HIGH FREQUENCY AMPLIFIER APPARATUSES

Abstract

The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying against a cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter can be connected to the gate connections of the two transistors. Each of the gate connections can be connected to ground via at least one voltage-limiting structural element.

Claims

1. A high-frequency amplifier apparatus suitable for generating power for plasma excitation, the apparatus comprising: two Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors each having a drain terminal and a source terminal that is connected to a ground connection point, wherein the LDMOS transistors are embodied alike and are arranged as a package; a circuit board that lies on a metal cooling plate, wherein the package is arranged on the circuit board; a power transformer including a primary winding connected to the drain terminals of the two LDMOS transistors; and a signal transformer including a secondary winding having a first end and a second end, wherein the secondary winding is connected at the first end to a first gate terminal of one of the two LDMOS transistors by one or more first resistive elements, and the secondary winding is connected at the second end to a second gate terminal of the other of the two LDMOS transistors by one or more second resistive elements, wherein each of the first gate terminal and second gate terminal is connected to ground by one or more voltage-limiters, and wherein at least one of the voltage-limiters comprises at least one diode.

2. The apparatus of claim 1, wherein the at least one diode has a cathode and an anode, wherein the cathode is arranged on a gate side and the anode is arranged on a ground side, wherein the gate side includes the first gate terminal and the second gate terminal, and the ground side includes at least one of the ground connections.

3. The apparatus of claim 1, wherein at least one of the voltage-limiters comprises a plurality of diodes connected in series.

4. The apparatus of claim 3, wherein the plurality of diodes comprise at least two diodes of different types.

5. The apparatus of claim 3, wherein at least one of the plurality of diodes has a reverse recovery time that is less than a quarter of a cycle duration of a driving frequency of the two LDMOS transistors.

6. The apparatus of claim 1, wherein the at least one diode is connected to one resistor in series.

7. The apparatus of claim 1, wherein the first gate terminal and the second gate terminal are connected by one or more resistors to a DC voltage source.

8. The apparatus of claim 7, wherein the one or more resistors are connected to a common capacitor.

9. The apparatus of claim 8, wherein the common capacitor is connected to the DC voltage source, and is configured to discharge a gate capacitance.

10. The apparatus of claim 1, wherein the power transformer is arranged on the circuit board and the primary winding is formed in a planar manner on the circuit board.

11. The apparatus of claim 1, wherein the package has terminals that are contacted on the circuit board.

12. A high-frequency amplifier apparatus suitable for generating power for plasma excitation, the apparatus comprising: two Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors each having a drain terminal and a source terminal that is connected to a ground connection point, wherein the LDMOS transistors are embodied alike and are arranged as a package; a circuit board that lies on a cooling plate, wherein the package is arranged on the circuit board; a power transformer including a primary winding connected to the drain terminals of the two LDMOS transistors; and a signal transformer including a secondary winding having a first end and a second end, wherein the secondary winding is connected at the first end to a first gate terminal of one of the two LDMOS transistors by one or more first resistive elements, and the secondary winding is connected at the second end to a second gate terminal of the other of the two LDMOS transistors by one or more second resistive elements, wherein each of the first gate terminal and second gate terminal is connected to ground by one or more voltage-limiters, and wherein the package is arranged on a substrate, in a housing, or both in a housing and on a substrate.

13. The apparatus of claim 12, wherein the housing of the package is arranged in a cut-out in the circuit board.

14. The apparatus of claim 13, wherein the package is mounted on a copper plate, and the copper plate and the package are arranged in the cut-out in the circuit board.

15. The apparatus of claim 14, wherein the cut-out is stepped to be matched to surfaces of the copper plate and the package.

16. The apparatus of claim 12, wherein the substrate includes a copper plate, and the package is mounted on the copper plate.

17. The apparatus of claim 16, wherein the copper plate has a surface on which the package is mounted, wherein the surface is larger than a surface of the package that faces the cooling plate.

18. A high-frequency amplifier apparatus suitable for generating power for plasma excitation, the apparatus comprising: two Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors each having a drain terminal and a source terminal that is connected to a ground connection point, wherein the LDMOS transistors are embodied alike and are arranged as a package; a circuit board that lies on a cooling plate, wherein the package is arranged on the circuit board; a power transformer including a primary winding connected to the drain terminals of the two LDMOS transistors; and a signal transformer including a secondary winding having a first end and a second end, wherein the secondary winding is connected at the first end to a first gate terminal of one of the two LDMOS transistors by one or more first resistive elements, and the secondary winding is connected at the second end to a second gate terminal of the other of the two LDMOS transistors by one or more second resistive elements; and wherein each of the first gate terminal and second gate terminal is connected to ground by one or more voltage-limiters, and wherein the circuit board is a multi-layered circuit board.

