COATING DEVICE AND COATING METHOD FOR TUBE-TYPE PERC SOLAR CELL

Abstract

A coating device for a tube-type PERC solar cell includes a wafer loading area, a furnace body, a gas cabinet, a vacuum system, a heating system, a control system and a graphite boat, wherein the gas cabinet is provided with a first gas line for feeding silane, a second gas line for feeding ammonia, a third gas line for feeding trimethylaluminum, a fourth gas line for feeding nitrous oxide, and a fifth gas line for feeding methane. The graphite boat is employed for loading and unloading a silicon wafer. Pre-processing is performed to the graphite boat before use or after several coating, wherein the pre-processing includes: baking the graphite boat and coating at least one layer of silicon carbide film on a surface of the baked graphite boat. The present application also discloses a coating method for a tube-type PERC solar cell.

Claims

1. A coating device for a tube-type PERC solar cell, comprising: a wafer loading area, a furnace body, a gas cabinet, a vacuum system, a heating system, a control system and a graphite boat, wherein: the gas cabinet includes a first gas line for feeding silane, a second gas line for feeding ammonia, a third gas line for feeding trimethylaluminum, a fourth gas line for feeding nitrous oxide, and a fifth gas line for feeding methane; the graphite boat is configured for loading and unloading a silicon wafer, and is configured to receive a pre-processing the pre-processing including: baking the graphite boat; and coating at least one layer of silicon carbide film on a surface of the graphite boat after the baking.

2. The coating device for the tube-type PERC solar cell of claim 1, wherein the pre-processing includes: placing the graphite boat in a tubular PECVD coating device for baking the graphite boat at a temperature of 300-480 C. for 10-60 minutes; and placing the graphite boat, which has been baked and removed from the tubular PECVD coating device, in the tubular PECVD coating device again to coat the at least one layer of silicon carbide film on the surface of the graphite boat.

3. The coating device for the tube-type PERC solar cell of claim 2, wherein the coating the silicon carbide film includes: raising a temperature in the tubular PECVD coating device to 380-480 C. and feeding ammonia at a flow rate of 1-8 slm for 2-10 minutes with plasma power of 2000-5000 w; feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800 sccm for 5-30 seconds; feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800 sccm for 1-4 hours with plasma power of 3000-10000 w; and lowering the temperature to 350-400 C. and removing the graphite boat.

4. The coating device for the tube-type PERC solar cell of claim 3, wherein the coating the silicon carbide film includes: raising the temperature to 400-460 C. and feeding ammonia at a flow rate of 2-6 slm for 3-8 minutes with plasma power of 3000-4000 w; feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 10-20 seconds; feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 2-3 hours with plasma power of 5000-8000 w; and lowering the temperature to 370-390 C. and removing the graphite boat.

5. The coating device for the tube-type PERC solar cell of claim 1, wherein: the graphite boat includes a pin that includes a pin shaft, a pin cap, and a pin base; the pin shaft is mounted on the pin base; the pin cap is connected to the pin shaft; a pin slot is formed among the pin shaft, the pin cap, and the pin base; and a depth of the pin slot is 0.5-1 mm.

6. The coating device for the tube-type PERC solar cell of claim 5, wherein: the pin slot of the graphite boat has the depth of 0.6-0.8 mm; a diameter of the pin base is 6-15 mm; an angle of inclination of an inclined surface of the pin cap is 35-45 degrees; and a thickness of the pin cap is 1-1.3 mm.

7. The coating device for the tube-type PERC solar cell of claim 6, wherein: the pin slot of the graphite boat has the depth of 0.7-0.8 mm; the diameter of the pin base is 8-12 mm; the angle of inclination of the inclined surface of the pin cap is 37-42 degrees; and the thickness of the pin cap is 1.1-1.2 mm.

8. A coating method for a tube-type PERC solar cell, comprising: baking a graphite boat; coating at least one layer of silicon carbide film on a surface of the graphite boat after the baking; placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into a tubular PECVD coating device; and forming, in the tubular PECVD coating device, a rear composite film on a surface of the silicon wafer, the rear composite film including an aluminum oxide film, a silicon dioxide film, a silicon oxynitride film and a silicon nitride film.

