Stacked semiconductor system having interposer of half-etched and molded sheet metal

Abstract

A semiconductor system (900) has a flat interposer (510) with a first surface (401a) in a first plane, a second surface (401b) in a parallel second plane, and a uniform first height (401) between the surfaces; the interposer is patterned in metallic zones separated by gaps (412, 415), the zones include metal of the first height and metal of a second height (402) smaller than the first height; an insulating material fills the gaps and the zone differences between the first and the second heights. Semiconductor chips of a first (610) and a second (611) set have first terminals attached to metallic zones of the first interposer surface while the chips of the second set have their second terminals facing away from the interposer. A first leadframe (700) is attached to the second terminals of the second set chips, and a second leadframe (800) is attached to respective metallic zones of the second interposer surface.

Claims

1. A semiconductor package comprising: a sheet having a first surface in a first plane, a second surface in a second plane parallel to the first plane, and a first height between the first surface and the second surface; a semiconductor die attached to the first surface; a portion of a leadframe attached to the second surface; the sheet patterned in metallic zones separated by gaps, the zones including at least a first metallic zone having a metal of the first height across the entire first metallic zone, and at least a second metallic zone having the metal of a second height and a third height, the third height being smaller than the second height, and the second height equal to the first height; and an insulating material filling the gaps and an area between the first and the second heights, and covering portions of the semiconductor die and the leadframe.

2. The semiconductor package of claim 1, wherein the metal is selected from the group consisting of copper, aluminum, and iron-nickel alloy.

3. The semiconductor package of claim 1, wherein the insulating material is a molding compound.

4. The semiconductor package of claim 1, wherein the first height is between about 100 and 300 m.

5. The semiconductor package of claim 1, wherein the sheet is a generally flat sheet.

6. The semiconductor package of claim 1, wherein the sheet is an interposer.

7. The semiconductor package of claim 1 further comprising a passive component attached to the sheet.

8. The semiconductor package of claim 1, wherein the passive component is an inductor or a capacitor.

9. A semiconductor package comprising: a sheet having a first surface in a first plane, a second surface in a second plane parallel to the first plane, and a uniform first height between the first surface and the second surface; a first semiconductor die attached to the first surface via a first set of terminals; a second semiconductor die attached to the first surface via second set of terminals, wherein a third set of terminals of the second semiconductor die face away from the sheet; a portion of a first leadframe attached to the third set of terminals; the sheet patterned in metallic zones separated by gaps, the zones including at least a first metallic zone having a metal of the uniform first height across the entire first metallic zone, and at least a second metallic zone having the metal of a first height and a second height, the second height being smaller than the first height, and the uniform first height equal to the first height; and a portion of a second leadframe attached to the metallic zones.

10. The semiconductor package of claim 9 further comprising an insulating material filling the gaps and an area between the first and the second heights, and covering portions of the first semiconductor die, the second first semiconductor die, the first lead frame, and the second leadframe.

11. The semiconductor package of claim 9 further comprising a passive component attached to the sheet.

12. The semiconductor package of claim 9, wherein the sheet is in between the first leadframe and the second leadframe from a cross-sectional view of the semiconductor package.

13. The semiconductor package of claim 9, wherein first semiconductor die includes solder balls suitable for flip-chip attachment to the sheet.

14. The semiconductor package of claim 9, wherein the first leadframe includes tabs bent at an angle with respect to a plane along the length of the first lead frame, that are electrically connected to the metallic zones.

15. A semiconductor package comprising: an interposer including: a plurality of conductive zones, including at least a first zone having a metal of a first height, and at least a second zone having the metal of a second height and a third height, the third height being smaller than the second height and the second height equal to the first height; and a plurality of insulating zones defined in between the plurality of conductive zones, and in an area between the first and the second heights; a semiconductor die attached to the interposer; and a portion of a leadframe attached to the interposer.

16. The semiconductor package of claim 15, wherein the plurality of insulating zones includes a molding compound.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows a top view of a number of exemplary interposer units, which have been formed in a portion of a sheet metal strip.

(2) FIG. 2 illustrates a top view of a discrete unit of the exemplary interposer strip shown in FIG. 1.

(3) FIG. 3 depicts a bottom view of the discrete unit of exemplary interposer shown in FIG. 2.

