Polishing head, wafer polishing apparatus using the same, and wafer polishing method using the same

Abstract

A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

Claims

1. A polishing head of a wafer polishing apparatus for polishing one side of a wafer, comprising: a membrane head capable of independently controlling a center control pressure for pressing the center portion of a wafer and an outer periphery control pressure for pressing the outer peripheral portion of the wafer; an outer ring integrally formed with the membrane head so as to constitute the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head, wherein the membrane head has: a single compartment central pressure chamber configured to control the center control pressure; and an outer peripheral pressure chamber provided above the central pressure chamber and configured to control the outer periphery control pressure, a position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber, and a position of an upper end of the outer ring reaches at least a position of an inner upper surface of the central pressure chamber, wherein the membrane head has a circular main surface part constituting a pressing surface against the wafer and an annular side surface part extending upward from the outer peripheral end of the main surface part, the outer ring is integrally formed with the membrane head during formation of the membrane head and secured by bonding to an outer peripheral surface of the side surface part, corners of the outer ring contacting the membrane head are chamfered, and a recess is formed in an outer peripheral surface of the outer ring that does not contact the membrane head.

2. The polishing head according to claim 1, wherein the membrane head further includes: an upper annular flap extending inward in the radial direction from an upper end portion of the side surface part, and a lower annular flap extending inward in the radial direction from an intermediate portion of the side surface part below the upper end portion, the central pressure chamber is a closed space surrounded by the main surface part, the side surface part, and the lower annular flap, the outer peripheral pressure chamber is a closed space surrounded by the lower annular flap, the side surface part, and the upper annular flap, an upper surface of the main surface part constitutes the inner bottom surface of the central pressure chamber, and a bottom surface of the lower annular flap constitutes the inner upper surface of the central pressure chamber.

3. The polishing head according to claim 1 further comprising an inner ring integrally formed with the membrane head during the formation of the membrane head and secured by bonding to an inner peripheral surface of the side surface part.

4. The polishing head according to claim 3, wherein corners of the inner ring contacting the membrane head are preferably chamfered, and a recess is formed in the inner peripheral surface of the inner ring that does not contact the membrane head.

5. The polishing head according to claim 1, wherein an application area of the center control pressure is a circular area within at least 0.85R (R is the radius of the wafer) from the wafer center, and an application area of the outer periphery control pressure is an annular area outside the application area of the center control pressure.

6. The polishing head according to claim 1 further comprising a rigid head to which the membrane head and the retainer ring are attached, wherein the rigid head has a through hole connected to a gap between the side surface part of the membrane head and the outer ring and the rigid head, and a cleaning liquid for cleaning the membrane head is supplied into the gap through the through hole.

7. A wafer polishing apparatus comprising: a rotary platen attached with a polishing cloth; a slurry supply part for supplying slurry onto the rotary platen; and the polishing head for retaining a wafer on the polishing cloth while pressing the wafer, wherein the polishing head includes: a membrane head capable of independently controlling a center control pressure for pressing the center portion of a wafer and an outer periphery control pressure for pressing the outer peripheral portion of the wafer; an outer ring integrally formed with the membrane head so as to constitute the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head, wherein the membrane head has: a single compartment central pressure chamber configured to control the center control pressure; and an outer peripheral pressure chamber provided above the central pressure chamber and configured to control the outer periphery control pressure, a position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber, and a position of an upper end of the outer ring reaches at least a position of an inner upper surface of the central pressure chamber, and wherein the membrane head has a circular main surface part constituting a pressing surface against the wafer and an annular side surface part extending upward from the outer peripheral end of the main surface part, the outer ring is integrally formed with the membrane head during formation of the membrane head and secured by bonding to an outer peripheral surface of the side surface part, corners of the outer ring contacting the membrane head are chamfered, and a recess is formed in an outer peripheral surface of the outer ring that does not contact the membrane head.

8. The wafer polishing apparatus according to claim 7, wherein the membrane head further includes: an upper annular flap extending inward in the radial direction from an upper end portion of the side surface part, and a lower annular flap extending inward in the radial direction from an intermediate portion of the side surface part below the upper end portion, the central pressure chamber is a closed space surrounded by the main surface part, the side surface part, and the lower annular flap, the outer peripheral pressure chamber is a closed space surrounded by the lower annular flap, the side surface part, and the upper annular flap, an upper surface of the main surface part constitutes the inner bottom surface of the central pressure chamber, and a bottom surface of the lower annular flap constitutes the inner upper surface of the central pressure chamber.

