METHOD FOR ELECTRONICALLY CONFIGURABLE VARIABLE APERTURE AND GRATING
20200209666 ยท 2020-07-02
Inventors
Cpc classification
G02F1/137
PHYSICS
G02F1/13439
PHYSICS
G02F1/13306
PHYSICS
International classification
G02F1/133
PHYSICS
G02F1/137
PHYSICS
Abstract
Provided are devices and methods capable of electronically controlling and varying aperture diameters or diffracting light. The method provides a solid-state device made up of a transparent bottom electrode (TBE), a layer of liquid crystal (LC) material overlying the TBE, and a field of selectively engageable transparent top electrodes (TTEs). Light incident to the TTEs is accepted and a voltage differential between one or more selected TTEs and the TBE. As a result, an optically transparent region is created in the LC material interposed between the selected TTEs and the TBE. Depending on the arrangement of the TTEs and their size respective to the wavelength of the incident light, the light is either transmitted through an aperture or diffracted.
Claims
1-17. (canceled)
18. A method for varying the size of an optical aperture, the method comprising: providing a solid-state aperture comprising a transparent bottom electrode (TBE), a layer of liquid crystal (LC) material overlying the TBE, and a field of selectively employable transparent top electrodes (TTEs) concentrically aligned around an optically transparent aperture center and formed overlying the LC layer; accepting light incident to the TTEs; applying a voltage differential between a selected TTE and the TBE; creating an optically transparent region in the LC material interposed between the selected TTE and the TBE, where regions of the LC material underlying unemployed TTEs are optically occlusive; and, transmitting the light through the aperture.
19. The method of claim 18 wherein the TTEs are referenced, in a direction outward from the aperture center, as a1 and a2, wherein applying the voltage differential includes applying the voltage differential to TTE a1 at a first time; wherein creating the optically transparent region includes creating a first optically transparent region in the LC material with a cross-section d1 across the aperture center, during the first time; wherein applying the voltage differential includes applying the voltage differential to TTEs a1 and a2 at a second time subsequent to the first time; and, wherein creating the optically transparent region includes creating a second optically transparent region in the LC material during the second time with a cross-section d2 across the aperture center, where d2>d1.
20. The method of claim 19 creating the second optically transparent region in the LC material with a cross-section d2 includes creating the second optical region within 0.1 seconds, or less, from a start of the second time.
21. The method of claim 18 wherein the TTEs have a width (w) and are separated from concentrically adjacent TTEs by a space (s), where wabout 1000 nanometers (nm) and s is less than about 380 nm and, wherein accepting the light incident to the TTEs includes accepting light having a wavelength in the range between about 380 and 780 nm.
22. A method for variably diffracting light using a solid-state diffraction grating, the method comprising: providing a solid-state diffraction grating comprising a transparent conducting bottom electrode (TBE) with a front surface, a layer of liquid crystal (LC) material overlying the TBE front surface, and a field of selectively employable serially aligned transparent top electrodes (TTEs) formed overlying the LC layer; accepting light incident to the TTEs; applying a voltage differential between a selected TTE and the TBE; creating an optically transparent region in the LC material interposed between the selected TTE and the TBE, where regions of LC material underlying unemployed TTEs are optically occlusive; and, transmitting a pattern of diffracted light through the diffraction grating.
23. The method of claim 22 wherein applying the voltage differential includes applying the voltage differential to a first set of TTEs at a first time; wherein transmitting the pattern of diffracted light includes creating a first diffraction pattern of light during the first time; wherein applying the voltage differential includes applying the voltage differential to a second set of TTEs at a second time; and, wherein transmitting the pattern of diffracted light includes creating a second diffraction pattern of light, different than the first diffraction pattern, during the second time.
