SOLAR CELL WITH THREE LAYERS AND FORWARD BIASING VOLTAGE

Abstract

Solar cells efficiency is improved, in a first approach, wherein the anode's top contact is relocated to the middle of a three-layer solar cell wafer, permitting maximum sunlight photons to excite free electrons in the anode and p-n junction, without causing obstruction or reflection of sunlight therein. In another embodiment, a rechargeable battery of at least 0.1v is used, to create forward biasing of electrons in a solar cell, having an impurity level that is less than 99.999999%. The anode and cathode of a silicon base solar cell is doped with more than one element, other than phosphorous and boron, to increase its performance and decrease its manufacturing cost.

Claims

1. A photovoltaic cell comprising layers of a p type, n type and z type layers, whereby the z type layer is a non-doped layer, having no electrical charge.

2. The photovoltaic cell of claim 1, further comprising a top contact situated below the anode and above the Z layer.

3. The photovoltaic cell of claim 1, wherein either the p doped layer or n doped layer is extended to the middle layer, in such a matter as to form a p-n junction.

4. The photovoltaic cell of claim 1, having a surface area Z, which is less than the surface area of the p doped layer or n doped layer forming the cathode and anode, respectively.

5. The photovoltaic cell of claim 1, wherein at least one of the p type and, n type layers is doped with an additional element.

6. In combination, a photovoltaic cell and a rechargeable battery in a circuit, the battery having a voltage selected so as to promote forward biasing of excited electrons in a p-n junction of the photovoltaic cell.

7. The combination of claim 6, wherein the battery has a voltage of at least 0.1 volt, but is below the voltage of the p-n junction of the photovoltaic cell.

8. The combination of claim 6, wherein the photovoltaic cell is doped with an additional element.

9. The combination of claim 6, wherein the additional element is selected from the group consisting of gold and iodine.

10. The combination of claim 6, wherein the photovoltaic cell comprises two layers.

11. The combination of claim 6, wherein the photovoltaic cell comprises three layers.

12. The combination of claim 11, wherein the photovoltaic cell comprising layers of a p type, n type and z type layers, whereby the z type layer is a non-doped layer, having no electrical charge.

13. The combination of claim 12, further comprising a top contact situated below the anode and above the Z layer.

14. The photovoltaic cell of claim 12, wherein either the p doped layer or n doped layer is extended to the middle layer, in such a matter as to form a p-n junction.

15. The photovoltaic cell of claim 12, having a surface area Z, which is less than the surface area of the p doped layer or n doped layer forming the cathode and anode, respectively.

Description

DESCRIPTION OF DRAWINGS

[0013] FIG. 1 is a perspective view of the three-layer solar cell in stacked formation.

[0014] FIG. 2 is a partial exploded view of the three-layer solar cell showing the internal view of the main parts

[0015] FIG. 3 is a layered view in separated form of a typical solar cell anode and cathode, whereby the anode is doped with two elements and cathode with one element.

[0016] FIG. 4 is a layered view of a typical two-layer solar cell with front contact omitted (for visibility) and a rechargeable battery in place, to provide emf in one direction.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] A conventional solar wafer of silicon type consists primarily of a top conducting anode layer, and a bottom conducting cathode layer, whereby the bottom layer has a significantly larger surface area when compared to the minute surface area of the anode, whereas the anode is constructed as such to permit maximum sunlight to enter the solar cell between its spaces There is a trade off to make the top contact surface area as small possible to fulfill said purpose.

[0018] Moreover, excited electrons must travel upward into relatively widely spaced apart anode top contact for electrons uptake to take place to be available for use in a circuit.

[0019] A new and improved solar cell having three layers is described, to allow maximum sunlight to enter the solar cell, to excite free electrons. The anode (top contact) is relocated from the top surface of the solar cell, and positioned above the middle layer. The middle layer is made from non-doped silicon based element, labeled as Z, in FIGS. 1 and 2. The bottom layer, typically doped with boron, to create holes, will have a bottom contact attached thereto in the usual manner, to create the cathode.

[0020] A p-n junction is created when either an extra segment of the P doped layer or N doped layer forms part of the middle layer (see FIGS. 1 and 2). The other portion is comprise of a non-doped Z wafer of pure silicon, having no hindering impurities within, therefore inhibiting the flow of electrons across or though it to the n doped or p doped region

[0021] A p-n junction with a doped boron and a doped phosphorous layers of a silicon based solar cell will have a voltage potential of 0.6 v, when fused together to form an electric field.

