IMPURITY-CENTER-BASED QUANTUM COMPUTER

Abstract

A quantum bit including a quantum dot may in particular include an NV center. A nuclear quantum bit includes at least one nuclear quantum dot, which is typically a nuclear spin afflicted isotope. The quantum dot and nuclear quantum dot include a device for controlling the quantum dot and nuclear quantum dot. Compounded therefrom, a quantum register includes at least two quantum bits, and a nuclear quantum register includes at least two nuclear quantum bits. A nucleus-electron quantum register includes one quantum bit and one nuclear quantum bit, and a nucleus-electron-nucleus-electron quantum register includes at least one quantum register and at least two nucleus-electron registers. A higher-level structure, a quantum bus, for transporting a quantum information and a quantum computer composed thereof are part of the disclosure. Also included are methods necessary to fabricate and operate the device.

Claims

1-50. (canceled)

51. A quantum bit, comprising: a device for controlling at least one NV center; a substrate; optionally, an epitaxial layer; and the at least one NV center; wherein: the device for driving the at least one NV center is configured to generate an electromagnetic wave field at a location of the at least one NV center; the epitaxial layer, when present, is deposited on the substrate; the substrate, or, the epitaxial layer, when present, has a surface; the NV center is a paramagnetic center in the substrate or in the epitaxial layer, when present; the device for controlling the at least one NV center is located on the surface; a distance from the device for controlling the at least one NV center to the at least one NV center is less than a maximum distance, wherein the maximum distance is 100 nm; the substrate comprises diamond; the substrate is n-doped in an NV region of the at least one NV center; the substrate is doped with nuclear spin-free isotopes in the NV region of the at least one NV center; and a Fermi level is above an energy level of the at least one NV center in a band gap in the NV region of the at least one NV center.

52. The quantum bit of claim 51, wherein the electromagnetic wave field is a microwave field and/or a radio wave field.

53. The quantum bit of claim 51, wherein the device for controlling the at least one NV center is firmly connected to the surface.

54. The quantum bit of claim 51, wherein the device for controlling the at least one NV center comprises an electrical horizontal line.

55. The quantum bit of claim 54, wherein a virtual line perpendicular to the surface extends through the electrical horizontal line and the at least one NV center.

56. The quantum bit of claim 55, wherein the maximum distance from the horizontal line to the at least one NV center along the virtual line perpendicular to the surface is 20 nm.

57. The quantum bit of claim 51, wherein the NV region is an area that includes at least two NV centers, and in which a direct or indirect interaction occurs between the at least two NV centers, including a first NV center and a second NV center.

58. The quantum bit of claim 57, wherein a distance between the first NV center and the second NV center is less than or equal to 100 nm.

59. The quantum bit of claim 57, wherein a distance between the first NV center and the second NV center is less than or equal to 20 nm.

60. The Quantum bit according to claim 54, wherein the NV region of the at least one NV center is doped with one of following isotopes: .sup.16O, .sup.18O, .sup.32S, .sup.34S, .sup.36S.

61. The quantum bit according to claim 51, wherein the at least one NV center is fabricated by a single ion implantation in predetermined areas of the substrate or, when present, in the epitaxial layer.

62. A nuclear quantum bit, comprising: a device for controlling at least one nuclear quantum dot; a substrate; optionally, an epitaxial layer; and the at least one nuclear quantum dot; wherein: the device for controlling the at least one nuclear quantum dot is configured to generate an electromagnetic wave field at respective locations of the at least one nuclear quantum dot; the epitaxial layer, when present, is deposited on the substrate; the substrate, or the epitaxial layer when present, has a surface; the nuclear quantum dots comprise isotopes having a magnetic moment in a form of a nuclear spin; and the device for controlling the at least one nuclear quantum dot is located on the surface, and further wherein: the device for driving the plurality of nuclear quantum dots comprises an electrical horizontal line.

63. The nuclear quantum bit of claim 62, wherein the device for controlling the plurality of nuclear quantum dots is firmly connected to the surface.

64. A nuclear electron quantum register, comprising: the nuclear quantum bit according to claim 62; and a quantum bit, comprising: the device for controlling at least one NV center; the substrate; optionally, the epitaxial layer; and the at least one NV center; wherein: the device for driving the at least one NV center is configured to generate an electromagnetic wave field at a location of the at least one NV center; the epitaxial layer, when present, is deposited on the substrate; the substrate, or, the epitaxial layer, when present, has a surface; the NV center is a paramagnetic center in the substrate or in the epitaxial layer, when present; the device for controlling the at least one NV center is located on the surface; the device for controlling the at least one NV center is located near the at least one NV center; the substrate comprises diamond; the substrate is n-doped in an NV region of the at least one NV center; the substrate is doped with nuclear spin-free isotopes in the NV region of the at least one NV center; and a Fermi level is above an energy level of the at least one NV center in a band gap in the NV region of the at least one NV center.

65. The nuclear electron quantum register according to claim 64, wherein: the at least one nuclear quantum dot is fabricated using single ion implantation of isotopes with magnetic moment of an atomic nucleus associated with the at least one nuclear quantum dot.

66. The nuclear electron quantum register according to claim 65, wherein the isotopes with the magnetic moment of the atomic nucleus include one or more of .sup.13C-carbon, .sup.14N-nitrogen, .sup.15N-nitrogen or isotopes with a non-zero nucleus magnetic moment μ.

67. A quantum computer, comprising: the nuclear quantum register according to claim 64; a light source; a light source driver; and a control device; wherein: a control signal from the control device determines at which times the light source driver supplies the light source with electrical energy; and the quantum bit has a bottom surface opposite the surface; and further wherein: the control device performs in dependency of at least one quantum OP code in its memory a method of resetting a quantum dot of the quantum bit with a step of irradiating at least one quantum dot of the quantum dots with light with a wavelength in a wavelength range of 400 nm to 700 nm wavelength and/or 450 nm to 650 nm and/or 500 nm to 550 nm and/or 515 nm to 540 nm, preferably 532 nm wavelength, or the OP codes in a binary file in the memory of the control device include one or more quantum OP codes and, if applicable, OP codes that are not quantum OP codes, the control device executes at least a quantum OP code symbolizing an instruction to manipulate at least one quantum dot, or the control device executes at least a quantum OP code that is an instruction to perform one or more of quantum operations MFMW, MFMWEE, MFMWCE, MFRWCC, FRWCC, RESQB, RESQBR, RESQRCE, MQBP, MCBP, SMQB, KQBQB, KQBCB, CNQBCBA, CNQBCBB, CNQBCBC, VQB, SCNQB.

68. The quantum computer according to claim 67, wherein: the quantum bit is mounted such that the bottom surface of the quantum bit can be irradiated with green light such that the green light can reach and affect the quantum dot of the quantum bit.

69. A quantum computer system, comprising: a central control unit; one or more data buses; and n quantum computers according to claim 67, where n is a positive integer; wherein: one or more or all the quantum computers of the quantum computer system have a respective control device that is a conventional computer system; and the respective control devices are connected to the central control unit via one or more data buses, which may also be data links.

70. The quantum computer system according to claim 69, wherein: the central control unit has a memory; and the central control unit stores results of quantum operations of the respective quantum computers in this memory.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0623] FIG. 1 shows a quantum bit (QUB).

[0624] FIG. 2 shows a nuclear quantum bit (CQUB).

[0625] FIG. 3 shows a quantum register (QUREG).

[0626] FIG. 4 shows a nucleus-nuclear quantum register (CCQUREG).

[0627] FIG. 5 shows a nucleus-electron quantum register (CEQUREG).

[0628] FIG. 6 shows a nucleus-electron-nucleus-electron quantum register (CECEQUREG).

[0629] FIG. 7 shows a quantum register (QUREG) with a second vertical shield line (SV2)

[0630] FIG. 8 shows a quantum register (QUREG) with a second vertical shield line (SV2) and with a first vertical shield line (SV1) with a third vertical shield line (SV3).

[0631] FIG. 9 shows a quantum bit (QUB) with contacts (KHa, KHb, KVa) for electrical readout of the photoelectrons and a symbolic representation of the quantum bit (QUB).

[0632] FIG. 10 shows the symbolic representation of a one-dimensional quantum register (QREG1D) with three quantum bits (QUB1, QUB2, QUB3).

[0633] FIG. 11 shows the symbolic representation of a one-dimensional nuclear quantum register (CCQREG1D) with three nuclear quantum bits (CQUB1, CQUB2, CQUB3).

[0634] FIG. 12 shows the symbolic representation of a two-dimensional quantum register (QREG2D) with nine quantum dots (NV11 to NV33).

[0635] FIG. 13 shows the symbolic representation of a two-dimensional nuclear quantum register (CCQREG2D) with nine nuclear quantum dots (CI11 to CI33).

[0636] FIG. 14 shows an exemplary time amplitude curve of the horizontal current component of the horizontal current (IH) and the vertical current component of the vertical current (IV) with a phase shift of +/−π/2 for generating a circularly polarized electromagnetic field at the location of the quantum dot (NV) and the nuclear quantum dot (CI), respectively.

[0637] FIG. 15 illustrates an optimal current flow using the example of a quantum bit (QUB) with a first vertical shield line (SV1) and a second vertical shield line (SV2).