9. The coating method for the tube-type PERC solar cell of claim 8, further comprising: placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 300-480 C. for 10-60 minutes; placing the graphite boat, which has been baked and removed from the tubular PECVD coating device, in the tubular PECVD coating device again to coat the surface of the graphite boat with the at least one layer of silicon carbide film, wherein the coating the silicon carbide film includes: raising temperature to 380-480 C. and feeding ammonia at a flow rate of 1-8 slm for 2-10 minutes with plasma power of 2000-5000 w; feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800 sccm for 5-30 seconds; feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800 sccm for 1-4 hours with plasma power of 3000-10000 w; and lowering the temperature to 350-400 C. and removing the graphite boat; and placing the processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form the rear composite film; wherein the forming the rear composite film includes: depositing the aluminum oxide film using TMA and N.sub.2O, wherein a gas flow rate of TMA is 250-500 sccm, a ratio of TMA to N.sub.2O is in a range between 1 to 15 and 1 to 25, and plasma power is 2000-5000 w; depositing the silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein a gas flow rate of silane is 50-200 sccm, a ratio of silane to nitrous oxide is in a range between 1 to 10 and 1 to 80, a flow rate of ammonia is 0.1-5 slm, and plasma power is 4000-6000 w; depositing the silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 500-1000 sccm, a ratio of silane to ammonia is in a range between 1 to 6 and 1 to 15, a deposition temperature of silicon nitride is 390-410 C., a deposition time is 100-400 seconds, and plasma power is 10000-13000 w; and depositing the silicon dioxide film using nitrous oxide, wherein a flow rate of nitrous oxide is 0.1-5 slm, and plasma power is 2000-5000 w.

10. The coating method for the tube-type PERC solar cell of claim 9, further comprising: placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 320-420 C. for 20-40 minutes; placing the graphite boat, which has been baked and removed from the tubular PECVD coating device, in the tubular PECVD coating device again to coat the surface of the graphite boat with the at least one layer of silicon carbide film, wherein a method of coating the silicon carbide film includes: raising temperature to 400-460 C. and feeding ammonia at a flow rate of 2-6 slm for 3-8 minutes with plasma power of 3000-4000 w; feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 10-20 seconds; feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 2-3 hours with plasma power of 5000-8000 w; and lowering the temperature to 370-390 C. and removing the graphite boat; and placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form the rear composite film; wherein the forming the rear composite film includes: depositing the aluminum oxide film using TMA and N.sub.2O, wherein a gas flow rate of TMA is 250-500 sccm, a ratio of TMA to N.sub.2O is in a range between 1 to 15 and 1 to 25, a deposition temperature of the aluminum oxide film is 250-300 C., a deposition time is 50-300 seconds, and plasma power is 2000-5000 w; depositing the silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein a gas flow rate of silane is 50-200 sccm, a ratio of silane to nitrous oxide is in a range between 1 to 10 and 1 to 80, a flow rate of ammonia is 0.1-5 slm, a deposition temperature of the silicon oxynitride film is 350-410 C., a deposition time is 50-200 seconds, and plasma power is 4000-6000 w; depositing the silicon nitride film using silane and ammonia, wherein a gas flow rate of silane is 500-1000 sccm, a ratio of silane to ammonia is in a range between 1 to 6 and 1 to 15, a deposition temperature of the silicon nitride film is 390-410 C., a deposition time is 100-400 seconds, and plasma power is 10000-13000 w; and depositing the silicon dioxide film using nitrous oxide, wherein a flow rate of nitrous oxide is 0.1-5 slm, and plasma power is 2000-5000 w.

11. The coating device for the tube-type PERC solar cell of claim 1, wherein the graphite boat is configured to receive the pre-processing before the graphite boat is in use or after the graphite boat has been used in several coating operations of the coating device.

12. A coating device, comprising: a wafer loading area, a furnace body, a gas cabinet, a vacuum system, a heating system, a control system and a graphite boat, wherein: the gas cabinet includes a first gas line for feeding silane, a second gas line for feeding ammonia, a third gas line for feeding trimethylaluminum, a fourth gas line for feeding nitrous oxide, and a fifth gas line for feeding methane; and the graphite boat includes at least one layer of silicon carbide on a surface of the graphite boat.

13. The coating device of claim 12, wherein: the graphite boat includes a pin that includes a pin shaft, a pin cap, and a pin base; the pin shaft is mounted on the pin base; the pin cap is connected to the pin shaft; a pin slot is formed among the pin shaft, the pin cap, and the pin base; and a depth of the pin slot is 0.5-1 mm.

14. The coating device of claim 13, wherein: the pin slot of the graphite boat has the depth of 0.6-0.8 mm; a diameter of the pin base is 6-15 mm; an angle of inclination of an inclined surface of the pin cap is 35-45 degrees; and a thickness of the pin cap is 1-1.3 mm.

