METHOD FOR REMOVING A CONTAMINATION LAYER BY AN ATOMIC LAYER ETCHING PROCESS

Abstract

A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.

Claims

1. Method for at least partially removing a contamination layer from an optical surface of an optical element that reflects extreme ultraviolet (EUV) radiation, comprising: taking the optical element from a selected optical arrangement in which the optical surface of the optical element is exposed to EUV radiation; subsequent to said taking step, performing an atomic layer etching process for at least partially removing the contamination layer from the optical surface, wherein said performing step comprises: in a surface modification step, exposing the contamination layer to a surface-modifying reactant, and in a material detachment step, exposing the contamination layer to a material-detaching reactant; and subsequent to said performing step, installing the optical element in a further optical arrangement.

2. Method according to claim 1, wherein the selected optical arrangement is the further optical arrangement.

3. Method according to claim 1, wherein said taking step comprises removing the optical element from an EUV lithography system in which the optical surface of the optical element is exposed to the EUV radiation.

4. Method according to claim 1, wherein said installing step comprises installing the optical element in a further EUV lithography system, in which the optical surface of the optical element is exposed to the EUV radiation.

5. Method according to claim 1, wherein the atomic layer etching process is performed in an atomic layer etching apparatus.

6. Method according to claim 1, wherein the atomic layer etching process comprises a spatial atomic layer etching process.

7. Method according to claim 1, wherein the contamination layer contains at least one chemical element selected from the group comprising: Zn, Sn, P, As, B, Si, In, Pb, Mg, Na, Ge, Cu, Ag, and Au.

8. Method according to claim 1, wherein the contamination layer is at least partially removed from a capping layer of a reflective coating forming the optical surface of the reflective optical element.

9. Method according to claim 1, wherein, in the surface modification step, the surface-modifying reactant comprises oxygen (O.sub.2) and wherein, in the material detachment step, the material-detaching reactant comprises hydrogen (H.sub.2).

10. Method according to claim 1, wherein, in the surface modification step, the surface-modifying reactant comprises at least one of a hydrocarbon and a halogen, and wherein, in the material detachment step, the material-detaching reactant comprises hydrogen (H.sub.2).

11. Method according to claim 10, wherein, in the surface modification step, the surface-modifying reactant comprises at least one of chlorine, arsenic and boron.

12. Method according to claim 1, wherein, in the surface modification step, the surface-modifying reactant comprises an organic compound, and wherein, in the material detachment step, the material-detaching reactant comprises oxygen (O.sub.2).

13. Method according to claim 12, wherein the organic compound comprises acetylacetone.

14. Method according to claim 1, wherein at least one of the surface modification step and the material detachment step is plasma-assisted.

15. Method according to claim 14, further comprising generating the plasma in an atomic layer etching head.

16. Method according to claim 15, wherein said generating comprises generating the plasma at a pressure between 100 mbar and 2000 mbar.

17. Method according to claim 15, wherein the plasma is generated in a dielectric barrier discharge plasma source of the atomic layer etching head.

18. Method according to claim 14, wherein, in the surface modification step, the surface-modifying reactant comprises oxygen (O.sub.2) supplied to the contamination layer as a gas composition comprising at least one of O.sub.2, N.sub.2O, H.sub.2O, H.sub.2O.sub.2 added to a carrier gas.

19. Method according to claim 14, wherein, in the material detachment step , the material-detaching reactant, comprises hydrogen (H.sub.2) supplied to the contamination layer as a gas composition comprising at least one of H.sub.2, NH.sub.3 or hydrocarbons added to a carrier gas.

20. Method according to claim 1, further comprising producing a temperature change (T.sub.u, T.sub.d) between the surface modification step and the material detachment step.

21. Method according to claim 20, wherein the temperature change (T.sub.u, T.sub.d) between the surface modification step and the material detachment step is greater than +/100 K/s.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Exemplary embodiments are represented in the schematic drawing and are explained in the following description. In the drawing:

[0043] FIG. 1 shows a schematic illustration of an EUV lithography apparatus having a plurality of reflective optical elements, of which one is taken from the EUV lithography apparatus,

[0044] FIG. 2 shows a schematic illustration of an atomic layer etching apparatus with a process chamber in which the optical element is arranged for removing a contamination layer,

[0045] FIG. 3 shows a schematic illustration of an atomic layer etching apparatus in the form of an atomic layer etching head for performing a spatial atomic layer etching process, and

[0046] FIG. 4 shows a schematic illustration of an exemplary temperature profile of the spatial atomic layer etching process of FIG. 3.

