Electron acceptors based on alpha-position substituted PDI for OPV solar cells
10818849 ยท 2020-10-27
Assignee
Inventors
- Donglin Zhao (Hyougo, JP)
- Qinghe Wu (Chicago, IL, US)
- Luping YU (Chicago, IL, US)
- Zhengxu Cai (Chicago, IL, US)
Cpc classification
C08G61/126
CHEMISTRY; METALLURGY
C08G61/123
CHEMISTRY; METALLURGY
H10K85/626
ELECTRICITY
H10K30/30
ELECTRICITY
H10K85/00
ELECTRICITY
H10K85/6572
ELECTRICITY
C09B69/008
CHEMISTRY; METALLURGY
H10K30/00
ELECTRICITY
H10K85/113
ELECTRICITY
C07D519/00
CHEMISTRY; METALLURGY
C09B5/62
CHEMISTRY; METALLURGY
H10K85/6576
ELECTRICITY
H10K85/621
ELECTRICITY
H10K85/615
ELECTRICITY
Y02E10/549
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
C09B69/00
CHEMISTRY; METALLURGY
C09B69/10
CHEMISTRY; METALLURGY
C09B5/62
CHEMISTRY; METALLURGY
C07D519/00
CHEMISTRY; METALLURGY
C08G61/12
CHEMISTRY; METALLURGY
Abstract
The present disclosure relates to -substituted perylene diimide (PDI) derivatives as small molecular and polymerized electron acceptors in organic photovoltaic cells.
Claims
1. A molecular acceptor of formula A: ##STR00077## where R.sup.1 is selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; x is an integer selected from: 2, 4 and 6; wherein when Ar.sub.a is bonded at 1, and x is 2, Ar.sub.a is selected from: a bond, ##STR00078## ##STR00079## wherein R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and ##STR00080## wherein R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl; or when Ar.sub.a is bonded at 1, and x is 4, Ar.sub.a is selected from: ##STR00081## ##STR00082## ##STR00083## or when Ar.sub.a is bonded at 1, and x is 6, Ar.sub.a is selected from: ##STR00084## or when Ar.sub.a is bonded at 2 and 3 and x is 2, Ar.sub.a is selected from: ##STR00085## wherein R.sup.12 and R.sup.13, if present, are selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein y is an integer selected from 1 and 3; or when Ar.sub.a is bonded at 2 and 3 and x is 4, Ar.sub.a is selected from: ##STR00086## or when Ar.sub.a is bonded at 2 and 3 and x is 6, Ar.sub.a is: ##STR00087##
2. A molecular acceptor of formula I: ##STR00088## where R.sup.1 is selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; x is an integer selected from: 2, 4 and 6; wherein when x is 2, Ar is selected from: a bond, ##STR00089## ##STR00090## R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and ##STR00091## R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl; or when x is 4, Ar is selected from: ##STR00092## ##STR00093## ##STR00094## or when x is 6, Ar is selected from: ##STR00095##
3. The molecular acceptor of claim 2 further selected from an acceptor of formula II: ##STR00096## where R.sub.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and Ar.sub.1 is selected from: a bond, ##STR00097## ##STR00098## R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from a: C.sub.1-C.sub.30 linear or branched chain alkyl, and ##STR00099## R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl.
4. The molecular acceptor of claim 3 further selected from: ##STR00100## ##STR00101## ##STR00102## ##STR00103##
5. The molecular acceptor of claim 4 having a power conversion efficiency of greater than 4.92%.
6. The molecular acceptor of claim 1 further selected from an acceptor of formula VI: ##STR00104## where R.sup.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and when Ar.sub.5 is bonded at 1, Ar.sub.5 is selected from: a bond ##STR00105## ##STR00106## wherein R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and ##STR00107## wherein R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl; or wherein when Ar.sub.5 is bonded at 2 and 3, where Ar.sub.5 is selected from: ##STR00108## wherein R.sup.12 and R.sup.13, if present, are selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein y is an integer selected from 1 and 3.
7. The molecular acceptor of claim 6 further selected from an acceptor of formula VII: ##STR00109## where R.sub.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein Ar.sub.6 is selected from: ##STR00110## wherein R.sup.12 and R.sup.13, if present, are selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein y is an integer selected from 1 and 3.
8. The molecular acceptor of claim 7 further selected from: ##STR00111## wherein EH is 2-ethyl hexyl.
9. The molecular acceptor of claim 8 having a power conversion efficiency of greater than 5.59%.
10. A molecular acceptor of claim 1, further selected from an acceptor of formula IX: ##STR00112## where R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein when Ar.sub.8 is bonded at 1, Ar.sub.8 is selected from ##STR00113## ##STR00114## ##STR00115## or when Ar.sub.8 is bonded at 2 and 3, Ar.sub.8 is selected from: ##STR00116##
11. A molecular acceptor of claim 10 further selected from an acceptor of formula III: ##STR00117## where R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and Ar.sub.2 is selected from the group consisting of: ##STR00118## ##STR00119##
12. The molecular acceptor of claim 11 selected from: ##STR00120## ##STR00121## ##STR00122##
13. A molecular acceptor of claim 10 further selected from an acceptor of formula X: ##STR00123## where R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein Ar.sub.9 is selected from: ##STR00124##
14. The molecular acceptor of claim 13 further selected from: ##STR00125##
15. The molecular acceptor of claim 1 further selected from an acceptor of formula XI: ##STR00126## where R.sup.1 is selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and when Ar.sub.10 is bonded at 1, Ar.sub.10 is selected from: ##STR00127## or when Ar.sub.10 is bonded at 2 and 3, Ar.sub.10 is: ##STR00128##
16. A molecular acceptor of claim 15 further selected from an acceptor of formula IV: ##STR00129## wherein R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and Ar.sup.3 is selected from the group consisting of: ##STR00130##
