WAVELENGTH LOCKER
20200272019 ยท 2020-08-27
Inventors
- Yang Liu (Elmhurst, NY)
- Yangjin Ma (Brooklyn, NY)
- Ran Ding (New York, NY, US)
- Thomas Wetteland Baehr-Jones (Arcadia, CA)
- Saeed Fathololoumi (San Gabriel, CA, US)
- Kishore Padmaraju (New York, NY, US)
Cpc classification
G02F1/0136
PHYSICS
H04B10/07
ELECTRICITY
G01J3/26
PHYSICS
International classification
G01J3/26
PHYSICS
H04B10/07
ELECTRICITY
Abstract
Conventionally, wavelength locking and monitoring has been achieved used various components, including calibrated etalon filters, gratings, and arrays of color filters, which offer fairly bulky solutions that require complicated controls. An improved on-chip wavelength monitor comprises: a combination comb filter comprising a plurality of comb filters, each for receiving a test beams, and each comb filter including a substantially different FSR, e.g. 10 to 20 the next closest FSR. A controller dithers a phase tuning section of each comb filter to generate a maximum or minimum output in a corresponding photodetector indicative of the wavelength of the test signal.
Claims
1. An apparatus, comprising a laser source to generate a laser signal and a wavelength monitor, wherein the wavelength monitor comprises: a tap for tapping a portion of the laser signal from the laser source to form a test signal; a splitter for splitting the test signal into a plurality of test beams; a combination comb filter comprising a plurality of comb filters, each one of the plurality of comb filters connected to receive a respective one of the test beams, each comb filter having a different FSR; a plurality of photodetectors, each one of the photodetectors configured for measuring light output from a respective one of the plurality of comb filters; a plurality of phase tuning sections, each of the plurality of phase tuning sections for tuning a corresponding one of the comb filters; and a controller to control the plurality of phase tuning sections to determine a wavelength of the test signal by generating a maximum output or a minimum output in some of the plurality of photodetectors, and configured to tune the laser source based on the determined wavelength of the test signal.
2. The apparatus according to claim 1, wherein the controller is configured to determine the wavelength of the test signal based on values of pre-calibration values of electrical signals for controlling the some of the phase tuning sections to tune corresponding ones of the plurality of comb filters.
3. The apparatus according to claim 2, wherein the controller is configured to dither the some of the plurality of phase tuning sections such that some of the test beams are locked to a peak or a null point of the corresponding ones of the plurality of comb filters.
4. The apparatus according to claim 1, wherein the plurality of comb filters comprises at least a first of the comb filters and a second of the comb filters; and wherein the FSR of the second of the comb filters is at least 10 times larger than the FSR of the first of the comb filters.
5. The apparatus according to claim 4, wherein the plurality of comb filters further comprises a third of the comb filters; wherein the FSR of the third of the comb filters is at least 10 times larger than the FSR of the second of the comb filters.
6. The apparatus according to claim 5, wherein the FSR of the first of the comb filters is between 10 GHz to 40 GHz; wherein the FSR of the second of the comb filters is between 100 GHz to 800 GHz; and wherein the FSR of the third of the comb filters is between 2000 GHz to 16000 GHz.
7. The wavelength monitor according to claim 5, wherein each of the plurality of phase tuning sections are configured to provide wavelength accuracy of at least 10 to 30 times finer than the first FSR, the second FSR and the third FSR.
8. The apparatus according to claim 1, wherein each one of the plurality of comb filters comprises a ring resonator.
9. The apparatus according to claim 8, wherein at least one of the ring resonators comprises waveguides with positive and negative thermal coefficients on each side thereof to minimize temperature sensitivity between each side.
10. The apparatus according to claim 8, wherein each ring resonator comprises a drop port and a through port; and wherein one of the plurality of photodetectors is coupled to each drop port.
