MAGNETRON SPUTTERING SCANNING METHOD FOR MODIFYING SILICON CARBIDE OPTICAL REFLECTOR SURFACE AND IMPROVING SURFACE PROFILE

Abstract

A magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile includes (1) for a silicon carbide plane mirror to be modified, first utilizing diamond micro-powders to grind and roughly polish an aspherical silicon carbide reflector with a conventional polishing or CCOS numerical control machining method; (2) after the surface profile precision of the silicon carbide reflector satisfies a modification requirement, utilizing a strip-shaped magnetron sputtering source to deposit a compact silicon modification layer on the surface of the silicon carbide reflector; (3) then, utilizing a circular sputtering source to modify and improve the surface profile of the reflector; and (4) finally, finely polishing the modification layer, and achieving the requirements for machining the surface profile and roughness of the reflector.

Claims

1. A magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile, comprising: (1) utilizing diamond micro-powders to grind and roughly polish a surface an aspherical silicon carbide reflector with a conventional polishing or CCOS numerical control machining method; (2) after surface profile precision of the aspherical silicon carbide reflector satisfies a modification requirement, utilizing a strip-shaped magnetron sputtering source to deposit a compact silicon modification layer on the surface of the aspherical silicon carbide reflector; (3) after step (2), utilizing a circular sputtering source to modify and improve a surface profile of the aspherical silicon carbide reflector; and (4) after step (3), finely polishing the modification layer, and achieving the requirements for machining the surface profile and roughness of the reflector.

2. The magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile according to claim 1, wherein the magnetron sputtering sources in steps (2) and (3) are respectively in a strip shape and a circular shape; the size of a long side of the strip-shaped sputtering source is greater than the caliber of the silicon carbide reflector surface to be modified, so as to facilitate initial growth of the silicon carbide reflector surface modification layer; the target calibers of the circular sputtering source have a variety of specifications including 40 mm, 60 mm and 80 mm, so as to match the silicon carbide reflectors in different calibers; a magnetic field structure of the circular sputtering source is optimized, such that a thicknesses of the manufactured modification layer are in a Gaussian distribution, so as to facilitate the surface profile improvement of the silicon carbide reflector surface.

3. The magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile according to claim 1, wherein before step (1), the silicon carbide reflector is primarily machined to /10 (RMS), and then surface modification and surface profile improvement is performed.

4. The magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile according to claim 1, wherein step (2) further includes: first initially growing the silicon carbide reflector surface modification layer, and using the strip-shaped magnetron sputtering source in a reciprocative manner; a sputtering material is polycrystalline silicon, and a thickness of a film layer is 2 m-6 m.

5. The magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile according to claim 1, wherein step (3) further includes: utilizing the circular sputtering source according to a height distribution situation of the surface profile of the silicon carbide reflector, setting, by a computer, a movement scanning trajectory of a circular silicon target on the surface of the silicon carbide reflector and residence time of the silicon target at different positions on the surface of a workpiece, and improving the surface profile of the silicon carbide reflector surface.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG. 1 is a schematic view of a magnetron sputtering scanning and coating device;

[0023] 1 is a magnetron sputtering source system; 2 is a substrate baking system; 3 is a silicon carbide reflector clamping system; 4 is a vacuum chamber switching system; 5 is a three-dimensional motion system; and 6 is a strip-shaped magnetron sputtering target.

[0024] FIG. 2 is a schematic view of relative positions of a silicon carbide substrate and a silicon target;

[0025] FIG. 3 is a reference diagram of a movement trajectory of the silicon target on the silicon carbide substrate;

[0026] 1 is a silicon carbide reflector; 2 is a movement trajectory of the silicon target.

[0027] FIG. 4 is a reference diagram comparing the surface qualities of a silicon carbide sample reflector before and after the modification;

[0028] FIG. a is a microscope 500 times image before the modification; and FIG. b is a microscope 500 times image after the modification; it can be seen that a stepped structure is formed due to different removal rate during polishing.

[0029] FIG. 5 is a reflectance ratio curve of the silicon carbide sample reflector before and after the modification.

DETAILED DESCRIPTION

[0030] The present invention will be further described hereafter in combination with the drawings and specific embodiments.

Embodiment

[0031] For a silicon carbide plane mirror to be modified with a caliber in 300 mm diameter, first utilizing diamond micro-powders to grind and roughly polish an aspherical silicon carbide reflector with a small polishing head numerical control machining method; after the surface profile precision of the silicon carbide reflector satisfies a modification requirement (the precision achieve /10, RMS), utilizing a strip-shaped magnetron sputtering source to deposit a compact 4 m thick silicon modification layer on the surface of the silicon carbide reflector; then, utilizing a circular sputtering source to modify and improve the surface profile of the reflector; and finally, finely polishing the modification layer, and achieving the requirements for machining the surface profile and roughness of the reflector.

[0032] FIG. 1 is a schematic view of a magnetron sputtering scanning and coating device. After silicon carbide is clamped in a vacuum chamber, relative positions of a silicon target and a silicon carbide substrate are adjusted; a movement trajectory of the silicon target and residence time thereof on the surface of the silicon carbide are set by means of a computer program; and a compact silicon modification layer is deposited on the silicon carbide substrate.

[0033] FIG. 2 shows the relative positions of the silicon target and the silicon carbide substrate in the magnetron sputtering coating process. In the figure, the surface of the silicon carbide plane mirror substrate is ragged. A silicon modification layer is coated on the surface of the silicon carbide substrate with the circular magnetron sputtering source scanning method, so as to fill and level up low spots, thus enabling the silicon modification layer on the surface of the silicon carbide to be compact and uniform.

[0034] As shown in FIG. 3, in the coating process, a computer controls a movement trajectory of the silicon target on the surface of the silicon carbide, improves the ragged phenomenon of the silicon carbide substrate by controlling the residence time of the circular silicon target at different positions on the silicon carbide substrate, so as to improve the surface profile precision of the silicon carbide surface.

[0035] As shown in FIG. 4, after optical polishing, micro-structures of the silicon carbide sample reflector before and after the modification can be viewed; it can be seen from the figure that the finely polished surface of the silicon carbide sample reflector before the modification still has a lot of defects, and is not compact enough. After a compact silicon modification layer is deposited on the surface of the silicon carbide with the magnetron sputtering method of the present invention, the finely polished silicon carbide surface almost has no defect, and the compact degree of the surface structure is greatly improved.

[0036] FIG. 5 is a reflectance ratio curve of the tested silicon carbide sample reflector before and after the modification. It can be clearly seen from the curve that the surface reflectance ratio of the modified silicon carbide sample reflector is obviously greatly improved.

[0037] The magnetron sputtering scanning method for modifying a silicon carbide reflector surface and improving surface profile provided by the present invention better solves the problem that the silicon carbide is hard to machine; furthermore, the method has a simple process, improves the surface profile precision of the reflector surface while modifying the reflector surface, and improves machining efficiency. The deposited silicon modification layer has a stable and compact structure, can satisfy a higher silicon carbide reflector surface roughness requirement after fine polishing, and can obtain a better quality silicon carbide reflector.