Copper-reduced graphene oxide core-shell transparent conductor for controlling light transmission and method of making the same
10831071 ยท 2020-11-10
Assignee
Inventors
- Shengyun Huang (Longueuil, CA)
- Fuqiang Ren (Longueuil, CA)
- Dongling Ma (Pointe-Claire, CA)
- Haining Zhu (Lasalle, CA)
- Shiyong Zhao (Longueuil, CA)
- Dawei Zhang (Lachine, CA)
- Shuyong Xiao (Sy-Laurent, CA)
Cpc classification
G02F1/13439
PHYSICS
C09K2323/00
CHEMISTRY; METALLURGY
C09K2323/03
CHEMISTRY; METALLURGY
G02F1/172
PHYSICS
International classification
Abstract
The invention provides an electrically conductive and optically transparent copper-reduced graphene oxide core-shell nanowires film and its specific application for light transmission controlling devices.
Claims
1. A light transmission controlling device, comprising of: a first layer of a transparent substrate; a first layer of copper-reduced graphene oxide core-shell nanowires (Cu-rGO-csNW) film residing on top of said first layer of said transparent substrate; a layer of polymeric matrix containing suspended particles on the top of said first layer of Cu-rGO-csNW film; a second layer of Cu-rGO-csNW film residing on said layer of polymeric matrix; a second layer of transparent substrate on said layer of second layer of Cu-rGO-csNW film, wherein said first layer of Cu-rGO-csNW film and said second layer of Cu-rGO-csNW film are formed from a copper-graphene oxide core-shell nanowires (Cu-GO-csNW) film.
2. The light transmission controlling device as recited in claim 1, wherein said first layer of transparent substrate is a glass sheet.
3. The light transmission controlling device as recited in claim 1, wherein said first layer of transparent substrate is PET film.
4. The light transmission controlling device as recited in claim 1, wherein said second layer of transparent substrate is a glass sheet.
5. The light, transmission controlling device as recited in claim 1, wherein said second layer of transparent substrate is PET film.
6. The light transmission controlling device as recited in claim 1, wherein said first layer of Cu-rGO-csNW film has a transmittance from 75%-95%.
7. The light transmission controlling device as recited in claim 1, wherein said second layer of Cu-rGO-csNW film has a transmittance from 75%-95%.
8. The light transmission controlling device as recited in claim 1, wherein said first layer of Cu-rGO-csNW film has a square resistance from 10 to 1000 ohm.
9. The light transmission controlling device as recited in claim 1, wherein said second layer of Cu-rGO-csNW film has a square resistance from 10 to 1000 ohm.
10. The light transmission controlling device as recited in claim 1, wherein said first layer of Cu-rGO-csNW film has a thickness of 50 nm to 250 nm.
11. The light transmission controlling device as recited in claim 1, wherein said second layer of Cu-rGO-csNw film has a thickness of 50 nm to 250 nm.
12. The light transmission controlling device as recited in claim 1, wherein said layer of polymeric matrix has a thickness between 20 m and 200 m.
13. The light transmission controlling device as recited in claim 1, wherein said layer of polymeric matrix is a cross-linked polysiloxane.
14. The light transmission controlling device as recited in claim 1, wherein said suspended particles contained inside said layer of polymeric matrix are polyhalides.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
DETAILED DESCRIPTION OF THE INVENTION
(7) The present invention provides an electrically conductive and optically transparent Cu-rGO-csNW films and the method to make such a film. It also provides a method to assemble light transmission controlling devices using the electrically conductive and optically transparent Cu-rGO-csNW film provide in this invention. The developed TCF electrode not only presents attractive features in SPD, but also holds high promise for applications in solar cells, LED, touch panels and flat displays. In this invention, the developed TCF for particular light controlling device, more specifically SPD has been disclosed.
(8)
(9) According to this invention as illustrated in
(10) According to this invention as illustrated in
(11) In this invention, the copper-graphene oxide (Cu-GO) core-shell nanowires (Hereinafter, copper-graphene oxide (Cu-GO) core-shell nanowires are abbreviated as Cu-GO-csNW) were first prepared and then subjected to chemical reduction to yield Cu-rGO-csNW. According to this invention, Cu-GO-csNW formation was first achieved by mixing graphene oxide (GO) aqueous solution with copper nanowires (CuNW) in iso-propanol (IPA) suspension. The ratio of CuNW diameter to GO thickness was adjusted and optimized for balancing the optical and electrical properties of core-shell hybrid NW and films by manipulating surface chemistry and ligands and by varying concentrations of both CuNW in IPA and GO in water as well. The above variables were systematically screened and, hence a suitable GO thickness for Cu-NWs of certain diameter was finally identified. According to this invention, the Cu-GO-csNW films can be obtained by transfer printing, spin coating, blade coating and droplet coating, and other film formation techniques. Also, by varying either the volume or concentration of Cu-GO-csNW in solution, the films with varied thicknesses and different transparencies can be obtained. In this invention, a membrane transferring technique is further disclosed, where the Cu-GO-csNW is deposited by vacuum filtration on a filter membrane, followed by pressure-aided NW film transfer to the selected transparent substrate.
