Micro-electro-mechanical device and manufacturing process thereof

Abstract

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Claims

1. A method, comprising: forming a first buried cavity in a monolithic body of semiconductor material; and forming a sensitive region in the monolithic body facing the first buried cavity, wherein forming the sensitive region includes forming a single trench that extends into the monolithic body as far as the first buried cavity, the single trench extending around the sensitive regions so that a first end of the single trench overlaps a second end of the single trench.

2. The method of claim 1, further comprising forming a second buried cavity in the sensitive region, the second buried cavity overlapping the first buried cavity.

3. The method of claim 1, further comprising coupling a perimeter of a membrane to the sensitive region, the membrane being arranged over the sensitive region.

4. The method of claim 3, wherein the membrane is spaced apart from the sensitive region by a cavity.

5. The method of claim 1, further comprising coupling a cap element to a surface of the peripheral portion of the monolithic body.

6. The method of claim 1, wherein the single trench has a spiral shape that extends around an entire perimeter of the sensitive region.

7. The method of claim 6, wherein the single trench has a first end portion and a second end portion, the first end portion and the second end portion extending along a same side of the sensitive region.

8. A method, comprising: forming a buried cavity in a monolithic body of semiconductor material; forming a sensitive region in the monolithic body of semiconductor material covering the buried cavity; and forming a movable element including a central portion and a perimeter portion, the perimeter portion coupled to the sensitive region, the central portion of the movable element being separated from the sensitive region by a second cavity.

9. The method of claim 8, wherein forming the sensitive region includes forming a decoupling trench that separates the sensitive region from a peripheral portion of the monolithic body.

10. The method of claim 9, wherein the decoupling trench has a spiral shape.

11. The method of claim 10, wherein the spiral shape extends around an entire perimeter of the sensitive region.

12. The method of claim 8, further comprising coupling a cap to the perimeter portion of the monolithic body, the cap forming a cavity with the monolithic body, the movable element being located in the cavity.

13. The method of claim 8, further comprising forming a through opening in the monolithic body, the through opening placing the buried cavity in fluid communication with an environment that is external to the monolithic body.

14. A method, comprising: forming a first buried cavity in a monolithic body of semiconductor material; and decoupling a sensitive region in the monolithic body from a peripheral portion of the monolithic body by forming a single spiral shaped trench that extends around an entire perimeter of the sensitive region, the sensitive region facing the first buried cavity.

15. The method of claim 14, further comprising forming a second buried cavity in the sensitive region.

16. The method of claim 15, wherein the second buried cavity overlaps the first buried cavity.

17. The method of claim 14, further comprising coupling a membrane to the sensitive region.

18. The method of claim 17, wherein the membrane is arranged over the sensitive region and is spaced apart from the sensitive region.

19. The method of claim 18, further comprising coupling a cap to a surface of the peripheral portion.

20. The method of claim 14, wherein the single spiral shaped trench is a square spiral shape.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

(1) For a better understanding of the present disclosure, preferred embodiments thereof are now described, purely by way of non-limiting example, with reference to the attached drawings, wherein:

(2) FIGS. 1 and 2 are, respectively, a cross-section and a top view of a known MEMS sensor;

(3) FIGS. 3A-3D are cross-sections of successive manufacturing steps of the MEMS sensor of FIG. 1;

(4) FIGS. 4A-4F show cross-sections of successive steps of an embodiment of the present manufacturing process;

(5) FIG. 5 is a top view of a detail of the wafer formed in step 4E of the present process;

(6) FIGS. 6A-6D are cross-sections of successive steps of another embodiment of the present manufacturing process;

(7) FIG. 7 is a top view of a detail of the wafer formed in step 6B of the present process;

(8) FIG. 8 is a top view of a detail of the wafer formed in step 6C of the present process;

(9) FIG. 9 is a cross-section of a different embodiment of the present MEMS device; and

(10) FIG. 10 shows an apparatus using the present MEMS device.

