Anisotropic conductive film and method of producing the same
11710716 · 2023-07-25
Assignee
Inventors
Cpc classification
B32B37/10
PERFORMING OPERATIONS; TRANSPORTING
H01L2924/00014
ELECTRICITY
C09J4/00
CHEMISTRY; METALLURGY
H05K3/323
ELECTRICITY
Y10T428/24521
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L2924/15788
ELECTRICITY
B32B2305/30
PERFORMING OPERATIONS; TRANSPORTING
H01L2224/294
ELECTRICITY
H01L2224/2939
ELECTRICITY
H01L2924/00014
ELECTRICITY
B32B37/24
PERFORMING OPERATIONS; TRANSPORTING
B32B37/06
PERFORMING OPERATIONS; TRANSPORTING
B32B3/263
PERFORMING OPERATIONS; TRANSPORTING
H01L2224/27005
ELECTRICITY
B32B38/0008
PERFORMING OPERATIONS; TRANSPORTING
H01L2224/29076
ELECTRICITY
H01L2224/2919
ELECTRICITY
H01L2924/15788
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/294
ELECTRICITY
H01L2224/2929
ELECTRICITY
H01L2924/00
ELECTRICITY
H01L2224/2939
ELECTRICITY
International classification
B32B37/06
PERFORMING OPERATIONS; TRANSPORTING
B32B38/00
PERFORMING OPERATIONS; TRANSPORTING
C09J4/00
CHEMISTRY; METALLURGY
H05K3/32
ELECTRICITY
B32B3/26
PERFORMING OPERATIONS; TRANSPORTING
B32B37/00
PERFORMING OPERATIONS; TRANSPORTING
B32B37/10
PERFORMING OPERATIONS; TRANSPORTING
Abstract
An anisotropic conductive film has a three-layer structure in which a first connection layer is sandwiched between a second connection layer and a third connection layer that each are formed mainly of an insulating resin. The first connection layer has a structure in which conductive particles are arranged in a single layer in the plane direction of an insulating resin layer on a side of the second connection layer, and the thickness of the insulating resin layer in central regions between adjacent ones of the conductive particles is smaller than that of the insulating resin layer in regions in proximity to the conductive particles.
Claims
1. An anisotropic conductive film, comprising a first connection layer comprised of an insulating resin and a second connection layer comprised mainly of an insulating resin, the insulating resin of the second connection layer being the same or different from the insulating resin of the first connection layer, and the second connection layer being formed to have direct contact with the first connection layer, wherein conductive particles are arranged in the first connection layer, and wherein a boundary between the first connection layer and the second connection layer has an undulating shape as a result of a thickness t1 of the insulating resin of the first connection layer in central regions between adjacent conductive particles being less than a thickness t2 of the insulating resin of the first connection layer in regions in proximity to the conductive particles, and wherein the thicknesses t1 and t2 satisfy the following relation: 0.1×t2<t1<0.9×t2.
2. The anisotropic conductive film according to claim 1, wherein the insulating resin of the first connection layer that is in proximity to edges of the conductive particles and that is at the boundary between the first connection layer and the second connection layer inclines with respect to a plane direction of the anisotropic conductive film.
3. The anisotropic conductive film according to claim 1, wherein the insulating resin of the first connection layer in proximity to the conductive particles has a convex shape.
4. The anisotropic conductive film according to claim 1, wherein the conductive particles are isolatedly arranged in the first connection layer.
5. The anisotropic conductive film according to claim 1, wherein the conductive particles dig into the second connection layer.
6. The anisotropic conductive film according to claim 2, wherein the insulating resin of the first connection layer in proximity to the conductive particles has a convex shape.
7. The anisotropic conductive film according to claim 2, wherein the conductive particles are isolatedly arranged in the first connection layer.
8. The anisotropic conductive film according to claim 2, wherein the conductive particles dig into the second connection layer.
9. The anisotropic conductive film according to claim 3, wherein the conductive particles are isolatedly arranged in the first connection layer.
10. The anisotropic conductive film according to claim 3, wherein the conductive particles dig into the second connection layer.
11. The anisotropic conductive film according to claim 4, wherein the conductive particles dig into the second connection layer.
12. A connection structure, comprising a first electronic component and a second electronic component connected thereto by anisotropic conductive connection using the anisotropic conductive film according to claim 1.
13. A method of producing a connection structure, comprising connecting a first electronic component to a second electronic component by anisotropic conductive connection using the anisotropic conductive film according to claim 1.
Description
BRIEF DESCRIPTION OF DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
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(8)
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(10)
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(12)
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(14)
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(16)
DESCRIPTION OF EMBODIMENTS
(17) Hereinafter, anisotropic conductive films of the present invention will be described in detail.
(18) «Anisotropic Conductive Film»
(19) As shown in
(20) The central region between adjacent ones of the conductive particles 4 herein means a region that falls within a range of ±L/4 from a midpoint P of a distance L between the adjacent conductive particles. The region in proximity to the conductive particles means a position around a line segment that touches the conductive particles 4 in a thickness direction of the first connection layer 1.
(21) It is preferable that the insulating resin layer thicknesses t1 and t2 further satisfy the following relation. This is because when the thickness t1 is much smaller than the thickness t2, the conductive particles 4 are likely to flow, and the particle capturing efficiency tends to decrease, and when the thickness t1 closely approximates to the thickness t2, the effects of the present invention are unlikely to be obtained.
0.1×t2<t1<0.9×t2
(22) When the absolute thickness of the insulating resin layer thickness t1 is too small, the first connection layer 1 may be unlikely to be formed. Therefore, it is preferably 0.5 μm or more. On the other hand, when the absolute thickness of the insulating resin layer thickness t2 is too large, the insulating resin layer 10 is unlikely to be removed from a connection region during anisotropic conductive connection, and conduction failure may occur. Therefore, it is preferably 6 μm or less.