17. The molecular acceptor of claim 1, where R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is the same.
18. The molecular acceptor of claim 1, where R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is different.
19. The molecular acceptor of claim 1, where R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is 2-ethylhexyl.
20. The molecular acceptor of claim 1, where R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is 2-butyloctyl.
21. The semiconducting acceptor of claim 1, where R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is 1-propylbutyl.
22. A use of the semiconducting acceptor of claim 1 in a solar cell, an optical device, an electroluminescent device, a photovoltaic cell, a semiconducting cell, or photodiode.
23. A semiconducting polymer of formula VIII: ##STR00131## where R.sup.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; n is an integer greater than 1; and Ar.sub.7 is selected from: ##STR00132## ##STR00133## where R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and ##STR00134## R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(27) Described herein are semiconducting small molecular electron acceptors, polymers, and their methods of synthesis and use. The acceptors and their polymers can be used in BHJ solar cells. The photovoltaic devices employing these electron deficient compounds as the acceptors and electron rich polymers as donors exhibit high solar conversion efficiency.
(28) One embodiment described herein is a perylene diimide derivative functionalized at the ortho-position and used as an electron acceptor in non-fullerene organic photovoltaic cells. The semi-conducting small molecular electron acceptor may be conjugated or polymerized in photovoltaic cells. Photovoltaic devices employing these electron deficient compounds as the acceptors and electron rich polymers as donors exhibit high solar conversion efficiency.
(29) In one embodiment, a molecular acceptor is represented by formula A:
(30) ##STR00012##
x is an integer selected from: 2, 4 and 6;
wherein when Ar.sub.a is bonded at 1, and x is 2, Ar.sub.a is selected from: a bond,
(31) ##STR00013## ##STR00014##
wherein R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and
(32) ##STR00015##
wherein R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl;
W is Se or S; Z is C or Si;
or when Ar.sub.a is bonded at 1, and x is 4, Ar.sub.a is selected from:
(33) ##STR00016## ##STR00017## ##STR00018##
or when Ar.sub.a is bonded at 1, and x is 6, Ar.sub.a is selected from:
(34) ##STR00019##
or when Ar.sub.a is bonded at 2 and 3 and x is 2, Ar.sub.a is selected from:
(35) ##STR00020##
wherein R.sup.12 and R.sup.13, if present, are selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and
wherein y is an integer selected from 1 and 3;
or when Ar.sub.a is bonded at 2 and 3 and x is 4, Ar.sub.a is selected from:
(36) ##STR00021##
or when Ar.sub.a is bonded at 2 and 3 and x is 6, Ar.sub.a is selected from:
(37) ##STR00022##
(38) In one embodiment, a molecular acceptor of formula I:
(39) ##STR00023##
where R.sup.1 is selected from: C.sub.1-C.sub.30 linear or branched chain alkyl;
x is an integer selected from: 2, 4 and 6;
wherein when x is 2, Ar is selected from: a bond,
(40) ##STR00024## ##STR00025##
R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and
(41) ##STR00026##
R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl;
W is Se or S; Z is C or Si;
or when x is 4, Ar is selected from:
(42) ##STR00027## ##STR00028## ##STR00029##
or when x is 6, Ar is selected from:
(43) ##STR00030## ##STR00031## ##STR00032##
(44) In one aspect, the molecular acceptor is further selected from an acceptor of formula VI:
(45) ##STR00033##
where R.sub.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and
when Ar.sub.5 is bonded at 1, Ar.sub.5 is selected from: a bond
(46) ##STR00034## ##STR00035##
wherein R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and
(47) ##STR00036##
wherein R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl;
W is Se or S; Z is C or Si;
Or wherein when Ar.sub.5 is bonded at 2 and 3, where Ar.sub.5 is selected from:
(48) ##STR00037##
wherein R.sup.12 and R.sup.13, if present, are selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and
wherein y is an integer selected from 1 and 3.
(49) In one aspect, the molecular acceptor is further selected from an acceptor of formula II:
(50) ##STR00038##
where R.sub.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and
Ar.sub.1 is selected from: a bond,
(51) ##STR00039## ##STR00040##
R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R, R.sup.9 and R.sup.10, if present, are each independently selected from a: C.sub.1-C.sub.30 linear or branched chain alkyl, and
(52) ##STR00041##
R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl;
W is Se or S; and Z is C or Si.
(53) In one aspect, the molecular acceptor further selected from:
(54) ##STR00042## ##STR00043## ##STR00044## ##STR00045##
(55) In one aspect, the molecular acceptor having a power conversion efficiency of greater than 4.92%.
(56) In one aspect, the molecular acceptor further selected from an acceptor of formula VII:
(57) ##STR00046##
where R.sub.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and wherein Ar.sub.6 is selected from:
(58) ##STR00047##
wherein R.sup.12 and R.sup.13, if present, are selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and
wherein y is an integer selected from 1 and 3.