[0638] FIG. 16 illustrates an optimal current flow using the example of a quantum bit (QUB) with a first horizontal shield line (SH1) and a second horizontal shield line (SH2).

[0639] FIG. 17 shows the symbolic representation of a three-bit quantum register or nuclear quantum register with shield lines and a common first vertical drive line (IV1).

[0640] FIG. 18 shows the symbolic representation of a two-dimensional three-x-three-bit quantum register or nuclear quantum register with shield lines and contacts for reading out the photoelectrons.

[0641] FIG. 19 shows an exemplary two-bit quantum register (QUREG) with a common first horizontal line (LH1), several shield lines and two quantum dots (NV1, NV2).

[0642] FIG. 20 shows an exemplary two-bit nucleus-electron-nucleus-electron quantum register (CECEQUREG) with a common first horizontal line (LH1), multiple shield lines, and two quantum ALUs (QUALU1, QUALU2).

[0643] FIG. 21 is used to explain the quantum bus operation.

[0644] FIG. 22 shows an example of the arrangement for an exemplary five-bit quantum register in a highly simplified form in plain view.

[0645] FIG. 23 shows the block diagram of an exemplary quantum computer with an exemplary schematically indicated three-bit quantum register, which could possibly also be replaced, for example, by a three-bit nucleus-electron-nucleus-electron quantum register (CECEQUREG) with three quantum ALUs.

[0646] FIG. 24 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with two quantum ALUs (QUALU1, QUALU2).

[0647] FIG. 25 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with four quantum ALUs (QUALU1, QUALU2, QUALU3, QUALU4).

[0648] FIG. 26 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with four quantum ALUs (QUALU11, QUALU12, QUALU13, QUALU23) across corners.

[0649] FIG. 27 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with five quantum ALUs (QUALU11, QUALU12, QUALU13, QUALU14, QUALU23) as branching.

[0650] FIG. 28 shows an example symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with eight quantum ALUs (QUALU11, QUALU12, QUALU13, QUALU21, QUALU23, QUALU31, QUALU32, QUALU33,) as a ring.

[0651] FIG. 29 shows a device that can be placed inside a substrate (D) or inside an epitaxial layer (DEP1) and thus can be used in the preceding devices and in which in the material of the substrate (D) or of the epitaxial layer (DEP1) is fabricated a radiation source (PL1) that is used as a light source (LED) for the “green light”.

[0652] FIG. 30 shows a simplified device of FIG. 1 with a substrate (D) which is preferably diamond in the case of NV centers as paramagnetic centers (NV1) and preferably silicon in the case of G centers and preferably silicon carbide in the case of V.sub.Si centers, with one or more paramagnetic centers as quantum dot (NV) resp. quantum dots (NV) in the substrate (D), which interact with a line (LH), which is placed and fixed on the surface (OF) of the substrate (D) and which is preferably electrically insulated from the substrate (D), for example by an insulation (IS), due to a very small first distance (d1) of preferably less than 100 nm with the magnetic field of this line (LH) when an electric current (IH) flows through the line (LH).

[0653] FIG. 31 shows the combination of a paramagnetic center as a quantum dot (NV) in a semiconductor material of a semiconducting substrate (D), for example of silicon or silicon carbide, with a MOS transistor in this material, where the horizontal screen lines (SH1, SH2) represent the source and drain contacts, while the first horizontal line (LH1) forms the gate of the MOS transistor and is insulated from the material of the substrate (D) by the gate oxide. The pump radiation (LB) in the form of the “green light” is generated by a center (PZ).

[0654] FIG. 32 shows a structure of a substrate (D) with a device for reading the photocurrent (I.sub.Ph) of a paramagnetic center as a quantum dot (NV).

[0655] FIG. 33 shows a sub-device of FIG. 20 in the form of a quantum ALU, where the sub-device is a transistor.

[0656] FIG. 34 shows a simplified top view of the surface of a substrate (D) with, as an example, eight quantum bits (NV1 to NV8), which are arranged and indicated as black circles equally spaced in a vertical line.

[0657] FIG. 35 corresponds to FIG. 34 with the difference that no horizontal shield lines are provided.

[0658] FIG. 36 shows the substrate of FIG. 35 installed in a control system analogous to FIG. 23.

[0659] FIG. 37 shows an exemplary transistor operated as a quantum computer in a simplified schematic view from above.

[0660] FIG. 38 shows an exemplary quantum computer system (QUSYS) with an exemplary central control unit (CSE).

DESCRIPTION

[0661] FIG. 1 shows an exemplary quantum bit (QUB). The substrate (D) has an underside (US). Especially preferred is the substrate made of diamond or silicon or silicon carbide or another element of the IV. Main Group of the Periodic Table or a mixed crystal of elements of the IV. Main Group of the Periodic Table. Preferably, the isotopes of the substrate (D) have essentially no nucleus magnetic moment A. An epitaxial layer (DEP1) is deposited on the substrate (D) to improve the electronic properties. Preferably, the substrate (D) and/or the epitaxial layer (DEP1) comprises essentially only isotopes without a nucleus magnetic moment μ. Preferably, the substrate (D) and/or the epitaxial layer (DEP1) comprises essentially only one isotope type of isotope without a nucleus magnetic moment μ. The package of substrate (D) and epitaxial layer (DEP1) has a surface (OF). A horizontal conduction (LH) is deposited on the surface (OF), through which a horizontal electric current (IH) modulated with a horizontal modulation flow. The surface (OF) and the horizontal line (LH) are covered by an insulation (IS). If necessary, there is further insulation between the horizontal line (LH) and the surface (OF) to electrically isolate the horizontal line. A vertical line (LV) is applied on the insulation (IS), through which a vertical electric current (IV) modulated with a vertical modulation flow. The horizontal line (LH) and the vertical line (LV) are preferably electrically insulated from each other. Preferably, the angle α between the horizontal line (LH) and the vertical line (LV) is a right angle. The horizontal line (LH) and the vertical line (LV) cross at the point of passage (LOTP) of a virtual plumb line (LOT) through the surface (OF). Preferably, directly below the crossing point (LOTP), the quantum dot (NV) is located at a first distance (d1) below the surface (OF) in the epitaxial layer (DEP1). For example, in the case of diamond as the material of the epitaxial layer (DEP1), the quantum dot (NV) may be an NV center. In the case of silicon as the material of the epitaxial layer (DEP1), the quantum dot (NV) can be, for example, a G center. In the case of silicon carbide as the epitaxial layer material (DEP1), the quantum dot (NV) can be, for example, a V.sub.Si center. If the vertical modulation of the vertical current (IV) is shifted with respect to the horizontal modulation of the horizontal current (IH) by +/−π/2, then a rotating magnetic field (B.sub.NV) results at the location of the quantum dot (NV), for example, which influences the quantum dot (NV). This can be used to manipulate the quantum dot (NV). Here, the frequency is chosen so that the quantum dot (NV) resonates with the rotating magnetic field (B.sub.NV). The temporal duration of the pulse then determines the rotation angle of the quantum information. The polarization direction determines the direction.

[0662] FIG. 2 shows a nuclear quantum bit (CQUB). It corresponds to FIG. 1 with the difference that the quantum dot (NV) of FIG. 1 is replaced by a nuclear quantum dot (CI), which is preferably formed by an isotope with a magnetic nuclear spin. In the case of diamond as the material of the epitaxial layer (DEP1), the nuclear quantum dot (CI) can be, for example, a .sup.13C isotope. In the case of silicon as the epitaxial layer material (DEP1), the nuclear quantum dot (CI) may be, for example, a .sup.29Si isotope. In the case of silicon carbide as the epitaxial layer material (DEP1), the nuclear quantum dot (CI) may be, for example, a .sup.29Si isotope or a .sup.13C isotope.

[0663] FIG. 3 shows an exemplary quantum register (QUREG) with a first quantum bit (QUB1) and a second quantum bit (QUB2). The quantum bits (QUB1, QUB2) of the quantum register (QUREG) have a common substrate (D) and a common epitaxial layer (DEP1). The horizontal line of the first quantum bit (QUB1) is the horizontal line (LH). The horizontal line of the second quantum bit (QUB2) is also the horizontal line (LH) in this example. The vertical line of the first quantum bit (QUB1) is the first vertical line (LV1). The vertical line of the second quantum bit (QUB2) is the second vertical line (LV2). The horizontal line (LH) and the first vertical line (LV1) preferably cross above the first quantum dot (NV1), which is preferably located at a first distance (d1) below the surface, at a preferably right angle (all). Preferably, the horizontal line (LH) and the second vertical line (LV2) cross above the second quantum dot (NV2), which is preferably at a second distance (d2) below the surface, at a preferably right angle (α12). Preferably, the first distance (d1) and the second distance (d2) are similar to each other. For NV centers in diamond, these distances (d1, d2) are preferably 10 nm to 20 nm. For G centers in silicon, these spacing (d1, d2) are also preferably 10 nm to 20 nm. For VSi centers in silicon carbide, these spacing (d1, d2) are also preferably from 10 nm to 20 nm. The horizontal line (LH) is traversed by a horizontal current (IH) modulated with a horizontal modulation. The first vertical line (LV1) is flowed through by a first vertical current (IV1) modulated with a first vertical modulation. The second vertical line (LV2) is flowed through by a second vertical current (IV2) modulated with a second vertical modulation. The first quantum dot (NV1) is spaced from the second quantum dot (NV2) by a distance (sp12).