(4) FIGS. 4 to 10 show certain steps in the fabrication flow of an exemplary interposer and stacked semiconductor system.

(5) FIG. 4 is a cross section of a portion of an interposer, after a flat sheet metal has been processed through the steps of patterning and partial thinning.

(6) FIG. 5 shows a top view of an exemplary interposer unit after the steps of patterning the metal zones and filling the gaps between the zones with insulating material.

(7) FIG. 6 illustrates a perspective view of the interposer unit of FIG. 5 after attaching an up- and a down-field-effect transistor and flip-attaching an integrated circuit.

(8) FIG. 7 shows a top view of an exemplary first leadframe suitable as top leadframe for stacking a semiconductor system.

(9) FIG. 8 shows a perspective view of an exemplary second leadframe suitable as bottom leadframe for stacking a semiconductor system.

(10) FIG. 9A illustrates a perspective view of the routing substrate integrating the exemplary semiconductor chips, passive components, the interposer and a top and a bottom leadframe.

(11) FIG. 9B depicts a cross section of the routing substrate of FIG. 9A integrating semiconductor chips, some passive components, the interposer and a top and a bottom leadframe.

(12) FIG. 10 shows a cross section through the exemplary packaged stacked semiconductor system using the routing substrate with the interposer of FIGS. 9A and 9B.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(13) FIG. 1 shows, in top view, an embodiment of the invention. FIG. 1 displays a portion of a metal strip generally designated 100, which includes a plurality of structures 110 herein referred to as interposers. As FIG. 1 indicates, strip 100 has a first surface 101 in a first plane. Strip 100 is a flat sheet; consequently, it has a second surface (not shown in FIG. 1) in a second plane parallel to the first plane. Between the first surface 101 and the second surface, the flat sheet of strip 100 has a uniform first thickness.

(14) The flat sheet of strip 100 is electrically conductive; preferably, the flat sheet is a metal selected from a group including copper, copper alloys, aluminum, iron-nickel alloys, and Kovar. As a flat sheet, strip 100 has a thickness, which is herein referred to as first height. When the sheet is made of copper, the preferred first height of the metal sheet is between 100 and 300 m.

(15) The portion of strip 100 shown in FIG. 1 illustrates that the plurality of interposers of strip 100 includes identical and repetitive interposers 110. One of these interposers 110 is enlarged in FIG. 2 in top view and in FIG. 3 in bottom view. As FIG. 2 indicates, the sheet of interposer 110 is patterned in metallic zones 111 separated by gaps 112. The gaps are filled with electrically insulating material. Preferably, the insulating material is a molding compound.

(16) A comparison of the top view of interposer 110, shown in FIG. 2, with the bottom view of the same interposer, shown in FIG. 3, indicates that the distribution of metallic zones is different on the first surface of the interposer and the second surface. As the bottom view of FIG. 3 shows, not only the gaps but considerably larger areas are filled with insulating material.

(17) As the cross section of an interposer portion in FIG. 4 explains, viewing the second surface of the interposer from the bottom in the direction of arrow 451 reveals much larger areas filled with insulating material compared to viewing the first surface of the interposer from the top in the direction of arrow 450, because portions of certain metallic zones have been half-etched in order to thin these zone portions so that first height 401 is reduced to second height 402. Second height 402 is smaller than first height 401. The thinned portions of the zone are then filled with insulating material 115, preferably molding compound. Consequently, the bottom view 451 of the interposer reveals larger insulating areas and reduced metallic areas compared to top view 450.

(18) The interposer displayed in FIGS. 2 and 3 is a flat, sheet-like supporter for semiconductor devices with a network of metallic zones interdigitated with insulating zones of different metallic-to-insulator ratios between top and bottom surfaces originating from different heights of metallic and plastic zones. In FIG. 3, the zones designated 113 and 114 have the same configuration in FIG. 2, indicating that these zones have the undiminished metal height 401. Consequently, zones 113 and 114 have low electrical and thermal resistance and are thus especially suitable to carry large electrical currents and to dissipate thermal energy.

(19) Another embodiment of the invention is a method for fabricating an interposer 110 for semiconductor devices. The process flow starts with providing a flat sheet 410 of electrical conductor with a first height 401, a first surface 410a in a first plane, and a second surface 410b in a second plane. The conductor is preferably a metal selected from a group including copper, aluminum, iron-nickel alloys, and Kovar; the first height 401 is preferably in the range from 100 to 300 m.