24. The method of claim 22 wherein applying the voltage differential includes applying the voltage differential to a first set of TTEs at a first time; wherein creating the optically transparent region in the LC material includes creating a first field of periodically aligned optically transparent regions during the first time having a width (t1) and periodically aligned occlusions having a width (o1) between adjacent transparent regions; wherein applying the voltage differential includes applying the voltage differential to a second set of TTEs at a second time subsequent to the first time; and, wherein creating the optically transparent region in the LC material includes creating a second field of periodically aligned optically transparent regions during the second time having a width (t2), different than t1, and periodically aligned occlusion having a width (o2) between adjacent transparent regions, different than o1.
25. The method of claim 24 creating the second field of optically transparent second regions includes creating the second field within 0.1 seconds, or less, from a start of the second time.
26. The method of claim 22 wherein applying the voltage differential includes applying the voltage differential to a first set of TTEs at a first time; wherein transmitting the pattern of diffracted light includes steering a beam of light at a first angle 1, with respect to a first mode, during the first time; wherein applying the voltage differential includes applying the voltage differential to a second set of TTEs at a second time; and, wherein transmitting the pattern of diffracted light includes steering the beam of light at a second angle 2, different than the first angle 1, with respect to the first mode, during the second time.
27. The method of claim 22 further comprising: measuring diffracted light minima and maxima on an image sensor; and, the image sensor supplying diffracted light measurement signals.
28. The method of claim 18 wherein providing the solid state aperture comprising the field of selectively employable TTEs concentrically aligned around an optically transparent aperture center includes providing an aperture where the inner-most concentrically aligned TTE includes the aperture center.
29. The method of claim 18 wherein providing the solid-state aperture comprising the field of selectively employable TTEs includes the TTEs having a width (w) and a separation from adjacent TTEs by a space (s), where w4 s.
30. The method of claim 18 wherein providing the solid-state aperture further includes providing transparent conductive voltage supply traces respectively connected to the TTEs.
31. The method of claim 30 wherein providing the solid-state aperture further includes providing a controller having an input to accept TTE enablement signals and outputs connected to the transparent conductive voltage supply traces; and, wherein applying the voltage differential between the selected TBE and the TBE includes the controller selectively enabling TTEs in response to the enablement signals.
32. The method of claim 18 providing the solid-state aperture comprising TTEs concentrically aligned around an optically transparent aperture center includes providing TTEs as concentrically aligned rings.
33. The method of claim 23 wherein the first diffraction pattern of light is a first field of periodically aligned optically transparent regions; and, wherein the second diffraction pattern of light is a second field of periodically aligned optically transparent regions.
34. The method of claim 22 wherein applying the voltage differential includes applying the voltage differential to a first set of TTEs at a first time; wherein creating the optically transparent region in the LC material includes creating a first field of periodically aligned optically transparent regions during the first time having a width (t1) and periodically aligned occlusions having a width (o1) between adjacent transparent regions; wherein applying the voltage differential includes applying the voltage differential to a second set of TTEs at a second time subsequent to the first time; and, wherein creating the optically transparent region in the LC material includes creating a third field of periodically aligned optically transparent regions during the second time having the width t1, and periodically aligned occlusion having a width (o3) between adjacent transparent regions, different than o1.
35. The method of claim 22 wherein providing the solid state diffraction grating includes providing TTEs having a width (w) greater than about 380 nm.
36. The method of claim 22 wherein providing the solid state diffraction grating includes providing TTEs aligned in an arrangement selected from the group consisting of parallel lines and concentric rings.
37. The method of claim 22 wherein providing the solid state diffraction grating further includes providing a controller having an input to accept TTE enablement signals and outputs connected to the TTEs; and, wherein applying the voltage differential between the selected TBE and the TBE includes the controller selectively enabling TTEs in response to the enablement signals.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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[0039]
DETAILED DESCRIPTION
[0040] As noted in the Background Section above, the trial-and-error process of finding the optimal pinhole diameter for different camera systems is both costly and time consuming. This trial-and-error experimentation exposes the need for an easier way of adjusting a pinhole diameter on demand, which in turn suggests many new potential applications for a non-mechanical variable aperture. Liquid crystal display (LCD) technology is used in the solid-state aperture device described herein to electronically control the pinhole diameter. With this capability, the charge-coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) camera system, typically used for fingerprint recognition in a smartphone, can be used like the pupil of a human eye, which adjusts its diameter with the light intensity, and it can be used for many other applications like in micro-photography and even microscopy in a smartphone.
