SEPARATED GAS INLET STRUCTURE FOR BLOCKING PLASMA BACKFLOW
20230238218 · 2023-07-27
Inventors
- Haiyang LIU (Xuzhou, CN)
- Xiaobo LIU (Xuzhou, CN)
- Dongdong HU (Xuzhou, CN)
- Jun ZHANG (Xuzhou, CN)
- Shiran CHENG (Xuzhou, CN)
- Song GUO (Xuzhou, CN)
- Na LI (Xuzhou, CN)
- Kaidong XU (Xuzhou, CN)
Cpc classification
International classification
Abstract
A separated gas inlet structure for blocking plasma backflow includes a gas inlet flange and an upper gas inlet nozzle and a lower gas inlet nozzle made of ceramic materials. The upper gas inlet nozzle is coaxially nested or stacked at the top of the lower gas inlet nozzle; a broken line type gas inlet channel is in the upper gas inlet nozzle and the lower gas inlet nozzle and the gas inlet channel includes an upper axial channel, a radial channel, a lower axial channel and a gas outlet; the radial channel or the lower axial channel is at a mounting matching part of the upper gas inlet nozzle and the lower gas inlet nozzle; and the top of the lower axial channel points to a bottom wall surface of the upper gas inlet nozzle.
Claims
1. A separated gas inlet structure for blocking plasma backflow, wherein the structure comprises a gas inlet flange, an upper gas inlet nozzle and a lower gas inlet nozzle that both are made of ceramic materials; a top of the upper gas inlet nozzle extends into a bottom of the gas inlet flange; the upper gas inlet nozzle is coaxially nested or coaxially stacked at a top of the lower gas inlet nozzle, both the top of the upper gas inlet nozzle and the top of the lower gas inlet nozzle are lapped on a coupling window; a broken line type gas inlet channel is provided in the upper gas inlet nozzle and the lower gas inlet nozzle, and the gas inlet channel includes an upper axial channel, a radial channel, a lower axial channel and a gas outlet; a top of the upper axial channel is in communication with the gas inlet channel of the gas inlet flange, a bottom of the upper axial channel is in communication with the radial channel; the radial channel or the lower axial channel is positioned at a mounting matching part of the upper gas inlet nozzle and the lower gas inlet nozzle; and a top of the lower axial channel is in communication with the radial channel and points to a bottom wall surface of the upper gas inlet nozzle; the bottom of the lower axial channel is in communication with the gas outlet, the gas outlet points to a vacuum reaction chamber obliquely.
2. The separated gas inlet structure for blocking plasma backflow according to claim 1, wherein the upper gas inlet nozzle is coaxially nested at the top of the lower gas inlet nozzle; a bottom edge of the lower gas inlet nozzle is provided with a plurality of gas outlets circumferentially; the lower axial channel is a plurality of axial edge grooves, which are arranged on a bottom outer wall surface of the upper gas inlet nozzle nested and matched with the lower gas inlet nozzle; the radial channel is radial holes with a same number as the axial edge grooves, all radial holes are built in a middle of the upper gas inlet nozzle circumferentially; each radial hole is arranged along a radial direction of the upper gas inlet nozzle; an outer end of each radial hole is in communication with a top of a corresponding lower axial channel; the upper axial channel is axial straight non-through holes with the same number as the axial edge grooves; a bottom end of each axial straight non-through hole is in communication with an inner end of a corresponding radial hole, and a top end of each axial straight non-through hole is in communication with the gas inlet channel of the gas inlet flange.
3. The separated gas inlet structure for blocking plasma backflow according to claim 2, wherein the lower axial channel is in communication with the gas outlet through a uniform-gas channel, the uniform-gas channel is arranged on the outer wall surface of the lower gas inlet nozzle located below the lower axial channel.
4. The separated gas inlet structure for blocking plasma backflow according to claim 2, wherein a nesting clearance between the upper gas inlet nozzle and the lower gas inlet nozzle is greater than 0.1 mm.
5. The separated gas inlet structure for blocking plasma backflow according to claim 2, wherein the upper gas inlet nozzle is respectively sealed with a bottom of the gas inlet flange and a side wall surface of the coupling window through a sealing ring.
