GROWTH METHOD OF HIGH-TEMPERATURE PHASE LANTHANUM BOROSILICATE CRYSTAL AND USE

Abstract

The present disclosure provides a growth method of a high-temperature phase lanthanum borosilicate crystal, where the high-temperature phase lanthanum borosilicate crystal is a β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal prepared by a high-temperature flux method; a composite flux system is (La.sub.1-yLn.sub.y)BO.sub.3—LiMoO.sub.4—SiO.sub.2—B.sub.2O.sub.3, and (La.sub.1-yLn.sub.y)BO.sub.3, LiMoO.sub.4, SiO.sub.2, and B.sub.2O.sub.3 in the system have molar percentages of x.sub.1, x.sub.2, x.sub.3, and x.sub.4, respectively; 0<x.sub.1<0.3, 0.7≤x.sub.2<1, 0<x.sub.3<0.3, x.sub.1+x.sub.2+x.sub.3=1, x.sub.1:x.sub.4=2:1 to 4:1. In the present disclosure, a difficulty is overcome in the crystal growth of β-LaBSiO.sub.5 due to phase transition. The crystal is an optical function material that does not undergo the phase transition during annealing and can exist stably at room temperature. The crystal is widely used in laser, terahertz, and other fields.

Claims

1. A growth method of a high-temperature phase lanthanum borosilicate crystal, wherein the high-temperature phase lanthanum borosilicate crystal is a β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal prepared by a high-temperature flux method; a composite flux system is (La.sub.1-yLn.sub.y)BO.sub.3—LiMoO.sub.4—SiO.sub.2—B.sub.2O.sub.3, and (La.sub.1-yLn.sub.y)BO.sub.3, LiMoO.sub.4, SiO.sub.2, and B.sub.2O.sub.3 in the system have molar percentages of x.sub.1, x.sub.2, x.sub.3, and x.sub.4, respectively; 0<x.sub.1<0.3, 0.7≤x.sub.2<1, 0<x.sub.3<0.3, x.sub.1+x.sub.2+x.sub.3=1, x.sub.1:x.sub.4=2:1 to 4:1.

2. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 1, wherein phase transition of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal is suppressed by controlling a microscopic crystal structure of LaBSiO.sub.5 through a doping ion Ln.sup.3+; and the doping ion Ln.sup.3+ is one or more rare earth ions selected from the group consisting of Eu.sup.3+, Nd.sup.3+, Y.sup.3+, Yb.sup.3+, Dy.sup.3+, Lu.sup.3+, Tb.sup.3+, Sm.sup.3+, Tm.sup.3+, Er.sup.3+, Gd.sup.3+, Ho.sup.3+, Ce.sup.3+, Pr.sup.3+, and Sc.sup.3+.

3. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 2, wherein the doping ion Ln.sup.3+ has a doping concentration of y, 0.02≤y≤0.25; and the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal is stabilized to room temperature without the phase transition.

4. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 1, wherein (La.sub.1-yLn.sub.y)BO.sub.3 has a raw material comprising La.sub.2O.sub.3, Ln.sub.2O.sub.3, H.sub.3BO.sub.3, and Li.sub.2CO.sub.3; LiMoO.sub.4 has a raw material comprising Li.sub.2CO.sub.3 and MoO.sub.3; and B.sub.2O.sub.3 has a raw material of H.sub.3BO.sub.3.

5. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 3, wherein the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal has a trigonal system structure, a space group of P3.sub.121, and a unit cell parameters a=b; α=β=90°, γ=120°, Z=3.

6. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 5, wherein when Ln is equal to Eu and y is 0.1, a and b each are 6.8697 Å, and c is 6.7099 Å.

7. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 5, wherein when Ln is equal to Nd and y is 0.1, a and b each are 6.8769 Å, and c is 6.7204 Å.

8. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 1, wherein a crystal structure of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal comprises B—O groups, Si—O groups, and La—O groups; the B—O groups form a helical chain that extends along a c-axis by sharing oxygen atoms, and the La—O groups also form a helical chain that extends along the c-axis by sharing oxygen atoms; two B—O bonds in a B—O polyhedron are cleaved, and two O atoms bonded to B atoms are statistically distributed, resulting in local disordering permutation.

