SPRAY EVAPORATION OF A LIQUID RAW MATERIAL FOR PREPARATION OF SILICON DIOXIDE AND METAL OXIDES
20200140282 · 2020-05-07
Assignee
Inventors
- Joachim Erz (Schwörstadt, DE)
- Claudia SEVERIN (Hofheim, DE)
- Maximilian Cornelius (Frankfurt am Main, DE)
Cpc classification
C01B33/183
CHEMISTRY; METALLURGY
C01B13/34
CHEMISTRY; METALLURGY
C01G23/07
CHEMISTRY; METALLURGY
International classification
Abstract
The present invention relates to a process for preparing a metal oxide,
comprising a) spraying a liquid raw material comprising at least one metal compound by mixing it with a gas to form an aerosol;
b) forming a gaseous reaction mixture from the aerosol obtained in step a) by complete evaporation thereof;
c) converting the gaseous reaction mixture obtained in step b) to metal oxide in the presence of oxygen.
Claims
1-15. (canceled)
16. A process for preparing silicon dioxide and/or a metal oxide, comprising the following steps: a) spraying a liquid raw material comprising at least one silicon compound and/or a metal compound by mixing it with a gas to form an aerosol; b) forming a gaseous reaction mixture from the aerosol obtained in step a) by complete evaporation thereof; c) converting the gaseous reaction mixture obtained in step b) to silicon dioxide and/or metal oxide in the presence of oxygen.
17. The process of claim 16, wherein the aerosol formed in step a) comprises liquid droplets having a numerical average particle size of not more than 2 mm.
18. The process of claim 16, wherein the ratio of gas volume in standard cubic metres used in total in steps a) and b) to the amount of the liquid raw material used in kilograms is from 0.1 to 100 m.sup.3 (STP)/kg.
19. The process of claim 16, wherein the gas used in step a) and/or b) comprises oxygen.
20. The process of claim 16, wherein the liquid raw material is preheated to a temperature of 50 to 500 C. prior to performance of step a).
21. The process of claim 16, wherein the gas used in step a) and/or b) is preheated to a temperature of 50 to 400 C.
22. The process of claim 16, wherein the liquid raw material used in step a), prior to performance of step a), has a pressure of at least 1.5 bar and the gas mixture obtained in step b) has a pressure of not more than 1.2 bar.
23. The process of claim 16, wherein the gaseous reaction mixture used in step c) has a temperature at least 10 C. higher than the dew point temperature of this mixture.
24. The process of claim 16, wherein the liquid raw material is sprayed through at least one nozzle.
25. The process of claim 16, wherein steps a) and b) take place simultaneously.
26. The process of claim 16, wherein a gaseous fuel is used in at least one of steps a)-c).
27. The process of claim 16, wherein the metal oxide comprises at least one of the elements Al, Ce, Fe, Mg, In, Ti, Sn, Y, Zn and/or Zr as the metal component.
28. The process of claim 16, wherein a silicon compound is used for preparation of silicon dioxide.
29. The process of claim 28, wherein the silicon compound is a non-halogenated compound selected from the group consisting of: tetraalkoxyorthosilicates; silanes; silicone oils; polysiloxanes and cyclic polysiloxanes; silazanes; and mixtures thereof.
30. The process of claim 28, wherein the silicon compound is a chlorinated compound selected from the group consisting of: silicon tetrachloride; dichlorosilane; trichlorosilane; methyltrichlorosilane; dimethyldichlorosilane; methyldichlorosilane; dibutyldichlorosilane; ethyltrichlorosilane; propyltrichlorosilane; and mixtures thereof.
31. The process of claim 17, wherein the ratio of gas volume in standard cubic metres used in total in steps a) and b) to the amount of the liquid raw material used in kilograms is from 0.1 to 100 m.sup.3 (STP)/kg.
32. The process of claim 31, wherein the gas used in step a) and/or b) comprises oxygen.
33. The process of claim 32, wherein the liquid raw material is preheated to a temperature of 50 to 500 C. prior to performance of step a).
34. The process of claim 32, wherein the liquid raw material used in step a), prior to performance of step a), has a pressure of at least 1.5 bar and the gas mixture obtained in step b) has a pressure of not more than 1.2 bar.
35. The process of claim 34, wherein the metal oxide comprises at least one of the elements Al, Ce, Fe, Mg, In, Ti, Sn, Y, Zn and/or Zr as the metal component.
Description
EXAMPLE 1
[0054] Octamethylcyclotetrasiloxane (D4) is initially charged in a 200 litre vat and conveyed with a gear pump at a constant conveying rate of 12.5 kg/h to a pipe coil heated with thermal oil (
[0055] By contrast with the preparation process for pyrogenic silicon dioxide described in EP 0471139 A2, in the process according to the invention, the raw material to be processed (octamethylcyclotetrasiloxane) is not converted to the gas phase in an external evaporator via heating at a hot wall surface, but via spraying, i.e. via direct transfer of a preheated, finely distributed liquid into the gas phase by mixing with the air stream in the reactor zone A intended for the purpose.
[0056] The process described here was operable successfully for several months without clogging of the nozzle or other apparatuses by solid particles or deposits in gel form.
EXAMPLE 2
[0057] Analogously to Example 1, silicon tetrachloride (tetrachlorosilane, SiCl.sub.4) is used as raw material for preparation of pyrogenic silicon dioxide. The details for performance of this experiment can be found in Table 2.
EXAMPLE 3
[0058] Analogously to Example 1, titanium tetrachloride (TiCl.sub.4) is used as raw material for preparation of pyrogenic titanium dioxide. The details for performance of this experiment can be found in Table 2.
TABLE-US-00002 TABLE 2 Example 1 Example 2 Example 3 Raw material D4 SiCl.sub.4 TiCl.sub.4 Raw material boiling point [ C.] 171-175 57 136 Raw material feed temperature 150 30 30 [ C.] Raw material throughput [kg/h] 12.5 80 530 Primary air rate [m.sup.3 (STP)/h] 128 70 1545 Primary air feed temperature [ C.] 295 270 230 Primary H.sub.2 rate [m.sup.3 (STP)/h] 6.3 26 180 Primary H.sub.2 feed temperature [ C.] 35 30 30 Reaction mixture temperature 255 63 138 upstream of the reaction zone [ C.] Pressure upstream of the reactor 995 985 990 zone [mbar] One-phase nozzle diameter [mm] 0.7 (1) 1.4 (1) 2.3 (3) (number of nozzles) Burner tube diameter [mm] 80 80 200 Burner tube length [m] 4.2 4.2 3.0 Burner tube volume [l] 15 15 377