PLANAR BURIED OPTICAL WAVEGUIDES IN SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING

Abstract

A method of forming a semiconductor device may include providing semiconductor substrate having a substrate top side and a dielectric layer along the substrate top side and forming a first mask layer over the dielectric layer. The method may include forming a lower cladding wall and an upper cladding wall via a first opening in the first mask layer. The method may also include forming a second mask layer over the dielectric layer and forming side cladding walls via second openings in the second mask layer. Various semiconductor devices having a buried waveguide in formed via the method are also disclosed.

Claims

1. A method of fabricating a semiconductor device, the method comprising: providing a semiconductor substrate having a substrate top side and a dielectric layer along the substrate top side; forming a lower cladding wall in the semiconductor substrate via the substrate top side; forming an upper cladding wall in the semiconductor substrate via the substrate top side, wherein the upper cladding wall is above the lower cladding wall; and forming side cladding walls in the semiconductor substrate via the substrate top side, wherein the side cladding walls laterally flank the lower cladding wall and the upper cladding wall.

2. The method of claim 1, comprising forming the dielectric layer along the substrate top side.

3. The method of claim 1, comprising: forming a mask layer over the dielectric layer; wherein the forming the lower cladding wall comprises ion-implanting the lower cladding wall via an opening in the mask layer; and wherein the forming the upper cladding wall comprises ion-implanting the upper cladding wall via the opening in the mask layer.

4. The method of claim 1, comprising: forming a mask layer over the dielectric layer; and wherein the forming the side cladding walls comprises ion-implanting the side cladding walls via openings in the mask layer.

5. The method of claim 1, comprising: forming a first mask layer over the dielectric layer; removing the first mask layer from the dielectric layer; and after removing the first mask layer, forming a second mask layer over the dielectric layer; wherein the forming the lower cladding wall and the forming the upper cladding wall comprise ion-implanting the lower cladding wall and the upper cladding wall via a first opening in the first mask layer; and wherein the forming the side cladding walls comprises ion-implanting the side cladding walls via second openings in the second mask layer.

6. The method of claim 1, wherein the forming side cladding walls comprises ion-implanting using a range of energies such that each side cladding wall vertically spans from the lower cladding wall to the upper cladding wall.

7. A semiconductor device, comprising: a semiconductor substrate having a substrate top side and a waveguide buried in the substrate top side; wherein the waveguide comprises a doped lower cladding wall and a doped upper cladding wall above the doped lower cladding wall; and wherein the waveguide comprises doped side cladding walls that laterally flank the doped lower cladding wall and the doped upper cladding wall.

8. The semiconductor device of claim 7, wherein an index of refraction for each of the doped lower cladding wall, the doped upper cladding wall, and the doped side cladding walls differs from an index of refraction for the semiconductor substrate.

9. The semiconductor device of claim 7, wherein a density of free carriers for each of the doped lower cladding wall, the doped upper cladding wall, and the doped side cladding walls differs from a density of free carriers for the semiconductor substrate.

10. The semiconductor device of claim 7, wherein: the doped side cladding walls includes a first doped side cladding wall and a second doped side cladding wall; and the doped lower cladding wall spans from the first doped side cladding wall to the second doped side cladding wall.

11. The semiconductor device of claim 10, wherein the doped upper cladding wall spans from the first doped side cladding wall to the second doped side cladding wall.

12. The semiconductor device of claim 7, wherein: the doped side cladding walls include a first doped side cladding wall and a second doped side cladding wall; the first doped side cladding wall spans from the doped lower cladding wall to the upper doped cladding wall; and the second doped side cladding wall spans from the doped lower cladding wall to the upper doped cladding wall.

13. The semiconductor device of claim 12, wherein the first doped side cladding wall and the second doped side cladding wall extend below the doped lower cladding wall.

14. The semiconductor device of claim 12, wherein the first doped side cladding wall and the second doped side cladding wall extend to the substrate top side.