15. The coating device of claim 13, wherein: the pin slot of the graphite boat has the depth of 0.7-0.8 mm; the diameter of the pin base is 8-12 mm; the angle of inclination of the inclined surface of the pin cap is 37-42 degrees; and the thickness of the pin cap is 1.1-1.2 mm.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0062] FIG. 1 is a schematic diagram of a tubular PECVD device;

[0063] FIG. 2 is a schematic diagram of the graphite boat shown in FIG. 1;

[0064] FIG. 3l is a schematic diagram of a pin of the graphite boat shown in FIG. 2.

DETAILED DESCRIPTION

[0065] To more clearly illustrate the objectives, technical solutions and advantages of the present disclosure, the present disclosure will be further described in details with reference to the accompanying drawings.

[0066] As shown in FIG. 1, the present disclosure provides a coating device for a tube-type PERC (passivated emitter and rear cell or passivated emitter and rear contact) solar cell comprising a wafer loading area 1, a furnace body 2, a gas cabinet 3, a vacuum system 4, a heating system 7, a control system 5 and a graphite boat 6, wherein the gas cabinet is provided with a first gas line for feeding silane, a second gas line for feeding ammonia, a third gas line for feeding trimethylaluminum, a fourth gas line for feeding nitrous oxide, and a fifth gas line for feeding methane; the first gas line, the second gas line, the third gas line, the fourth gas line, and the fifth gas line are disposed inside the gas cabinet 3 and are not illustrated in FIG. 1.

[0067] The graphite boat 6 is used for loading and unloading a silicon water. The graphite boat 6 should be pre-processed before use or after several coating, wherein the pre-processing includes two steps: 1. baking the graphite boat; 2. coating the surface of the baked graphite boat with at least one layer of silicon carbide film.

[0068] A preferred implementation of pre-processing includes the following steps.

[0069] 1. Placing the graphite boat in a tubular PECVD coating device for baking the graphite boat at a temperature of 300-480 C. for 10-60 min. Preferably, the baking temperature is 320-420 C. and the time for baking is 20-50 min. More preferably, the baking temperature is 350-400 C. and the time for baking is 30-40 min. Optimally, the baking temperature is 370-390 C. and the time for baking is 32-35 min. The purpose of baking is to remove water content from the graphite boat and prevent the moisture from reducing the passivation effects of aluminum oxide. The baking temperature is set between 300 and 480 C. to approach the temperature of the coating process and facilitate rapid switch of the coating device between pre-processing and normal production,

[0070] 2. The graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the step of coating the silicon carbide film includes:

[0071] Raising temperature to 380-480 C. and feeding ammonia at a flow rate of 1-8 slm for 2-10 min with plasma power of 2000-5000 w, to fully pre-heat the graphite boat;

[0072] Feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800 sccm for 5-30 s, so that a coating tube is filled therein with a certain proportion of process gas and prepares for plasma coating;

[0073] Feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800sccm for 1-4 hours with plasma power of 3000-10000 w for plasma coating;

[0074] Lowering the temperature to 350-400 C. and taking out the boat.

[0075] In the step of coating silicon carbide film, an optimal effect of pre-processing the graphite boat may be achieved through the cooperation of the above various parameters with fewer materials, less time and boosted production efficiency.

[0076] A preferred implementation of coating the silicon carbide film contains:

[0077] Raising temperature to 400-460 C. and feeding ammonia at a flow rate of 2-6slm for 3-8 min with plasma power of 3000-4000 w;

[0078] Feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 10-20 s;

[0079] Feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 2-3 hours with plasma power of 5000-8000 w;

[0080] Lowering the temperature to 370-390 C. and taking out the boat.

[0081] Before use or after several coating, the graphite boat should be pre-processed, the pre-processing including baking the graphite boat by a heating system and coating the surface of the graphite boat with at least one layer of silicon carbide film by the gas cabinet. When the graphite boat is coated with the silicon carbide film, it is unnecessary to insert the silicon wafer into the boat. Because the silicon carbide is a semiconductor, the rear aluminum oxide coating has satisfactory uniformity, which reduces EL defects such as EL black zone and the like. The steps of pre-processing the graphite boat are decreased to two steps, i.e., baking and coating of silicon carbide, which saves time and enhances production efficiency. In addition, because there are a great many of fine graphite particles dispersed in the silicon carbide matrix, the silicon carbide matrix has an extremely small friction coefficient and exhibits a good self-lubricating property. On this account, when the silicon wafer is inserted into the graphite boat, there are fewer scratches on the silicon wafer, which greatly reduces the proportion of the EL scratches and increases the EL yield of the cell.

[0082] Therefore, with a simple structure, the coating device for the tube-type PERC solar cell simplifies the pre-processing steps of the graphite boat, reduces consumption of silicon wafers, avoids scratches on the silicon wafer, and boosts the EL yield of the cell.