(59) In one aspect, the molecular acceptor further selected from:
(60) ##STR00048##
wherein EH is 2-ethyl hexyl.
(61) In one aspect, the molecular acceptor having a power conversion efficiency of greater than 5.59%.
(62) In one aspect, the molecular acceptor further selected from an acceptor of formula IX:
(63) ##STR00049##
where R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and
wherein when Ar.sub.8 is bonded at 1 Ar.sub.8 is selected from
(64) ##STR00050## ##STR00051##
or when Ar.sub.8 is bonded at 2 and 3, and Ar.sub.8 is selected from:
(65) ##STR00052##
(66) In one aspect, the molecular acceptor selected from an acceptor of formula III:
(67) ##STR00053##
where R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and
Ar.sub.2 is selected from the group consisting of:
(68) ##STR00054## ##STR00055## ##STR00056##
(69) In one aspect, the molecular acceptor is selected from:
(70) ##STR00057## ##STR00058##
(71) In one aspect, the molecular acceptor is further selected from an acceptor of formula X:
(72) ##STR00059##
where R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and
Ar.sub.9 is selected from:
(73) ##STR00060##
(74) In one aspect, the molecular acceptor is further selected from:
(75) ##STR00061##
(76) In one aspect, the molecular acceptor further selected from an acceptor of formula XI:
(77) ##STR00062##
where R.sub.1 is selected from: C.sub.1-C.sub.30 linear or branched chain alkyl; and
when Ar.sub.10 is bonded at 1, Ar.sub.10 is selected from:
(78) ##STR00063##
or when Ar.sub.10 is bonded at 2 and 3, Ar.sub.10 is:
(79) ##STR00064##
(80) In one aspect, the molecular acceptor is further selected from an acceptor of formula IV:
(81) ##STR00065##
wherein R.sup.1 is C.sub.1-C.sub.30 linear or branched chain alkyl; and
Ar.sup.3 is selected from the group consisting of:
(82) ##STR00066##
(83) In one embodiment, a semiconducting polymer of formula VIII:
(84) ##STR00067##
where R.sup.1 is a selected from: C.sub.1-C.sub.30 linear or branched chain alkyl;
n is an integer greater than 1; and
Ar.sub.7 is selected from:
(85) ##STR00068## ##STR00069##
where R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10, if present, are each independently selected from: C.sub.1-C.sub.30 linear or branched chain alkyl, and
(86) ##STR00070##
R.sup.11, if present, is C.sub.1-C.sub.30 linear or branched chain alkyl;
W is Se or S; and Z is C or Si.
(87) In some embodiments, R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is the same. In some embodiments, R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is different. In some embodiments, R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is 2-ethylhexyl. In some embodiments, R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is 2-butyloctyl. In some embodiments, R.sup.1 and at least one of R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10 and R.sup.11 is 1-propylbutyl.
(88) In one aspect, a use of a semiconducting acceptor or semiconducting polymer is disclosed and described in a solar cell, an optical device, an electroluminescent device, a photovoltaic cell, a semiconducting cell, or photodiode.
(89) It will be readily apparent to one of ordinary skill in the relevant arts that suitable modifications and adaptations to the compositions, methods, and applications described herein can be made without departing from the scope of any embodiments or aspects thereof. The compounds and methods provided are exemplary and not intended to limit the scope of any of the specified embodiments. All of the various embodiments, aspects, and options disclosed herein can be combined in any and all variations or iterations. The scope of the compounds and methods described herein include all actual or potential combinations of embodiments, aspects, options, examples, and preferences herein described. All patents and publications cited herein are incorporated by reference herein for the specific teachings thereof.
EXAMPLES
(90) Design and Synthesis of Compounds.
(91) The selective functionalization of ortho-position (2,5,8,11-positions) of PDI by introducing boron, alkyl and aryl substituent are known, by which the optical, electrical, packing and film forming properties of PDI derivatives can be tuned. Evidences exist to demonstrate the minimized perturbation of the planarity of the perylene core due to functionalization at ortho-position of PDI. Furthermore, functional groups in ortho-position exert limited steric hindrance with PDI. Structural analysis with single crystal of NDI-4TH showed that due to the strong interaction between oxygen (CO in NDI) and proton (CH in adjacent thiophene), the twisted angle between thiophene ring and NDI core is only 25 which is much smaller than simulated dihedral angle (55-60) between adjacent thiophene ring and PDI when thiophene attached at bay-position of PDI. Considering the similarity between ortho-position of NDI and PDI, it is safe to assume that connecting aromatic units such as thiophenyl groups at the ortho-position of PDI can significantly increase the coplanarity of the desired compounds that will benefit the electron transporting. Based on these considerations, an a-monobrominated PDI was synthesized as the new building block to electron acceptors. Previously, it was demonstrated that polarity in acceptor polymers is also important to achieve high solar cell efficiency. To compare the effect of polarity, A-D-A and A-wA-A acceptors were developed. The BDT-Th is used as the donor. The pyrene diimide (PID) was successfully synthesized and used as the weak acceptor. This novel five ring diimide allows functionalization at 2,7-positions that are much less stereo-hindered than other diimides such as PDI and NDI.