[0041] Instead of having a large number of preformed pinhole diameters, or an array of pinholes, built on, for example, the Gorilla glass cover of a smartphone, the single pinhole diameter is electronically controlled in the solid-state aperture device described herein. Thus, determining the appropriate pinhole diameter for the any kind of smartphone optical system is easily achievable. If properly calculated, the variable diameter pinhole makes any experimental procedure much easier, and also open the way for a wide variety of applications possible involving electronically controlled aperture camera applications.
[0042]
Aperture
[0043]
[0044] In the example depicted n=5, but generally the aperture is not limited to any particular number of TTEs. Typically, the TTEs and TBE are made from ITO, but potentially they can be made from other types of transparent conductive oxides (TCOs), as would be known by those with skill in the art. As noted above in the explanation of
[0045] The application of the voltage differential to TTE 304-1 creates an optically transparent region in the LC material 303 with a cross-section d1 across the aperture center. The application of the voltage differential to TTEs 304-1 and 304-2 creates an optically transparent region in the LC material 303 with a cross-section d2 around the aperture center, where d2>d1. As shown, the TTEs are concentrically aligned rings, in which case cross-sections d1 and d2 may be more accurately understood to be diameters. Although the TTEs are depicted as circular rings, in other aspect the TTEs may be formed in the shape of rectangles, lines, ovals, other concentric geometric shapes for the purpose light diffraction or other special optical effects.
[0046] For visible light applications, the TTEs may have a width (w) 308 and are separated from adjacent TTEs by a space (s) 310, where wabout 1000 nanometers (nm) and s is less than about 380 nm. That is, d1 need not be equal to w, and any difference between these two values affects the degree and resolution of light transmission. The space (s) between TTEs may potentially occlude incident light since it is not covered by a TTE. Although not depicted as such, the TTE width (w) is typically much greater the spacing (s), e.g., w4 s. Depending upon factors such as the applied voltage differential, and thus the electric field in the LC material, the LC material adjacent to enabled TTEs may likewise be subject to the neighboring electric field in the LC material underlying the enabled TTE. Thus, the occluding effect of spacing s may be even further limited. Likewise, the cross-sectional dimension of the aperture center 306 is significantly smaller than the width of TTE 304-1 so as to optically insignificant, or as above, the occluding effect of the LC material underlying the aperture center may be further limited due to the electric field in the LC material underlying TTE 304-1. In one aspect, such as shown in
[0047] Although the TTE widths (w) 308 are depicted as uniform in size, it should be understood that each TTE may have a unique width. Likewise, although the width of spacings (s) 310 is depicted as uniform, it should be understood that each particular spacing between TTEs may have a unique width.
[0048] Generally, for any application where interference or the wave property of the light or electromagnetic radiation is not desired, and the spectrum of interest wavelengths are between .sub.MIN and .sub.MAX, the space (s) between the TTEs should be less than or equal to .sub.MIN and the practical TTE widths should be w>>s (e.g., w4 s). On the other hand, for spectroscopy/grating applications, discussed in detail below, the generation of interference patterns on an image plane is desired, to measure the distances between the intensity maximums and minimums as well as their angle of diffraction with respect to a transparent or reflective grating as given in well-known diffraction equations. Therefore, the periodic grating structure should be in the order of wavelengths, but not smaller than the .sub.MIN. Since ITO is likely to be the most practical transparent electrode material, the limits on the wand s are basically set by the etching limits of ITO and somewhat the thickness of the LC.
