment of an about 2:1:1 mass ratio of MX, M, and A particulate, removing substantially all of the A atoms from the MAX-phase composition, and removing substantially all of the intermetallic impurities from the MAX-phase composition, or (B) combining amounts of a metal M, a composition MX, and a metal A to form a mixture, the mixture (a) comprising an amount of the metal A that is in excess of the amount needed to make a stoichiometric amount of a MAX-phase material formed from M, MX, and A, (a) comprising an amount of the composition MX that is in excess of the amount needed to make a stoichiometric amount of a MAX-phase material formed from M, MX, and A, (c) comprising an amount of the metal M that is in excess of the amount needed to make a stoichiometric amount of a MAX-phase material formed from M, MX, and A, or any combination of (a), (b), and (c), treating the mixture so as to give rise to a MAX-phase material, optionally removing substantially all of the A atoms from the MAX-phase composition, and optionally removing substantially all of the intermetallic impurities from the MAX-phase composition.
19. (canceled)
20. A composition having enhanced storage stability, comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M, wherein M is at least one Group TlM, IVB, VB, or VIB metal, wherein each X is C, N, or a combination thereof; n=1, 2, 3, or 4, wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and wherein, said composition is formed from removing essentially all of metal A from a MAX-phase material comprising metal M, element X, and an excess of metal A.
21. The composition of claim 20, wherein the composition, when heated in air, exhibits an onset of weight gain at a higher temperature than a comparable composition formed from removing essentially all of metal A from a MAX-phase material comprising stoichiometric amounts of metal M, element X, and metal A.
22. The composition of claim 20, wherein the composition, when heated in air, achieves a weight gain of a given percentage at a temperature higher than a temperature at which a comparable composition formed from removing essentially all of metal A from a MAX-phase material comprising stoichiometric amounts of metal M, element X, and metal A achieves the weight gain of the given percentage.
23. A composition having enhanced storage stability, comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M, wherein M is at least one Group TlM, IVB, VB, or VIB metal, wherein each X is C, N, or a combination thereof; n=1, 2, 3, or 4, and wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and (a) wherein the composition has a molar ratio of M:X in the range of from (n+1):0.95n to n+1:1.05n, (b) wherein the composition exhibits an essentially an essentially unchanged UV-vis spectrum between 200 and 1000 nm after storage in water at room temperature for 30 days, (c) wherein the composition exhibits an essentially an essentially absorbance at a given wavelength between 200 and 1000 nm after storage in water at room temperature for 30 days, (d) wherein the composition exhibits an essentially an essentially unchanged Raman spectrum between 200 and 1000 nm after storage in water at room temperature for 30 days, (e) wherein the composition comprises a plurality of flakes and wherein after storage in water at room temperature for 300 days, (1) the flakes are essentially crack-free, (2) the flakes are essentially free of metal oxide crystals formed of M, or both (1) and (2), or any combination of (a), (b), (c), (d), and (e).
24. The composition of claim 23, wherein the composition has a molar ratio of M:X in the range of from (n+1):0.98n to n+1:1.02n.
25. The composition of claim 24, wherein the composition exhibits a molar ratio of M:X in the range of from (n+1):0.995n to n+1:1.005n.
26. The composition of claim 25, wherein the composition exhibits an empirical ratio of M:X of (n+1):1n.
27. (canceled)
Description
BRIEF DESCRIPTlON OF THE DRAWINGS
[0042] The following figures are presented as illustrative examples, and should not be considered to limit the scope of the invention in any way. Except where otherwise noted, the scales of the figures may be exaggerated for illustrative purposes.
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DETAILED DESCRIPTlON OF ILLUSTRATlVE EMBODIMENTS
[0077] The present disclosure may be understood more readily by reference to the following detailed description taken in connection with the accompanying figures and examples, which form a part of this disclosure. It is to be understood that this invention is not limited to the specific devices, methods, applications, conditions or parameters described and/or shown herein, and that the terminology used herein is for the purpose of describing particular embodiments by way of example only and is not intended to be limiting of the claimed invention.
[0078] Also, as used in the specification including the appended claims, the singular forms “a,” “an,” and “the” include the plural, and reference to a particular numerical value includes at least that particular value, unless the context clearly dictates otherwise. The term “plurality”, as used herein, means more than one. When a range of values is expressed, another embodiment includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent “about,” it will be understood that the particular value forms another embodiment. All ranges are inclusive and combinable, and it should be understood that steps may be performed in any order.
[0079] It is to be appreciated that certain features of the invention which are, for clarity, described herein in the context of separate embodiments. may also be provided in combination in a single embodiment. Conversely, various features of the invention that are, for brevity, described in the context of a single embodiment, may also be provided separately or in any subcombination. All documents cited herein are incorporated herein in their entireties for any and all purposes.
[0080] Further, reference to values stated in ranges include each and every value within that range. In addition, the term “comprising” should be understood as having its standard, open-ended meaning, but also as encompassing “consisting” as well. For example, a device that comprises Part A and Part B may include parts in addition to Part A and Part B, but may also be formed only from Part A and Part B.
[0081] MXenes
[0082] Since the discovery of 2D titanium carbide (Ti.sub.3C.sub.2T.sub.z) MXene, additional MXenes have been discovered so far and more are being routinely discovered. Owing to their chemical diversity, hydrophilicity, 2D morphology and metallic conductivity MXenes have shown promise in various applications like energy storage, catalysts for hydrogen evolution reactions, gas sensing, water desalination, reinforcement in polymer composites, EMI shielding, and many more.