(12) In this invention, either a one-step or a two-step reduction protocol can be used to prepare Cu-rGO-csNW films from Cu-GO-csNW films. In the two-step reduction protocol, the reduction of Cu-GO-csNW was firstly performed by exposing the films to reducing environments, such as hydrazine vapor, dipping them in sodium borohydride or ascorbic acid solutions. Subsequently, in the second step, the partially reduced films were further thermally annealed under reducing atmosphere, such as Argon:Hydrogen (Ar:H.sub.2) or Nitrogen:Hydrogen (N.sub.2:H.sub.2) at a temperature from 200 to 400 C. In the one-step reduction protocol, the Cu-GO-csNW films were only reduced by thermal annealing under reducing atmosphere. The thermal annealing step enhances the degree of reduction of the films, and more importantly, it sinters the NWs together to create intimate contact junctions. Considering the ultra-small diameters and consequently largely reduced melting points, overheating will easily break the NWs. Under-heating, however, does not provide enough thermal energy to weld the NWs together and to reduce the GO. Therefore, the annealing temperature requires careful optimization and prefers to be in the range of 200 to 400 C., and mostly prefers to be in the range of 240 to 300 C.
(13) According to this invention as illustrated in
(14) According to this invention as illustrated in
(15) As illustrated in
(16) As illustrated in
(17) Practically according to this invention, the said PM (300) material, the said SM (320) material and the said LPP (310) are formulated into an emulsion, hereinafter referred as SPD emulsion. The film formed from this SPD emulsion can be sandwiched between two Cu-rGO-csNW layer 200 and 400. Other additives including stabilizer and/or emulsifier can also be added into this formulated SPD emulsion.
(18) In one embodiment, the layer 100 and the layer 500 are glass material. The Cu-rGO-csNW film 200 and the Cu-rGO-csNW film 400 were first formed onto glass substrate 100 and 500 to have two identical TCF films, 200/100 and 400/500. Adhesive spacers were used to define the thickness and device geometry on one TCF film. The formulated SPD emulsion was then filled into the space defined by the spacers, and subsequently covered by another TCF film. Such an assembly was then exposed to UV-radiation to cure the emulsion and form the layer 300 between the layer 200 and the layer 400, ultimately a light controlling device as illustrated in
(19) In another embodiment, the layer 100 and the layer 500 are PET film. The Cu-rGO-csNW film 200 and the Cu-rGO-csNW film 400 were first formed onto the PET film 100 and 500 to have two identical TCF films, 200/100 and 400/500. The formulated SPD emulsion was first applied onto one TCF film 200/100 by doctor blade method to achieve a thickness of about 100 m, then was exposed to UV-radiation to cure the emulsion and form the layer 300 on top of the film of 200/100; finally another TCF film 400/100 was placed on the top of the layer 300 to complete the assembly of a light controlling device as illustrated in
EXAMPLES
(20) The invention will now be described in more detail with reference to the following examples. However, it should be understood that these examples are given for the purpose of illustration only and are not intended to limit the scope of the present invention.
Example 1
(21) In this example, Cu-GO-csNW nano-structure was prepared by mixing GO aqueous solution (0.5 mg/ml, 2 ml) with CuNW in IPA (1 mg/ml, 5 ml) suspension. The mixture was then washed by centrifugation (8000 rmp, 5 min) several times to remove residual GO. The ratio of CuNW diameter to GO thickness can be adjusted and optimized for balancing the optical and electrical of core-shell hybrid NW and films. The morphologies of the synthesized core-shell NWs were examined using a transmission electron microscope (TEM), as shown in
Example 2
(22) In this example, the Cu-GO-csNW films were obtained by vacuum filtration of the csNW nano-structure dispersion as described in Example 1 using polytetrafluoroethylene porous filter membrane. The deposited films were subsequently transferred to a glass slide with csNW in contact with the glass by applying uniform pressure (3 kg weight) to the backside of the membrane. The membrane was peeled off to leave csNW network on the target substrate after 6 hours. For the thermal reduction, the as-prepared Cu-GO-csNW film was then exposed to a mixed atmosphere containing 95% vol./vol. argon (Ar) and 5% vol./vol. of hydrogen (H.sub.2) at a temperature of 240 C. for 2 hours. The thermal annealing can not only enhance the degree of reduction of the films, but also more importantly, it can sinter the NWs together to create intimate contact junctions. After the reduction, the Cu-GO-csNW film was transformed to the designed Cu-rGO-csNW film. The transmittance and electronic conductivity of Cu-rGO-csNW film were measured by an UV-vis-NIR spectrophotometer and a four-point probe, respectively. As shown in
Example 3
(23) Following the procedures described in Example 1 and Example 2, Cu-rGO-csNW films with different thickness were obtained by varying the loading amount during vacuum filtration. With the increase of thickness, the transmittance at 550 nm of the films was gradually lowered from 92.7% to 72.5%, as show in
Example 4
(24) In this example, a SPD device of 2 cm2 cm was assembled using the adhesive spacer method with a thickness of 100 m according to the typical procedure disclosed above, where the transparent substrate 100, the Cu-rGO-csNW film 200, the polymeric matrix layer 300, the Cu-rGO-csNW film 400, and the transparent substrate layer 500 used are respectively glass, Cu-rGO-csNW film (transmittance 90% and sheet resistance 70 /sq, prepared in Example 3), PMMA containing suspended polyhalide-type LPP particles, Cu-rGO-csNW film (transmittance 90% and sheet resistance 70 /sq, prepared in Example 3) and glass.
(25)
Example 5
(26) The same conditions were used as Example 4, but the transmittance of the Cu-rGO-csNW film was reduced to 80%. The maximum optical modulation of the device was reduced to around 39.1%.
REFERENCE CITED
U.S. Patent Documents
(27) U.S. Pat. No. 9,581,877, John David Bass et al. 2016 U.S. Pat. No. 3,585,381A, Theodore L Hodson et al. 1971 U.S. Pat. No. 8,059,331, Osamu Higashida et al. 2010 US20100047593, Osamu Higashida et al. 2010 U.S. Pat. No. 6,900,923, Srinivasan Chakrapani et al. 2005 U.S. Pat. No. 7,791,788, Steven M. Slovak et al. 2010