9. The wafer polishing apparatus according to claim 7, wherein the polishing head further includes an inner ring integrally formed with the membrane head during the formation of the membrane head and secured by bonding to an inner peripheral surface of the side surface part.

10. The wafer polishing apparatus according to claim 9, wherein corners of the inner ring contacting the membrane head are chamfered, and a recess is formed in the inner peripheral surface of the inner ring that does not contact the membrane head.

11. The wafer polishing apparatus according to claim 7, wherein an application area of the center control pressure is a circular area within at least 0.85R (R is the radius of the wafer) from the wafer center, and an application area of the outer periphery control pressure is an annular area outside the application area of the center control pressure.

12. The wafer polishing apparatus according to claim 7 further comprising a rigid head to which the membrane head and the retainer ring are attached, wherein the rigid head has a through hole connected to a gap between the side surface part of the membrane head and the outer ring and the rigid head, and a cleaning liquid for cleaning the membrane head is supplied into the gap through the through hole.

13. A method for polishing one side of a wafer using a wafer polishing apparatus, the wafer polishing apparatus including: a rotary platen attached with a polishing cloth; a slurry supply part for supplying slurry onto the rotary platen; and the polishing head for retaining a wafer on the polishing cloth while pressing the wafer, wherein the polishing head includes: a membrane head capable of independently controlling a center control pressure for pressing the center portion of a wafer and an outer periphery control pressure for pressing the outer peripheral portion of the wafer; an outer ring integrally formed with the membrane head so as to constitute the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head, wherein the membrane head has: a single compartment central pressure chamber configured to control the center control pressure; and an outer peripheral pressure chamber provided above the central pressure chamber and configured to control the outer periphery control pressure, a position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber, and a position of an upper end of the outer ring reaches at least a position of an inner upper surface of the central pressure chamber, and wherein the membrane head has a circular main surface part constituting a pressing surface against the wafer and an annular side surface part extending upward from the outer peripheral end of the main surface part, the outer ring is integrally formed with the membrane head during formation of the membrane head and secured by bonding to an outer peripheral surface of the side surface part, corners of the outer ring contacting the membrane head are chamfered, and a recess is formed in an outer peripheral surface of the outer ring that does not contact the membrane head, the method comprising: independently controlling the center control pressure and the outer periphery control pressure so as to make pressure distribution on a wafer polishing surface constant; and reducing the outer periphery control pressure as the retainer ring wears.

14. The method according claim 13, wherein the polishing head further includes an inner ring integrally formed with the membrane head during the formation of the membrane head and secured by bonding to an inner peripheral surface of the side surface part, corners of the inner ring contacting the membrane head are chamfered, and a recess is formed in the inner peripheral surface of the inner ring that does not contact the membrane head.

15. A method for polishing one side of a wafer using a wafer polishing apparatus, the method comprising: preparing an outer ring having chamfered inner corners and a recess in an outer peripheral surface thereof; integrally forming the outer ring with a membrane head during a formation of the membrane head, the membrane head having a circular main surface part constituting a pressing surface against the wafer and an annular side surface part extending upward from an outer peripheral end of the main surface part, and the outer ring being secured by bonding to an outer peripheral surface of the side surface part; attaching the membrane head and a contact type retainer ring provided outside the membrane head to a rigid head of a polishing head of the wafer polishing apparatus; setting a wafer on a rotary platen attached with a polishing cloth; retaining and pressing the wafer with the polishing head while providing slurry and rotating the rotary platen and the polishing head; independently controlling a center control pressure and an outer periphery control pressure of the membrane head so as to make pressure distribution on a wafer polishing surface constant; and reducing the outer periphery control pressure as the retainer ring wears.

16. The method according to claim 15 further comprising preparing an inner ring together with the outer ring, the inner ring having chamfered outer corners and a recess in an inner peripheral surface thereof; and integrally forming the inner ring with the membrane head during the formation of the membrane head, the inner ring being secured by bonding to an inner peripheral surface of the side surface part.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a side view schematically illustrating a configuration of a wafer polishing apparatus according to an embodiment of the present invention.

(2) FIG. 2 is a schematic cross-sectional side view illustrating a structure of the polishing head according to a first embodiment.

(3) FIG. 3 is a partial cross-sectional view illustrating in detail a structure of the membrane head of FIG. 2.

(4) FIG. 4 is a partial cross-sectional view illustrating in detail a structure of the membrane head of the polishing head according to a second embodiment.

(5) FIGS. 5A and 5B are graphs illustrating pressure distribution on a wafer polishing surface.