[0049] As shown, transparent conductive voltage supply traces 312-1 through 312-n are respectively connected to the TTEs 304-1 through 304-n. A controller 314 has an input on line 316 to accept TTE enablement signals and outputs connected to transparent conductive voltage supply traces 312-1 through 3012-n, to selectively enable TTEs in response to the enablement signals. Although not explicitly shown, in some aspects to controller may be connected to selectively apply voltages changes to the TBE, as described in the explanation of
[0050]
[0051] Applying a voltage to the concentric rings with respect to the ground-plane, an electrical field is produced between the rings and the ground-plane where the liquid crystal is sandwiched. This electrical field orients the liquid crystals along z axes (looking into the sheet), which makes the two-electrode capacitor structure transparent to light.
[0052]
[0053] The pinhole diameter or aperture diameter is controlled by applying the proper voltages to each TTE, thus controlling the optical properties like focal depth f.sub.D and fingerprint capture area d.sub.VIEW registered on the optical sensor as explained in USPTO application [1].
[0054] Typically, LCD aperture control for a camera operating in the visible range has spacings (s) between the TTEs on the order of 380 nm or less, which is the lower bound of the visible spectrum given as 380780 nm. This is the smallest geometry in the system and since this spacing between TTEs is opaque to the visible spectrum there is no need for making it any smaller in this application. If the spacing s is larger than 500 nm for example, light with a shorter wavelength than 500 nm passes through and can create interference patterns on the imaging plane, or the lower bound of the brightness control may be compromised when all the TTEs are activated.
[0055] The TTE width can be any value larger than 780 nm and basically determines the resolution of the aperture control. To have meaningful and practical aperture control, the TTE width w must be larger than the space s between the TTEs, which can be formulated as,
w>>s,s.sub.MIN(4)
[0056] As an example, the system shown in
[0057] If an aperture control in the 1 mm-100 mm range is desired for an expansive photography lens system, using the powers of 2 number of rings rule yields 256 equally spaced and equal width rings of roughly 390. This value becomes smaller than the minimum width of 780 nm that was set earlier and is a good example of an overkill design. Having 128 or even 64 equally spaced rings, or using unequal widths in the concentric rings gives a more practical aperture control.
[0058] One shortcoming of placing an LCD in front of the camera system is the loss of light intensity that it brings to the optics. The transparency of a regular LCD is in the order of 15%, which is a relatively low number. If greater transparency is needed, then the LCD display can be replaced with the commonly known high transparency LCD which can increase the transparency to 45% range.
[0059] There is no need to limit the solid-state variable aperture described herein to only pinhole camera applications, as it can be extended to any camera systems. In a professional camera there are controls for adjusting the light intensity coming to the film or CCD/CMOS imager, as well as controls for focus and shutter speed, which are done either automatically or manually. The light intensity control is done through control of the aperture diameter. Aperture diameter can also control the depth of view, which adds art or photographers touch to the photograph, and so is a highly desirable feature in professional photography. However, conventional aperture diameter control in a camera requires highly sophisticated fine mechanics, which are too large to fit in a smartphone. Smartphones today have an image quality, number of pixels, and speed of operation very close to professional cameras, but they always lack the aperture control feature due to the need for mechanical aperture components that cannot fit in smartphone thicknesses in the 5 mm range.
[0060] The solid-state variable aperture device has a diameter control capability in the range from the full diameter of a lens to micron sized pinhole diameters, in the increments of microns if desired. This is a capability which cannot be achieved by any mechanical aperture control system today. In addition, the use of LCD technology permits very fast aperture control, on the order of 0.01-0.1 seconds, which is not achievable by mechanical aperture controls in use today. The system uses a very small amount of electrical power and has no moving parts, which is an advantage compared to bulky mechanical aperture control systems.