9. The growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 1, wherein crystal growth is conducted at 700° C. to 1100° C., with a cooling rate of 0.5° C./d to 600° C./d; after the crystal growth is completed, an annealing rate is 240° C./d to 800° C./d; and the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal is grown with seed crystals at a crystal rotation rate of 5 rpm to 20 rpm.

10. A β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal prepared by the growth method of a high-temperature phase lanthanum borosilicate crystal according to claim 1, wherein the β-La.sub.1-yLn.sub.yBSiO.sub.5 is an optical function material in a solid optical device.

11. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 10, wherein phase transition of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal is suppressed by controlling a microscopic crystal structure of LaBSiO.sub.5 through a doping ion Ln.sup.3+; and the doping ion Ln.sup.3+ is one or more rare earth ions selected from the group consisting of Eu.sup.3+, Nd.sup.3+, Y.sup.30+, Yb.sup.3+, Dy.sup.3+, Lu.sup.3+, Tb.sup.3+, Sm.sup.3+, Tm.sup.3+, Er.sup.3+, Gd.sup.3+, Ho.sup.3+, Ce.sup.3+, Pr.sup.3+, and Sc.sup.3+.

12. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 11, wherein the doping ion Ln.sup.3+ has a doping concentration of y, 0.02≤y≤0.25; and the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal is stabilized to room temperature without the phase transition.

13. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 10, wherein (La.sub.1-yLn.sub.y)BO.sub.3 has a raw material comprising La.sub.2O.sub.3, Ln.sub.2O.sub.3, H.sub.3BO.sub.3, and Li.sub.2CO.sub.3; LiMoO.sub.4 has a raw material comprising Li.sub.2CO.sub.3 and MoO.sub.3; and B.sub.2O.sub.3 has a raw material of H.sub.3BO.sub.3.

14. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 12, wherein the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal has a trigonal system structure, a space group of P3.sub.121, and a unit cell parameters a=b; α=β=90°, γ=120°, Z=3.

15. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 14, wherein when Ln is equal to Eu and y is 0.1, a and b each are 6.8697 Å, and c is 6.7099 Å.

16. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 14, wherein when Ln is equal to Nd and y is 0.1, a and b each are 6.8769 Å, and c is 6.7204 Å.

17. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 10, wherein a crystal structure of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal comprises B—O groups, Si—O groups, and La—O groups; the B—O groups form a helical chain that extends along a c-axis by sharing oxygen atoms, and the La—O groups also form a helical chain that extends along the c-axis by sharing oxygen atoms; two B—O bonds in a B—O polyhedron are cleaved, and two 0 atoms bonded to B atoms are statistically distributed, resulting in local disordering permutation.

18. The β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal according to claim 10, wherein crystal growth is conducted at 700° C. to 1100° C., with a cooling rate of 0.5° C./d to 600° C./d; after the crystal growth is completed, an annealing rate is 240° C./d to 800° C./d; and the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal is grown with seed crystals at a crystal rotation rate of 5 rpm to 20 rpm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] FIG. 1 shows a micrograph of crystals β-La.sub.0.92Eu.sub.0.08BSiO.sub.5, β-La.sub.0.9Nd.sub.0.1BSiO.sub.5, β-La.sub.0.8Nd.sub.0.2BSiO.sub.5, and β-La.sub.0.85Y.sub.0.15BSiO.sub.5 grown in Examples 1 to 4;

[0020] FIG. 2 shows a photograph of a β-La.sub.0.9Nd.sub.0.1BSiO.sub.5 crystal grown in Example 5;

[0021] FIG. 3 shows a photograph of a β-La.sub.0.8Nd.sub.0.2BSiO.sub.5 crystal grown in Example 6;

[0022] FIG. 4 shows a photograph of a β-La.sub.0.82Y.sub.0.15Nd.sub.0.03BSiO.sub.5 crystal grown in Example 7;

[0023] FIG. 5 shows a photograph of a β-La.sub.0.8Y.sub.0.15Nd.sub.0.05BSiO.sub.5 crystal grown in Example 8;

[0024] FIG. 6 shows a photograph of a β-La.sub.0.85Eu.sub.0.1Nd.sub.0.05BSiO.sub.5 crystal grown in Example 9;