[0664] FIG. 4 shows an exemplary nucleus-nuclear quantum register (CCQUREG) with a first nuclear quantum bit (CQUB1) and a second nuclear quantum bit (CQUB2). FIG. 4 corresponds to FIG. 3 except that the first quantum dot (NV1) is replaced by a first nuclear quantum dot (CI11 and that the second quantum dot (NV2) is replaced by a second nuclear quantum dot (CI2). The first nuclear quantum dot (CI1) is spaced from the second nuclear quantum dot (CI2) by a distance (sp12′).

[0665] FIG. 5 shows an exemplary nucleus-electron quantum register (CEQUREG). Compared to FIG. 1, the quantum dot (NV) of FIG. 1 is now replaced by the combination of a quantum dot (NV) and a nuclear quantum dot (CI). This combination is also the simplest form of a quantum ALU (QUALU). The quantum dot (NV) is located at a distance (d1) below the surface (OF) in the substrate (D) or epitaxial layer (DEP1). The nuclear quantum dot (NV) is thereby located at a distance (d1′) below the surface (OF) in the substrate (D) or the epitaxial layer (DEP1). The distances (d1, d1′) are preferably approximately equal.

[0666] FIG. 6 shows an exemplary nucleus-electron-nucleus-electron quantum register (CECEQUREG). It largely corresponds to a combination of FIGS. 3 and 4 and 5. Compared to FIG. 3, the quantum dots (NV1, NV2) of FIG. 6 are now each replaced by a combination of a quantum dot (NV) and a nuclear quantum dot (CI). This is the simplest form of a quantum bus (QUBUS) with a first quantum ALU (NV1, CI1) and a second quantum ALU (NV2. CI2). Here, the first nuclear quantum dot (CI1) and the second nuclear quantum dot (CI2) can be entangled with each other using the first quantum dot (NV1) and the second quantum dot (NV2). Here, the first quantum dot (NV1) and the second quantum dot (NV2) are preferably used for transporting the dependence and the first nuclear quantum dot (CI1) and the second nuclear quantum dot (CI2) are used for calculations and storage. Exploited here is that the range of the coupling of the quantum dots (NV1. NV2) to each other is larger than the range of the nuclear quantum dots (CI1, CI2) to each other and that the T2 time of the nuclear quantum dots (CI1, CI2) is longer than that of the quantum dots (NV1, NV2). Typically, the distance between the first nuclear quantum dot (CI1) and the second quantum dot (NV2) is larger than the electron-nucleus coupling distance, so that the state of the first nuclear quantum dot (CI1) cannot affect the state of the second quantum dot (NV2) and the state of the second quantum dot (NV2) cannot affect the state of the first nuclear quantum dot (CI1). Typically, the distance between the second nuclear quantum dot (CI2) and the first quantum dot (NV1) is greater than the electron-nucleus coupling distance, so that the state of the second nuclear quantum dot (CI2) cannot affect the state of the first quantum dot (NV1) and the state of the first quantum dot (NV1) cannot affect the state of the second nuclear quantum dot (CI2). Typically, the distance between the first quantum dot (NV1) and the second quantum dot (NV2) is smaller than the electron-electron coupling distance, so that the state of the first quantum dot (NV1) can affect the state of the second quantum dot (NV2) and the state of the second quantum dot (NV2) can affect the state of the first quantum dot (NV1).

[0667] FIG. 7 shows the exemplary quantum register (QUREG) of FIG. 3 with a second vertical shield line (SV2). This technical teaching can also be applied to the registers of FIGS. 4 and 6, if necessary. The shield line allows the injection of another current to improve the selection of quantum dots during the execution of the operations by energizing the vertical and horizontal lines.

[0668] FIG. 8 shows an exemplary quantum register (QUREG) with a second vertical shield line (SV2) and with a first vertical shield line (SV1) with a third vertical shield line (SV3). This technical teaching can also be applied to the registers of FIGS. 4 and 6, if necessary. The additional shield lines allow the injection of further current to improve the selection of quantum dots during the execution of the operations by energizing the vertical and horizontal lines. The two additional lines allow for even better adjustment.

[0669] FIG. 9 shows an exemplary quantum bit (QUB) with exemplary contacts (KHa, KHb, KVa) for electrical readout of the photoelectrons in the form of a photocurrent (I.sub.Ph) and a symbolic representation of the quantum bit (QUB). The symbolic representation shows the quantum dot (NV) as a circle in the center and the horizontal line (LH) as a horizontal line and the vertical line (LV) as a vertical line. This exemplary symbolic representation is used below to illustrate the construction of more complex interconnections of quantum bits, nuclear quantum bits, and quantum ALUs.

[0670] FIG. 10 shows an exemplary symbolic representation of an exemplary one-dimensional quantum register (QREG1D) with three quantum bits (QUB1, QUB2, QUB3).

[0671] The first quantum bit (QUB1) of the exemplary one-dimensional quantum register (QREG1D) comprises the first horizontal line (LH1) and the first vertical line (LV1) as well as the first quantum dot of the first heron and first column (NV11).

[0672] The second quantum bit (QUB2) of the exemplary one-dimensional quantum register (QREG1D) includes the first horizontal line (LH1) and the second vertical line (LV2) as well as the second quantum dot of the second column and first row (NV21).

[0673] The third quantum bit (QUB3) of the exemplary one-dimensional quantum register (QREG1D) includes the first horizontal line (LH1) and the third vertical line (LV3) as well as the third quantum dot of the third column and first row (NV31).

[0674] The first horizontal line (LH1) is energized with a first horizontal current (IH1).

[0675] The first vertical line (LV1) is energized with a first vertical current (IV1).

[0676] The second vertical line (LV2) is energized with a second vertical current (IV2).

[0677] The third vertical line (LV3) is energized with a third vertical current (IV3).

[0678] FIG. 11 shows an exemplary symbolic representation of an exemplary one-dimensional nuclear quantum register (CCQREG1D) with three nuclear quantum bits (CQUB1, CQUB2, CQUB3).

[0679] The first nuclear quantum bit (CQUB1) of the exemplary one-dimensional nuclear quantum register (CCQREGID) comprises the first horizontal line (LH1) and the first vertical line (LV1) as well as the first nuclear quantum dot of the first row and first column (CI11).

[0680] The second nuclear quantum bit (CQUB2) of the exemplary one-dimensional nuclear quantum register (CCQREGID) includes the first horizontal line (LH1) and the second vertical line (LV2) as well as the second nuclear quantum dot of the second column and first row (CI21).

[0681] The third nuclear quantum bit (CQUB3) of the exemplary one-dimensional nuclear quantum register (CCQREGID) includes the first horizontal line (LH1) and the third vertical line (LV3) as well as the third nuclear quantum dot of the third column and first row (CI31).

[0682] The first horizontal line (LH1) is energized with a first horizontal current (IH1).

[0683] The first vertical line (LV1) is energized with a first vertical current (IV1).

[0684] The second vertical line (LV2) is energized with a second vertical current (IV2).

[0685] The third vertical line (LV3) is energized with a third vertical current (IV3).

[0686] FIG. 12 shows an exemplary symbolic representation of an exemplary two-dimensional quantum register (QREG2D) with three times three quantum bits (QUB11, QUB12, QUB13, QUB21, QUB22, QUB23, QUB31, QUB32, QUB33) and associated three times three quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33).

[0687] The quantum bit (QUB11) of the exemplary one-dimensional quantum register (QREG1D) in the first row and first column includes the first horizontal line (LH1) and the first vertical line (LV1) as well as the quantum dot of the first row and first column (NV11).

[0688] The quantum bit (QUB12) of the exemplary one-dimensional quantum register (QREG1D) in the first row and second column includes the first horizontal line (LH1) and the second vertical line (LV2) as well as the quantum dot of the first row and second column (NV12).

[0689] The quantum bit (QUB13) of the exemplary one-dimensional quantum register (QREG1D) in the first row and third column includes the first horizontal line (LH1) and the third vertical line (LV3) as well as the quantum dot of the first row and third column (NV13).

[0690] The quantum bit (QUB21) of the exemplary one-dimensional quantum register (QREG1D) in the second row and first column includes the second horizontal line (LH2) and the first vertical line (LV1) as well as the quantum dot of the second row and first column (NV21).

[0691] The quantum bit (QUB22) of the exemplary one-dimensional quantum register (QREG1D) in the second row and second column includes the second horizontal line (LH2) and the second vertical line (LV2) as well as the quantum dot of the second row and second column (NV22).

[0692] The quantum bit (QUB23) of the exemplary one-dimensional quantum register (QREG1D) in the second row and third column includes the second horizontal line (LH2) and the third vertical line (LV3) as well as the quantum dot of the second row and third column (NV23).

[0693] The quantum bit (QUB31) of the exemplary one-dimensional quantum register (QREG1D) in the third row and first column includes the third horizontal line (LH3) and the first vertical line (LV1) as well as the quantum dot of the third row and first column (NV31).