Diffraction Grating
[0061]
[0062] Similar diffraction patterns can be generated by the double slit structure as shown in
[0063] Diffraction pattern technique has many uses in physics from simple wave length calculations, to any type of spectroscopy like X-Ray spectroscopy to study crystal structures, to Infra-Red spectroscopy, chromatography to analyze chemical composition of an unknown substance in pharmacology, criminology, and chemistry. Any spectral analysis requires the power spectrum analysis of an electromagnetic radiation. In other words, the power intensity as function of wavelength is needed in any given spectrum of interest. Therefore, accurate wavelength measurement is a must.
[0064] Instead of drawing non-transparent lines on a transparent substrate in a periodic manner, as is conventional, the solid-state diffraction grating presented herein uses an LCD structure to generate an electronically configurable grating structure, where the period of the grating can be changed on the fly.
[0065]
[0066] In one aspect, an image sensor 710 underlies the back surface 712 of the TBE 702. Typically, the image sensor is a charge-couple device (CCD) or complementary metal-oxide-semiconductor (CMOS) device. However, the diffraction system is not limited to any particular type of image sensor. As explained in more detail below, the image sensor is for the purpose of measuring light intensity minima and maxima. The image sensor 710 has an output on line 713 to supply diffraction measurement signals indicative of incident light minima and maxima on the image sensor, as described in greater detail in the explanation of
[0067] In the typical form of the diffraction grating 700, the TTEs are aligned as parallel lines. However, in other aspects, the TTEs may be formed as concentric rings. The aperture device shown in
[0068]
[0069] In another example, the voltage differential is applied to a second set of TTEs, e.g., 708-3, 708-4, 708-7, and 708-8, and creates an optically transparent second periodic grating d2 in the LC material (FIG. 8B). That is, the application of the voltage differential to a second set of TTEs creates a second field of periodically aligned optically transparent regions having a width (t2), different than the t1 width, and periodically aligned occlusions having a width (o2) between adjacent transparent regions, different than occlusion width o1. Similarly,
[0070] In another variation, as shown in
[0071] The change in the period of the grating changes the angle where the destructive interference occurs, as shown in
[0072] The refractive index as a function is inversely proportional to the wavelength. The earliest refraction index formula as a function of wavelength is given by Cauchy in 1836. It is an empirical formula with three parameters and is given as,
[0073] More accurately, the well-known and widely used empirical Sellmeier equation, published by Wolfgang Sellmeier in 1871 is given as,
[0074] Where n, m, A.sub.i, i and is refractive index, Sellmeier order of approximation, like 1, 2, 3 . . . , Sellmeier coefficients, Sellmeier wavelengths, and wavelength. Typically, the suppliers of glass or fiber provide a three term Sellmeier formula (m=3) with 6 parameters that characterizes the refractive index of their products as a function over a wide interval of wavelengths.
[0075]
[0076] The easiest way of formulating the diffraction phenomena in general is by the single slit experiment. Assume that there is a gap a that is on the order of the wavelength of a mono chromatic light that is subject to the experiment. The diffraction pattern seen on the screen has periodic dark and lit patterns due to the wave nature of the light first observed by Huygens in 1678. In 1807 Thomas Young published the double slit experiment. Later the diffraction theory was extended by Augustine Jean Fresnel in 1818 in which he explained many diffraction experiments such as the Arago spot, which is also known as the Poisson spot or Fresnel Bright spot. The Kirchhoff diffraction formula provides a rigorous mathematical foundation for any diffraction experiments based on Maxwell's wave equation. G. I., Taylor, Fraunhofer, Airy, and Lord Raleigh were among other famous scientists which dealt with diffraction phenomena. Although the theory of diffraction is simple and can be explained by constructive and destructive interference, it can lead to complicated mathematical formulation for quantifying general cases. The intensity minima on the screen shown in
a Sin()=m(7)
Where m, , a, are the order of each minimum, wavelength, distance between slits or gap in a single slit, and the angle at which destructive interference occurs, known as deviation angle as shown in
Where is the total phase angle, which is related to the deviation angle as,
[0077]
[0078] Using relation (10) for the grating structure shown in
d[Sin()+Sin()]=m(11)
[0079] Where m is integer and d is the period of the grating shown in
d Sin()=m(12)
Solving from (11) gives,
[0080] A given direction transmits a variety of wavelengths related by integral fractional multiples, and a given wavelength can appear in many directions. As can be seen in (13) and all the formulations given, the period of the grating d, determines the diffraction pattern. In the solid-state diffraction grating, the slit or the grating geometry is controlled by LCD technology, which is electronically controllable and adjustable for spectroscopy and beam steering applications.
