LOGIC POWER MODULE WITH A THICK-FILM PASTE MEDIATED SUBSTRATE BONDED WITH METAL OR METAL HYBRID FOILS

20200199029 ยท 2020-06-25

Assignee

Inventors

Cpc classification

International classification

Abstract

One aspect is a logic power module, with at least one logic component, at least one power component and a substrate. The logic element and the power component are provided in separate areas on the substrate. The logic component on the substrate is provided by thick printed copper; and the power component is provided by a metal-containing thick-film layer, and, provided thereon, a metal foil.

Claims

1-17. (canceled)

18. A logic power module, comprising: at least one logic component; at least one power component; and a ceramic substrate; wherein the logic component and the power component are provided in separate areas on the ceramic substrate; wherein the logic component on the substrate comprises thick printed electroconductive metal paste; and wherein the power component comprises a metal-containing thick-film layer, and, provided thereon, a metal foil.

19. The logic power module according to claim 18, wherein the thick-film paste is sintered, prior to bonding of the metal foil to the ceramic substrate, by a temperature of below 1025 C.

20. The logic power module according to claim 18, wherein the thick-film layer constituting the power component is prepared from a thick-film paste.

21. The logic power module according to claim 18, wherein the power component is provided by a continuous application of the thick-film paste on the ceramic substrate and a continuous application of the metal foil on the thick-film-paste.

22. The logic power module according to claim 18, wherein the power component is provided by a discontinuous application of the thick-film paste on the ceramic substrate and a continuous application of the metal foil on the thick-film-paste.

23. The logic power module according to claim 18, wherein in the power component the thick-film layer is formed by a thick-film paste which is coated onto the metal foil or the substrate by screen printing.

24. The logic power module according to claim 18, wherein in the power component the metal foil and/or the thick-film layer is oxidized before bonding to the substrate.

25. The logic power module according to claim 18, wherein in the power component the thick-film paste is applied onto the substrate or metal foil by multilayer printing.

26. The logic power module according to claim 18, wherein the ceramic substrate is an alumina ceramic (AI2O.sub.3), an aluminum nitride ceramic (AIN), a zirconia toughened alumina ceramic (ZTA), a beryllia oxide ceramic (BeO) or a S13N4 ceramic.

27. The logic power module according to claim 18, wherein the thick printed electroconductive metal paste of the logic component has the same composition as the metal-containing thick-film paste of the power component.

28. A process for preparing a logic power module, comprising at least one logic component, at least one power component and a ceramic substrate, whereby the logic component and the power component are provided in separate areas on the ceramic substrate, wherein the logic component on the ceramic substrate is prepared by screen printing, stenciling and/or direct deposition of thick printed copper; and the power component on the ceramic substrate is prepared by a process comprising: applying a thick-film paste onto the ceramic substrate; applying a metal foil onto the thick-film layer of the ceramic substrate; and bonding the metal foil with the ceramic substrate via the thick-film layer, or applying a thick-film paste onto a metal foil; applying the ceramic substrate onto the thick-film layer of the metal foil; and bonding the metal foil with the ceramic substrate via the thick-film layer.

29. The process according to claim 28, wherein the thick-film paste is sintered, prior to bonding of the metal foil to the ceramic substrate, by a temperature of below 1025 C.

30. The process according to claim 28, wherein the thick-film paste of the power component is coated onto the metal foil or the ceramic substrate by screen printing.

31. The process according to claim28, wherein the metal foil and/or the thick-film layer of the power component is oxidized before bonding to the ceramic substrate.

32. The process according to claim 28, wherein the thick- film paste of the power component is applied onto the ceramic substrate or onto the metal foil by multilayer printing.

33. A power logic module prepared according to the method of claim 28.

34. Use of a power logic module according to claim 18 in power electronic circuits.

Description

[0130] Example Section

[0131] The present invention is described in more detail with regard to the following examples:

[0132] A thick-film paste material is prepared starting from the following glass composition (in wt.-%):

TABLE-US-00001 d.sub.50 Tg Glass (m) (DSC, C.) SiO.sub.2 ZnO B.sub.2O.sub.3 Al.sub.2O.sub.3 TiO.sub.2 CaO K.sub.2O MgO Na.sub.2O ZrO.sub.2 Li.sub.2O A 2.6 744 38 0.2 3.9 19.5 2.4 35.9 0.1 0 0 0.1 0 B 3.6 677 27.3 3.9 10.5 24.7 3.5 25.9 0 3.21 0.8 0 0 C 2.8 584.6 61.2 0.5 9.0 3.3 6.4 8.8 6.5 0.5 2.8 0 0.6

[0133] Vehicle Formulation

TABLE-US-00002 Texanol [wt %] Butyl diglyme Acrylic resin 43 23 34

[0134] Paste Formulation

TABLE-US-00003 Cu powder [wt %] Glass type; Vehicle Bi.sub.2O.sub.3 [wt %] Paste (d.sub.50 of 4.7 m) [wt %] [wt %] (d.sub.50 of 4.3 m) A 86 A; 3 11 B 86 B; 3 11 C 86 C; 3 11 D 86 11 3

[0135] Starting from these paste formulations, a power component 3 on a ceramic metal substrate 4 was prepared by printing the pastes on a Al.sub.2O.sub.3 ceramic substrate in the area 4b of the power component 3 in a thickness of 40 m. The pastes were dried in an oven at 110 C. for 10 min and sintered at 950 C. for 10 minutes before a Cu foil with a thickness of 300 m was applied onto the dried pastes and the composite was fired in an oven for 150 min, whereby a peak temperature at 1040 C. for 5 minutes was reached.

[0136] For comparison, a ceramic metal substrate was prepared starting from the same ceramic substrate and the same Cu foil as for the examples with pastes, but using a standard DCB process with a bonding time of 160 min and a peak temperature in the range of 1078 C. for 4 minutes. This ceramic substrate 4 comprises an area 4b for a power component 4 prepared by a classical DCB process.

[0137] The finished metal ceramic substrates have been subject to thermal cycles (15 min at 40 C., 15 sec. transfer time, 15 min at +150 C.). The test results can be seen in the following table.

TABLE-US-00004 Metal ceramic # of thermal cycles substrate Paste before delamination 1 A 1550 2 B 2470 3 C 3040 4 D 2850 5 No paste, standard 100 DCB process