Quantum cascade laser

Abstract

The invention relates to a quantum cascade laser (300) comprising a gain region (102) inserted between two optical confinement layers (104.sub.1, 104.sub.2), said gain region (102) having an electron input into the gain region (102) and an electron output from said gain region (102) characterized in that said laser comprises a hole-blocking area (304) on the side of said electron output.

Claims

1. A quantum cascade laser comprising a gain region inserted between two optical confinement layers, said gain region having an electron input into the gain region and an electron output from said gain region, characterized in that said laser comprises a hole-blocking area on the side of said electron output, said hole-blocking area having a valence-band energy profile, which decreases to reach a local minimum, then increases, in the direction going from the electron input into the gain region to the electron output from the gain region.

2. The laser according to claim 1, characterized in that, downstream of the local minimum, in the direction going from the electron input to the electron output, the valence-band energy in the hole-blocking area increases by a value greater than or equal to the thermal energy at ambient temperature, in particular greater than or equal to 25 meV.

3. The laser according to claim 1, characterized in that the hole-blocking area has an effective forbidden band energy which increases, reaches a maximum value, then decreases in the direction going from the electron input into the gain region to the electron output from the gain region.

4. The laser according to claim 1, characterized in that the gain region and the hole-blocking area each contain a stack of well layers and barrier layers, a thickness of at least one well layer of the hole-blocking area being less than a thickness of at least one well layer in the gain region.

5. The laser according to claim 4, characterized in that the thickness of the well layers in the hole-blocking area decreases to reach a minimum then increases, in the direction going from the electron input into the gain region to the electron output from the gain region.

6. The laser according to claim 4, characterized in that the thickness of at least one well layer of the hole-blocking area is less than or equal to 80%, and more particularly 50%, of the thickness of at least one well layer of the gain region.

7. The laser according to claim 1, characterized in that the gain region and the hole-blocking area each contain a stack of well layers and barrier layers, a thickness of at least one barrier layer of the hole-blocking area being greater than a thickness of at least one barrier layer in the gain region.

8. The laser according to claim 7, characterized in that the thickness of the barrier layers in the hole-blocking area increases to reach a maximum then decreases, in the direction going from the electron input into the gain region to the electron output from the gain region.

9. The laser according to claim 7, characterized in that the thickness of at least one barrier layer of the hole-blocking area is greater than or equal to 150%, and more particularly greater than or equal to 200%, of the thickness of at least one barrier layer in the gain region.

10. The laser according to claim 1, characterized in that the gain region contains a stack of well layers and barrier layers, and in that in the hole-blocking area at least one, in particular each, well layer or barrier layer is of N-doped type.

11. The laser according to claim 1, characterized in that the gain region, respectively the hole-blocking area, is formed by a stack of several well layers and several barrier layers alternately, and in that: each well layer is produced from Indium Arsenide; and/or each barrier layer is produced from Aluminium Antimonide (AlSb).

12. The laser according to claim 1, characterized in that the gain region comprises a stack of well layers and barrier layers, the hole-blocking area being formed by a sub-assembly of said stack of layers on the side of the electron output.

13. The laser according to claim 1, characterized in that the hole-blocking area is formed in the form of a stack of layers, independent of the gain region.

14. The laser according to claim 1, characterized in that the hole-blocking area is formed in the form of a single layer, produced from an alloy, a composition of which varies continuously.

Description

DESCRIPTION OF THE FIGURES AND EMBODIMENTS

(1) Other advantages and characteristics of the invention will become apparent on examination of the detailed description of an embodiment which is in no way limitative, and the attached drawings, in which:

(2) FIG. 1 is a diagrammatic representation of an embodiment of a quantum cascade laser of the state of the art;

(3) FIG. 2 is a diagrammatic representation of the band structure of the laser in FIG. 1.

(4) FIG. 3 is a diagrammatic representation of an embodiment of a quantum cascade laser according to the invention; and

(5) FIG. 4 is a diagrammatic representation of the band structure of the laser in FIG. 3.

(6) It is well understood that the embodiments which will be described hereinafter are in no way limitative. Variants of the invention can be considered comprising only a selection of the characteristics described hereinafter, in isolation from the other characteristics described, if this selection of characteristics is sufficient to confer a technical advantage or to differentiate the invention with respect to the state of the prior art. This selection comprises at least one, preferably functional, characteristic without structural details, or with only a part of the structural details if this part alone is sufficient to confer a technical advantage or to differentiate the invention with respect to the state of the prior art.

(7) In the figures, the elements common to several figures retain the same reference.

(8) FIG. 1 is a diagrammatic representation of an embodiment of a quantum cascade laser of the state of the art.