15. The semiconductor device of claim 12, wherein the substrate top side is planar over the waveguide.

16. The semiconductor device of claim 7, comprising: a cleaved facet at a lateral side of the semiconductor substrate; and wherein an output end of the waveguide extends to the cleaved facet.

17. The semiconductor device of claim 7, wherein the waveguide comprises a portion of a modulator.

18. The semiconductor device of claim 7, wherein the waveguide comprises a portion of a filter.

19. The semiconductor device of claim 7, wherein the waveguide comprises a portion of a phase shifter.

20. The semiconductor device of claim 7, wherein the waveguide comprises a portion of a Mach-Zehnder modulator.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The various features and advantages of the present disclosure may be more readily understood with reference to the following detailed description taken in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements.

[0008] FIG. 1 provides a perspective view of a semiconductor device comprising an optical waveguide buried in a planar surface of a semiconductor substrate.

[0009] FIG. 2 provides a cross-section view of the semiconductor device of FIG. 1.

[0010] FIGS. 3A-3F depict a process for manufacturing the semiconductor device of FIGS. 1 and 2.

[0011] FIG. 4 provides top views and edge views of cleaved faceted and window faceted laser devices manufactured per the process of FIGS. 3A-3F.

[0012] FIG. 5 provides a top view and a cross-section view of a vertical grating coupler manufactured per the process of FIGS. 3A-3F.

[0013] FIG. 6 provides top views and side views for a p-n junction phase shifter, a thermal-optical phase shifter, a p-n micro-ring modulator, and a tunable micro-ring wavelength-division multiplexing (WDM) filter.

[0014] FIG. 7 provides top views for a waveguide Mach-Zehnder modulator and a micro-ring Mach-Zehnder modulator.

[0015] FIG. 8 provides a table depicting properties for various semiconductor materials.

DESCRIPTION

[0016] The following discussion presents various aspects of the present disclosure by providing examples thereof. Such examples are non-limiting, and thus the scope of various aspects of the present disclosure should not necessarily be limited by any particular characteristics of the provided examples. In the following discussion, the phrases for example, e.g., and exemplary are non-limiting and are generally synonymous with by way of example and not limitation, for example and not limitation, and the like.

[0017] As utilized herein, and/or means any one or more of the items in the list joined by and/or. As an example, x and/or y means any element of the three-element set {(x), (y), (x, y)}. In other words, x and/or y means one or both of x and y. As another example, x, y, and/or z means any element of the seven-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}. In other words, x, y and/or z means one or more of x, y, and z.

[0018] The terminology used herein is for the purpose of describing particular examples only and is not intended to be limiting of the disclosure. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms comprises, includes, comprising, including, has, have, having, and the like when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

[0019] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, for example, a first element, a first component or a first section discussed below could be termed a second element, a second component or a second section without departing from the teachings of the present disclosure. Similarly, various spatial terms, such as upper, lower, side, and the like, may be used in distinguishing one element from another element in a relative manner. It should be understood, however, that components may be oriented in different manners, for example a semiconductor device or package may be turned sideways so that its top surface is facing horizontally and its side surface is facing vertically, without departing from the teachings of the present disclosure.

[0020] In the drawings, the thickness or size of layers, regions, and/or components may be exaggerated for clarity. Accordingly, the scope of this disclosure should not be limited by such thickness or size. Additionally, in the drawings, like reference numerals may refer to like elements throughout the discussion. Elements numbered with an apostrophe (') can be similar to correspondingly numbered elements without an apostrophe.

[0021] Unless specified otherwise, the term coupled may be used to describe two elements directly contacting each other or describe two elements indirectly connected by one or more other elements. For example, if element A is coupled to element B, then element A can be directly contacting element B or indirectly connected to element B by an intervening element C. Similarly, the terms over or on may be used to describe two elements directly contacting each other or describe two elements indirectly connected by one or more other elements.