11. The apparatus according to claim 1, wherein each of the plurality of comb filters comprises a Mach-Zehnder filter.
12. The apparatus according to claim 11, wherein at least one of the Mach-Zehnder filters comprises a first arm and a second arm; and wherein the first arm includes a first polarization rotator for rotating a polarization of light in the first arm, and a second polarization rotator for rotating back the polarization of light in the first arm.
13. The apparatus according to claim 12, wherein the first arm comprises Silicon and the second arm comprises Silicon Nitride.
14. The apparatus according to claim 12, wherein the first arm comprises a strip waveguide, and the second arm comprises a rib waveguide.
15. The apparatus according to claim 12, wherein the first arm includes a width that is different than a width of the second arm.
16. The apparatus according to claim 1, further comprising a temperature sensor; wherein the temperature sensor comprises at least three temperature sensors; and wherein a heat source is placed outside an area defined by the at least three sensors.
17. The apparatus according to claim 16, wherein each of the at least three temperature sensors comprises two diodes with different lengths.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] The invention will be described in greater detail with reference to the accompanying drawings which represent preferred embodiments thereof, wherein:
[0012]
[0013]
[0014]
[0015]
[0016]
[0017]
DETAILED DESCRIPTION
[0018] While the present teachings are described in conjunction with various embodiments and examples, it is not intended that the present teachings be limited to such embodiments. On the contrary, the present teachings encompass various alternatives and equivalents, as will be appreciated by those of skill in the art.
[0019] An embodiment of the present invention, relates to a novel compact on-chip wavelength locker (WLL) 1 based on integrated components to determine absolute wavelength of incoming light from a laser source 2 with minimum back reflection, high accuracy and stable temperature performance. The purpose of the WLL 1 is specifically to monitor and identify, with great accuracy, the wavelength of an incoming laser signal 7. One possible use for the WLL system 1 is to enable the laser source 2 to be tuned by control system 3 to a very precise wavelength, since now there is a means of seeing the current wavelength of the laser 2. The WLL 1 would be most suitable for different classes of tunable lasers 2, including integrated InP based photonic integrated circuits, hybrid III/V, and Silicon Photonic devices.
[0020] With reference to
[0021] During operation, the control system 3 tunes each comb filter 4.sub.1 to 4.sub.n by dithering a phase shifter, and locking each individual test beam 7.sub.1 to 7.sub.n to a high fineness peak or a null point of the respective comb filter 4.sub.1 to 4.sub.n. Once the comb filter 4.sub.1 to 4.sub.n is locked, the value of a pre-calibrated electrical signal used to tune the comb filters 4.sub.1 to 4.sub.n is used by the controller 3 to determine the absolute wavelength of the test signal 7.
[0022] To lock each comb filter 4.sub.1 to 4.sub.n, the control system 3 tunes the phase of each comb filter 4.sub.1 to 4.sub.n using control signals 9.sub.1 to 9.sub.n to maximize or minimize a current generated in a corresponding photodetector 11.sub.1 to 11.sub.n depending on whether a null point or a peak point of the comb filter 4.sub.1 to 4.sub.n is found, i.e. maximum transmission or minimum transmission of light through the comb filter 4.sub.1 to 4.sub.n.
[0023] In the example plot illustrated in
[0024] Based on this method and depending on the accuracy of electronics, wavelength accuracy as small as a fraction of the smallest FSR may be achieved. The fraction is as many phase levels as the electronics can detect within each a range. Hence each phase section needs to be tuned for a full 2. Obviously electronics with lower phase noise will be able to detect finer phases. For instance, it is possible to achieve wavelength accuracy at least 10 to 30 times, preferably 20 times, finer than the FSR, e.g. achieving 18 phase accuracy.
