Magnetically activated switch having magnetostrictive material
10714286 ยท 2020-07-14
Assignee
Inventors
Cpc classification
H01H36/00
ELECTRICITY
H01H37/58
ELECTRICITY
International classification
Abstract
Switch assemblies and a switching method are disclosed. In some embodiments, a switch assembly may include a first contact element, and a second contact element operable with the first contact element. The first and second contact elements form an open circuit in a first configuration and form a closed circuit in a second configuration. At least one of the first contact element and the second contact element includes a magnetostrictive material. During operation, a magnetic field from a magnet causes the magnetostrictive material to deform or change shape/dimensions, thus causing the first and second contact elements to open or close. In some embodiments, the switch assembly is a micro-electro-mechanical-system (MEMS) switch.
Claims
1. A switch assembly comprising: a first contact element operable with a second contact element to form an open circuit or a closed circuit, at least one of the first contact element and the second contact element including a magnetostrictive element coupled to a bi-metallic strip, the magnetostrictive element operable to bias the first contact element and the second contact element relative to one another to form the open circuit or the closed circuit, wherein the bi-metallic strip comprises a first strip formed of a first metal having a first coefficient of thermal expansion and a second strip coupled to the first strip and formed of a second metal having a second coefficient of thermal expansion different from the first coefficient of thermal expansion.
2. The switch assembly of claim 1, further comprising a magnet proximate the first and second contact elements, wherein a magnetic field of the magnet causes the magnetostrictive element to change shape.
3. The switch assembly of claim 2, wherein movement of the magnet relative to the first and second contact elements causes the first and second contact elements to change between the first configuration and the second configuration.
4. The switch assembly of claim 1, wherein the magnetostrictive element is directly physically coupled to the first contact element or the second contact element.
5. The switch assembly of claim 1, wherein at least one of the first contact element and the second contact element have a curved shape.
6. The switch assembly of claim 1, wherein the first contact element curves away from the second contact element in a first configuration, and wherein the first contact element curves towards the second contact element in a second configuration.
7. The switch assembly of claim 1, further comprising a switch circuit receiving an indication of the open circuit or the closed circuit.
8. A switching method comprising: providing a first contact element operable with a second contact element, wherein the first and second contact member form an open circuit in a first configuration and form a closed circuit in a second configuration, and wherein at least one of the first contact element and the second contact element includes a magnetostrictive element coupled to a bi-metallic strip, wherein the bi-metallic strip comprises a first strip formed of a first metal having a first coefficient of thermal expansion and a second strip coupled to the first strip and formed of a second metal having a second coefficient of thermal expansion different from the first coefficient of thermal expansion; and biasing the first contact element and the second contact element relative to one another using a magnetic field to change the shape the magnetostrictive element.
9. The switching method of claim 8, further comprising changing the shape of the magnetostrictive element to form the open circuit and the closed circuit.
10. The switching method of claim 8, further comprising providing a magnet proximate the first and second contact elements.
11. The switching method of claim 10, further comprising causing the first and second contact elements to change between the first configuration and the second configuration in response to movement of the magnet relative to the first and second contact elements.
12. The switching method of claim 8, further comprising directly physically coupling the magnetostrictive element to the first contact element or the second contact element.
13. The switching method of claim 8, wherein at least one of the first contact element and the second contact element have a curved shape.
14. The switching method of claim 8, wherein the first contact element curves away from the second contact element in the first configuration, and wherein the first contact element curves towards the second contact element in the second configuration.
15. The switching method of claim 8, further comprising providing an indication of the open circuit or the closed circuit.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The accompanying drawings illustrate exemplary approaches of the disclosed switch assemblies so far devised for the practical application of the principles thereof, and in which:
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(9) The drawings are not necessarily to scale. The drawings are merely representations, not intended to portray specific parameters of the disclosure. Furthermore, the drawings are intended to depict exemplary embodiments of the disclosure, and therefore is not considered as limiting in scope.
(10) Furthermore, certain elements in some of the figures may be omitted, or illustrated not-to-scale, for illustrative clarity. The cross-sectional views may be in the form of slices, or near-sighted cross-sectional views, omitting certain background lines otherwise visible in a true cross-sectional view, for illustrative clarity. Furthermore, for clarity, some reference numbers may be omitted in certain drawings.
DETAILED DESCRIPTION
(11) The present disclosure will now proceed with reference to the accompanying drawings, in which various approaches are shown. It will be appreciated, however, that the switch assembly may be embodied in many different forms and should not be construed as limited to the approaches set forth herein. Rather, these approaches are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In the drawings, like numbers refer to like elements throughout.
(12) As used herein, an element or operation recited in the singular and proceeded with the word a or an should be understood as not excluding plural elements or operations, unless such exclusion is explicitly recited. Furthermore, references to one approach or one embodiment of the present disclosure are not intended to be interpreted as excluding the existence of additional approaches and embodiments that also incorporate the recited features.
(13) Furthermore, spatially relative terms, such as beneath, below, lower, central, above, upper, proximal, distal, and the like, may be used herein for ease of describing one element's relationship to another element(s) as illustrated in the figures. It will be understood that the spatially relative terms may encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
(14) As disclosed, embodiments herein provide switch assemblies and switching methods. In some embodiments, a switch assembly may include a first contact element, and a second contact element operable with the first contact element, wherein the first and second contact members form an open circuit in a first configuration and form a closed circuit in a second configuration. At least one of the first contact element and the second contact element includes a magnetostrictive material. In some embodiments, the switch assembly further include a magnet proximate the first and second contact elements, wherein a magnetic field of the magnet causes the magnetostrictive material to deform or change shape/dimensions.
(15) Employing a magnetostrictive activated switch may advantageously reduce the cost of switches, e.g., for use is MEMS. Unlike conventional reed switches, which are unable to sustain a large enough magnetic field to generate sufficient contact force to give a low contact resistance, the magnetostrictive effect from the magnetostrictive activated switch can generate much higher forces than magnetic attraction. The magnetostrictive activated switch therefore improves activation, for example, when manufactured using MEMS techniques.
(16) In various embodiments, a MEMS magnetostrictive switching device may include two flexible, cantilevered members that are deflected in the presence of a magnetic field. One or more of the cantilevered members may include a magnetostrictive material. When a magnetic field is applied in the proper orientation, the magnetostrictive material may expand. As one or both of the cantilevered members deflect, contact is made with one another, closing a circuit electrically. In other embodiments, the MEMS magnetostrictive switching device may be configured in a normally closed architecture, such that the switch opens rather than closes on application of a magnetic field.
(17) Referring now to
(18) In some embodiments, a magnetostrictive element 110 may be coupled to a bi-metallic strip 111 of the first contact element 102 and/or the second contact element 104. For example, as shown, the magnetostrictive element 110 may be directly physically coupled to an outer side 112 of the bi-metallic strip 111 of the first contact element 102. The magnetostrictive element 110 may also be coupled to an inner side 123 of the bi-metallic strip 111 of the first contact element 102. In other embodiments, the first contact element 102 may be made partially or entirely from a magnetostrictive material. In yet other embodiments, another magnetostrictive element (not shown), may be coupled to an inner surface 114 and/or an outer surface 125 of a bi-metallic strip 113 of the second contact element 104.
(19) As used herein, magnetostriction is a phenomenon observed in ferromagnetic materials. Magnetostriction is a combination of elastic, electric, magnetic and, in some situations, thermal fields. Magnetostrictive materials, which make up the magnetostrictive element 110, are solids that develop large mechanical deformations when subjected to an external magnetic field. This phenomenon is attributed to the rotations of small magnetic domains in the material, which are randomly oriented when the material is not exposed to a magnetic field. The orientation of these small domains by the imposition of the magnetic field creates a strain field. As the intensity of the magnetic field is increased, more and more magnetic domains orientate themselves so that their principal axes of anisotropy are collinear with the magnetic field in each region and finally saturation is achieved, thus causing mechanical deformation, such as elongation.
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(21) In non-limiting embodiments, the switch assembly 100 is normally open. In other embodiments, the switch assembly 100 may be normally closed, and opens in response to the magnet 122 proximate thereto. The magnet 122 may travel past the first and second contact elements 102, 104 to activate the switch.
(22) Referring now to
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(24) In the non-limiting embodiment shown, at least one of the first contact element 202 and the second contact element 204 has a curved shape. The first contact element 202 may curve/bend away from the second contact 204 in the first configuration shown in
(25) Turning now to
(26) At block 303, the method 300 may include providing a magnet proximate the first and second contact elements. At block 305, the method may include biasing the first contact element and the second contact element relative to one another by changing a shape or configuration of the magnetostrictive element in response to a magnetic field from the magnet. In some embodiments, the change in shape of the magnetostrictive element causes an open circuit or a closed circuit of a switching circuit electrically connected with the first contact element and the second contact element.
(27) At block 307, the method 300 may include providing an indication of the open circuit or closed circuit between the first and second contact elements.
(28) Turning now to
(29) In some embodiments, the first contact element 402 may include a magnetostrictive element 410 coupled to a bi-metallic strip 411. For example, as shown, the magnetostrictive element 410 and the bi-metallic strip 411 may be directly physically coupled to one another. In other embodiments, the first contact element 402 may be made partially or entirely from a magnetostrictive material. The bi-metallic strip 411 may be a spring-like element providing the necessary robustness and elasticity for making/breaking contact between the first and second contact elements 402, 404. The bi-metallic strip 411 may be a metallic material, a polyimide material, a nitride material, or any other suitable flexible material. As further shown, the assembly 400 may include a microelectronic substrate 430, which may be formed of silicon or any other similar microelectronic substrate material.
(30) In various embodiments, the first and second load lines 425, 427 may comprise copper, gold, aluminum, polysilicon or another suitable electrically conductive material. The first contact element 402 is capable, upon actuation, of switching electrical current between the first and second load lines 425, 427. In operation, when a magnetic flux is applied across a magnetic flux path, the first contact element 402 is actuated in a pre-determined direction.
(31) The assembly 400 may be formed using MEMS fabrication methods. For example, in one non-limiting embodiment, a microelectronic substrate has a thin dielectric layer disposed thereon. The microelectronic substrate may comprise silicon, quartz, aluminum, glass or any other suitable microelectronic substrate material. It is also possible to use a magnetic material for the substrate, such as ferrite nickel, if a non-magnetic dielectric layer is disposed on the substrate. The dielectric layer may comprise silicon nitride, silicon oxide or any other suitable dielectric material. The dielectric layer is typically disposed on the substrate via the use of conventional chemical vapor deposition (CVD) techniques. The dielectric layer serves to isolate the electrical load line conductor metals from the substrate. The second electrical load line may be disposed on the substrate by standard patterning and etch procedures. The second electrical load line may comprise any conductive material, such as doped-silicon, copper, aluminum or the like. The first electrical load line may be disposed on the substrate, wherein the first electrical load line includes any conductive material, such as copper, nickel, aluminum or the like. In some embodiments, the first electrical load line may be overplated with a thin layer of metallic material, such as gold or the like, to insure low electrical resistance at the point of contact.
(32) In sum, embodiments herein provide a magnetostrictive material operable to bias a first contact element and a second contact element relative to one another to form an open or closed circuit. The circuit assemblies and methods described herein advantageously provide a simplified switch, with less components and therefore lower cost.
(33) While the present disclosure has been described with reference to certain approaches, numerous modifications, alterations and changes to the described approaches are possible without departing from the sphere and scope of the present disclosure, as defined in the appended claims. Accordingly, it is intended that the present disclosure not be limited to the described approaches, but that it has the full scope defined by the language of the following claims, and equivalents thereof. While the disclosure has been described with reference to certain approaches, numerous modifications, alterations and changes to the described approaches are possible without departing from the spirit and scope of the disclosure, as defined in the appended claims. Accordingly, it is intended that the present disclosure not be limited to the described approaches, but that it has the full scope defined by the language of the following claims, and equivalents thereof.