Sensor element and method for producing a sensor element

Abstract

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element for temperature measurement includes a ceramic carrier and at least one NTC layer printed on the carrier, wherein the NTC layer covers at least part of a surface of the carrier, and wherein the sensor element is designed for wireless contacting.

Claims

1. A sensor element for temperature measurement comprising: a ceramic carrier; and at least one NTC layer printed on the carrier, wherein the NTC layer covers at least part of a surface of the carrier, wherein a resistance of the NTC layer is determined by a number of printing operations, wherein the sensor element is designed for wireless contacting, wherein the sensor element is an NTC thick-film sensor, wherein the NTC layer has a recess, and wherein the recess is setting a predetermined resistance value of the NTC layer.

2. The sensor element according to claim 1, further comprising at least two electrodes, wherein the electrodes are arranged on the NTC layer, and wherein the electrodes are spatially separated from one another by a free region.

3. The sensor element according to claim 2, wherein each electrode has at least one sputtered layer.

4. The sensor element according to claim 3, wherein the sputtered layer is arranged directly on the NTC layer.

5. The sensor element according to claim 2, wherein each electrode has at least one printed-on layer.

6. The sensor element according to claim 5, wherein the printed-on layer is printed directly on the NTC layer.

7. The sensor element according to claim 1, wherein the NTC layer completely covers a first surface of the carrier.

8. A method for producing the sensor element according to claim 1, the method comprising: providing a ceramic carrier material; at least partially printing the carrier material with an NTC paste to form the NTC layer, wherein printing comprises performing at least one printing operation directly on the carrier material; sintering the carrier material and the NTC paste in a common sintering operation; and sputtering thin-film electrodes on the NTC layer, wherein the resistance of the NTC layer is determined by a number of printing operations.

9. The method according to claim 8, wherein a thickness of the NTC layer is set by the number of printing operations.

10. The method according to claim 8, further comprising partially removing the NTC layer by laser ablation so that the predetermined resistance value is set.

11. A method comprising: providing a ceramic carrier material; at least partially printing a surface of the carrier material with an NTC paste to form an NTC layer, wherein printing comprises performing at least one printing operation directly on the surface of the carrier material, and wherein a resistance of the NTC layer is determined by a number of printing operations; sintering the carrier material and the NTC paste in a common sintering operation; partially removing the NTC layer so that a predetermined resistance value is set; and sputtering thin-film electrodes on the NTC layer.

12. The method according to claim 11, wherein a thickness of the NTC layer is set by the number of printing operations.

13. The method according to claim 11, wherein partially removing the NTC layer comprises removing the NTC layer by laser ablation.

14. The method according to claim 11, wherein partially removing the NTC layer comprises forming a recess.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The drawings described below should not be regarded as true to scale. Rather, for better representation, individual dimensions may be shown as increased or reduced in size or even distorted.

(2) Elements that are the same as one another or perform the same function are provided with the same designations.

(3) FIG. 1 shows a sensor element in a first embodiment;

(4) FIG. 2 shows the sensor element in a further embodiment;

(5) FIG. 3 shows the sensor element in a further embodiment; and

(6) FIG. 4 shows the sensor element in a further embodiment.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

(7) FIG. 1 shows a sensor element 1, in particular a sensor chip. The sensor element 1 is preferably designed for measuring a temperature. The sensor element 1 comprises a ceramic sensor material. The ceramic sensor material takes the form of an NTC layer 3. The sensor element 1 is preferably an NTC thick-film sensor.

(8) The NTC layer may have a thickness of between 5 m and 200 m. Preferably, the layer thickness lies between 10 m and 100 m.

(9) The sensor material is an NTC ceramic. For example, the ceramic has a perovskite structure. In particular, the ceramic may be based on the system YCaCrAlO with various dopings. Such a sensor element 1 is particularly suitable for high-temperature applications. Alternatively, in particular in the case of lower application temperatures, the sensor element 1 may comprise a ceramic with a spinel structure. For example, the ceramic may be based on the system NiCoMnO with various dopings.