DETAILED DESCRIPTION

(11) The present manufacturing process will be described hereinafter with reference to manufacturing a single sensitive structure, it being understood that it is replicated a number of times in a wafer, prior to dicing the wafer, in a per se known manner to the person skilled of the art.

(12) Initially (FIG. 4A), a buried cavity is formed in an initial wafer 100 of semiconductor material. For example, to this end, the manufacturing process described in U.S. Pat. No. 8,173,513 and summarized briefly hereinafter may be used.

(13) In detail, on the initial wafer 100, a resist mask 101 is formed having openings arranged according to a honeycomb configuration. Using the mask 101, the initial wafer 100 is anisotropically etched for forming a plurality of trenches 102, communicating with each other and delimiting a plurality of silicon columns 103.

(14) With reference to FIG. 4B, the mask 101 is removed and an epitaxial growth is carried out in reducing environment. Consequently, an epitaxial layer, for example of an N type with a thickness of 30 m, grows above the columns 103, closing the trenches 102 at the top and forming a first intermediate wafer 200.

(15) A thermal annealing is carried out, for example for 30 minutes at 1190 C., preferably in hydrogen atmosphere, or, alternatively, in nitrogen atmosphere.

(16) As discussed in the patents referenced above, annealing causes migration of the silicon atoms, which tend to move into a lower-energy position. Consequently, and also by virtue of the short distance between the columns 103, the silicon atoms of the latter migrate completely, and a first buried cavity 106 is formed. A thin silicon layer remains above the first buried cavity 106 and is formed in part by epitaxially grown silicon atoms and in part by migrated silicon atoms and forms a monosilicon closing layer 105.

(17) In the embodiment shown (FIG. 4C), another epitaxial growth is carried out, of an N type or else a P type and of thickness of a few tens of micrometres, for example 50 m, starting from the closing layer 105. A second intermediate wafer 201 is thus formed, which includes a first thick monosilicon region 108 that overlies the first buried cavity 106.

(18) With reference to FIG. 4D, a second cavity 109 is formed in the first thick region 108, for example repeating the manufacturing process described in U.S. Pat. No. 8,173,513 (see also FIGS. 4A and 4B). In this way, a sensor wafer 107 is formed having a first and a second face 107A, 107B and, above the first cavity 106, a second thick region 114. The second thick region 114 accommodates a second cavity 109 and a membrane 110, which is delimited at the bottom of the second cavity 109 and faces the first face 107A. The second thick region 114 has, for example, a thickness of approximately 50 m, and the membrane 110 has, for example, a thickness of approximately 10 m.

(19) If the application so specifies, electronic components 121 may be provided in the membrane 110, for example piezoresistors, via diffusion or implantation of dopant ion species, here of a P type, in a known manner and not shown. Further, in a per se known manner, electrical interconnections (not shown) may be provided on the first face 107A of the sensor wafer 107.

(20) With reference to FIG. 4E, using a masking layer (not shown), a deep silicon etch is carried out through the second thick region 114 until the first cavity 106 is reached. A trench 111 is thus formed, external to and surrounding the second cavity 109. In particular, in the embodiment shown, the trench 111 has the shape of a square spiral. In this way, as may be seen in the top view of FIG. 5, the trench 111 is formed by five sides delimiting a sensitive portion 112, and an arm or spring 113 connecting the sensitive portion 112 to the rest of the sensor wafer 107 (peripheral portion 104 and base 119).

(21) A cap wafer 115 is fixed to the first face 107A of the sensor wafer 107. To this end, for example, bonding regions 116, for instance, of metal such as gold, tin, or copper, or of polymeric material or a glass based material (glass-frit) may be applied previously to the cap wafer 115 and/or to the sensor wafer 107. In this way, it is possible to electrically connect the electronic components 121, integrated in the second wafer 107, with conductive structures (not illustrated) in or on the cap wafer 115. The bonding regions 116 further form spacers between the first face 107A of the sensor wafer 107 and the cap wafer 115, thus delimiting a gap 117.