[0083] MXenes have a general formula M.sub.n+1X.sub.nT.sub.z and are so called because they are derived by etching the A atomic layers from the parent MAX (M.sub.n+1AX.sub.n) phase, where M stands for an early transition metal, A can be (generally) a group 13 or 14 element, and X stands for C and/or N. The -ene suffix was added to make the connection to other 2D materials, like graphene, silicene, etc. The T.sub.z in the chemical formula stands for the various —O, —OH, —F surface terminations that replace the Al layers upon etching.
[0084] MAX phase compositions are generally recognized as comprising layered, hexagonal carbides and nitrides have the general formula: M.sub.n+1AX.sub.n, (MAX) where n=1 to 4, in which M is typically described as an early transition metal (comprising a Group IIIB, IVB, VB, or VIB metal, or Mn), A is described as an A-group (mostly IIIA and IVA, or groups 13 and 14) element and X is either carbon and/or nitrogen. See, e.g., M. W. Barsoum, et al., “Synthesis and Characterization of a Remarkable Ceramic: Ti.sub.3SiC.sub.2,” J Amer. Ceramics. Soc., 79, 1953-1956 (1996); M. W. Barsoum, “The M.sub.N+1AX.sub.N Phases: A New Class of Solids: Thermodynamically Stable Nanolaminates,” Progress in Solid State Chemistry, 28, 201-281 (2000), both of which are incorporated by reference herein. While Ti.sub.3AlC.sub.2 is among the most widely studied of these materials, more than 60 MAX phases are currently known to exist and are useful in the present invention. While not intending to be limiting, representative examples of MAX phase materials useful in the present invention include: (211) Ti.sub.2CdC, Sc.sub.2InC, Ti.sub.2AlC, Ti.sub.2GaC, Ti.sub.2InC, Ti.sub.2TlC, V.sub.2AlC, V.sub.2GaC, Cr.sub.2GaC, Ti.sub.2AlN, Ti.sub.2GaN, Ti.sub.2InN, V.sub.2GaN, Cr.sub.2GaN, Ti.sub.2GeC, Ti.sub.2SnC, Ti.sub.2PbC, V.sub.2GeC, Cr.sub.2AlC, Cr.sub.2GeC, V.sub.2PC, V.sub.2AsC, Ti.sub.2SC, Zr.sub.2InC, Zr.sub.2TlC, Nb.sub.2AlC, Nb.sub.2GaC, Nb.sub.2InC, Mo.sub.2GaC, Zr.sub.2InN, Zr.sub.2TlN, Zr.sub.2SnC, Zr.sub.2PbC, Nb.sub.2SnC, Nb.sub.2PC, Nb.sub.2AsC, Zr.sub.2SC, Nb.sub.2SC, Hf.sub.2InC, Hf.sub.2TlC, Ta.sub.2AlC, Ta.sub.2GaC, Hf.sub.2SnC, Hf.sub.2PbC, Hf.sub.2SnN, Hf.sub.2SC; (312) Ti.sub.3AlC.sub.2, V.sub.3AlC.sub.2, Ti.sub.3SiC.sub.2, Ti.sub.3GeC.sub.2, Ti.sub.3SnC.sub.2, Ta.sub.3AlC.sub.2, and (413) Ti.sub.4AlN.sub.3, V.sub.4AlC.sub.3, Ti.sub.4GaC.sub.3, Ti.sub.4SiC.sub.3, Ti.sub.4GeC.sub.3, Nb.sub.4AlC.sub.3, and Ta.sub.4AlC.sub.3. Solid solutions of these materials can also be used as described herein (e.g., see Example 4).
[0085] Although the instant disclosure describes the use of Ti.sub.3C.sub.2-type MXene because of the convenient ability to prepare larger scale quantities of this material, other MXene compositions are within the scope of this disclosure, e.g., MXene compositions of any of U.S. patent application Ser. No. 14/094,966 (filed Dec. 3, 2013); 62/055,155 (filed Sep. 25, 2014); 62/214,380 (filed Sep. 4, 2015); 62/149,890 (filed Apr. 20, 2015); 62/127,907 (filed Mar. 4, 2015); or International Applications PCT/US2012/043273 (filed Jun. 20, 2012); PCT/US2013/072733 (filed Dec. 3, 2013); PCT/US2015/051588 (filed Sep. 23, 2015); PCT/US2016/020216 (filed Mar. 1, 2016); PCT/US2016/028,354 (filed Apr. 20, 2016), PCT/US2020/054912 (filed Oct. 9, 2020), preferably where the MXene composition comprises titanium and carbon (e.g., Ti.sub.3C.sub.2, Ti.sub.2C, Mo.sub.2TiC.sub.2, etc.). Each of the foregoing is incorporated herein by reference in its entirety for any and all purposes.