[0081]
[0082]
[0083] For a d diffraction grating value set in the LCD transparent diffractive element, the angle is calculated by solving (12) for different integer m values. Since the distance between the LCD transparent diffraction grating and the CCD/CMOS y.sub.CCD is known, the diffraction pattern maximums and minimums x coordinates can be calculated, thus performing spectral analysis of an electromagnetic radiation shining on the transmissive diffraction grating. The opposite approach is the actual way of performing a spectral analysis using the solid-state diffraction grating described herein. The CCD/CMOS imager captures the diffraction intensity pattern of the light spectrum shining on the LCD transparent diffractive element. In other words, the diffraction intensity pattern y.sub.CCD=f(x) is known and its angle function (13) can be calculated by simple trigonometry applied to
x.sub.CCD=y.sub.CCD.Math.tg(.sub.1)(14)
Solving .sub.1 which corresponds to m=+1 or m=1 gives,
Solving the wavelength by substituting .sub.1 in (12) gives,
=d Sin(.sub.1)(16)
[0084] Since d is the grating period and it is known, the wavelength corresponding to that maximum on the CCD or CMOS imager can be calculated. In other words; the known periodic structure of the CCD/CMOS imager is used as an electronic ruler with a 0.8-3 micron resolution to measure the light intensity versus x on the image plane. Dividing the x value to the known distance between the CCD/CMOS surface and diffraction grating and getting its inverse tangent as in relation (15) gives the angle, which gives the wavelength corresponding to the intensity with the relation (16). Since any high-resolution CCD/CMOS imager has pixels exactly a known distance apart, the resolution of x.sub.CCD is very small and precise, resulting in very precise spectrum analysis.
[0085] Imager technology is rapidly changing to increase the pixel count and for enhancement at low level lighting conditions, especially for the smartphone market. At the time of this writing a typical 16 Mega Pixel smartphone camera may have 53122988 pixels with a 1.21.2 and a 12-bit Red-Green-Blue (RGB) resolution. A 13 Mega Pixel CMOS camera may have 42243136 pixels, with pixel sizes of 1.21.2, and a 10 bit RGB resolution, with a 30 frame per second rate of image transfer rate. Other CMOS imagers have 23.4 Mega Pixels with pixel sizes of 1.121.12.
[0086]
The solution of (17) for m0 is possible if,
[0087] In other words, any m value giving /d value larger than 1 is not possible. 1,500 nm width/spacing gives grating orders m=1, 0, +1 as the possible solutions of (12). On the other hand, 3,000 nm width/spacing gives m=3, 2, 1, 0, 1, 2, 3 as the possible solutions of (12).
[0088]
[0089]
[0090]
[0091]
[0092] Step 1302 provides a solid-state aperture as described in detail above. The aperture comprises a transparent bottom electrode (TBE), a layer of liquid crystal (LC) material overlying the TBE, and a field of selectively engageable transparent top electrodes (TTEs) concentrically aligned around an optically transparent aperture center and formed overlying the LC layer. Step 1304 accepts light incident to the TTEs and Step 1306 applies a voltage differential between a selected TTE and the TBE. Step 1308 creates an optically transparent region in the LC material interposed between the selected TTE and the TBE, and in Step 1310 light is transmitted through the aperture.
