QUANTUM COMPUTING DEVICE

Abstract

Provided is a quantum computing device comprising a carbon nanotube, a superconducting substrate in quantum proximity to the nanotube and being in a superconducting state having a pairing correlation matrix with a substantial spin-triplet component in a direction perpendicular to the nanotube, and a magnet arranged to provide a longitudinal magnetic field along a longitudinal axis of the nanotube. Further provided is a quantum computing device comprising at least three substrates made of a superconductor material and each in a superconducting state, and a non-superconducting structure made of a material in which the electrons' closed trajectories experience strong spin-orbit coupling interactions and being in quantum proximity to the substrates. The sum of the phase differences between the order parameters of all of the substrates is at least π.

Claims

1. A quantum computing device comprising: at least three substrates, each made of a superconductor material and each being in a superconducting state; and a non-superconducting structure made of a material in which the electrons' closed trajectories experience strong spin-orbit coupling interactions, said non-superconducting structure being in quantum proximity to said substrates; wherein the sum of the phase differences between the order parameters of all of the substrates is at least π.

2. The quantum computing device according to claim 1, further comprising: two or more loops, each being made of a superconductor material and spanning between a pair of said substrates, each of the substrates being connected to another one of said substrates by at least one of said loops, said connected substrates having a phase difference between respective order parameters thereof; and at least one magnetic source configured to produce a magnetic field through said loops.

3. The quantum computing device according to claim 2, wherein each of said loops defines an inscribed circle having a radius exceeding about 10 μm.

4. The quantum computing device according to claim 3, wherein each of said loops defines an inscribed circle having a radius exceeding about 20 μm.

5. The quantum computing device according to claim 4, wherein each of said loops defines an inscribed circle having a radius exceeding about 30 μm.

6. The quantum computing device according to claim 2, wherein the strength of the magnetic field is no greater than about 10 μT.

7. The quantum computing device according to claim 6, wherein the strength of the magnetic field is no greater than about 1 μT.

8. The quantum computing device according to claim 1, said substrates being in contact with a superconductor material having an electric current passing therethrough.

9. The quantum computing device according to claim 8, wherein the superconductor material is different from the material of the substrates.

10. (canceled)

11. The quantum computing device according to claim 1, wherein the substrates are made of the same material. (Canceled)(Currently amended) The quantum computing device according to claim 1, wherein said non-superconducting structure comprises an elongate nanostructure.

14. The quantum computing device according to claim 13, wherein said elongate nanostructure is made of carbon.

15. (canceled)

16. (canceled)

17. The quantum computing device according to claim 1, wherein said substrates are disposed on the same side of the non-superconducting structure.

18. The quantum computing device according to claim 1, wherein at least some of said substrates are separated by an inert supporting structure.

19. (canceled)

20. A quantum computing device comprising: a carbon nanotube, wherein the carbon nanotube has a central cylindrical axis about which the carbon nanotube is substantially symmetrical under continuous rotation; a superconducting substrate in quantum proximity to the carbon nanotube, wherein the superconducting substrate is in a superconducting state under suitable physical conditions, and wherein the superconducting state has a pairing correlation matrix with a substantial spin-triplet component in a direction perpendicular to the carbon nanotube; and a magnet arranged to provide a longitudinal magnetic field substantially along the central cylindrical axis of the carbon nanotube.

21. The quantum computing device according to claim 20, further comprising: an external gate in quantum proximity to the carbon nanotube; and an adjustable voltage source electrically connected to the external gate.

22. The quantum computing device according to claim 21, wherein the carbon nanotube has a chemical potential, the voltage source being operative to tune the chemical potential such that the carbon nanotube exhibits a half-metallic state.

23. The quantum computing device according to claim 20, wherein the superconducting substrate is a monolayer.

24. The quantum computing device according to claim 20, wherein the superconducting substrate comprises a transition-metal dichalcogenide.