[0025] FIG. 7 shows a photograph of a β-La.sub.0.85Eu.sub.0.1Dy.sub.0.05BSiO.sub.5 crystal grown in Example 10;

[0026] FIG. 8 shows an X-ray diffraction (XRD) pattern of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystals grown in Example 1 to 10;

[0027] FIG. 9 shows a differential scanning calorimetry (DSC) pattern of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystals grown in Example 1 to 10;

[0028] FIG. 10 shows crystal structures of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystals grown in Example 1 to 10;

[0029] FIG. 11 shows a schematic diagram of B—O bond cleavage of the β-La.sub.1-yLn.sub.yBSiO.sub.5 crystals grown in Example 1 to 10;

[0030] FIG. 12 shows a polarized absorption spectrum of the β-La.sub.0.9Nd.sub.0.1BSiO.sub.5 crystal grown in Example 5;

[0031] FIG. 13 shows a polarized fluorescence spectrum of the β-La.sub.0.9Nd.sub.0.1BSiO.sub.5 crystal grown in Example 5;

[0032] FIG. 14 shows a fluorescence spectrum of the β-La.sub.0.8Y.sub.0.15Nd.sub.0.05BSiO.sub.5 crystal grown in Example 8;

[0033] FIG. 15 shows a polarized absorption spectrum of the β-La.sub.0.85Eu.sub.0.1Nd.sub.0.05BSiO.sub.5 crystal grown in Example 9;

[0034] FIG. 16 shows a polarized fluorescence spectrum of the β-La.sub.0.85Eu.sub.0.1Nd.sub.0.05BSiO.sub.5 crystal grown in Example 9;

[0035] FIG. 17 shows an excitation spectrum of the β-La.sub.0.85Eu.sub.0.1Dy.sub.0.05BSiO.sub.5 crystal grown in Example 10; and

[0036] FIG. 18 shows a fluorescence spectrum of the β-La.sub.0.85Eu.sub.0.1Dy.sub.0.05BSiO.sub.5 crystal grown in Example 10.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0037] To make the objectives, technical solutions, and advantages of the present disclosure clearer, the following further describes the present disclosure in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely intended to illustrate the present disclosure and are not intended to limit the present disclosure.

Example 1 Spontaneous Nucleation Growth of β-La.SUB.0.92.Eu.SUB.0.08.BSiO.SUB.5 .Crystal

[0038] 20 g in total of raw materials including La.sub.2O.sub.3, Eu.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.92Eu.sub.0.08)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.2:0.75:0.05:0.05 (mol), fully ground and mixed in an agate mortar and put into a platinum crucible; an obtained mixture was transferred to a high-temperature molten salt furnace, heated to 1,050° C. in an air atmosphere to melt the raw materials completely, and held for 24 h to make a melt reaction complete; a reaction product was cooled to 800° C. at 120° C./d, and rapidly annealed to room temperature after crystal growth was completed; a crystal was collected, washed and dried to obtain a transparent β-La.sub.0.92Eu.sub.0.08BSiO.sub.5 single crystal with a size of about 1.5 mm; the single crystal was determined to be a high temperature phase by X-ray diffraction.

Example 2 Spontaneous Nucleation Growth of β-La.SUB.0.9.Nd.SUB.0.1.BSiO.SUB.5 .Crystal

[0039] 30 g in total of raw materials including La.sub.2O.sub.3, Nd.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.9Nd.sub.0.1)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.1:0.8:0.1:0.025 (mol), fully ground and mixed in an agate mortar and put into a platinum crucible; an obtained mixture was transferred to a high-temperature molten salt furnace, heated to 1,050° C. in an air atmosphere to melt the raw materials completely, and held for 12 h to make a melt reaction complete; a reaction product was cooled to 750° C. at 240° C./d, and rapidly annealed to room temperature after crystal growth was completed; a crystal was collected, washed and dried to obtain a transparent β-La.sub.0.9Nd.sub.0.1BSiO.sub.5 single crystal with a size of about 1.6 mm; the single crystal was determined to be a high temperature phase by X-ray diffraction.