(92) The -monobrominated PDI (compound 4, 5) was synthesized in a two-steps one-pot reaction as depicted in
(93) Electronic and Optical Properties.
(94) The cyclic voltammetry (CV) is employed to investigate the electrochemical properties of these compounds and is shown in
(95) TABLE-US-00001 TABLE 1 Electrochemical and optical data and DFT calculation results of PPID, PPID, PBDT and PBDT. Dihedral Bay LUMO HOMO LUMO HOMO angle angle I.sup.00/I.sup.01 I.sup.00/I.sup.01 QY (eV) (eV) (eV).sup.Cal (eV).sup.Cal () () sol film (%) PPID 3.84 5.86.sup.a 3.51 6.04 61.4 3.2 0.80 0.77 14 PPID 3.79 5.87.sup.a 3.51 5.96 57.6 17.7 1.38 0.98 43 PBDT 3.78 5.60 3.47 5.97 58.6 4.2 1.52 0.88 0.25 PBDT 3.76 5.64 3.46 5.53 54.4 16.8 1.33 1.11 0.01 .sup.aThe HOMO energy level was calculated by the equation of E.sub.HOMO = E.sub.LUMO E.sub.g.sup.opt
(96) The four compounds show nearly identical LUMO energy levels and the HOMO energy levels of compounds containing PID is slightly lower than those of PBDT and PBDT because of the electron-withdrawing nature of PID and electron-donating nature of BDT. The HOMO/LUMO energy levels for the four compounds all matches that of PTB7-Th with enough energy offset for both electron and hole transfer to each other. UV-Vis absorption spectra of the four compounds are recorded both in solution and in solid film (
(97) The results indicate that the -system in PPID is closed packed due to its good planarity. The excimer emission in PPID is overlapped with the weak emission from monomeric PPID. The emission spectrum of PPID only has one peak at 579 nm which corresponds to 1-0 transition of PDI, which may be due to special electronic features of the twisted PDI core.
(98) DFT Calculation.
(99) In order to gain more insight into the structural and electronic difference between -substituted and -substituted PDIs, density functional theory calculations by using the Gaussian package b3lyp/6-31 g(d) were carried out to evaluate the frontier molecular orbitals and structures of the four compounds. To facilitate the calculation, the long alkyl chains are replaced with methyl group. The pictorial presentation of LUMO and HOMO orbitals of the four compounds are shown in the
(100) OPV Properties and Active Layer Characterization.
(101) From the CV studies, the energy levels of these compounds as acceptors match with those of PTB7-Th as donor. The inverted solar cells were prepared with configuration of ITO/ZnO/Active Layer/MoO.sub.3/Al to evaluate the photovoltaic properties of these small molecules. Donor/acceptor ratio of 1:1.5 was spin-casted from hot chlorobenzene with 5% 1-chloronaphthalene as additive and the active layer with the thickness of 100 nm are formed.
(102) TABLE-US-00002 TABLE 2 The parameters summary of solar cell devices with PPID, PPID, PBDT and PBDT as acceptors and PTB7-Th as donor. Eff (%) J.sub.sc (best .sub.e (cm.sup.2V.sup.1 RMS Acceptor (mAcm.sup.2) V.sub.oc (V) FF device) s.sup.1) (pm) PPID 10.15 0.5 0.77 0.01 0.44 0.01 3.49 0.12 4.46 10.sup.4 738.736 (3.61) PPID 9.14 0.4 0.78 0.01 0.45 0.01 3.20 0.27 3.48 10.sup.4 732.453 (3.47) PBDT 12.74 0.4 0.81 0.01 0.46 0.01 4.76 0.16 8.00 10.sup.4 988.090 (4.92) PBDT 9.80 0.3 0.81 0.01 0.44 0.01 3.49 0.04 4.81 10.sup.4 872.371 (3.53)
The device results demonstrate that PDI based acceptors show very similar Voc with that of PDI based acceptors if they are connected by the same liker, which is anticipated due to the similarity between their LUMO energy levels. For the BDT linked acceptors, the average PCE of 4.76% for PBDT is achieved with J.sub.sc of 12.74 mA/cm.sup.2, V.sub.oc of 0.81 V and FF of 0.46, which is 36% higher than that for PBDT. The PCE enhancement is largely due to much higher J.sub.sc (12.74 mA/cm.sup.2) values for PBDT than that (9.80 mA/cm.sup.2) for PBDT. The slightly higher PCE of 3.49% for PPID than that of 3.20% for PPID can be attributed to a better intermolecular packing in PPID than in PPID. This is consistent with the smaller twisted angle in the PDI moiety in DFT calculation and the excimer formation in PPID solution shown by the emission spectrum, which led to a better J.sub.sc value of 10.15 mA/cm.sup.2 than that (9.14 mA/cm.sup.2) for PPID. These results indicated that acceptors based on PDI exhibit superior photovoltaic performance over that of PDI based acceptors. The bottleneck for these devices is the low fill factor value of 0.450.01, which is far behind polymer/fullerene devices' values (>0.6). Further device optimization is underway to explore the potential of PDI-based acceptors.
