PHASE SHIFTER

Abstract

A phase shifter includes a signal input, a signal output, an ESD protection circuit, first and second signal paths between the signal input and the signal output. The ESD protection circuit includes first and second two port devices, each two port device being switchable between a high impedance state and a low impedance state. The first signal path includes the first two port device of the ESD protection circuit and a first delay line configured to provide a first phase shift to a signal transmitted from the signal input to the signal output via the first signal path. The second signal path includes the second two port device of the ESD protection circuit and a second delay line configured to provide a second phase shift, different from the first phase shift, to the signal transmitted from the signal input to the signal output via the second signal path.

Claims

1. A phase shifter, comprising: a signal input; a signal output; an electrostatic discharge protection circuit comprising a first two port device and a second two port device, each two port device being switchable between a high impedance state and a low impedance state; a first signal path between the signal input and the signal output, wherein the first signal path comprises the first two port device of the electrostatic discharge protection circuit and a first delay line configured to provide a first phase shift to a signal transmitted from the signal input to the signal output via the first signal path; and a second signal path between the signal input and the signal output, wherein the second signal path comprises the second two port device of the electrostatic discharge protection circuit and a second delay line configured to provide a second phase shift, different from the first phase shift, to the signal transmitted from the signal input to the signal output via the second signal path; wherein the electrostatic discharge protection circuit is a circuit that is conventionally used for protecting electrostatic discharge sensitive electronic circuits from an electrostatic discharge; and wherein the first two port device and the second two port device are capable of non-destructively discharging electrostatic discharge voltages or electrostatic discharge currents in an electrostatic discharge event; wherein each of the two port devices of the electrostatic discharge protection circuit is implemented by means of two reverse connected diodes; or by means of a uni-directional high-speed diode adapted to be operated in a reverse breakdown operation mode in the low impedance state.

2. The phase shifter according to claim 1, wherein the phase shifter is configured to apply an adjustable phase shift to the signal transmitted from the signal input to the signal output by switching one out of the first two port device and second two port device from the low impedance state to the high impedance state.

3. The phase shifter according to claim 1, wherein the first two port device and the second two port device are adapted to be operated in a reverse breakdown operation mode in the low impedance state.

4. The phase shifter according to claim 1, wherein the first two port device and the second two port device are optimized to discharge voltage peaks or current peaks in a fast manner such that the electrostatic discharge protection circuit is capable of protecting electronic devices connected downstream the electrostatic discharge protection circuit from the voltage peaks or current peaks.

5. The phase shifter according to claim 1, wherein the first two port device and the second two port device are configured to provide a low impedance at high frequencies such that the electrostatic discharge protection circuit is capable of conducting fast transient voltages or currents.

6. The phase shifter according to claim 1, wherein the first two port device and the second two port device comprise parasitic capacitances of less than 0.5 pF.

7. The phase shifter according to claim 1, wherein the first two port device and the second two port device are individually switchable between the low impedance state and the high impedance state.

8. The phase shifter according to claim 1, wherein the phase shifter is configured to apply a DC voltage which is equal to or higher than a breakdown voltage of the first two port device and the second two port device across the first two port device or the second two port device in order to switch the respective two port device from the low impedance state to the high impedance state.

9. The phase shifter according to claim 8, wherein the phase shifter is configured to apply the DC voltage via a low pass filter to the respective two port device.

10. The phase shifter according to claim 1, wherein the phase shifter comprises a band pass or high pass filter serially connected between the signal input and first and second signal paths.

11. The phase shifter according to claim 1, wherein the first two port device and the second two port device are connected in a serial, parallel or resonant configuration.

12. The phase shifter according to claim 1, wherein the first phase shift and the second phase shift differ in such a manner that a signal transmitted from the signal input to the signal output via one of the first two port device and the second two port device and a signal leaked trough the other one of the first two port device and the second two port device from the signal input to the signal output superimpose such that the signal transmitted is attenuated by the signal leaked without affecting the phase of the signal transmitted.