(23) As shown in
(24) As shown in
(25) Within a range not impairing the effects of the present invention, conductive particles 4′ may be present in the second connection layer 2 as shown by dotted lines in
(26) <First Connection Layer>
(27) As the insulating resin layer 10 constituting such a first connection layer 1, a known insulating resin layer can be appropriately used. For example, a thermal- or photo-radical polymerizable resin layer containing an acrylate compound and a thermal- or photo-radical polymerization initiator or a layer obtained by subjecting the thermal- or photo-radical polymerizable resin layer to thermal- or photo-radical polymerization; or a thermal- or photo-cationic or anionic polymerizable resin layer containing an epoxy compound and a thermal- or photo-cationic or anionic polymerization initiator or a layer obtained by subjecting the thermal- or photo-cationic or anionic polymerizable resin layer to thermal- or photo-cationic or anionic polymerization can be used.
(28) In particular, as the insulating resin layer 10 constituting the first connection layer 1, a thermal-radical polymerizable resin layer containing an acrylate compound and a thermal-radical polymerization initiator may be used. It is preferable that a photo-radical polymerizable resin layer containing an acrylate compound and a photo-radical polymerization initiator be used. In this case, when the photo-radical polymerizable resin layer is irradiated with ultraviolet rays to perform photo-radical polymerization, the first connection layer 1 can be formed. When the photo-radical polymerizable resin layer is irradiated with ultraviolet rays from a side of the conductive particles before formation of the second connection layer 2 to perform photo-radical polymerization, the degree of cure of a region 1X between the conductive particles 4 and a surface 3a of the third connection layer 3 in the first connection layer 1, as shown in
(29) The degree of cure herein represents a value defined as a decrease ratio of a functional group contributing to polymerization (for example, vinyl group). Specifically, when the amount of vinyl group after curing is 20% of that before curing, the degree of cure is 80%. The amount of vinyl group can be measured by analysis of characteristic absorption of vinyl group in infrared absorption spectrum.
(30) The degree of cure defined above in the region 1X is preferably 40 to 80%, and the degree of cure in the region 1Y is preferably 70 to 100%.
(31) It is preferable that the minimum melt viscosity of the first connection layer 1 that is measured by a rheometer be higher than that of each of the second connection layer 2 and the third connection layer 3. Specifically, when a value of [the minimum melt viscosity (mPa.Math.s) of the first connection layer 1]/[the minimum melt viscosity (mPa.Math.s) of the second connection layer 2 or the third connection layer 3] is too low, the particle capturing efficiency decreases, and the probability of occurrence of short circuit tends to increase. When the value is too high, the conduction reliability tends to be reduced. Therefore, the value is preferably 1 to 1,000, and more preferably 4 to 400. As to the respective preferable minimum melt viscosities, when the minimum melt viscosity of the first connection layer 1 is too low, the particle capturing efficiency tends to decrease, and when it is too high, the conduction resistance tends to increase. Therefore, it is preferably 100 to 100,000 mPa.Math.s, and more preferably 500 to 50,000 mPa.Math.s. When the minimum melt viscosity of the second or third connection layer 2, 3 is too low, the resin tends to be squeezed out during formation of a reel, and when it is too high, the conduction resistance tends to increase. Therefore, it is preferably 0.1 to 10,000 mPa.Math.s, and more preferably 1 to 1,000 mPa.Math.s.
(32) <Acrylate Compound>
(33) As the acrylate compound used in the insulating resin layer 10 constituting the first connection layer 1, a conventionally known radically polymerizable acrylate can be used. For example, a monofunctional (meth)acrylate (herein, (meth)acrylate includes acrylate and methacrylate), or a polyfunctional (meth)acrylate such as a bifunctional or more (meth)acrylate can be used. In the present invention, it is preferable that a polyfunctional (meth)acrylate be used for at least a portion of an acrylic monomer to form a thermosetting adhesive.
(34) Examples of the monofunctional (meth)acrylate may include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, i-propyl (meth)acrylate, n-butyl (meth)acrylate, i-butyl (meth)acrylate, tert-butyl (meth) acrylate, 2-methylbutyl (meth) acrylate, n-pentyl (meth)acrylate, n-hexyl (meth)acrylate, n-heptyl (meth)acrylate, 2-methylhexyl (meth)acrylate, 2-ethylhexyl (meth) acrylate, 2-butylhexyl (meth) acrylate, isooctyl (meth)acrylate, isopentyl (meth)acrylate, isononyl (meth)acrylate, isodecyl (meth)acrylate, isobornyl (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxy (meth)acrylate, n-nonyl (meth)acrylate, n-decyl (meth)acrylate, lauryl (meth)acrylate, hexadecyl (meth)acrylate, stearyl (meth)acrylate, and morpholin-4-yl (meth)acrylate. Examples of the bifunctional (meth)acrylate may include bisphenol F-EO-modified di(meth)acrylate, bisphenol A-EO-modified di(meth)acrylate, polypropylene glycol di(meth)acrylate, polyethylene glycol (meth) acrylate, tricyclodecane dimethylol di(meth)acrylate, and dicyclopentadiene (meth)acrylate. Examples of a trifunctional (meth)acrylate may include trimethylolpropane tri(meth)acrylate, trimethylolpropane PO-modified (meth)acrylate, and isocyanuric acid EO-modified tri(meth)acrylate. Examples of a tetrafunctional or more (meth)acrylate may include dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, pentaerythritol tetra(meth)acrylate, and di-trimethylolpropane tetraacrylate. In addition, a polyfunctional urethane (meth)acrylate can also be used. Specific examples thereof may include M1100, M1200, M1210, and M1600 (all available from TOAGOSEI CO., LTD.), and AH-600 and AT-600 (all available from KYOEISHA CHEMICAL CO., LTD.).
