Light emitting element, fluorescent light source device

Abstract

Provided are a light emitting element capable of maintaining high fluorescent intensity over a long period, and a fluorescent light source device. The light emitting element according to the present invention includes: a substrate; a reflection layer formed of a material containing Ag or Al, formed on the upper layer of the substrate; a diffusion prevention layer formed of a layer at least part of which being crystallized, the diffusion prevention layer being formed in contact with a surface of the reflection layer on a side opposite to the substrate; an enhanced reflection layer formed in contact with a surface of the diffusion prevention layer on a side opposite to the substrate; and a fluorescent body layer formed on the upper layer of the enhanced reflection layer.

Claims

1. A light emitting element comprising: a substrate; a reflection layer formed of a material containing Ag or Al, formed on the upper layer of the substrate; a diffusion prevention layer formed of a layer at least part of which being crystallized, the diffusion prevention layer being formed in contact with a surface of the reflection layer on a side opposite to the substrate, an enhanced reflection layer formed in contact with a surface of the diffusion prevention layer on a side opposite to the substrate; and a fluorescent body layer formed on the upper layer of the enhanced reflection layer.

2. The light emitting element according to claim 1, wherein the diffusion prevention layer has a density of more than 3.82 g/cm.sup.3.

3. A fluorescent light source device comprising: the light emitting element according to claim 2; and an excitation light source that irradiates a first surface on a farther side from the substrate of surfaces of the fluorescent body layer with excitation light, wherein the fluorescent body layer radiates fluorescence having a longer wavelength than the excitation light from the first layer upon incidence of the excitation light.

4. The fluorescent light source device according to claim 3, wherein the excitation light source is a light source capable of emitting the excitation light having a maximum power density on the first surface of 100 W/mm.sup.2 or more.

5. The light emitting element according to claim 2, wherein the diffusion prevention layer is formed of an oxide layer.

6. A fluorescent light source device comprising: the light emitting element according to claim 5; and an excitation light source that irradiates a first surface on a farther side from the substrate of surfaces of the fluorescent body layer with excitation light, wherein the fluorescent body layer radiates fluorescence having a longer wavelength than the excitation light from the first layer upon incidence of the excitation light.

7. The fluorescent light source device according to claim 6, wherein the excitation light source is a light source capable of emitting the excitation light having a maximum power density on the first surface of 100 W/mm.sup.2 or more.

8. The light emitting element according to claim 5, wherein the diffusion prevention layer is formed of TiO.sub.2.

9. A fluorescent light source device comprising: the light emitting element according to claim 8; and an excitation light source that irradiates a first surface on a farther side from the substrate of surfaces of the fluorescent body layer with excitation light, wherein the fluorescent body layer radiates fluorescence having a longer wavelength than the excitation light from the first layer upon incidence of the excitation light.

10. The fluorescent light source device according to claim 9, wherein the excitation light source is a light source capable of emitting the excitation light having a maximum power density on the first surface of 100 W/mm.sup.2 or more.

11. The light emitting element according to claim 8, wherein the diffusion prevention layer has a thickness of 5 nm or more and 200 nm or less.

12. A fluorescent light source device comprising: the light emitting element according to claim 11; and an excitation light source that irradiates a first surface on a farther side from the substrate of surfaces of the fluorescent body layer with excitation light, wherein the fluorescent body layer radiates fluorescence having a longer wavelength than the excitation light from the first layer upon incidence of the excitation light.

13. The fluorescent light source device according to claim 12, wherein the excitation light source is a light source capable of emitting the excitation light having a maximum power density on the first surface of 100 W/mm.sup.2 or more.

14. A fluorescent light source device comprising: the light emitting element according to claim 1; and an excitation light source that irradiates a first surface on a farther side from the substrate of surfaces of the fluorescent body layer with excitation light, wherein the fluorescent body layer radiates fluorescence having a longer wavelength than the excitation light from the first surface upon incidence of the excitation light.

15. The fluorescent light source device according to claim 14, wherein the excitation light source is a light source capable of emitting the excitation light having a maximum power density on the first surface of 100 W/mm.sup.2 or more.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a view schematically showing a configuration of one embodiment of a fluorescent light source device.

(2) FIG. 2 is a sectional view schematically showing a configuration of a light emitting element.

(3) FIG. 3 is a sectional view schematically showing a configuration of an enhanced reflection layer.

(4) FIG. 4 is a sectional view schematically showing a configuration of a light emitting element of Comparative Example 1.

(5) FIG. 5 is a graph showing variation in illuminance when the element of Comparative Example 1 is irradiated with excitation light.

(6) FIG. 6 is a sectional view schematically showing the appearance when the element of Comparative Example 1 is irradiated with excitation light having high intensity for a predetermined time.

(7) FIG. 7 is a sectional view schematically showing a configuration of a light emitting element of Comparative Example 2.

(8) FIG. 8 is a graph showing variation in illuminance when each element of Comparative Example 1, Comparative Example 2, and Example 1 is irradiated with excitation light 21.

(9) FIG. 9 is a view schematically showing a conventional fluorescent light source device.

MODE FOR CARRYING OUT THE INVENTION

(10) Referring to drawings, configurations of the light emitting element and the fluorescent light source device of the present invention will be described. In each of the following drawings, the depicted dimensional ratio is not necessarily coincident with the actual dimensional ratio.

(11) [Configuration]

(12) FIG. 1 is a view schematically showing a configuration of one embodiment of a fluorescent light source device. A fluorescent light source device 1 shown in FIG. 1 includes an excitation light source 2, a dichroic mirror 3, and a light emitting element 10.

(13) The excitation light source 2 includes a semiconductor laser device that emits light in the blue region having a wavelength of 445 nm or more and 465 nm or less, for example. The excitation light source 2 may include an optical system such as a collimator lens as necessary.

(14) The light emitting element 10 includes a fluorescent body as will be described later. When the light emitting element 10 is irradiated with excitation light 21 emitted from the excitation light source 2, the fluorescent body included in the light emitting element 10 is excited, and fluorescence 22 is radiated from the light emitting element 10. The fluorescence 22 is light having a longer wavelength than the excitation light 21, and has a wavelength of 470 nm or more and 700 nm or less, for example.

(15) In the fluorescent light source device 1 shown in FIG. 1, the dichroic mirror 3 is configured to transmit the excitation light 21 emitted from the excitation light source 2, while reflecting the fluorescence 22 emitted from the light emitting element 10. The dichroic mirror 3 is arranged so that the mirror surface is inclined at an angle of 45 to the incidence angle of the excitation light 21, for example. With such a configuration, the fluorescence 22 is extracted outside the fluorescent light source device 1, and enters a subsequent optical system (not shown), for example.

(16) The optical arranging method of the fluorescent light source device 1 including the dichroic mirror 3 as shown in FIG. 1 is merely one example, and any arrangement form is possible.

(17) FIG. 2 is a sectional view schematically showing a configuration of the light emitting element 10. As shown in FIG. 2, the light emitting element 10 has a substrate 11, a bonding layer 12, a reflection layer 13, a diffusion prevention layer 14, an enhanced reflection layer 15, and a fluorescent body layer 16.

(18) (Substrate 11)

(19) The substrate 11 is provided for supporting the fluorescent body layer 16 and discharging the heat emitted in the fluorescent body layer 16. The substrate 11 is formed of a material having a thermal conductivity of 90 W/(m.Math.K) or more, specifically, 230 to 400 W/(m.Math.K), for example. Examples of such a material include Cu, copper compounds (MoCu, CuW and the like), and Al.

(20) The thickness of the substrate 11 is, for example, 0.5 to 5 mm From the viewpoint of heat discharge property or the like, it is preferred that the area in the surface of the substrate 11 be larger than the area of the fluorescent body layer 16.

(21) (Bonding Layer 12)

(22) The bonding layer 12 is a layer for bonding the substrate 11, and other layer including the fluorescent body layer 16, and is formed, for example, of a solder material. From the viewpoint of heat discharge property or the like, it is preferred to use, for example, a material having a thermal conductivity of 40 W/(m.Math.K) or more as a material forming the bonding layer 12. More specifically, for example, a cream solder prepared by mixing flux and other impurities with a material such as Sn, Pb and the like to give a creamy (pasty) state, an SnAgCu solder, an AuSn solder and the like can be used. The thickness of the bonding layer 12 is, for example, 20 to 200 m.

(23) Although not illustrated, from the viewpoint of further improving the bonding property between the substrate 11 and the bonding layer 12, a metal film of a Ni/Au film formed, for example, by plating may be formed between the substrate 11 and the bonding layer 12. The thickness of the metal film can be, for example, Ni/Au=1000 to 5000 nm/30 to 1000 nm.

(24) (Reflection Layer 13)

(25) The reflection layer 13 is formed on the upper layer of the bonding layer 12. The reflection layer 13 is provided for reflecting fluorescence that has advanced on the surface opposite to the light extraction surface (on the substrate 11 side) of the fluorescent body layer 16 of the fluorescence 22 generated in the fluorescent body layer 16, and guiding the fluorescence to the light extraction surface side. The reflection layer 13 is formed of a material having high reflectance (for example, 70% or more) for the fluorescence 22 generated in the fluorescent body layer 16, and is formed, for example, of metal consisting of Al or Ag, or a material film containing the metal. Preferably, the reflection layer 13 is formed of Ag. The thickness of the reflection layer 13 is, for example, 100 nm or more and 200 nm or less, and more preferably 120 nm or more and 180 nm or less.

(26) Although not illustrated, from the viewpoint of further improving the adhesiveness between the reflection layer 13 and the substrate 11, a metal film of a Ni/Pt/Au film or a Ni/Au film, formed, for example, by vapor deposition may be formed on a surface of the reflection layer 13 on the substrate 11 side. The thickness of the metal film can be, for example, Ni/Pt/Au=30 nm/500 nm/500 nm.

(27) (Diffusion Prevention Layer 14)

(28) The diffusion prevention layer 14 is located between the reflection layer 13 and the enhanced reflection layer 15, and is formed in contact with a surface of the reflection layer 13 on the side opposite to the substrate 11. The diffusion prevention layer 14 is formed of a layer that is at least partly crystallized, and is not amorphous. The diffusion prevention layer 14 may be formed of a layer that is completely crystallized in the overall region.

(29) As a method for analyzing the condition of crystallization of the diffusion prevention layer 14, for example, a reflection high energy electron diffraction (RHEED) can be recited. A reflection high energy electron diffraction image of the diffusion prevention layer 14 that is partly crystallized shows a ring-like or a dotted pattern according to the crystal orientation. On the other hand, a reflection high energy electron diffraction image of an amorphous layer shows a halo-like (blurred ring-like) pattern. Therefore, the condition of the crystallization can be recognized according to the difference in shape of the reflection high energy electron diffraction image of the objective layer.

(30) In the present embodiment, the diffusion prevention layer 14 is formed of TiO.sub.2 that is at least partly crystallized. At least partial crystallization realizes the high density of the diffusion prevention layer 14. Specifically, the density of the diffusion prevention layer 14 is higher than 3.82 g/cm.sup.3, preferably 3.92 g/cm.sup.3 or more. The density of the diffusion prevention layer 14 can be determined from the relation between the refractive index and the density. The relation between the refractive index and the density is generally represented as a Lorentz equation, and is represented by the equation of r=[(n.sup.21)/(n.sup.2+2)](M/RD), wherein r (g/cm.sup.3) represents a density, n represents a refractive index, M represents a molecular weight (g/mol), and RD represents a molar reflective index (cm.sup.3/mol).

(31) The diffusion prevention layer 14 is not limited to TiO.sub.2, but may be formed of an oxide layer formed of Al.sub.2O.sub.3, SiO.sub.2, Ta.sub.2O.sub.5, ZrO.sub.2, or Nb.sub.2O.sub.5 and the like, a nitride layer formed of SiN or the like, or a fluoride layer formed of MgF.sub.2, CaF.sub.2 or the like. However, from the viewpoint of ensuring high adhesiveness with respect to the reflection layer 13 and the enhanced reflection layer 15, it is preferred that the diffusion prevention layer 14 be formed of an oxide layer. Further, from the viewpoint of ease of deposition of a layer having high crystallinity, it is particularly preferred that the diffusion prevention layer 14 be formed of TiO.sub.2.