[0083] As shown in FIGS. 2 and 3, the graphite boat 6 is used for loading and unloading silicon wafers. The graphite boat 6 includes a pin 60 which includes a pin shaft 61, a pin cap 62, and a pin base 63. The pin shaft 61 is mounted on the pin base 63. The pin cap 62 is connected to the pin shaft 61. A pin slot 64 is formed among the pin shaft 61, the pin cap 62, and the pin base 63. The depth of the pin slot 64 is 0.5-1 mm.

[0084] As shown in FIG. 3, the depth of the pin slot 64, h, is preferably 0.6-0.8 mm; the diameter of the pin base 63, D, is preferably 6-15 mm; the angle of inclination of the inclination surface of the pin cap 62, , is preferably 35-45 degrees; and the thickness of the pin cap 62, a, is preferably 1-1.3 mm.

[0085] More preferably, the depth of the pin slot 64 of the graphite boat, h, is 0.7-0.8 mm; the diameter of the pin base 63, D, is 8-12 mm; the angle of inclination of the inclined surface of the pin cap 62, , is 37-42 degrees; and the thickness of the pin cap 62, a, is 1.1-1.2 mm.

[0086] Optimally, the depth of the pin slot 64, h, is 0.7 mm; the diameter of the pin base 63, D, is 9 min; the angle of inclination of the inclination surface of the pin cap 62, , is 40 degrees; and the thickness of the pin cap 62, a, is 1.2 mm.

[0087] It should be noted that the depth h of the pin slot is the depth of the inside of the pin slot, and mainly refers to the depth of the side of the pin shaft 61 that forms an angle with the pin base 63. The depth h of the pin slot =(the diameter of the pin basethe diameter of the pin shaft)/2. The angle of inclination of the inclination surface of the pin cap 62, , refers to the angle between the inclination surface of the pin cap and the vertical direction.

[0088] In the prior art, the depth h of the pin slot is 1.75 mm, the diameter D of the pin base is 9 mm, the angle of inclination of the inclination surface of the pin cap is 30 degrees, and the thickness a of the pin cap is 1 mm. In the prior art, the pin slot is deeper, which leads to a too big gap between the silicon wafer and the pin base at the position of the pin; and as a result, a lot of gas reaches and is coated on the rear surface of the silicon wafer, leading to the formation of a large number of boat teeth marks at the front surface edge of the cell. The pin cap has a small angle of inclination and a small thickness, leading to small adjustment room for the automatic wafer inserter; and consequentially, it is difficult to effectively lower the occurrence of scratching.

[0089] When employing tubular PECVD for rear film deposition, scratching and undesirable coating are contradictive. By adjusting an automatic wafer inserter, the silicon wafer can be inserted into the pin slot without contacting the graphite boat wall, during which the silicon wafer is kept at a distance from the graphite boat to avoid friction between the silicon wafer and the graphite boat wall. If the distance between the silicon wafer and the graphite boat plate were too large, scratching would be less likely to take place, but the possibility of the undesirable coating would increase as the silicon wafer would be less easy to be close to the boat wall. If the distance between the silicon wafer and the graphite boat plate were too large.sub.; the silicon wafer may be prevented from being inserted into the pin slot, and the silicon wafer may fall off as a result. If the distance between the silicon wafer and the graphite boat plate were too small, the silicon wafer would be closer to the graphite boat plate. As a result, undesirable coating would be less likely to take place, but the proportion of scratching would increase.

[0090] The position of the boat teeth mark at the edge of the front surface of the cell corresponds to the position of the pin during coating the rear surface by PECVD. The mark is formed as a result of gas flowing to the front surface of the cell from the position of the pin. Since the thickness of the pin base is slightly smaller than the thickness of the graphite boat plate, there is a gap between the silicon wafer and the pin base at the position of the pin. When coating the rear surface, the gas enters the gap from two sides below the pin shaft, which causes a film deposited at the front surface edge of the silicon wafer, i.e., forming a semi-circular boat teeth mark.

[0091] The present disclosure adjusts the diameter D of the pin base and the diameter of the pin shaft to reduce the depth h of the inside of the pin slot. As a result, the gap between the silicon wafer and the pin base at the position of the pin is reduced; consequentially, the amount of gas reaching and coating the rear surface of the silicon wafer is reduced, and boat teeth marks at the front surface edges are, thus, much less likely to occur.

[0092] By adjusting the automatic wafer inserter, after inserting the silicon wafer into a certain position in the graphite boat, the suction cup releases its vacuum and, thus.sub.; the silicon water falls onto the inclined surface a of the pin cap. As an effect of gravity, the silicon wafer slides down the inclined surface until it is close to the graphite boat wall. This type of insertion is contactless and could reduce scratching of the silicon wafer.