(6) FIGS. 6A and 6B are graphs illustrating a relationship between the thickness of the retainer ring and the polishing surface pressure at the wafer outermost peripheral portion.

(7) FIG. 7 is a graph illustrating a relationship between the thickness of the retainer ring and the polishing surface pressure distribution of the wafer.

(8) FIGS. 8A and 8B are graphs illustrating a wafer back surface pressure distribution.

(9) FIGS. 9A and 9B are graphs illustrating a wafer back surface pressure distribution when the polishing head with outer ring-integrated head shape (see FIG. 4) is used.

MODE FOR CARRYING OUT THE INVENTION

(10) Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(11) FIG. 1 is a side view schematically illustrating a configuration of a wafer polishing apparatus according to an embodiment of the present invention.

(12) As illustrated in FIG. 1, a wafer polishing apparatus 1 has a rotary platen 21 attached with a polishing cloth 22, a slurry supply part 23 for supplying slurry onto the rotary platen 21, and a polishing head 10 that holds a wafer W placed on the polishing cloth 22 while pressing the wafer W. The main surface of the rotary platen 21 has a planar size sufficiently larger than that of the polishing head 10, and the lower surface (pressing surface) of the polishing head 10 faces the main surface of the rotary platen 21. Although one polishing head 10 is provided on the rotary platen 21 in the present embodiment, a plurality of polishing heads 10 may be provided so as to polish a plurality of wafers W simultaneously. By rotating the rotary platen 21 and the polishing head 10 while supplying slurry onto the polishing cloth 22, one side of the wafer W contacting the polishing cloth 22 can be polished.

(13) FIG. 2 is a schematic cross-sectional side view illustrating a structure of the polishing head 10 according to a first embodiment.

(14) As illustrated in FIG. 2, the polishing head 10 has a rotary shaft 11, a rigid head 12 provided to the lower end of the rotary shaft 11, and a contact type retainer ring 14 provided to the bottom surface of the rigid head 12, and a membrane head 16 similarly provided to the bottom surface of the rigid head 12. With this configuration, the polishing head 10 constitutes a wafer pressurizing mechanism that pressurizes the wafer W through the membrane head 16.

(15) The rigid head 12 has a head upper part 12a connected to the rotary shaft 11, a head lower part 12b connected to the head upper part 12a through a drive ring 12d, and a head outer peripheral part 12c. The head upper part 12a is driven into rotation by a spindle mechanism and driven to vertically move by an electric cylinder. The drive ring 12d is made of a metal plate spring and transmits the rotational force of the head upper part 12a to the head lower part 12b and head outer peripheral part 12c. The membrane head 16 is secured to the head lower part 12b, and the retainer ring 14 is secured to the head outer peripheral part 12c.

(16) The retainer ring 14 is a guide member provided at the outer peripheral portion of the bottom surface of the rigid head 12. The retainer ring 14 is configured to be able to press the upper surface of the polishing cloth 22, and the bottom surface of the retainer ring 14 is brought into contact with (grounded to) the polishing cloth 22. The bottom surface of the retainer ring 14 is brought into press contact with the polishing cloth 22, so that horizontal movement of the wafer W can be restricted, thereby making it possible to prevent the wafer from protruding outside the polishing head 10. Further, by contacting the retainer ring 14 to the polishing cloth, it is possible to prevent the gradient of the polishing amount due to the inclination of polishing head 10 and to prevent the wafer outer peripheral portion from being excessively polished by deflection of the polishing cloth.

(17) The bottom surface of the membrane head 16 contacts the entire back surface (upper surface) of the wafer. The membrane head 16 is connected to a not-shown membrane pressurization line, whereby an air pressure is fed inside the membrane head 16. The air pressure is fed inside the membrane head 16 through the membrane pressurization line to expand the membrane head 16, whereby the wafer W is pressed downward. In the membrane head 16, two pressure chambers (central pressure chamber R1 and outer peripheral pressure chamber R2) are formed, and pressure in each pressure chamber is individually controlled by the air pressure fed through the membrane pressurization line provided separately for each pressure chamber. By individually setting the air pressure to be fed to each pressure chamber, an adequate pressing force is applied to the center portion and outer peripheral portion of the wafer W.

(18) The polishing head 10 according to the present embodiment adopts a retainer contacting system and presses the retainer ring 14 against the polishing cloth 22, so that it is possible to prevent the inclination of the polishing head 10 that would occur in a conventional polishing head 10 that does not adopt the retainer contacting system. This can suppress the gradient of the wafer polishing amount distribution. Further, when the retainer ring 14 is not contacted, the polishing cloth 22 outside the wafer W is deflected upward upon sliding movement of the wafer W on the polishing cloth 22 to increase the polishing amount of the corner of the wafer W. However, by using the contact type retainer ring 14, it is possible to prevent concentration of stress on the outer peripheral portion of the wafer W to thereby prevent the corner of the wafer W from being excessively polished.

