METHOD OF SPUTTER-COATING SUBSTRATES OR OF MANUFACTURING SPUTTER COATED SUBSTRATES AND APPARATUS

Abstract

Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.

Claims

1-54. (canceled)

55. A sputter coating apparatus for substrates with two opposed two-dimensionally extended surfaces comprising: a substrate conveyer in a housing drivingly rotatable around a first axis and comprising more than one substrate support, radially equally distant from said first axis, said substrate supports being thereby rotationally movable along a ring-locus, said ring-locus having, considered in radial direction with respect to said first axis, an outer periphery, an inner periphery and a center line; at least one sputter source comprising a circular target with a sputter surface towards said ring-locus, a target center on said sputter surface, a target center axis and a backside opposite said sputter surface, further a stationary magnetron magnet arrangement facing said backside; said stationary magnetron magnet arrangement comprising a first magnet arrangement defining an outer closed loop of magnet pole surfaces of one magnetic polarity facing said backside and a second magnet arrangement with magnet pole surfaces of the other magnetic polarity facing said backside and nested within said closed loop; a first azimuthal spacing between said first and said second magnet arrangements and, with respect to said first axis, radially closer to said outer periphery of said ring locus than to said inner periphery of said ring locus; a second azimuthal spacing between said first and said second magnet arrangements and, with respect to said first axis, radially closer to said inner periphery of said ring locus than to said outer periphery of said ring locus and being shorter than said first azimuthal spacing; a third azimuthal spacing between said first and said second magnet arrangements and, with respect to said first axis, radially located between said first and said second azimuthal spacings and being shorter than said second azimuthal spacing; said target center being located in a spacing between said first and said second magnet arrangements; said target being drivingly rotatable around said target center axis.

56. The sputter coating apparatus according to claim 55, wherein said third azimuthal spacing is, with respect to said first axis, radially centered between said first and said second azimuthal spacings.

57. The sputter coating apparatus according to claim 55, wherein said third azimuthal spacing is, with respect to said first axis, radially aligned with said center line of said ring locus.

58. The apparatus of claim 55, comprising: a first averaged magnetron magnetic field strength over said sputter surface and over a first azimuthal spacing between said first and said second magnet arrangements and, with respect to said first axis, radially closer to said outer periphery of said ring locus than to said inner periphery of said ring locus; a second averaged magnetron magnetic field strength weaker than said first averaged magnetic field strength, over said sputter surface and over a second azimuthal spacing between said first and said second magnet arrangements and, with respect to said first axis, radially closer to said inner periphery of said ring locus than to said outer periphery of said ring locus.

59. The apparatus of claim 58, comprising a third averaged magnetron magnetic field strength over said sputter surface and over a third azimuthal spacing between said first and said second magnet arrangements located, with respect to said first axis, radially between said first and said second azimuthal spacings and being weaker than said second averaged magnetic field strength.

60. The apparatus of claim 59, wherein said third averaged magnetron field strength is, with respect to said common axis, at least one of radially between said first averaged magnetron field strength and said second averaged magnetron field strength and of radially aligned with said center line of said ring locus.

61. The apparatus of claim 55, comprising at least two of the following planes: A) said sputter surface in new state extends along a sputter surface plane; B) magnet pole surfaces of said magnetron magnet arrangement extend along a magnet arrangement plane; C) a substrate aligned with said sputter source extends along a substrate plane; D) a target backside extends along a backside plane; wherein said at least two planes intersect at an angle α
0°<α≤20°.

62. The apparatus of claim 61, wherein said planes intersect along a line perpendicular to a plane containing said first axis and said target center.

63. The apparatus of claim 61, wherein the following is valid for the angle α:
0°<α≤10°.

64. The apparatus of claim 55, comprising said first magnet arrangement defining a loop, as follows and referring to the angular position with respect to said target center and with the outwards radial direction from said first axis to said target center as angel zero: over a range from 0° up to 170° to 190°, along the periphery of the circular target; subsequently, bent inward to pass close to said target center; and subsequently, bent outwards towards the periphery of said circular target; subsequently, along the periphery of said circular target back to 0°.

65. The apparatus of claim 55, wherein said target center resides between said loop defined by said first magnet arrangement and said second magnet arrangement, nested in said loop.

66. The apparatus of claim 55, wherein said target center is aligned with said center line of said ring locus.

67. The apparatus of claim 64, wherein said loop defines a secant with respect to said circular target, departing at an angle in the range from 30° to 50°.