[0093] The present disclosure adequately increases the angle of inclination a of the inclined surface of the pin cap and the thickness a of the pin cap, and adjusts the automatic wafer inserter, thereby slightly increasing the distance between the silicon water and the graphite boat wall on inserting the wafer, reducing scratching. Increasing the angle of inclination of the inclined surface of the pin cap reduces the impact force on the silicon wafer from the graphite boat wall when the silicon wafer is sliding down, reducing breakage rate.

[0094] It should be noted that in the prior art, the problem of undesirable coating is typically tackled after the production is completed. For example, in the alkali polishing method during the production of PERC crystalline silicon solar cells disclosed in Chinese Patent Application No. 201510945459.3, after coating a silicon nitride film on the front surface by PECVD, the undesirable silicon nitride coating at the rear surface and the edges is removed by a belt-type transmission etching method, thereby solving the present problems of poor passivation at the rear surface due to undesirable coating formed during depositing the front film, and others. However, in the tube-type PERC cell of the present disclosure, undesirable coating takes place at the front surface during depositing the rear coating; and p-n junctions present at the front surface would be destroyed if the alkali polishing method of the above patent were used. By adjusting the coating process and the coating structure, the present disclosure can avoid undesirable coating during the production process and solve the problem of undesirable coating from its root. No additional process is required, which simplifies the overall process and reduces production cost. The disclosure is of great importance for the solar photovoltaic industry, which is extremely cost-sensitive. Moreover, the present disclosure also solves the problem of scratching.

[0095] Correspondingly, the present disclosure also discloses a coating method for a tube-type FERC solar cell, comprising:

[0096] (1) baking a graphite boat;

[0097] (2) coating at least one layer of silicon carbide film on a surface of the baked graphite boat;

[0098] (3) placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device, so as to form a rear composite film on the surface of the silicon water, wherein the rear composite film includes an aluminum oxide film, a silicon dioxide film, a silicon oxynitride film, and a silicon nitride film.

[0099] As a preferred implementation of the coating method, the coating method includes:

[0100] (1) placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 300-480 C. for 10-60 min;

[0101] (2) the graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows: [0102] raising temperature to 380-480 C. and feeding ammonia at a flow rate of 1-8 slm for 2-10 min with plasma power of 2000-5000 w; [0103] feeding methane at a flow rate of 2-8slm and silane at a flow rate of 200-800 sccm for 5-30 s; [0104] feeding methane at a flow rate of 2-8 slm and silane at a flow rate of 200-800 sccm for 1-4 hours with plasma power of 3000-10000 w; [0105] lowering the temperature to 350-400 C. and taking out the boat;

[0106] (3) placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows: [0107] depositing an aluminum oxide film using TMA and N.sub.2O, wherein the gas flow rate of TMA is 250-500 sccm, the ratio of TMA to N.sub.2O is 1 to 15-25, and the plasma power is 2000-5000 w; [0108] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 50-200 sccm, the ratio of silane to nitrous oxide is 1 to 10-80, the flow rate of ammonia is 0.1-5 slm, and the plasma power is 4000-6000 w; [0109] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 500-1000 sccm, the ratio of silane to ammonia is 1 to 6-15, the deposition temperature of silicon nitride is 390-410 C., the deposition time is 100-400 s, and the plasma power is 10000-13000 w; and [0110] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 0.1-5 slm, and the plasma power is 2000-5000 w,

[0111] As a more preferred implementation of the coating method, the coating method includes:

[0112] (1) placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 320-420 C. for 20-40 min;

[0113] (2) the graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows: [0114] raising temperature to 400-460 C. and feeding ammonia at a flow rate of 2-6 slm for 3-8 min with plasma power of 3000-4000 w; [0115] feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 10-20 s; [0116] feeding methane at a flow rate of 3-6 slm and silane at a flow rate of 300-600 sccm for 2-3 hours with plasma power of 5000-8000 w; [0117] lowering the temperature to 370-390 C. and taking out the boat.

[0118] (3) placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows: [0119] depositing an aluminum oxide film using TMA and N.sub.2O, wherein the gas flow rate of TMA is 250-500 sccm, the ratio of TMA to N.sub.2O is 1 to 15-25, the deposition temperature of the aluminum oxide film is 250-300 C., the deposition time is 50-300 s, and the plasma power is 2000-5000 w; [0120] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 50-200 sccm, the ratio of silane to nitrous oxide is 1 to 10-80, the flow rate of ammonia is 0.1-5 slm, the deposition temperature of the silicon oxynitride film is 350-410 C., the deposition time is 50-200 s, and the plasma power is 4000-6000 w; [0121] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 500-1000 sccm, the ratio of silane to ammonia is 1 to 6-15, the deposition temperature of the silicon nitride film is 390-410 C., the deposition time is 100-400 s, and the plasma power is 10000-13000 w; and [0122] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 0.1-5 slm, and the plasma power is 2000-5000 w.

