Zinc nitride compound and method for producing same

Abstract

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Claims

1. A zinc nitride compound represented by the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg.

2. A zinc nitride compound represented by the chemical formula ZnTiN.sub.2.

3. A zinc nitride compound represented by the chemical formula Zn.sub.2X.sup.3N.sub.3 wherein X.sup.3 is V, Nb, or Ta.

4. A zinc nitride compound represented by the chemical formula Zn.sub.3WN.sub.4.

5. The zinc nitride compound according to claim 1, being a compound semiconductor.

6. The zinc nitride compound according to claim 2, being a compound semiconductor.

7. The zinc nitride compound according to claim 3, being a compound semiconductor.

8. The zinc nitride compound according to claim 4, being a compound semiconductor.

9. An electronic device comprising an active layer comprising the compound semiconductor according to claim 5.

10. An electronic device comprising an active layer comprising the compound semiconductor according to claim 6.

11. An electronic device comprising an active layer comprising the compound semiconductor according to claim 7.

12. An electronic device comprising an active layer comprising the compound semiconductor according to claim 8.

13. The electronic device according to claim 9, wherein the electronic device emits light in the visible range under current injection.

14. The electronic device according to claim 10, wherein the electronic device emits light in the visible range under current injection.

15. The electronic device according to claim 11, wherein the electronic device emits light in the visible range under current injection.

16. The electronic device according to claim 12, wherein the electronic device emits light in the visible range under current injection.

17. The electronic device according to claim 9, wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

18. The electronic device according to claim 10, wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

19. The electronic device according to claim 11, wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

20. The electronic device according to claim 12 wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1A and FIG. 1B show the basic electronic properties of zinc nitride compounds according to the present invention.

(2) FIG. 2A shows the crystal structure of the zinc nitride compound represented by the chemical formula CaZn.sub.2N.sub.2.

(3) FIG. 2B shows the calculated phase diagram of the CaZnN system.

(4) FIG. 2C shows the band structure (conduction band and valence band) of the zinc nitride compound represented by CaZn.sub.2N.sub.2.

(5) FIG. 2D shows the phase diagram of the CaZnN system in the chemical potential space.

(6) FIGS. 3A-3E show the crystal structures of typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2.

(7) FIGS. 4A-4G show the calculated phase diagrams of the systems such as the MgZnN system for the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2.

(8) FIGS. 5A-5G show the band structures (conduction bands and valence bands) of the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2.

(9) FIG. 6A and FIG. 6B show X-ray diffraction patterns of synthesis products obtained in Example 1 and Comparative Example 1.

(10) FIGS. 7A-7C show absorption spectra of the synthesis products obtained in Example 1 and Comparative Example 1.

(11) FIG. 8 shows X-ray diffraction patterns of a synthesis product obtained in Example 2.

(12) FIG. 9A and FIG. 9B show photoluminescence spectra of the synthesis product obtained in Example 2.

(13) FIG. 10 shows X-ray diffraction patterns of a purified powder product obtained in Example 2.

DESCRIPTION OF EMBODIMENTS

(14) The zinc nitride compound of the present invention can be represented by any one of the following chemical formulae.

(15) A) A zinc nitride compound represented by the chemical formula CaZn.sub.2N.sub.2.

(16) B) A zinc nitride compound represented by the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg.

(17) C) A zinc nitride compound represented by the chemical formula Zn.sub.3LaN.sub.3.

(18) D) A zinc nitride compound represented by the chemical formula ZnTiN.sub.2.

(19) E) A zinc nitride compound represented by the chemical formula ZnX.sup.2N.sub.2 wherein X.sup.2 is Zr or Hf.

(20) F) A zinc nitride compound represented by the chemical formula Zn.sub.2X.sup.3N.sub.3 wherein X.sup.3 is V, Nb, or Ta.

(21) G) A zinc nitride compound represented by the chemical formula Zn.sub.3WN.sub.4.

(22) The zinc nitride compounds A) to G) according to the present invention are novel compounds which are not included in Inorganic Crystal Structure Database (ICSD). The basic electronic properties of the zinc nitride compounds A) to G) according to the present invention are shown in FIG. 1A-B. FIG. 1A shows the band gaps (.circle-solid. represents a direct band gap, while represents an indirect band gap), and FIG. 1B shows the effective masses of holes and electrons. The zinc nitride compounds according to the present invention are compound semiconductors. In particular, the zinc nitride compound A) or C) according to the present invention which is represented by the chemical formula CaZn.sub.2N.sub.2 or Zn.sub.3LaN.sub.3 is a direct band gap compound semiconductor and suitable for use, for example, in light-emitting devices and thin-film solar cells.

(23) The space groups to which the zinc nitride compounds according to the present invention belong are as follows.

(24) The zinc nitride compound A) belongs to the space group P.Math.3m1.

(25) The zinc nitride compound B) belongs to the space group I4/mmm.

(26) The zinc nitride compound C) belongs to the space group P6.sub.3/m.

(27) The zinc nitride compound D) belongs to the space group Pna2.sub.1.