(19) FIG. 3 is a partial cross-sectional view illustrating in detail a structure of the membrane head 16 of FIG. 2.

(20) As illustrated in FIG. 3, the membrane head 16 is made of a thin rubber material and has a circular main surface part 16a constituting a pressing surface against the wafer W, an annular side surface part 16b extending upward from the outer peripheral end of the main surface part 16a, an upper annular flap 16c extending inward in the radial direction from the upper end portion of the side surface part 16b, and a lower annular flap 16d extending inward in the radial direction from the intermediate portion of the side surface part 16b below the upper end of the side surface part 16b.

(21) The size of the main surface part 16a of the membrane head 16 is substantially the same as the size of the wafer W. Thus, when the diameter of the wafer W is, e.g., 300 mm, the diameter of the main surface part 16a is also 300 mm or slightly larger. A height h.sub.1 of the side surface part 16b is 10 mm to 15 mm, and a height h.sub.2 of the intermediate portion connected with the lower annular flap 16d can be 0.5 h.sub.1 to 0.7 h.sub.1 (mm). The lower annular flap 16d is larger in length than the upper annular flap 16c and, thus, the tip of the lower annular flap 16d protrudes inward in the radial direction from the tip of the upper annular flap 16c.

(22) As described above, the membrane head 16 has the central pressure chamber R1 having a single compartment structure and controlling a pressure at the center of the wafer W and the outer peripheral pressure chamber R2 provided above the central pressure chamber R1 and controlling a pressure at the outer periphery of the wafer W. The central pressure chamber R1 is a closed space surrounded by the main surface part 16a of the membrane head 16, the lower portion of the side surface part 16b, the lower annular flap 16d, and the rigid head 12. The outer peripheral pressure chamber R2 is a closed space surrounded by the upper annular flap 16c of the membrane head 16, the upper portion of the side surface part 16b, the lower annular flap 16d, and the rigid head 12.

(23) An outer ring 17 and an inner ring 18 are secured respectively to the outer peripheral and inner peripheral surfaces of the side surface part 16b of the membrane head 16. The outer ring 17 is a rigid ring bonded to the outer surface (outer peripheral surface) of the side surface part 16b of the membrane head 16 and supports the membrane head 16 from the outside thereof. The inner ring 18 is a rigid ring bonded to the inner surface (inner peripheral surface) of the side surface part 16b of the membrane head 16 and supports the membrane head 16 from the inside thereof. The outer and inner rings 17 and 18 may be made of SUS. The outer and inner rings 17 and 18 are preferably made of the same material.

(24) When the outer ring 17 is not provided, the side surface part 16b of the membrane head 16 can be deflected outward or inward, making it difficult to transmit an outer periphery control pressure Pe to the wafer outer periphery through the side surface part 16b. However, when the outer ring 17 is provided, the outer ring 17 serves as a wall suppressing the deflection of the side surface part 16b to thereby suppress the deformation of the side surface part 16b, thus making it possible to reliably transmit the outer periphery control pressure Pe. Further, by providing the inner ring 18, it is possible to reliably suppress the deformation of the side surface part 16b.

(25) In the present embodiment, the membrane head 16 is integrally formed with the outer ring 17 and inner ring 18. The outer diameter of a part (a lower portion) of the side surface part 16b of the membrane head 16 that contacts the outer ring 17 coincides with the inner diameter of the outer ring 17, and the inner diameter of a part (a lower portion) of the side surface part 16b of the membrane head 16 that contacts the inner ring 18 coincides with the outer diameter of the inner ring 18. Thus, the membrane head 16 is free from tensile stress (strain) due to a difference in dimension from the outer ring 17 or inner ring 18. Further, there is no need to perform work for fitting the outer ring 17 and inner ring 18 to the membrane head 16.

(26) In a conventional structure in which the outer ring 17 and inner ring 18 are fitted to the membrane head 16, in order to enhance adhesion between the outer and inner rings 17 and 18 and the membrane head 16, the outer diameter of the side surface part 16b of the membrane head 16 is designed to be slightly larger than the inner diameter of the outer ring 17, and the inner diameter of the side surface part 16b of the membrane head 16 is designed to be slightly smaller than the outer diameter of the inner ring 18. This makes it very difficult to fit the outer and inner rings 17 and 18 to the membrane head 16. As a result, it is difficult to closely fit the outer and inner rings 17 and 18 without causing twisting of the membrane, and assembly errors are likely to occur. Further, the outer and inner rings 17 and 18 are not bonded to the membrane head 16, so that the positional relationship between the membrane head 16 and the outer and inner rings 17 and 18 may change during use to easily cause a variation in polishing pressure distribution.