[0123] The applicant discovered that undesirable coating mainly occurs during the deposition of silicon nitride. This is because silicon nitride is the outer (top) layer of the rear composite film; and as the deposition time increases, the thickness of the film at the surface of the silicon wafer increases, which causes the silicon wafer to bend. As a result, silane and ammonia are probably coated to the front surface edge of the cell. By shortening the time and temperature of silicon nitride deposition, the bending of the silicon wafer can be reduced and, thus, the amount of the undesirable coating can be reduced. Further experiments have shown that the temperature window for silicon nitride deposition is very narrow, between 390-410 C.; when the temperature is further lowered, the amount of the undesirable coating increases, however.

[0124] When depositing the aluminum oxide film, the plasma power is set to 2000-5000 w; when depositing the silicon oxynitride film, the plasma power is set to 4000-6000 w; when depositing the silicon nitride film, the plasma power is set to 10000-13000 w; and when depositing the silicon dioxide film, the plasma power is set to 2000-5000 w. This ensures that different layers have good deposition rates and improves deposition uniformity.

[0125] Therefore, the coating method for the tube-type PERC solar cell can simplify the pre-processing steps of the graphite boat, reduce consumption of silicon wafers, avoid scratches on the silicon wafer, reduce EL defects such as EL black zone and the like and enhance the EL yield of the cell.

[0126] The present disclosure is further elaborated below with reference to the specific embodiments.

Embodiment 1

[0127] (1) Placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 300 C. for 20 min;

[0128] (2) The graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows:

[0129] raising temperature to 380 C. and feeding ammonia at a flow rate of 1 slm for 2 min with plasma power of 2000 w;

[0130] feeding methane at a flow rate of 2 slm and silane at a flow rate of 200 sccm for 5 s;

[0131] feeding methane at a flow rate of 2 slm and silane at a flow rate of 200 sccm for 1 hour with plasma power of 3000 w;

[0132] lowering the temperature to 350 C. and taking out the boat.

[0133] (3) Placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows:

[0134] depositing an aluminum oxide film using TMA and N.sub.2O, wherein the gas flow rate of TMA is 250 sccm, the ratio of TMA to N.sub.2O is 1 to 15, the deposition temperature of the aluminum oxide film is 250 C., the time is 50 s, and the plasma power is 2000 w;

[0135] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 50 sccm, the ratio of silane to nitrous oxide is 1 to 10, the flow rate of ammonia is 0.1 slm, the deposition temperature of the silicon oxynitride film is 350 C., the time is 50 s, and the plasma power is 4000 w,

[0136] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 500 sccm, the ratio of silane to ammonia is 1 to 6, the deposition temperature of the silicon nitride film is 390 C., the time is 100 s, and the plasma power is 10000 w; and

[0137] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 0.1 slm, and the plasma power is 2000 w.

Embodiment 2

[0138] (1) Placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 350 C. for 25 min;

[0139] (2) The graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows:

[0140] raising temperature to 400 C. and feeding ammonia at a flow rate of 2 slm for 3 min with plasma power of 3000 w;

[0141] feeding methane at a flow rate of 4 slm and silane at a flow rate of 400 sccm for 10 s;

[0142] feeding methane at a flow rate of 3 slm and silane at a flow rate of 300 sccm for 2 hours with plasma power of 5000 w;

[0143] lowering the temperature to 360 C. and taking out the boat.

[0144] (3) Placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows:

[0145] depositing an aluminum oxide film using TMA and. N.sub.2O, wherein the gas flow rate of TMA is 300 sccm, the ratio of TMA to N.sub.2O is 1 to 18, the deposition temperature of the aluminum oxide film is 260 C., the time is 80 s, and the plasma power is 2500 w;

[0146] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 80 sccm, the ratio of silane to nitrous oxide is 1 to 20, the flow rate of ammonia is 1 slm, the deposition temperature of the silicon oxynitride film is 360 C., the time is 100 s, and the plasma power is 4500 w;

[0147] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 600 sccm, the ratio of silane to ammonia is 1 to 8, the deposition temperature of the silicon nitride film is 395 C., the time is 150 s, and the plasma power is 10000 w; and

[0148] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 1 slm, and the plasma power is 2500 w.