Example 3 Spontaneous Nucleation Growth of β-La.SUB.0.8.Nd.SUB.0.2.BSiO.SUB.5 .Crystal

[0040] 25 g in total of raw materials including La.sub.2O.sub.3, Nd.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.8Nd.sub.0.2)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.22:0.7:0.08:0.055 (mol), fully ground and mixed in an agate mortar and put into a platinum crucible; an obtained mixture was transferred to a high-temperature molten salt furnace, heated to 1,050° C. in an air atmosphere to melt the raw materials completely, and held for 15 h to make a melt reaction complete; a reaction product was cooled to 850° C. at 360° C./d, and rapidly annealed to room temperature after crystal growth was completed; a crystal was collected, washed and dried to obtain a transparent β-La.sub.0.8Nd.sub.0.2BSiO.sub.5 single crystal with a size of about 1.8 mm; the single crystal was determined to be a high temperature phase by X-ray diffraction.

Example 4 Spontaneous Nucleation Growth of β-La.SUB.0.85.Y.SUB.0.15.BSiO.SUB.5 .Crystal

[0041] 15 g in total of raw materials including La.sub.2O.sub.3, Y.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.85Y.sub.0.15)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.18:0.72:0.1:0.045 (mol), fully ground and mixed in an agate mortar and put into a platinum crucible; an obtained mixture was transferred to a high-temperature molten salt furnace, heated to 1,050° C. in an air atmosphere to melt the raw materials completely, and held for 36 h to make a melt reaction complete; a reaction product was cooled to 720° C. at 500° C./d, and rapidly annealed to room temperature after crystal growth was completed; a crystal was collected, washed and dried to obtain a transparent β-La.sub.0.85Y.sub.0.15BSiO.sub.5 single crystal with a size of about 1.2 mm; the single crystal was determined to be a high temperature phase by X-ray diffraction.

Example 5 Top-Seeded Solution Growth (TSSG) Method-Based Growth of β-La.SUB.0.9.Nd.SUB.0.1.BSiO.SUB.5 .Crystal

[0042] 120 g in total of raw materials were weighed according to the ratio of Example 2, melted and kept for 30 h, and crystal growth was conducted by a TSSG method; a rough crystal with a relatively desirable quality was grown using platinum wires as a seed crystal, and the rough crystal was used as a seed crystal and dropped to a point contacting a liquid surface at 1030° C.; and the crystal growth was conducted at 1° C./d and a crystal rotation rate of 8 rpm. After a 29-d growth cycle, the temperature was lowered to 1000° C., a crystal was collected, and annealed at 240° C./d to obtain a β-La.sub.0.9Nd.sub.0.1BSiO.sub.5 crystal with a size of 1.8 cm.sup.3×1.8 cm.sup.3×1.8 cm.sup.3; the crystal was determined to be a high temperature phase by X-ray diffraction.

Example 6 TSSG Method-Based Growth of β-La.SUB.0.8.Nd.SUB.0.2.BSiO.SUB.5 .Crystal

[0043] 100 g in total of raw materials were weighed according to the ratio of Example 3, melted and kept for 20 h, and crystal growth was conducted by a TSSG method; a rough crystal with a relatively desirable quality was grown using platinum wires as a seed crystal, and the rough crystal was used as a seed crystal and dropped to a point contacting a liquid surface at 990° C.; and the crystal growth was conducted at 0.5° C./d and a crystal rotation rate of 15 rpm. After a 40-d growth cycle, the temperature was lowered to 970° C., a crystal was collected, and annealed at 300° C./d to obtain a β-La.sub.0.8Nd.sub.0.2BSiO.sub.5 crystal with a size of 2.3 cm.sup.3×2.3 cm.sup.3×2 cm.sup.3; the crystal was determined to be a high temperature phase by X-ray diffraction.