(28) The zinc nitride compound E) belongs to the space group P3m1.

(29) The zinc nitride compound F) belongs to the space group Cmc2.sub.1.

(30) The zinc nitride compound G) belongs to the space group Pmn2.sub.1.

(31) Hereinafter, the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2, which is suitable as a direct band gap compound semiconductor, will be described as a representative of the zinc nitride compounds of the present invention. Understanding of the other zinc nitride compounds denoted by B) to G) can also be gained from the entire contents of the detailed description.

(32) In FIG. 2A-D, FIG. 2A shows the crystal structure of the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2, FIG. 2B shows the calculated phase diagram of the CaZnN system, FIG. 2C shows the band structure (conduction band and valence band) of the zinc nitride compound represented by CaZn.sub.2N.sub.2, and FIG. 2D shows the phase diagram of the CaZnN system in the chemical potential space. As seen from FIG. 2D, CaZn.sub.2N.sub.2 is stable at a high nitrogen chemical potential, namely at a high nitrogen partial pressure.

(33) The zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2 has a band gap of 1.9 eV. The band gap can be controlled by incorporation of Mg, Sr, Ba, or Cd, which results in a compound semiconductor represented by the chemical formula CaM.sup.1.sub.2xZn.sub.2(1-x)N.sub.2 wherein M.sup.1 is Mg or Cd and 0x1 or M.sup.2.sub.xCa.sub.1-xZn.sub.2N.sub.2 wherein M.sup.2 is Sr or Ba and 0x1 and having a band gap of 0.4 eV to 3.2 eV. CaZn.sub.2N.sub.2 can be an n-type semiconductor even when undoped, since nitrogen holes serving as shallow donors are likely to be generated in CaZn.sub.2N.sub.2. However, it is preferable to form an n-type semiconductor by doping into CaZn.sub.2N.sub.2. Furthermore, for example, a higher nitrogen partial pressure reduces carrier compensation by nitrogen holes, thus allowing the formation of a p-type semiconductor by doping into CaZn.sub.2N.sub.2.

(34) The zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2 is preferably synthesized at a high pressure of 1 GPa or more. In this case, the starting compounds, preferably Ca.sub.3N.sub.2 and 2Zn.sub.3N.sub.2, are introduced into a high-pressure synthesis apparatus and reacted typically at 800 to 1500 C. and 1 to 10 GPa for about 30 minutes to 5 hours.

(35) The resulting high-pressure synthesis product can be purified by removing zinc from the product. It is preferable to put a powder of the resulting high-pressure synthesis product and I.sub.2, for example, into a glass vessel and place the glass vessel in an atmosphere of an inert gas such as argon or nitrogen at about 15 to 30 C., preferably at room temperature, for about 5 to 10 minutes, thereby converting zinc to zinc iodide (ZnI.sub.2). The zinc iodide produced is then dissolved in a solvent such as dimethyl ether, and the solution is removed. The purpose of using an inert atmosphere is to inhibit oxidation of Zn.sup.2+ and I.sup..

(36) The zinc nitride compound of the present invention can be obtained not only by the above high-pressure synthesis but also by depositing the compound as a thin film on a substrate using a physical vapor deposition process such as sputtering, pulsed laser deposition, or vacuum deposition or a chemical vapor deposition process such as organometallic chemical vapor deposition. The substrate can be selected as appropriate depending on the intended purpose and, for example, an oxide substrate may be used.

(37) CaZn.sub.2N.sub.2 is particularly useful in that it is composed of elements abundant on the earth, it has a direct band gap, and its charge carriers have a small effective mass (the effective mass of electrons is 0.17 m.sub.0, and the effective mass of holes is 0.91 m.sub.0). The direct band gap of 1.9 eV of CaZn.sub.2N.sub.2 corresponds to the red region of visible light, and thus CaZn.sub.2N.sub.2 can be expected to show a high theoretical conversion efficiency when used as a light absorbing layer of a solar cell. An electronic device having an active layer made of CaZn.sub.2N.sub.2 is useful as an electronic device (light-emitting device) that emits light in the visible range under current injection or as an electronic device (solar cell or light sensor) that generates a photovoltage or a photocurrent by absorbing visible light.

(38) FIGS. 3A to 3E show the crystal structures of the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2 just as FIG. 2A shows the crystal structure of the zinc nitride compound A).

(39) FIGS. 4A to 4G show the calculated phase diagrams of the systems such as the MgZnN system for the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2 just as FIG. 2B shows the calculated phase diagram for the zinc nitride compound A).

(40) FIGS. 5A to 5G show the band structures (conduction bands and valence bands) of the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn.sub.2N.sub.2 just as FIG. 2C shows the band structure of the zinc nitride compound A).

INDUSTRIAL APPLICABILITY

(41) The present invention can provide a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors.

EXAMPLES

(42) Hereinafter, the present invention will be described in more detail with Examples.