Embodiment 3

[0149] (1) Placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 370 C. for 30 min;

[0150] (2) The graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows:

[0151] raising temperature to 420 C. and feeding ammonia at a flow rate of 5 slm for 5 min with plasma power of 4000 w;

[0152] feeding methane at a flow rate of 5 slm and silane at a flow rate of 500 sccm for 15 s,

[0153] feeding methane at a flow rate of 4 slm and silane at a flow rate of 500 sccm for 1.5 hours with plasma power of 6000 w;

[0154] lowering the temperature to 380 C. and taking out the boat.

[0155] (3) Placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows:

[0156] depositing an aluminum oxide film using TMA and N.sub.2O, wherein the gas flow rate of TMA is 350 sccm, the ratio of TMA to N.sub.2O is 1 to 22, the deposition temperature of the aluminum oxide film is 280 C., the time is 150 s, and the plasma power is 3500 w;

[0157] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 180 sccm, the ratio of silane to nitrous oxide is 1 to 40, the flow rate of ammonia is 3 slm, the deposition temperature of the silicon oxynitride film is 380 C., the time is 150 s, and the plasma power is 5000 w;

[0158] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 800 sccm, the ratio of silane to ammonia is 1 to 10, the deposition temperature of the silicon nitride film is 405 C., the time is 300 s, and the plasma power is 12000 w; and

[0159] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 4 slm, and the plasma power is 4000 w.

Embodiment 4

[0160] (1) Placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 400 C. for 35 min;

[0161] (2) The graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows:

[0162] raising temperature to 450 C. and feeding ammonia at a flow rate of 6 slm for 8 min with plasma power of 4000 w;

[0163] feeding methane at a flow rate of 6slm and silane at a flow rate of 500 sccm for 20 s;

[0164] feeding methane at a flow rate of 6 slm and silane at a flow rate of 500 sccm for 1 hour with plasma power of 8000 w;

[0165] lowering the temperature to 390 C. and taking out the boat

[0166] (3) Placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows:

[0167] depositing an aluminum oxide film using TMA and N.sub.2O, wherein the gas flow rate of TMA is 400 sccm, the ratio of TMA to N.sub.2O is 1 to 20, the deposition temperature of the aluminum oxide film is 280 C., the time is 250 s, and the plasma power is 4500 w;

[0168] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 180 sccm, the ratio of silane to nitrous oxide is 1 to 60, the flow rate of ammonia is 4 sire, the deposition temperature of the silicon oxynitride film is 400 C., the time is 180 s, and the plasma power is 5500 w;

[0169] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 900 sccm, the ratio of silane to ammonia is 1 to 14, the deposition temperature of the silicon nitride film is 400 C., the time is 300 s, and the plasma power is 13000 w; and

[0170] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 4 slm, and the plasma power is 4000 w.

Embodiment 5

[0171] (1) Placing the graphite boat in the tubular PECVD coating device for baking the graphite boat at a temperature of 420 C. for 30 min;

[0172] (2) The graphite boat, after being baked and taken out, is placed in the tubular PECVD coating device again to coat the surface of the graphite boat with at least one layer of silicon carbide film, wherein the method of coating the silicon carbide film is as follows:

[0173] raising temperature to 480 C. and feeding ammonia at a flow rate of 8 slm for 10 min with plasma power of 5000 w;

[0174] feeding methane at a flow rate of 8 slm and silane at a flow rate of 800 sccm for 30 s;

[0175] feeding methane at a flow rate of 8 slm and silane at a flow rate of 800 sccm for 1 hour with plasma power of 10000 w;

[0176] lowering the temperature to 400 C. and taking out the boat.

[0177] (3) Placing a processed silicon wafer on the graphite boat and sending the processed silicon wafer via the graphite boat into the tubular PECVD coating device to form a rear composite film, wherein the method of coating the rear composite film is as follows:

[0178] depositing an aluminum oxide film using TMA and N.sub.2O, wherein the gas flow rate of TMA is 500 sccm, the ratio of TMA to N.sub.2O is 1 to 25, the deposition temperature of the aluminum oxide film is 300 C., the time is 300 s, and the plasma power is 5000 w;

[0179] depositing a silicon oxynitride film using silane, ammonia, and nitrous oxide, wherein the gas flow rate of silane is 200 sccm, the ratio of silane to nitrous oxide is 1 to 80, the flow rate of ammonia is 5 slm, the deposition temperature of the silicon oxynitride film is 410 C., the time is 200 s, and the plasma power is 6000 w;

[0180] depositing a silicon nitride film using silane and ammonia, wherein the gas flow rate of silane is 1000 sccm, the ratio of silane to ammonia is 1 to 15, the deposition temperature of the silicon nitride film is 410 C., the time is 400 s, and the plasma power is 13000 w; and

[0181] depositing a silicon dioxide film using nitrous oxide, wherein the flow rate of nitrous oxide is 5 slm, and the plasma power is 5000 w.