25. (canceled)

26. The quantum computing device according to claim 20, wherein the superconducting substrate comprises a heavy element.

27. (canceled)

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to better understand the subject matter that is disclosed herein and to exemplify how it may be carried out in practice, embodiments will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:

[0032] FIG. 1 is a schematic illustration of a carbon nanotube and its supporting structures in a prior art quantum computing device configuration, featuring a magnet arranged to provide a transverse magnetic field perpendicular to the carbon nanotube's longitudinal axis to induce Zeeman splitting;

[0033] FIG. 2 is a schematic illustration of carbon nanotube and its supporting structures in a quantum computing configuration according to an embodiment of the presently disclosed subject matter, featuring a magnet arranged to provide a longitudinal magnetic field parallel to the carbon nanotube's longitudinal axis;

[0034] FIGS. 3A and 3B are schematic illustrations of examples of components of quantum computing devices according to the presently disclosed subject matter.

[0035] For simplicity and clarity of illustration, elements shown in the figures are not necessarily drawn to scale, and the dimensions of some elements may be exaggerated relative to other elements. In addition, reference numerals may be repeated among the figures to indicate corresponding or analogous elements.

DETAILED DESCRIPTION

[0036] FIG. 2 conceptually illustrates a quantum computing device 200 featuring a carbon nanotube 203 and its auxiliary elements according to an embodiment of the presently disclosed subject matter. Device 200 is mounted on an inert supporting structure 201, on which is mounted a thin superconducting substrate 202, with which carbon nanotube 203 is in quantum proximity. A magnet 220 provides a longitudinal magnetic field 221 along the direction of the central cylindrical axis of carbon nanotube 203. Reference axes 10 indicate that the magnetic flux of longitudinal magnetic field 221 (B.sub.Z) is in the z-direction parallel to the central cylindrical axis of nanotube 203 in the z-direction. Also provided is a gate 204 in quantum proximity to carbon nanotube 203, wherein gate 204 is electrically connected to an adjustable voltage source V.sub.G 205.

[0037] The term “longitudinal” in the context of carbon nanotubes, herein denotes the direction of the central cylindrical axis of the nanotube, extending substantially along this direction, or substantially being parallel thereto. In contrast, the term “transverse” in the context of carbon nanotubes herein denotes a direction substantially perpendicular to the central cylindrical axis. The term “central cylindrical axis” herein denotes the axis about which the nanotube is substantially symmetrical under continuous rotation; that is, the central cylindrical axis of a nanotube is the nanotube's “symmetry axis.”

[0038] The term “quantum proximity” herein denotes a close relative positioning of two structures, such that a physical property or state of one structure is capable of detectably affecting a quantum-mechanical property or state of the other structure.

[0039] The term “superconducting substrate” in the context of being a component of a device, herein denotes a surface made of a material which is in a superconducting state under suitable physical conditions, and which, when the device is in a functionally operational mode, is rendered superconducting by being put in the suitable physical conditions.

[0040] When longitudinal magnetic field 221 combines with the electronic spin-orbital coupling in carbon nanotube 203 under the condition that the electronic rotational symmetry of carbon nanotube 203 is broken (such as by voltage V.sub.G 205 on external gate 204), carbon nanotube 203 exhibits a half-metallic state. Then, when carbon nanotube 203 is in quantum proximity to a superconducting substrate having a significant spin-triplet component in its Cooper pair wave-function (such as superconducting substrate 202), a p-wave topological gap opens in carbon nanotube 203, thereby hosting Majorana fermion quasi-particles at its ends.

[0041] In various embodiments of the presently disclosed subject matter, a superconducting substrate 202 exhibits strong spin-orbital coupling that is conducive to pairing of electrons that are spin-polarized in the plane of substrate 202. In these embodiments, superconducting substrate 202 has a pairing correlation matrix with a substantial spin-triplet component in a direction perpendicular to carbon nanotube 203. In related embodiments, substrate 202 comprises a transition-metal dichalcogenide (TMD). TMDs exhibit strong Ising spin-orbit coupling, with a triplet component pointing in the out-of-plane direction. This is necessarily perpendicular to nanotube 203, whose longitudinal axis is parallel to the surface plane of superconducting substrate 202. Other embodiments comprise heavy elements, such as lead (Pb) and gold (Au), in superconducting substrate 202. According to a related embodiment, a thin film is employed for superconducting substrate 202. In another related embodiment, the thin film is a monolayer. In other related embodiments, TMDs comprise niobium diselenide (NbSe.sub.2) and molybdenum disulfide (MoS.sub.2).

[0042] In a further embodiment of the presently disclosed subject matter, voltage source 205 is adjusted to tune the chemical potential of carbon nanotube 203 to exhibit a half-metallic state, thereby opening up a topological gap in carbon nanotube 203, and hosting Majorana fermion quasi-particles at the ends of carbon nanotube 203.

[0043] As illustrated in FIG. 3A, another example of a quantum computing device is provided, which is generally indicated at 300. The device 300 comprises three or more substrates 302 made of a superconducting material and being in a superconducting state. The substrates 302 are disposed on a non-superconducting structure 304 such that they are in quantum proximity therewith. The non-superconducting structure is made of a material which is characterized, inter alia, by electrons having closed trajectories which experience high spin-orbit coupling. According to some examples, it may comprise a non-superconducting metal and/or a conventional semiconductor. The sum of phase differences between the order parameters of the substrates 302 is at least π. Owing to its strong spin-orbit coupling, the phase difference of the substrates 302 gives rise to Majorana fermion quasi-particles at opposite sides of the non-superconducting structure 304. A spin-orbit coupling interaction may be considered to be “strong” if, e.g., it is characterized by a spin-orbit parameter having a value which is larger than that at which the device operates.

[0044] The substrates 302 may be made from any suitable superconducting material. Non-limiting examples include aluminum, niobium, lead, and a superconducting transition metal dichalcogenide. All of the substrates 302 may be made from the same material, or two or more may be made from different materials.

[0045] The non-superconducting structure 304 may be made from any suitable material. Non-limiting examples include mercury telluride, indium arsenide, indium antimonide, niobium diselenide, lead, and a superconducting transition metal dichalcogenide. According to some examples the material of the non-superconducting structure is different than that of the substrates 302. According to other examples the material of the non-superconducting structure is the same as that of the substrates 302.

[0046] According to some examples, loops 306 of superconducting material are provided to facilitate the required phase difference in the substrates 302. Each of the loops 306 spans between two of the substrates 302, such that each of the substrates is in contact with at least one loop 306. A magnetic source, indicated schematically at 308 is provided to produce a magnetic field through the loops 306. The loops 306 may have a large diameter, for example about 30 μm, such that the magnetic flux required to induce the necessary phase difference in the substrates 302 is relatively low, for example about 1 μT.

[0047] According to other examples, for example as illustrated in FIG. 3B, the non-superconducting structure 304 may comprise an elongate nanostructure. According to some examples, the elongate nanostructure may be a carbon nanotube as illustrated. According to other examples (not illustrated), the elongate nanostructure may be a carbon nanofiber. The substrates 302 may be arranged in two or more parallel layers, with an inert supporting structure 310 disposed therebetween. Similar to the example described above with reference to and as illustrated in FIG. 3A, loops 306 of superconducting material may be provided to facilitate the required phase difference in the substrates 302, with a magnetic source (not illustrated in FIG. 3A) provided to produce the small magnetic field necessary to induce the phase difference. When order parameters of the substrates 302 are produced having phase differences whose sum is at least π, Majorana fermion quasi-particles arise at opposite longitudinal ends of the nanostructure.

[0048] It will be appreciated that the examples described above with reference to and as illustrated in FIGS. 3A and 3B are by way of example, and a computing device may be provided according to the presently disclosed subject matter in which a phase difference in the order parameters of the substrates 302 is produced by any other suitable means. For example, according to some modifications, the computing devices 300 may be provided as described above with reference to and as illustrated in FIGS. 3A and 3B, but without the loops 306 and magnetic source 308. In order to produce order parameters which have the required phase difference, the substrates may be connected by a piece of superconductor materiel, e.g., a fiber, through which an electrical current is passed, for example as is well known in the art.

[0049] It will be further appreciated that while the examples described above with reference to and as illustrated in FIGS. 3A and 3B comprise three substrates 302, a computing device 300 may be provided according to the presently disclosed subject matter with more than three substrates, for example four, five, or six substrates, as long as the sum of the phase differences between the order parameters thereof is at least π.

[0050] Those skilled in the art to which this invention pertains will readily appreciate that numerous changes, variations, and modifications can be made without departing from the scope of the presently disclosed subject matter, mutatis mutandis.