Low pressure wire ion plasma discharge source, and application to electron source with secondary emission
10763070 · 2020-09-01
Assignee
Inventors
Cpc classification
H01J35/20
ELECTRICITY
H01S3/09713
ELECTRICITY
International classification
H01J35/04
ELECTRICITY
Abstract
Disclosed is a low pressure wire ion plasma discharge source including an elongated ionization chamber housing at least two parallel anode wires extending longitudinally within the ionization chamber. A first of the at least two anode wires is connected to a DC voltage supply and a second of the at least two anode wires is connected to a pulsed voltage supply.
Claims
1. A low pressure wire ion plasma discharge source comprising: an elongated ionization chamber housing at least two anode wires extending longitudinally within the ionization chamber; a DC voltage supply; and a pulsed voltage supply, wherein a first of said at least two anode wires is connected to the DC voltage supply and a second of said at least two anode wires is connected to the pulsed voltage supply simultaneously, such that a first continuous voltage is able to be continuously applied to the first anode wire while a second pulsed voltage is able to be applied to the second anode wire, wherein the DC voltage supply outputs the first continuous voltage and the pulsed voltage supply outputs the second pulsed voltage.
2. The low pressure wire ion plasma discharge source according to claim 1, further comprising a plurality of anode wires connected to the DC voltage supply and/or a plurality of anode wires connected to the pulsed voltage supply.
3. The low pressure wire ion plasma discharge source according to claim 1, wherein the direct current generated by the DC voltage supply is equal to or lower than 1 m A/cm.
4. The low pressure wire ion plasma discharge source according to claim 1, wherein the pulsed voltage supply generates a pulsed large current of 1 to 5 A/cm or more.
5. The low pressure wire ion plasma discharge source according to claim 1, wherein the ionization chamber comprises a main elongated chamber and an elongated auxiliary chamber in fluidic communication along their entire lengths through a slit, the at least one pulsed voltage supplied anode wire extending longitudinally in the main chamber and the at least one DC voltage supplied anode wire extending longitudinally in the auxiliary chamber.
6. An electron source with secondary emission under ion bombardment in a low pressure chamber, the electron source comprising: a low pressure wire ion plasma discharge source comprising: an elongated ionization chamber housing at least two anode wires extending longitudinally within the ionization chamber, a DC voltage supply, and a pulsed voltage supply, wherein a first of said at least two anode wires is connected to the DC voltage supply and a second of said at least two anode wires is connected to the pulsed voltage supply simultaneously, such that a first continuous voltage is able to be continuously applied to the first anode wire while a second pulsed voltage is able to be applied to the second anode wire, wherein the DC voltage supply outputs the first continuous voltage and the pulsed voltage supply outputs the second pulsed voltage.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The present invention will now be described in detail with reference to the drawings which represent:
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(10) In
(11) A first anode wire is connected to a DC voltage supply 4 intended to apply to the wire a high DC voltage (typically 0.5 to 1 kV) and a low DC current (typically 1 mA/cm).
(12) The second anode wire is connected to a pulsed voltage supply 5 intended to apply a single high voltage (typically 1-5 kV) and high current (typically 1 A/cm; <10 s) pulse.
(13) By continuously applying a high voltage to one anode wire, thus creating a continuous current through said wire, when subsequently applying a high DC voltage to the other wire, a stable WIP discharge with almost no jitter is safely obtained. Of course, number and positioning of the anode wires of each type (DC and pulsed) can be chosen to optimize ion density and uniformity. Also, when several anode wires supplied with a pulsed high voltage are used, pulsed high voltage can be supplied to a same single end of the wires, both ends of the wires or an opposite end of each wire.
(14) In a specific embodiment, as shown in
(15) Main chamber 11 houses two parallel anode wires 14a, 14b extending longitudinally within the chamber (of course, only one anode or more than two anode wires may also be used).
(16) Auxiliary chamber 12 houses an anode wire 15 extending longitudinally therein (of course, more than one anode wire may be disposed within the auxiliary chamber 12.
(17) The anode wire(s) 15 located within the auxiliary chamber 12 is connected to a high voltage/low current DC supply (as shown in
(18) The elongated main and auxiliary chambers may have any suitable shapes such as parallelepipedic or cylindrical shapes. The overall longitudinal length of the main and auxiliary chambers is typically 1 m or more.
(19) In reference with
(20) 1. Ionization Camber Characteristics Ionization chamber: The chamber has a parallelepipedic shape with the following typical dimensions: length 130 cm, width 4 cm and height 4 cm. Anode Wires DC voltage anode wire: one DC wire, typically 200 m in diameter Pulsed voltage anode wire: two Pulsed wires, typically 300 m in diameter DC supply (HVPS-1) with the following characteristics: Output high voltage typically 2 kV; Controllable Output current that can be limited to typically 0.3 mA for 1.30 m wire length (hence0.3 mA/m) thus keeping the DC plasma in constricted mode; Pulsed power supply with the following characteristic (see
(21) 2. Operation Upon startup (T0), a high DC voltage (typically 2 kV) is applied to one wire. After some time (T1), the plasma is created around the wire and current flows. The power supply current limit is set at a value low enough to maintain the DC plasma in constricted mode and high enough to generate enough charges for the stable formation of the pulsed WIP. Typical current setpoint may depends on wire diameter and chamber geometry (distance wirewall, distance between wires). For a DC wire of 200 m diameter, 1.5 m length, positioned at 1 cm of the chamber walls, current setpoint is 0.1 mA. Once the said plasma is established, power supply voltage drops at a value depending on the plasma impedance, typically 1 kV. This DC plasma is sustained continuously during the operation of the device. At T2, HVPS-1 is charging capacitor C to a set high voltage, typically 5 kV. Once the capacitor C is charged, at T3, the switch S is closed and subsequently, the Pulsed wire is submitted to the same high voltage. The voltage rise time depends on the circuit physical characteristics, designed to be fast (typically <1 s) At T4, the high voltage appearing on the pulsed wire is forming the pulsed WIP plasma and a high current starts flowing in the ionization chamber, creating high ion density during a time that depends on the pulse power supply design (typically a few s). At T5, the electrical energy stored in capacitor C has been fully transferred to the plasma and the pulsed current stops At T6, after a time delay precisely controlled, a negative high voltage pulse (typically 100 kV) is applied to the cathode, accelerating the ion plasma, creating secondary electrons and subsequent X-ray emission. At T7, controlled depending on the desired repetition rate of the X-ray source, the cycle (starting at T2) is repeated
(22) Typical Delays: DC plasma inception (T1-T0): non critical (only at startup), typically <1 s Charge time of the capacitor C (T3-T2): must be shorter than the desired time between successive X-ray pulses, typically <100 ms for 10 Hz operation. Rise time of the voltage across the pulse wire (T4-T3): must be fast enough to efficiently form the pulse plasma. Depends on the circuit parameters (switch closing time, inductance), typically <1 s. Duration of the WIP plasma (T5-T4): typically 2 s Delay Pulsed WIP plasmae-beam (T5-T6): typically 5 s Repetition rate (T7-T2): typically 1-100 Hz (0.01-1 s)
(23) The sequence and waveforms for operation are shown in
(24)