(22) In the embodiment shown, the cap wafer 115 has a through hole 118 that enables fluidic connection between the gap 117 and the external environment and detection, by the membrane 110, of the external pressure.

(23) The cap wafer 115 may further be provided with holes (not shown) for bonding wires (not shown). Alternatively, in a way not shown either, through-silicon vias (not shown) may be provided in the peripheral portion 104 of the sensor wafer 107 for electrical connection of the electrical components 121 with the second face 107B of the sensor wafer 107.

(24) After dicing the sensor wafer 107 into a plurality of MEMS devices 120, each of them may be fixed to a support (not shown), for example an ASIC. Alternatively, the sensor wafer 107 may be fixed to a further wafer, prior to dicing, or to a printed-circuit board, in a way not shown.

(25) According to a different embodiment, the second cavity may be formed via removal of a sacrificial layer.

(26) In this case, the manufacturing process may comprise the same initial steps as those described above with reference to FIGS. 4A-4C.

(27) Thus, starting from the structure of FIG. 4C, where the first cavity 106 has already been formed in the second intermediate wafer 201, a sacrificial region 130 is formed on the first thick region 108. The sacrificial region 130 is formed, for example, by depositing a sacrificial layer (for instance, of silicon oxide) and its definition via known photolithographic techniques (FIG. 6A). A structural layer 131 is deposited over the sacrificial region 130, for example a polycrystalline silicon layer grown by CVD, to form a sensor wafer 210 having a first, non-planar, face 210A, comprising a projecting area, corresponding to the structural layer 131, and a lowered area, corresponding to the exposed portion of the first thick region 108.

(28) With reference to FIG. 6B, the structural layer 131 is etched to define a micro-electro-mechanical structure of an inertial type, for example an accelerometer. In this case, as may be seen in the top view of FIG. 7, a suspended mass or platform 132, springs 133, connecting the platform 132 to the rest of the structural layer 131, and mobile and fixed electrodes 134, represented only schematically in FIG. 7, are defined.

(29) The sacrificial region 130 is removed by etching the sacrificial material, for example in hydrofluoric acid for releasing the platform 132 and the mobile electrodes, thereby obtaining the structure of FIG. 6B, where a second cavity 125 extends underneath the platform 132.

(30) Subsequently or previously, for example using a dry film (FIG. 6C) and analogously to what described with reference to FIG. 4E, using a masking layer (not shown) a deep silicon etch is made through the first thick region 108, outside the area of the structural layer 131, and thus outside the platform 132, until the first cavity 106 is reached. The trench 111 is thus formed, which, in top view (see FIG. 8) surrounds the second cavity 125 and the platform 132. Also here, the trench 111 has the shape of a square spiral and comprises five sides delimiting a sensitive portion 135, and an arm or spring 136 connecting the sensitive portion 135 to the rest of the sensor wafer 210, hereinafter also indicated as peripheral portion 137.

(31) A cap wafer 140 is fixed to the first face 210A of the sensor wafer 210 analogously to what described with reference to FIG. 4F. In this case, since the surface 210A of the sensor wafer 210 is not planar and the platform 132 projects above the thick region 108, the cap wafer 140 has a recess 141 facing the sensitive region 135.

(32) Also in this case, the cap wafer 140 may have holes (not shown) for passage of bonding wires, or, in a way not shown, through-silicon vias may be provided in the peripheral portion 137.

(33) The sensor wafer 210 is diced into a plurality of MEMS devices 143, and, analogously to what already described, each of them may be bonded to a support or the sensor wafer 210 may be fixed to a further wafer, prior to dicing.

(34) In a different embodiment (FIG. 9), the cap is formed directly by an ASIC, and the hole for connection to the external environment is formed directly in the sensor wafer, instead of in the cap.

(35) In the embodiment shown, the sensor wafer 107 of FIG. 4E is used. The base portion 119 of the sensor wafer 107, underneath the first cavity 106 in the view of FIG. 4E, is here perforated by a deep silicon etch, analogous to the trench 111 etching. A connection hole 145 is thus obtained and connects the first cavity 106 to the external environment.