[0694] The quantum bit (QUB32) of the exemplary one-dimensional quantum register (QREG1D) in the third row and second column includes the third horizontal line (LH3) and the second vertical line (LV2) as well as the quantum dot of the third row and second column (NV32).

[0695] The quantum bit (QUB33) of the exemplary one-dimensional quantum register (QREG1D) in the third row and third column includes the third horizontal line (LH3) and the third vertical line (LV3) as well as the quantum dot of the third row and third column (NV33).

[0696] The first horizontal line (LH1) is energized with a first horizontal current (IH1).

[0697] The second horizontal line (LH2) is energized with a second horizontal current (IH2).

[0698] The third horizontal line (LH3) is energized with a third horizontal current (IH3).

[0699] The first vertical line (LV1) is energized with a first vertical current (IV1).

[0700] The second vertical line (LV2) is energized with a second vertical current (IV2).

[0701] The third vertical line (LV3) is energized with a third vertical current (IV3).

[0702] FIG. 13 shows the symbolic representation of a two-dimensional nuclear quantum register (CCQREG2D) with three times three nuclear quantum bits (CQUB11, CQUB12, CQUB13, CQUB21, CQUB22, CQUB23, CQUB31, CQUB32, CQUB33) and corresponding three times three nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33).

[0703] The nuclear quantum bit (CQUB11) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the first row and first column includes the first horizontal line (LH1) and the first vertical line (LV1) as well as the nuclear quantum dot of the first row and first column (CI11).

[0704] The nuclear quantum bit (CQUB12) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the first row and second column includes the first horizontal line (LH1) and the second vertical line (LV2) as well as the nuclear quantum dot of the first row and second column (CI12).

[0705] The nuclear quantum bit (CQUB13) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the first row and third column includes the first horizontal line (LH1) and the third vertical line (LV3) as well as the nuclear quantum dot of the first row and third column (CI13).

[0706] The nuclear quantum bit (CQUB21) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the second row and first column includes the second horizontal line (LH2) and the first vertical line (LV1) as well as the nuclear quantum dot of the second row and first column (CI21).

[0707] The nuclear quantum bit (CQUB22) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the second row and second column includes the second horizontal line (LH2) and the second vertical line (LV2) as well as the nuclear quantum dot of the second row and second column (CI22).

[0708] The nuclear quantum bit (CQUB23) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the second row and third column includes the second horizontal line (LH2) and the third vertical line (LV3) as well as the nuclear quantum dot of the second row and third column (CI23).

[0709] The nuclear quantum bit (CQUB3I) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the third row and first column includes the third horizontal line (LH3) and the first vertical line (LV1) as well as the nuclear quantum dot of the third row and first column (CI31).

[0710] The nuclear quantum bit (QUB32) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the third row and second column includes the third horizontal line (LH3) and the second vertical line (LV2) as well as the nuclear quantum dot of the third row and second column (CI32).

[0711] The nuclear quantum bit (CQUB33) of the exemplary one-dimensional nuclear quantum register (CCQREG2D) in the third row and third column includes the third horizontal line (LH3) and the third vertical line (LV3) as well as the nuclear quantum dot of the third row and third column (CI33).

[0712] The first horizontal line (LH1) is energized with a first horizontal current (IH1).

[0713] The second horizontal line (LH2) is energized with a second horizontal current (IH2).

[0714] The third horizontal line (LH3) is energized with a third horizontal current (IH3).

[0715] The first vertical line (LV1) is energized with a first vertical current (IV1).

[0716] The second vertical line (LV2) is energized with a second vertical current (IV2).

[0717] The third vertical line (LV3) is energized with a third vertical current (IV3).

[0718] FIG. 14 shows an exemplary time amplitude curve of the horizontal current component of the horizontal current (IH) and the vertical current component of the vertical current (IV) as a function of time (t) with a phase shift of +/−π/2 for the generation of a circularly polarized electromagnetic field at the location of the quantum dot (NV) and the nuclear quantum dot (CI), respectively.

[0719] FIGS. 15 and 16 are used to illustrate an optimum current flow. FIG. 15 will be discussed first. The principle is illustrated using the example of a quantum bit (QUB) with a first vertical shield line (SV1) and a second vertical shield line (SV2). The drawing corresponds essentially to FIG. 9. In addition, a first vertical shield line (SV1) and a second vertical shield line (SV2) and a first horizontal shield line (SH1) are drawn. Parallel to a first perpendicular line (LOT) through the quantum dot (NV), a first further perpendicular line (VLOT1) and a second further perpendicular line (VLOT2) can be drawn through the respective crossing points of the corresponding vertical shielding lines (SV1, SV2) with the horizontal line (LH). A first virtual vertical quantum dot (VVNV1) and a second virtual quantum dot (VVNV2) can then be defined at the distance (d1) of the quantum dot (NV) from the surface (OF). The first vertical electric shielding current (ISV1) through the first vertical shielding line (SV1) and the second vertical electric shielding current (ISV2) through the second vertical shielding line (SV2) and the first horizontal electric shielding current (ISH1) through the first horizontal shielding line (SH1) and the second horizontal electrical shielding current (ISH2) through the second horizontal shielding line (SH2), which is not drawn in, as well as the horizontal current (IH) through the horizontal line (IH) and the vertical current (IV) through the vertical line together give six parameters, which can be freely selected. Now, the flux density (B.sub.NV) of the circularly polarized electromagnetic wave field can be specified to manipulate the quantum dot (NV) at the location of the quantum dot (NV) and required, that the first virtual horizontal magnetic flux density (B.sub.VHNV1) at the location of the first virtual horizontal quantum dot (VHNV1), and the second virtual horizontal magnetic flux density (B.sub.VHNV2) at the location of the second virtual horizontal quantum dot (VHNV2) and the first virtual vertical magnetic flux density (B.sub.VVNV) at the location of the first virtual vertical quantum dot (VVNV1) and the second virtual vertical magnetic flux density (B.sub.VVNV2) at the location of the second virtual vertical quantum dot (VVNV2) vanish. The first virtual horizontal quantum dot (VHNV1) and the second virtual horizontal quantum dot (VHNV2) are not drawn in the figure because the figure represents a cross-section and for visibility the sectional plane must be rotated 90° about the LOT axis. FIG. 16 represents this cross section. FIG. 16 is used to illustrate an optimal current flow using the example of a quantum bit (QUB) with a first horizontal shield line (SH1) and a second horizontal shield line (SH2). This balanced energization can minimize the unintended response of quantum dots.

[0720] FIG. 17 shows the symbolic representation of a three-bit quantum register or nuclear quantum register with four horizontal shield lines (SH1, SH2, SH3, SH4) and two vertical shield lines (SV1, SV2) and with a common first vertical drive line (LV1) and with three horizontal lines (LH1, LH2, LH3).

[0721] The first horizontal shield line (SH1) is energized with the first horizontal shield current (ISH1) flowing through the first horizontal shield line (SH1).

[0722] The second horizontal shield line (SH2) is energized with the second horizontal shield current (ISH2) flowing through the second horizontal shield line (SH1).

[0723] The third horizontal shield line (SH3) is energized with the third horizontal shield current (ISH3) flowing through the third horizontal shield line (SH3).

[0724] The fourth horizontal shield line (SH4) is energized with the fourth horizontal shield current (ISH4) flowing through the fourth horizontal shield line (SH4).

[0725] The first vertical shield line (SV1) is energized with the first vertical shield current (ISV1) flowing through the first vertical shield line (SV1).

[0726] The second vertical shield line (SV2) is energized with the second vertical shield current (ISV2) flowing through the second vertical shield line (SV2).

[0727] The first horizontal line (LH1) is energized with the first horizontal current (IH1) flowing through the first horizontal line (LH1).

[0728] The second horizontal line (LH2) is energized with the second horizontal current (IH2) flowing through the second horizontal line (LH2).

[0729] The third horizontal line (LH3) is energized with the third horizontal current (IH3) flowing through the third horizontal line (LH3).

[0730] The first vertical line (LV1) is energized with the first vertical current (IV1) flowing through the first vertical line (LV1).

[0731] As can be easily seen, three scenarios are needed to ensure that only one quantum dot is energized at a time.

[0732] We first assume that we are dealing with quantum bits (QUB1, QUB2, QUB3) with three quantum dots (NV1, NV2, NV3).

[0733] In the first scenario A, the vertical shielding currents (ISV1, ISV2) and the horizontal shielding currents (ISH1, ISH2, ISH3, ISH4) and the first vertical current (IV1) and the horizontal currents (IH1, IH2, IH3) are chosen such, that the flux density (B.sub.NV1) of the circularly polarized electromagnetic wave field for manipulating the first quantum dot (NV1) at the location of the first quantum dot (NV1) is different from zero and the flux density (B.sub.NV2) of the circularly polarized electromagnetic wave field for manipulating the second quantum dot (NV2) at the location of the second quantum dot (NV2) is equal or nearly equal to zero and the flux density (B.sub.NV3) of the circularly polarized electromagnetic wave field for manipulating the third quantum dot (NV3) at the location of the third quantum dot (NV3) is equal or nearly equal to zero.