68. The apparatus of claim 55, wherein said substrate supports are drivingly rotatable around a respective support central axis.

69. The apparatus of claim 55, wherein said target is of silicon.

70. The apparatus of claim 55, comprising a gas feed into said housing connected to a gas tank arrangement containing at least one reactive gas.

71. The apparatus of claim 70, wherein said gas tank arrangement contains at least one of oxygen and hydrogen.

72. The apparatus of claim 55, comprising at least two of said sputter sources.

Description

[0113] The invention shall now further be exemplified with the help of figures.

[0114] The figures show:

[0115] FIG. 1: schematically and simplified a side view on a section of an embodiment of an apparatus according to the invention;

[0116] FIG. 2: Schematically and simplified a to view on a section of the apparatus according to FIG. 1;

[0117] FIG. 3: In a representation in analogy to that of FIG. 2 of the area of magnetron plasma on the sputter surface of the target and according to an embodiment/variant of the present invention;

[0118] FIG. 4: In a representation in analogy to that of FIG. 2, qualitatively, the area of magnetron plasma along the sputter surface according to an embodiment/variant of the invention;

[0119] FIG. 5: In a representation in analogy to that of FIG. 2 qualitatively the course of magnetic pole surfaces of a magnetron magnet arrangement in an embodiment/variant according to the invention;

[0120] FIG. 6: In a representation in analogy to that of FIG. 2, qualitatively, the area of magnetron plasma along the sputter surface and the respective distribution of strength of magnetron magnetic field in an embodiment/variant of the invention;

[0121] FIG. 7: In a schematic and simplified side view representation, the mutual fine-tuning arrangement of a magnetron magnet arrangement and of a target in an embodiment/variant according to the invention;

[0122] FIG. 8: In a schematic and simplified side view representation, the mutual fine-tuning arrangement of a target and of the substrates in an embodiment/variant according to the invention;

[0123] FIG. 9: In a schematic and simplified side view representation, the mutual fine-tuning arrangement of a target and of a magnetron magnet arrangement in an embodiment/variant according to the invention;

[0124] FIG. 10: In a schematic and simplified side view representation, the mutual fine-tuning arrangement of a target and of the substrates in an embodiment/variant according to the invention;

[0125] FIG. 11: In a schematic and simplified side view representation, the mutual fine-tuning arrangement of the backside and of the sputter surface at a target in an embodiment/variant according to the invention;

[0126] FIG. 12: In a schematic and simplified side view representation, the mutual fine-tuning arrangement of a magnetron magnet arrangement and of the substrates in an embodiment/variant according to the invention;

[0127] FIG. 13: In a schematic and simplified top view representation an embodiment/variant according to the invention with at least two sputter sources according to the invention.

[0128] FIG. 1 shows most schematically and simplified in a side view representation a section of a sputter coating apparatus for substrates with two opposed two-dimensionally extended surfaces performing the methods according to the invention and FIG. 2, most schematically and simplified as well, a top view representation of the section of the apparatus according to FIG. 1.

[0129] A substrate conveyer 1 within a vacuum recipient 3—also addressed as “housing”—is continuously rotatable—ω1—around a first axis A1, driven by a drive 2. More than one or a multitude of substrate supports 5 is provided on the substrate conveyer 1, the centers C5 of the substrate supports 5 equidistant from the axis A1. The substrate supports 5 are constructed to support or hold respectively substrates 7 having two opposed two-dimensionally extended surfaces 7a and 7b. In the embodiment of FIG. 1 and as an example, the two-dimensionally extended surfaces of the substrates 7 extent along a common substrate plane E7. Nevertheless, as exemplified e.g. in FIG. 8, the substrates 7 might be arranged on the substrate supports 5 in tilted positions with respect to the plane E7. The substrates 7 may be flat as shown in FIG. 1 but may also be bent or one of the two-dimensionally extended surface may be bent, the other plane.

[0130] We understand under “a substrate” a single piece but also more than one single piece being simultaneously treated and conveyed on one substrate support 5.

[0131] The substrate supports 5 and thus also the substrates 7 are moved along a ring-locus L7 as shown in FIG. 2. The ring-locus L7 has, with respect to the first axis A1, an outer periphery Po, an inner periphery Pi and a center line Lc7 centered between the peripheries Po and Pi.