(35) When the content of the acrylate compound in the insulating resin layer 10 constituting the first connection layer 1 is too small, a difference of minimum melt viscosity between the first connection layer 1 and the second connection layer 2 is unlikely to be produced. When it is too large, curing shrinkage increases, and the workability tends to be reduced. Therefore, the content is preferably 2 to 70% by mass, and more preferably 10 to 50% by mass.
(36) <Photo-Radical Polymerization Initiator>
(37) A photo-radical polymerization initiator may be appropriately selected from known photo-radical polymerization initiators, and used. Examples thereof may include an acetophenone-based photopolymerization initiator, a benzylketal-based photopolymerization initiator, and a phosphorus-based photopolymerization initiator. Specific examples of the acetophenone-based photopolymerization initiator may include 2-hydroxy-2-cyclohexylacetophenone (IRGACURE 184, available from BASF Japan Ltd.), α-hydroxy-α,α′-dimethylacetophenone (DAROCUR 1173, available from BASF Japan Ltd.), 2,2-dimethoxy-2-phenylacetophenone (IRGACURE 651, available from BASF Japan Ltd.), 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) ketone (DAROCUR 2959, available from BASF Japan Ltd.), and 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-1-propan-1-one (IRGACURE 127, available from BASF Japan Ltd.). Examples of the benzylketal-based photopolymerization initiator may include benzophenone, fluorenone, dibenzosuberone, 4-aminobenzophenone, 4,4′-diaminobenzophenone, 4-hydroxybenzophenone, 4-chlorobenzophenone, and 4,4′-dichlorobenzophenone. 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1 (IRGACURE 369, available from BASF Japan Ltd.) can also be used. Examples of the phosphorus-based photopolymerization initiator may include bis(2,4,6-trimethylbenzoyl)-phenyl phosphine oxide (IRGACURE 819, available from BASF Japan Ltd.) and 2,4,6-trimethylbenzoyl-diphenyl phosphine oxide (DAROCUR TPO, available from BASF Japan Ltd.).
(38) When the amount of the photoradical polymerization initiator to be used is too small relative to 100 parts by mass of acrylate compound, photo-radical polymerization is unlikely to proceed sufficiently. When it is too large, a decrease in rigidity may be caused. Therefore, it is preferably 0.1 to 25 parts by mass, and more preferably 0.5 to 15 parts by mass.
(39) <Thermal-Radical Polymerization Initiator>
(40) Examples of the thermal-radical polymerization initiator may include an organic peroxide and an azo compound. An organic peroxide can be preferably used since nitrogen that becomes bubbles is not generated.
(41) Examples of the organic peroxide may include methyl ethyl ketone peroxide, cyclohexanone peroxide, methyl cyclohexanone peroxide, acetylacetone peroxide, 1,1-bis(tert-butylperoxy)-3,3,5-trimethyl cyclohexane, 1,1-bis(tert-butylperoxy)cyclohexane, 1,1-bis(tert-hexylperoxy)-3,3,5-trimethyl cyclohexane, 1,1-bis(tert-hexylperoxy)cyclohexane, 1,1-bis(tert-butylperoxy)cyclododecane, isobutyl peroxide, lauroyl peroxide, succinic acid peroxide, 3,5,5-trimethyl hexnoyl peroxide, benzoyl peroxide, octanoyl peroxide, stearoyl peroxide, diisopropyl peroxydicarbonate, dinormal propyl peroxydicarbonate, di-2-ethylhexyl peroxydicarbonate, di-2-ethoxyethyl peroxydicarbonate, di-2-methoxybutyl peroxydicarbonate, bis-(4-tert-butylcyclohexyl)peroxydicarbonate, (α,α-bis-neodecanoylperoxy) diisopropylbenzene, cumyl peroxyneodecanoate, octyl peroxyneodecanoate, hexyl peroxyneodecanoate, tert-butyl peroxyneodecanoate, tert-hexyl peroxypivalate, tert-butyl peroxypivalate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, tert-hexyl peroxy-2-ethylhexanoate, tert-butyl peroxy-2-ethylhexanoate, tert-butyl peroxy-3-methylpropionate, tert-butyl peroxylaurate, tert-butyl peroxy-3,5,5-trimethyl hexanoate, tert-hexylperoxy isopropyl monocarbonate, tert-butylperoxy isopropyl carbonate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, tert-butyl peracetate, tert-hexyl perbenzoate, and tert-butyl perbenzoate. An organic peroxide to which a reductant is added may be used as a redox polymerization initiator.
(42) Examples of the azo compound may include 1,1-azobis(cyclohexane-1-carbonitrile), 2,2′-azobis(2-methyl-butyronitrile), 2,2′-azobisbutyronitrile, 2,2′-azobis(2,4-dimethyl-valeronitrile), 2,2′-azobis(2,4-dimethyl-4-methoxynitrile), 2,2′-azobis(2-amidino-propane) hydrochloride, 2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane] hydrochloride, 2,2′-azobis[2-(2-imidazolin-2-yl)propane] hydrochloride, 2,2′-azobis[2-(5-methyl-2-imidazolin-2-yl)propane], 2,2′-azobis[2-methyl-N-(1,1-bis(2-hydroxymethyl)-2-hydroxyethyl)propionamide], 2,2′-azobis[2-methyl-N-(2-hydroxyethyl)propionamide], 2,2′-azobis(2-methyl-propionamide) dihydrate, 4,4′-azobis(4-cyano-valeric acid), 2,2′-azobis(2-hydroxymethylpropiononitrile), dimethyl 2,2′-azobis(2-methylpropionate), and cyano-2-propyl azoformaide.
