METHODS FOR PRODUCTION AND TRANSFER OF PATTERNED THIN FILMS AT WAFER-SCALE
20200223206 ยท 2020-07-16
Inventors
Cpc classification
B33Y10/00
PERFORMING OPERATIONS; TRANSPORTING
B81C1/00634
PERFORMING OPERATIONS; TRANSPORTING
B32B38/10
PERFORMING OPERATIONS; TRANSPORTING
B82Y40/00
PERFORMING OPERATIONS; TRANSPORTING
B32B38/18
PERFORMING OPERATIONS; TRANSPORTING
B81C2201/0153
PERFORMING OPERATIONS; TRANSPORTING
B81C2201/0194
PERFORMING OPERATIONS; TRANSPORTING
International classification
B32B38/10
PERFORMING OPERATIONS; TRANSPORTING
B32B37/00
PERFORMING OPERATIONS; TRANSPORTING
B81C1/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
Methods for replication and lift-off of micro/nano structures in single or multilayer thin films from a master substrate at wafer scale. The methods utilize polymeric materials with low-elastomeric properties to enhance the mechanical strength of the thin films during the replication and liftoff process from a master substrate, wherein the flexible polymer can have stand alone integrity. The master substrate can contain a surface relief which has a desired pattern to be replicated.
Claims
1. A method for transferring an impression of a surface relief from a master substrate onto a thin film, the method comprising: coating said surface relief of said master substrate with said thin film, the thin film being prone to breaks and cracks; and coating said thin film with a removable protective layer, wherein said removable protective layer is a flexible low-elastomeric polymer and has stand alone integrity; detaching, from said master substrate, said removable protective layer carrying said thin film.
2. The method of claim 1, further comprising coating said master substrate with a release agent.
3. The method of claim 2, where said release agent is a sacrificial layer for etching and releasing said thin film from said master substrate.
4. (canceled)
5. The method of claim 1, wherein said thin film comprises a single layer of metal, dielectric, or semiconductor.
6. The method of claim 1, wherein said thin film comprises a multilayer stack comprised of one or more metals, dielectrics, and/or semiconductors.
7. The method of claim 1, wherein said thin film comprises a multilayer stack wherein surface relief features in each layer of the multilayer stack are substantially identical and aligned vertically.
8. (canceled)
9. The method of claim 1, further comprising cleaning said master substrate after detaching said removable protective layer carrying said thin film from said master substrate, enabling a further transferring of the surface relief from the master substrate onto a second thin film.
10. The method of claim 9, further comprising coating the surface relief of the master substrate with the second thin film.
11. The method of claim 2, wherein said master substrate is coated with the release agent in a pattern.
12. (canceled)
13. (canceled)
14. The method of claim 1, wherein said surface relief of master substrate is patternless.
15. (canceled)
16. The method of claim 1, further comprising bonding said removable protective layer carrying said thin film from either protective layer side or thin film side to a secondary substrate.
17. (canceled)
18. The method of claim 1, further comprising bonding said removable protective layer to a secondary substrate before said detaching said thin film and said removable protective layer from the master substrate.
19. The method of claim 18, wherein said detaching comprises detaching said secondary substrate which carries said removable protective layer and said thin film from the master substrate.
20. (canceled)
21. (canceled)
22. The method of claim 1, further comprising removing at least part of said removable protective layer carrying said thin film from said thin film.
23. The method of claim 22, wherein said removing of said removable protective layer is performed with a dry or wet etch process.
24. The method of claim 1, wherein the coating further comprises fabricating said removable protective layer further comprises fabricating with at least one of spin-coating UV-thermal curable polymers, evaporation, sputtering, and/or spraying, or fabricating with one or more laminar polymers, or fabricating with melting and solidifying one or more plastic sheets.
25. (canceled)
26. (canceled)
27. (canceled)
28. The method of claim 1, wherein said flexible low-elastomeric polymer comprises a plastic, Benzocyclobutene (BCB), SUB, Poly(methyl methacrylate) (PMMA), or spin-on-glass (SOG).
29. (canceled)
30. The method of claim 1, wherein said low-elastomeric polymer has a Young's Modulus of at least 10 Mpa.
31. The method of claim 1, wherein said removable protective layer has more than one low-elastomeric polymer.
32. (canceled)
33. A surface relief impression transfer system, comprising: a master substrate having a surface relief; a thin film for coating said surface relief of said master substrate, the thin film detachable from the master substrate, the thin film being prone to breaks and cracks; and a removable protective layer for coating said thin film, wherein said removable protective layer is a flexible low-elastomeric polymer, has stand alone integrity, and is detachable from the master substrate along with carrying the thin film.