[0025] In order to maximize the wavelength range of WLL 1, the illustrated embodiment uses multiple filters, e.g. 4.sub.1 to 4.sub.3, with different values of FSRs, e.g. FSR1, FSR2 and FSR3, respectively. The finest filter 4.sub.1 detects as many wavelength values within one FSR as phase levels, e.g. 20 times in the example mentioned above. The second filter 4.sub.2 may consequently have an FSR that is equal to or larger than fine filter 4.sub.1 by as much as the detectable phase levels. For the quoted example, the second FSR2 may be 10 to 30 times, preferably 20 times, larger than the fine FSR1, resulting in a detection wavelength range as large as 400 times the wavelength resolution. This scheme may be repeated as many time as possible with as many comb filters 4.sub.1 to 4.sub.n as possible to cover the wavelength range of interest. The final WL range will be the FSR FSRn of the coarsest comb filter 4.sub.n.
[0026] The controller 3 may actuate and control the combined comb filter 5 continuously throughout the life of the device, i.e. analog control, utilizing some form of feedback loop. Alternatively, the controller 3 may actuate and control the combined filter 5 whenever a wavelength enquiry is made, e.g. according to a predetermined timing protocol, such as upon start up, and/or at predetermined time periods
[0027] During use, the controller 3 may actuate and control all of the filters 4.sub.1 to 4.sub.n simultaneously. For example, each filter will determine the wavelength of the test beam 7.sub.1-7.sub.n within the filters given accuracy and resolution. Then based on phase bias (electrical) readings of each filter 4.sub.1 to 4.sub.n, the controller 3 calculates the precise wavelength of the test signal 7. Alternatively, the controller 3 may tune the coarsest filter 4.sub.n, e.g. FSR3, first to determine the wavelength of the test beam 7.sub.n within a first broad range, e.g. 400 GHz for an FSR3 of 8000 GHz and 20 phase levels. Then, knowing the first broad range, the controller 3 many tune one or more intermediate filters 4.sub.2 to determine the wavelength of the test beam 72 within a second intermediate range within the first broad range, e.g. 20 GHz for an FSR2 of 400 GHz and 20 phase levels. Finally, knowing the intermediate range, the controller 3, tunes the finest filter 4.sub.1 to determine the wavelength of the test beam 7.sub.1 to within a fine range within the intermediate range, e.g. 1 GHz for an FSR3 of 20 GHz and 20 phase levels.
[0028] The on-chip comb filters 4.sub.1 to 4.sub.n may be implemented using, inter alia, unbalanced Mach-Zehnders (MZ) filter 30 (
[0029] With reference to
[0030] In order to actively balance the losses between each of the first and second arms 31 and 32, a variable optical attenuator 35 may be provide in one or both of the first and second arms 31 and 32. In order to more passively balance losses between each of the first and second arms, due to components found in either of the first and second arms 31 and 32, a balancing element may be provided in each arm 31 and 32 of the MZ filter 30. For example, a balancing element 34 may be provided on the first arm 31 for tuning the loss of arm 31 by including similar components, e.g. transitions between different waveguide materials, that are found in the second arm 32. Moreover, a second variable optical attenuator (VOA) 36 may be provided on the first arm 32 to balance the losses caused by the first VOA 34 in the first arm 31. The test signal 7.sub.n enters the input port 37 from the splitter 8, and exits the output port 38 to the corresponding photodetector 11.sub.n.
[0031] The MZ filter 30 may be constructed to have minimum thermal cross talk between the phase tuning section 33 and the rest of the MZ waveguides 31 and 32. Accordingly, the first and second arms 31 and 32 may each include a coiled section, disposed as far away, e.g. >500 m, from any heat source, e.g. the phase tuning section 33, as possible, to minimize the thermal gradient across each arm. The biggest advantage of MZ filters 30 is that they are not reflective by nature and hence no isolator will be needed for the integrated tunable laser 2. The type of waveguide, e.g. shape and/or material, on each arm may be constructed to reduce temperature sensitivity of the filter response and device back reflection. In order to have smaller temperature sensitivity, waveguides with different properties and/or types may be used for the first and second arms 31 and 32 in the same MZ filter 30 that further boosts the sensitivity.