(43) When the amount of the thermal-radical polymerization initiator to be used is too small, curing is difficult. When it is too large, the product life is reduced. Therefore, the amount is preferably 2 to 60 parts by mass, and more preferably 5 to 40 parts by mass, relative to 100 parts by mass of the acrylate compound.
(44) <Epoxy Compound>
(45) The insulating resin layer 10 constituting the first connection layer 1 may include a thermal- or photo-cationic or anionic polymerizable resin layer containing an epoxy compound and a thermal- or photo-cationic or anionic polymerization initiator or a layer obtained by subjecting the thermal- or photo-cationic or anionic polymerizable resin layer to thermal- or photo-cationic or anionic polymerization.
(46) Preferred examples of the epoxy compound may include a compound or a resin having two or more epoxy groups in its molecule. These may be liquid or solid. Specific examples thereof may include a glycidyl ether obtained by reacting epichlorohydrin with a polyhydric phenol such as bisphenol A, bisphenol F, bisphenol S, hexahydrobisphenol A, tetramethylbisphenol A, diallylbisphenol A, hydroquinone, catechol, resorcin, cresol, tetrabromobisphenol A, trihydroxybiphenyl, benzophenone, bisresorcinol, bisphenol hexafluoroacetone, tetramethylbisphenol A, tetramethylbisphenol F, tris(hydroxyphenyl)methane, bixylenol, phenol novolak, and cresol novolak, and a polyglycidyl ether obtained by reacting epichlorohydrin with an aliphatic polyhydric alcohol such as glycerol, neopentyl glycol, ethylene glycol, propylene glycol, butylene glycol, hexylene glycol, polyethylene glycol, and polypropylene glycol; a glycidyl ether ester obtained by reacting epichlorohydrin with a hydroxycarboxylic acid such as p-oxybenzoic acid and β-oxynaphthoic acid, and a polyglycidyl ester obtained from polycarboxylic acid such as phthalic acid, methylphthalic acid, isophthalic acid, terephthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, endomethylene tetrahydrophthalic acid, endomethylene hexahydrophthalic acid, trimellitic acid, and polymerized fatty acid; a glycidylaminoglycidyl ether obtained from aminophenol and aminoalkylphenol; a glycidylaminoglycidyl ester obtained from aminobenzoic acid; glycidylamine obtained from aniline, toluidine, tribromoaniline, xylylenediamine, diaminocyclohexane, bisaminomethylcyclohexane, 4,4′-diaminodiphenylmethane, and 4,4′-diaminodiphenyl sulfone; and a known epoxy resin such as epoxidized polyolefin. An alicyclic epoxy compound such as 3,4-epoxycyclohexenylmethyl-3′,4′-epoxycyclohexene carboxylate can also be used.
(47) <Thermal Cationic Polymerization Initiator>
(48) As the thermal cationic polymerization initiator, a known thermal cationic polymerization initiator for an epoxy compound can be used. For example, the thermal cationic polymerization initiator generates an acid in which a cationically polymerizable compound may be cationically polymerized by heat. A known iodonium salt, sulfonium salt, phosphonium salt, or ferrocene salt can be used. An aromatic sulfonium salt that exhibits favorable latency with respect to temperature can be preferably used. Preferred examples of the thermal cationic polymerization initiator may include diphenyliodonium hexafluoroantimonate, diphenyliodonium hexafluorophosphate, diphenyliodonium hexafluoroborate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium hexafluorophosphate, and triphenylsulfonium hexafluoroborate. Specific examples thereof may include SP-150, SP-170, CP-66, and CP-77 available from ADEKA CORPORATION; CI-2855 and CI-2639 available from Nippon Soda Co., Ltd.; SAN-AID SI-60 and SI-80 available from SANSHIN CHEMICAL INDUSTRY CO., LTD.; and CYRACURE-UVI-6990 and UVI-6974 available from Union Carbide Corporation.
(49) When the amount of the thermal cationic polymerization initiator to be added is too small, thermal cationic polymerization is unlikely to proceed sufficiently. When it is too large, a decrease in rigidity may be caused. Therefore, the amount is preferably 0.1 to 25 parts by mass, and more preferably 0.5 to 15 parts by mass, relative to 100 parts by mass of the epoxy compound.
(50) <Thermal Anionic Polymerization Initiator>
(51) As the thermal anionic polymerization initiator, a known thermal anionic polymerization initiator for an epoxy compound can be used. For example, the thermal anionic polymerization initiator generates a base in which an anionically polymerizable compound may be anionically polymerized by heat. A known aliphatic amine compound, aromatic amine compound, secondary or tertiary amine compound, imidazole compound, polymercaptan compound, boron trifluoride-amine complex, dicyandiamide, or organic acid hydrazide can be used. An encapsulated imidazole compound that exhibits favorable latency with respect to temperature can be preferably used. Specific examples thereof may include NOVACURE HX3941HP available from Asahi Kasei E-materials Corporation.
(52) When the amount of the thermal anionic polymerization initiator to be added is too small, curing tends to be difficult. When it is too large, the product life tends to be reduced. Therefore, the amount is preferably 2 to 60 parts by mass, and more preferably 5 to 40 parts by mass, relative to 100 parts by mass of the epoxy compound.
(53) <Photo-Cationic Polymerization Initiator and Photo-Anionic Polymerization Initiator>
(54) As the photo-cationic polymerization initiator or the photo-anionic polymerization initiator for the epoxy compound, a known polymerization initiator can appropriately be used.
(55) <Conductive Particles>
(56) The conductive particles 4 constituting the first connection layer 1 can be appropriately selected from particles used in a conventionally known anisotropic conductive film, and used. Examples thereof may include particles of metal such as nickel, cobalt, silver, copper, gold, and palladium, and metal-coated resin particles. Two or more kinds thereof may be used in combination.