DETAILED DESCRIPTION

[0047] In the following description of the drawings, identical reference signs are used for identical or functionally analogous components.

[0048] FIG. 1 schematically shows an EUV lithography apparatus 1, which has a beam-shaping system 2, an illumination system 3 and a projection system 4, which are accommodated in separate vacuum housings 2a, 3a, 4a and are arranged successively in the beam path of EUV radiation 6, which emanates from an EUV light source 5 of the beam-shaping system 2. A plasma source or a synchrotron can serve for example as the EUV light source 5. The radiation emerging in the wavelength range between about 5 nm and about 20 nm is first concentrated in a collimator 7. With the aid of a downstream monochromator 8, the desired operating wavelength is filtered out by variation of the angle of incidence, as is indicated by a double-headed arrow. In the stated wavelength range, the collimator 7 and the monochromator 8 are usually embodied as reflective optical elements, wherein at least the monochromator 8, on its optical surface 8a, has no multilayer system, in order to reflect a wavelength range having the greatest possible bandwidth.

[0049] The EUV radiation 6 manipulated in the beam-shaping system 2 with regard to wavelength and spatial distribution is introduced into the illumination system 3, which has a first and a second reflective optical element 9, 10. The two reflective optical elements 9, 10 guide the EUV radiation 6 to a photomask 11 as a further reflective optical element. The photomask 11 has a structure which is imaged onto a wafer 12 at a reduced scale by the projection system 4. For this purpose, a first and a second reflective optical element 13, 14 are also provided in the projection system 4. The reflective optical elements 9, 10, 11, 13, 14 each have an optical surface 9a, 10a, 11a, 13a, 14a. These optical surfaces are arranged in the beam path of the EUV lithography apparatus 1 and are thus exposed to the EUV radiation 6.

[0050] As can be seen in FIG. 1, provided on the second optical element 14 of the projection system 4 is a cleaning unit in the form of two cleaning heads 18a,b for directing two cleaning gas jets 19a,b containing atomic hydrogen e.g. in the form of hydrogen radicals, ions and/or molecular hydrogen in an excited electron state onto the optical surface 14a of the optical element 14. By cleaning with atomic hydrogen, it is in particular possible to remove carbon contaminations from the optical surface 14a of the optical element 14.

[0051] During the cleaning with the atomic hydrogen, the atomic hydrogen also comes into contact with components (not illustrated in the figure) that are arranged in the respective vacuum housing 2a, 3a, 4a and have chemical elements that, in the presence of atomic hydrogen, form highly volatile hydrides. Examples of such elements are tin (Sn), zinc (Zn), phosphorus (P), arsenic (As), boron (B), silicon (Si), lead (Pb), indium (In), magnesium (Mg), sodium (Na) and fluorine (F). The volatile hydrides of these and possibly other chemical elements, such as germanium (Ge), and (semi-)noble metals, in particular copper (Cu), silver (Ag), and gold (Au), gas out of the components, e.g. sensors or the like, which is also referred to as hydrogen-induced outgassing. The corresponding outgassing products which are passed to the vacuum environment deposit on the reflective optical elements 9, 10, 11, 13, 14, more specifically on the optical surfaces 9a, 10a 11a, 13a, 14a thereof, and form a (thin) contamination layer, which cannot be easily removed from the respective optical surface 9a, 10a, 11a, 13a, 14a by atomic hydrogen cleaning.

[0052] It may be possible to remove the contamination layer 24 using an atomic layer etching process that is performed in-situ in the EUV lithography apparatus 1. For this purpose, the two cleaning heads 18a,b of the optical surface 14a shown in FIG. 1 can supply, in alternating fashion, in each case a pulsed gas jet 19a,b containing H.sub.2 and O.sub.2, respectively, or other oxidizing or reducing gases. It is favourable if the (local) streams of O.sub.2 and H.sub.2 gas 19a,b are supplied to the optical surface 14 substantially at atmospheric pressure, as is typically the case during a break in operation of the EUV lithography apparatus 1, during which the respective housings 2a, 3a, 4a are typically not evacuated. It is likewise advantageous if a laminar gas flow is formed at the optical surface 14a of the reflective optical element 14.