[0734] In the second scenario B, the vertical shielding currents (ISV1, ISV2) and the horizontal shielding currents (ISH1, ISH2, ISH3, ISH4) and the first vertical current (IV1) and the horizontal currents (IH1, IH2, IH3) are chosen such, that the flux density (B.sub.NV1) of the circularly polarized electromagnetic wave field for manipulating the first quantum dot (NV1) at the location of the first quantum dot (NV1) is zero or nearly zero and the flux density (B.sub.NV2) of the circularly polarized electromagnetic wave field for manipulating of the second quantum dot (NV2) at the location of the second quantum dot (NV2) is different from zero and the flux density (B.sub.NV3) of the circularly polarized electromagnetic wave field for manipulating the third quantum dot (NV3) at the location of the third quantum dot (NV3) is equal to zero or nearly zero.

[0735] In the third scenario C, the vertical shielding currents (ISV1, ISV2) and the horizontal shielding currents (ISH1, ISH2, ISH3, ISH4) and the first vertical current (IV1) and the horizontal currents (IH1, IH2, IH3) are chosen such, that the flux density (B.sub.NV1) of the circularly polarized electromagnetic wave field for manipulating the first quantum dot (NV1) at the location of the first quantum dot (NV1) is zero or nearly zero and the flux density (B.sub.NV2) of the circularly polarized electromagnetic wave field for manipulating of the second quantum dot (NV2) at the location of the second quantum dot (NV2) is equal to zero or nearly zero and the flux density (B.sub.NV3) of the circularly polarized electromagnetic wave field for manipulating the third quantum dot (NV3) at the location of the third quantum dot (NV3) is different from zero.

[0736] Obviously, then, with scenario A, the first quantum bit (QUB1) with the first quantum dot (NV1) can be selected and manipulated without affecting the other quantum bits (QUB2, QUB3) with the other quantum dots (NV2, NV3).

[0737] Obviously, with scenario B, the second quantum bit (QUB2) can then be selected and manipulated with the second quantum dot (NV2) without affecting the other quantum bits (QUB1, QUB3) with the other quantum dots (NV1, NV3).

[0738] Obviously, with scenario C, the third quantum bit (QUB3) can then be selected and manipulated with the third quantum dot (NV3) without affecting the other quantum bits (QUB1, QUB2) with the other quantum dots (NV1, NV2).

[0739] This scenario can be arbitrarily extended for linear quantum registers as in FIG. 17 for quantum registers of arbitrary length with more than 3 quantum bits.

[0740] Now imagine that the points in FIG. 17 are not quantum dots, but nuclear quantum dots.

[0741] We first assume that we are dealing with nuclear quantum bits (CQUB1, CQUB2, CQUB3) with three nuclear quantum dots (CI1, CI2, CI3).

[0742] In the first scenario A, the vertical shielding currents (ISV1, ISV2) and the horizontal shielding currents (ISH1, ISH2, ISH3, ISH4) and the first vertical current (IV1) and the horizontal currents (IH1, IH2, IH3) are chosen such, that the flux density (Biro) of the circularly polarized electromagnetic wave field for manipulating the first nuclear quantum dot (CI1) at the location of the first nuclear quantum dot (CI1) is different from zero and the flux density (Bets) of the circularly polarized electromagnetic wave field for manipulating the second nuclear quantum dot (CI2) is different from zero, nuclear quantum dot (CI2) at the location of the second nuclear quantum dot (CI2) is equal or nearly equal to zero and the flux density (Box) of the circularly polarized electromagnetic wave field for manipulating the third nuclear quantum dot (CI3) at the location of the third nuclear quantum dot (CI3) is equal or nearly equal to zero.

[0743] In the second scenario B, the vertical shielding currents (ISV1, ISV2) and the horizontal shielding currents (ISH1, ISH2, ISH3, ISH4) and the first vertical current (IV1) and the horizontal currents (IH1, IH2, IH3) are chosen such, that the flux density (B.sub.CI1) of the circularly polarized electromagnetic wave field for manipulating the first nuclear quantum dot (CI1) at the location of the first nuclear quantum dot (CI1) is zero or nearly zero and the flux density (B.sub.CI2) of the circularly polarized electromagnetic wave field for manipulating of the second nuclear quantum dot (CI2) at the location of the second nuclear quantum dot (CI2) is different from zero and the flux density (B.sub.CI3) of the circularly polarized electromagnetic wave field for manipulating the third nuclear quantum dot (CI3) at the location of the third nuclear quantum dot (CI3) is equal to zero or nearly zero.

[0744] In the third scenario C, the vertical shielding currents (ISV1, ISV2) and the horizontal shielding currents (ISH1, ISH2, ISH3, ISH4) and the first vertical current (IV1) and the horizontal currents (IH1, IH2, IH3) are chosen such, that the flux density (B.sub.CI1) of the circularly polarized electromagnetic wave field for manipulating the first nuclear quantum dot (CI1) at the location of the first nuclear quantum dot (CI1) is zero or nearly zero and the flux density (B.sub.CI2) of the circularly polarized electromagnetic wave field for manipulating of the second nuclear quantum dot (CI2) at the location of the second nuclear quantum dot (CI2) is zero or nearly zero and the flux density (B.sub.CI3) of the circularly polarized electromagnetic wave field for manipulating the third nuclear quantum dot (CI3) at the location of the third nuclear quantum dot (CI3) is different from zero.

[0745] Obviously, then, with scenario A, the first nuclear quantum bit (CQUB1) with the first nuclear quantum dot (CI1) can be selected and manipulated without affecting the other nuclear quantum bits (CQUB2, CQUB3) with the other nuclear quantum dots (CI2, CI3).

[0746] Obviously, with scenario B, the second nuclear quantum bit (CQUB2) can then be selected and manipulated with the second nuclear quantum dot (CI2) without affecting the other nuclear quantum bits (CQUB1, CQUB3) with the other nuclear quantum dots (CI1, CI3).

[0747] Obviously, with scenario C, the third nuclear quantum bit (CQUB3) can then be selected and manipulated with the third nuclear quantum dot (CI3) without affecting the other nuclear quantum bits (CCQUB2) with the other nuclear quantum dots (CI1, CI2).

[0748] This scenario can be extended arbitrarily for linear nuclear quantum registers as in FIG. 17 for nuclear quantum registers of arbitrary length with more than 3 nuclear quantum bits.

[0749] As can be easily seen, 10 currents can be freely selected. However, only three magnetic flux densities have to be determined. Therefore, the system is provided with very many degrees of freedom. So, theoretically, the shield lines (SH1, SH2, SH3, SH4, SV1, SV2) can be omitted in such a scenario. Provided that more than two metallization layers are provided, it is useful if some shield lines are routed across the quantum dots at an angle other than 0° or 90° in order to be able to locally compensate the magnetic field through the common vertical line (LV1).

[0750] FIG. 18 shows the symbolic representation of a two-dimensional three×three-bit quantum register or nuclear quantum register with shield lines and contacts for reading out the photoelectrons in the form of photocurrents (I.sub.ph).

[0751] The device has four horizontal shield lines (SH1, SH2, SH3, SH4) and four vertical shield lines (SV1, SV2, SV3, SV4) and with three vertical drive lines (LV1, LV2, LV3) and with three horizontal lines (LH1, LH2, LH3).

[0752] The first horizontal shield line (SH1) is energized with the first horizontal shield current (ISH1) flowing through the first horizontal shield line (SH1).

[0753] The second horizontal shield line (SH2) is energized with the second horizontal shield current (ISH2) flowing through the second horizontal shield line (SH1).

[0754] The third horizontal shield line (SH3) is energized with the third horizontal shield current (ISH3) flowing through the third horizontal shield line (SH3).

[0755] The fourth horizontal shield line (SH4) is energized with the fourth horizontal shield current (ISH4) flowing through the fourth horizontal shield line (SH4).

[0756] The first vertical shield line (SV1) is energized with the first vertical shield current (ISV1) flowing through the first vertical shield line (SV1).

[0757] The second vertical shield line (SV2) is energized with the second vertical shield current (ISV2) flowing through the second vertical shield line (SV2).

[0758] The third vertical shield line (SV3) is energized with the third vertical shield current (ISV3) flowing through the third vertical shield line (SV3).

[0759] The fourth vertical shield line (SV4) is energized with the fourth vertical shield current (ISV4) flowing through the fourth vertical shield line (SV4).

[0760] The first horizontal line (LH1) is energized with the first horizontal current (IH1) flowing through the first horizontal line (LH1).

[0761] The second horizontal line (LH2) is energized with the second horizontal current (IH2) flowing through the second horizontal line (LH2).

[0762] The third horizontal line (LH3) is energized with the third horizontal current (IH3) flowing through the third horizontal line (LH3).

[0763] The first vertical line (LV1) is energized with the first vertical current (IV1) flowing through the first vertical line (LV1).

[0764] The second vertical line (LV2) is energized with the second vertical current (IV2) flowing through the second vertical line (LV2).

[0765] The third vertical line (LV3) is energized with the third vertical current (IV3) flowing through the third vertical line (LV3).

[0766] As can be easily understood, there are 14 degrees of freedom at 9 points to be solved. Preferably, the grid of the skim lines should be rotated 45° against the horizontal lines and vertical lines, but this requires a difficult lithography process with the necessary dimensions.

