MULTI-LEVEL VOLTAGE CIRCUIT AND RELATED APPARATUS
20200204422 ยท 2020-06-25
Inventors
Cpc classification
H03G1/0005
ELECTRICITY
H04L27/2646
ELECTRICITY
H04L27/361
ELECTRICITY
H03F1/32
ELECTRICITY
H04L27/3405
ELECTRICITY
International classification
H04L27/34
ELECTRICITY
Abstract
A multi-level voltage circuit and related apparatus are provided. The multi-level voltage circuit is configured to provide an average power tracking (APT) voltage to an amplifier circuit for amplifying a radio frequency (RF) signal, which can be modulated in a number of orthogonal frequency division multiplexing (OFDM) symbols. The RF signal may experience power fluctuations from one OFDM symbol to another and the multi-level voltage circuit may need to adjust the APT voltage accordingly. In examples discussed herein, when the APT voltage needs to increase from a present value to a higher future value at a predetermined effective time, the multi-level voltage circuit may start increasing the APT voltage from the present value toward the future value ahead of the predetermined effective time. As such, it may be possible to ramp up the APT voltage in a timely fashion to help improve linearity and efficiency of the amplifier circuit.
Claims
1. A multi-level voltage circuit comprising: a voltage circuit coupled to an amplifier circuit and configured to provide an average power tracking (APT) voltage to the amplifier circuit for amplifying a radio frequency (RF) signal; and a control circuit coupled to the voltage circuit and configured to: receive a command sequence comprising: a voltage indicator configured to indicate a future value of the APT voltage higher than a present value of the APT voltage; and a voltage change trigger succeeding the voltage indicator in the command sequence and configured to indicate a predetermined effective time of the future value; and control the voltage circuit to increase the APT voltage from the present value toward the future value independent of the voltage change trigger.
2. The multi-level voltage circuit of claim 1 wherein the control circuit is further configured to: control the voltage circuit to increase the APT voltage from the present value to at least one intermediate value higher than the present value of the APT voltage and lower than the future value of the APT voltage before the predetermined effective time; and control the voltage circuit to increase the APT voltage from the at least one intermediate value to the future value at the predetermined effective time.
3. The multi-level voltage circuit of claim 2 wherein the at least one intermediate value is configured to equal one-half of the future value of the APT voltage.
4. The multi-level voltage circuit of claim 1 wherein the control circuit is further configured to control the voltage circuit to increase the APT voltage from the present value to the future value before the predetermined effective time of the future value.
5. The multi-level voltage circuit of claim 1 wherein: the RF signal is modulated in a plurality of orthogonal frequency division multiplex (OFDM) symbols; and the control circuit is further configured to: receive the command sequence in a selected OFDM symbol among the plurality of OFDM symbols; and control the voltage circuit to effectuate the future value of the APT voltage in a second selected OFDM symbol immediately succeeding the selected OFDM symbol among the plurality of OFDM symbols.
6. The multi-level voltage circuit of claim 5 wherein the predetermined effective time of the future value of the APT voltage is configured to align with a starting boundary of the second selected OFDM symbol.
7. The multi-level voltage circuit of claim 1 further comprising a plurality of registers, wherein: a lower numbered register among the plurality of registers is configured to store the voltage indicator; and a higher numbered register among the plurality of registers is configured to store the voltage change trigger.
8. The multi-level voltage circuit of claim 7 wherein the command sequence comprises an RF front-end (RFFE) extended register write command sequence configured to write sequentially from the lower numbered register to the higher numbered register.
9. The multi-level voltage circuit of claim 8 wherein the control circuit is further configured to control the voltage circuit to increase the APT voltage from the present value toward the future value when the RFFE extended register write command sequence completes writing the lower numbered register and prior to the RFFE extended register write command sequence completes writing the higher numbered register.
10. An amplifier apparatus comprising: an amplifier circuit configured to amplify a radio frequency (RF) signal based on an average power tracking (APT) voltage; and a multi-level voltage circuit comprising: a voltage circuit configured to provide the APT voltage to the amplifier circuit; and a control circuit coupled to the voltage circuit and configured to: receive a command sequence comprising: a voltage indicator configured to indicate a future value of the APT voltage higher than a present value of the APT voltage; and a voltage change trigger succeeding the voltage indicator in the command sequence and configured to indicate a predetermined effective time of the future value; and control the voltage circuit to increase the APT voltage from the present value toward the future value independent of the voltage change trigger.