13. The phase shifter according to claim 12, wherein the first phase shift and the second phase shift differ by 180°.

14. The phase shifter according to claim 12, wherein the electrostatic discharge protection circuit comprises a third two port device, the two port device being switchable between a high impedance state and a low impedance state; wherein the phase shifter comprises a third signal path between the signal input and the signal output, wherein the third signal path comprises the third two port device of the electrostatic discharge protection circuit and a third delay line configured to provide a third phase shift, different from the first phase shift and the second phase shift, to the signal transmitted from the signal input to the signal output via the third signal path; wherein the first phase shift, the second phase shift and the third phase shift differ in such a manner that a signal transmitted from the signal input to the signal output via one of the first two port device, the second two port device and the third two port device and signals leaked trough the others of the first two port device, the second two port device and the third two port device from the signal input to the signal output superimpose such that the signals leaked are fully or partially canceled.

15. The phase shifter according to claim 14, wherein the first phase shift, the second phase shift and the third phase shift differ from each other by 120°.

16. The phase shifter according to claim 1, wherein the electrostatic discharge protection circuit comprises n two port devices, each of the n two port devices being switchable between a high impedance state and a low impedance state, wherein the phase shifter comprises n delay lines; wherein the phase shifter comprises n signal paths between the signal input and the signal output, each signal path comprising one of the n two port devices of the electrostatic discharge protection circuit and one of the n delay lines, each delay line being configured to provide a phase shift to the signal transmitted from the signal input to the signal output, wherein the phase shifts of n the delay lines differ by 360°/n, wherein n is a natural number equal to or greater than two.

17. A phase shifter, comprising: a signal input; a signal output; an electrostatic discharge protection circuit comprising a two port device, the two port device being switchable between a high impedance state and a low impedance state; a first signal path between the signal input and the signal output, wherein the first signal path comprises the two port device of the electrostatic discharge protection circuit; and a second signal path between the signal input and the signal output, wherein the second signal path comprises a delay line configured to provide a phase shift to the signal transmitted from the signal input to the signal output via the second signal path; wherein the phase shifter is configured to apply an adjustable phase shift to the signal transmitted from the signal input to the signal output by switching the two port device from the low impedance state to the high impedance state; wherein the electrostatic discharge protection circuit is a circuit that is conventionally used for protecting electrostatic discharge sensitive electronic circuits from an electrostatic discharge; and wherein the first two port device and the second two port device are capable of non-destructively discharging electrostatic discharge voltages or electrostatic discharge currents in an electrostatic discharge event; wherein each of the two port devices of the electrostatic discharge protection circuit is implemented by means of two reverse connected diodes; or by means of a uni-directional high-speed diode adapted to be operated in a reverse breakdown operation mode in the low impedance state.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Embodiments of the present invention will be detailed subsequently referring to the appended drawings, in which:

[0026] FIG. 1 shows a schematic block diagram of a phase shifter according to an embodiment;

[0027] FIG. 2 shows a schematic block diagram of a phase shifter according to an embodiment;

[0028] FIG. 3 shows a schematic block diagram of a phase shifter according to an alternative embodiment; and

[0029] FIGS. 4a to 4c show schematic block diagrams of common phase shifters using switched transmission lines.

DETAILED DESCRIPTION OF THE INVENTION

[0030] Equal or equivalent elements or elements with equal or equivalent functionality are denoted in the following description by equal or equivalent reference numerals.

[0031] In the following description, a plurality of details are set forth to provide a more thorough explanation of embodiments of the present invention. However, it will be apparent to one skilled in the art that embodiments of the present invention may be practiced without the specific details. In other instances, well-known structures and devices are shown in block diagram form rather than in detail in order to avoid obscuring embodiments of the present invention. In addition, features of the different embodiments described hereinafter may be combined with each other unless specifically noted otherwise.