[0086] Results
[0087] Following sintering of the precursor powders containing excess aluminum, the resulting block of 2.2-Ti.sub.3AlC.sub.2 MAX phase contains intermetallic impurities, namely in the form of TiAl.sub.3, as seen in the X-ray diffraction (XRD) patterns of the as produced MAX (
[0088] During neutralization of the acid washed Ti.sub.3AlC.sub.2 (referred to as H—Ti.sub.3AlC.sub.2) the acidic supernatant is a deep purple color (
[0089] Etching the H—Ti.sub.3AlC.sub.2 MAX using a mixture of hydrofluoric and hydrochloric acids (HF/HCl etching) and then delaminating the resulting Ti.sub.3C.sub.2 by stirring the etched Ti.sub.3C.sub.2 in an aqueous solution of LiCl results in the production of high-yield, single flake Ti.sub.3C.sub.2 suspensions (
[0090] The quantity and concentration of the single flake Ti.sub.3C.sub.2 solutions produced during each cycle of the delamination process is dependent on the quantity of MAX that was etched and the size of the centrifuge tubes used during delamination (
[0091] One of the most notable properties of MXenes, and Ti.sub.3C.sub.2 in particular, is the high electronic conductivity of films produced from solutions of single layer MXene flakes. Freestanding films made by vacuum filtering the Ti.sub.3C.sub.2 solutions produced by etching the H—Ti.sub.3AlC.sub.2 using the HF/HCl etchant have conductivities ranging from slightly higher than 10,000 S/cm up to values exceeding 20,000 S/cm (
[0092] The conductivity of the Ti.sub.3C.sub.2 films is slightly dependent on the quantity of water used to wash the Ti.sub.3C.sub.2 during the delamination process. Without being bound to any particular theory, because the concentration of the delaminated Ti.sub.3C.sub.2 solutions is also dependent on the wash cycle it is likely that the highest quality flakes are delaminating first leading to the highest quality films. However, in the initial stages of washing there will still be LiCl present in the delaminated solution which may also influence the properties of the final films, but as washing continues the LiCl can be removed (
[0093] The most notable property of the Ti.sub.3C.sub.2 solutions produced from the H—Ti.sub.3AlC.sub.2 MAX is the remarkable shelf life of the solutions. To test the shelf of the Ti.sub.3C.sub.2 solutions we took the minimum amount of precautions to protect the Ti.sub.3C.sub.2 flakes to simulate the most typical laboratory storage conditions. The delaminated Ti.sub.3C.sub.2 solution was degassed by bubbling argon through the solution at the as produced concentration directly after centrifugation before being transferred to a sealed argon filled vial and then stored away from light in a laboratory bench drawer at room temperature. UV-vis measurements recorded periodically during storage show how there are no noticeable changes in the stored sample's spectra up until the 4-month mark (
[0094] However, when a film was made from the solution that was stored for 4 months the conductivity of the resulting film was still over 10,000 S/cm, well within the range of films made directly after delamination, and the film was as flexible and lustrous as would be expected for a film made with fresh Ti.sub.3C.sub.2 (
[0095] After 6 months of storage the UV-vis spectra of the Ti.sub.3C.sub.2 solution still has only a slight red-shift in the ˜780 nm peak, but the conductivity of the film made from the 6 month old solution dropped to just over 6000 S/cm. Films made from the 6 month old solution are still highly flexible, but they are slightly darker in color.
[0096] Raman spectra of the Ti.sub.3C.sub.2 films made from the fresh, 4 month old, and 6 month old solutions are identical and give no indication that serious oxidation has occurred during storage (
[0097] The excess A-element used during the synthesis of the H—Ti.sub.3AlC.sub.2 MAX phase resulted in material with a more uniform composition, as can be seen from the XPS spectra for the Ti 2p region of the H—Ti.sub.3AlC.sub.2 MAX (
[0098] By modifying the synthesis of the parent Ti.sub.3AlC.sub.2 MAX phase to produce a precursor material of higher quality, one can improve the quality of the Ti.sub.3C.sub.2 flakes, thereby improving the shelf life and stability of the MXene.
EXPERIMENTAL
[0099] The following experimental results are illustrative only and do not limit the scope of the present disclosure or of the appended claims.
[0100] Ti.sub.3AlC.sub.2 MAX Synthesis
[0101] A 2:1:1 (mass ratio) mix of TiC, Ti, and Al powders was ball milled using zirconia milling media for 18 h at 70 rpm. 2:1 mass ratio of zirconia balls to precursor powder. The ball milled precursor powders are packed into an alumina crucible and covered with graphite foil before being placed in a tube furnace. After the crucible is placed in the furnace, the tube is purged with argon for 30 min at room temperature. After purging, the precursor powders are sintered at 1380° C. for 2 h with constant flowing argon. The heating and cooling rate are both 3° C./min. The argon flow rate is ˜100 sccm. The sintered block of Ti.sub.3AlC.sub.2 is then milled using a TiN coated milling bit. The milled MAX powder is then washed using 9M HCl. Typically, 500 mL of 9M HCl is sufficient to wash upwards of 50 to 60 g of Ti.sub.3AlC.sub.2. The MAX can be washed until the evolution of gas bubbles from the solution stops, 2 h is an exemplary washing duration.
[0102] The washed MAX is then neutralized by filtering the Ti.sub.3AlC.sub.2/HCl mixture though a vacuum filtration unit followed by repeated filtering of DI water through the Ti.sub.3AlC.sub.2 cake. The neutralized MAX is then dried in a vacuum oven for at least 6 h. The pore size of the filter membrane is 5 μm.
[0103] The dried Ti.sub.3AlC.sub.2 is then sieved through a 450-mesh particle sieve. The washed, dried, and sieved Ti.sub.3AlC.sub.2 is then ready for etching
[0104] Ti.sub.3C.sub.2 MXene Synthesis
[0105] Typically, 1 g of Ti.sub.3AlC.sub.2 is mixed with 20 mL of etchant and stirred at 400 rpm for 24 h at 35° C. The etchant is a 6:3:1 mixture (by volume) of 12 M HCl, DI water, and 50 wt. % HF. For 1 g MAX/20 mL of etchant, a 60 mL HDPE bottle will typically be used as the etching container. The etched Ti.sub.3C.sub.2 is washed DI water via repeated centrifugation and decantation until the supernatant reaches pH ˜6 using a 175 mL centrifuge tube. Once the MXene is neutralized, one more additional wash cycle will be performed to ensure the washing process is complete. 5 wash cycles using a single 175 mL centrifuge tube are typically enough for 1 g of MAX etched using 20 mL of etchant.