11. The amplifier apparatus of claim 10 further comprising a transceiver circuit configured to provide the RF signal and the command sequence to the amplifier circuit and the control circuit, respectively.
12. The amplifier apparatus of claim 11 wherein the transceiver circuit is coupled to the control circuit via an RF front-end (RFFE) interface.
13. The amplifier apparatus of claim 10 wherein the control circuit is further configured to: control the voltage circuit to increase the APT voltage from the present value to at least one intermediate value higher than the present value of the APT voltage and lower than the future value of the APT voltage before the predetermined effective time; and control the voltage circuit to increase the APT voltage from the at least one intermediate value to the future value at the predetermined effective time.
14. The amplifier apparatus of claim 13 wherein the at least one intermediate value is configured to equal one-half of the future value of the APT voltage.
15. The amplifier apparatus of claim 10 wherein the control circuit is further configured to control the voltage circuit to increase the APT voltage from the present value to the future value before the predetermined effective time of the future value.
16. The amplifier apparatus of claim 10 wherein: the RF signal is modulated in a plurality of orthogonal frequency division multiplex (OFDM) symbols; and the control circuit is further configured to: receive the command sequence in a selected OFDM symbol among the plurality of OFDM symbols; and control the voltage circuit to effectuate the future value of the APT voltage in a second selected OFDM symbol immediately succeeding the selected OFDM symbol among the plurality of OFDM symbols.
17. The amplifier apparatus of claim 16 wherein the predetermined effective time of the future value of the APT voltage is configured to align with a starting boundary of the second selected OFDM symbol.
18. The amplifier apparatus of claim 10 wherein the multi-level voltage circuit further comprises a plurality of registers, wherein: a lower numbered register among the plurality of registers is configured to store the voltage indicator; and a higher numbered register among the plurality of registers is configured to store the voltage change trigger.
19. The amplifier apparatus of claim 18 wherein the command sequence comprises an RF front-end (RFFE) extended register write command sequence configured to write sequentially from the lower numbered register to the higher numbered register.
20. The amplifier apparatus of claim 19 wherein the control circuit is further configured to control the voltage circuit to increase the APT voltage from the present value toward the future value when the RFFE extended register write command sequence completes writing the lower numbered register and prior to the RFFE extended register write command sequence completes writing the higher numbered register.
Description
BRIEF DESCRIPTION OF THE DRAWING FIGURES
[0012] The accompanying drawing figures incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.
[0013]
[0014]
[0015]
[0016]
[0017]
[0018]
[0019]
[0020]
[0021]
DETAILED DESCRIPTION
[0022] The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
[0023] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items.
[0024] It will be understood that when an element such as a layer, region, or substrate is referred to as being on or extending onto another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being directly on or extending directly onto another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being over or extending over another element, it can be directly over or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being directly over or extending directly over another element, there are no intervening elements present. It will also be understood that when an element is referred to as being connected or coupled to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being directly connected or directly coupled to another element, there are no intervening elements present.
[0025] Relative terms such as below or above or upper or lower or horizontal or vertical may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.
[0026] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms a, an, and the are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms comprises, comprising, includes, and/or including when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
[0027] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
[0028] Embodiments of the disclosure relate to a multi-level voltage circuit and related apparatus. The multi-level voltage circuit is configured to provide an average power tracking (APT) voltage to an amplifier circuit for amplifying a radio frequency (RF) signal, which can be modulated in a number of orthogonal frequency division multiplexing (OFDM) symbols. The RF signal may experience power fluctuations from one OFDM symbol to another. Accordingly, the multi-level voltage circuit may need to adjust the APT voltage for each of the OFDM symbols. In examples discussed herein, when the multi-voltage circuit needs to increase the APT voltage from a present value to a higher future value at a predetermined effective time, the multi-level voltage circuit may be configured to start increasing the APT voltage from the present value toward the future value ahead of the predetermined effective time. As such, it may be possible to ramp up the APT voltage in a timely fashion to help improve linearity and efficiency of the amplifier circuit.