Example 1

Synthesis of Zinc Nitride Compound Represented by CaZn.SUB.2.N.SUB.2

(43) Starting compounds, Ca.sub.3N.sub.2 and Zn.sub.3N.sub.2 mixed in a molar ratio Ca.sub.3N.sub.2:Zn.sub.3N.sub.2 of 1:2, were introduced into a high-pressure synthesis apparatus, which was maintained at 2.5 GPa and 1100 C. for 1 hour. The high-pressure synthesis apparatus used is a belt-type high-pressure synthesis apparatus which has a high-pressure cell as a sample holder, whose pressure control range is from 2 to 5.5 GPa, and whose temperature control range is from room temperature to 1600 C.

(44) X-ray diffraction patterns of the resulting high-pressure synthesis product are shown in FIG. 6A. About 69 wt % of the product consisted of CaZn.sub.2N.sub.2, and the rest consisted of Zn. As for the lattice parameters of CaZn.sub.2N.sub.2, the lattice parameters a and c were respectively 3.463150(44) and 6.01055(11) which differ by 0.3% from the theoretical lattice parameters a and c of 3.454 and 5.990 .

(45) Absorption spectra of CaZn.sub.2N.sub.2 as obtained through diffuse reflectance spectroscopy and calculation using the Kubelka-Munk equation are shown in FIGS. 7A to 7C, together with absorption spectra of Ca.sub.2ZnN.sub.2 of Comparative Example 1. It is seen that the absorption of CaZn.sub.2N.sub.2 sharply rises. CaZn.sub.2N.sub.2 had a direct band gap of 1.9 eV (calculated value=1.83 eV).

(46) X-ray diffraction patterns of the resulting reaction product are shown in FIG. 6B. The resulting product was Ca.sub.2ZnN.sub.2. As for the lattice parameters of Ca.sub.2ZnN.sub.2, the lattice parameter a was 3.583646(65) which differs by 0.2% from the theoretical lattice parameter a of 3.575 , and the lattice parameter c was 12.663346(26) which differs by 0.4% from the theoretical lattice parameter c of 12.607 .

(47) Absorption spectra of Ca.sub.2ZnN.sub.2 as obtained through diffuse reflectance spectroscopy and calculation using the Kubelka-Munk equation are shown in FIGS. 7A to 7C. Ca.sub.2ZnN.sub.2 had an indirect band gap of 1.6 eV (calculated value=1.65 eV) and a direct band gap of 1.9 eV (calculated value=1.92 eV).

(48) When synthesis was attempted in the same manner as in Comparative Example 1 except for mixing the starting materials in the ratio used in Example 1, CaZn.sub.2N.sub.2 of the present invention was not obtained.

Example 2

Synthesis of Zinc Nitride Compound Represented by CaZn.SUB.2.N.SUB.2

(49) Starting compounds, Ca.sub.3N.sub.2 and Zn.sub.3N.sub.2 mixed in a molar ratio Ca.sub.3N.sub.2:Zn.sub.3N.sub.2 of 1:2, were introduced into a high-pressure cell and subjected to high-pressure synthesis in which a pressure of 5.0 GPa was applied at 1200 C. for 1 hour. The high-pressure synthesis apparatus used is a belt-type high-pressure synthesis apparatus which has a high-pressure cell as a sample holder, whose pressure control range is from 2 to 5.5 GPa, and whose temperature control range is from room temperature to 1600 C.

(50) X-ray diffraction patterns of the resulting high-pressure synthesis product are shown in FIG. 8. About 80 wt % of the product consisted of CaZn.sub.2N.sub.2, and the rest consisted of Zn etc. As for the lattice parameters of CaZn.sub.2N.sub.2, the lattice parameters a and c were respectively 3.46380(11) and 6.00969(30) which differ by 0.3% from the theoretical lattice parameters a and c of 3.454 and 5.990 .

(51) Light emission, in particular photoluminescence, from CaZn.sub.2N.sub.2 obtained as the high-pressure synthesis product was examined through photon excitation induced using a third-harmonic Nd:YAG pulsed laser (wavelength: 355 nm, energy density: up to 7 mJ/cm.sup.2). Red photoluminescence was clearly observed by visual inspection at 10 K. The results are shown in FIG. 9A-B. FIG. 9A shows photoluminescence spectra obtained at 10 K, 100 K, 200 K, and 300 K, and FIG. 9B shows the temperature dependence of the spectral peak position.

(52) (Purification of CaZn.sub.2N.sub.2)

(53) A powder of the obtained high-pressure synthesis product (including CaZn.sub.2N.sub.2 and Zn etc.) and I.sub.2 were put into a glass vessel, which was placed in an argon atmosphere at room temperature for about 5 minutes to convert zinc into zinc iodide. The zinc iodide produced was then dissolved in dimethyl ether, and the solution was removed. CaZn.sub.2N.sub.2 accounted for about 87.3 wt % of the resulting powder, and zinc etc. accounted for about 12.7 wt % of the powder. X-ray diffraction patterns of the purified powder product are shown in FIG. 10. A pellet for use as a pulsed laser deposition target was able to be formed from about 1 g of the purified powder product using a cold isotropic press (CIP) machine.