[0106] The etched Ti.sub.3C.sub.2 multilayer sediment is then dispersed in a 0.5 M solution of LiCl (typically 50 mL solution/gram of MXene) to start the delamination process. The MXene/LiCl suspension is then stirred at 400 rpm for a minimum of 4 h at room temperature.
[0107] The MXene/LiCl suspension is then washed with DI water via repeated centrifugation and decantation of the supernatant using a 175 mL centrifuge tube. The first wash cycle always sediments completely after 3 to 5 minutes of centrifugation at 3500 rpm. The 2nd wash and onwards are centrifuged for 1 h at 3500 rpm before the Ti.sub.3C.sub.2 supernatants are collected to ensure the MXene solutions are single flake.
[0108] Physical Characterization
[0109] Conductivity measurements were performed using a four-point probe with X mm separation (Jandel) on free standing Ti.sub.3C.sub.2 films made by vacuum filtering delaminated single flake Ti.sub.3C.sub.2 solutions. The measured sheet resistance of the Ti.sub.3C.sub.2 films was converted into conductivity by using the thickness of the films taken from SEM images of the film cross sections. UV-vis spectra were recorded using a X spectrometer, where the absorbance was measured for samples at 100× dilution.
[0110] For the long-term storage tests solutions from the 4th wash (700 mL) were used since the excess LiCl would have been removed by that cycle. The concentrations of the stored Ti.sub.3C.sub.2 samples were calculated by measuring the absorbance changes of the samples over time versus the absorbance of the Ti.sub.3C.sub.2 samples at the initial time of storage. Raman spectra were recorded using a Renishaw in Via spectrometer.
[0111] Additional Disclosure and Results
[0112] Al—Ti.sub.3AlC.sub.2 MAX was produced by pressureless sintering of a non-stochiometric mixture of TiC, Ti, and Al powders that contained excess Al (see Experimental Methods section). The as-produced MAX contains intermetallic compounds—namely in the form of TiAl.sub.3—as seen in the X-ray diffraction (XRD) pattern of Al—Ti.sub.3AlC.sub.2 (
[0113] To better understand how the excess aluminum affects the composition and bonding within the MAX, we further compared the Al—Ti.sub.3AlC.sub.2 with conventional Ti.sub.3AlC.sub.2 using Raman spectroscopy. The Raman spectra of Al—Ti.sub.3AlC.sub.2 (red, not acid washed) and conventional Ti.sub.3AlC.sub.2 (green, not acid washed) show the presence of TiC in both samples, along with the MAX phase Ti.sub.3AlC.sub.2 (
[0114] It is worth noting that this is the only observable vibration that involves Al atoms. The broadening and diminishing of this peak in Al—Ti.sub.3AlC.sub.2 suggests some structural changes in the Al layer. The out-of-plane peaks—A.sub.1g symmetric and asymmetric—are present in both spectra. However, in the case of Al—Ti.sub.3AlC.sub.2, the symmetric peak shifted slightly from 270 to 274 cm.sup.−1 and the asymmetric peak shifted from 659 to 661 cm.sup.−1. The positions of the corresponding peaks in Ti.sub.3C.sub.2 are located at 200 and 723 cm.sup.−1, respectively. The 300-500 cm.sup.−1 region has previously been attributed to impurities, but the exact origin of these peaks has yet to be determined. There is also an additional peak at approximately 549 cm.sup.−1 which is present only together with the Ti.sub.3AlC.sub.2, which suggests that the MAX phase is the origin of this peak. The acid washed Al—Ti.sub.3AlC.sub.2 MAX also has well-shaped, hexagonal grains. This may be the result of enhanced diffusion of the reactants during the sintering process caused by the presence of molten aluminum (
[0115] We etched the HCl washed Al—Ti.sub.3AlC.sub.2 using a mixture of hydrofluoric and hydrochloric acids (HF/HCl etching) and then delaminated the MXene by stirring the etched Al—Ti.sub.3C.sub.2 in an aqueous solution of LiCl.
[0116] This procedure yields suspensions of delaminated Al—Ti.sub.3C.sub.2 flakes that largely retain the shape of the starting Al—Ti.sub.3AlC.sub.2 MAX particles (
[0117] One of the characteristic properties of MXenes, and Ti.sub.3C.sub.2 in particular, is the high electronic conductivity of films produced from solutions of single- or few-layer MXene flakes. Freestanding films made by vacuum filtering Al—Ti.sub.3C.sub.2 solutions have conductivities ranging from slightly higher than 10,000 S/cm up to values exceeding 20,000 S/cm (
[0118] The conductivity of the Al—Ti.sub.3C.sub.2 films varies slightly depending on the quantity of water used during the delamination process (
[0119] Thermogravimetric analysis (TGA) of delaminated film and multilayer powder Ti.sub.3C.sub.2 samples conducted in air shows that Al—Ti.sub.3C.sub.2 has significantly improved oxidation stability versus Ti.sub.3C.sub.2 produced from conventional Ti.sub.3AlC.sub.2 (
[0120] Weight gain due to oxidation begins at ˜150° C. higher for the delaminated Al—Ti.sub.3C.sub.2 versus the conventional Ti.sub.3C.sub.2. Oxidation of the Al—Ti.sub.3C.sub.2 multilayer powder, where the flake edges are exposed and no continuous protective oxide can form, occurs at a much slower rate than the conventional Ti.sub.3C.sub.2, indicating that the oxidation stability of solid films and powders of Al—Ti.sub.3C.sub.2 is improved in air. Moreover, the high-temperature resistance of the delaminated Al—Ti.sub.3C.sub.2 in air is improved by approximately 200° C. over literature reports, up to over 450° C. This characteristic thus expands the use of MXenes to applications requiring operation at elevated temperatures in air, such as sensors or electronics operating near hot engines or electrical components.