34. (canceled)
35. (canceled)
36. (canceled)
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Embodiments will now be described by way of examples with reference to the accompanying drawings, in which like reference numerals may be used to indicate similar features, and in which:
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DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS
[0029] In an example embodiment, there is provided a method for transferring an impression of a surface relief from a master substrate onto a thin film, the method including: coating said surface relief of said master substrate with said thin film; and coating said thin film with a protective layer, wherein said protective layer is a flexible low-elastomeric polymer; and detaching, from said master substrate, said protective layer carrying said thin film.
[0030] In an example embodiment, there is provided a surface relief impression transfer system, including: a master substrate having a surface relief; a thin film coating said surface relief of said master substrate, the thin film detachable from the master substrate; and a protective layer coating said thin film, wherein said protective layer is a flexible low-elastomeric polymer.
[0031] Planar and three dimensional nano/microstructures in single or multilayer thin films have been fabricated with a variety of lithography techniques. For example, metallic nanostructures in a thin film have been produced with different fabrication tools such as electron beam lithography and focused ion beam. However, these tools are very expensive and they are capable of producing nano/microstructures over a small area suitable for research purposes, but not suitable for high volume manufacturing. Industrial-scale manufacturing has been performed with methods such as nano-imprint lithography and laser interference lithography to produce nanostructures over large areas (e.g. wafer scale). For example, Y. Chuo et. al., Method for fabrication of nano-structures, U.S. Patent Application No. 2014/0093688, teaches that a master stamp with an array of nano-cones can be used for rapid roll to roll fabrication of nano-holes pattern onto the soft materials such as polymers. Some replication techniques have been introduced for producing patterns and transferring material from a master template such as template-stripping and nano-transfer printing. For example, Chanda, et al., Large-area flexible 3D optical negative index metamaterial formed by nanotransfer printing, Nat Nano 6, 402-407 (2011), incorporated herein by reference, teaches that nano-transfer printing (nTP) of a metamaterial with transfer from a master substrate to a target substrate using an intermediate elastomeric slab can been performed at the 4-inch wafer scale. D. Bhandari et. al., Nanotransfer printing using plasma etched silicon stamps and mediated by in situ deposited fluoropolymer, J. Am. Chem. Soc. 133, 7722-7724 (2011) and J. Zaumseil, et al., Three-dimensional and multilayer nanostructures formed by nanotransfer printing, Nano Letters 3, 1223-1227 (2003), both incorporated herein by reference, teach that nTP methods can be utilized for fabrication of dispersed metallic nano-particle patterns. P. Jia, et. al., Plasmonic nanohole array sensors fabricated by template transfer with improved optical performance, Nanotechnology 24, 195501 (2013), incorporated herein by reference, teach that nanohole arrays in a thin metal film can be transferred from a master silicon substrate onto an elastomeric PDMS slab. C. Schaper, U.S. Pat. No. 7,345,002 B2 (2008), incorporated herein by reference, teaches that water soluble polymer can be used to replicate and transfer patterns from a master substrate to a target substrate.
[0032] The optical and electrical performance of single or multilayer micro/nanostructure thin films depends significantly on surface quality requiring clean fabrication of structures. Moreover, the ability to replicate single or multilayer nano/micro structures thin films over large scale (e.g. wafer scale) with high yields have been limited due to fragility of the thin films. For example, it has been shown that imprinting and embossing techniques result in surface deformation and non-uniform nano/microstructure shape and surface quality. The nTP process for transferring a single or multilayer thin film has not been successful due to the fragility of the thin film and the appearance of breaks and cracks in the film due to the elastomeric carrier, which reduce yield and degrade performance. Template stripping processes have been limited to small areas of nanostructures and result in defects across the sample. Therefore, many existing methods have been unable to produce high quality, high yield wafer scale nano/microstructures in single or multilayer thin films.