(27) On the other hand, the membrane head 16 according to the present embodiment is integrated with the outer and inner rings 17 and 18 when it is completed by a molding process, so that there is no need to perform fitting work, which needs to be done in the conventional technology, and twisting of the membrane head 16 or assembly errors by no means occurs. Further, the outer and inner rings 17 and 18 are secured by bonding to the membrane head 16, so that it is possible to prevent the outer and inner rings 17 and 18 from shifting during polishing to thereby prevent a variation in the polishing pressure distribution.

(28) Further, the membrane head 16 according to the present embodiment is cooled upon its formation in a state of being bonded to the outer ring 17 and is thus applied with no tension as long as pressure is applied from outside. Thus, even when pressure is applied during polishing, it is possible to suppress unintended strain (strain caused by pulling force applied when the membrane head 16 is fitted with the outer ring 17 in a case where the membrane head 16 is separately formed from the outer ring 17) of the membrane head 16 to make it possible to reliably transmit the outer periphery control pressure.

(29) In the present embodiment, the height position of the lower end of the outer ring 17 is substantially the same as the height position of an inner bottom surface S1 of the central pressure chamber R1, and the height position of the upper end of the outer ring 17 is set equal to or higher than the height position of an inner upper surface S2 of the central pressure chamber R1. That is, the outer ring 17 entirely covers the central pressure chamber R1 in the height direction. Thus, it is possible to suppress deflection of the side surface part 16b of the membrane head 16 during pressurization to thereby reliably transmit the outer periphery control pressure Pe to the outer peripheral portion of the wafer W. This makes it possible to reduce waviness of pressure distribution on the wafer back surface. The lower end of the outer ring 17 only needs to reach the position of the inner bottom surface S1 of the central pressure chamber R1 and may be positioned slightly below the inner bottom surface S1. Further, the upper end of the outer ring 17 only needs to reach the position of the inner upper surface S2 of the central pressure chamber R1, and even when the upper end of the outer ring 17 is positioned above the inner upper surface S2, the outer periphery control pressure Pe can be transmitted as long as the upper end of the outer ring 17 is positioned below the outer upper surface of the outer peripheral pressure chamber R2.

(30) The corners of the outer and inner rings 17 and 18 contacting the membrane head 16 are preferably chamfered. Further, a recess is preferably formed in the outer peripheral surface of the outer ring 17 and in the inner peripheral surface of the inner ring 18. By chamfering the corners of the outer and inner rings 17 and 18, adhesion between the membrane head 16 and the outer and inner rings 17 and 18 can be enhanced. Further, by forming the recess in the outer peripheral surface of the outer ring 17 and in the inner peripheral surface of the inner ring 18, the outer and inner rings 17 and 18 can be easily attached to a molding die to enhance the handling of the outer and inner rings 17 and 18.

(31) In the present embodiment, the polishing pressure at the outer peripheral portion of the wafer W is controlled independently of the polishing pressure at the center portion of the wafer W. By changing the outer periphery control pressure Pe in accordance with a variation in the thickness of the outer peripheral portion of the wafer W and a change, due to wear, in the thickness of the retainer ring 14 retaining the side surface of the wafer W, the polishing pressure to the outer peripheral portion of the wafer W can be adjusted.

(32) An application area Dc of a center control pressure Pc is a circular area within at least 0.85R (R is the radius of the wafer W) from the center of the wafer W and, preferably, a circular area within 0.93R from the center of the wafer W. On the other hand, an application area De of the outer periphery control pressure is an annular area outside the application area Dc of the center control pressure, and the annular area preferably ranging from 0.85R to 1R and, more preferably, 0.93R to 1R. In this manner, the polishing pressure at a large part of the wafer W is controlled by the center control pressure Pc, and the polishing pressure at the outer peripheral portion of the wafer W is controlled by the outer periphery control pressure Pe, whereby it is possible to uniformly polish the wafer surface.

(33) In the retainer contacting system, the protruding amount of the main surface part 16a of the membrane head 16 in the downward direction from the lower surface of the retainer ring 14 increases as the retainer ring 14 wears, so that pressing force against the wafer W becomes large, with the result that the polishing amount of the wafer W, particularly, the polishing amount of the outer peripheral portion of the wafer W becomes larger than expected. However, by reducing the outer periphery control pressure Pe in accordance with the wear of the retainer ring 14, it is possible to make the polishing amount distribution constant.