[0029] Before discussing a multi-level voltage circuit and related apparatus of the present disclosure, a brief overview of an existing amplifier apparatus is first provided with reference to
[0030] In this regard,
[0031] The constant voltage V.sub.MCP may cause the inductor 38 to induce a low-frequency current I.sub.CC, which in turn charges the offset capacitor 40 to generate the APT voltage V.sub.CC. The amplifier circuit 30 is configured to receive the APT voltage V.sub.CC from the multi-level voltage circuit 28 and amplify the RF signal 32 based on the APT voltage V.sub.CC.
[0032] The existing amplifier apparatus 26 may include or be coupled to a transceiver circuit 44 configured to modulate the RF signal 32 into a number of OFDM symbols . . . , SYMBOL(n2), SYMBOL(n1), SYMBOL(n), SYMBOL(n+1), . . . that are separated by a respective cyclic prefix (CP) 46. The input power P.sub.IN of the RF signal 32 is so modulated to correspond to a time-variant power envelope 48. According to the previous discussion of
[0033] In this regard, the transceiver circuit 44 may be configured to provide a voltage change trigger 49, which indicates a predetermined effective time T.sub.e of the voltage change, to the control circuit 42. In turn, the control circuit 42 controls the voltage circuit 34 to effectuate the voltage change.
[0034]
[0035] As mentioned earlier in
[0036] With reference back to
[0037] In this regard,
[0038] As shown in
[0039] In this regard,
[0040] The multi-level voltage circuit 58 includes a voltage circuit 62. The voltage circuit 62 includes an MCP 64, an inductor 66, and an offset capacitor 68. The MCP 64 is coupled to a battery voltage V.sub.BAT and configured to output a constant voltage V.sub.MCP. The multi-level voltage circuit 58 further includes a control circuit 70. In a non-limiting example, the control circuit 70 can control the MCP 64 to generate the constant voltage V.sub.MCP at zero-time of the battery voltage V.sub.BAT (0V.sub.BAT), one-time of the battery voltage V.sub.BAT (1V.sub.BAT), or two-times of the battery voltage V.sub.BAT (2V.sub.BAT).
[0041] The constant voltage V.sub.MCP may cause the inductor 66 to induce a low-frequency current I.sub.CC, which in turn charges the offset capacitor 68 to generate the APT voltage V.sub.CC. The amplifier circuit 60 is configured to receive the APT voltage V.sub.CC from the multi-level voltage circuit 58 and amplify an RF signal 72 from a time-variant input power P.sub.IN to a time-variant output power P.sub.OUT based on the APT voltage V.sub.CC.
[0042] The amplifier apparatus 56 may include or be coupled to a transceiver circuit 74 configured to modulate the RF signal 72 into a number of OFDM symbols . . . , SYMBOL(n2), SYMBOL(n1), SYMBOL(n), SYMBOL(n+1), . . . that are separated by a respective cyclic prefix (CP) 76. The time-variant input power P.sub.IN of the RF signal 72 is so modulated to correspond to a time-variant power envelope 78. According to the previous discussion of
[0043] In this regard, the transceiver circuit 74 may be configured to provide a command sequence 80, which can include a voltage indicator configured to indicate the future value V.sub.CC2 of the APT voltage V.sub.CC and a voltage change trigger configured to indicate a predetermined effective time T.sub.e of the voltage increase, to the control circuit 70. In turn, the control circuit 70 controls the voltage circuit 62 to effectuate the voltage increase. The multi-level voltage circuit 58 can be configured to include a number of registers R.sub.0-R.sub.N for storing the future value V.sub.CC2 of the APT voltage V.sub.CC and the predetermined effective time T.sub.e, among other configuration parameters. In examples discussed herein, R.sub.0 represents a lowest numbered register and R.sub.N represents a highest numbered register among the registers R.sub.0-R.sub.N.