(103) The external quantum efficiency (EQE) of the optimal PPID/PPID/PBDT/PBDT:PTB7-Th devices were measured and are shown in
(104) It was found that the absorption spectrum of PPID and PBDT in the blend film is very similar with that in pure film. The PPID and PBDT not only maintain the two sharp and distinctive perylene diimide's 0-0 and 0-1 vibrational peaks at 540 nm and 495 nm, but also have a shoulder of 0-2 transition at 450 nm. However, in PPID and PBDT's blend films, 0-0 and 0-1 transitions are broadened and almost merged with each other, and 0-2 transition totally disappeared, which is different with their pure film absorption spectrum. A possible explanation for this phenomenon is that the PPID and PBDT blend films maintain the same packing order as in the pure PPID and PBDT domains.
(105) The grazing-incidence wide-angle X-ray scattering (GIWAXS) measurement was employed to investigate the crystallinity of the neat and blend films (
(106) The electron mobility of these four devices also help to understand the structure/property relationship, which was measured by space-charge-limited current method with the device structure is ITO/ZnO/PDIs:PTB7-Th/Ca/Al. The electron mobility was calculated to be 4.4610.sup.4, 3.4810.sup.4, 8.0010.sup.4 and 4.8110.sup.4 cm.sup.2V.sup.1 s.sup.1 for PPID, PPID, PBDT and PBDT, respectively, (Summarized in Table 2). It is clear that the PDI based ones exhibited relatively higher electron mobility than the PDI based compounds, which is likely the consequence of better planarity of substituted PDI moieties and stronger intermolecular interaction of PPID and PBDT as showed in film absorption spectrum.
(107) The active blend films of these devices exhibited similar morphology as characterized by atomic force microscopy (AFM) and transmission electron microscopy (TEM) (
(108) Charge Separation and Recombination Dynamics.
(109) To better understand the OPV performance, the exciton dissociation and carrier collection process, the charge dissociation probability P(E, T) were investigated according to the reported method. As shown in
(110) In summary, four electron deficient compounds were synthesized and investigated as electron acceptor in BHJ OPV cells. Detailed studies revealed that the PPID and PBDT exhibit planarity in the PDI core which benefits the close - stacking. The absorption spectra PPID and PBDT showed the strong tendency to form aggregate due to the strong intermolecular - interaction, which persists in blended films, leading to relatively high electron mobility. The inverted BHJ devices employing PBT7-Th as the donor and PDI-based compounds as acceptor demonstrate superior photovoltaic performance than that using PDI-based derivative as acceptor; an enhancement of 39% was observed. The higher PCE of PPID and PBDT are mainly ascribed to their higher SCLC mobility and the more efficient charge separation at interfaces with PBT7-Th. The results suggest that -substituted PDI derivatives are indeed promising electron acceptors and further exploration is underway to fulfill the potential of PDI-based acceptors.
(111) Synthesis and Properties of Example Compounds
(112) Compound 1
(113)
(114) Compounds 2 and 3
(115)
(116) Compound PID
(117)
(118) Compound PID-2Bpin
(119)
(120) Compound QH0267
(121)
(122) Compound QH0290
(123)
(124) Compound QH0311
(125)
(126) Polymer QH0327
(127)
(128) Compounds TPSE, TPC and TPSI.
(129)
(130) General synthetic procedure for TPC, TPSi and TPSe. Pd.sub.2(dba).sub.3 (0.01 mmol) and P(MeOPh).sub.3 (0.08 mmol) was added to the mixture of compound 1, 2 or BDT-Se-4Bpin (0.1 mmol), compound PDI-Br.sup. (0.42 mmol), THF (10 mL) and 2M K.sub.2CO.sub.3 aqueous solution (2.5 mL) under nitrogen. After refluxing 16 hours, the mixture was poured into methanol. The red precipitate was filtered and purified by column chromatography, using chloroform/dichloromethane= as the eluent.
(131) Compound TPC. TPC was obtained in yield of 71.3%. .sup.1H NMR (400 MHz, CDCl.sub.3) (ppm): 8.77-8.55 (m, 28H), 7.74 (d, J=84 Hz, 8H), 7.57 (d, J=84 Hz, 8H), 5.12-5.22 (Br, 8H), 2.24 (Br, 16H), 1.78 (Br, 16H), 1.31-1.36 (Br, 32H), 0.90 (Br, 48H). MS (MALDI-TOF) C.sub.177H.sub.164N.sub.8O.sub.16 m/z: 2659.30; Found: 2659.05 (M).sup.+ HRMS (ESI) m/z calcd for [C.sub.177H.sub.164N.sub.8O.sub.16.sup.+] 2659.2337, found 2659.2398.
(132) Compound TPSi. TPSi was obtained in yield of 78.2%. .sup.1H NMR (400 MHz, CDCl.sub.3) (ppm): 8.78-8.52 (m, 28H), 8.06 (d, J=80 Hz, 8H), 7.63 (d, J=80 Hz, 8H), 5.12-5.22 (Br, 8H), 2.23 (Br, 16H), 1.81 (Br, 16H), 1.32 (Br, 32H), 0.90 (Br, 48H). MS (MALDI-TOF) C.sub.176H.sub.164N.sub.8O.sub.16Si m/z: 2675.37; Found: 2675.01 (M).sup.+ HRMS (ESI) m/z calcd for [C.sub.176H.sub.164N.sub.8O.sub.16Si+H].sup.+ 2676.2107, found 2676.2161.
(133) Compound TPSe. TPSe was obtained in yield of 76.5%. .sup.1H NMR (400 MHz, CDCl.sub.3) (ppm): 8.75-8.63 (m, 28H), 8.10 (Br, 2H), 7.96 (Br, 2H), 7.59 (Br, 2H), 5.02-5.22 (Br, 8H), 2.25 (Br, 16H), 1.81 (Br, 16H), 1.32-0.86 (Br, 80H). MS (MALDI-TOF) C.sub.170H.sub.154N.sub.8O.sub.16S.sub.2Se.sub.2 m/z: 2786.93; Found: 2787.77 (M+H).sup.+ HRMS (ESI) m/z calcd for [C.sub.170H.sub.154N.sub.8O.sub.16S.sub.2Se.sub.2+H].sup.+ 2787.9446, found 2787.9376.
(134) Compounds TPB6 and TPB6-C.
(135)
(136) Compound TPB6. Pd2(dba)3 (25 mg) and P(MeOPh)3 (75 mg) was added to the mixture of compound BDT-Th-4Bpin (107.3 mg), compound PDI-Br.sup. (437.8 mg), THF (12 mL) and 2M K2CO.sub.3 aqueous solution (3 mL) under nitrogen. After refluxing overnight, the mixture was poured into methanol. The red precipitate was filtered and purified by column chromatography, using dichloromethane/hexane=1:1 as the eluent. 256 mg of pure TPB6 (73.8%) was obtained. .sup.1H NMR (500 MHz, CDCl.sub.3) (ppm): 8.86-8.68 (Br, 33H), 8.57 (Br, 4H), 8.06-8.12 (Br, 4H), 7.61 (Br, 2H), 7.28 (Br, 2H), 5.19-4.71 (Br, 8H), 2.12 (Br, 16H), 1.86 (Br, 16H), 1.18-0.75 (Br, 176H). MS (MALDI-TOF) C.sub.218H.sub.250N.sub.8O.sub.16S.sub.4 m/z: 3363.79; Found: 3364.22 (M+H)+Anal. Calcd for C218H250N8O16S4: C, 77.77%; H, 7.49%; N, 3.33%. Found: C, 77.54%; H, 7.43%; N, 3.19%.
(137) Compound TPB6-C. FeCl.sub.3 (1 g) in 3 mL CH.sub.3NO.sub.2 was added to 6 mL CH.sub.2Cl.sub.2 solution of TPB6 (100 mg) at 0 C. After one hour stirring at room temperature, 10 mL 1 M hydrochloride was added. The organic part was separated and the solvent was removed under reduced pressure. The product was purified by column chromatography, using dichloromethane/hexane=1:1 as the eluent. 61 mg of pure TPB6 (61.1%) was obtained .sup.1H NMR (500 MHz, CDCl.sub.2CDCl.sub.2) (ppm): 11.78 (Br, 2H), 10.18 (Br, 2H), 9.51-9.07 (Br, 18H), 8.76 (Br, 4H), 5.43-4.61 (Br, 8H), 2.06-0.73 (Br, 176H). MS (MALDI-TOF) C.sub.218H.sub.242N.sub.8O.sub.16S.sub.4 m/z: 3355.73; Found: 3355.43 (M)+Anal. Calcd for C218H242N8O16S4: C, 77.96%; H, 7.26%; N, 3.34%. Found: C, 77.65%; H, 7.03%; N, 3.35%.
(138) Electronic and Optical Properties.
(139) The LUMO energy levels were calculated from the cyclic voltammetry (CV). The LUMO energy levels of PPID (QH0267), PBDT (QH0290), TPBDT (QH0311) and PPBDT (QH0327) are 3.84, 3.78, 3.89 and 3.88 eV respectively. The HOMO energy levels of PPID, PBDT, TPBDT and PPBDT are 5.86,
(140) 5.60, 5.71 and 5.60 eV respectively. The HOMO/LUMO energy levels for the four compounds all matches that of PTB7-Th with enough energy offset for both electron and hole transfer to each other. The solution absorption spectra of PPID, PBDT, TPBDT and PPBDT are shown in
(141) Solar Cell Device Characterization
(142) Part 1. Small molecules, PDI-X-PDI, X can be a linker or nothing. Syntheses of the compounds described in
(143) ##STR00071##
(144) Properties of Compounds of Part 1.
(145) TABLE-US-00003 Jsc (mA/cm.sup.2) Voc (V) FF PCE (%) QH0267 10.20 0.78 0.45 3.61 QH0275 1.82 0.17 0.27 0.08 QH0289 4.90 0.54 0.32 0.85 QH0290 12.99 0.81 0.47 4.95 QH0297 4.27 0.63 0.25 0.67 QH02106 8.25 0.79 0.37 2.44 QH02111 5.64 0.73 0.33 1.36 QH02120 11.85 0.85 0.47 4.69 QH02136 8.96 0.80 0.48 3.43 QH02138 5.65 0.73 0.40 1.66 QH02141 7.78 0.77 0.37 2.24
(146) Part 2. Small molecules, (PDI).sub.4X. Syntheses of the compounds is described in
(147) ##STR00072## ##STR00073##
(148) Properties of compounds of Part 2.