(10) The NTC thick-film sensor consists of a ceramic carrier 2 onto which the NTC layer 3 is printed. Serving as the carrier material is a ceramic substrate on the basis of, for example, Al.sub.2O.sub.3, ZrO.sub.2, ATZ or ZTA materials or MgO. These are printed with NTC pastes on the basis of perovskites in the system YCaCrAlO with various dopings or spinels in the system NiCoMnO with various dopings and fired.

(11) Following the firing, electrodes 4 are provided on the NTC layer 3. The electrodes 4 are applied on the same outer surface of the sensor 1, for example, an underside of the sensor 1. In particular, the electrodes 4 are provided on an underside of the NTC layer 3. The electrodes 4 are arranged spatially separate. The electrodes 4 are separated from one another by a free region 5. The free region 5 is free from electrode material, or may be filled with a protective layer.

(12) The electrodes 4 are applied to the NTC layer 3 by means of screen printing or sputtering technology (PVD process), as described in detail further below.

(13) FIG. 2 shows a sensor element 1 with a free edge 7. As a difference from the sensor element 1 shown in FIG. 1, in the case of the sensor element 1 shown in FIG. 2 a peripheral edge region of the carrier 2 is free from sensor material or free from the NTC layer 3. In FIG. 1, on the other hand, the sensor material (NTC layer 3) completely covers an outer surface of the carrier 2, for example, the underside of the carrier 2.

(14) In this exemplary embodiment, the free edge 7 runs around the periphery. However, the free edge 7 may also only run partly around the periphery.

(15) The geometry of the NTC layer 3 and a degree of coverage of the carrier 2 by the NTC layer 3 are determined by the process of printing the carrier 2 with the NTC layer 3. In particular, during the printing of the carrier 2 with NTC paste, a corresponding edge on the carrier 2 may be left without NTC paste, in order to obtain a free edge 7.

(16) In the case of very closely toleranced resistances, a so-called trimming process may be performed for setting the resistance at nominal temperature, for example, by partial laser ablation. FIGS. 3 and 4 show a corresponding exemplary embodiment. In particular, in the case of the sensor elements 1 shown in FIGS. 3 and 4, a sub-region of the NTC layer 3 between the electrodes 4 has been partially removed by laser ablation. In other words, a region has been removed from the free region 5 of the NTC layer 3 that separates the electrodes 4 from one another. At this point, the NTC layer 3 has a recess 6. This leads to a changed geometry of the NTC layer 3, whereby the resistance of the NTC layer 3 or of the sensor element 1 is set.

(17) In FIG. 4, furthermore, a free edge 7 can again be seen. In particular, in the case of the sensor element 1 shown in FIG. 4, a peripheral edge region of the carrier 2 is free from sensor material.

(18) According to the invention, consequently, a distinction can be made between two sensor types, in a first embodiment the NTC thick film 3 covering the complete carrier surface (FIGS. 1 and 3) and in a second embodiment the NTC thick film 3 only being applied on part of the substrate surface (FIGS. 2 and 4). The thickness of the NTC layer 3, and consequently the resistance, can be set by the number of the printing operations.

(19) With respect to the application of the electrodes 4, a distinction can be madeas mentioned abovebetween thin-film and thick-film technology. The production of the thin-film electrode may be performed by sputtering or vapor deposition. In this case, in a first embodiment the base electrode consists of a nickel layer, which may comprise fractions of vanadium. A nickel-containing layer allows particularly good mechanical and electrical connection, in particular to the ceramic. A fraction of vanadium may be of advantage in particular for technical process-related reasons in the case of a sputtering method. For example, vanadium is present in the nickel-containing layer in a proportion by weight of up to 7%. Nickel is present, for example, in a proportion by weight of at least 93%. The thickness of the nickel-containing layer lies, for example, in the range from 0.3 m to 10 m.

(20) In a second embodiment, the base electrode consists of two layers, the lower layer comprising chromium or titanium and the second layer consisting of nickel, which likewise may comprise fractions of vanadium.

(21) The base electrode may be protected by a covering layer consisting of an oxidation-inhibiting metal such as, for example, silver, gold, copper, aluminum, etc. This covering electrode may just serve for protecting the nickel base electrode from corrosion (oxidation) or else be advantageous or even necessary for contacting.

(22) In the case of a connection by means of Ag sintering with finely dispersed silver pastes, for example, a silver covering electrode is necessary. For a particularly migration-resistant, silver-free and lead-free connection, a gold covering layer may be applied.