[0767] FIG. 19 shows an exemplary two-bit quantum register (QUREG) with a common first horizontal line (LH1), several shield lines and two quantum dots (NV1, NV2). FIG. 19 largely corresponds to FIG. 8. Now, in addition to explain the readout process, a first horizontal shield line (SH1) is drawn parallel to the first horizontal line (LH1). Since this is a cross-sectional view, the corresponding second horizontal shield line (SH2) which runs on the other side of the first horizontal line (LH1), also parallel to it, is not drawn. Through contacts (KV11, KH11, KV12, KH12, KV13) the shielding lines are connected to the substrate in this example. If an extraction field is now applied between two parallel shielding lines by applying an extraction voltage between them, a measurable current flow occurs when the quantum dots (NV1, NV2) are irradiated with green light and these are in the correct quantum state. More can be found, for example, in Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, Jamslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi soya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond,” Science 363, 728-731 (2019) 15 Feb. 2019.

[0768] This design is particularly preferred in linear devices, such as those shown in FIG. 10.

[0769] FIG. 20 corresponds to FIG. 19 with the difference that now the quantum dots (NV1. NV2) are each part of several nucleus-electron quantum registers. Each quantum dot (NV1, NV2) is part of a quantum ALU (QUALU1, QUALU2) in the example of FIG. 20.

[0770] The first quantum dot (NV1) of the first quantum ALU (QUALU1) can interact with a first nuclear quantum dot (CI11) of the first quantum ALU (QUALU1) in the example of FIG. 20 when the first vertical line (LV1) and the first horizontal line (LH1) are energized with a first vertical current (IV1) and a first horizontal current (IH1), which are modulated with a first electron-nucleus radio wave resonance frequency (f.sub.RWECI1) for the first quantum ALU (QUALU1) or a first nucleus-electron-microwave resonance frequency (f.sub.MWCEI1) for the first quantum ALU (QUALU1). This first electron-nucleus radio wave resonance frequency (f.sub.RWECI1) for the first quantum ALU (QUALU1) and this first nucleus-electron-microwave resonance frequency (f.sub.MWCEI1) for the first quantum ALU (QUALU1) are preferably measured once in an initialization step by an OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding nucleus-electron quantum register (CEQUREG) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0771] The first quantum dot (NV1) of the first quantum ALU (QUALU1) can interact with a second nuclear quantum dot (CI12) of the first quantum ALU (QUALU1) in the example of FIG. 20 when the first vertical line (LV1) and the first horizontal line (LH1) are energized with a first vertical current (IV1) and a first horizontal current (IH1), which are modulated with a second electron-nucleus radio wave resonance frequency (f.sub.RWEC21) for the first quantum ALU (QUALU1) or a second nucleus-electron microwave resonance frequency (f.sub.MWCE21) for the first quantum ALU (QUALU1). This second electron-nucleus radio wave resonance frequency (f.sub.RWEC21) for the first quantum ALU (QUALU1) and this second nucleus-electron microwave resonance frequency (f.sub.MWCE21) for the first quantum ALU (QUALU1) are preferably measured once in said initialization step by another OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding nucleus-electron quantum register (CEQUREG) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0772] The first quantum dot (NV1) of the first quantum ALU (QUALU1) can interact with a third nuclear quantum dot (CI13) of the first quantum ALU (QUALU1) in the example of FIG. 20 when the first vertical line (LV1) and the first horizontal line (LH1) are energized with a first vertical current (IV1) and a first horizontal current (IH1), which are modulated with a third electron-nucleus radio wave resonance frequency (f.sub.RWEC31) for the fret quantum ALU (QUALU1) or a third nucleus-electron-microwave resonance frequency (f.sub.MWCE31) for the first quantum ALU (QUALU1). This third electron-nucleus radio wave resonance frequency (f.sub.RWEC31) for the first quantum ALU (QUALU1) and this third nucleus-electron-microwave resonance frequency (f.sub.MWCE31) for the first quantum ALU (QUALU1) are preferably measured once in said initialization step by another OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding nucleus-electron quantum register (CEQUREG) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0773] The second quantum dot (NV2) of the second quantum ALU (QUALU2) can interact Example of FIG. 20 with a first nuclear quantum dot (CI21) of the second quantum ALU (QUALU2) when the second vertical line (LV2) and the first horizontal line (LH1) are energized with a second vertical current (IV2) and a first horizontal current (IH1), which are modulated with a first electron-nucleus radio wave resonance frequency (f.sub.RWEC12) for the second quantum ALU (QUALU2) or a first nucleus-electron microwave resonance frequency (f.sub.MWCE12) for the second quantum ALU (QUALU2). This first electron-nucleus radio wave resonance frequency (f.sub.RWECI2) for the second quantum ALU (QUALU2) and this first nucleus-electron-microwave resonance frequency (f.sub.MWCEI2) for the second quantum ALU (QUALU2) are preferably measured once in an initialization step by an OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding nucleus-electron quantum register (CEQUREG) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0774] The second quantum dot (NV2) of the second quantum ALU (QUALU2) can interact with a second nuclear quantum dot (CI22) of the second quantum ALU (QUALU2) in the example of FIG. 20 when the second vertical line (LV2) and the first horizontal line (LH1) are energized with a second vertical current (IV2) and a first horizontal current (IH1), modulated with a second electron-nucleus radio wave resonance frequency (f.sub.RWEC22) for the second quantum ALU (QUALU2) or a second nucleus-electron microwave resonance frequency (f.sub.MWCE22) for the second quantum ALU (QUALU2). This second electron-nucleus radio wave resonance frequency (f.sub.RWEC22) for the second quantum ALU (QUALU2) and this second nucleus-electron-microwave resonance frequency (f.sub.MWCE22) for the second quantum ALU (QUALU2) are preferably measured once in said initialization step by another OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding nucleus-electron quantum register (CEQUREG) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0775] The second quantum dot (NV2) of the second quantum ALU (QUALU2) can interact with a third nuclear quantum dot (CI23) of the second quantum ALU (QUALU2) in the example of FIG. 20 when the second vertical line (LV2) and the first horizontal line (LH1) are energized with a second vertical current (IV2) and a first horizontal current (IH1), which are modulated with a third electron-nucleus radio wave resonance frequency (f.sub.RWEC32) for the second quantum ALU (QUALU2) or a third nucleus-electron-microwave resonance frequency (f.sub.MWCE32) for the second quantum ALU (QUALU2). This third electron-nucleus radio wave resonance frequency (f.sub.RWEC32) for the second quantum ALU (QUALU2) and this third nucleus-electron microwave resonance frequency (f.sub.MWCE32) for the second quantum ALU (QUALU2) are preferably measured once in said initialization step by another OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding nucleus-electron quantum register (CEQUREG) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0776] Since the coupling range of the quantum dots (NV1, NV2) is larger, they can be coupled to each other. The second quantum dot (NV2) of the second quantum ALU (QUALU2) can interact with the first quantum dot (NV1) of the first quantum ALU (QUALU1) in the example of FIG. 20, when the first vertical line (LV1) and the second vertical line (LV2) and the first horizontal line (LH1) are energized with a first vertical current (IV1) and a second vertical current (IV2) and a first horizontal current (IH1), which are modulated with an electron1-electron2-microwave resonance frequency (f.sub.MWEE12) for the coupling of the first quantum dot (NV1) of the first quantum ALU (QUALU1) with the second quantum dot (NV2) of the second quantum ALU (QUALU2). This electron1-electron2-microwave resonance frequency (f.sub.MWEE12) for the coupling of the first quantum dot (NV1) of the first quantum ALU (QUALU1) is preferably measured once in said initialization step by another OMDR measurement. The measured values are stored in a memory of the control computer of the control device (μC), which the latter retrieves when the corresponding electron-electron quantum register (QUREG) comprising the first quantum dot (NV1) and the second quantum dot (NV2) is to be driven. The control computer of the control device (μC) then sets the frequencies accordingly.

[0777] FIG. 21 serves to explain the quantum bus operation again. The quantum dots (NV) can be coupled over longer distances than the nuclear quantum bits (CI). They fulfill the function of the so-called “flying Q-bits”. The quantum dots (NV) are preferably NV centers fabricated in a preferably practically isotopically pure .sup.12C diamond layer when diamond is used as the material of the substrate (D) or the material of the epitaxial layer (DEP1). The quantum dots (NV) are preferably G centers fabricated in a preferably practically isotopically pure .sup.28Si silicon layer when silicon is used as the material of the substrate (D) or the material of the epitaxial layer (DEP1). The quantum dots (NV), when silicon carbide is used as the material of the substrate (D) or the material of the epitaxial layer (DEP1), are preferably Vsi centers fabricated in a preferably practically isotopically pure .sup.28Si.sup.12C silicon carbide layer. The quantum dots (NV) are used to transport dependencies over longer distances within the device, while the actual computation takes place in the nuclear quantum dots (CI). The nuclear quantum dots (CI) are preferably .sup.13C isotopes within the diamond material or .sup.15N isotopes as nitrogen atoms of said NV centers when using diamond as the material of the substrate (D) or the material of the epitaxial layer (DEP1). The nuclear quantum dots (CI), when silicon is used as the material of the substrate (D) or the material of the epitaxial layer (DEP1), are preferably .sup.29Si isotopes within the silicon material or .sup.13C isotopes as carbon atoms of said G centers. The nuclear quantum dots (CI) are preferably .sup.13C isotopes and/or .sup.29Si isotopes within the silicon carbide material when silicon carbide is used as the material of the substrate (D) or the material of the epitaxial layer (DEP1). The use of nuclear quantum bits (CI) has the advantage that the T2 times in the nuclear quantum bits are then much longer. Thus, the quantum dots (NV1, NV2) play approximately the role of terminals of the quantum ALUs (QUALU1, QUALU2).