[0032] FIG. 1 shows a schematic block diagram of a phase shifter 100 according to an embodiment. The phase shifter 100 comprises a signal input (e.g., a RF input (RF=radio frequency)) 102, a signal output (e.g., a RF output) 104, an ESD protection circuit 106, a first signal path 108_1 between the signal input 102 and the signal output 104 and a second signal path 108_2 between the signal input 102 and the signal output 104.

[0033] The ESD protection circuit 106 comprises a first two port device 110_1 and a second two port device 110_2, each two port device 110_1 and 110_2 being switchable between a high impedance state (e.g., non-conducting state) and a low impedance state (e.g., conducting state).

[0034] The first signal path 108_1 comprises the first two port device 110_1 of the ESD protection circuit 106 and a first delay line 112_1 configured to provide a first phase shift to a signal transmitted from the signal input 102 to the signal output 104 via the first signal path 108_1. The second signal path 108_2 comprises the second two port device 110_2 of the ESD protection circuit 106 and a second delay line 112_2 configured to provide a second phase shift, different from the first phase shift, to the signal transmitted from the signal input 102 to the signal output 104 via the second signal path 108_2.

[0035] Note that, the ESD protection circuit 106 may comprise up to n two port devices 110_1 to 110_n, each of the n two port devices being switchable between a high impedance state and a low impedance state, wherein the phase shifter 100 may comprise n signal paths 108_1 to 108_n between the signal input 102 and the signal output 104, each signal path comprising one of the n two port devices of the ESD protection circuit 106 and one of the n delay lines 112_1 to 112_n, each delay line being configured to provide a phase shift to the signal transmitted from the signal input 102 to the signal output 104, wherein n is a natural number equal to or greater than two.

[0036] The phase shifter 100 can be configured to apply an adjustable phase shift to the signal transmitted from the signal input 102 to the signal output 104 by switching one out of the first two port device 110_1 and second two port device 110_2 from the low impedance state to the high impedance state. Thereby, the first two port device 110_1 and the second two port device 110_2 can be individually switchable between the low impedance state and the high impedance state.

[0037] For example, the phase shifter 100 can be configured to switch the first two port device 110_1 to the low impedance state and the second two port device 110_2 to the high impedance state, such that the signal is transmitted via the first signal path 108_1 from the signal input 102 to the signal output 104 thereby applying the first phase shift by means of the first delay line 112_1 to the signal transmitted.

[0038] Naturally, the phase shifter 100 can be configured to switch the first two port device 110_1 to the high impedance state and the second two port device 110_2 to the low impedance state, such that the signal is transmitted via the second signal path 108_2 from the signal input 102 to the signal output 104 thereby applying the second phase shift by means of the second delay line 112_2 to the signal transmitted.

[0039] As already mentioned, each of the first two port device 110_1 and second two port device 110_2 is switchable between a high impedance state and a low impedance state. Thereby, the low impedance state can be a conducting state in which the signal is transmitted via the respective two port device without being substantially attenuated by the two port device (e.g., a state in which the signal input 102 and the respective delay line are connected by means of the respective two port device). The high impedance state can be a non-conducting state in which the signal is substantially not transmitted via the respective two-port device (e.g., a state in which the signal input 102 and the respective delay line are disconnected by means of the respective two port device). However, even if a two port device is switched to the high impedance state, a small portion of the signal to be transmitted from the signal input 102 to the signal output 104 may leak through the respective two port device, e.g., due to a parasitic capacitance of the respective two port device.

[0040] Therefore, in some embodiments, the first phase shift provided by the first delay line 112_1 and the second phase shift provided by the second delay line 112_2 may differ in such a manner that a signal transmitted from the signal input 102 to the signal output 104 via one of the first two port device 110_1 and the second two port device 110_2 and a signal leaked trough the other one of the first two port device 110_1 and the second two port device 110_2 from the signal input 102 to the signal output 104 superimpose such that the signal transmitted is attenuated by the signal leaked without affecting the phase of the signal transmitted.