(34) In the present embodiment, the lower annular flap 16d and upper annular flap 16c preferably extend inward in the radial direction. It is possible for the lower annular flap 16d and upper annular flap 16c to extend outward in the radial direction; however, in this case, when the retainer ring 14 is pressurized from the upper side of the polishing head 10, a retainer contact pressure Pr varies under the influence of the outer periphery control pressure Pe, and the outer periphery control pressure Pe varies under the influence of the retainer contact pressure Pr. On the other hand, when the lower annular flap 16d and upper annular flap 16c extend inward in the radial direction, it is possible to prevent one of the outer periphery control pressure Pe and retainer contact pressure Pr from having influence on the other one of them.

(35) Further, when the lower annular flap 16d and upper annular flap 16c extend inward in the radial direction, it is possible to increase a gap D between the side surface part 16b of the membrane head 16 and a part of the rigid head 12 above the retainer ring 14 as much as possible. In this case, the rigid head 12 preferably has a through hole 12e connected to the gap D between the side surface part 16b of the membrane head 16 and outer ring 17, and the rigid head 12, and a cleaning liquid for cleaning the membrane head 16 is preferably supplied into the gap D through the through hole 12e. As the polishing continues, slurry sticks to the surface of the retainer ring 14, so that cleaning needs to be performed to remove the slurry. In the present embodiment, cleaning water is injected into the gap D between the side surface part 16b of the membrane head 16 and the rigid head 12 to clean the retainer ring 14, whereby the slurry can be removed. Thus, it is possible to suppress inconvenience in which coarse particles formed due to peeling off of abrasive grains that have been entered the gap D, stuck, and agglomerated together may scratch the wafer surface.

(36) As described above, the wafer polishing apparatus 1 according to the present embodiment has a two-zone membrane head with a contact type retainer capable of independently pressurizing the center portion of the wafer W and outer peripheral portion thereof. The outer ring 17 retaining the side surface part 16b of the membrane head 16 supports a wide area from the lower end of the side surface part 16b to the upper end thereof, thus making it possible to increase the control width of the outer periphery control pressure by suppressing deformation of the side surface part 16b of the membrane head 16 during pressurization. Thus, it is possible to reduce waviness of the polishing pressure at the wafer outer peripheral portion to thereby enhance the flatness of the wafer polishing surface. Further, the outer and inner rings 17 and 18 are integrally formed with the membrane head 16 during formation of the membrane head 16, thus eliminating the need to perform work for fitting the outer and inner rings 17 and 18 to the membrane head 16, which in turn can prevent the occurrence of assembly errors or a variation in the pressure distribution on the wafer back surface due to shifting of the outer and inner rings 17 and 18 during polishing.

(37) FIG. 4 is a partial cross-sectional view illustrating in detail a structure of the membrane head 16 of the polishing head 10 according to a second embodiment.

(38) As illustrated in FIG. 4, the polishing head 10 according to the present embodiment is featured in that the inner ring 18 (see FIG. 3) is omitted. Other configurations are the same as those of the polishing head 10 according to the first embodiment. When the side surface part 16b of the membrane head 16 is supported by only the outer ring 17, retaining force for the side surface part 16b of the membrane head 16 is reduced; however, the strain of the outer peripheral portion of the membrane head 16 caused by correcting the deformation of the side surface part 16b of the membrane head 16 can be reduced. This can suppress a variation in the back surface pressure distribution at the wafer outer peripheral portion.

(39) While the preferred embodiments of the present invention have been described, the present invention is not limited to the above embodiments, and various modifications may be made within the scope of the present invention, and all such modifications are included in the present invention.

(40) For example, although the outer and inner rings 17 and 18 are bonded to the side surface part 16b of the membrane head 16 in the above embodiments, it is possible to omit the side surface part 16b itself. In this case, the main surface part 16a of the membrane head 16 for applying the center control pressure Pc and the upper and lower annular flaps 16c and 16d of the membrane head 16 for applying the outer periphery control pressure Pe are constituted by separate membrane members. That is, a membrane member for generating the center control pressure Pc and a membrane member for generating the outer periphery pressure Pe are connected together through a rigid ring.

