Quantum confined stark effect electroabsorption modulator on a SOI platform

Abstract

An electroabsorption modulator. The modulator comprising an SOI waveguide; an active region, the active region comprising a multiple quantum well (MQW) region; and a coupler for coupling the SOI waveguide to the active region. The coupler comprising: a transit waveguide coupling region; a buffer waveguide coupling region; and a taper region; wherein, the transit waveguide coupling region couples light between the SOI waveguide and the buffer waveguide coupling region; and the buffer waveguide coupling region couples light between the transit waveguide region and the active region via the taper region.

Claims

1. An electroabsorption modulator comprising: an SOI waveguide; an active region, the active region comprising a multiple quantum well (MQW) region; and a coupler for coupling the SOI waveguide to the active region, the coupler comprising: a transit waveguide coupling region; a buffer waveguide coupling region; and a taper region, wherein: the transit waveguide coupling region is configured to couple light between the SOI waveguide and the buffer waveguide coupling region, the buffer waveguide coupling region is configured to couple light between the transit waveguide coupling region and the taper region, and the taper region is configured to couple light between the buffer waveguide coupling region and the active region.

2. The electroabsorption modulator of claim 1, wherein the taper region comprises a multi-segment mode expander.

3. The electroabsorption modulator of claim 1, wherein the multiple quantum well region is a Ge/SiGe multiple quantum well region.

4. The electroabsorption modulator of claim 1, wherein: the transit waveguide coupling region comprises a first portion of a transit waveguide; and the buffer waveguide coupling region comprises a buffer waveguide located on top of a second portion of the transit waveguide.

5. The electroabsorption modulator of claim 4, wherein: the transit waveguide has a refractive index bigger than that of the SOI waveguide but smaller than that of the buffer waveguide.

6. The electroabsorption modulator of claim 4, wherein: the SOI waveguide is a 3 um waveguide; the transit waveguide has a thickness of no more than 400 nm; and the buffer waveguide has a thickness of no more than 400 nm.

7. The electroabsorption modulator of claim 6, wherein the transit waveguide has a thickness of no more than 600 nm.

8. The electroabsorption modulator of claim 6, wherein the transit waveguide has a thickness of no more than 800 nm.

9. The electroabsorption modulator of claim 4, wherein each of the buffer waveguide and transit waveguide are SiGe waveguides.

10. The electroabsorption modulator of claim 4, wherein the active region comprises: a P-doped region between a buffer layer and a lower surface of a spacer layer underneath the multiple quantum well region; and an N-doped region located at an upper surface of a spacer layer on top of the multiple quantum well region.

11. The electroabsorption modulator of claim 10, further comprising multiple N-type doped layers with different germanium compositions and doping concentrations.

12. The electroabsorption modulator of claim 1, wherein a waveguide slab of a P-doped region in the active region is P-doped with ion implantation followed by an RTA process.

13. The electroabsorption modulator of claim 1, further comprising electrodes arranged in a ground-signal (GS) configuration, wherein a ground electrode is located at an opposite side of the active region from a signal electrode.

14. The electroabsorption modulator of claim 1, further comprising electrodes arranged in a ground-signal-ground (GSG) configuration, where a first ground electrode and a second ground electrode are located at the same side of the active region as a signal electrode.

15. The electroabsorption modulator of claim 1, wherein the multiple quantum well region includes at least 5 quantum wells.

16. The electroabsorption modulator of claim 1, wherein a spacing between respective pairs of the quantum wells is in the range of 10 nm to 20 nm.

17. The electroabsorption modulator of claim 1, wherein each quantum well in the multiple quantum well region has a thickness in the range of 5 nm to 15 nm.

18. The electroabsorption modulator of claim 1, further comprising a metal electrode in contact with a surface of the active region opposite to the coupler, wherein the MQW region includes at least one tapered portion of MQW material which extends into the taper region; and wherein the metal electrode extends as far as the tapered portion of MQW material.