6. The separated gas inlet structure for blocking plasma backflow according to claim 1, wherein the upper gas inlet nozzle is coaxially stacked at the top of the lower gas inlet nozzle; a center of the upper gas inlet nozzle is provided with an upper axial channel, the upper axial channel is a plurality of axial through holes uniformly arranged along a circumferential direction with respect to a central axis of the upper gas inlet nozzle; the radial channel is arranged at a top center of the lower gas inlet nozzle; the gas outlet is arranged at the bottom edge of the lower gas inlet nozzle circumferentially; the lower axial channel includes the axial straight non-through holes with the same number as the gas outlets; all axial straight non-through holes are built in an edge of the lower gas inlet nozzle circumferentially, and are configured to communicate the radial channel with the gas outlet.
7. The separated gas inlet structure for blocking plasma backflow according to claim 6, wherein the radial channel is a circular radial uniform-gas channel.
8. The separated gas inlet structure for blocking plasma backflow according to claim 6, wherein the upper gas inlet nozzle is respectively sealed with the bottom of the gas inlet flange and the side wall surface of the coupling window through the sealing ring.
9. The separated gas inlet structure for blocking plasma backflow according to claim 1, the top of the upper gas inlet nozzle and the top of the lower gas inlet nozzle are both provided with a lap flange lapped on the coupling window, respectively; a height of the radial channel is lower than the lap flange at the top of the lower gas inlet nozzle.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0042]
[0043]
[0044]
[0045]
[0046]
[0047]
[0048]
[0049]
[0050]
[0051]
[0052]
[0053] Provided in
[0054] 1. Reaction chamber; 2. Electrostatic adsorption chuck; 3. Wafer; 4. Chamber cover; 5. Coupling window; 6. Coil; 7. Shielding box; 8. RF matcher ; 50. Gas inlet nozzle; 51, 80. Central gas inlet guide body; 511, 801. Upper vertical holes; 512, 802. Middle radial holes; 513, 803. Lower vertical holes; 52. Gas inlet flange.
[0055] Provided in
[0056] 60. Upper gas inlet nozzle; 601. Axial straight non-through hole; 602. Radial hole; 603. Axial edge groove; 604. Sealing groove; 605. Uniform-gas channel; 61. Lower gas inlet nozzle; 611. Gas outlet.
[0057] Provided in
[0058] 90. Upper gas inlet nozzle; 901. Axial non-through hole; 902. Sealing groove; 91. Lower gas inlet nozzle; 911. Radial uniform-gas channel; 912. Axial straight non-through hole; 913. Gas outlet; 914. Axial through-hole distribution ring; 915. Axial straight non-through hole distribution ring.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0059] The present disclosure will be further described in detail below in combination with the accompanying drawings and specific preferred implementations.
[0060] In the description of the present disclosure, it should be understood that the terms such as “left side”, “right side”, “upper”, “lower” indicate the orientation or position relationship based on the orientation or position relationship illustrated in the drawings, which is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. The “first”, “second” and the like do not indicate the importance of the parts, and therefore cannot be understood as a limitation of the present disclosure.
[0061] The present disclosure adopts the following two preferred embodiments for detailed description. The specific size or quantity used in the embodiments is only for an illustration of the technical solutions, and does not limit the protection scope of the present disclosure.
[0062] Embodiment 1
[0063] As illustrated in
[0064] The top of the upper gas inlet nozzle is preferably provided with an upper boss, and the bottom of the upper gas inlet nozzle is preferably provided with a lower boss. The upper boss extends into the bottom of the gas inlet flange. The design of the upper boss utilizes the structure of the upper gas inlet nozzle itself to enable the gas inlet channel and the gas inlet flange 52 to be RF insulated.
[0065] The upper gas inlet nozzle is coaxially nested at the lower gas inlet nozzle. The top of the upper gas inlet nozzle and the top of the lower gas inlet nozzle are both provided with a lap flange lapped on the coupling window, respectively.
[0066] The upper gas inlet nozzle is respectively sealed with the bottom of the gas inlet flange and the side wall surface of the coupling window through a sealing ring. The specific preferred setting is that: the upper surface of the lap flange of the upper gas inlet nozzle and the outer wall surface of the upper gas inlet nozzle located below the lap flange are provided with a sealing groove 604 as illustrated in
[0067] A broken line type gas inlet channel is provided in the upper gas inlet nozzle and the lower gas inlet nozzle. The broken line design of the gas inlet channel is to avoid the close communication between the gas inlet channel and the RF components, and to avoid the sufficient channel distance in the vertical direction for the electronic movement ignition.