[0778] This quantum bus (QUBUS) consisting of a more or less branched chain of quantum dots (NV1, NV2) and the local nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23) connected to the actual quantum bus via the quantum dots (NV1, NV2) represents the core of the disclosure and the heart of the quantum computer. In this context, the quantum bus (QUBUS) can become so large that not all nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23) can couple to all quantum dots (NV1, NV2). A quantum bus (QUBUS) can also have more than two quantum dots (NV1, NV2), which can, for example, be arranged one behind the other along an ordered chain, whereby two neighboring quantum dots are always so close to each other that they can couple with each other, while the coupling of a quantum dot with other than its maximum two immediate neighbors in this exemplary linear chain of quantum dots is not directly possible due to a too large distance. In that case, however, the next but one quantum dot in the exemplary chain of quantum dots can be coupled to the quantum dot indirectly by coupling to the next quantum dot that can be coupled to the quantum dot. Coupling can be understood here as entanglement of states.

[0779] FIG. 22 shows an example of the arrangement for an exemplary five-bit quantum register in a highly simplified form in plain view. The five quantum dots (NV1, NV2, NV3, NV4, NV5) are arranged linearly and can be controlled by a common first horizontal line (LH1). Perpendicular to this, in another metallization plane, the first vertical line (LV1) for controlling the first quantum dot (NV1) and the second vertical line (LV2) for controlling the second quantum dot (NV2) and the third vertical line (LV3) for controlling the third quantum dot (NV3) and the fourth vertical line (LV4) for controlling the fourth quantum dot (NV4) and the fifth vertical line (LV5) for controlling the fifth quantum dot (NV5) are fabricated. The device of the example of FIG. 22 has only a first horizontal shield line (SH1) and a second horizontal shield line (SH2). Vertical shield lines are not provided in the example. By applying an extraction voltage (V.sub.ext) between the horizontal shield line (SH1) and the second horizontal shield line (SH2), the photoelectrons can be read out.

[0780] FIG. 23 shows the block diagram of an exemplary quantum computer with an exemplary schematically indicated three-bit quantum register which, if necessary, could also be replaced, for example, by a three-bit nucleus-electron-nucleus-electron quantum register (CECEQUREG) with three quantum ALUs. An extension to an n-bit quantum register is easily possible for the person skilled in the art.

[0781] The core of the exemplary control device of FIG. 23 is a control device (μC) which is preferably a control computer. Preferably, the overall device has a magnetic field controller (MFC) which preferably receives its operating parameters from said control device (μC) and preferably returns operating status data to said control device (μC). The magnetic field control (MFC) is preferably a controller whose task is to compensate for an external magnetic field by active counter-control. Preferably, the magnetic field controller (MFC) uses a magnetic field sensor (MFS) for this purpose, which preferably detects the magnetic flux in the device preferably in the proximity of the quantum dots. Preferably, the magnetic field sensor (MFS) is a quantum sensor. Reference is made here to the applications DE 10 2018 127 394.0, DE 10 2019 130 114.9, DE 10 2019 120 076.8 and DE 10 2019 121 137.9. By means of a magnetic field control (MFK) device, the magnetic field controller (MFC) readjusts the magnetic flux density. Preferably, a quantum sensor is used because it has the higher accuracy to sufficiently stabilize the magnetic field.

[0782] The control device (μC) preferably drives the horizontal and vertical driver stages via a control unit A (CBA), which preferably energizes the horizontal lines and vertical lines with the respective horizontal and vertical currents and generates the correct frequencies and temporal burst durations.

[0783] The control unit A sets the frequency and pulse duration of the first horizontal shield current (ISH1) for the first horizontal shield line (SH1) in the first horizontal driver stage (HD1) according to the specifications of the control device (MC).

[0784] The control unit A sets the frequency and the pulse duration of the first horizontal current (IH1) for the first horizontal line (LH1) in the first horizontal driver stage (HD1) according to the specifications of the control device (μC).

[0785] The control unit A sets the frequency and the pulse duration of the second horizontal shielding current (ISH2) for the second horizontal shielding line (SH2) in the first horizontal driver stage (HD1) and that in the second horizontal driver stage (HD2) according to the specifications of the control device (μC).

[0786] The control unit A sets the frequency and the pulse duration of the second horizontal current (IH2) for the second horizontal line (LH2) in the second horizontal driver stage (HD2) according to the specifications of the control device (μC).

[0787] Control unit A sets the frequency and pulse duration of the third horizontal shield current (ISH3) for the third horizontal shield line (SH3) in the second horizontal driver stage (HD2) and that in the third horizontal driver stage (HD3) according to the specifications of the control device (μC).

[0788] Control unit A sets the frequency and pulse duration of the third horizontal current (IH3) for the third horizontal line (LH3) in the third horizontal driver stage (HD3) according to the specifications of the control device (μC).

[0789] Control unit A sets the frequency and pulse duration of the fourth horizontal shield current (ISH4) for the fourth horizontal shield line (SH4) in the third horizontal driver stage (HD2) and in the fourth horizontal driver stage (HD4), which is only indicated for lack of space, according to the specifications of the control device (μC).

[0790] The control unit A sets the frequency and the pulse duration of the first vertical shield current (ISV1) for the first vertical shield line (SV1) in the first vertical driver stage (HV1) according to the specifications of the control device (μC).

[0791] The control unit A sets the frequency and the pulse duration of the first vertical current (IV1) for the first vertical line (LV1) in the first vertical driver stage (VD)) according to the specifications of the control device (μC).

[0792] Synchronized by control unit A, these driver stages (VD1, HD1, HD2, HD3, HD4) feed their current into the lines (SV1, LV1, SV2, SH1, LH1, SH2, LH2, SH3, LH3, SH4) in a fixed phase ratio with respect to a common synchronization time.

[0793] Previously, a control unit B configures a first horizontal receiver stage (HS1) in such a way as to extract the currents injected by the first horizontal driver stage (HD1) on the other side of the lines.

[0794] Previously, the control unit B configures a second horizontal receiver stage (HS2) in such a way as to extract the currents injected by the second horizontal driver stage (HD2) on the other side of the lines.

[0795] Prior to this, the control unit B configures a third horizontal receiver stage (HS3) in such a way as to extract the currents injected by the third horizontal driver stage (HD3) on the other side of the lines.

[0796] Previously, the control unit B configures a first vertical receiver stage (VS1) in such a way as to extract the currents injected by the first vertical driver stage (VD1) on the other side of the lines.

[0797] Furthermore, the exemplary system of FIG. 23 has a light source (LED) for “green light” in the sense of this writing. By means of a light source driver (LEDDR) the control device (μC) can irradiate the quantum dots with the “green light”. When irradiated with this “green light”, photoelectrons are produced which can be extracted by the first horizontal receiver stage (HS1) and/or the second horizontal receiver stage (HS2) and/or the third horizontal receiver stage (HS3) and/or the first vertical receiver stage (VS1) by applying an extraction field, for example, to the connected shield lines.

[0798] FIG. 24 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with two quantum ALUs (QUALU1, QUALU2). The symbolic representation corresponds to the representation of a quantum bus (QUBUS) with two quantum ALUs (QUALU1, QUALU2) of FIG. 20.

[0799] Since we will build the network more and more complex in the following, the indices are already chosen here to cover two-dimensional and not only linear arrangements.

[0800] A first quantum dot (NV11) of the first line and first edge of the array and a second quantum dot (NV12) of the first line and second edge of the array are arranged along the first horizontal line (LH1). The first quantum dot (NV11) and the second quantum dot (NV12) form a quantum register (QUREG1112). The first quantum dot (NV11) in the first row and first column is the connection of the first quantum ALU (QUALU11) in the first row and first column. The first quantum dot (NV11) in the first row and first column is the connection of the first quantum ALU (QUALU11) in the first row and first column. The second quantum dot (NV12) in the first row and second column is the connection of the second quantum ALU (QUALU12) in the first row and second column.

[0801] A first vertical line (LV1) is assigned to the first quantum dot (NV11) of the first column and first row.

[0802] A second vertical line (LV2) is associated with the second quantum dot (NV12) of the second column and first row.

[0803] A first nuclear quantum dot (CI111) of the first quantum ALU (QUALU1I) of the first column and first row, together with the first quantum dot (NV11) of the first row and first column, forms a first nucleus-electron quantum register (CEQUREG111) of the first quantum ALU (QUALU11) of the first column and first row.

[0804] A second nuclear quantum dot (CI112) of the first quantum ALU (QUALU11) of the first column and first row, together with the first quantum dot (NV11) of the first row and first column, forms a second nucleus-electron quantum register (CEQUREG112) of the first quantum ALU (QUALU11) of the first column and first row.