(9) The laser 100 shown in FIG. 1 contains a gain region 102 placed between two confinement layers 104.sub.1 et 104.sub.2, made from a material having a lower optical index than that of the gain region, for example of N-doped InAs type, also called cladding, forming an optical waveguide.

(10) The gain region 102 and each confinement layer 104.sub.1 and 104.sub.2 has a thickness of the order of several microns, typically 2 to 5.

(11) The laser 100 can also contain, between the gain region 102 and each confinement layer, respectively 104.sub.1 and 104.sub.2, a layer, respectively 106.sub.1 and 106.sub.2, having a very low optical absorption, also called spacer, produced for example with lightly doped InAs.

(12) Each spacer 106.sub.1 and 106.sub.2 has a thickness of the order of several m, typically 1 to 3.

(13) The gain region 102 is formed by stacks of pairs of layers comprising one well layer 108; and one barrier layer 110.sub.i, with 1<i<n, with n an integer, for example equal to 400. Each well layer 108 is produced from Indium Arsenide (InAs) and each barrier layer 110 is produced from AlSb.

(14) Each well layer 108 has a thickness of the order of 8 nm. Of course, the thickness of the well layers in the gain region 102 can be variable.

(15) In addition, each barrier layer 110 has a thickness of the order of 0.5 nm. Of course, the thickness of the barrier layers in the gain region 102 can be variable.

(16) In operation, an electric current is pumped in a direction perpendicular to the layers 104-110. In the example shown in FIG. 1, the current 112 enters the laser on the side of the layers 104.sub.2 and 106.sub.2, and exits the laser 100 on the side of the layers 104.sub.1 and 106.sub.1. As a result, the charge carriers, i.e. the electrons, enter the gain region 102 on the side of the layers 104.sub.1 and 106.sub.1, and exit the gain region 102 on the side of the layers 104.sub.2 and 106.sub.2.

(17) FIG. 2 is a diagrammatic representation of the structure of the band of energies of the laser in FIG. 1, in operation.

(18) The y axis gives the energy level with respect to distance, corresponding to the thickness of the gain region 102, the 60 nm point corresponding to the electron input into the gain region 102, i.e. the first layer 108.sub.1 of the gain region 102, and the distance 420 nm corresponding to the electron output in the gain region 102, i.e. the last layer 110.sub.n of the gain region.

(19) Thus, it is noted that the energy profile 202 of the valence band is a monotonic and decreasing profile, if the energy discontinuities of the valence band in the barrier layers 110.sub.i are excluded. The same observation applies to the energy profile 204 of the conduction band.

(20) Under these conditions, a population of holes appears in the valence band, on the side of the electron output, i.e. on the side of the layer 110.sub.n, by inter-band thermal generation or impact ionization. The holes generated then pass through the valence band of the electron output to the electron input, which causes the occurrence of a hole current represented by the arrow 206 in FIG. 2.

(21) This hole current 206 is a parasitic current and degrades the performance of the quantum cascade laser 100.

(22) FIG. 3 is a diagrammatic representation of a non-limitative embodiment of a laser according to the invention.

(23) The laser 300 according to the invention comprises all the elements of the laser 100 in FIG. 1.

(24) In particular, the laser 300 comprises the gain region 102 of the laser 100 in FIG. 1.

(25) The laser 300 comprises in addition to the gain region 102, a hole-blocking area 304, placed between the gain region 102 and the spacer 106.sub.2, the gain region 102 and the hole-blocking area forming, both, an area 302, located between the spacers 106.sub.1 and 106.sub.2. The purpose of this hole-blocking area 304 is to block the propagation of holes in the valence band from the electron output from the area 302 to the electron input of the gain region 102.

(26) The hole-blocking area 304 is formed by stacks of pairs of layers comprising one well layer 306.sub.i and one barrier layer 308.sub.i, with 1<i<k, with k an integer, for example equal to 30. Each well layer 306.sub.i is produced from Indium Arsenide (InAs) and each barrier layer 308.sub.i is produced from AlSb.

(27) In addition, the well layers 306.sub.i of the hole-blocking area 304 can have a thickness which: decreases progressively from a value, called starting value, corresponding to the thickness of a well layer 108.sub.i in the gain region 102 to reach a value, called minimum value, corresponding, for example, to one half of the starting value; then, increases progressively starting from said minimum value to reach a value greater than or equal to said starting value.

(28) In particular, the first well layer 306.sub.1 of the hole-blocking area 304 has a thickness equal to the last well layer 108.sub.n of the gain region 102, for example of the order of 8 nm. In addition, the last well layer 306.sub.k of the hole-blocking area 304 has a thickness greater than or equal to that of the first well layer 306.sub.1 of the hole-blocking area 304. Between the first well layer 306.sub.1 and the last well layer 306.sub.k of the hole-blocking area 304, the thickness of the well layers 306.sub.i decreases to reach a minimum value, for example 4 nm, for example at a well layer located in the centre of the hole-blocking area 304, then increases to reach a value greater than or equal to the thickness of the first well layer 306.sub.1 of the hole-blocking area 304, for example a value of the order of 8 nm, at the last well layer 306.sub.k of the hole-blocking area 304.