[0041] For example, the phase shifter 100 can be configured to switch the first two port device 110_1 to the low impedance state and the second two port device 110_2 to the high impedance state. In that case, the signal is transmitted from the signal input 102 to the signal output 104 via the first two port device 110_1, wherein a small portion of the signal leaks through the second two port device 110_2 from the signal input 102 to the signal output 104. The first phase shift provided by the first delay line 112_1 and the second phase shift provided by the second delay line 112_2 may differ in such a manner that the signal transmitted and the signal leaked superimpose such that the signal transmitted is attenuated by the signal leaked without affecting the phase of the signal transmitted.

[0042] Naturally, the phase shifter 100 can also be configured to switch the first two port device 110_1 to the high impedance state and the second two port device 110_2 to the low impedance state. In that case, the signal is transmitted from the signal input 102 to the signal output 104 via the second two port device 110_2, wherein a small portion of the signal leaks through the first two port device 110_1 from the signal input 102 to the signal output 104. The first phase shift provided by the first delay line 112_1 and the second phase shift provided by the second delay line 112_2 may differ in such a manner that the signal transmitted and the signal leaked superimpose such that the signal transmitted is attenuated by the signal leaked without affecting the phase of the signal transmitted.

[0043] As indicated in FIG. 1, optionally, the ESD protection circuit 106 can comprise a third two port device 110_3, the two port device being switchable between a high impedance state and a low impedance state, wherein the phase shifter 100 comprises a third signal path 108_3 between the signal input 102 and the signal output 104, wherein the third signal path comprises 108_3 the third two port device 110_3 of the ESD protection circuit 106 and a third delay line 112_3 configured to provide a third phase shift, different from the first phase shift and the second phase shift, to the signal transmitted from the signal input 102 to the signal output 104 via the third signal path 108_3. Thereby, the first phase shift, the second phase shift and the third phase shift may differ in such a manner that a signal transmitted from the signal input 102 to the signal output 104 via one of the first two port device 110_1, the second two port device 110_2 and the third two port device 110_3 and signals leaked trough the other (two) of the first two port device 110_1, the second two port device 110_2 and the third two port device 110_3 from the signal input 102 to the signal output 104 superimpose such that the signals leaked are fully or partially canceled.

[0044] In embodiments, the phase shifts of the delay lines of the phase shifter 100 may differ by 360°/n, wherein n is a natural number equal to or greater than two. For example, if the phase shifter comprises two (n=2) signal paths 108_1 and 108_2 between the signal input 102 and the signal output 104 then the phase shifts of the two delay lines 112_1 and 112_2 of the two signal paths 108_1 and 108_2 may differ by 180°. For example, if the phase shifter comprises three (n=3) signal paths 108_1 to 108_3 between the signal input 102 and the signal output 104 then the phase shifts of the three delay lines 112_1 to 112_3 of the three signal paths 108_1 to 108_3 may differ by 120°. Naturally, also any other combination of different phase shifts may be used for implementing the phase shifter 100 disclosed herein.

[0045] FIG. 2 shows a schematic block diagram of a phase shifter 100 according to an embodiment. Compared to FIG. 1, in FIG. 2 a fourth signal path 108_4 between the signal input (RF input) 102 and the signal output (RF output) 104 are shown. The fourth signal path 108_4 comprises a fourth two port device 110_4 of the ESD protection circuit 106 and a fourth delay line 112_4.

[0046] As indicated in FIG. 2, each of the two port devices 110_1 to 110_4 of the ESD protection circuit 106 can be implemented by means of two reverse connected diodes. Naturally, also other implementations of the two port devices 110_1 to 110_4 of the ESD protection circuit 106 are possible. For example, each of the two port devices 110_1 to 110_4 of the ESD protection circuit 106 can be implemented by means of a uni-directional high-speed diode, a varactor type device or a thyristor type device.

[0047] Although the two port devices 110_1 to 110_4 are connected in a serial configuration in the embodiment of the phase shifter 100 shown in FIG. 2, it is noted that also other connection types are possible. For example, the two port devices 110_1 to 110_4 can be connected in a parallel or resonant configuration.