19. The electroabsorption modulator of claim 18, wherein the electrode has a length in a direction towards the taper region which is greater than 2.5 m.

20. The electroabsorption modulator of claim 1, wherein the active region includes an N-doped region located above an upper surface of a spacer layer on top of the multiple quantum well region, and wherein the N-doped region comprises Si.sub.0.9Ge.sub.0.1.

21. The electroabsorption modulator of claim 1, wherein: the transit waveguide coupling region comprises a first portion of a transit buffer layer on the SOI waveguide; and the buffer waveguide coupling region comprises a second portion of the transit buffer layer on the SOI waveguide and a first portion of a buffer layer on the second portion of the transit buffer layer, the second portion of the transit buffer layer being between the SOI waveguide and the first portion of the buffer layer.

22. The electroabsorption modulator of claim 21, wherein: an index of refraction of the transit buffer layer is greater than an index of refraction of the SOI waveguide; and an index of refraction of the buffer layer is greater than the index of refraction of the transit buffer layer.

23. The electroabsorption modulator of claim 1, wherein: the taper region comprises a first mode expander region and a second mode expander region; the first mode expander region is configured to couple light between the buffer waveguide coupling region and the second mode expander region; a first end of the first mode expander region abuts against the buffer waveguide coupling region; the first mode expander region comprises a first portion of a buffer layer having a first width at the first end of first mode expander region, the width of the first portion of the buffer layer expanding, according to a first taper angle, to a second width at a second end, opposite the first end, of the first mode expander region; a first end of the second mode expander region abuts against the second end of the first mode expander region; and the second mode expander region comprises a second portion of the buffer layer having the second width at the first end of the second mode expander region, the width of the second portion of the buffer layer expanding, according to a second taper angle, greater than the first taper angle, to a third width at a second end, opposite the first end, of the second mode expander region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) These and other features and advantages of the present invention will be appreciated and understood with reference to the specification, claims, and appended drawings wherein:

(2) FIG. 1 is a SiGe epitaxial layer structure including a multiple QW structure, according to an embodiment of the present invention;

(3) FIG. 2A is a 3D view of a device design #1 based on the SiGe epitaxial layer structure shown in FIG. 1 with GS electrode structure;

(4) FIG. 2B is a 3D view of a device design #1 based on the SiGe epitaxial layer structure shown in FIG. 1 with GSG electrode structure;

(5) FIG. 3A is the top view of a device design #1 based on the SiGe epitaxial layer structure shown in FIG. 1 with GS electrode structure;

(6) FIG. 3B is top view of a device design #1 based on the SiGe epitaxial layer structure shown in FIG. 1 with GSG electrode structure;

(7) FIG. 4 shows the device design #1 top view with detailed device structure for each section;

(8) FIG. 5 is the section view along the middle line KK of the device design #1;

(9) FIG. 6A is a 3D view of a device design #2 based on the SiGe epitaxial layer structure shown in FIG. 1 with GS electrode structure;

(10) FIG. 6B is a 3D view of a device design #2 based on the SiGe epitaxial layer structure shown in FIG. 1 with GSG electrode structure;

(11) FIG. 7A is the top view of a device design #2 based on the SiGe epitaxial layer structure shown in FIG. 1 with GS electrode structure;

(12) FIG. 7B is the top view of a device design #2 based on the SiGe epitaxial layer structure shown in FIG. 1 with GSG electrode structure;

(13) FIG. 8 shows the device design #2 top view with detailed device structure for each section;

(14) FIG. 9 is the section view along the middle line KK of the device design #2;

(15) FIG. 10 is another SiGe epitaxial layer structure including a multiple QW structure, according to an embodiment of the present invention;

(16) FIG. 11 shows the device design #3 top view with detailed device structure for each section based on the SiGe epitaxial layer structure shown in FIG. 10 with GS electrode structure;

(17) FIG. 12 is the section view along the middle line KK of the device design #3;

(18) FIG. 13 is another SiGe epitaxial layer structure including a multiple QW structure, according to an embodiment of the present invention;

(19) FIG. 14 shows the device design #4 top view with detailed device structure for each section based on the SiGe epitaxial layer structure shown in FIG. 13 with GS electrode structure;

(20) FIG. 15 is the section view along the middle line KK of the device design #4;

(21) FIG. 16 is the input/output 3 m SOI waveguide for use with all devices disclosed herein; and

(22) FIG. 17 is typical optical transition from 3 m SOI waveguide to SiGe MQW waveguide simulation result at 1.3 m wavelength;

(23) FIG. 18 is the top view of a device design #5 based on any one of the SiGe epitaxial layer structures shown in FIG. 1, FIG. 10 and FIG. 13, the device of FIG. 18 having a GS electrode structure;

(24) FIG. 19 is the section view along the middle line KK of the device design #5

(25) FIG. 20 shows a device design #1B in a top view with detailed device structure for each section; and

(26) FIG. 21 is the section view along the middle line KK of the device design #1B.

DETAILED DESCRIPTION

(27) The detailed description set forth below in connection with the appended drawings is intended as a description of exemplary embodiments of an electroabsorption modulator provided in accordance with the present invention and is not intended to represent the only forms in which the present invention may be constructed or utilized. The description sets forth the features of the present invention in connection with the illustrated embodiments. It is to be understood, however, that the same or equivalent functions and structures may be accomplished by different embodiments that are also intended to be encompassed within the spirit and scope of the invention. As denoted elsewhere herein, like element numbers are intended to indicate like elements or features.

(28) A first embodiment (EPI design #1) is shown in FIGS. 1 to 9.

(29) FIG. 1 shows an example of a SiGe EPI structure in accordance with the present invention in which a thin layer of transit buffer SiGe is inserted between the 3 m SOI waveguide and the SiGe buffer layer that is for the SiGe MQW.

(30) This transit buffer SiGe layer: a) has a refractive index larger than that of Si and smaller than that of SiGe buffer layer, therefore, light can be evanescently coupled from the SOI waveguide to the transit buffer SiGe waveguide; and b) serves as an extra-buffer layer for the SiGe buffer layer of the MQW waveguide to ease the stress due to the crystal lattice mismatch between Si and SiGe MQW, which is critical for the SiGe MQW EPI quality.

(31) The transit buffer SiGe layer shown has a germanium content of 20% (Si.sub.0.8Ge.sub.0.2). Optionally, this transit buffer SiGe layer may have a germanium content ranging from 5% (Si.sub.0.95Ge.sub.0.05) to 50% (Si.sub.0.5Ge.sub.0.5) and a thickness ranging from 400 nm to 1000 nm.

(32) Based on the proposed SiGe EPI structure, the waveguide evanescent coupling structure brings light from the SOI waveguide (which may be a 3 m SOI waveguide) to a SiGe MQW waveguide in the following steps: a) From a SOI waveguide (which may be a 3 m SOI waveguide) to a transit buffer SiGe waveguide (which may be a 400 nm transit buffer SiGe waveguide) b) From the transit buffer SiGe waveguide (which may be a 400 nm transit buffer SiGe waveguide) to a buffer SiGe waveguide (which may be a 400 nm a buffer SiGe waveguide). The buffer SiGe layer shown has a germanium content of 79% (Si.sub.0.21Ge.sub.0.79). Optionally, this buffer SiGe layer may have a germanium content ranging from 70% (Si.sub.0.3Ge.sub.0.7) to 95% (Si.sub.0.05Ge.sub.0.95), and a thickness ranging from 400 nm to 1000 nm. c) From the buffer SiGe waveguide (which may be a 400 nm a buffer SiGe waveguide) to a SiGe MQW waveguide via a taper structure. The taper structure expends the optical mode of the buffer waveguide to the optical mode of the SiGe MQW waveguide. Wherein the taper structure and the SiGe MQW waveguide may consist of: the transit buffer SiGe, 400 nm buffer SiGe, 200 nm P-layer, 50 nm spacer, 140 nm quantum well layer (5 QW) which has 15 nm barriers or spacers between respective quantum wells which are 10 nm thick, 50 nm spacer, 300 nm N-layer, 200 nm N-doped cover layer and 100 nm heavily N-doped cover layer as shown in FIG. 1. The P-layer, spacer layers and N-layer may have the same germanium content, (79%, Si.sub.0.21Ge.sub.0.79), as that of buffer layer. Optionally, the P-layer, spacer layers and N-layer may have a germanium content ranging from 70% (Si.sub.0.3Ge.sub.0.7) to 90% (Si.sub.0.1Ge.sub.0.9). The N-doped cover layer and heavily N-doped cover layer may have a germanium content less than that of buffer layer, P-layer, spacer layers and N-layer. The germanium content of the N-doped cover layer and heavily doped N-doped cover layer may be 20% (Si.sub.0.8Ge.sub.0.2). Optionally, the germanium content of the N-doped cover layer and heavily doped N doped cover layer may range from 5% (Si.sub.0.95Ge.sub.0.05) to 50% (Si.sub.0.5Ge.sub.0.5). The germanium content of the barrier layer in the quantum well is 65% (Si.sub.0.35Ge.sub.0.65). Optionally, the germanium content of the barrier layer in the quantum well may range from 60% (Si.sub.0.4Ge.sub.0.6) to 85% (Si.sub.0.15Ge.sub.0.85) with a general rule that the average germanium content in the Ge/Si quantum well is the same or substantially the same as the germanium content of the buffer layer. The number of quantum wells is five in this EPI structure. Optionally, the number of the quantum wells may range from 5 to 15.

(33) The QCSE EAM consists of two coupling regions, which have two waveguide evanescent coupling structures and one taper structure, and one active region between the two coupling regions

(34) The active region preferably has the same waveguide structure as the SiGe MQW waveguide.

(35) Light from the Si waveguide (which may be a 3 um Si waveguide) travels through the first coupling region to reach the active region.

(36) In the active region, light is absorbed and modulated according to the external bias voltage.

(37) After modulation, the light goes through the second coupling region back to a/the Si waveguide (which may be a 3 m Si waveguide).

(38) Three examples of devices which incorporate the electroabsorption modulator of the present invention are now described.

(39) The first example (device design #1 based on EPI design #1) can be seen in the 3D views shown in FIG. 2A and FIG. 2B and also in the top views as shown in FIG. 3A (GS electrodes) and FIG. 3B (GSG electrodes). In this device design #1, the taper structure comprises 5 segments to expand the optical mode of buffer waveguide to the optical mode of SiGe MQW waveguide: three mode expander regions (C, D, and E) as well as the transit waveguide coupling region A and the buffer waveguide coupling region B. An example of measurements for the entire device is shown in FIG. 4 and a section view of the device is shown in FIG. 5. The simulation results for device design #1 at 1.3 m wavelength for TE mode are below: insertion loss 4.87 dB, extinction ratio 4.16 dB and link penalty 9.97 dB.

(40) The second example (device design #2 based on EPI design #1) can be seen in the 3D views shown in FIG. 6A and FIG. 6B and also in the top views as shown in FIG. 7A (GS electrodes) and FIG. 7B (GSG electrodes). In this device design #2, the taper structure comprises 6 segments to expand the optical mode of buffer waveguide to the optical mode of SiGe MQW waveguide: four mode expander regions (C, D, E, and F) as well as the transit waveguide coupling region A and the buffer waveguide coupling region B. An example of measurements for the entire device of the second example (device design #2 based on EPI design #1) is shown in FIG. 8 and a section view of the device is shown in FIG. 9. The simulation results for device design #2 at 1.3 m wavelength for TE mode are below: insertion loss 4.43 dB, extinction ratio 4.16 dB and link penalty 9.53 dB.