(57) When the average particle diameter of the conductive particles 4 is too small, the particles cannot correspond to various heights of wirings, and conduction resistance tends to increase. When it is too large, short circuit tends to occur. Therefore, it is preferably 1 to 10 μm, and more preferably 2 to 6 μm. The average particle diameter can be measured by a general particle size distribution measurement device.
(58) When the amount of such conductive particles 4 in the first connection layer 1 is too small, the particle capturing efficiency decreases, and anisotropic conductive connection is difficult. When it is too large, short circuit may be caused. Therefore, it is preferably 50 to 40,000, and more preferably 200 to 20,000 per square millimeter.
(59) <Other Components in First Connection Layer>
(60) In the first connection layer 1, if necessary, a film-forming resin such as a phenoxy resin, an epoxy resin, an unsaturated polyester resin, a saturated polyester resin, a urethane resin, a butadiene resin, a polyimide resin, a polyamide resin, and a polyolefin resin can be used in combination.
(61) When the insulating resin layer 10 constituting the first connection layer 1 is a layer obtained by photo-radical polymerization of a photo-radical polymerizable resin layer containing an acrylate compound and a photo-radical polymerization initiator, it is preferable that the insulating resin layer 10 further contain an epoxy compound and a thermal cationic polymerization initiator. In this case, it is preferable that the second connection layer 2 and the third connection layer 3 be also a thermal-cationic polymerizable resin layer containing the epoxy compound and the thermal cationic polymerization initiator, as described below. Thus, the interlayer peel strength can be improved.
(62) In the first connection layer 1, it is preferable that the conductive particles 4 dig into the second connection layer 2 (i.e., the conductive particles 4 be exposed on the surface of the first connection layer 1), as shown in
(63) The first connection layer 1 can be formed by disposing the conductive particles 4 within the openings of the die with the openings, placing the insulating resin layer 10 that forms the first connection layer 1 formed on a release film so as to be opposed to a surface of the die with the openings 21, and applying pressure while heating if necessary, so that the insulating resin does not enter into a corner of bottom of the openings.
(64) <Second Connection Layer and Third Connection Layer>
(65) The second connection layer 2 and the third connection layer 3 are both formed mainly of an insulating resin. The insulating resin may be appropriately selected from known insulating resins, and used. They can be formed from a material that is the same as the material for the insulating resin layer 10 in the first connection layer 1.
(66) The second connection layer 2 is disposed on a side of the conductive particles 4 in the first connection layer 1, and is usually a layer disposed on a side of a terminal that requires high accuracy of position alignment, such as a bump of an IC chip. On the other hand, the third connection layer 3 is usually disposed on a side of a terminal that does not require relatively high accuracy of alignment, such as a solid electrode of a glass substrate.
(67) When the thickness of the second connection layer 2 is too small, the filled resin is insufficient, and therefore the conduction failure may occur. When it is too large, the resin is squeezed out during compression bonding, and a compression-bonding device may be contaminated. Therefore, it is preferably 5 to 20 μm, and more preferably 8 to 15 μm. When the thickness of the third connection layer 3 is too small, the third connection layer 3 may be insufficiently adhered to a second electronic component during temporary application. When it is too large, the conduction resistance tends to increase. Therefore, it is preferably 0.5 to 6 μm, and more preferably 1 to 5 μm.
(68) <Method of Producing Anisotropic Conductive Film»
(69) Next, a method of producing the anisotropic conductive film of the present invention will be described as one example. This production method includes the following steps (A) to (D). Hereinafter, each step will be described.
(70) <Step (A)>
(71) As shown in
(72) The transfer die 20 has openings that are formed, for example, from an inorganic material such as various ceramics, glass, and metal including stainless steel, or an organic material such as various resins, by a known opening-forming method such as a photolithography method. Such a transfer die 20 may have a shape of a plate, a roller, or the like.
(73) The openings 21 of the transfer die 20 house the conductive particles 4 thereinside. The openings 21 may have a shape of column, polygonal pillar such as square pillar, or pyramid such as square pyramid.
(74) It is preferable that the alignment of the openings 21 be regular alignment such as a lattice pattern and a zigzag pattern.
(75) The diameter and the depth of the openings 21 of the transfer die 20 can be measured by a laser microscope.
(76) A method for housing the conductive particles 4 in the openings 21 of the transfer die 20 is not particularly limited, and a known procedure can be utilized. For example, a dried powder of conductive particles or a dispersion liquid in which the powder is dispersed in a solvent is sprayed or applied to an opening-forming face of the transfer die 20, and the surface of the opening-forming face may be wiped with a brush, a blade, or the like.
(77) The ratio of the average particle diameter of the conductive particles 4 to the depth of the openings 21 (the average particle diameter of the conductive particles/the depth of the openings) is preferably 0.4 to 3.0, and more preferably 0.5 to 1.5 in terms of balance between improvement of transfer and conductive particle retentivity.
(78) The ratio of the average particle diameter of the conductive particles 4 to the diameter of the openings 21 (the average particle diameter of the conductive particles/the diameter of the opening) is preferably 1.1 to 2.0, and more preferably 1.3 to 1.8 in terms of balance between easy housing of the conductive particles, easy pressing of the insulating resin, and the like.
(79) When the bottom diameter of the openings 21 is smaller than the opening diameter of the openings 21, it is preferable that the bottom diameter be 1.1 times or more and less than 2 times the diameter of the conductive particles and the opening diameter be 1.3 times or more and less than 3 times the diameter of the conductive particles.