[0121] A notable property of the Al—Ti.sub.3C.sub.2 produced from HCl-washed Ti.sub.3AlC.sub.2 MAX is its remarkable shelf life as an aqueous colloidal suspension. To test the long-term stability of the Al—Ti.sub.3C.sub.2 solutions, we took the minimum amount of precautions to protect the Al—Ti.sub.3C.sub.2 flakes, as to simulate the most typical laboratory storage conditions. Delaminated Al—Ti.sub.3C.sub.2 solutions were degassed by bubbling argon through the solutions at the as-produced concentration directly after centrifugation before the solutions were transferred to sealed, argon-filled vials and then stored away from light in a laboratory bench drawer at room temperature. This is a common way of preparing colloidal solutions for shipment or storage that requires no specialized equipment, deep refrigeration, or stabilizing additives.
[0122] Changes in the suspension's absorbance over time based on UV-Vis measurements recorded periodically during the storage period show that the concentration of the suspension remains relatively unchanged (
[0123] When a film was made from the solution that was stored for 4 months, the conductivity was still over 10,000 S/cm, well within the range of measurements made from films directly after delamination (
[0124] Comparison of TEM images of fresh Al—Ti.sub.3C.sub.2 flakes and Al—Ti.sub.3C.sub.2 flakes stored for 10 months exhibit remarkably few pinholes (commonly observed in samples stored for extended periods (
[0125] Conventionally, aqueous solutions of Ti.sub.3C.sub.2 will be completely oxidized after just a few weeks of storage in ambient conditions. In contrast, the shelf life of Al—Ti.sub.3C.sub.2 solutions can be for months or years; one can also store samples at temperatures near or below freezing to slow oxidation or by concentrating the Al—Ti.sub.3C.sub.2 solutions to concentrations of tens or even hundreds of mg/mL by high speed centrifugation to reduce the total amount of water in the solutions.
[0126] Recent results show that freezing Ti.sub.3C.sub.2 solutions allows for storage for multiple years. But with the disclosed technology, one can achieve similar results under ambient conditions with Al—Ti.sub.3C.sub.2. These results are evidence that the improved oxidation stability of Al—Ti.sub.3C.sub.2 may be likely due to a reduction in the number of defects in the MAX synthesized with excess aluminum, which would then result in MXene flakes that are less defective and have improved Ti:C stoichiometry (
[0127] It has been reported that Al monovacancies (V.sub.Al), Al divacancies (2V.sub.Al-Al), and divacancies composed of Al and C atoms (2V.sub.Al-C) are the most easily formed vacancies in Ti.sub.3AlC.sub.2. Therefore, the presence of excess aluminum may (without being bound to any particular theory) play a role in minimizing carbon vacancies and reduce the associated loss of Ti atoms near carbon vacancies after etching, leading to Ti.sub.3C.sub.2 flakes with fewer defects. In any event, yen without a complete understanding of the exact origin of the dramatic improvement in the stability of Al—Ti.sub.3C.sub.2, the results presented in the present disclosure establish the formation of highly stable MXenes.
[0128] In prior work, researchers selecting MAX phase precursors for MXene synthesis were solely concerned with the phase purity of the MAX. Our results show that the optimization of MAX phase synthesis should aim to improve the properties of the resulting MXenes. As of now, the crystallinity and M:X stoichiometric ratio of the MAX appear to be noteworthy considerations.
[0129] Non-Limiting Conclusions
[0130] By modifying the synthesis of Ti.sub.3AlC.sub.2 to produce a more stoichiometric MAX phase with improved structure, we have significantly improved the quality of the resulting Ti.sub.3C.sub.2 MXene flakes, thereby markedly improving the shelf life and stability of the MXene. Doing so significantly improves both the commercial viability of MXenes and the ease with which MXenes can be studied. Storage of the improved Ti.sub.3C.sub.2 in closed vials at room temperature for 10 months with minimal degradation has been demonstrated. Additionally, the improved flake quality resulted in MXene films with higher electronic conductivity, approaching 20,000 S/cm—the highest value reported for any solution processable 2D material reported thus far. The oxidation stability of the MXene in air was also significantly improved, increasing the onset of oxidation by ˜150° C. We anticipate that this new methodology will be used as a guide to improve the oxidation stability and electronic conductivity of a large variety of carbide MXenes.
[0131] Experimental Methods
[0132] Al—Ti.sub.3AlC.sub.2 MAX Synthesis
[0133] TiC (Alfa Aesar, 99.5%, 2 micron powder), Ti (Alfa Aesar, 99.5%, 325 mesh), and Al (Alfa Aesar, 99.5%, 325 mesh) powders were mixed in a 2:1.25:2.2 molar ratio and then ball milled using yttria stabilized zirconia milling media (Inframat Advanced Materials, 12 mm diameter) for 18 h continuously at 70 rpm in high density polyethylene bottles. A 2:1 mass ratio of zirconia milling media to precursor powder mixture was used. Upwards of 100 g of precursor powder was ball milled in 250 mL bottles, for smaller bottles were used for smaller batches. The precursor powder was not sieved after being ball milled. The only observable differences in XRD patterns of the precursor mixtures for the standard aluminum content Ti.sub.3AlC.sub.2 and the high aluminum Ti.sub.3AlC.sub.2 following ball milling was an increased intensity of the peaks of the aluminum metal in the high Al content precursor mixture, no new phases or alloying was observed (
[0134] The ball milled precursor powder was then packed into an alumina crucible and covered with graphite foil and placed into a tube furnace. The furnace was purged with argon for 30 min at room temperature. After purging, the precursor powders were heated to 1380° C. and held for 2 h under a constant argon flow at ˜100 sccm. The heating and cooling rates were both 3° C./min.