(32) Formation of the diffusion prevention layer 14 that is at least partly crystallized can be realized by an EB-IAD method in which vapor deposition is conducted under irradiation with argon ion, for example. In general, for deposition of TiO.sub.2, vapor deposition using the EB method is generally used, and in this case, the deposited TiO.sub.2 is amorphous.

(33) The thickness of the diffusion prevention layer 14 is for example, 5 nm or more and 200 nm or less, more preferably 50 nm or more and 100 nm or less.

(34) (Enhanced Reflection Layer 15)

(35) The enhanced reflection layer 15 is formed in contact with a surface of the diffusion prevention layer 14 on the side opposite to the substrate 11. As shown in FIG. 3, the enhanced reflection layer 15 is an optical multilayer film in which a low refractive index material layer (Low) and a high refractive index material layer (High) are alternately laminated. The thickness of each layer constituting the enhanced reflection layer 15 is about of the wavelength of the fluorescence 22, and is, for example, 5 nm or more and 200 nm or less, more preferably 50 nm or more and 100 nm or less. The overall thickness of the enhanced reflection layer 15 is 10 nm or more and 500 nm or less, more preferably 50 nm or more and 200 nm or less.

(36) As a low refractive index material constituting the enhanced reflection layer 15, for example, SiO.sub.2 (refractive index n=1.45), Al.sub.2O.sub.3 (refractive index n=1.63) or the like can be used. As a high refractive index material constituting the enhanced reflection layer 15, for example, TiO.sub.2 (refractive index n=2.35), Nb.sub.2O.sub.5 (refractive index n=2.37) or the like can be used. By sequentially depositing these materials by sputtering, vacuum vapor deposition or the like method, the enhanced reflection layer 15 is formed.

(37) The layer constituting the enhanced reflection layer 15 may be amorphous, or at least partly crystallized. It suffices that the enhanced reflection layer 15 is provided with at least one low refractive index material layer and at least one high refractive index material layer, and the lamination may be repeated two or more times. When the low refractive index material layer and the high refractive index material layer are laminated repeatedly, the film thickness of each low refractive index material layer and the film thickness of each high refractive index material layer are not necessarily identical.

(38) (Fluorescent Body Layer 16)

(39) The fluorescent body layer 16 is formed on the upper layer of the enhanced reflection layer 15. Upon incidence of the excitation light 21 emitted from the excitation light source 2, the fluorescent body layer 16 generates and radiates fluorescence 22. The fluorescent body layer 16 assumes a rectangular plate-like structure, as one example. The thickness of the fluorescent body layer 16 is, for example, 0.05 to 1 mm.

(40) The fluorescent body layer 16 includes a fluorescent body. More specifically, the fluorescent body layer 16 is formed of a monocrystalline or polycrystalline fluorescent body, or a sintered body of a mixture of the fluorescent body and a ceramic binder. That is, the fluorescent body layer 16 is formed of a monocrystalline or polycrystalline fluorescent body.

(41) In the sintered body of a mixture of a fluorescent body and a ceramic binder used in the fluorescent body layer 16, for example, alumina particles of nano size are used as the ceramic binder. Then the sintered body can be obtained by mixing several % by mass to several tens % by mass of a ceramic binder with respect to 100% by mass of a fluorescent body, and pressing the mixture, followed by sintering.

(42) When the fluorescent body layer 16 is formed of a monocrystalline fluorescent body, for example, the fluorescent body can be obtained by the Czochralski method. To be more specific, a seed crystal is brought into contact with a material in a crucible, and in this condition, the seed crystal is pulled up in the vertical direction while the seed crystal is rotated to cause growth of a single crystal, and thus a fluorescent body of single crystal is obtained.

(43) When the fluorescent body layer 16 is formed of a polycrystalline fluorescent body, for example, the fluorescent body can be obtained, for example, in the following manner First, raw materials such as a base material, an activating material and a baking auxiliary agent are ground by a ball mill or the like, to obtain raw material microparticles of submicron or smaller. Then, using the raw material microparticles, a molded body is formed, for example by a slip cast method, and sintered. Then, the obtained sintered body is subjected to a hot hydrostatic pressure process to obtain a polycrystalline fluorescent body having a porosity of, for example, 0.5% or less.