[0068] The gas inlet channel includes an upper axial channel, a radial channel, a lower axial channel and a gas outlet.
[0069] As illustrated in
[0070] The upper axial channel is preferably arranged along the axial direction of the upper gas inlet nozzle, the top of the upper axial channel is in communication with the gas inlet channel of the gas inlet flange, the bottom of the upper axial channel is in communication with the radial channel.
[0071] As illustrated in
[0072] The height of the radial channel is lower than the lap flange at the top of the lower gas inlet nozzle. The lap flange is capable of sealing the gas flow in the radial channel. In addition, when the plasma gas flow inside the reaction chamber reflows through the gas outlet, the plasma gas flow will not contact the mounting matching part of the upper gas inlet nozzle and the lower gas inlet nozzle after passing through the lower axial channel.
[0073] The radial channel is preferably radial holes 602 with the same number as axial edge grooves, all radial holes are built in the middle of the upper gas inlet nozzle circumferentially; each radial hole is arranged along the radial direction of the upper gas inlet nozzle; the outer end of each radial hole is in communication with the top of the corresponding lower axial channel.
[0074] The lower axial channel is positioned at the mounting matching part of the upper gas inlet nozzle and the lower gas inlet nozzle.
[0075] The lower axial channel is preferably arranged along the axial direction of the lower gas inlet nozzle, and the top of the lower axial channel is in communication with the radial channel and points to the bottom wall surface of the upper gas inlet nozzle. The bottom of the lower axial channel is in communication with the gas outlet, the gas outlet points to the vacuum reaction chamber obliquely.
[0076] The lower axial channel is preferably a plurality of axial edge grooves 603, which are arranged on the bottom outer wall surface (that is, the outer wall surface of the lower boss) of the upper gas inlet nozzle nested and matched with the lower gas inlet nozzle. The lower axial channel is preferably in communication with the gas outlet through the uniform-gas channel 605, the uniform-gas channel is arranged on the outer wall surface of the lower gas inlet nozzle located below the lower axial channel.
[0077] The nesting clearance between the upper gas inlet nozzle and the lower gas inlet nozzle may be greater than 0.1 mm, which can effectively solve the technical problems of plasma backflow in the prior art, resulting in the gas discharge in the gas inlet channel, forming high charges in the gas inlet channel, and burning out the gas inlet guide body, prevent the upper gas inlet nozzle from expanding and damaging the lower gas inlet nozzle due to the heat generated during plasma backflow. In addition, the processing requirements for the gas inlet nozzle are not high, which is convenient for popularization.
[0078] Further, the diameter of the axial edge groove 603 is preferably different from that of the axial straight non-through hole 601, the axial edge groove 603 and the axial straight non-through hole 601 will be faced directly in the vertical direction, and the specific analysis is shown in Embodiment 2.
[0079] The working principle of cleaning is as follows: during the cleaning process is conducted in the system, the cleaning gas is introduced from the gas inlet flange 52, flows through the gas holes 601, 602 and 603 on the upper gas inlet nozzle 60, and is eventually discharged from the gas outlet 611 at the bottom of the lower gas inlet nozzle 61 after being uniformed by 605. When the plasma gas flow inside the reaction chamber reflows through the gas outlet, the plasma gas flow enters the axial edge groove 603 through the gas inlet channel. Since the upper part of the axial edge groove 603 is physically blocked, the plasma gas flow will hit the physical wall on the upper part of the axial edge groove 603 at this position, and the energy in the electrons will gradually disappear with the collision, that is, the area closest to the gas inlet flange 52 with RF power is insulated and uncharged, and the path in conduction with the high-power components cannot be formed, thus protecting the upper gas inlet nozzle 60 from the damage of high heat and high RF. Since both the upper gas inlet nozzle 60 and the lower gas inlet nozzle 61 are made of ceramic materials, they are not eroded by strong oxidizing and reducing plasma, thus avoiding the generation of particles and polluting the wafer. Due to the design on the structure and material of the upper gas inlet nozzle 60, the fit clearance between the position where the axial edge groove 603 is located and the lower gas inlet nozzle 61 can be expanded, so as to prevent the upper gas inlet nozzle from expanding and damaging the lower gas inlet nozzle 61 due to the heat generated during plasma backflow.