[0135] The sintered block of Al—Ti.sub.3AlC.sub.2 was then milled using a TiN coated milling bit to produce MAX powder which was subsequently washed using 9 M HCl (Fisher Scientific, USA). Typically, 500 mL of 9 M HCl is sufficient to wash upwards of 50 to 60 g of Al—Ti.sub.3AlC.sub.2. The MAX was washed until the evolution of gas bubbles from the solution stopped.
[0136] Acid washing of the Al—Ti.sub.3AlC.sub.2 MAX can result in ca. 20-30% loss of mass (
[0137] Ti.sub.3AlC.sub.2 MAX Synthesis
[0138] Conventional Ti.sub.3AlC.sub.2 was prepared, synthesized, and acid washed using the same procedure as the Al—Ti.sub.3AlC.sub.2, however a 2:1:1 molar ratio of the TiC, Ti, and Al precursor powders was used.
[0139] Note about Safety During Acid Washing of MAX Powder
[0140] During acid washing of metal-rich MAX powder (e.g. Al—Ti.sub.3AlC.sub.2) it is important to note that during the initial stage of the reaction (the first 20 minutes) significant amounts of gas will be produced as the intermetallic impurities are dissolved. In order to minimize the rate at which gas is produced and reduce the danger involved in this reaction we recommend taking the following precautions: (1) Perform the acid washing reaction in an ice bath. Once the reaction is no longer bubbling vigorously the ice bath can be removed or the ice can be allowed to melt. (2) Add MAX to the acid washing solution very slowly, at a rate of approximately 1 g per minute. (3) After all MAX has been added to the acid washing solution, monitor the reaction closely for at least 30 minutes to ensure no sudden changes in the gas evolution rate occur. (4) At no point during the acid washing process should the reaction vessel be capped, as the vessel could potentially pressurize rapidly, leading to an extremely dangerous situation.
[0141] MXene Synthesis
[0142] Typically, 1 g of Al—Ti.sub.3AlC.sub.2 (or conventional Ti.sub.3AlC.sub.2) was mixed with 20 mL of etchant and stirred at 400 rpm for 24 h at 35° C. The etchant was a 6:3:1 mixture (by volume) of 12 M HCl, DI water, and 50 wt. % HF (Acros Organics, Fair Lawn, N.J., USA). A loosely capped 60 mL high density polyethylene bottle was used as the etching container. The etched Al—Ti.sub.3C.sub.2 was washed with DI water via repeated centrifugation and decantation cycles until the supernatant reached pH ˜6 using a 175 mL centrifuge tube. Once the MXene was neutralized, one more additional wash cycle was performed to ensure the washing process was complete. 5 wash cycles using a single 175 mL centrifuge tube are typically enough for 1 g of MAX etched using 20 mL of etchant.
[0143] The etched multilayer MXene sediment was then dispersed in a 0.5 M solution of LiCl (typically 50 mL solution per gram of starting MAX) to start the delamination process. The MXene/LiCl suspension was then stirred at 400 rpm for a minimum of 4 h at room temperature. The MXene/LiCl suspension was then washed with DI water via repeated centrifugation and decantation of the supernatant using a 175 mL centrifuge tube.
[0144] The first wash cycle always sediments completely after 3 to 5 minutes of centrifugation at 3500 rpm. The second wash cycle and onwards were centrifuged for 1 h at 3500 rpm before the MXene supernatants were collected to ensure the MXene solutions were single flake.
[0145] The quantity and concentration of the delaminated MXene suspensions produced during each cycle of the delamination process is dependent on the quantity of the MAX that was etched and on the size of the centrifuge tubes used during delamination (FIG. 19a). The solution concentrations and yield reported in this study are typical for etching 1 g of Al—Ti.sub.3AlC.sub.2 in 20 mL of etchant and using 175 mL centrifuge tubes for delamination.
[0146] Large, single-layer Al—Ti.sub.3C.sub.2 flakes (>25 μm in the largest dimension,
[0147] Physical Characterization
[0148] Conductivity measurements were performed using a four-point probe with 1 mm probe separation (Jandel Engineering Ltd., Bedfordshire, UK) on freestanding MXene films made by vacuum-assisted filtration of delaminated single flake MXene solutions. The measured sheet resistances of the films were converted into conductivity by using the thickness of the films taken from SEM images of the film cross sections. UV-Vis spectra were recorded using an Evolution 201 spectrometer (Thermo Scientific, MA, USA) with a 10 mm optical path length cuvette and scanning from 200 to 1000 nm, where the absorbance was measured for samples at 100× dilution.
[0149] Particle size analysis was performed using a Malvern Panalytical Zetasizer Nano ZS in a polystyrene cuvette. Three measurements were recorded, and the average intensity distribution was reported. For the long-term storage tests, solutions from the 3rd delamination cycle (700 mL) were used since any excess LiCl would have been removed by that cycle.
[0150] The concentrations of the stored Ti.sub.3C.sub.2 samples were calculated by measuring the absorbance changes of the samples over time versus the absorbance of the Ti.sub.3C.sub.2 samples at the initial time of storage, normalized at 264 nm. Raman spectra were recorded using a reflection mode Renishaw InVia spectrometer (Renishaw plc, Gloucestershire, UK) equipped with 20× (NA=0.4) and 63× (NA=0.7) objectives and a diffraction-based room-temperature CCD spectrometer.