[0044] In a non-limiting example, the multi-level voltage circuit 58 can include an RF front-end (RFFE) interface 82 configured to couple the control circuit 70 to the transceiver circuit 74. In this regard, the transceiver circuit 74 can be configured to provide an RFFE command sequence 84 (e.g., an RFFE extended register write command sequence) as the command sequence 80. The RFFE command sequence 84 may be configured to write to the registers R.sub.0-R.sub.N sequentially from the lowest numbered register R.sub.0 to the highest numbered register R.sub.N. In a non-limiting example, the voltage indicator indicating the future value V.sub.CC2 of the APT voltage V.sub.CC is configured to be stored in a lower numbered register (e.g., R.sub.3) and the voltage change trigger indicating the predetermined effective time T.sub.e is configured to be stored in a higher numbered register (e.g., R.sub.28). In this regard, the control circuit 70 will receive the future value V.sub.CC2 prior to receiving the predetermined effective time T.sub.e. Accordingly, the multi-level voltage circuit 58 can be configured to increase the APT voltage V.sub.CC from the present value V.sub.CCL toward the future value V.sub.CCH after receiving the future value V.sub.CC2 and prior to receiving the predetermined effective time T.sub.e. Therefore, the multi-level voltage circuit 58 can be said to increase the APT voltage V.sub.CC from the present value V.sub.CCL toward the future value V.sub.CCH independent of the predetermined effective time T.sub.e.
[0045]
[0046] Notably, the OFDM symbol SYMBOL(n1) can be any selected OFDM symbol among the OFDM symbols . . . , SYMBOL(n2), SYMBOL(n1), SYMBOL(n), SYMBOL (n+1), and so on. Likewise, OFDM symbol SYMBOL(n) can be any second selected OFDM symbol immediately succeeding the selected OFDM SYMBOL(n1) among the OFDM symbols . . . , SYMBOL(n2), SYMBOL(n1), SYMBOL(n), SYMBOL(n+1), and so on. It should be appreciated that the multi-level voltage circuit 58 can be configured to support voltage changes between any pair of the OFDM symbols . . . , SYMBOL(n2), SYMBOL(n1), SYMBOL(n), SYMBOL (n+1), and so on.
[0047] In a non-limiting example, the control circuit 70 can be configured to control the voltage circuit 62 to increase the APT voltage V.sub.CC from the present value V.sub.CCL to at least one intermediate value V.sub.CCM in between the present value V.sub.CCL and the future value V.sub.CCH before the predetermined effective time T.sub.e. In this regard, the voltage circuit 62 may start ramping up the APT voltage immediately upon the future value V.sub.CCH being written into the register R.sub.3 and prior to the predetermined effective time T.sub.e being written into the register R.sub.28. Subsequently at the predetermined effective time T.sub.e, the voltage circuit 62 may continue increasing the APT voltage V.sub.CC from the intermediate value V.sub.CCM to the future value V.sub.CCH. The intermediate value V.sub.CCM may be lower than one-half () of the future value V.sub.CCH, equal to one-half () of the future value V.sub.CCH, or higher than one-half () of the future value V.sub.CCH. It should be appreciated that it may also be possible to control the voltage circuit 62 to increase the APT voltage V.sub.CC from the present value V.sub.CCL to the future value V.sub.CCH via multiple intermediate values V.sub.CCM.
[0048] In this regard, at the predetermined effective time T.sub.e, the voltage circuit 62 only needs to increase the APT voltage V.sub.CC from the intermediate value V.sub.CCM to the future value V.sub.CCH, as opposed to having to increase the APT voltage V.sub.CC from the present value V.sub.CCL to the future value V.sub.CCH. As such, it may be possible to ramp up the APT voltage V.sub.CC from the present value V.sub.CCL to the future value V.sub.CCH within the respective CP 76 of the OFDM symbol SYMBOL(n). As a result, it may be possible to improve EVM performance of the amplifier circuit 60.
[0049]
[0050] As shown in
[0051]
[0052] In a non-limiting example, the control circuit 70 can be configured to control the voltage circuit 62 to increase the APT voltage V.sub.CC from the present value V.sub.CCL to the future value V.sub.CCH before the predetermined effective time T.sub.e. In this regard, the voltage circuit 62 may start ramping up the APT voltage immediately upon the future value V.sub.CCH being written into the register R.sub.3 and prior to the predetermined effective time T.sub.e being written into the register R.sub.28.
[0053]
[0054] Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.