[0033] In at least some example embodiments, reference to sub-wavelength can include a nano-structure or defined aperture, or defined pillar, or defined particle, which is smaller than the wavelength of the electromagnetic field, radiation and/or light incident upon that structure or defined aperture. Similarly, in some example embodiments, any reference to nano herein can be similarly modified, configured or applied to other sizes of structures, including pico or smaller, micro or larger, depending on the particular application and/or the incident electromagnetic field.
[0034] Reference is now made to
[0035] In some example embodiments, low-elastomeric polymers include polymers with higher Young's Modulus at least one order of magnitude higher than regular elastic PDMS (Young's Modulus less than 1 MPa) material. Moreover, a low-elastomeric polymer may further include a Young's Modulus between 500 MPa and 10 GPa to facilitate the transfer and printing process.
[0036] In an example embodiment, the replication method 100 for manufacturing multilayer thin films can be used several times to print nano/microstructures with the same or different materials on top of each other on the same secondary substrate. In an example embodiment, the transferred flexible single or multilayer micro/nanostructure thin films may be used as a final apparatus or attached to another apparatus. One skilled in the art may recognize that the flexible polymer carrying the single or multilayer thin film can have stand alone integrity.
[0037] In an example embodiment, instead of thermal or UV curable material in process 108, solid plastic material can be placed on the surface of the single or multilayer thin film and the temperature can be raised to allow the plastic to reach its glass transition temperature (or melting point) and then cooled down to adhere to the surface of the thin film. The plastic acts as a low-elastomeric material enabling subsequent transfer and print processes. Suitable plastics are PET, Polycarbonate, and Nylon. In some example embodiments, different low-elastomeric polymer deposition methods can be used such as sputtering, evaporation, and spraying.
[0038] In an example embodiment, the release agent can be a sacrificial layer for etching and releasing the thin film from the master substrate.
[0039] In an example embodiment, the release agent can be materials such as gold film on silicon oxide surface, fluoropolymer and 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (known as FDTS).
[0040] In an example embodiment, removing 114 of the protective layer can be performed with a dry or wet etch process. In some example embodiments, fabricating the protective layer can include: fabricating with spin-coating UV-thermal curable polymers; fabricating with at least one of evaporation, sputtering, and/or spraying; fabricating with laminar polymers; or fabricating with melting and solidifying plastic sheets.
[0041] A replication method 200 for manufacturing single or multilayer micro/nanostructure thin films from a master substrate directly onto a secondary substrate is provided in
[0042] In an example embodiment, deposition of the release agent can be in pattern to facilitate detachment from predefined areas of the master substrate. This is useful when it is desirable to transfer the thin film to predefined areas of the secondary substrate, such as a silicon wafer prepared with image sensor electronics, or a patterned silicon wafer.
[0043] In an example embodiment, the replication method 200 for manufacturing multilayer thin films can be used several times to print nano/microstructures with same or different materials on top of each other on the same secondary substrate. In an example embodiment, bonding the polymer layer resulting from process 208 to the secondary substrate (at process 210) can be done through an indirect bonding process. In indirect bonding process, some thermal or UV curable adhesive material may be added onto the secondary substrate before bonding process.
[0044] The secondary substrate (at process 210) can, for example, include at least one of glass, a flexible material, a display, a window, a polymer, metal, a semiconductor, a sensor, an image sensor, a light, a tip of a fiber optic cable, a lens, a mirror, a pixelated nanohole array, a color filter array, a single layer thin film, or a multilayer thin film.
[0045] A method 300 for lifting off non-adhered single or multilayer films from a substrate is provided in
[0046] In an example embodiment, the liftoff method 300 can be used for lifting off non-adhered films from other materials on a substrate. For example, various materials are deposited and patterned onto the substrate and the lift-off process 300 is utilized to remove materials that are not adhered to the substrate and not adhered to the material underneath. One skilled in the art may recognize that the adherence of material is not only dependent on non-adhesive properties of material with respect to each other, but also to the structures on the substrates as well as etching and deposition methods. In an example embodiment, an elastomeric polymer block can be used to aid in the liftoff method 300.
[0047] To provide an example for replication method of 100, a single layer nano-hole array in a 100-nm gold film was transferred and printed onto a secondary substrate from a master substrate.