[0032] The following equation (1) may be used to calculate the FSR of each MZ filter 30, and the following equation (2) may be used to calculate the temperature sensitivity /T, i.e. change in wavelength per change in temperature for the MZ filter 30, wherein n.sub.g is the group index, n.sub.1 and n.sub.2 are the index of refraction for the first and second arms 31 and 32, respectively, and L.sub.1 and L.sub.2 are the lengths of the first and second arms 31 and 32, respectively.
[0033] Accordingly, to minimize the temperature sensitivity, the numerator of equation (2) should be minimized, whereby the change in index with temperaturethe length of the first arm 31 should be substantially equal to the change in index with temperaturethe length of the second arm 32. There are several different ways in which to balance this equation, including but not limited to, fabricating the first and second arms 31 and 32 out of different materials, e.g. Silicon (Si) and Silicon Nitride (SiN). The shape, i.e. cross-section, of the first and second arms 31 and 32 may also be different to provide a different change in index with temperature, and therefore minimal temperature sensitivity. For example: one of the first and second arms 31 and 31 may comprise a rectangular or ridge cross-section with first height and width dimensions, while the other arm may comprise a rectangular or ridge cross-section with at least one of second different height and a second different width. In another example the cross-section of the first and second arms 31 and 32 may have different shapes, e.g. one of the first and second arms 31 and 32 may include a rectangular cross section (strip), while the other includes a ridge or rib waveguide cross-section, comprising a stepped or inverted T structure, with a slab portion and a ridge portion. In another possible embodiment, the light in one of the first and second arms 31 and 32 may be rotated from the usual mode, e.g. TE, to the orthogonal mode, e.g. TM, using a first polarization rotator 39a at the beginning of the first arm, and then rotated back to the original polarization, e.g. TE, by a second polarization rotator 39b, at the end of the first arm 31 Different modes may be used because the derivative of n.sub.eff with respect to temperature is significantly different for the TM mode as compared to the TE mode.
[0034] In an example embodiment, a first comb filter 4.sub.1 comprises an FSR.sub.1 of 16 GHz at 1545 nm, and a length L.sub.1 of a first TE0 waveguide 31 of 27.137 mm and a length L.sub.2 of a second TM0 waveguide 32 of 38.103 mm. A second comb filter 4.sub.2 comprises an FSR.sub.2 of 160 GHz at 1545 nm, and a length L.sub.1 of a first TE0 waveguide 31 of 2.7137 mm and a length L.sub.2 of a second TM0 waveguide 32 of 3.8103 mm. The plot below of d/dT in m/K vs Wavelength in m illustrates that a typical MZ filter 30 with similar first and second waveguides 31 and 32 has a consistently large change in wavelength per change in temperature, whereas a thermally balanced MZ filter 30 has a much smaller temperature sensitivity, especially in the C-band (1.53 m-1.565 m), hence it requires looser temperature control.
[0035] Alternatively, or in combination with the aforementioned thermally balanced waveguides, in order to more accurately compensate for thermal effects on the MZ filter 30, a plurality of temperature sensors 41, e.g. two to four, ideally three, may be used to map the temperature of the WLL 1. In order to make interpolation within the sensors 41 more accurate, the heat source, e.g. phase section 33, is placed outside of the area defined by the sensors 41, e.g. three sensors 41 define a triangle, four sensors 41 define a quadrilateral. Each temperature sensor 41 may comprise two diodes, each with a different length in order to make differential detection and achieve higher reading accuracy. Further accuracy is achieved by using four-point-detection scheme on each diode. From the temperature readings of the plurality of sensors 41, a temperature profile of the MZ filter 30 may be determined by the control system 3. Based on the temperature profile, the control system 3 may then compensate for the thermal effects by adjusting the peaks of the comb filters 4.sub.1 to 4.sub.n, i.e. the ultimate wavelength reading of the test signals 7.sub.1 to 7.sub.n.