(44) As the fluorescent body constituting the fluorescent body layer 16, specifically, a YAG fluorescent body doped (activated) with a rare earth compound can be used. In such a fluorescent body, the doping amount of the rare earth element (activating agent) can be about 0.5 mol %. Examples of the rare earth compound include Ce, Pr, and Sm. Concrete examples of the fluorescent body include YAG:Ce, YAG:Pr, YAG:Sm, and LuAG:Ce. The fluorescent body layer 16 may contain a metal compound in the fluorescent body.

(45) [Verification]

(46) Hereinafter, the effect by the light emitting element 1 of the present embodiment is shown by referring to Examples and Comparative Examples. The element corresponding to the above-described configuration of the light emitting element 10 is referred to as Example 1. In Example 1, the diffusion prevention layer 14 is formed of TiO.sub.2 that is at least partly crystallized, and has a density of 3.92 g/cm.sup.3 and a refractive index of 2.45. The enhanced reflection layer 15 is formed of a multilayer film including a plurality of sets of layers of SiO.sub.2/TiO.sub.2. The layers constituting the enhanced reflection layer 15 are amorphous.

(47) (Verification 1)

(48) FIG. 4 is a view schematically showing a configuration of Comparative Example 1. Comparative Example 1 differs from Example 1 in that the diffusion prevention layer 14 is not provided. The reflection layer 13 is in contact with the enhanced reflection layer 15. More specifically, the SiO.sub.2 layer included in the enhanced reflection layer 15 is in contact with the reflection layer 13. The SiO.sub.2 layer has a density of 2.2 g/cm.sup.3 and a refractive index of 1.45.

(49) FIG. 5 is a graph showing variation in illuminance when the element of Comparative Example 1 is irradiated with the excitation light 21 emitted from the excitation light source 2. In FIG. 5, three sets of data obtained by varying the maximum power density of the excitation light 21 are shown. The maximum power density refers to the power density of the part where the power is the greatest on the surface of the fluorescent body layer 16 irradiated with the excitation light 21. In FIG. 5, three cases where the maximum power density of the excitation light 21 is 60 W/mm.sup.2, 80 W/mm.sup.2, and 100 W/mm.sup.2, respectively.

(50) In FIG. 5, the horizontal axis indicates continuous irradiation time of the excitation light 21, and the vertical axis indicates the illuminance maintenance factor. The illuminance maintenance factor refers the rate of illuminance relative to the illuminance in the initial stage of irradiation with the excitation light 21 in each element.

(51) According to FIG. 5, it is found that the illuminance maintenance factor drastically decreases in the case of a maximum power density of 100 W/mm.sup.2, as compared with the cases of 60 W/mm.sup.2, and 80 W/mm.sup.2. As a result of analysis made by the present inventors, it was found that in the element of Comparative Example 1 after irradiation for 270 hours with the excitation light 21 having a maximum power density of 100 W/mm.sup.2, a material layer 19 that is different from the material constituting the enhanced reflection layer 15 precipitated in the enhanced reflection layer 15 as schematically shown in FIG. 6. As a result of more specific investigation, it was confirmed that the material layer 19 is formed of a material containing Ag.

(52) From this result, the present inventors inferred that by irradiation of the element of Comparative Example 1 with the excitation light 21 having a high power density, Ag which is a material constituting the reflection layer 13 diffuses on the enhanced reflection layer 15 side, and decreases the reflectance and the transmittance in the enhanced reflection layer 15, and thus the illuminance decreases, as described above in MEANS FOR SOLVING THE PROBLEMS.

(53) (Verification 2)

(54) FIG. 7 is a view schematically showing a configuration of Comparative Example 2. Likewise Comparative Example 1, Comparative Example 2 does not have the diffusion prevention layer 14. Comparative Example 2 is different from Comparative Example 1 in that an Al.sub.2O.sub.3 layer 31 for improving the adhesiveness is provided between the enhanced reflection layer 15 and the reflection layer 13. The Al.sub.2O.sub.3 layer 31 is in contact with the SiO.sub.2 layer contained in the enhanced reflection layer 15 and the reflection layer 13. The Al.sub.2O.sub.3 layer 31 has a density of 3.25 g/cm.sup.3, and a refractive index of 1.63.

