Single chip for generating multiple differential signals and loop-through signals according to a single-ended RF signal
10637417 ยท 2020-04-28
Assignee
Inventors
- Kuan-Ming Chen (Hsinchu County, TW)
- Yun-Yi Chen (Hsinchu County, TW)
- Tzu-Yun Wang (Hsinchu County, TW)
Cpc classification
H03F3/45179
ELECTRICITY
H03F2200/231
ELECTRICITY
H03F3/68
ELECTRICITY
H03G3/3042
ELECTRICITY
H03F2203/45111
ELECTRICITY
H03G3/3036
ELECTRICITY
International classification
H03F3/68
ELECTRICITY
Abstract
A single chip for generating multiple differential signals and loop-through signals according to a single-ended RF signal inputted to the single chip, wherein delays between different channels of the multiple differential signals and loop-through signals can be minimized for supporting picture-in-picture applications; in addition, the single chip can integrate a power detector and an AGC circuit for controlling the gain of an LNA inside the single chip, and the gain of the LNA can be outputted from the single chip for different usages.
Claims
1. A single chip for generating multiple differential signals and loop-through signals according to a single-ended RF signal, said single chip comprising: a first amplifier, wherein a first terminal of the first amplifier is coupled to a first pin of the single chip for receiving the first single-ended RF signal, and a second terminal of the first amplifier outputs a second single-ended RF signal according to the first single-ended RF signal; a first single-ended to differential amplifier, wherein a first terminal of the first single-ended to differential amplifier is coupled to the second terminal of the first amplifier to receive the second single-ended RF signal, and a second terminal and a third terminal of the first single-ended to differential amplifier outputs a first pair of differential RF signals according to the second single-ended RF signal, wherein the second terminal and the third terminal of the first single-ended to differential amplifier are coupled to a second pin and a third pin of the single chip, respectively; a second single-ended to differential amplifier, wherein a first terminal of the second single-ended to differential amplifier is coupled to the second terminal of the first amplifier to receive the second single-ended RF signal, and a second terminal and a third terminal of the second single-ended to differential amplifier outputs a second pair of differential RF signals according to the second single-ended RF signal, wherein the second terminal and the third terminal of the second single-ended to differential amplifier are coupled to a fourth pin and a fifth pin of the single chip, respectively; a second amplifier, wherein a first terminal of the second amplifier is coupled to the second terminal of the first amplifier to receive the second single-ended RF signal, and a second terminal of the second amplifier is coupled to a sixth pin of the single chip to output a third single-ended RF signal according to the second single-ended RF signal; and a third amplifier, wherein a first terminal of the third amplifier is coupled to the second terminal of the first amplifier to receive the second single-ended RF signal, and a second terminal of the third amplifier is coupled to a seventh pin of the single chip to output a fourth single-ended RF signal according to the second single-ended RF signal.
2. The single chip of claim 1, wherein the first amplifier is an LNA.
3. The single chip of claim 2, further comprising a power detector and an AGC circuit, wherein a first terminal of the power detector is coupled to the second terminal of the LNA, wherein the AGC circuit automatically controls a gain of the LNA according to an output of the power detector that generates an indication of a power level of the second single-ended RF signal, wherein the gain of the LNA is outputted to at least one eighth pin of the single chip.
4. The single chip of claim 3, wherein each of the second amplifier and the third amplifier is a buffer with a unity gain.
5. The single chip of claim 3, further comprising a power switch for powering on or powering down the single chip according to a control signal inputted from a ninth pin of the single chip.
6. The single chip of claim 3, wherein the single chip is connected to an external chip, wherein the external chip receives the first pair of differential RF signals, wherein the least one-eighth pin of the single chip is connected to at least one pin of the external chip.
7. The single chip of claim 5, wherein the single chip is connected to an external chip, wherein the external chip receives the first pair of differential RF signals, wherein the least one eighth pin of the single chip is connected to at least one pin of the external chip, and the ninth pin of the single chip is coupled to a pin of the external chip that outputs the control signal.
8. The single chip of claim 1, wherein the single chip is based on a CMOS process.
Description
BRIEF DESCRIPTION OF DRAWINGS
(1) The foregoing aspects and many of the accompanying advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description when taken in conjunction with the accompanying drawings, wherein:
(2)
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DETAILED DESCRIPTION OF EMBODIMENT
(6) The detailed explanation of the present invention is described as following. The described preferred embodiments are presented for purposes of illustrations and description, and they are not intended to limit the scope of the present invention.
(7)
(8) In one embodiment, the single chip 100 generates more than two pairs of differential signals according to the single-ended RF signal RFIN.
(9) In one embodiment, the single chip 100 generates more than two loop-through signals according to the single-ended RF signal RFIN.
(10) In one embodiment, the single chip 100 generates more than two pairs of differential signals and more than two loop-through signals according to the single-ended RF signal RFIN.
(11) In one embodiment, each of the second amplifier 103A and the third amplifier 103B is a buffer with a unity gain.
(12) In one embodiment, the single chip 100 is based on a CMOS process.
(13) In one embodiment, the single chip 100 further comprises a power detector 104 and an AGC circuit 105, wherein the power detector 104 is coupled to the second terminal of the LNA 101 that outputs the second single-ended RF signal RF_LNA, wherein the AGC circuit 105 automatically controls a gain of the LNA 101 according to an output of the power detector 104 that generates an indication of a power level of the second single-ended RF signal RF_LNA, wherein the gain of the LNA 101 LNA_GAIN is outputted to at least one eighth pin 008 of the single chip 100.
(14) In one embodiment, the single chip 100 further comprises a power switch 106 for powering on or powering down the signal chip 100 according to a control signal PWD inputted from a ninth pin 009 of the single chip 100.
(15) In one embodiment,
(16) In one embodiment,
(17) In one embodiment,
(18) The foregoing descriptions of specific embodiments of the present invention have been presented for purposes of illustrations and description. They are not intended to be exclusive or to limit the invention to the precise forms disclosed, and obviously many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to particular use contemplated. It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.