Examples

(41) <Considerations about Influence of Outer Periphery Control Pressure on Polishing Surface Pressure Distribution>

(42) The pressure distribution of the polishing head according to the present invention against the polishing surface was evaluated by simulation. The object to be polished was a silicon wafer having a diameter of 300 mm, the thickness of the retainer ring was set to 5 mm, the center control pressure Pc was set to 15 kPa, and the change range of the outer periphery control pressure Pe was set to 0 kPa to 40 kPa. The results are shown in FIGS. 5A and 5B.

(43) FIGS. 5A and 5B are graphs illustrating pressure distribution on a wafer polishing surface. FIG. 5A illustrates a case where an inner and outer ring-integrated head shape (see FIG. 3) is used, and FIG. 5B illustrates a case where an outer ring-integrated type head shape (see FIG. 4) is used. In the graphs of FIGS. 5A and 5B, the horizontal axis represents the distance (mm) from the wafer center, and the vertical axis represents the wafer polishing surface pressure (kPa).

(44) As is clear from FIGS. 5A and 5B, the wafer polishing surface pressure at the center portion within a radius of 120 mm or less (0 mm to 120 mm) from the wafer center is about 15 kPa which is substantially the same as the center control pressure Pc. On the other hand, the polishing pressure at the outer peripheral portion outside a radius of 120 mm or more (120 mm to 150 mm) from the wafer center increases with increasing outer periphery control pressure Pe and changes in a wide range of 15±10 kPa. This reveals that the wafer polishing surface pressure distribution can be made substantially constant by setting the outer periphery control pressure Pe to about 25 kPa. Thus, it is found that, according to the two-zone membrane with the contact type retainer of the present invention, the polishing surface pressure at the wafer center portion and the polishing surface pressure at the wafer outer peripheral portion can be independently controlled and that the shape of the wafer polishing surface can be controlled by controlling the outer periphery control pressure Pe.

(45) <Considerations about Influence of Thickness of Retainer Ring on Polishing Surface Pressure>

(46) The polishing surface pressure at the outermost peripheral portion positioned at a radius of 149 mm from the wafer center was evaluated by simulation where the polishing head according to the present invention was used to perform wafer polishing. The results are shown in FIGS. 6A and 6B.

(47) FIGS. 6A and 6B are graphs illustrating a relationship between the thickness of the retainer ring and the polishing surface pressure at the wafer outermost peripheral portion. FIG. 6A illustrates a case where an inner and outer ring-integrated head shape (see FIG. 3) is used, and FIG. 6B illustrates a case where an outer ring-integrated type head shape (see FIG. 4) is used. In the graphs of FIGS. 6A and 6B, the horizontal axis represents the thickness (mm) of the retainer ring, and the vertical axis represents the polishing surface pressure (kPa) at the wafer outermost peripheral portion.

(48) As is clear from FIGS. 6A and 6B, the polishing surface pressure at the wafer outermost peripheral portion increases as the thickness of the retainer ring decreases, and the larger the outer periphery control pressure Pe is, the larger the increasing rate of the polishing surface pressure at the wafer outermost peripheral portion becomes. The thickness of the retainer ring gradually decreases due to wear and, thus, the polishing surface pressure at the wafer outermost peripheral portion gradually increases; however, a gradual reduction in the outer periphery control pressure Pe allows suppression of an increase in the polishing surface pressure at the wafer outermost peripheral portion, whereby the polishing surface pressure at the wafer outermost peripheral portion can be maintained constant.

(49) The wafer polishing surface pressure distribution obtained when the outer periphery control pressure Pe was adjusted so as to maintain the pressure on the entire wafer polishing surface constant (at 15 kPa) on the assumption that the thickness of the retainer ring decreases from 5.6 mm to 5.0 mm and the wafer polishing surface pressure distribution obtained when such adjustment was not made are shown below. Further, the wafer polishing surface pressure distribution before wear of the retainer ring is also shown.

(50) FIG. 7 is a graph illustrating a relationship between the thickness of the retainer ring and the polishing surface pressure distribution of the wafer. In the graph of FIG. 7, the horizontal axis represents the distance (mm) from the wafer center, and the vertical axis represents the wafer polishing surface pressure (kPa).

(51) As illustrated in FIG. 7, when the thickness of the retainer ring is 5.6 mm, and the outer periphery control pressure Pe is 32 kPa, the in-plane distribution of the wafer polishing surface pressure is substantially constant (about 15 kPa). Thereafter, when the thickness of the retainer ring decreases to 5.0 mm due to wear while the outer periphery control pressure Pe is not changed and maintained at 32 kPa, the polishing surface pressure at the wafer outer peripheral portion increases up to about 19 kPa. On the other hand, when the outer periphery control pressure Pe is reduced to 25. 5 kPa, the polishing surface pressure at the wafer outer peripheral portion does not increase, and the in-plane distribution of the polishing surface pressure is maintained substantially constant. Thus, it is confirmed that the wafer polishing surface pressure can be adjusted by changing the outer periphery control pressure Pe.