[0036] With reference to
[0037] For resonance to take place in the ring resonator 51, the following resonant condition must be satisfied:
.sub.m=2r n.sub.eff/m
[0038] Wherein r is the radius of the ring resonator and n.sub.eff is the effective index of refraction of the waveguide material making up the ring resonator 51.
[0039] Where .sub.m is the resonant wavelength, and m is the mode number of the ring resonator 51. Accordingly, in order for light to interfere constructively inside the ring resonator 51, the circumference of the closed loop 56 must be an integer multiple of the wavelength of the light. As such, the mode number must be a positive integer for resonance to take place. As a result, when the incident light contains multiple wavelengths, only the resonant wavelengths will be able to pass through the ring resonator 51 fully. As a result, when the wavelength of the test beam 7n matches the resonant wavelength of the ring resonator 51, a maximum transmission measurement will be detected by the photodetector 11n, whereby the value of a pre-calibrated electrical signal used to tune the ring resonator 51 is used by the controller 3 to determine the absolute wavelength of the test signal 7.sub.n.
[0040] Similar to the MZ filter 20 above, the ring resonator 51 includes at least one phase tuning section 61, e.g. thermo-optic or electro-optic, within the closed loop 56 to enable the aforementioned tunability. The phase tuning section 61 also should include waveguides with low back reflection and small thermal coefficient. The ring resonator 51 may also be comprised of waveguides 52, 56 and 57 that result in minimal thermal effects. For example: if combination of positive and negative thermal coefficient waveguides are used. One advantage of the ring resonator devices 51 over the MZ filter 20 based devices is that the resonator device 51 may be accessed both via the through port 54 and the drop port 58, which provides different signal amplitudes at high fineness section. For example, providing the photodetector 11.sub.n or an additional photodetector optically coupled to the through port 54 may provide an indication of when light from the test signal 7.sub.n at the resonant wavelength of the ring resonator 51 is minimized or null at the through port 54, and therefore fully passed to the drop port 58. Accordingly, the through port 54 may provide an alternative location for the photodetector 11.sub.n or a secondary location for an additional photodetector providing a secondary or confirmation measurement that the ring resonator 51 is locked to the wavelength of the laser signal 7.
[0041] As mentioned above with reference to the MZ filter 20, the ring resonator device 51 may also be temperature sensitive. Despite constructing the waveguides 52, 56 and 57, of materials to minimize thermal effects, the absolute wavelength of the high fineness point may slightly change with temperature, resulting in reading error. Accordingly, as with the MZ filter 20, a few on-chip temperature sensing devices 62 may be used around each ring resonator 51 to closely monitor and control its temperature. The polygon formed by temperature sensing devices 62 should contain no heat sources to allow for thermal interpolation anywhere inside such shape. Each temperature sensor 62 may comprise two diodes, each with a different length in order to make differential detection and achieve higher reading accuracy. Further accuracy is achieved by using four-point-detection scheme on each diode. From the temperature readings of the plurality of sensors 62, a temperature profile of the ring resonator filter 51 may be determined by the control system 3. Based on the temperature profile, the control system 3 may then compensate for the thermal effects by adjusting the peaks of the comb filters 4.sub.1 to 4.sub.n, i.e. the ultimate wavelength reading of the test signals 7.sub.1 to 7.sub.n.
[0042] Each filter device, e.g. MZ filter 30 or ring resonator 51, requires calibration to define the precise location of comb filter lines depending on the measured temperatures, as well as the applied current to the phase tuning section 33 or 61. This calibration data is used to calculate the absolute wavelength based on the phase shifter bias and temperature for which the filter, e.g. MZ filter 30 or ring resonator 51, is locked to the test signal 7.sub.1 to 7.sub.n.
[0043]
[0044] The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.