(149) TABLE-US-00004 Jsc (mA/cm.sup.2) Voc (V) FF PCE (%) QH0306 11.85 0.83 0.47 4.64 QH0311 16.33 0.79 0.50 6.44 QH0315 12.59 0.82 0.45 4.69 QH0318 7.90 0.81 0.37 2.40 QH0333 14.84 0.78 0.47 5.37
(150) Part 3. Polymers. Synthesis of which is described in
(151) ##STR00074##
(152) Properties of Polymers of Part 3.
(153) TABLE-US-00005 Jsc (mA/cm.sup.2) Voc (V) FF PCE (%) QH0327 5.57 0.65 0.34 1.23 QHpolySe 9.70 0.68 0.43 2.87
(154) General Device Fabrication.
(155) Zinc Oxide Sol-Gel stock solution was prepared by stirring 0.46 g ZnAc.sub.2.Math.2H.sub.2O in 5 ml 2-methoxyethanol and 0.15 ml ethanol amine at 60 C. under ambient condition. Then the solution was cooled to room temperature and subsequently filtered from 0.45 m PTFE film before use. The PTB7-Th and small molecule acceptors were co-dissolved in chlorobenzene and chloronaphthalene (95:5 vol/vol). The overall material concentration was 15 mg ml.sup.1 and the solution was stirred at 110 C. for 12 h under a N.sub.2 atmosphere. ITO glass substrate (Thin Film Devices) was cleaned in water, acetone and isopropylalcohol for 15 min under sonication. Glasses were then exposed to ultraviolet ozone irradiation for 30 min. A thin layer (40 nm) of ZnO sol-gel was spin-coated at 4,000 rpm for 40 sec onto ITO glasses and annealed at 200 C. in ambient condition for 30 min. After treated ZnO surface with 1% ethanolamine solution in methoxyethanol (3000 rpm for 40 s), the substrates were dried in 90 C. oven then transferred into glovebox immediately. Active layers were spin-coated using the as-prepared solutions at 1,000 rpm in a glove box. MoO.sub.3 (7.5 nm) and Al (80 nm) anodes were thermal evaporated in a glove box at a chamber pressure of 2.010.sup.6 torr.
(156) Device Fabrication.
(157) The small molecule were co-dissolved with donor polymers, for example, PTB7-Th in chlorobenzene (CB) with or without 5% (v/v) chloronaphthalene (CN) in the weight ratio of 1:1.5. Donor polymer's concentrations are normally 6 mg/mL.
(158) Indium Tin Oxide (ITO)-coated glass substrates (15 /sq) were cleaned stepwise in detergent, water, acetone, and isopropyl alcohol under ultrasonication for 15 min each and subsequently UV-ozone plasma treated for 30 min. Then a thin layer of ZnO was spin-coated onto ITO surface at 4000 rpm. After being baked at 200 C. for 45 min under air. Then substrates were transferred to nitrogen filled glove box. The donor polymer/acceptor composites layer was then spin-cast from the CB solution to ZnO substrate at 800 to 4000 rpm to achieve optimum thickness. Then a MoO3 layer (5-10 nm) and an Al layer (80 nm) were deposited in sequence under the vacuum of 210.sup.6 torr. The effective area of film was measured to be 0.0314 cm2. The current density-voltage (J-V curves were measured using a Keithley 2420 source-measure unit. The photocurrent was measured under AM 1.5 G illumination at 100 mW/cm2 under the Newport Oriel Sol3A Class AAA Solar Simulators 450 W solar simulator (Model: 94023A, 2 in.2 in. beam size).
(159) To further study properties of tetra-PDI acceptors, QH0311 was used as an acceptor third component in ternary blend organic solar cells. The light absorption in a range of 400-600 nm is complementing the light absorption of the donor material PTB7-Th and HOMO of all three components in the blend form a cascade, which, as previously reported, is beneficial for device performance. Indeed, when incorporated inside an active layer and after optimization we have achieved enhancement in the device performance reaching >10% PCE after optimization. The major enhancement was due to short circuit current density.
(160) TABLE-US-00006 TABLE 3 Solar cell parameters for ternary OPV devices studied Highest J.sub.sc, PCE, PCE, Active layer V.sub.oc, (V) (mA/cm.sup.2) FF, (%) (%) (%) PTB7-Th:PC7.sub.1BM (1:1.5) 0.77 0.01 18.1 0.1 67.9 0.7 9.5 0.1 9.8 PTB7-Th:TPBDT:PC7.sub.1BM 0.77 0.01 18.7 0.2 67.2 0.2 9.8 0.1 10.2 (1:0.05:1.5) PTB7-Th:TPBDT:PC7.sub.1BM 0.76 0.01 19.4 0.2 68.3 0.8 10.1 0.1 10.3 (1:0.1:1.5) PTB7-Th:TPBDT:PC7.sub.1BM 0.77 0.01 19.6 0.4 67.7 0.2 10.1 0.2 10.5 (1:0.2:1.5)
(161) Synthesis of Fully Conjugated A-D-A Ladder Type Molecules and their Electronic Properties.
(162) Synthesis and structural characterization. See
(163) OPV Properties and Active Layer Characterization.