(52) <Evaluation on Wafer Back Surface Pressure Distribution>

(53) Next, a change in the pressure distribution of the membrane head against the wafer back surface when the center control pressure Pc was set to 15 kPa, and the outer periphery control pressure Pe was changed in the range of 0 kPa to 40 kPa was evaluated by simulation using an example and a comparative example. As the membrane head of example, a two-zone membrane head with a contact type retainer illustrated in FIGS. 2 and 3 was used, and the thickness of the retainer ring was set to 5.0 mm. As the membrane head of comparative example, a two-zone membrane head with a non-contact type retainer was used, in which the outer ring retained only the upper half of the side surface part of the membrane.

(54) FIGS. 8A and 8B are graphs illustrating a wafer back surface pressure distribution. FIG. 8A illustrates a case where an inner and outer ring-integrated head shape (see FIG. 3) is used, and FIG. 8B illustrates a case where an outer ring-integrated type head shape (see FIG. 4) is used. In the graphs of FIGS. 8A and 8B, the horizontal axis represents the distance (mm) from the wafer center, and the vertical axis represents the wafer back surface pressure (kPa).

(55) As illustrated in FIGS. 8A and 8B, in the conventional membrane head according to Comparative Example, pressure is constant in the area within a radius of 142 mm from the center, while pressure becomes extremely high at the outermost peripheral portion positioned at a radius of 148 mm to 149 mm from the wafer center. On the other hand, in the membrane head according to Example, such an extreme increase in the pressure does not occur. Further, an unpressurized area occurs in the range of 141 mm to 149 mm in radius from the wafer center when the outer periphery control pressure Pe is equal to or less than 10 kPa; however, the unpressurized area does not occur when the Pe is equal to more than 20 kPa. Thus, it is found that by changing the outer periphery control pressure Pe, it is possible to eliminate the unpressurized area at the wafer outer peripheral portion and to control the magnitude of the waviness of the back surface pressure distribution occurring at the wafer outer peripheral portion.

(56) Further, as can be seen from the comparison between the results illustrated in FIGS. 8A and 8B, the peak of the waviness of the back surface pressure is closer to the wafer center when the inner and outer ring-integrated head shape (see FIG. 3) of FIG. 8A is used than when the outer ring-integrated head shape (see FIG. 4) of FIG. 8B is used.

(57) FIGS. 9A and 9B are graphs illustrating the wafer back surface pressure distribution when the polishing head with outer ring-integrated head shape (see FIG. 4) is used. FIG. 9A illustrates a case (like FIG. 4) where the outer ring has a vertical length long enough to cover the entire surface of the side surface part of the membrane head, and FIG. 9B illustrates a case where the outer ring has a short vertical length and thus covers only the upper half of the side surface part of the membrane head. In the graphs of FIGS. 9A and 9B, the horizontal axis represents the distance (mm) from the wafer center, and the vertical axis represents the wafer back surface pressure (kPa).

(58) As illustrated in FIG. 9B, when the vertical length of the outer ring is short, the extreme value/inflection point and the peak of waviness of the wafer back surface pressure become high. On the other hand, as illustrated in FIG. 9A, when the vertical length of the outer ring is long, the extreme value/inflection point and the peak of waviness of the wafer back surface pressure become low. Thus, it is confirmed that the wider the retaining range of the side surface part of the membrane head by the outer ring, the more the deformation of the body and bottom surface of the membrane head is suppressed.

DESCRIPTION OF REFERENCE NUMERALS

(59) 1 Wafer polishing apparatus 10 Polishing head 11 Rotary shaft 12 Rigid head 12a Head upper part 12b Head lower part 12c Head outer peripheral part 12d Drive ring 12e Through hole (cleaning hole) 14 Retainer ring 16 Membrane head 16a Main surface part of membrane head 16b Side surface part of membrane head 16c Upper annular flap of membrane head 16d Lower annular flap of membrane head 17 Outer ring 18 Inner ring 21 Rotary platen 22 Polishing cloth 23 Slurry supply part D Gap Dc Center control pressure application area De Outer periphery control pressure application area Pc Center control pressure Pe Outer periphery control pressure Pr Retainer contact pressure R1 Central pressure chamber R2 Outer peripheral pressure chamber S1 Inner bottom surface of central pressure chamber S2 Inner upper surface of central pressure chamber W Wafer