(55) FIG. 8 is a graph showing variation in illuminance when each element of Comparative Example 1, Comparative Example 2 and Example 1 is irradiated with the excitation light 21 emitted from the excitation light source 2 at a maximum power density of 100 W/mm.sup.2. The data of Comparative Example 1 is the same as the data at 100 W/mm.sup.2 in FIG. 5.

(56) According to FIG. 8, also in the element of Comparative Example 2, it is found that the illuminance starts decreasing largely directly after start of the irradiation. More specifically, both in the element of Comparative Example 1 and the element of Comparative Example 2, it is found that the illuminance decreases to about 98% after a lapse of about 100 hours from start of illumination. In contrast to this, in the element of Example 1, it is found that approximately 100% of illuminance is maintained after a lapse of 500 hours.

(57) While Comparative Example 2 lacks data after a lapse of 100 hours or more in FIG. 8, it is hard to imagine that the illuminance shows the rising trend after 100 hours or later, and it is expected that the illuminance continually decreases with the lapse of time by referring to the data of Comparative Example 1.

(58) Although not shown in the graph, the same verification was conducted for the element in which the TiO.sub.2 layer included in the enhanced reflection layer 15 is brought into contact with the reflection layer 13 in the element of Comparative Example 1 (hereinafter, referred to as Comparative Example 3), and also in this case, the illuminance maintenance factor decreased to about 98% after a lapse of about 100 hours as is the case with Comparative Example 1 or Comparative Example 2. The TiO.sub.2 layer included in the enhanced reflection layer 15 is amorphous as described above, and has a density of 3.82 g/cm.sup.3 and a refractive index of 2.35.

(59) According to the above verification, in each of Comparative Examples 1 to 3, the density of the layer being in contact with the upper surface of the reflection layer 13 is low, and a large number of dangling bonds exist, so that Ag ions constituting the reflection layer 13 are attracted to the dangling bonds. This would result in diffusion of the material containing Ag in the enhanced reflection layer 15 to decrease the illuminance maintenance factor. On the other hand, according to the element of Example 1, since the diffusion prevention layer 14 having high density is in contact with the upper surface of the reflection layer 13, Ag ions cannot easily diffuse in the diffusion prevention layer 14, and this would result in prevention of advance into the enhanced reflection layer 15. The above verification reveals that the density of the diffusion prevention layer 14 formed in contact with the upper surface of the reflection layer 13 is preferably more than 3.82 g/cm.sup.3, and more preferably 3.92 g/cm.sup.3 or more.

(60) According to the above verification result, the diffusion prevention layer 14 may be a layer having high crystallinity and high density, and more preferably a layer in a complete crystalline state. The diffusion prevention layer 14 realizes the function of preventing diffusion of Ag ions even when it is partly crystallized, in comparison with an amorphous layer. Therefore, it is possible to suppress decrease in illuminance in the case of irradiation with excitation light having high intensity.

(61) In the above-described embodiment, the case where the reflection layer 13 is formed of Ag has been described, it is inferred that the effect is realized also in the case where the reflection layer 13 is formed of Al for the same reason. The same applies also to the case where the reflection layer 13 is formed of a metal material containing Ag, Al.

DESCRIPTION OF REFERENCE SIGNS

(62) 1 Fluorescent light source device 2 Excitation light source 3 Dichroic mirror 10 Light emitting element 11 Substrate 12 Bonding layer 13 Reflection layer 14 Diffusion prevention layer 15 Enhanced reflection layer 16 Fluorescent body layer 19 Material layer containing Ag 21 Excitation light 22 Fluorescence 31 Al.sub.2O.sub.3 layer 100 Conventional fluorescent light source device 110 Excitation light source 120 Conventional light emitting element 121 Substrate 122 Bonding layer 123 Reflection layer 124 Enhanced reflection layer 125 Total reflection layer 126 Fluorescent body layer 131 Excitation light 132 Fluorescence