[0048] Further, the phase shifter 100 can be configured to apply a DC voltage which is equal to or higher than a breakdown voltage of the respective two port device 110_1 to 110_4 across the respective two port device 110_1 to 110_4 in order to switch the respective two port device from the low impedance state to the high impedance state. The DC voltage can be applied via a low pass filter to the respective two port device 110_1 to 110_4.

[0049] Furthermore, the phase shifter 100 can comprise a bias tee, a band pass filter or high pass filter 114 serially connected between the signal input 102 and the signal paths 108_1 to 108_4. For example, as indicated in FIG. 2, the phase shifter 100 can comprise a bias tee 114 (e.g., implemented by means of a serial capacitor). The bias tee 114 may decouple the RF signal from the (DC) branch for biasing.

[0050] As shown in FIG. 2, embodiments use ESD protection circuits 106 instead of PIN diodes, e.g. as binary “switch” in an otherwise known or modified phase shifter design. Similar to PIN diodes, many ESD protection circuits 106 are 2-port devices and can be toggled between an “isolating” (high impedance) and a “conducting” (low impedance) state by applying no or a sufficiently high direct-current (DC) voltage across the 2 ports. Using a combination of low-pass coupling for the DC-voltage and high-pass or band-pass coupling for the RF signal to be phase shifted, the DC control voltage can be applied and toggled to switch a transmission path for the RF signal, but without otherwise affecting the AC signal.

[0051] Various variants of ESD protection devices are known and can be used for the implementation of phase shifters 100. This includes devices with 2 reverse connected diodes in series (as symbolically shown in FIG. 2), uni-directional high-speed diodes, varactor type and thyristor type devices.

[0052] FIG. 2 shows one example for a phase shifter that uses a 4 channel ESD protection circuit 106. Each switch 110_1 to 110_4 is serially connected to one delay line (configured to providing different, e.g. 0°, 90°, 180° and 270° phase shifts). Typically exactly one of the 4 switches is “conducting” at a time, and all other switches are in “isolating” state. The “conducting” state of the switch is triggered by applying a sufficiently high voltage at one of the 4 “Phase Selection” signals, while leaving all other “Phase Selection” signals at low voltage. Triggering the “conducting” state is equal to triggering the ESD function of the protection circuit 106, resulting in a low impedance path across the circuit.

[0053] In a real-word build of the schematic shown in FIG. 2, the 3 switches in “isolating” state would still represent a parasitic capacitance. Given a sufficiently high frequency RF signal, at least some energy would leak through the “isolating” ESD protection circuit, propagate through the connected Delay Line and add to the RF_OUTPUT signal. However, due to the symmetrical construction in FIG. 2 and the dimensioning of the phase shifts in the delay lines 112_1 to 112_4, pairs (e.g. 0° and 180°, 90° and 270°) of signals have 180° phase offset and therefore cancel. Just the wanted signal (path with the conducting ESD protection circuit) and the “leaking” attenuated 180° offset signal remain an effective contributor to the RF_OUTPUT signal; the resulting signal is attenuated (due to partial destructive combining), but does not suffer from an additional phase error.