(36) First stoppers 146, for example of dielectric material, such as silicon oxide, or metal material or polysilicon or a stack of different material layers, deposited and defined on the first face 107A, in a per se known manner, are further formed on the first face 107A of the sensor wafer 107.

(37) Second stoppers 147 are formed on a face 150A of an ASIC wafer 150, in a position so as to face, at a distance, the first stoppers 146.

(38) Spacer elements 151 as well as mechanical and electronic connection elements 152 are formed on the ASIC wafer 150 or on the sensor wafer 107.

(39) The spacers 151 may be of materials including gold, copper, tin, glass-frit or polymers and may have a thickness of 5 m.

(40) The mechanical and electronic connection elements 152 may, for example, be formed by so-called solder balls, arranged at contact pads 153A, 153B formed on the first face 107A of the sensor wafer 107 and a face 150A of the ASIC wafer 150.

(41) The sensor wafer 107 and the ASIC wafer 150 are bonded together, with the first face 107A of the sensor wafer and the face 150A of the ASIC wafer 150 facing each other, thereby forming a composite wafer. Finally, the composite wafer is diced into a plurality of finished devices 160.

(42) As an alternative to the above, the connection hole 145 may be formed at the end of the process, prior to dicing the composite wafer.

(43) In this way, between the two faces 107A and 150A a gap 154 is formed, the thickness thereof is defined by the spacer elements 151, and the sensitive portion 112 may move in a limited way within the gap 154 or the first cavity 106, and is thus decoupled from the peripheral portion 104.

(44) In addition, the membrane 110 is connected to the external environment through the trench 111, the first cavity 106, and the hole 145, thus forming a fluidic path.

(45) The mechanical and electronic connection elements 152 enable, in addition to bonding the sensor wafer 107 and the ASIC wafer 150, their electrical connection.

(46) As an alternative to the above, the sensor wafer 107 and/or the ASIC wafer 150 may be diced prior to bonding, in a per se known manner. Further, it is possible to form the cap and ASIC also starting from the structure of FIG. 6A, and thus with the second cavity 125 formed by removal of a sacrificial region.

(47) FIG. 10 is a schematic representation of an electronic apparatus 170 using the MEMS device 120, 143, 160.

(48) The electronic apparatus 170 comprises, in addition to the MEMS device 120, 143, 160, a microprocessor 174, a memory block 175, connected to the microprocessor 174 and an input/output interface 176, also connected to the microprocessor 174. Further, a speaker 178 may be present for generating a sound on an audio output (not shown) of the electronic apparatus 170.

(49) In particular, the electronic apparatus 170 is fixed to a supporting body 180, for example formed by a printed circuit.

(50) The electronic apparatus 170 is, for example, an apparatus for measuring blood pressure (sphygmomanometer), a household apparatus, a mobile communication device (a cellphone, a PDAPersonal Digital Assistant, or a notebook) or an pressure measuring apparatus that may be used in the automotive sector or in the industrial field in general.

(51) In this way, the devices 120, 143, 160 may be formed with a lower number of wafers as compared to the devices currently produced, since both the cavities (i.e., the first cavity 106 and the second cavity 109 or 125) are formed in a same monolithic substrate, without bonding two wafers together.

(52) In this way, the manufacturing costs are considerably reduced. Further, it is possible to reduce the thickness of the finished device, for a same robustness. Finally, it is possible to reduce problems of contamination and/or delimitation of the gluing materials, without forming specific containment trenches.

(53) Finally, it is clear that modifications and variations may be made to the device and the manufacturing process described and illustrated herein, without thereby departing from the scope of the present disclosure. For example, the described embodiments may be combined for providing further solutions. In particular, the MEMS device 120 may be a sensor or an actuator of a different type, which may be obtained using MEMS technology and specify a mechanical decoupling from the rest of the chip.

(54) The various embodiments described above can be combined to provide further embodiments. These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure.