Optoelectronic Semiconductor Component and Method for Producing an Optoelectronic Semiconductor Component

Abstract

In an embodiment an optoelectronic semiconductor component includes a lead frame having a first mounting surface, a semiconductor chip arranged on the first mounting surface and having an emission surface, an optical element and a molded body, wherein the optical element has an input-coupling surface oriented transverse to the first mounting surface, wherein the semiconductor chip is configured to emit electromagnetic radiation through the emission surface, a radiation axis of which is parallel to the first mounting surface, wherein the optical element is configured to deflect the electromagnetic radiation of the semiconductor chip coupled in via the input-coupling surface, wherein the molded body is attached to the lead frame and has an alignment surface transverse to the first mounting surface, and wherein the optical element and the alignment surface are in direct contact with each other.

Claims

1.-20. (canceled)

21. An optoelectronic semiconductor component comprising: a lead frame having a first mounting surface; a semiconductor chip arranged on the first mounting surface and having an emission surface; an optical element; and a molded body, wherein the optical element has an input-coupling surface oriented transverse to the first mounting surface, wherein the semiconductor chip is configured to emit electromagnetic radiation through the emission surface, a radiation axis of which is parallel to the first mounting surface, wherein the optical element is configured to deflect the electromagnetic radiation of the semiconductor chip coupled in via the input-coupling surface, wherein the molded body is attached to the lead frame and has an alignment surface transverse to the first mounting surface, and wherein the optical element and the alignment surface are in direct contact with each other.

22. The optoelectronic semiconductor component according to claim 21, wherein the molded body comprises a cavity, which extends to the first mounting surface and in which the semiconductor chip is arranged.

23. The optoelectronic semiconductor component according to claim 22, wherein a side surface of the cavity is an alignment surface.

24. The optoelectronic semiconductor component according to claim 23, wherein the optical element is in direct contact with both the alignment surface and the emission surface, or both the alignment surface and the first mounting surface.

25. The optoelectronic semiconductor component according to claim 22, wherein the cavity is filled with a potting compound.

26. The optoelectronic semiconductor component according to claim 25, wherein the potting compound is flush with an upper edge of the cavity.

27. The optoelectronic semiconductor component according to claim 21, wherein the optical element is bonded to the optoelectronic semiconductor component by an adhesive layer on the first mounting surface or the alignment surface or at least one lateral mounting surface.

28. The optoelectronic semiconductor component according to claim 21, wherein the optical element is configured to cause the beam axis to be deflected through an angle of at least 85° and at most 95°.

29. The optoelectronic semiconductor component according to claim 21, wherein the alignment surface includes an angle of at least 130° and at most 140° with the first mounting surface.

30. The optoelectronic semiconductor component according to claim 21, wherein the lead frame has a second mounting surface opposite the first mounting surface, which is free of material of the molded body.

31. A method for producing an optoelectronic semiconductor component, the method comprising: providing a lead frame having a first mounting surface; forming a molded body to the lead frame such that an alignment surface is formed transverse to the first mounting surface; mounting a semiconductor chip on the first mounting surface; and arranging an optical element on the alignment surface, wherein the alignment surface is brought into direct contact with the optical element and the optical element is aligned with respect to the semiconductor chip based on the alignment surface, and wherein the optical element is brought in direct contact with the emission surface, or wherein the optical element is brought in direct contact with the first mounting surface and wherein a radiation-transmissive encapsulation compound is arranged between the emission surface and the optical element.

32. The method according to claim 31, further comprising forming a cavity in the molded body extending to the first mounting surface, wherein the semiconductor chip is mounted in the cavity.

33. The method according to claim 32, further comprising filling the cavity with a potting compound by jetting or dispensing.

34. The method according to claim 31, wherein forming the molded body comprises forming the molded body by a transfer molding process.

35. The method according to claim 31, further comprising, after forming the molded body, performing a chemical and/or mechanical cleaning to remove residues of the molded body from the first mounting surface.

36. The method according to claim 31, wherein the semiconductor chip is mounted by bonding, sintering or soldering.

37. The method according to claim 31, wherein the method is performed in a wafer compound on a plurality of optoelectronic semiconductor components.

38. The method according to claim 37, further comprising, after completion of all method steps, separating the semiconductor components by sawing or laser separating.

39. The method according to claim 31, wherein the lead frame has a second mounting surface opposite the first mounting surface, and wherein the molded body is formed to the lead frame such that the second mounting surface remains free of material of the molded body.