[0132] Along their rotational path, the substrates 7 on the substrate supports 5 passes at least one substrate treatment station, thereby at least one sputter source 9.

[0133] The sputter source 9 comprises a circular target 11 with a target center C11, a target center axis A11.

[0134] The target center C11, in top view, may in some embodiments and as shown in FIGS. 1 and 2 be aligned with the center line CL7. The target 11 has a sputter surface 11a towards the ring locus L7 and a backside 11b opposite the sputter surface 11a.

[0135] The sputter source 9 further comprises a magnetron magnet arrangement 13 facing and adjacent the backside 11b of the target 11. As shown schematically at 14, the magnetron magnet arrangement is stationary with respect to the vacuum recipient 3.

[0136] The target 11 and therewith a target holder 15 is rotatable with respect to the stationary magnetron magnet arrangement 13 around the target center axis A11, driven by a drive 12.

[0137] Via a rotation-contact arrangement 16 the target 11 is electrically supplied from a plasma supply source 18. If the target 11 is cooled as by a channel arrangement 20 at along the target holder 15, a liquid cooling medium M is supplied to the target holder 15 via a rotatable flow connection arrangement 22.

[0138] In FIG. 3 and in a representation in analogy to that of FIG. 2 a top view on the magnetron arrangement 13 is shown.

[0139] When the substrate 7 passes the target 11 at a constant angular velocity—ω1—the azimuthal speed va of each area of the substrate 7 is proportional to the radial distance r from the first axis A1. Assuming a predetermined sputter area K on the sputter surface 11a as shown in FIG. 3, it may be seen that the time span a given area of the substrate 7 is exposed to such sputter area K is diminishing the larger the radial spacing r becomes.

[0140] According to the invention and under a first approach the azimuthal extent of the area of magnetron plasma is adapted to the azimuthal speed va of different substrate areas with respect to the first axis A1 and to the azimuthal extent a substrate area passes over the sputter surface 11a of the target 11.

[0141] To do so and according to FIG. 3 the magnetron magnet arrangement 13 is constructed so that a first azimuthal extent AE1 is generated in the area of magnetron plasma 25 closer to the outer periphery Po of the ring L7-locus than to the inner periphery Pi of the ring-locus L7. According to the embodiment of FIG. 3, the first azimuthal extent AE1 resides adjacent and along—or neighboring—the outer periphery Po of the ring-locus L7.

[0142] A second azimuthal extent AE2 is generated in an area of the magnetron plasma 25 closer to the inner periphery Pi of the ring-locus L7 than to the outer periphery Po of the ring-locus L7. This second azimuthal extent AE2 is shorter than the first azimuthal extent AE1. According to the embodiment of FIG. 3, the second azimuthal extent AE2 resides adjacent and along—or neighboring—the inner periphery Pi of the ring-locus L7.

[0143] The target shall be sputtered off all along its sputter surface, on one hand to improve exploitation of target material, on the other hand—and of predominant importance when performing reactive sputtering—to minimize or even avoid net redeposition of material on the sputter surface 11a.

[0144] Therefore, the target 11 is rotated relative to the stationary magnetron arrangement 13 and thus relative to the stationary area of magnetron plasma 25 as of FIG. 3.

[0145] As rotation of the target around axis A11 does not displace the target center C11 and this center area as well is to be sputtered off, a third azimuthal extent AE3 in the area of magnetron plasma 25 is generated by the magnetron magnet arrangement 13 which is shorter than the second azimuthal area AE2 and thus presents a constriction of the loop of the area of magnetron plasma 25. Thereby and irrespective of the rotation of the target 11, the target center C11 is sputtered off during a time span which is shorter than the time spans the target areas nearer to the peripheries Po and Pi are sputtered off, thus reducing the overall erosion of the target center C11 to become at least similar to the erosion amount nearer to the peripheries Po, Pi.

[0146] According to FIG. 4, showing the area of magnetron plasma 25 as generated according to an embodiment of the method according to the invention and by an embodiment of the magnetron magnet arrangement 13 of the apparatus according to the invention, the area of magnetron plasma 25 is located along the periphery P11 of the target 11 starting at an angle Ω of 0° up to an angle Ω in the range R1:

170°≤Ω≤190°.

[0147] Please note that the angle Ω is defined in the target center as origin and at angle value zero in outwards direction of the radial connecting line of the target center C11 and the first axis A1.

[0148] Subsequently the area of magnetron plasma 25 bends towards the target center C11, passes over the target center C11 and bends outwards to again propagate along the periphery P11 of the target, back to Ω=0°.

[0149] Please note, that according to FIG. 4 as well, and as an example, the target center C11 is aligned with the center line CL7 of the ring-locus L7. It is absolutely possible to locate the target center C11 shifted towards one of the peripheries Po or Pi of the ring-locus L7.

[0150] Further and with an eye on FIG. 3 the azimuthal extent AE3 needs not necessarily be centered between the azimuthal extents AE1 and AE2, considered in radial direction with respect to the first axis A1. Accordingly and with an eye on FIG. 4 the target center C11 and the respective section of the magnetron plasma 25, covering the target center C11, need not necessarily be centered between the outermost and the innermost parts of the magnetron plasma 25, considered in radial direction, with respect to the first axis A1.

[0151] An even more accurate effect is achieved, with respect to avoiding thickness variations of the sputter deposited layer on the substrate 7, due to substrate rotation around the first axis A1 and of sputtering the entire sputter surface 11a, if the area of magnetron plasma 25 follows the periphery P11 of the target 11 as a secant 25a, as shown in dash-dotted lines, departing at a range R2 for Ω of

30°≤Ω≤50°.

[0152] FIG. 5 shows qualitatively the magnetron magnet arrangement 13 in a top view.

[0153] A first magnet arrangement 27 of the stationary magnetron magnet arrangement 13 defines a closed loop of subsequent pole surfaces PO1 of one magnet polarity. That the magnetron magnet arrangement 13 is, and thus the pole surfaces PO1 are stationary is represented in FIG. 5 at 14. The magnet pole surfaces PO1 face the backside 11b of the target 11, which latter is not shown in FIG. 5. The loop is thereby not necessarily formed by a respective, uninterrupted series of magnet pole surfaces PO1, but is just defined by the localization of multiple magnetic pole surfaces PO1.

[0154] The loop as defined by the magnet pole surfaces PO1 of the one magnetic polarity is located following the periphery P11 of the target 11 thereby starting at an angle Ω of 0° up to an angle Ω in the range R1:

170°≤Ω≤190°.

[0155] Subsequently the loop of as defined by the magnet pole surfaces PO1 of the first magnet arrangement 27 bends towards the target center C11, passes nearby the target center C11 and bends outwards to again propagate along the periphery P11 of the target back to Ω=0°.

[0156] In dash line, FIG. 5 shows, as an example the second magnet arrangement 29 of the magnetron magnet arrangement 13, as defined by an arrangement of second magnet pole surfaces PO2 of the second magnet polarity, and nested in the loop as defined by the first magnet pole surfaces PO1 of the first magnet arrangement 27. The second magnet arrangement 29 provides magnet pole surfaces PO2 of the second magnet polarity facing the backside 11b of the target 11. The second magnet arrangement 29 comprises a center area 29c. The target center C11 resides between the center area 29c of the second magnet arrangement 29 and the area as defined by the magnetic pole surfaces PO1 of the first magnet arrangement 27 nearby the target center C11.

[0157] As not shown in FIG. 5 the secant 25a of the area of magnetron plasma 25 as of FIG. 4 is realized by a respective secant of the loop as defined by the first magnet arrangement 27 departing at the range R2 for Ω of

30°≤Ω≤50°.

[0158] Up to now and under a first approach of the invention, we have described the stationary area of magnetron plasma 25 and the respective, stationary first magnet arrangement 27 of the magnetron magnet arrangement 13 combined with the rotating target 11 and a continuously rotating substrate conveyer 1, and thus substrates 7, for minimizing thickness variations of the sputter deposited layer and achieving all-over net sputtering of the sputter surface 11a by selectively tailoring the azimuthal extent of the areas of magnetron plasma which are passed by different areas of the substrates, differently spaced from the first axis A1.

[0159] A second approach to resolve object as addressed above shall be explained with the help of FIG. 6 which shows the sputter surface 11a of the target 11 and differs from the embodiment or variant of FIG. 4 with respect to the course of the area of magnetron plasma 26.

[0160] The azimuthal extents AE1a to AE3a are at least similar and differences do not suffice to minimize variations of thickness of the sputter deposited layer on the substrates 7 as desired.

[0161] Instead of tailoring the course of the looping area of the area of magnetron plasma, as of loop 25 of the embodiment of FIG. 4, in this approach the strength of magnetic field averaged over the respective azimuthal extents AEla to AE3a is appropriately varied along the loop of the area of magnetron plasma 26.

[0162] In an area of the sputter surface 11a where the substrates 7 pass the target 11 along the azimuthal pass closer to the outer periphery Po of the ring-locus L7 than to the inner periphery Pi of the ring locus, according to the embodiment as shown in FIG. 6, closely along or neighboring the periphery Po, a first averaged magnetron magnetic field strength H1 is applied.

[0163] In an area where the substrates 7 pass the target 11 along the azimuthal pass AE2 closer to the inner periphery Pi of the ring-locus L7 than to the outer periphery Po of the ring-locus L7, a second averaged magnetron magnetic field strength H2 is applied. The averaged strength H2 is smaller than the averaged strength H1 as schematically represented by the respective thicknesses of the arrows respectively representing the strengths of the magnetron magnetic field. In the embodiment of FIG. 6 the azimuthal pass AE2a is selected closely along or neighboring the inner periphery Pi.

[0164] In a third azimuthal pass AE3a along which the substrates 7 pass the target center C11, a third averaged magnetron magnetic field strength H3 is applied, which is smaller than the second averaged strength H2 of the magnetron magnetic field.

[0165] Here again we mention, that the target canter C11 needs not necessarily be aligned with the center line CL7 of the ring-locus L7, as shown in the embodiment of FIG. 6, but may be located displaced from the center line CL7 in radial direction with respect to the first axis A1.

[0166] Further the third azimuthal pass AE3a needs not necessarily be centered between the azimuthal passes AE1a and AE2a as shown in the embodiment of FIG. 6 and considered in radial direction with respect to the first axis A1.

[0167] As perfectly known to the artisan skilled in magnetron art, magnetron magnetic fields of the different strength H1 to H3 are realized by providing at the magnetron magnet arrangement 13 a number of magnetic pole surfaces which respectively vary along the first and/or second magnet arrangements of the magnetron magnet arrangement 13 and/or by varying the strength of magnets along the first and/or second magnet arrangements.

[0168] It is absolutely possible to combine the approach according to the embodiment of FIGS. 4 and 5 with the approach according to the embodiment of FIG. 6. Thereby and with an eye on the embodiment according to FIG. 4, the averaged strengths of the magnetron magnetic field may be varied as exemplified in dash line by the arrows H1 to H3 in FIG. 4.

[0169] The substrates 7 are in one embodiment and as exemplified in the figures circular and in one embodiment rotated—ω7—around respective substrate central axes A7 located along the center line CL7, at least during exposure to the sputter surface 11a of the target 11 by a drive 19 and as schematically shown in FIG. 2.

[0170] As perfectly known to the skilled artisan in magnetron art, the magnet pole surfaces PO1, PO2 may be realized by at least two permanent magnet arrangements connected in series and linked by a yoke arrangement or are realized by surfaces of pole shoes connected to one or more than one (in series) permanent magnets or by combining such approaches.

[0171] The deposition rate of sputtered material, possibly reacted with a reactive gas, is influenced by at least one of [0172] a) the spacing between the sputter surface 11a and the pole surfaces of the magnetron magnet arrangement 13 facing the backside 11b of the target 11, [0173] b) by the spacing between the sputter surface 11a and the substrate, [0174] c) by the spacing between the backside 11b of the target and the pole surfaces of the magnetron magnet arrangement 13, [0175] d) by the spacing between the backside surface 11b and the substrate, [0176] e) by the spacing between the sputter surface 11a and the backside 11b of the target 11, [0177] f) by the spacing between the substrate and the pole surfaces of the magnetron magnet arrangement 13.

[0178] Therefore fine tuning of the deposition rate distribution may be performed by selectively varying one or more than one of the addressed spacings at the sputter source 9 and/or between the respective parts of the sputter source 9 and the substrates 7 aligned with the sputter source 9 by the rotation—ω1—around the first axis A1.

[0179] FIG. 7 shows schematically and simplified exploiting the influence according to (a) for fine tuning the distribution of deposition rate on the substrates 7 as well net sputtering of the overall sputter surface 11a.