(80) <Step (B)>
(81) As shown in
(82) <Step (C)>
(83) As shown in
(84) <Step (D)>
(85) Subsequently, after the release film 22 is removed, the third connection layer 3 formed mainly of an insulating resin is formed on a surface of the first connection layer 1 on a side opposite to the second connection layer 2. Thus, the anisotropic conductive film 100 shown in
(86) It is preferable that the first connection layer 1 be irradiated with ultraviolet rays UV from the side of the conductive particles 4 as shown in
(87) «Method of Producing Anisotropic Conductive Film»
(88) An example of another method of producing the anisotropic conductive film of the present invention will be described. This method is an aspect in which the third connection layer 3 is used instead of the release film 22 and includes the following steps (a) to (c). Hereinafter, each step will be described.
(89) <Step (a)>
(90) As shown in
(91) <Step (b)>
(92) As shown in
(93) <Step (c)>
(94) The second connection layer 2 formed mainly of an insulating resin is formed on a surface of the first connection layer 1 on a side of the conductive particles 4. Thus, the anisotropic conductive film 100 shown in
(95) It is preferable that the first connection layer 1 be irradiated with ultraviolet rays UV from the side of the conductive particles 4 as shown in
(96) In the anisotropic conductive film shown in
(97) «Application of Anisotropic Conductive Film»
(98) The anisotropic conductive film obtained above can be preferably applied to anisotropic conductive connection by heat or light between a first electronic component such as an IC chip and an IC module and a second electronic component such as a flexible substrate and a glass substrate. The resultant connection structure is also a part of the present invention. In this case, it is preferable that the anisotropic conductive film be temporarily applied to the second electronic component from the third connection layer side, the first electronic component such as an IC chip be mounted on the anisotropic conductive film temporarily applied, and the anisotropic conductive film be subjected to thermocompression-bonding from the first electronic component side since the connection reliability is enhanced. Further, light curing can also be used for connection.
EXAMPLES
(99) Hereinafter, the present invention will be described specifically by way of Examples.
Examples 1 to 10
(100) An acrylate, a photo-radical polymerization initiator, and the like were mixed in accordance with a composition described in Table 1 or 2 to prepare a mixed liquid so that the solid content in ethyl acetate or toluene was 50% by mass. This mixed liquid was applied to a polyethylene terephthalate film (PET film) with a thickness of 50 μm so as to have a dried thickness of 5 μm, and dried in an oven at 80° C. for 5 minutes, to form a photoradically polymerizable insulating resin layer as a first connection layer.
(101) A stainless steel transfer die with columnar openings that had a diameter of 5.5 μm and a depth of 4.5 μm and were provided at longitudinal and horizontal pitches of 9 μm was prepared. Each opening housed each of conductive particles with an average particle diameter of 4 μm (Ni/Au plated resin particles, AUL 704, available from SEKISUI CHEMICAL CO., LTD.). An insulating resin layer for a first connection layer was placed so as to be opposite to an opening-forming face of the transfer die. The conductive particles were pressed into the insulating resin layer by applying pressure under conditions of 60° C. and 0.5 MPa from a side of a release film. Thus, the insulating resin layer was formed so that the thickness of the insulating resin layer in central regions between adjacent ones of the conductive particles was smaller than the thickness of the insulating resin layer in regions in proximity to the conductive particles.
(102) Subsequently, the photo-radical polymerizable insulating resin layer was irradiated with ultraviolet rays with a wavelength of 365 nm and an integrated light quantity of 4,000 mL/cm.sup.2 from the conductive particle side. Thus, the first connection layer, on the surface of which the conductive particles were fixed, was formed.
(103) A thermosetting resin, a latent curing agent, and the like were mixed in ethyl acetate or toluene to prepare a mixed liquid so that the solid content was 50% by mass. This mixed liquid was applied to a PET film with a thickness of 50 μm so as to have a dried thickness of 12 μm, and dried in an oven at 80° C. for 5 minutes, to form a second connection layer. A third connection layer with a dried thickness of 3 μm was formed by the same operation.
(104) The second connection layer was laminated on the obtained first connection layer under conditions of 60° C. and 0.5 MPa so that the conductive particles were located inside, and the third connection layer was similarly laminated on the opposite surface to obtain an anisotropic conductive film.
(105) In Examples 7 to 10, an anisotropic conductive film was formed so that the thickness of the first connection layer between the conductive particles was substantially zero. Specifically, an anisotropic conductive film was formed in the same manner as in Example 1 except that an insulating resin layer for a first connection layer was placed so as to be opposed, and pressurized from the release film side under conditions of 60° C. and 0.5 MPa, followed by pressurization again under conditions of 60° C. and 1.0 MPa.
Comparative Example 1
(106) A photo-radical polymerizable insulating resin layer that was a precursor layer of a first connection layer, similarly to Example 1, was formed in accordance with a composition described in Table 1.
(107) A stainless steel transfer die with columnar openings that had a diameter of 5.5 μm and a depth of 4.5 μm and were provided at longitudinal and horizontal pitches of 9 μm was prepared. Each opening housed each of conductive particles with an average particle diameter of 4 μm (Ni/Au plated resin particles, AUL 704, available from SEKISUI CHEMICAL CO., LTD.). An insulating resin layer for a first connection layer was placed so as to be opposed to an opening-forming face of the transfer die. The conductive particles were transferred to a surface of the insulating resin layer by applying pressure under relatively weak conditions of 40° C. and 0.1 MPa from the release film side. This film having transferred conductive particles was taken out, and the conductive particles were completely pressed into the insulating resin layer so that the surface of the resin layer was flat.
(108) Subsequently, the photo-radical polymerizable insulating resin layer in which the conductive particles were embedded was irradiated with ultraviolet rays with a wavelength of 365 nm and an integrated light quantity of 4,000 mL/cm.sup.2. Thus, a flat first connection layer was formed.
(109) A second connection layer with a thickness of 12 μm and a third connection layer with a thickness of 3 μm that were formed in the same manner as in Example 1 were laminated on the first connection layer to form an anisotropic conductive film.