[0182] Technical test for the coating methods according to embodiments 1-5 are presented below:

TABLE-US-00001 Consumption Scratching Preprocessing of silicon rate of EL time for Item wafers silicon wafer yield graphite boat Prior Art 280 slices 5-10% 20-60% 3-6 h per boat Embodiment 1 0 .sup.1-4% 80-90% around 82 min Embodiment 2 0 .sup.1-3% 85-90% around 148 min Embodiment 3 0 1-2.5% 90-95% around 125 min Embodiment 4 0 0.5-3.5%.sup. 95-97% around 103 min Embodiment 5 0 0.5-2% 95-98% around 100 min

[0183] To sum up, implementation of the present disclosure achieves following advantageous effects:

[0184] I. The present disclosure provides a coating device for a tube-type PERC solar cell comprising a heating system and a gas cabinet, wherein the gas cabinet is provided with a first gas line for feeding silane, a second gas line for feeding ammonia, a third gas line for feeding trimethlaluminum, a fourth gas line for feeding nitrous oxide, and a fifth gas line for feeding methane. Before use or after several coating, the graphite boat should be pre-processed. Specifically, the graphite boat is baked by a heating system and the surface of the graphite boat is coated with at least one layer of silicon carbide film by the gas cabinet. When the graphite boat is coated with the silicon carbide film, it is unnecessary to insert the silicon wafer into the boat. Because the silicon carbide is a semiconductor, the rear aluminum oxide coating has satisfactory uniformity. The steps of pre-processing the graphite boat are decreased to two steps. i.e., baking and coating of silicon carbide, which saves time and enhances production efficiency. In addition, because there are a great many of fine graphite particles dispersed in the silicon carbide matrix, the silicon carbide matrix has an extreme small friction coefficient and exhibits a good self-lubricating property. On this account, when the silicon wafer is inserted into the graphite boat, there are fewer scratches on the silicon wafer, which greatly reduces the proportion of the EL scratches and increases the EL yield of the cell.

[0185] Furthermore, the present disclosure adjusts the diameters of the pin shaft and the pin base to reduce the depth of the inside of the pin slot. As a result, the gap between the silicon wafer and the pin base at the position of the pin is reduced. Further, the amount of gas reaching and coating the rear surface of the silicon wafer is reduced, and boat teeth marks at the front surface edges of the cell thus are much less likely to occur. In addition, the present disclosure adequately increases the angle of inclination of the inclined surface of the pin cap and the thickness of the pin cap, and adjusts the automatic wafer inserter, thereby slightly increasing the distance between the silicon wafer and the graphite boat wall on inserting the wafer, and reducing scratching. Meanwhile, it is possible to reduce the impact force on the silicon wafer from the graphite boat wall when the silicon water is sliding down, reducing breakage rate.

[0186] II. The present disclosure provides a coating method for a tube-type PERC solar cell. Prior to the coating of the rear composite film, it is only required to pre-process the graphite boat with two steps (baking+coating of silicon carbide), without coating the boat with a wafer inserted like the prior art. This greatly reduces the consumption of silicon wafers, prevents the silicon wafer from bending a lot due to a thick coating on its surface, saves production time and enhances production efficiency. Moreover, during the process of coating the silicon carbide film, because there are a great many of fine graphite particles dispersed in the silicon carbide matrix, the silicon carbide matrix has an extreme small friction coefficient and exhibits a good self-lubricating property. On this account, when the silicon wafer is inserted into the graphite boat, there are fewer scratches on the silicon wafer, which greatly reduces the proportion of the EL scratches and increases the EL yield of the cell.

[0187] Furthermore, during the process of coating the rear composite film, the deposition temperature for silicon nitride is set to 390-410 C., and the deposition time is set within 100-400 s, according to the present disclosure. By shortening the time and temperature of silicon nitride deposition, the bending of the silicon water can be reduced, and thus the amount of the undesirable coating can be reduced. The temperature window for silicon nitride deposition is very narrow, between 390-410 C., which may allow the maximum reduction of the undesirable coating. When the deposition temperature is below 390 C., the amount of the undesirable coating increases, however.

[0188] Finally, it should be noted that the above embodiments are only intended to illustrate the technical solutions of the present disclosure and are not intended to limit the scope of the present disclosure. Although the present disclosure has been described in detail with reference to the preferred embodiments, it should be appreciated by those of ordinary skill in the art that the technical solutions of the present disclosure may be modified or equivalently substituted without departing from the spirit and scope of the technical solutions of the present disclosure.