(164) Photovoltaic effects are one of the most important excited state properties in organic molecules. It is strongly influenced by excited energy level, charge separation, and electron transfer processes. Herein, photovoltaic effects of all six novel compounds were evaluated via inverted thin film solar cell devices. The energy levels of the six compounds are suited as electron acceptor; all match well with that of PTB7-Th, an efficient donor polymers for bulk heterojunction organic solar cells 8.69 with enough energy offset for charge separation. Device structure is ITO/ZnO/Active Layer/MoO3/Ag. PTB7-Th was employed as donor polymer with donor/acceptor ratio of 1:2. Active layer thickness was controlled at about 80 nm. Preliminary device results are listed in Table 4 and their I-V curves were shown in
(165) It was found that fused ring acceptor materials exhibit enhanced Voc value. Cyclization of 3r to C3r increased Voc from 0.87 V to 0.94 V, 5r to C5r from 0.89 V to 0.95 V, 9r to C9r from 0.88 V to 0.98 V. This enhancement of Voc correlates with the band gap increase in the acceptor molecules (Table 1). The LUMO energy levels were dominated by PDI moiety and HOMO by BDT ladder unit for the non-fused ring compounds, so they show almost the same LUMO energy and similar Voc with the molecular length increase (
(166) A dilemma of material design in BHJ solar cells is that, to achieve high Voc with a certain donor polymer, acceptor with higher LUMO would be desirable for high Voc value, however at the same time, higher LUMO of acceptor also implies smaller difference between LUMO of donor and LUMO of acceptor, which will reduce driving force for charge separation, and is detrimental to Jsc value. The system described here shows that devices benefits from obvious Voc enhancement without sacrificing their Jsc. The C3r show almost same Jsc with 3r, and C5r and C9r even have much higher Jsc than that of 5r and 9r. C9r device has Jsc of 8.9 mA/cm2 which is 35% higher than Jsc of 9r device (5.4 mA/cm2). The C5r device showed Jsc of 12.5 mA/cm2, which is 50% enhancement compared to 8.4 mA/cm2 of 5r device. Overall, all fused ring acceptors show higher photo conversion efficiency over their non-fused ring counterparts. Without any processing additive, highest efficiency 5.6% was achieved by C5r device which has outstanding Jsc and FF compared to others. PCE as high as 6.1% was achieved by introducing 0.5% DIO as processing additive of C5r device, implying C5r has great potential as efficient electron acceptor after more careful optimization.
(167) TABLE-US-00007 TABLE 4 Solar cell efficiencies of PTB7-Th/conjugated molecules.sup.a. J.sub.sc/ V.sub.oc/ FF .sub.h .sub.e mA/cm.sup.2 V (%) PCE (%) (cm.sup.2/Vs) (cm.sup.2/Vs) 3r 8.96 0.87 0.42 3.26 0.02 4.43 10.sup.4 5.00 10.sup.5 C3r 9.31 0.94 0.43 3.75 0.07 3.08 10.sup.4 1.43 10.sup.5 5r 8.39 0.89 0.40 2.97 0.03 2.67 10.sup.4 3.46 10.sup.5 C5r 12.50 0.95 0.47 5.59 0.10 3.55 10.sup.4 6.21 10.sup.5 (6.06).sup.b 9r 5.38 0.88 0.39 1.85 0.12 2.91 10.sup.4 2.03 10.sup.5 C9r 8.89 0.98 0.43 3.69 0.01 2.16 10.sup.4 1.22 10.sup.5 .sup.aResults are averaged over 10 devices, .sup.bWith 0.5% DIO as an additive
(168) To understand the reason of J.sub.sc enhancement, we measured external quantum efficiencies (EQE) of the devices (
(169) Charge carrier mobility is evaluated by SCLC method. Hole-only devices are fabricated with the structure of ITO/PEDOT/Active layer/MoO.sub.3/Ag, and electron-only devices are fabricated with the structure of ITO/ZnO/Active layer/Ca/Al. Hole mobilities of blend devices are similar and are of magnitude of 10.sup.4 cm.sup.2V.sup.1 s.sup.1. Electron mobility differs greatly between different acceptors. The best performing device, C5r, show highest electron mobility of 6.2110.sup.5 cm.sup.2V.sup.1s.sup.1. With hole mobility of 3.5510.sup.4 cm.sup.2V.sup.1s.sup.1, the hole to electron mobility ratio of C5r blend device is only 5.7. This fairly balanced mobility helps to explain the best J.sub.sc and FF value of C5r device among the six acceptors. This high electron mobility of C5r blend is clearly due to the highly planarity of the molecular structure of C5r.
PROPHETIC EXAMPLES
(170) The present disclosure contemplates the following additional molecular acceptors synthesized by the general reaction schemes shown below.
(171) Pd.sub.2(dba).sub.3 (25 mg) and P(MeOPh).sub.3 (75 mg) is added to a mixture of starting materials, THF (12 mL) and 2M K.sub.2CO.sub.3 aqueous solution (3 mL) under nitrogen. After refluxing overnight, the mixture is poured into methanol. The precipitate will be filtered and purified by column chromatography, using dichloromethane/hexane=1:1 as the eluent.
(172) ##STR00075##
(173) ##STR00076##
(174) Although specific embodiments of the present disclosure are herein illustrated and described in detail, the disclosure is not limited thereto. The above detailed descriptions are provided as exemplary of the present disclosure and should not be construed as constituting any limitation of the disclosure. Modifications will be obvious to those skilled in the art, and all modifications that do not depart from the spirit of the disclosure are intended to be included with the scope of the appended claims.