Comparative Example 2
(110) From a mixture in which conductive particles that were the same as in Example 1 were uniformly dispersed in a resin composition for a first connection layer of Table 1 so that the number was 20,000 per square millimeter, a conductive particle-containing resin film with a thickness of 6 μm was formed. To this film, a second connection layer with a thickness of 12 μm formed in the same manner as in Example 1 was bonded under conditions of 60° C. and 0.5 MPa, to form an anisotropic conductive film having a two-layer structure.
(111) <Evaluation>
(112) A case where a uniform planar arrangement between the conductive particles in the obtained anisotropic conductive films is formed is evaluated as applicable (Yes), and another case is evaluated as not applicable (No). A case where the thickness of the insulating resin layer in regions in proximity to the conductive particles is larger than that of the insulating resin layer in central regions between the conductive particles (also including a thickness of 0) is evaluated as an increase in the thickness of the insulating resin layer in regions in proximity to the conductive particles (Yes), and another case is evaluated as no increase (No). The results are shown in Tables 1 and 2. The number of layers constituting each of the anisotropic conductive films is also shown.
(113) An IC chip with a size of 0.5 mm×1.8 mm×20.0 mm (bump size: 30 μm×85 μm, bump height: 15 μm, bump pitch: 50 μm) was mounted on a glass circuit board (1737F) with a size of 0.5 mm×50 mm×30 mm available from Corning Incorporated using each of the obtained anisotropic conductive films under conditions of 180° C., 80 MPa, and 5 seconds to obtain a connection structure sample. When the cross section of a connection part of the connection structure sample was observed by an electron microscope, the insulating resin layer around the conductive particles was confirmed, as shown in
(114) As described below, “minimum melt viscosity,” “particle capturing efficiency,” “conduction reliability,” and “insulating properties” in the obtained connection structure sample were evaluated on a test. The results are shown in Tables 1 and 2.
(115) “Minimum Melt Viscosity”
(116) The minimum melt viscosity of each of the first connection layer and the second connection layer that constituted the connection structure sample was measured by a rotational rheometer (manufactured by TA Instruments) under conditions of a temperature increasing rate of 10° C./min, a constant measurement pressure of 5 g, and a measurement plate diameter of 8 mm.
(117) “Particle Capturing Efficiency”
(118) The ratio of the “amount of particles actually captured on bumps of the connection structure sample after heating and pressurization (after actual mounting)” to the “theoretical amount of particles existing on bumps of the connection structure sample before heating and pressurization” was determined in accordance with the following mathematical expression. In practical terms, the ratio is desirably 50% or more.
Particle capturing efficiency (%)={[number of particles on bumps after heating and pressurization]/[number of particles on bumps before heating and pressurization]}×100
“Conduction Reliability”
(119) The connection structure sample was left under an environment of a high temperature of 85° C. and a high humidity of 85% RH. The conduction resistances at the initial stage and after 500 hours were measured. In practical terms, the resistance is desirably 10Ω or less even after 500 hours.
(120) “Insulating Properties”
(121) The rate of occurrence of a short circuit in a comb-teeth TEG pattern with a space of 7.5 μm was determined. In practical terms, the ratio is desirably 100 ppm or less.
(122) TABLE-US-00001 TABLE 1 Example 1 2 3 4 Application of Uniform Planar Arrangement of Conductive Particles Yes Yes Yes Yes Increase in Thickness of Insulating Resin Layer in Regions in proximity to Conductive Particles Yes Yes Yes Yes Number of Layers Constituting Anisotropic Conductive Film 3 3 3 3 First Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 60 Layer Chemical Co., Ltd. Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. 40 40 Photo-Radical IRGACURE 369 BASF Japan Ltd. 2 2 Polymerization Initiator (Parts By Mass) Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Minimum Melt Viscosity of First Connection Layer [mPa .Math. s] After UV Irradiation 20000 20000 20000 20000 for Examples 1 and 2 Second Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 60 Layer Chemical Co., Ltd. Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. 40 40 Organic Peroxide (Parts By Mass) Perhexyl Z NOF Corporation 2 2 Minimum Melt Viscosity of Second Connection Layer [mPa .Math. s] 500 500 500 500 Third Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 60 Layer Chemical Co., Ltd.. Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Acrylate (Parts By Mass) EB606 Daicel-Allnex Ltd.. 40 40 Organic Peroxide (Parts By Mass) Perhexyl Z NOF Corporation 2 2 Minimum Melt Viscosity of Third Connection Layer [mPa .Math. s] 500 500 500 500 [Minimum Melt Viscosity of First Connection Layer]/ 40 40 40 40 [Minimum Melt Viscosity of Second or Third Connection Layer] Conduction Resistance Value (Ω) Initial 0.2 0.2 0.2 0.2 85° C., 85% RH, 500 hr 5.0 6.0 8.0 7.6 Insulating Properties (Rate of Occurrence of Short [ppm] 30 30 30 30 Circuit) Particle Capturing Efficiency [%] 82.40 79.20 80.40 83.10 Example Comparative Example 5 6 1 2 Application of Uniform Planar Arrangement of Conductive Particles Yes Yes Yes No Increase in Thickness of Insulating Resin Layer in Regions in proximity to Conductive Particles Yes Yes No No Number of Layers Constituting Anisotropic Conductive Film 3 3 3 2 First Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 80 40 60 60 Layer Chemical Co., Ltd. Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. 20 60 40 40 Photo-Radical IRGACURE 369 BASF Japan Ltd. 2 2 2 2 Polymerization Initiator (Parts By Mass) Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical Corporation Thermal Cationic SI-60L Sanshin Chemical Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Minimum Melt Viscosity of First Connection Layer [mPa .Math. s] After UV Irradiation 2000 100000 20000 20000 for Examples 1 and 2 Second Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 80 60 60 Layer Chemical Co., Ltd. Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 20 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. Organic Peroxide (Parts By Mass) Perhexyl Z NOF Corporation Minimum Melt Viscosity of Second Connection Layer [mPa .Math. s] 500 250 500 500 Third Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 Layer Chemical Co., Ltd.. Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 40 Corporation Thermal Catbnic SI-60L Sanshin Chemical 2 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Acrylate (Parts By Mass) EB606 Daicel-Allnex Ltd.. Organic Peroxide (Parts By Mass) Perhexyl Z NOF Corporation Minimum Melt Viscosity of Third Connection Layer [mPa .Math. s] 500 250 500 — [Minimum Melt Viscosity of First Connection Layer]/ 4 400 40 40 [Minimum Melt Viscosity of Second or Third Connection Layer] Conduction Resistance Value (Ω) Initial 0.2 0.2 2.0 0.2 85° C., 85% RH, 500 hr 5.0 8.0 50.0 5.0 Insulating Properties (Rate of Occurrence of Short [ppm] 100 10 30 3000 Circuit) Particle Capturing Efficiency [%] 43.60 84.95 63.70 25
(123) TABLE-US-00002 TABLE 2 Example 7 8 9 10 Application of Uniform Planar Arrangement of Conductive Particles Yes Yes Yes Yes Increase in Thickness of Insulating Resin Layer in Regions in proximity to Conductive Particles Yes Yes Yes Yes Number of Layers Constituting Anisotropic Conductive Film 3 3 3 3 First Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 60 Layer Chemical Co., Ltd. Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. 40 40 Photo-Radical IRGACURE 369 BASF Japan Ltd. 2 2 Polymerization Initiator (Parts By Mass) Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Minimum Melt Viscosity of First Connection Layer [mPa .Math. s] 20000 20000 20000 20000 Second Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 60 Layer Chemical Co., Ltd. Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. 40 40 Organic Peroxide (Parts By Mass) Perhexyl Z NOF Corporation 2 2 Minimum Melt Viscosity of Second Connection Layer [mPa .Math. s] 500 500 500 500 Third Connection Phenoxy Resin (Parts By Mass) YP-50 Nippon Steel & Sumikin 60 60 60 60 Layer Chemical Co., Ltd. Epoxy Resin (Parts By Mass) jER828 Mitsubishi Chemical 40 40 Corporation Thermal Cationic SI-60L Sanshin Chemical 2 2 Polymerization Initiator Industry Co., Ltd. (Parts By Mass) Acrylate (Parts By Mass) EB600 Daicel-Allnex Ltd. 40 40 Organic Peroxide (Parts By Mass) Perhexyl Z NOF Corporation 2 2 Minimum Melt Viscosity of Third Connection Layer [mPa .Math. s] 500 500 500 500 [Minimum Melt Viscosity of First Connection Layer]/ 40 40 40 40 [Minimum Melt Viscosity of Second or Third Connection Layer] Conduction Resistance Value Initial 0.2 0.2 0.2 0.2 85° C., 85% RH, 500 hr 5 5 8 8 Insulating Properties (Rate of Occurrence of Short [ppm] 30 30 30 30 Circuit) Particle Capturing Efficiency [%] 85 82 83 87
(124) As seen from Table 1, the anisotropic conductive films of Examples 1 to 6 exhibit preferable results in practical terms in all evaluation items of particle capturing efficiency, conduction reliability, and insulating properties. As seen from the results in Examples 1 to 4, when the first, second, and third connection layers are all the same curing system, the layers are reacted with one another. Therefore the pressing property of the conductive particles slightly decreases and the conduction resistance tends to increase. Further, when the first connection layer is a cationic polymerization system, the thermal resistance is improved as compared with a radical polymerization system. Therefore the pressing property of the conductive particles slightly decreases and the conduction resistance tends to increase.
(125) On the other hand, in the first connection layer of the anisotropic conductive film of Comparative Example 1, the thickness of the insulating resin layer in central regions between adjacent ones of the conductive particles is not smaller than that of the insulating resin layer in regions in proximity to the conductive particles. Therefore, the conduction reliability is largely reduced. In the anisotropic conductive film of Comparative Example 2 that has a conventional two-layer structure, the particle capturing efficiency largely decreases, and the insulating properties has a problem.
(126) As seen from Table 2, the anisotropic conductive films of Examples 7 to 10 have a thickness in central regions between the conductive particles of zero. Therefore, the independence of the conductive particles is enhanced, and the anisotropic conductive films exhibit preferable results in practical terms in all evaluation items of particle capturing efficiency, conduction reliability, and insulating properties.
INDUSTRIAL APPLICABILITY
(127) In the anisotropic conductive film of the present invention that has a three-layer structure in which the first connection layer is sandwiched between the second and third connection layers that each are insulative, the first connection layer has a structure in which conductive particles are arranged in a single layer in a plane direction of an insulating resin layer on a side of the second connection layer, and a structure in which the thickness of the insulating resin layer at a center between adjacent ones of the conductive particles is smaller than that of the insulating resin layer in regions in proximity to the conductive particles. For this reason, the anisotropic conductive film having the conductive particles arranged in a single layer is allowed to achieve favorable connection reliability, favorable insulating properties, and favorable particle capturing efficiency. Therefore, the anisotropic conductive film is useful in anisotropic conductive connection of an electronic component such as an IC chip to a circuit board.
REFERENCE SIGNS LIST
(128) 1 first connection layer 1X region where the degree of cure in the first connection layer is low 1Y region where the degree of cure in the first connection layer is high 1d coating layer 2 second connection layer 3 third connection layer 3a surface of third connection layer 4 conductive particle 10 insulating resin layer 20 transfer die 21 opening 22 release film 100 anisotropic conductive film L distance between conductive particles P midpoint of distance between conductive particles t1, t2 insulating resin layer thickness