(29) In addition, or alternatively, the barrier layers 308.sub.i of the hole-blocking area 304 can have a thickness which: increases progressively from a value, called starting value, corresponding to the thickness of a barrier layer 110.sub.i in the gain region 102 to reach a value, called maximum value, corresponding, for example, to double the starting value; then, decreases progressively starting from said maximum value to reach a value at most equal to the starting value.

(30) In particular, the first barrier layer 308.sub.1 of the hole-blocking area 304 has a thickness equal to the last barrier layer 110.sub.n of the gain region 102, for example of the order of 0.5 nm. In addition the last barrier layer 308.sub.k of the hole-blocking area 304 has a thickness less than or equal to that of the first barrier layer 308.sub.1 of the hole-blocking area 304. Between the first barrier layer 308.sub.1 and the last barrier layer 308.sub.k of the hole-blocking area 304, the thickness of the barrier layers 308.sub.i increases to reach a maximum value, for example 1 nm, for example at the barrier layer 308.sub.i located in the centre of the hole-blocking area 304, then decreases to reach a value less than or equal to the thickness of the first barrier layer 308.sub.1 of the hole-blocking area 304, for example a value of the order of 0.5 nm, at the last barrier layer 308.sub.k of the hole-blocking area 304.

(31) In addition, each well layer 306.sub.i or each barrier layer 308.sub.i of the hole-blocking area can be of N-doped type. The doping is maximum in the central part of the hole-blocking area 304.

(32) In the example which has just been described, the thickness of the well layers and the barrier layers of the hole-blocking area varies. Of course, the invention is not limited to this embodiment. For example, it is possible to envisage a laser according to the invention in which only the thickness of the well layers, respectively of the barrier layers, of the hole-blocking area has the variation described above.

(33) Moreover in the example which has just been described, the hole-blocking area is formed by a stack of well layers and barrier layers. Of course, the invention is not limited to this embodiment. For example, it is possible to envisage a hole-blocking area in the form of a single layer, produced from an alloy the composition of which varies continuously. Such a hole-blocking area can be produced by an alloy of well material, for example Indium Arsenide (InAs), and of barrier material, for example Aluminium Antimonide (AlSb), the ratio of which (content of well material)/(content of barrier material) decreases progressively, from a starting value, to reach a minimum value, then increases to reach an end value, greater than or equal to said starting value.

(34) FIG. 4 is a diagrammatic representation of the structure of the bands of energies of the laser in FIG. 3, in operation.

(35) The y axis gives the energy level with respect to distance, corresponding to the thickness of the region 302, the 60 nm point corresponding to the electron input into the gain region 102, i.e. at the first layer 108.sub.1 of the gain region 102, and the 420 nm point corresponding to the barrier layer 110.sub.n and to the well layer 306.sub.1, i.e. to the start of the hole-blocking area 304. The 560 point nm corresponds to the end of the hole-blocking area 304, and thus to the end of the region 302.

(36) Thus, if the energy band discontinuities in the barrier layers 110.sub.i and 308.sub.i are excluded, it is noted that the energy profile 402 of the valence band: decreases to reach a local minimum 406 at a central part of the hole-blocking area 304, and in particular at the 470 nm point; then increases to reach the energy level corresponding to the start of the hole-blocking area.

(37) The energy increase after the local minimum 406 is of the order of 250 meV in the example shown in FIG. 4.

(38) In other words, the effective forbidden band energy is progressively increased, starting from the effective forbidden band energy of the output from the gain region 102, to reach a maximum value 408, then progressively decreases to a value close to the forbidden band of the adjacent spacer region 106.sub.2.

(39) Therefore, in operation, the local minimum 406 of the energy profile 402 of the valence band, respectively the local maximum of the effective forbidden band energy 408, constitutes a potential barrier in the valence band, which opposes the propagation of holes generated in said valence band on the side of the electron output from the region 302, i.e. on the side of the layer 308.sub.k.

(40) The holes generated in the valence band remain blocked downstream of said local minimum 406 of the energy profile 402 of the valence band, respectively of the local maximum 408 of the effective forbidden band energy. In other words, the holes generated in the valence band remain blocked between said minimum, respectively said maximum, and the electron output from the region 302.

(41) Of course, the invention is not limited to the examples detailed above.

(42) In particular, other materials can be used for the well layers and the barrier layers. Similarly, the number of layers, the dimensions of the layers and the energy values indicated are in no way limitative