19. The apparatus of claim 18, wherein the circuit board has at least one inner layer.

20. The apparatus of claim 18, wherein the circuit board has four total layers.

Description

DESCRIPTION OF DRAWINGS

[0021] FIG. 1 is a schematic circuit diagram that shows a first embodiment of a high-frequency amplifier apparatus, according to an embodiment of the invention.

[0022] FIG. 2 is a schematic circuit diagram that shows a second embodiment of a high-frequency amplifier apparatus, according to an embodiment of the invention.

[0023] FIG. 3 is a graph that shows two different voltage curves to illustrate the effect of an embodiment of the invention on a driving voltage.

DETAILED DESCRIPTION

[0024] FIG. 1 shows a first embodiment of a high-frequency amplifier apparatus 1. The high-frequency amplifier apparatus 1 includes a circuit board 2, on which a package 3 is arranged. The package 3 includes two LDMOS transistors S1, S2, which are embodied alike and are each connected to a ground connection point 5 by their respective source terminals. The LDMOS transistors S1, S2 are each connected by their respective drain terminals to an end of a primary winding 6 of a power transformer 7. The secondary winding 4 of the power transformer 7 is connected to ground 8 and to a high-frequency output 9. The high-frequency amplifier apparatus 1 further includes a signal transformer 10, which includes a primary winding 11 that is connected to a high-frequency input 12. The secondary winding 13 of the signal transformer 10 is connected to the gate terminal 15 of the LDMOS transistor S1 by a resistive element 14, for example, a resistor. The secondary winding 13 is also connected to the gate terminal 17 of the LDMOS transistor S2 by a resistive element 16, for example, a resistor. The resistive elements 14, 16 and the secondary winding 13 are thus connected in series. The signal transformer 10 is also arranged on the circuit board 2, as is the power transformer 7.

[0025] The gate terminal 15 is connected to earth 19 by a voltage-limiter 18, which is formed as a diode in this case. In this case, the cathode of the diode is arranged on the gate side and the anode is arranged on the ground side. Correspondingly, the gate terminal 17 is also connected to earth 21 by a voltage-limiter 20, which is also formed as a diode in this case. This arrangement makes it possible for the control signals of the gate terminals 15, 17 to be voltage-shifted (amplitude-shifted).

[0026] The gate terminals 15, 17 are additionally connected, by means of resistors 22, 23, to a DC voltage source 24, i.e., an operating point voltage source. A driving circuit for generating the driving signals of the LDMOS transistors S1, S2 thus includes, in the embodiment in FIG. 1, the high-frequency input 12, the signal transformer 10, the resistive elements 14, 16, the voltage-limiters 18, 20, the resistors 22, 23 and the DC voltage source 24.

[0027] The circuit board 2 lies flat on a cooling plate 25, which can also be connected to ground 26. For example, the circuit board 2 is connected to the cooling plate 25 by a plurality of ground connections 8, 19, 21, 27. The ground connection 5 is a ground connection point for transferring heat from the LDMOS transistors S1, S2 to the cooling plate 25.

[0028] FIG. 2 shows an alternative embodiment of a high-frequency amplifier apparatus 1, in which the components that correspond to those in FIG. 1 have the same reference signs. One difference of the high-frequency amplifier apparatus 1 from the apparatus 1 is that the voltage-limiter 18 in this case includes two diodes connected in series. The voltage-limiter 20 is designed correspondingly.

[0029] A further difference is that the resistors 22, 23 are connected to a capacitor 30 that is in turn connected to ground 27. A DC voltage source (operating point voltage source) is connected to the terminal 31.

[0030] FIG. 3 shows a plurality of voltage curves over time, as they are applied to the gate terminals 15, 17 as driving signals. The voltage curve 100 is applied to the gate terminal 15 if no voltage-limiter 18 or 18 is available. The voltage curve 101 is applied correspondingly to the gate terminal 17 if no voltage-limiter 20 or 20 is available. The effect of the voltage-limiters 18, 18, 20, 20 is visible in the voltage curves 102, 103, where the negative peak of the voltage curves 102, 103 is limited approximately to the voltage of the voltage-limiter 18, 18, 20, 20, for example, to the voltage drop at one or more diodes. Overall, the voltage of the voltage curves 102, 103, which are applied to the gate terminals 15, 17, is shifted to higher voltage values when a voltage-limiter 18, 18, 20, 20 is used. In other words, the positive peak voltage is increased and the negative peak of the driving signals of the gate terminals 15, 17 is limited to the voltage drop, for example at the diodes, of the voltage-limiter 18, 18, 20, 20. As a result, a lower driving power, i.e. power of the high frequency signal at the high-frequency input 12, is required. A lower gate voltage leads to a reduction in the risk of failure of the LDMOS transistors S1, S2.

OTHER EMBODIMENTS

[0031] It is to be understood that while the invention has been described in conjunction with the detailed description thereof, the foregoing description is intended to illustrate and not limit the scope of the invention, which is defined by the scope of the appended claims. Other aspects, advantages, and modifications are within the scope of the following claims.