[0093] With respect to Step 1302, the TTEs are referenced, in a direction outward from the aperture center, as a1 and a2. Referencing
[0094] For visible light applications, Step 1302 provides TTEs having a width (w), separated from concentrically adjacent TTEs by a space (s), where wabout 1000 nanometers (nm) and s is less than about 380 nm. Then, Step 1304 accepts incident light having a wavelength in the range between about 380 and 780 nm.
[0095]
[0096] In one example, Step 1406 applies the voltage differential to a first set of TTEs (e.g.,
[0097] Alternatively stated, when Step 1406 applies the voltage differential to a first set of TTEs at a first time, Step 1408 creates a first field of periodically aligned optically transparent regions having a width (t1) and periodically aligned occlusions with the width (o1) between adjacent transparent regions. Likewise, when Step 1406 applies the voltage differential to a second set of TTEs at a second time (subsequent to the first time), Step 1408 creates a second field of periodically aligned optically transparent regions having a width (t2), different than width t1, and periodically aligned occlusions having a width (o2) between adjacent transparent regions, different than the o1 spacing. In one aspect, Step 1408 creates the second field within 0.1 seconds, or less, from the second time.
[0098] In one aspect, Step 1406 applies the voltage differential to a first set of TTEs, and Step 1410 steers a beam of light at a first angle 1, with respect to a first mode. When Step 1406 applies the voltage differential to a second set of TTEs, Step 1410 steers the beam of light at a second angle 2, different than the first angle 1, with respect to the first mode. The beam steering capabilities of the diffraction grating are described in detail in the explanation of
[0099] In one aspect, Step 1412 measures diffracted light minima and maxima on an image sensor and Step 1414 supplies diffracted light measurement signals.
[0100] Solid-state variable aperture and diffraction devices have been provided as well as methods for their use. Examples of particular materials and circuit geometries have been presented to illustrate the invention. However, the invention is not limited to merely these examples. Other variations and embodiments of the invention will occur to those skilled in the art.
REFERENCES
[0101] 1. Electronic Device and Method for Non-Contact Capacitive and Optical Pin Hole Fingerprint Detection, Osman Ersed Akcasu, USPTO application number U.S. Ser. No. 16/057,677, Aug. 7, 2018. [0102] 2. Lord Rayleigh on Pin hole Photography, John W. Strutt Lord Rayleigh, Philosophical Magazine, Vol. 31, 1891, pp. 87-99. [0103] 3. Pinhole Optics, M. Young, Applied Optics, Vol. 10, pp. 2763-2767. [0104] 4. https://en.wikipedia.org/wiki/Pinhole_camera. [0105] 5. Engineering Electromagnetic Fields and Waves, Carl T. A. Johnk, John Willey & Sons, Copyright 1975, ISBN 0-471-44289-5. [0106] 6. Elements of Electromagnetics, Matthew N. O. Sadiku, Oxford University Press, Copyright 2001 Third Edition, 2001, ISBN 0-19-513477-X. [0107] 7. The Feynman Lectures on Physics, Richard P. Feynman, Robert B. Leighton, Matthew L. and Sands, Copyright 1963, 1989 California Institute of Technology, ISBN 0-201-51003-0. [0108] 8. Electronic Display Devices, John Willey & Sons, ISBN 0 471 92218 8 [0109] 9. Finger Print Sensing Techniques, Hsu Wen-Hsing, Sep. 7, 2007, www.ee.nthu.edu.tw/whhsu/96up/01%20Fingerprint%20sensing%20techniques.ppt [0110] 10. https://info.photomodeler.com/blog/kb/what_is_camera_focal_length/ [0111] 11. https://petapixel.com/2017/06/16/smartphone-camerasimproved-time/inventor: [0112] 12. https://www.androidauthority.com/smartphone-camera-guide-sony-samsung-623791/