[0054] Embodiments of the phase shifter 100 provide the following advantages: [0055] 1) Compared to PIN diodes, ESD protection circuits are “mass market” products, actively developed and optimized for different application ranges. [0056] a) For the protection of high speed signal lines, ESD protection devices are e.g. optimized for low parasitic capacitance, high signal integrity and low attenuation at considerable high frequencies. Such optimizations include the characteristics of the core circuit as well at the package parasitic capacity, package size and mounting. [0057] b) Low parasitic capacitance (typ. down to 0.1 pF) allows operation at high frequency, including Ku- and Ka-Band used for Satellite communications. [0058] c) Device footprint (<1 mm2) and package is optimized for surface mounting; this allows assembly of the devices on the rear side of the printed circuit board used for the antenna array. Many devices fit within the “unit square” of one antenna element. [0059] 2) ESD protection devices are packed as singles units as well as in multi-channel configurations. [0060] a) Multi-channel configurations with common port simplify layout and improve signal integrity; the common port is especially advantageous as common port in a splitter or combiner configuration, e.g. to split and then route the signal through delay lines of different length. [0061] b) Devices in a multi-channel configuration share the same manufacturing legacy and are thus better matched, regarding their functional and parasitic parameters. This is advantageous in balancing the different paths in the multi-channel configuration and to exploit pair-wise cancelation of 180° offset “leaking” signals. [0062] c) Multi-channel configurations support the streamlined build-up of modular design blocks that are replicated identically and symmetrically across the antenna array. [0063] d) The complexity for controlling (“switching”) the ESD protection circuit is limited; DC coupling of the control signal and high impedance isolation of the RF signal can be achieved by use of series inductors, e.g. implemented as wire structures on the PCB material. [0064] e) The complexity of a single phase shifter is low; devices with multiple channels are available in a single package, reducing manufacturing complexity. [0065] 3) ESD protection devices are passive and consume only small energy quantities for switching and in the “conducting” state, with typically only one of the n devices in conducting state and the other (n−1) devices “isolating”. The “conducting” state is very low impedance and therefore low loss. This is a major benefit over the use of active components that, depending on operating frequency, may involve high bias currents, resulting in high power consumption and heat dissipation. [0066] 4) While some ESD protection devices are based on semiconductor material (e.g. conventional high speed silicon diode), other ESD protection devices use alternative materials, e.g. ceramics. Such alternative materials may allow direct printing of the ESD device onto the circuit board.

[0067] FIG. 3 shows a schematic block diagram of a phase shifter 120 according to a further embodiment. The phase shifter 120 comprises a signal input 102, a signal output 104, an ESD protection circuit 106, a first signal path 108_1 between the signal input 102 and the signal output 104 and a second signal path 108_2 between the signal input 102 and the signal output 104. The ESD protection circuit 106 comprises a two port device 110, the two port device 110 being switchable between a high impedance state and a low impedance state. The second signal path 108_2 comprises a delay line 112 configured to provide a phase shift to the signal transmitted from the signal input 102 to the signal output 104 via the second signal path 108_2. The phase shifter 120 is configured to apply an adjustable phase shift to the signal transmitted from the signal input 102 to the signal output 104 by switching the two port device 110 from the low impedance state to the high impedance state.

[0068] Note that the phase shifter 100 shown in FIGS. 1 and 2 and the phase shifter 120 shown in FIG. 3 may be combined with each other, for example, leading to a phase shifter similar to the phase shifter 100 shown in FIGS. 1 and 2 additionally comprising a n+1 signal path 108_n+1 comprising a n+1 delay line 112_n+1.

[0069] Embodiments of phase shifters of the invention may be applied in wireless communication devices and systems, for example in satellite communications, especially beam forming and tracking for moving receivers or transmitters, or other communication systems or devices including mobile phones, wireless local area networks, etc., that benefit from improved antenna gain and/or directivity. It is however, clear for those skilled in the art that the invention may find application in any field were adjustable phase shifters are needed.

[0070] Fully electronically steerable antennas can be implemented as “Phased Array”, where the antenna consists of a number of antenna elements and where the signal received or transmitted by each element is individually shifted in phase. Direction of the pointing is a function of these phase shifts, resulting from constructive and destructive combining of the transmitted or received signals. This implementation of the phase shifter uses a set of different length delay lines, with one of the delay lines being used at a time. ESD protection circuits are used to implement the “electronic switch”. Use of ESD protection circuits in this application is beneficial over the known state of the art (e.g. using PIN diodes, transistors, MEMS or discrete switches), due to the advantageous high frequency properties (conducting path optimized for high speed transients, low parasitic capacitance, optimized size and footprint) of such devices, the comparable low complex control and device cost.

[0071] While this invention has been described in terms of several embodiments, there are alterations, permutations, and equivalents which fall within the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and compositions of the present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations and equivalents as fall within the true spirit and scope of the present invention.