[0022] Referring now to FIGS. 1 and 2, a semiconductor device 10 comprising a semiconductor substrate 100 and a planar optical waveguide 200 buried in the semiconductor substrate 100 are shown. In particular, the semiconductor substrate 100 may have a refractive index n.sub.0 and a carrier density of C.sub.0. As will be explained in greater detail below with regard to FIGS. 3A-3F, the waveguide 200 and its walls 210, 220, 230, 240 may be highly doped regions through diffusion, ion implantation, or selective growth and planarization techniques. To this end, the crystal composition of the semiconductor substrate 100 may be modified to reduce its refractive index by free carriers from high concentration of dopants (e.g., aluminum or nitrogen in SiC). In particular, the refractive index may be reduced by free carriers per equation (1):

[00001]$\begin{array}{cc}{n}_i=n_0-n_i;n_{i}f\left(\frac{\mathrm{Ci}-C0}{n0}\right)& \left(1\right)\end{array}$

where: [0023] n.sub.1: refractive index of the cladding region [0024] n.sub.0: refractive index of substrate [0025] C.sub.0: residual free carrier density of substrate [0026] C.sub.i: free carrier density of the cladding region.
Such regions may experience low optical loss when photon frequency is above the plasma frequency of carriers and below the bandgap absorption frequency of the waveguide materials (e.g., 1,300/1,500 nm in highly doped SiC.)

[0027] See, Bennet, et. al., IEEE, J. Quantum Elec., 26, 113 (1990) and Bosma, et al., J. Appl. Phys. 131, 025703 (2022), the contents of which are hereby incorporated by reference in their entirety.

[0028] Referring now to FIGS. 3A-3F, a process for fabricating the semiconductor device 10 of FIGS. 1-2 is shown. The highly doped regions may be formed by introducing the dopants of high concentration with an exemplified planar ion implantation process, while other planar selective doping processes such as diffusion or selective growth may also be used. At FIG. 3A, a semiconductor substrate 100 having a refractive index n.sub.0 is provided. The semiconductor substrate 100 may include a substrate top side 101, a substrate bottom side 102 opposite the substrate top side 101, and substrate lateral sides 103 between the substrate top side 101 and the substrate bottom sides 102. Moreover, a dielectric layer 110 may be formed on the substrate top side 101. In various embodiments, the dielectric layer 110 may be formed via a deposition process.

[0029] As shown in FIG. 3B, a first mask layer 120 having an opening 122 may be formed on the dielectric layer 110. In various embodiments, the first mask layer 120 may be formed on the dielectric layer 110 through deposition and/or other techniques. Further, the openings 122 may be formed via photolithography, laser ablation, and/or other processes.

[0030] As further shown in FIG. 3B, a lower cladding wall 210 of the waveguide 200 may be formed in the semiconductor substrate 100 via ion-implantation or another doping process. For example, a deep ion-implantation may implant ions through the opening 122 and form a doped horizontal region having a refractive index of n.sub.2. This doped horizontal region may provide the lower cladding wall 210 of the waveguide 200.

[0031] As shown in FIG. 3C, an upper cladding wall 220 of the waveguide 200 may be formed in the semiconductor substrate 100 via ion-implantation or another doping process in a similar manner as the lower cladding wall 210. For example, a shallow ion-implantation process may implant ions through the same opening 122 used to form the lower cladding wall 210. The implanted ions may form a doped horizontal region above the lower cladding wall 210 that has a refractive index of n.sub.1. This doped horizontal region may provide the upper cladding wall 220 of the waveguide 200. In some embodiments, the shallow ion-implantation process imparts the implanted ions with less energy than the deep ion-implantation process thus resulting in the ions of the shallow ion-implantation process not being implanted as deeply into the substrate top side 101.

[0032] As shown in FIG. 3D, the first mask layer 120 of FIGS. 3B and 3C may be removed and replaced with a second mask layer 130 having openings 132, 134. For example, the first mask layer 120 may be removed via etching, grinding, and/or some other means. Further, the second mask layer 130 may be formed on the dielectric layer 110 through deposition and/or other techniques. Further, the openings 132, 134 may be formed via photolithography, laser ablation, and/or other processes.