[0180] The sputter surface 11a of the target 11 in a new state, i.e. yet un-sputtered, extends along a sputter surface plane Pss. The magnetic pole surfaces PO1, PO2 of the magnetron magnet arrangement 13, schematically shown in FIG. 7 at PO, extend along or define a magnet arrangement plane Pm.

[0181] The sputter surface plane PSS and the magnet arrangement plane Pm may be arranged to mutually intersect with an angle α1, selected to fine tune the thickness homogeneity of the layer deposited on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0182] FIG. 8 shows schematically and simplified exploiting the influence according to (b) for fine tuning the distribution of deposition rate on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0183] A substrate 7, when aligned with the sputter source 9, extends along a substrate plane Ps.

[0184] The sputter surface plane PSS and the substrate plane PS may be arranged to mutually intersect with an angle α2, selected to fine tune the thickness homogeneity of the layer deposited on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0185] FIG. 9 shows schematically and simplified exploiting the influence according to (c) for fine tuning the distribution of deposition rate on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0186] The backside 11b of the target 11 extends along a backside plane Pbs.

[0187] The backside plane Pbs and the magnet arrangement plane Pm may be arranged to mutually intersect with an angle α3, selected to fine tune the thickness homogeneity of the layer deposited on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0188] FIG. 10 shows schematically and simplified exploiting the influence according to (d) for fine tuning the distribution of deposition rate on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0189] The backside plane Pbs and the substrate plane PS may be arranged to mutually intersect with an angle α4, selected to fine tune the thickness homogeneity of the layer deposited on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0190] FIG. 11 shows schematically and simplified exploiting the influence according to (e) for fine tuning the distribution of deposition rate on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0191] The backside plane Pbs and the sputter surface plane PSS may be arranged to mutually intersect with an angle α5, selected to fine tune the thickness homogeneity of the layer deposited on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0192] FIG. 12 shows schematically and simplified exploiting the influence according to (f) for fine tuning the distribution of deposition rate on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0193] The magnet arrangement planes Pm and the substrate plane PS may be arranged to mutually intersect with an angle α6, selected to fine tune the thickness homogeneity of the layer deposited on the substrates 7 as well as net sputtering of the overall sputter surface 11a.

[0194] The mutual tilting of the respectively addressed two planes may be realized in any direction. As has been addressed the thickness variations of the material layer deposited on the substrates 7 are caused by the different radial spacings of substrate areas from the first axis A1.

[0195] To perform fine tuning in radial direction, with respect to the first axis A1, the addressed tiltings of the respective two planes is, in one embodiment, provided so that the respective intersection lines IL of the addressed two planes is perpendicular to a plane Pα (FIG. 2) which contains the first axis A1 and the target center C11.

[0196] The addressed mutual tiltings of the respective pair of planes with tilting angles α1 to α6 are selected in a range of

0°<α≤10°.

[0197] In one variant of the method or embodiment of the apparatus according to the invention, the material of the target 11 is silicon. In view of the fact, that silicon is a relatively low-cost material, optimum exploitation of the target material is of secondary importance, of primary importance is that the complete sputter surface 11a of the target 11 is net sputtered off.

[0198] This is especially evident if magnetron sputtering is performed in an atmosphere containing at least one reactive gas and coating material is deposited on the substrates 7 which comprises target material reacted with one or more than one reactive gas, thus a material which is different from the target material. Net redeposition of coating material on the sputter surface 11a may be said target poisoning and is minimized or even avoided by the methods and apparatus according to the invention.

[0199] In FIG. 1 a tank arrangement 40 containing at least one reactive gas G is in flow connection with the sputter source 9 either directly, as shown, or via a section of the vacuum recipient 3 (not shown).

[0200] According to the schematic and simplified top view of FIG. 13 on an apparatus according to the invention, performing the methods according to the invention, at least two of the sputter sources 9 namely sputter sources 9a, 9b are provided. Additional treatment sources for the substrates 7 may be provided along the ring locus L7 (not shown in FIG. 13).

[0201] In one embodiment/variant of the invention the at least two sputter source 9a, 9b, both realized according to the invention, have respective targets 11 of silicon. One of the at least two sputter sources, e.g. source 9a according to FIG. 13, performs reactive sputtering of the silicon target in an atmosphere containing hydrogen from a tank arrangement 40a, the second sputter source 9b of the at least two sputter sources performs reactive sputtering in an atmosphere containing oxygen, from a tank arrangement 40b.