[0022] A new p-n junction in the middle of the three layer solar cell is created when the middle layer doped segment, is an extension of either the top n or bottom layer p layer.

[0023] In the forgoing disclosure of an improved solar cell matrix, which is designed to increase the absorption (photons) of sunlight from the top n-layer, anode, having no top contact; conductor material, the new top contact is repositioned to the middle of the solar cell 5 and 5A,which is positioned between the bottom of the n type anode 1 and 1A, and above the non-doped Z-layer, 6 and 6A, as in FIG. 1 and FIG. 2, respectively.

[0024] The extended p doped segment depicted in FIG. 1 and FIG. 2 is preferably of a size that is 50%, or greater than 50% of the surface area of the middle portion; whereas the Z non-doped segment is preferably 50% or less than 50% of the middle layer surface area. As such, an extended p doped segment will form a p-n junction with the top layer 1,n type, or an extended n doped segment placed into the middle of the solar wafer, will form a p-n junction with the bottom layer 4 (not shown).

[0025] The non-conducting Z segment serves the purpose of creating an insulated layer between the p doped layer and the n doped layer, so that the top contact 5 (or 5A), having a contact structure well known in the art, can form a circuit with bottom contact 4 or 4A, of FIGS. 1 and 2, respectively.

[0026] The non-conducting layer may comprise a highly purified non-doped group 4 element such as carbon, silicon or germanium.

[0027] A solar cell having three layers as described will permit close to 100% of sunlight to enter the solar cell (not factoring reflection or refraction caused by factors other than the top contact), to excite free electrons situated in the anode and p-n junction, in order to carry an electric charge. Moreover, the excited electrons will have a larger surface area of top contact to conduct electricity, situated above the non conducting Z layer, allowing for maximum number of excited electrons to be conducted from the anode, thereby increasing the efficiency of a new and improved solar cell.

Forward Biased PV Cell

[0028] In another solar cell embodiment, designed to reduce the manufacturing cost and production process of a silicon wafer, a forward biasing (diode) stacked PV is created, using a two layer or three layer silicon wafer design, whereby the silicon is not highly pure to the order of 99.999999% In FIG. 3 and FIG. 4, a two layer solar cell is depicted.

[0029] A silicon ingot of purity between 98 and 99.9% can be achieved using simple metallurgy process of melting silicon dioxide (quartz), using an arc furnace. The high grade ingot is not pure enough to create a natural p-n junction electric field of at least 0.6 volts.

[0030] To increase the solar cell p-n junction formation of at least 0.2 volts and efficiency levelwithout utilizing complex and costly manufacturing process, the anode and or cathode of the solar cell is preferably doped with two dopants instead of one.

[0031] In addition to phosphorous, which is commonly used in the industry to create the n type layer, anode, small quantity of pure gold (which is non-corrosive), silver or copper, both preferably coated with gold, is added to the anode. The addition of a highly electrically conductive metal, such as gold or copper, all having one valence electron, will make the anode more conductive to the photovoltaic effect, and create a p-n junction of at least 0.2 volts in a new amalgamated solar cell.

[0032] A group seven element, such as iodine, with seven (7) valence electrons may be used to dope the cathode layer, in addition to boron, to create a more conductive solar cell positive end, as iodine has a strong affinity for a single electron.

[0033] Referring to FIG. 4, to facilitate the flow of electrons in one direction of a typical solar cell, a rechargeable battery of suitable voltage, ideally of at least 0.1 volt, is added to the circuit, to facilitate the flow of electrons toward the cathode, thereby overcoming potential resistance caused by unwanted impurities in the semiconductor material. Gold and iodine respectively will also facilitate forward biasing given their high conductivity and affinity for electrons, respectively.

[0034] When electrons flow towards the cathode upon exposure of the completely exposed anode n type to the sun, the rechargeable battery will forward bias the electrons, acting as an electron pump and will be recharged by using a resistor (not shown), in series with the battery, to recharge said battery. The rechargeable battery may have a voltage output of 0.1 volt or greater, but preferably below the value of the electric field of the p-n junction of the photovoltaic cell.