[0151] For MAX phase analysis, we used an Ar+ laser (488 and 514 nm emissions) and an 1800 line/mm grating, and for analysis of MXene we used a diode (785 nm) laser with a 1200 line/mm diffraction grating. The power of the lasers was within the ˜0.3-1 mW range. Transmission electron microscopy and scanning transmission electron microscopy images were taken using a JEOL JEM2100 and JEOL NEOARM (JEOL Ltd., JP), respectively, at an operating voltage of 200 kV. The colloid solution containing delaminated Al—Ti.sub.3C.sub.2 flakes was drop-cast onto lacey carbon films on copper TEM grids (Electron Microscopy Sciences, PA, USA).
[0152] Thermal analysis (TGA) measurements were conducted using an SDT 650 thermal analysis system (TA Instruments, New Castle, Del., USA). Samples were heated at 10° C./min from room temperature to 1500° C. under constant flow of compressed dry air at 100 sccm.
[0153] Samples for thermal analysis were equilibrated overnight in vials exposed to ambient atmosphere. XPS spectra were collected on MAX powder using a PHI VersaProbe 5000 instrument (Physical Electronics, USA) with a 200 μm and 50 W monochromatic Al—K.sub.α X-ray source. Samples were sputtered for 10 min at 2 kV, 2 uA with Ar.sup.+ ion beam. Pass energy and step size were set at 23.5 eV and 0.05 eV, respectively. Quantification and peak fitting were conducted using CasaXPS V2.3.19 Software.
[0154] Comparative data are provided in
[0155] By contrast, MXene materials made according to the present disclosure (as shown in
[0156]
[0157] By contrast, Raman spectra (
[0158] Further evidence of the stability of the disclosed materials is provided in
[0159]
[0160]
EMBODIMENTS
[0161] The following embodiments are exemplary only and do not limit the scope of the present disclosure or the appended claims.
[0162] Embodiment 1. A composition having enhanced storage stability, comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M, wherein M is at least one Group IIIB, IVB, VB, or VIB metal, wherein each X is C, N, or a combination thereof; n=1, 2, 3, or 4, wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and wherein, following storage in degassed deionized water at 25 deg. C. for 4 months, (a) stored composition exhibits an essentially unchanged UV-vis spectra between 200 and 1000 nm as compared to comparable composition that has not been stored, (b) a film formed from stored composition exhibits a conductivity between about 10,000 and 15,000 S/cm, (c) stored composition exhibits an essentially unchanged XPS spectra from a survey scan of the 2p region of M, or any combination of (a), (b), and (c).
[0163] Embodiment 2. The composition of Embodiment 1, wherein M is at least one Group IVB, Group VB, or Group VIB metal.
[0164] Embodiment 3. The composition of Embodiment 1, wherein M is Ti, and n is 1 or 2.
[0165] Embodiment 4. The composition of Embodiment 1, wherein M.sub.n+1X.sub.n comprises Sc.sub.2C, Sc.sub.2N, Ti.sub.2C, Ti.sub.2N, V.sub.2C, V.sub.2N, Cr.sub.2C, Cr.sub.2N, Zr.sub.2C, Zr.sub.2N, Nb.sub.2C, Nb.sub.2N, Hf.sub.2C, Hf.sub.2N, Ti.sub.3C.sub.2, Ti.sub.3N.sub.2, V.sub.3C.sub.2, Ta.sub.3C.sub.2, Ta.sub.3N.sub.2, Ti.sub.4C.sub.3, Ti.sub.4N.sub.3, V.sub.4C.sub.3, V.sub.4N.sub.3, Ta.sub.4C.sub.3, Ta.sub.4N.sub.3, or a combination thereof.
[0166] Embodiment 5. The composition of Embodiment 1, wherein M.sub.n+1X.sub.n comprises Ti.sub.3C.sub.2, Ti.sub.3CN, Ti.sub.2C, Ta.sub.4C.sub.3 or (V.sub.1/2Cr.sub.1/2).sub.3C.sub.2.
[0167] Embodiment 6. The composition of Embodiment 1 wherein M is Ta, and n is 2 or 3.
[0168] Embodiment 7. The composition of Embodiment 1, the crystal cells having an empirical formula Ti.sub.3C.sub.2 or Ti.sub.2C and wherein at least one of said surfaces of each layer has surface terminations comprising hydroxide, oxide, sub-oxide, or a combination thereof.
[0169] Embodiment 8. The composition of Embodiment 1, wherein the composition comprises an electrically conductive or semiconductive surface.
[0170] Embodiment 9. The composition of Embodiment 1, wherein M is at least one of Sc, Y, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.
[0171] Embodiment 10. A device, comprising a composition according to any one of Embodiments 1-9.
[0172] Embodiment 11. A method, comprising fabricating a composition according to any one of Embodiments 1-9.
[0173] Embodiment 12. A method of preparing a composition, comprising: removing substantially all of the A atoms from a MAX-phase composition having an empirical formula of M.sub.n+1AX.sub.n and comprising an excess of A, M, and/or X, wherein M is at least one Group IIIB, IVB, VB, or VIB metal, wherein A is an A-group element, each X is C, N, or a combination thereof, and n=1, 2, 3, or 4; thereby providing a composition comprising at least one layer having a first and second surface, each layer comprising a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M, and wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof.
[0174] Embodiment 13. The method of Embodiment 12, wherein the A atoms are removed by a process comprising a treatment with a fluorine-containing acid.
[0175] Embodiment 14. The method of Embodiment 13, wherein the fluorine-containing acid is aqueous hydrofluoric acid.
[0176] Embodiment 15. The method of Embodiment 12, further comprising sonication. Sonication can be performed by, e.g., ultrasonic or megasonic sources.
[0177] Embodiment 16. The method of Embodiment 15, wherein the MAX-phase composition comprises an excess of A, and optionally wherein the MAX-phase material contains essentially stoichiometric amounts of M and X.