(41) An example (EPI design #2) and an associated device design #3 is shown in FIGS. 10-12. this embodiment differs from that of FIG. 1(EPI design #1) in that: a) Transit buffer layer: 600 nm, Si.sub.0.9Ge.sub.0.1 b) cover N-doped layer: Si.sub.0.9Ge.sub.0.1

(42) As with the devices described above, devices including the EPI design of the second embodiment may be fabricated with: a) GS electrodes; or b) GSG electrodes

(43) In a third example, device design #3, the taper structure comprises 6 segments to expand the optical mode of buffer waveguide to the optical mode of SiGe MQW waveguide: four mode expander regions (C, D, E, and F) as well as the transit waveguide coupling region A and the buffer waveguide coupling region B. The simulation results for device design #3 at 1.3 m wavelength for TE mode are below: insertion loss 4.87 dB, extinction ratio 4.16 dB and link penalty 9.97 dB.

(44) A third embodiment (EPI design #3) of the present invention and an associated device design #4 is shown in FIGS. 13-15. This embodiment differs from that of FIG. 1 (EPI design #1) in that: a) Transit buffer layer: 800 nm, Si.sub.0.9Ge.sub.0.1 b) cover N-doped layer: Si.sub.0.9Ge.sub.0.1

(45) As with the devices described above, devices including the EPI design of the third embodiment may be fabricated with: a) GS electrodes; or b) GSG electrodes.

(46) In this device design #4, the taper structure comprises 6 segments to expand the optical mode of buffer waveguide to the optical mode of SiGe MQW waveguide: four mode expander regions (C, D, E, and F) as well as the transit waveguide coupling region A and the buffer waveguide coupling region B. The simulation results for device design #4 at 1.3 m wavelength for TE mode are below: insertion loss 4.66 dB, extinction ratio 4.16 dB and link penalty 9.76 dB.

(47) An example of in input (and/or output waveguide) for coupling to any one of the EPI regions described herein is shown in FIG. 16. In some embodiments, this may take the form of a 3 m SOI waveguide.

(48) Typical optical transition from 3 m SOI waveguide to SiGe MQW waveguide simulation result at 1.3 m wavelength is shown in FIG. 17 for a half device structure. The device is symmetric, so the half structure simulation enabled relevant information to be achieved whilst conserving computer space.

(49) FIG. 18 shows another example of a device design; device design #5. This device design is could contain any one of the EPI structures of the embodiments (EPI design #1, EPI design #2 and EPI design #3) shown in FIG. 1, FIG. 10 and FIG. 13. The taper structure of device design #5 comprises 4 segments which act to expand the optical mode of buffer waveguide to the optical mode of SiGe MQW waveguide: two mode expander regions (C and D) as well as the transit waveguide coupling region A and the buffer waveguide coupling region B. An advantage of using such a taper structure with 4 segments is the ease of device fabrication process with fewer processing steps. FIG. 19 shows the section view of design #5 along the middle line KK.

(50) A fourth embodiment (EPI design #1B) of the present invention and associated device design is shown in FIG. 20-21.

(51) An example of measurements for the entire device is shown in FIG. 20, and a section view of the device is shown in FIG. 21. This design differs from that shown in, for example, FIG. 14, in at least that the electrodes of FIG. 20 which are in contact with a surface of the active region opposite the coupler extend beyond the main body of the active region in a direction towards their respective taper regions. In this embodiment, the MQW region comprises a main section in the main body of the active region, but also includes at least one tapered portion of MQW material which extends from the main body of the active material forming active tapered portions overlaying the tapered layers underneath. As can be seen in FIG. 20, the tapered portions of the MQW material therefore extend outwards from the main body of the active region (marked E) into at least the active mode expander region (marked D).

(52) Although exemplary embodiments of an electroabsorption modulator have been specifically described and illustrated herein, many modifications and variations will be apparent to those skilled in the art. Accordingly, it is to be understood that an electroabsorption modulator constructed according to principles of this invention may be embodied other than as specifically described herein. The invention is also defined in the following claims, and equivalents thereof.