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[0050] To provide an example for replication method 100 for multilayer nanostructure thin films, a double layer nano-hole array in gold film was transferred and printed onto a secondary substrate from the master substrate. To fabricate a double-layer gold nano-hole array, we used two different approaches. The first approach was to print a nano-hole array layer two times one on top of the other using two times replication method 100. The first nano-hole array layer with a few microns thick PMMA was transferred and printed onto a Pyrex substrate coated with a 360-nm thick layer of PMMA using the replication method of 100 and was followed by oxygen plasma etching of the PMMA on the gold film. Then, a 360-nm thick layer of PMMA was spin-coated on the top surface of the printed nano-hole array and was used as a bonding layer for printing of the second nano-hole array layer. The second 100-nm thick nano-hole array layer was printed on the top of the first PMMA-coated nano-hole array layer using a second replication method of 100 and is shown schematically in
[0051] Reference is now made to
[0052] To provide an example for replication method of 200 for a single layer nanostructure thin film, single layer wire grid polarizers were replicated in a gold film and the transferred to a secondary substrate using replication method 200. To fabricate the master substrate, a 200-nm thick photoresist was spin-coated onto the surface of 4-inch Silicon wafer (100 mm diameter, 500 nm thick, SVM corporation, Santa Clara, Calif., USA) and patterned with electron beam lithography machine (EBL; LEO, 1530 e-beam lithography, Zeiss, Oberkochen, Germany). The patterns consisted of pixelated wire grid polarizers with wire grids in four different orientation angles (0, 45 90, and 135 degree) in silicon substrate. The entire fabricated device dimension is 2 mm by 2 mm. Each wire grid polarizer is about 6.4 nm by 6.4 nm and the spacing between adjacent wire grid polarizers is 1 nm. The line spacing between wires is about 140 nm and the line width of each wire was measured about 85 nm. A DRIE machine was employed to transfer patterns into the silicon wafer with a pattern depth of 250 nm. The silicon wafer was then coated with 10 nm SiO.sub.2 as a release layer for the gold film.
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[0055] To provide an example for a part of replication method 100 for a single layer nanostructure thin film on flexible substrate, a single layer pixelated wire grid polarizer in a gold film was replicated on to a flexible substrate using a part of replication method of 100. We used the same aforementioned silicon master substrate for replication of the wire-grid polarizers in 100-nm thick gold film on flexible substrate. A 100-nm thick gold film was evaporated on 4-inch silicon master substrate using electron beam physical vapor deposition. Then, 20-m thick SU8 was spin-coated on top of the gold film and UV/thermal cured, except at the edges of the wafer, and finally developed in SU8 developer. Then, the SU8 polymer with gold on the surface of silicon was stripped from silicon surface. In this example, SU8 polymer was used as a flexible substrate for wire grid polarizes.
[0056] In some example embodiments, the pattern to be replicated can include at least one or a combination of a line grid, a wire grid, a pixelated wire grid, a nanohole array, or a pixelated nanohole array.
[0057] As can be appreciated, the master substrate fabricated with an additive manufacturing method, a subtractive manufacturing method, or lithography.
[0058] In an example embodiment, the thin film includes a single layer of metal, dielectric, or semiconductor. In an example embodiment, the thin film includes a metamaterial or metasurfaces. In an example embodiment, the thin film includes a multilayer stack wherein surface relief features in each layer of the multilayer stack are substantially identical and aligned vertically.
[0059] Certain adaptations and modifications of the described embodiments can be made. For example, in some example embodiments, the master substrate can have a surface relief which is flat, convex, concave, with or without a pattern. In an example embodiment, the master substrate has a surface which is an optical flat. In such embodiments, for example, any of these types of surface reliefs may be transferred to the thin film, carried by the protective layer.
[0060] The above discussed embodiments are considered to be illustrative and not restrictive. Example embodiments described as methods would similarly apply to systems, and vice-versa.
[0061] Variations may be made to some example embodiments, which may include combinations and sub-combinations of any of the above. The various embodiments presented above are merely examples and are in no way meant to limit the scope of this disclosure. Variations of the innovations described herein will be apparent to persons of ordinary skill in the art, such variations being within the intended scope of the present disclosure. In particular, features from one or more of the above-described embodiments may be selected to create alternative embodiments comprised of a sub-combination of features which may not be explicitly described above. In addition, features from one or more of the above-described embodiments may be selected and combined to create alternative embodiments comprised of a combination of features which may not be explicitly described above. Features suitable for such combinations and sub-combinations would be readily apparent to persons skilled in the art upon review of the present disclosure as a whole. The subject matter described herein intends to cover and embrace all suitable changes in technology.