(20) In the next step, the sheet is patterned, preferably by etching, into a plurality of metal zones 111 separated by gaps 412. The patterning technique may be selected from a group including etching, stamping, planishing, and ion milling. Next, starting from the second surface 410b of the sheet, metal is removed from at least portions 415 of certain zones in order to reduce the first height 401 to a second height 402 smaller than the first height. Next, the gaps 412 and the thinned zone portions 415 are filled with an insulting material bordered by the first and the second plane. First surface 410a is planar throughout the first plane, and the second surface 410b is planar throughout the second plane. The preferred filling technique is molding with a polymeric compound. A flat interposer is thus created with a network of metallic zones interdigitated with insulating zones of different metal-to-insulator ratios between top surface 410a and bottom surface 410b.

(21) Another embodiment of the invention is a stacked semiconductor system, which includes an interposer of half-etched and molded sheet metal. An exemplary system and its construction are illustrated in FIGS. 5 to 10. FIG. 5 shows the top surface (first surface) of an interposer 510 with a layout of the metallic zones for assembling flip-assembled integrated circuit chips and field-effect transistors chips (with vertical terminals), as they are used for a synchronous Buck converter. The top surface (first surface) of the interposer is designated 510a in FIG. 6; surface 510a is planar, i.e., is in a first plane. FIG. 6 shows that interposer 510 has a height 601; the second surface 510b is in a parallel second plane. Consequently, interposer 510 has a sheet-like configuration.

(22) The top surface of interposer 510 is patterned in metallic zones 511 separated by gaps 512. As mentioned, metallic zones 511 have a variety of shapes and sizes, selected and designed to be suitable for attaching semiconductor chips. In addition, certain zones have metal thickness reduced from the original height and instead filled with insulating material. These zones are intended to conduct small electrical currents for signals, while zones with undiminished metal height are capable of conducting large electrical currents for power and dissipating thermal energy. It is preferred that selected areas of the metallic zones have a metallurgical surface composition suitable for solder attachment; examples are gold-clad copper surfaces. Other selected areas may have a metallurgical (for instance, noble) surface for low resistance contact by other metals, such as tabs of copper leadframes. In FIG. 5, exemplary landing areas for leadframes tabs are marked by dashed outlines (see also FIG. 9B).

(23) Gaps 512 are filled with insulating material, preferably molding compound due to ease of fabrication (see below). In addition, insulating material, such as molding compound, is filling all spaces opened by thinning the metal of selected zones; the insulating material is filling the opened spaces up to the first and second planes so that the whole interposer remains planar.

(24) FIG. 6 depicts several semiconductor chips attached to the metallic zones of the interposer of FIG. 5. In the example described, the chips come in two sets. Semiconductor chips of a first set include integrated circuits with attached solder balls suitable for flip-chip attachment; semiconductor chips of a second set include vertical field-effect transistors with terminals on a first chip surface and terminals on the opposite second chip surface. Chip 610 is a chip of the first set; in the example of FIG. 6, it represents a control chip for a Buck converter, including an integrated circuit and an array of terminals with attached solder balls. FIG. 6 depicts chip 610 flipped onto the first surface of the interposer so that each solder ball contacts a respective metallic zone. (For clarity purposes, chip 601 is shown as being transparent in FIG. 6).

(25) Chips 611 and 612 are chips of the second set. (For clarity purposes, the chips are shown in FIG. 6 as being transparent). As FIG. 6 indicates, the first chip terminals on the first chip surfaces are attached to respective metallic zones, while the second chip terminals on the second chip surfaces face away from the interposer and are thus directly visible in the top view of FIG. 6.

(26) In order to contact these second terminals of the second chip set, a leadframe 700 as illustrated in FIG. 7 is used. This leadframe is designed to have pads 701 and leads 702 for attachment to the second terminals (preferably by solder or a conductive adhesive) and to allow free space 703 for chips elevated by solder balls to a height larger than approximately a chip thickness.