40. An optoelectronic semiconductor component comprising: a lead frame having a first mounting surface; a semiconductor chip arranged on the first mounting surface and having an emission surface; an optical element; and a molded body, wherein the optical element has an input-coupling surface oriented transverse to the first mounting surface, wherein the semiconductor chip is configured to emit electromagnetic radiation through the emission surface, a radiation axis of which being parallel to the first mounting surface, wherein the optical element is configured to deflect the radiation of the semiconductor chip coupled in via the input-coupling surface, wherein the molded body is arranged at the lead frame and has an alignment surface transverse to the first mounting surface, wherein the optical element and the alignment surface are in direct contact with each other, and wherein the optical element is in direct contact with the emission surface, or wherein the optical element is in direct contact with the first mounting surface and a radiation-transmissive encapsulation compound is arranged between the emission surface and the optical element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Further advantages and advantageous designs and further embodiments of the optoelectronic semiconductor component result from the following exemplary embodiments described in connection with the figures.

[0059] FIGS. 1A to 1E show perspective schematic illustrations of an optoelectronic semiconductor component described herein according to a first exemplary embodiment at various intermediate stages during a process for its production;

[0060] FIG. 2 shows a perspective schematic view of a section of an optoelectronic semiconductor component described herein according to a second exemplary embodiment;

[0061] FIG. 3 shows a perspective schematic sectional view of an optoelectronic semiconductor component described herein according to a third exemplary embodiment; and

[0062] FIG. 4 shows schematic view of a plurality of optoelectronic semiconductor components described herein according to the first exemplary embodiment in a wafer composite.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0063] Elements that are identical, similar or have the same effect are given the same reference signs in the figures. The figures and the proportions of the elements shown in the figures are not to be regarded as true to scale. Rather, individual elements may be shown exaggeratedly large for better representability and/or for better comprehensibility.

[0064] FIG. 1A shows a schematic representation of an optoelectronic semiconductor component 1 described herein according to a first exemplary embodiment in a first stage of the process for its production.

[0065] The optoelectronic semiconductor component 1 comprises a lead frame 20 with a first mounting surface 20A, which is partially surrounded by a molded body 40 in such a way that the mounting surface 20A and an adjacent bonding surface 20C, for example for electrical connection wires 80 (see FIG. 1C), are exposed. The lead frame 20 is provided, for example, by a stamping process. The molded body 40 includes an alignment surface 40A and laterally completely surrounds the lead frame 20.

[0066] The molded body 40 is formed on the lead frame 20 such that the alignment surface is formed transverse to the first mounting surface. A cavity 41 is formed in the molded body 40, which completely penetrates the molded body 40 and extends to the first mounting surface 20A and bonding surface 20C.

[0067] For example, the molded body 40 is transfer molded to the lead frame 20. Any residues or remnants of the molded body 40 have already been removed from the first mounting surface 20A and from the bonding surface 20C by means of a chemical and/or mechanical cleaning step.

[0068] FIG. 1B shows the first exemplary embodiment in a second stage of a method for producing the same. Here, a semiconductor chip 10 having a carrier body 70 is mounted in the cavity 41 on the first mounting surface 20A of the lead frame 20. The carrier body 70 is attached to the mounting surface 20A of the lead frame 20 by soldering, sintering, or bonding. Further, a protective diode 11 is disposed on the carrier body 70 adjacent to the semiconductor chip 10. For example, the protective diode 11 serves to protect the semiconductor chip 10 from damage caused by electrostatic discharge.

[0069] FIG. 1C shows the first exemplary embodiment in a third stage of a method for its production. Here, a plurality of bonding wires 80 are provided via which the semiconductor chip 10, the carrier body 70 and the protective diode 11 are electrically conductively connected to the lead frame 20. The bonding wires 80 are formed with gold, for example.

[0070] FIG. 1D shows the first exemplary embodiment in a fourth stage of a method for its production. Here, an optical element 30 is mounted in the cavity 41 of the molded body 40. The optical element 30 is a deflection prism inserted into the cavity 41 along an alignment surface 40A of the molded body 40. A side surface of the cavity 41 is formed as the alignment surface 40A. Thus, the alignment surface 40A can be made particularly stable and advantageously simple.

[0071] The optical element 30 includes a side surface 30C that rests directly on the alignment surface 40A of the molded body 40. Thus, alignment of the optical element 30 relative to the molded body 40, and thus also to the semiconductor chip 10, was performed using the alignment surface 40A. The optical element 30 includes an input-coupling surface 30A, which is aligned such that electromagnetic radiation from the semiconductor chip 10 exiting via the emission surface 10A is coupled therethrough into the optical element. Further, the optical element 30 includes an output-coupling surface 30B through which a majority of the electromagnetic radiation exits the optical element 30.