[0033] Via such openings 132, 134, the side cladding walls 230, 240 of the waveguide 200 may be formed via ion-implantation or another doping process. For example, ions may be implanted at various depths in the semiconductor substrate 100 via such openings 132, 134. Through multiple ion-implantations via openings 132, 134, doped vertical regions having refractive indices of n.sub.3 and n.sub.4 may be formed. In various embodiments, the multiple ion-implantations may span a range of energies so as to implant ions across a range of depths into the substrate top side 101 to form the doped vertical regions. These doped vertical regions may provide the side cladding walls 230, 240 of the buried waveguide 200. As shown, the side cladding walls 230, 240 may laterally flank both the lower cladding wall 210 and the upper cladding wall 220 such that the lower cladding wall 210 and upper cladding wall 220 are positioned between the side cladding walls 230, 240. In the depicted embodiment, the lower cladding wall 210 and upper cladding wall 220 may span or otherwise traverse from one side cladding wall 230 to the other side cladding wall 240. Similarly, the side cladding walls 230, 240 may span or otherwise traverse from the lower cladding wall 210 to the upper cladding wall 220.

[0034] The second mask layer 130 of FIG. 3D may be removed as shown at FIG. 3E and the semiconductor device 10 may be annealed to activate free carriers in the doped regions. For example, the second mask layer 130 may be removed via etching, grinding, and/or some other means. After such annealing, the dielectric layer 110 may be removed. Again, the dielectric layer 110 may be removed via etching, grinding, and/or some other means to achieve the semiconductor device of FIGS. 1 and 2. Of note, it should be appreciated that the substrate top side 101 of the semiconductor device 10 as a result of the process of FIGS. 3A-3F may remain a planar surface. Such planarity may prove conducive to the subsequent formation of other structures over the waveguide 200 such as, for example, conductive pads or contacts as shown in FIGS. 4-7.

[0035] FIGS. 4-7 depict various semiconductor devices, which may be manufactured per the process of FIGS. 3A-3F so as to obtain semiconductor devices that each have a planar upper surface and a buried waveguide that comprises at least a portion of the respective optical structure. In particular, FIG. 4 provides top views and edge views of cleaved faceted and window faceted laser devices. As shown, a cleaved faceted laser device may comprise a buried waveguide 200 in which an output end of the waveguide 200 extends to a cleaved facet 260 that emits a laser output from a substrate lateral side 103 of the semiconductor substrate 100. Conversely, the window faceted laser device may comprise a buried waveguide 200 in which an output end of the waveguide 200 extends toward but short of a substrate lateral side 103 to emit a laser output from the substrate lateral side 103 via a window facet 261.

[0036] FIG. 5 provides a top view and a cross-section view of a buried waveguide 200 with a vertical grating coupler 270. As shown, the vertical grating coupler 270 may direct a laser output of the waveguide 200 toward the substrate top side 101. As such, the laser device of FIG. 5 may emit laser output from the substrate top side 101 instead of a substrate lateral side.

[0037] FIG. 6 provides top views and side views for a p-n junction phase shifter, a thermal-optical phase shifter, a p-n micro-ring modulator, and a tunable micro-ring wavelength-division multiplexing (WDB) filter. FIG. 7 provides top views for a waveguide Mach-Zehnder modulator and a micro-ring Mach-Zehnder modulator. As shown by the structures depicted in FIGS. 6 and 7, the process of FIGS. 3A-3F may be used to form cladding walls 210, 220, 230, 240 of the waveguides 200 and/or other structures of various geometric arrangements. To this end, the first mask layer 120 and/or the second mask layer 130 may be patterned to provide suitable openings for forming the cladding walls 210, 220, 230, 240 per the respective geometric arrangements.

[0038] Finally, FIG. 8 depicts properties for various semiconductor materials which may be suitable for semiconductor substrate 100 of FIGS. 1-7.

[0039] The present disclosure includes reference to certain examples, however, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the disclosure. In addition, modifications may be made to the disclosed examples without departing from the scope of the present disclosure. Therefore, it is intended that the present disclosure not be limited to the examples disclosed, but that the disclosure will include all examples falling within the scope of the appended claims.