(23) Two electrode pads, which are spatially separated from one another by the free region 5, as can be seen from FIGS. 1 to 4, are applied on the NTC thick film 3. Depending on the later contacting method by means of Ag sintering or soldering, the thickness of the base electrode is less than 10 m, advantageously less than 3 m, ideally less than 0.5 m. The thickness of the covering electrode may be up to 1 m, in exceptional cases up to 20 m.

(24) In a further variant, the electrodes 4 are printed onto the NTC thick film 3 by means of thick-film technology, whereby thicker electrode layers can be realized.

(25) The metalized substrates are electrically measured in advance. The geometry of the flip-chip sensor element is defined on the basis of the measurement data obtained in advance. Since the length is in most cases fixed, the width remains as a variable setting parameter.

(26) For particularly closely toleranced resistances at nominal temperature, the resistance of the individual components can be set by an additional trimming processas described above. In this case, ceramic material or electrode material is partially removed, for example, by laser cutting, grinding or sawing, in such a way that the resistance is adapted by changing the geometry.

(27) To be able to improve the long-term stability of the ceramic, a thin, nonconducting protective layer, which consists, for example, of ceramics, glasses, plastics or metal oxides, may be applied over the unmetalized region. This can be achieved by sputtering, vapor deposition, lithography or printing and firing.

(28) For use on mother boards, the thus metalized NTC thick-film sensor 1 may be adhesively bonded, soldered or sintered onto the conductor track. The Ag sintering process may be performed under pressure or without pressure. Further contacting by means of wires or bonding is not required.

(29) Compared with the prior art, as a result of the silver sinterability for both electrodes 4, and without the high mechanical loading caused by bonding, in the case of which there is the risk of microdamage, the corresponding NTC thick-film sensors 1 make possible a construction with increased reliability even at an elevated application temperature.

(30) As a result of the design of the NTC thick-film sensor 1, it can be applied to mother boards in just one process step (pressure sintering or soldering). This obviates the need for further contacting, for example, by means of bonding.

(31) Furthermore, there is an advantage in the lower thermal loading of the NTC thick-film sensor 1 in the production process. On account of the application of the electrode 4 by means of sputtering, this obviates the need for the firing of a metalization paste at temperatures of 700-900 C. In addition, the mechanical stability of the sensor element 1 is increased by the use of ceramic carrier materials on the basis of, for example, Al.sub.2O.sub.3, ZrO.sub.2, ATZ or ZTA materials or MgO.

(32) The production of the flip-chip NTC 1 with a closely toleranced resistance is performed, for example, in the following way:

(33) In a first step, the production of the NTC powder is performed. This step comprises, for example, initial weighing, wet pre-grinding, drying, screening, calcining, wet after-grinding, drying and screening again.

(34) Subsequently, the initial weighing of the NTC powder for the production of the paste is performed. This is followed by initial weighing of organic components for the paste.

(35) In a further step, the paste components are homogenized in advance by agitation. Subsequently, the homogenization of the paste components is performed with a triple roller mill.

(36) In a further step, ceramic carrier material is at least partially printed with the NTC paste by means of screen printing. In this step, the geometry of the later flip-chip NTC is fixed.

(37) Subsequently, the system comprising the ceramic carrier material and NTC layer is decarburized. In a further step, the system comprising the ceramic carrier material and NTC layer is sintered.

(38) Subsequently, the application of Ni/Ag thin-film electrodes to the sintered flip-chip NTCs is performed by means of sputtering technology. Alternatively, thick-film electrodes may also be applied.

(39) In a further step, the electrical measuring of the resistances of the individual flip-chip NTCs at nominal temperature is performed on the not yet separated carrier material. Subsequently, the individual NTC layers are trimmed to the required resistance value by laser ablation.

(40) Lastly, the individual separation of the flip-chip NTCs is performed by sawing the carrier material between the printed NTC regions. The final geometry of the sensor element 1 is produced by the separating process. Subsequently, a visual inspection and random control measurement are performed.

(41) The description of the subjects specified here is not restricted to the individual specific embodiments. Rather, the features of the individual embodiments canas far as technically feasiblebe combined with one another in any desired manner.