[0053] In an in-situ atomic layer etching process such as this, it is, however, typically necessary to isolate the region in which the atomic layer etching process is performed from the remaining (vacuum) environment with respect to gas pressure and gas hydrodynamics. It is also possible for the gas flow(s) and the conductivity of the plasma that is prevailing in the vacuum environment to be disturbed by the local streams of gas 19a,b. Assuming that the cleaning heads 18a,b are appropriately arranged, it is, however, also possible to perform an atomic layer etching process during the operation of the EUV lithography apparatus 1. However, due to the problems which were described further above, it is generally more advantageous if the atomic layer etching process is performed ex-situ, i.e. in an atomic layer etching apparatus 21 which is provided specifically for this purpose and will be described in detail below.

[0054] Since the presence of a contamination layer having a thickness which is too great results in a significant reduction of the reflectance of the reflective optical elements 9, 10, 11, 13, 14 and possibly to a deterioration of the imaging properties of the projection system 4, the EUV lithography apparatus 1 shown in FIG. 1 is embodied to allow removal of the reflective optical elements 13, 14 of, at least, the projection system 4. In this way, a respective reflective optical element 14, which has a contamination layer, can be removed from the EUV lithography apparatus 1 and be replaced by a new reflective optical element 14, which does not have a contamination layer, as is shown in FIG. 1 by way of example for the second reflective optical element 14 of the projection system 4.

[0055] For the replacement of the reflective optical element 14, in the example shown in FIG. 1, an opening 20 that is closable in a vacuum-tight manner is provided in the vacuum housing 4a of the projection system 4. The reflective optical element 14 is accessible from outside the vacuum housing 4a of the projection system 4 through the opening 20 and can be detached from a holder to which the reflective optical element 14 is releasably attached in the vacuum housing 4a, for example by way of a screw connection. After the reflective optical element 14 is detached from the holder, it is taken from the vacuum housing 4a and replaced by the new reflective optical element 14, as is indicated in FIG. 1 by way of a double-headed arrow. It is to be understood that such a replacement can also be performed in the case of the other reflective optical elements 9, 10, 11, 13 of the EUV lithography apparatus 1, for which purpose a plurality of openings may be provided in the corresponding vacuum housings 2a, 3a, 4a.

[0056] To perform the replacement, it is generally required to break the vacuum in the corresponding vacuum housings 2, 3, 4. The replacement can possibly also be performed by way of a vacuum lock. In this case, the reflective optical element 14 is typically detached from the holder and transported into the vacuum lock using a transport device in automated fashion, from which the reflective optical element 14 can be taken out in automated fashion using a further transport device or possibly be taken out manually and be replaced by the new reflective optical element 14.

[0057] The reflective optical element 14 that has been removed from the EUV lithography apparatus 1 is transported manually or possibly likewise in automated fashion into an atomic layer etching apparatus 21, which is shown in FIG. 2, to remove as completely as possible the contamination layer 24, which is illustrated in FIG. 2. The optical element 14, which is shown in detail in FIG. 2, has a substrate 22, on which a reflective multilayer coating 23 is arranged, which has layers of molybdenum and silicon in alternation, the thicknesses of which are matched to one another such that, at the operating wavelength of the EUV lithography apparatus 1 of approximately 13.5 nm, as high a reflectance as possible is achieved. The optical surface 14a is formed on the top side of a capping layer 25 of the reflective coating 23, which in the example shown is made from Ru. As a result of the continuous use of the reflective optical element 14 in the exposure operation of the EUV lithography apparatus 1 of FIG. 1, the contamination layer 24 has formed on the capping layer 25, wherein the contamination layer 24 includes Sn in the example shown, but can also include other chemical elements, e.g. Zn, P, As, B, Si, Pb, In, Mg, Na, F, Ge, metals such as Cu, Ag, Au, etc., which cannot be removed, or can be removed only with great difficulty, in the case of in-situ cleaning in the EUV lithography apparatus 1.

[0058] To remove the contamination layer 24 by way of an atomic layer etching process, the atomic layer etching apparatus 21 shown in FIG. 2 has a process chamber 26, in the interior space 27 of which a holder 28 is arranged on which the reflective optical element 14 is stored during the etching process. Both the holder 28 and the walls of the process chamber 26 can be heated to (possibly different) temperatures. The holder 28 can be connected to a motor so as to cause the reflective optical element 14 to perform a rotational movement during the atomic layer etching process. The atomic layer etching apparatus 21 also comprises a container 30, which contains what is known as a precursor or reactant, which is gaseous oxygen O.sub.2 in the present example. A further container 31 serves for providing gaseous hydrogen H.sub.2, which likewise serves as a reactant in the atomic layer etching process.

[0059] Both the oxygen O.sub.2 and the hydrogen H.sub.2 can be introduced into the process chamber 26 in each case by a controllable inlet in the form of a controllable valve 32a, 32b. Arranged in the process chamber 26 is a distribution manifold 33 for distributing the incoming gas as homogeneously as possible in the direction of the reflective optical element 14. A purge gas, e.g. argon, can also be supplied to the process chamber 26 via the controllable valves 32a, 32b in order to purge the process chamber 26 and the respective supply lines. Another controllable valve 34, which forms a gas outlet, is connected to a vacuum pump 35 for removing the respective gases from the process chamber 26.

[0060] To monitor the residual gas atmosphere in the process chamber 26, a first process gas analyser 36a is flange-mounted to the process chamber 26. A second process gas analyser 36b for monitoring the residual gas is arranged in an extracting line behind the outlet valve 34. Both the first and the second process gas analysers 36a, 36b serve for the detection or the determination of the amount or of the partial pressure of at least one gaseous component that is contained in the residual gas atmosphere of the process chamber 26 (or, in the case of the process gas analyser 36b, was contained in the process chamber 26).

[0061] For removing the contamination layer 24 from the optical surface 14a of the reflective optical element 14, the following procedure is performed: First, in a surface modification step, the precursor or the surface-modifying reactant in the form of oxygen O.sub.2 is supplied to the process chamber 26 via the first valve 32a. At the same time, a plasma is generated in the process chamber 26 by way of a plasma generating device (not illustrated in more detail), for example in the form of a microwave plasma generating device, to amplify the reaction of the oxygen O.sub.2 with the Sn on the surface of the contamination layer 24. For the plasma generation, for example the optical element 14 or the holder 28 can be electrically isolated from the rest of the process chamber 26, and a high-frequency alternating electromagnetic field (HF bias) can be applied to the holder 28. Ions are formed in the plasma which are incident on the contamination layer 24 and in this way amplify the reaction of the oxygen O.sub.2 with the Sn on the surface of the contamination layer 24. Due to the oxygen O.sub.2, the metallic Sn is converted to SnO.sub.x.

[0062] Subsequently, the first valve 32a is switched over, and an (inert) purge gas is supplied to the process chamber 26 via the first valve 32a. The latter is extracted together with the residual oxygen O.sub.2 and any other gaseous components using the vacuum pumps 35 via the opened exit valve 34.

[0063] After purging, the exit valve 34 is closed and, in a material detachment step, hydrogen H.sub.2 is introduced into the process chamber 26 via the second valve 32b. The (molecular) hydrogen H.sub.2 is converted, by way of the plasma generating device, to hydrogen radicals or hydrogen ions, which react at the exposed surface of the contamination layer 24 with the SnO.sub.x to form a hydride (e.g. SnH.sub.4), which detaches from the contamination layer 24 and transitions to the gas phase. It may be possible for the hydrogen H.sub.2 to be introduced into the process chamber 26 already in activated form, for example by guiding it past a hot filament. Such a filament or activation device for the hydrogen H.sub.2 may also be provided in the process chamber 26 itself. It may also be possible for an inert gas, e.g. argon, to be supplied to the process chamber 26 to amplify the reaction with the activated hydrogen.

[0064] After the detachment step, the process chamber 26 is once again purged using the purge gas, which is supplied to the process chamber 26 via the second valve 32b and is extracted together with the residual hydrogen and with the reaction products that formed during the detachment using the vacuum pump 35 when the exit valve 34 is opened. In the above-described cycle, one or more monolayers of the contamination layer 24 is/are stripped away and removed from the optical surface 14a.

[0065] After the outlet valve 34 is closed, this cycle is repeated several times, to be precise until the contamination layer 24 has been removed as completely as possible from the optical surface 14a.

[0066] The time period during which the oxygen O.sub.2 is supplied in the surface modification step, the time period during which hydrogen H.sub.2 is supplied in the material detachment step, and the time period of the purging are typically in the region of seconds. A control device 37 serves for actuating the valves 32a, 32b, 34 to switch between the above-described steps of the atomic layer etching process. The control device 37 additionally serves for actuating a further valve 38, which connects the first process gas analyser 36a to the process chamber 26. It is to be understood not only that the control device 37 can switch the valves 32a, 32b, 34, 38 between an open position and a closed position, but also that the mass flow through the respective valves 32a, 32b, 34, 38 can be controlled using the electronic control device 37.

[0067] The redox reaction of Sn described in connection with FIG. 2 is particularly advantageous for the removal of the contamination layer 24, because it has been shown that it is significantly easier to detach SnO.sub.x from the contamination layer 24 using hydrogen ions or using hydrogen radicals than is the case with metallic Sn. Complete removal of the contamination layer 24 and thus termination of the atomic layer etching process can be detected by way of the two process gas analysers 36a, 36b, for example when the detected Sn concentration strongly decreases or when the Ru material of the capping layer 25 is detected. For exemplary implementations of the process gas analysers 36a, 36b, reference is made to WO 2009/059614 A1, which was cited in the introductory part and the entirety of which is incorporated into the content of this application by reference.

[0068] While FIG. 2 shows a conventional atomic layer etching apparatus 21, in which the surface modification step and the material detachment step are performed successively in time, in the atomic layer etching apparatus 21 shown in FIG. 3, which has an atomic layer etching head 41, spatial atomic layer etching of the contamination layer 24 is performed. The atomic layer etching head 41 is arranged in a process chamber which is not illustrated in FIG. 3. The atomic layer etching head 41 in the example shown has a first supply device 42 for supplying a surface-modifying reactant 44 to the contamination layer 24 and a second supply device 43 for supplying a layer-detaching reactant 45 to the contamination layer 24. The atomic layer etching head 41 also has purge gas supply devices 46 for supplying an inert purge gas 47 into the intermediate space between the atomic layer etching head 41 and the first and second supply devices 42, 43. The purge gas supply devices 46 can be used to laterally delimit the region in which the surface-modifying reactant 44 is incident on the contamination layer 24 and also the region in which the layer-detaching reactant 45 is incident on the contamination layer 24. Thereafter, the purge gas 47 together with the respective reactants 44, 45 are extracted from the intermediate space between the atomic layer etching head 41 and the contamination layer 24 by way of extraction devices 48.

[0069] The purge gas 47 can also serve for producing a floating, i.e. frictionless air bearing facilitated movement of the atomic layer etching head 41 in the manner of an air cushion, such that the atomic layer etching head 41 can be positioned at a desired distance from the optical surface 14a or the contamination layer 24. The desired distance may be in a range from e.g. 0.02 mm to 0.2 mm. For details concerning possible implementations of an atomic layer etching head 41, reference is made to US 2013/0118895 A1, which was cited further above and the entirety of which is incorporated into the content of this application by reference.

[0070] The atomic layer etching head 41 can be moved over the surface 14a of the reflective optical element 14 by way of movement devices (not illustrated in more detail), as is indicated by way of a double-headed arrow in FIG. 3. Alternatively or additionally, the optical element 14 can also be moved, in particular displaced, by way of suitable movement devices. The surface modification step by way of the surface-modifying reactant 44 and the layer detachment step by way of the layer-detaching reactant 45 are performed in the example shown in FIG. 3 at the same time at different locations or regions of the contamination layer 24. However, by moving the atomic layer etching head 41 over the optical surface 14a, the surface modification step and the layer detachment step take place in one and the same location of the optical surface 14a in a temporally successive fashion. Since purging by way of the purge gas 47 is also performed at the same time, the time interval between the two successive steps of the atomic layer etching process is also short.

[0071] The surface-modifying reactant 44 used in the first surface modification step can be, for example, oxygen or a halogen, in particular chlorine, more specifically chlorine gas. The chlorine gas makes it possible to chlorinate chemical elements present in the contamination layer 24, such as for example Sn, i.e. convert them into a chloride. Alternatively or additionally, the surface-modifying reactant 44 can also be a hydrocarbon, e.g. methane, or a mixture of hydrocarbons so as to effect a methylation of the contaminating substances, e.g. of Sn contained in the contamination layer 24. Alternatively or additionally, the surface-modifying reactant 44 can also be an organic compound, more specifically a -diketone, for example acetylacetone, reacting with the Sn (or other metals) to form a volatile metal complex by chelation.

[0072] In the subsequent layer detachment step, hydrogen H.sub.2 is typically used as the reactant 45 to produce layer stripping of one or more atomic layers of the contamination layer 24. Both the first and the second step can be assisted by plasma, e.g. by using a high-frequency electromagnetic alternating field (HF bias), a microwave plasma, or a Dielectric Barrier Discharge (DBD). The plasma can be generated in a plasma source which is integrated into the atomic layer etching head 41. In this way, the plasma is generated at a very proximate distance to the contamination layer 24, thus enhancing the radical yield and thus the etch rate, in particular when the pressure in the gap between the atomic layer etching head 41 and the contamination layer 24 is close to atmospheric pressure, e.g. in a range from 100 mbar to 2000 mbar, which allows to effectively separate the reductive and oxidative treatment steps.

[0073] In the present example, the atomic layer etching head 41, more specifically the first supply device 42 and the second supply device 43, are both embodied as a Dielectric Barrier Discharge (DBD) plasma source: The supply devices 42, 43 each have two cylindrical electrodes with a cylindrical dielectric barrier arranged in-between, the surface-modifying reactant 44, resp., the layer-detaching reactant 45 passing through the cylindrical space between the electrodes of the first/second supply device 42, 43 when they are supplied to the contamination layer 24. In this case, inert gases such as e.g. N.sub.2, Ar, He, Xe, . . . can be added to the plasma as a carrier gas in order to increase the energy of the ions or free radicals in the plasma and, consequently, their momentum transfer to the material of the contamination layer 24.

[0074] When the surface modification step uses oxygen as the surface-modifying reactant 44, the oxygen may be supplied to the contamination layer 24 via the first supply device 42 as a gas composition comprising at least one of O.sub.2, N.sub.2O, H.sub.2O, H.sub.2O.sub.2 added to the carrier gas. For instance, the gas composition/mixture can comprise a fraction of 0.5% (vol.) to 5% (vol.) of O.sub.2, resp., of the O.sub.2-containing species in a (plasma) carrier gas, e.g. N.sub.2 or Ar, He, Xe, . . . to form OH radicals.

[0075] When the material detachment step uses hydrogen as the material-detaching reactant 45, the hydrogen may be supplied to the contamination layer 24 via the second supply device 43 as a gas composition comprising at least one of H.sub.2, NH.sub.3 or hydrocarbons added to the carrier gas. For instance, the gas composition/mixture may comprise a fraction of 5% (vol.) to 50% (vol.) of H.sub.2, resp., of the H.sub.2-containing species in a (plasma) carrier gas, e.g. N.sub.2 or Ar, He, Xe, . . . to form H radicals.

[0076] In particular in the layer detachment step, an ArH.sub.2 plasma or a N.sub.2H.sub.2 plasma can be used to detach the contaminating materials of the contamination layer 24. Instead of using hydrogen H.sub.2 as the reactant 45, oxygen O.sub.2 may be used as the reactant 45 in the layer detachment step, in particular when an organic compound is used as the surface-modifying reactant in the surface-modifying step.

[0077] As an alternative or in addition to using a plasma for assisting the surface modification step and the material detachment step, it is also possible during the performance of a respective step to change the temperature T to promote a reaction that is desired in the respective step (e.g. with a greater surface energy) or to suppress a reaction that is undesired in the respective step (e.g. with a lower surface energy). The desired reaction can be, for example, the formation or the evaporation of a volatile hydride, the undesired reaction can be e.g. an undesired secondary reaction such as the diffusion of hydrogen into the Mo and Si layers of the multilayer coating 23, which can here result in the formation of blisters which may cause a layer detachment of individual layers of the multilayer coating 23. The surface energy of metallic tin (Sn) according to literature is approximately 0.6-0.7 J/m.sup.2, cf. e.g. L. Vitos et al., The surface energy of metals, Surface Science 411 (1998), 186. It is more difficult to find a value in literature for the surface energy of metal oxides, specifically of tin oxide, because typically indicated is the surface energy of indium tin oxide (ITO), which is between approximately 46 mJ/m.sup.2 and 64 mJ/m.sup.2, cf. J. S. Kim, et al., Surface energy and polarity of treated indium-tin-oxide anodes for polymer light-emitting diodes studied by contact-angle measurements, J. Appl. Phys. 86, (1999) 2774.

[0078] In order to support a desired reaction or suppress an undesired reaction in the spatial atomic layer etching process shown in FIG. 3, it is necessary to quickly switch the temperature T between the two steps, such that the temperature T substantially remains constant in a respective step. FIG. 4 shows the time profile of the temperature T, which is comparatively great in the first step S1, i.e. the surface modification step (shown here to be approximately 150 C.), while the temperature T in the second step S2, i.e. the material detachment step, is comparatively low (shown here to be approximately 100 C., preferably lower than approximately 100 C.).

[0079] As can likewise be seen in FIG. 4, the temperature T very rapidly increases and decreases between the two steps S1, S2, i.e. a temperature change T.sub.u takes place at a rate that is more than approximately +100 K/s during the transition from the second step S2 to a subsequent first step S1, while the temperature change T.sub.d during the transition from the first step S1 to the subsequent second step S2 is more than approximately 50 K/s. The temperature change T.sub.u, T.sub.d ideally takes place synchronously with the supply of the surface-modifying reactant 44 and the material-detaching reactant 45, respectively, i.e. directly before and after the supply. The temperature change T.sub.u, T.sub.d can be effected by way of suitable heating and/or cooling apparatuses which are mounted on the atomic layer etching head 41, as is described for example in DE 10 2014 222 534 A1, which is described further above. The heating apparatus can be, for example, a radiant heater, while the cooling apparatus can be, for example, a Peltier element.

[0080] In particular in the case of spatial atomic layer etching, it has proven advantageous if, in place of heat transfer by radiant heating, conductive heat transfer takes place, in which the gaseous surface-modifying reactant 44 is heated and the layer-detaching reactant 45 is cooled, or not heated, or vice versa. Due to the small distance between the atomic layer etching head 41 and the contamination layer 24 it is possible due to a heat transfer based on conduction to achieve high rates of temperature change T.sub.u, T.sub.d. In this case it can be in particular advantageous if the reactants 44, 45 contain He or H.sub.2, because these are gases having the highest heat capacity. The gases, or streams of gas, having the reactant 44, 45 can be heated for example by way of heating devices in the form of metallic heating coils 49, which surround the gas inlets at the supply devices 42, 43, as is illustrated in FIG. 3.

[0081] It is to be understood that the quick temperature change described further above is not limited to the atomic layer etching head 41, described in FIG. 3, for spatial atomic layer etching, but can also be performed in the conventional atomic layer etching process described in connection with FIG. 2. It is likewise to be understood that the reactants oxygen (O.sub.2) and hydrogen (H.sub.2) described in connection with FIG. 2 or other reactants 44, 45 can also be used in the atomic layer etching head 41 illustrated in FIG. 3. Instead of the reflective optical element 14, illustrated in FIG. 2 and FIG. 3, having a reflective multilayer coating 23, it is also possible to remove a respective contamination layer 24 from other reflective optical elements, for example from what are known as grazing-incidence mirrors, which have a reflective coating that may consist only of a single layer.

[0082] In summary, it is possible in the manner described further above to remove contaminations from the optical surfaces 14a of reflective optical elements 14, in particular mirrors, by removing said contaminations by way of evaporating etching, specifically using the ALE method, which is also referred to as reverse atomic layer deposition and in which repeated surface modification steps and material detachment steps are performed, for example in the form of oxidation-reduction cycles. The atomic layer etching process is preferably performed as a spatial atomic layer etching process, since the latter makes possible short process times and low process costs. However, if the process speed is non-critical, the cyclic atomic layer etching process can also be performed as a conventional atomic layer etching process, i.e. using the temporal separation of the surface modification step and the material detachment step described in connection with FIG. 2 (between which a purging or cleaning step is typically performed).