[0178] Embodiment 17. The method of Embodiment 12, wherein removing substantially all of the A atoms from a MAX-phase composition is done electrochemically.
[0179] Embodiment 18. A method, comprising: with a MAX-phase composition having an empirical formula of M.sub.n+1AX.sub.n and comprising an amount of MA intermetallic impurities, the MAX-phase composition optionally being formed from thermal treatment of an about 2:1:1 mass ratio of MX, M, and A particulate, removing substantially all of the A atoms from the MAX-phase composition, and removing substantially all of the intermetallic impurities from the MAX-phase composition.
[0180] Embodiment 19. A method, comprising: combining amounts of a metal M, a composition MX, and a metal A to form a mixture, the mixture (a) comprising an amount of the metal A that is in excess of the amount needed to make a stoichiometric amount of a MAX-phase material formed from M, MX, and A, (a) comprising an amount of the composition MX that is in excess of the amount needed to make a stoichiometric amount of a MAX-phase material formed from M, MX, and A, (c) comprising an amount of the metal M that is in excess of the amount needed to make a stoichiometric amount of a MAX-phase material formed from M, MX, and A, or any combination of (a), (b), and (c); treating the mixture so as to give rise to a MAX-phase material, optionally removing substantially all of the A atoms from the MAX-phase composition, and optionally removing substantially all of the intermetallic impurities from the MAX-phase composition.
[0181] Embodiment 20. A composition having enhanced storage stability, comprising:
[0182] a substantially two-dimensional array of crystal cells,
[0183] each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M,
[0184] wherein M is at least one Group IIIB, IVB, VB, or VIB metal,
[0185] wherein each X is C, N, or a combination thereof;
[0186] n=1, 2, 3, or 4,
[0187] wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and
[0188] wherein, said composition is formed from removing essentially all of metal A from a MAX-phase material comprising metal M, element X, and an excess of metal A.
[0189] Embodiment 21. The composition of Embodiment 20, wherein the composition, when heated in air, exhibits an onset of weight gain at a higher temperature than a comparable composition formed from removing essentially all of metal A from a MAX-phase material comprising stoichiometric amounts of metal M, element X, and metal A.
[0190] Embodiment 22. The composition of any one of Embodiments 20 to 21, wherein the composition, when heated in air, achieves a weight gain of a given percentage at a temperature higher than a temperature at which a comparable composition formed from removing essentially all of metal A from a MAX-phase material comprising stoichiometric amounts of metal M, element X, and metal A achieves the weight gain of the given percentage.
[0191] Embodiment 23. A composition having enhanced storage stability, comprising:
[0192] a substantially two-dimensional array of crystal cells,
[0193] each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M,
[0194] wherein M is at least one Group IIIB, IVB, VB, or VIB metal,
[0195] wherein each X is C, N, or a combination thereof;
[0196] n=1, 2, 3, or 4, and
[0197] wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and
[0198] wherein the composition has a molar ratio of M:X in the range of from (n+1):0.95n to n+1:1.05n.
[0199] Embodiment 24. The composition of Embodiment 23, wherein the composition has a molar ratio of M:X in the range of from (n+1):0.98n to n+1:1.02n.
[0200] Embodiment 25. The composition of Embodiment 24, wherein the composition exhibits a molar ratio of M:X in the range of from (n+1):0.995n to n+1:1.005n.
[0201] Embodiment 26. The composition of Embodiment 25, wherein the composition exhibits an empirical ratio of M:X of (n+1):1n.
[0202] Embodiment 27. A composition having enhanced storage stability, comprising:
[0203] a substantially two-dimensional array of crystal cells,
[0204] each crystal cell having an empirical formula of M.sub.n+1X.sub.n, such that each X is positioned within an octahedral array of M,
[0205] wherein M is at least one Group IIIB, IVB, VB, or VIB metal,
[0206] wherein each X is C, N, or a combination thereof;
[0207] n=1, 2, 3, or 4, and
[0208] wherein at least one of said surfaces of each layer has surface terminations comprising alkoxide, carboxylate, halide, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, thiol, or a combination thereof, and
[0209] (a) wherein the composition exhibits an essentially an essentially unchanged UV-vis spectrum between 200 and 1000 nm after storage in water at room temperature for 30 days,
[0210] (b) wherein the composition exhibits an essentially an essentially absorbance at a given wavelength between 200 and 1000 nm after storage in water at room temperature for 30 days
[0211] (c) wherein the composition exhibits an essentially an essentially unchanged Raman spectrum between 200 and 1000 nm after storage in water at room temperature for 30 days,
[0212] (d) wherein the composition comprises a plurality of flakes and wherein after storage in water at room temperature for 300 days, (1) the flakes are essentially crack-free, (2) the flakes are essentially free of metal oxide crystals formed of M, or both (1) and (2), or
[0213] (e) any combination of (a), (b), (c), and (d).
[0214] The present disclosure also provides methods of using the disclosed compositions. Any one or more of the compositions can be used in applications in which the composition is exposed to the ambient environment, e.g., in an environmental monitor such as a weather device, an antenna, a speaker, and the like. The disclosed compositions can also be used in applications where they are exposed to relatively higher temperatures, e.g., temperatures of from 350 to 500 deg C. Such applications can include, e.g., propulsion systems, exhaust systems, undersea applications, down-well applications (e.g., subterranean wells), rockets, appliances, medical instrumentation, and the like. Owning to their enhanced temperature tolerance, the disclosed compositions are accordingly suited to particularly demanding applications.
[0215] The following references are incorporated by reference in their entireties for any and all purposes.
REFERENCES
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