[0080] Embodiment 2
[0081] As illustrated in
[0082] The top of the upper gas inlet nozzle is preferably provided with an upper boss. The upper boss extends into the bottom of the gas inlet flange. The design of the upper boss utilizes the structure of the upper gas inlet nozzle itself to enable the gas inlet channel and the gas inlet flange 52 to be RF insulated.
[0083] The bottom of the upper gas inlet nozzle is a plane, preferably coaxially stacked at the top of the lower gas inlet nozzle.
[0084] The top of the upper gas inlet nozzle and the top of the lower gas inlet nozzle are both provided with a lap flange lapped on the coupling window.
[0085] The upper gas inlet nozzle is respectively sealed with the bottom of the gas inlet flange and the side wall surface of the coupling window through a sealing ring. The preferred setting is specifically as follows: the upper surface of the lap flange of the upper gas inlet nozzle and the outer wall surface of the upper gas inlet nozzle located below the lap flange are provided with a sealing groove 902 as illustrated in
[0086] A broken line type gas inlet channel is provided in the upper gas inlet nozzle and the lower gas inlet nozzle. The design principle of the broken line is the same as above.
[0087] The gas inlet channel includes an upper axial channel, a radial channel, a lower axial channel and a gas outlet.
[0088] As illustrated in
[0089] As illustrated in
[0090] Further, the height of the radial channel is lower than the lap flange at the top of the lower gas inlet nozzle, and the design principle is the same as Embodiment 1.
[0091] The gas outlet 913 is arranged circumferentially along the bottom edge of the lower gas inlet nozzle.
[0092] The lower axial channel includes axial straight non-through holes 912 with the same number as gas outlets; all axial straight non-through holes are built in the edge of the lower gas inlet nozzle circumferentially, and are configured to communicate the radial channel with the gas outlet. The top of the axial straight non-through hole 912 points to the bottom wall surface of the upper gas inlet nozzle.
[0093] As illustrated in
[0094] Further, the radius difference between the axial straight non-through hole distribution ring 915 and the axial through hole distribution ring 914 should preferably be greater than or equal to the maximum of the diameters of the axial straight non-through holes 912 and the axial through holes 901, so that the axial straight non-through holes 912 and the axial through holes 901 will not directly face with each other in the vertical direction.
[0095] The working principle of cleaning is that: during the cleaning process is conducted in the system, the cleaning gas is introduced from the gas inlet flange 52, flows through the axial through hole 901 on the upper gas inlet nozzle 90, and is eventually discharged from the axial straight non-through hole 912 and the gas outlet 913 at the bottom after being uniformed through the radial uniform-gas channel 911 formed together with the lower gas inlet nozzle 91.
[0096] When the plasma gas flow inside the reaction chamber reflows through the gas outlet, the plasma gas flow enters the axial straight non-through hole 912 through the gas inlet channel. Since the upper part of the axial straight non-through hole 912 is physically blocked, the plasma gas flow will hit the physical wall on the upper part of the axial straight non-through hole 912 at this position, and the energy in the electrons will gradually disappear with the collision, that is, the area closest to the gas inlet flange 52 with RF power is insulated and uncharged, and the path in conduction with the high-power components cannot be formed, thus protecting the upper gas inlet nozzle 90 and the lower gas inlet nozzle 91 from the damage of high heat and high RF. Since both the upper gas inlet nozzle 90 and the lower gas inlet nozzle 91 are made of ceramic materials, they are not eroded by strong oxidizing and reducing plasma, thus avoiding the generation of particles and polluting the wafer. There is no clearance between the upper and lower parts of the gas inlet nozzle, thereby preventing the upper gas inlet nozzle 90 from expanding and damaging the lower gas inlet nozzle 91 due to the heat generated during plasma backflow.
[0097] By designing the gas inlet nozzle into an upper and lower part structure and the gas inlet channel into a broken line or bow shape, the present disclosure can reduce the plasma backflow in the cavity and prevent the backflow gas from contacting the high-power RF components, thus avoiding the close communication between the gas channel and the RF components, preventing the gas channel in the vertical direction from being sufficient for electronic movement ignition to damage the inlet structure, and preventing the strong oxidizing and reducing plasma from eroding the gas inlet device to generate particles and pollute the wafer.
[0098] Although the preferred embodiments of the present disclosure are described in detail above, the present disclosure is not limited to the specific details of the above implementations. A variety of equivalent transformations can be made to the technical solutions of the present disclosure within the scope of the technical concepts of the present disclosure, and these equivalent transformations all belong to the protection scope of the present disclosure.