(27) Leadframe 700 of FIG. 7 is referred to as first leadframe. In addition, a second leadframe 800 is needed to contact the metallic zones of the second surface of the interposer, which are illustrated for this example in FIG. 3. The metal sheet, from which second leadframe 800 is manufactured (preferably by stamping), is preferably selected from a group of metal including, copper, aluminum, iron-nickel alloys, and Kovar, and may have a thickness between about 100 and 300 m. For reasons of easy assembly, one surface of the metal (designated 801 in FIG. 9B) may be plated with a layer of metal or compound suitable for soldering (such as tin, or nickel followed by palladium), or suitable as protection against corrosion (such as silver, or gold).

(28) Attaching the metallic zones of the second surface of the interposer 510 to the second leadframe 800, and then attaching the first leadframe 700 to the second terminals of the second set chips 611, produces the assembled substrate as depicted in FIGS. 9A and 9B. The interposer 510 is sandwiched between the first and the second leadframes. As required, passive components such as capacitors 901 and 902 and inductor 903 (see FIG. 10) may be attached to the surface 700a of the first leadframe 700 opposite the second terminals of the second set chips, forming a stacked semiconductor system 900. The attachment may use a material such as solder, conductive adhesive, z-axis conductor, or carbon nanotubes.

(29) As FIG. 9B illustrates, it is helpful for the assembly of many devices, when first leadframe 700 includes downset tabs 710, which are bent at an angle from the plane of the leadframe. Downset tabs 710 provide electrical connections from metal in the leadframe plane to metallic zones of the interposer. A plurality of landing areas for leadframe tabs 710 is marked in FIG. 5 by dashed outlines.

(30) FIG. 10 illustrates a completed system 1000, which includes a packaging compound 1001 encapsulating the stacked semiconductor system 900 with the attached components.

(31) Another embodiment of the invention is a method for fabricating a stacked semiconductor system, which includes an interposer of half-etched and molded sheet metal. The method starts by providing a flat strip 100 of interposer with a first surface 410a in a first plane, a second surface 410b in a parallel second plane, and a uniform first height 401 between the surfaces. Strip 100 is then patterned into a plurality of interposer sites 110 and each site into a plurality of metallic zones 111, 113, 114 separated by gaps 112. While certain zones (113, 114) include metal of a first height 401, other zones (111) have been etched to include metal of a second height (402) smaller than the first height. An insulating material fills the gaps 112 and the zone differences 415 between the first and the second heights.

(32) Furthermore, sets of semiconductor chips are provided. The first set includes chips 610, which have first terminals on a first chip surface; the second set including chips (611, 612) with first terminals on a first surface and second terminals on the opposite second surface. In the next step, the first terminals of both the first and the second set chips are attached (preferably using solder or a conductive adhesive) onto respective metal zones of the first interposer surface. As a consequence, the second terminals of the second set chips are facing away from the interposer.

(33) In the next process step, a first leadframe 700 is provided. The pads and leads of this first leadframe are attached to respective second terminals of the second set chips. In addition, downset tabs 710 which are bent at an angle from the planar leadframe are brought into contact with metallic zones of the interposer. Then, a second leadframe 800 is provided. Respective pads of this second leadframe are attached to metal zones of the second interposer surface. Stacked semiconductor systems are thus assembled, which have a flat interposer 510 sandwiched between parallel first (700) and second (800) leadframes.

(34) In the next step, passive electronic components (901, 902, 903) are attached to the surface of the first leadframe 700 opposite to the second terminals of the second set chips. Thereafter, the stacked semiconductor systems with the attached components are packaged in an encapsulation compound such as a molding compound. If the second leadframe 800 has not been pre-plated, it may be advantageous for some devices to plate a solderable or protective post-mold layer on the exposed outer surface 801. Finally, the packaged strip 100 is singulated into discrete packaged stacked semiconductor systems. A preferred singulation method uses sawing.

(35) While this invention has been described in reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. As an example, the invention applies not only to field effect transistors, but also to other suitable power transistors.

(36) As another example, the invention applies to metal sheets with uniform surface preparation (for instance for soldering and for molding compound adhesion) and with localized surface preparation such as plating. As another example, the invention applies to interposers specifically manufactured for low cost (selection of base metal and surface preparation) such as relatively thick aluminum sheets.

(37) It is therefore intended that the appended claims encompass any such modifications or embodiments.