[0072] In the sectional view shown in FIG. 1D, it can be clearly seen that the lead frame 20 has a second mounting surface 20B opposite the first mounting surface 20A, which is free of the material of the molded body 40. Advantageously, this enables surface mounting of the optoelectronic semiconductor component 1 via the second mounting surface 20B of the lead frame 20.

[0073] In the first exemplary embodiment, the optical element 30 is in direct contact with the alignment surface 40A and the first mounting surface 20A of the lead frame 20. Thus, the optical element 30 is not in contact with the emission surface 10A of the semiconductor chip 10. This is particularly advantageous when the semiconductor chip 10 has an emission surface 10A that is sensitive to mechanical contact.

[0074] FIG. 1E shows the first exemplary embodiment in a fifth stage of a method for its production. Here, a potting compound 60 is filled into the cavity 41 of the molded body 40. Preferably, the filling with the potting compound 60 is done by jetting or dispensing. The potting compound 60 is flush with the front side of the molded body 40 and the output-coupling surface 30B of the optical element 30. Advantageously, this results in a flat surface of the optoelectronic semiconductor component 1, which simplifies a subsequent arrangement of further optical elements. The output-coupling surface 30B of the optical element 30 is free of the material of the potting compound 60.

[0075] The potting compound 60 is impermeable to radiation and formed, for example, with an epoxy material provided with reflective or absorbent filler. As a result, an escape of electromagnetic radiation is advantageously limited to the output-coupling surface 30B of the optical element 30. Thus, an undesired lateral leakage of scattered radiation is avoided. Furthermore, the potting compound 60 leads to an additional mechanical stabilization of the optical element 30 and also protects the semiconductor chip 10 from external environmental influences.

[0076] The second exemplary embodiment shown in FIG. 2 is substantially the same as the first exemplary embodiment. It differs from the first exemplary embodiment, in particular, in that an encapsulation compound 50 is provided between the emission surface 10A of the semiconductor chip 10 and the optical element 30. The encapsulation compound 50 is formed with a highly transparent radiation-permeable material. Preferably, the encapsulation compound is formed with a silicone.

[0077] The encapsulation compound 50 protects both the emission surface 10A of the semiconductor chip 10 and the input-coupling surface 30A of the optical element 30 from external environmental influences. For example, the encapsulation compound 50 is formed such that its refractive index is formed between the refractive index of the optical element 30 and the refractive index of the semiconductor chip 10. For example, the optical element is formed with glass and has a refractive index of 1.4. The semiconductor chip is formed with silicon or GaAs, for example, and has a refractive index between 3.6 and 3.9.

[0078] Consequently, a gradual transition from the refractive index of the semiconductor chip 10 to the refractive index of the optical element 30 is achieved. A refractive index jump between the semiconductor chip 10 and the optical element 30 is advantageously reduced and better optical coupling into the optical element is achievable.

[0079] Further, the optical element 30 includes lateral mounting surfaces 30D. The lateral mounting surfaces 30D are parallel to each other and oriented perpendicular to the input-coupling surface 30A and the output-coupling surface 30B, respectively. For example, an adhesive is disposed between the potting compound 60 and the lateral mounting surfaces 30D to improve mechanical stabilization.

[0080] The third exemplary embodiment shown in FIG. 3 is substantially the same as the first exemplary embodiment. It differs from the first exemplary embodiment in particular in that the input-coupling surface 30A of the optical element 30 is in direct contact with the emission surface 10A, at least in places, and forms a direct passage with the semiconductor chip 10.

[0081] Here, the optical element 30 is thus in direct contact with the alignment surface 40A of the molded body 40 and the emission surface 10A of the semiconductor chip 10 via its side surface 30C. In particular, the optical element 30 is designed in such a way that it does not touch the first mounting surface 20A of the lead frame 20. Thus, the optical element 30 is automatically adjusted to a zero distance between its input-coupling surface 30A and the emission surface 10A of the semiconductor chip 10. Advantageously, a disturbing air gap between the emission surface 10A of the semiconductor chip 10 and the input-coupling surface 30A of the optical element 30 is thus reduced or avoided.

[0082] FIG. 4 shows a schematic view of a plurality of optoelectronic semiconductor components 1 described herein according to the first exemplary embodiment in a wafer compound. The plurality of semiconductor components 1 are arranged in a uniform grid. Along the saw lines shown with dashed lines in FIG. 4, the optoelectronic semiconductor components 1 are subsequently separated by means of a sawing process or a laser separation process. Preferably, a plurality of optoelectronic semiconductor components 1 is produced simultaneously in a particularly simple manner.

[0083] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any new feature as well as any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or embodiments.