Example 7 TSSG Method-Based Growth of β-La.SUB.0.82.Y.SUB.0.15.Nd.SUB.0.03.BSiO.SUB.5 .Crystal

[0044] 110 g in total of raw materials including La.sub.2O.sub.3, Y.sub.2O.sub.3, Nd.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.82Y.sub.0.15Nd.sub.0.03)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.15:0.75:0.1:0.0375 (mol), melted and kept for 22 h, and crystal growth was conducted by a TSSG method; a rough crystal with a relatively desirable quality was grown using platinum wires as a seed crystal, and the rough crystal was used as a seed crystal and dropped to a point contacting a liquid surface at 1000° C.; and the crystal growth was conducted at 1.5° C./d and a crystal rotation rate of 6 rpm. After a 29-d growth cycle, the temperature was lowered to 960° C., a crystal was collected, and annealed at 270° C./d to obtain a β-La.sub.0.82Y.sub.0.15Nd.sub.0.03BSiO.sub.5 crystal; the crystal was determined to be a high temperature phase by X-ray diffraction.

Example 8 TSSG Method-Based Growth of β-La.SUB.0.8.Y.SUB.0.15.Nd.SUB.0.05.BSiO.SUB.5 .Crystal

[0045] 125 g in total of raw materials including La.sub.2O.sub.3, Y.sub.2O.sub.3, Nd.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.8Y.sub.0.15Nd.sub.0.05)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.17:0.72:0.11:0.0475 (mol), melted and kept for 32 h, and crystal growth was conducted by a TSSG method; a rough crystal with a relatively desirable quality was grown using platinum wires as a seed crystal, and the rough crystal was used as a seed crystal and dropped to a point contacting a liquid surface at 985° C.; and the crystal growth was conducted at 1° C./d and a crystal rotation rate of 10 rpm. After a 35-d growth cycle, the temperature was lowered to 950° C., a crystal was collected, and annealed at 360° C./d to obtain a β-La.sub.0.8Y.sub.0.15Nd.sub.0.05BSiO.sub.5 crystal; the crystal was determined to be a high temperature phase by X-ray diffraction.

Example 9 TSSG Method-Based Growth of β-La.SUB.0.85.Eu.SUB.0.1.Nd.SUB.0.05.BSiO.SUB.5 .Crystal

[0046] 95 g in total of raw materials including La.sub.2O.sub.3, Eu.sub.2O.sub.3, Nd.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.85Eu.sub.0.1Nd.sub.0.05)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.15:0.76:0.09:0.0375 (mol), melted and kept for 24 h, and crystal growth was conducted by a TSSG method; a rough crystal with a relatively desirable quality was grown using platinum wires as a seed crystal, and the rough crystal was used as a seed crystal and dropped to a point contacting a liquid surface at 1015° C.; and the crystal growth was conducted at 1° C./d and a crystal rotation rate of 15 rpm. After a 37-d growth cycle, the temperature was lowered to 978° C., a crystal was collected, and annealed at 300° C./d to obtain a β-La.sub.0.85Eu.sub.0.1Nd.sub.0.05BSiO.sub.5 crystal; the crystal was determined to be a high temperature phase by X-ray diffraction.

[0047] Example 10 TSSG method-based growth of β-La.sub.0.85Eu.sub.0.1Dy.sub.0.05BSiO.sub.5 crystal

[0048] 100 g in total of raw materials including La.sub.2O.sub.3, Eu.sub.2O.sub.3, Dy.sub.2O.sub.3, H.sub.3BO.sub.3, SiO.sub.2, Li.sub.2CO.sub.3, and MoO.sub.3 were weighed according to a ratio of (La.sub.0.85Eu.sub.0.1Dy.sub.0.05)BO.sub.3:LiMoO.sub.4:SiO.sub.2:B.sub.2O.sub.3 at 0.15:0.7:0.15:0.0375 (mol), melted and kept for 26 h, and crystal growth was conducted by a TSSG method; a rough crystal with a relatively desirable quality was grown using platinum wires as a seed crystal, and the rough crystal was used as a seed crystal and dropped to a point contacting a liquid surface at 1010° C.; and the crystal growth was conducted at 0.5° C./d and a crystal rotation rate of 12 rpm. After a 45-d growth cycle, the temperature was lowered to 987° C., a crystal was collected, and annealed at 240° C./d to obtain a β-La.sub.0.85Eu.sub.0.1Dy.sub.0.05BSiO.sub.5 crystal; the crystal was determined to be a high temperature phase by X-ray diffraction.

[0049] The above described are merely specific implementations of the present disclosure, and the protection scope of the present disclosure is not limited thereto. Any modification or replacement easily conceived by those skilled in the art within the technical scope of the present disclosure should fall within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.