[0805] A third nuclear quantum dot (CI113) of the first quantum ALU (QUALU11) of the first column and first row, together with the first quantum dot (NV11) of the first row and first column, forms a third nucleus-electron quantum register (CEQUREG113) of the first quantum ALU (QUALU11) of the first column and first row.

[0806] A fourth nuclear quantum dot (CI114) of the first quantum ALU (QUALU11) of the first column and first row, together with the first quantum dot (NV11) of the first row and first column, forms a fourth nucleus-electron quantum register (CEQUREG114) of the first quantum ALU (QUALU11) of the first column and first row.

[0807] The fourth nucleus-electron quantum register (CEQUREG114) of the first quantum ALU (QUALU11) of the first column and first row and the third nucleus-electron quantum register (CEQUREG113) of the first quantum ALU (QUALU11) of the first column and first row and the second nucleus-electron-quantum register (CEQUREG112) of the first quantum ALU (QUALU11) of the first column and first row and the first nucleus-electron quantum register (CEQUREG111) of the first quantum ALU (QUALU11) of the first column and first row form the first quantum ALU of the first row and first column.

[0808] A first nuclear quantum dot (CI121) of the second quantum ALU (QUALU12) of the second column and first row, together with the second quantum dot (NV12) of the first row and second column, forms a first nucleus-electron quantum register (CEQUREG121) of the second quantum ALU (QUALU12) of the second column and first row.

[0809] A second nuclear quantum dot (CI122) of the second quantum ALU (QUALU12) of the second column and first row, together with the second quantum dot (NV12) of the first row and second column, forms a second nucleus-electron quantum register (CEQUREG122) of the second quantum ALU (QUALU12) of the second column and first row.

[0810] A third nuclear quantum dot (CI123) of the second quantum ALU (QUALU12) of the second column and first row, together with the second quantum dot (NV12) of the first row and second column, forms a third nucleus-electron quantum register (CEQUREG123) of the second quantum ALU (QUALU12) of the second column and first row.

[0811] A fourth nuclear quantum dot (CI124) of the second quantum ALU (QUALU12) of the second column and first row, together with the second quantum dot (NV12) of the first row and second column, forms a fourth nucleus-electron quantum register (CEQUREG124) of the second quantum ALU (QUALU12) of the second column and first row.

[0812] The fourth nucleus-electron quantum register (CEQUREG124) of the second quantum ALU (QUALU12) of the second column and first row and the third nucleus-electron quantum register (CEQUREG123) of the second quantum ALU (QUALU12) of the second column and first row and the second nucleus-electron-quantum register (CEQUREG122) of the second quantum ALU (QUALU12) of the second column and first row and the first nucleus-electron quantum register (CEQUREG121) of the second quantum ALU (QUALU12) of the second column and first row form the second quantum ALU (QUALU12) of the first row and second column.

[0813] FIG. 25 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with four quantum ALUs (QUALU1, QUALU2, QUALU3, QUALU4). The quantum dots of the quantum ALUs are arranged along the common first horizontal line (LH1).

[0814] The first quantum ALU (QUALU11) of the first column and first row comprises four nuclear quantum bits (CI111, CI112, CI113, CI114). It is additionally controlled by a first vertical line (LV1).

[0815] The second quantum ALU (QUALU12) of the second column and first row comprises four nuclear quantum bits (CI121, CI122, CI123, CI124). It is additionally controlled by a second vertical line (LV2).

[0816] The third quantum ALU (QUALU13) of the third column and first row comprises four nuclear quantum bits (CI131, CI132, CI133, CI134). It is additionally controlled by a third vertical line (LV3).

[0817] The fourth quantum ALU (QUALU14) of the fourth column and first row comprises four nuclear quantum bits (CI141, CI142, CI143, CI144). It is additionally controlled by a fourth vertical line (LV4).

[0818] FIG. 26 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with four quantum ALUs (QUALU11, QUALU12, QUALU13, QUALU23) across corners.

[0819] The quantum dot (NV11) of the first quantum ALU (QUALU11) of the first row and first column and the quantum dot (NV12) of the second quantum ALU (QUALU12) of the first row and second column and the quantum dot (NV13) of the third quantum ALU (QUALU13) of the first row and third column are arranged along the common first horizontal line (LH1).

[0820] The quantum dot (NV13) of the third quantum ALU (QUALU13) of the first row and third column and the quantum dot (NV23) of the fourth quantum ALU (QUALU23) of the second row and third column are arranged along the common third vertical line (LV3).

[0821] The first quantum ALU (QUALU11) of the first column and first row comprises four nuclear quantum bits (CI111, CI112, CI113, CI114). It is additionally controlled by a first vertical line (LV1).

[0822] The second quantum ALU (QUALU12) of the second column and first row comprises four nuclear quantum bits (CI121, CI122, CI123, CI124). It is additionally controlled by a second vertical line (LV2).

[0823] The third quantum ALU (QUALU13) of the third column and first row comprises four nuclear quantum bits (CI131, CI132, CI133, CI134).

[0824] The fourth quantum ALU (QUALU23) of the third column and second row comprises four nuclear quantum bits (CI231, CI322, CI233, CI234). It is additionally controlled by a second horizontal line (LH2).

[0825] FIG. 27 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with five quantum ALUs (QUALU11, QUALU12, QUALU13, QUALU14, QUALU23) as branches.

[0826] The quantum dot (NV11) of the first quantum ALU (QUALU11) of the first row and first column and the quantum dot (NV12) of the second quantum ALU (QUALU12) of the first row and second column and the quantum dot (NV13) of the third quantum ALU (QUALU) 3) of the first row and third column and the quantum dot (NV14) of the fourth quantum ALU (QUALU14) of the first row and fourth column are arranged along the common first horizontal line (LH1).

[0827] The quantum dot (NV13) of the third quantum ALU (QUALU13) of the first row and third column and the quantum dot (NV23) of the fifth quantum ALU (QUALU23) of the second row and third column are arranged along the common third vertical line (LV3).

[0828] The first quantum ALU (QUALU11) of the first column and first row comprises four nuclear quantum bits (CI11.sub.1, CI11.sub.2, CI11.sub.3, CI11.sub.4). It is additionally controlled by a first vertical line (LV1).

[0829] The second quantum ALU (QUALU12) of the second column and first row comprises four nuclear quantum bits (CI12.sub.1, CI12.sub.2, CI12.sub.3, CI12.sub.4). It is additionally controlled by a second vertical line (LV2).

[0830] The third quantum ALU (QUALU13) of the third column and first row comprises four nuclear quantum bits (CI13.sub.1, CI13.sub.2, CI13.sub.3, CI13.sub.4).

[0831] The fourth quantum ALU (QUALU14) of the fourth column and first row comprises four nuclear quantum bits (CI14.sub.1, CI14.sub.2, CI14.sub.3, CI14.sub.4). It is additionally controlled by a fourth vertical line (LV4).

[0832] The fifth quantum ALU (QUALU23) of the third column and second row comprises four nuclear quantum bits (CI23.sub.1, CI32.sub.2, CI23.sub.3, CI23.sub.4). It is additionally controlled by a second horizontal line (LH2).

[0833] FIG. 28 shows an exemplary symbolic horizontal arrangement of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) with eight quantum ALUs (QUALU11, QUALU12, QUALU13, QUALU21, QUALU23, QUALU31, QUALU32, QUALU33,) as a ring.

[0834] FIG. 29 shows a device that can be placed inside a substrate (D) or inside an epitaxial layer (DEP1) and thus can be used in the preceding devices, and in which a radiation source is fabricated in the material of the substrate (D) or epitaxial layer (DEP1), which is used as a light source (LED) for the “green light”.

[0835] In the example of FIG. 29, an anode contact (AN) injects an electric current into the substrate (D) or epitaxial layer (DEN). To B. Burchard “Elektronische and optoelektronische Bauelemente and Bauelementstrukturen auf Diamantbasis” (English: Electronic and optoelectronic components and component structures based on diamond), dissertation, Hagen 1994 and to the document DE 4 322 830 A1 is referred to in this context. A cathode contact (KTH) extracts this electric current again from the substrate (D) or the epitaxial layer (DEP1). This diode has the function of the light source (LED) here. A center (PZ) located in the current path within the substrate (D) or the epitaxial layer (DEP1), serves as the radiation source of this light source (LED). In the case of diamond serving as the substrate (D) or the epitaxial layer (DEP1), this center (PZ) may be, for example, H3 center in the exemplary diamond material serving as the substrate (D) or epitaxial layer (DEP1). In this example, the center (PZ) emits “green light” (LB) upon a current flow of a pump current (1 pmp) in the substrate (D) or epitaxial layer (DEP1). Thus, in the case of diamond as a substrate (D) or as an epitaxial layer (DEP1), the exemplary H3 center emits “green light” (LB) upon a current flow of a pump current (1 pmp) in the diamond as a substrate (D) or as an epitaxial layer (DEP1) from the anode contact (AN) to the cathode contact (KTH). This “green light” (LB) from the center (PZ), for example said H3 center, can then be used to drive and possibly reset one or more quantum dots (NV) in the form of paramagnetic centers. The centers (PZ) and/or the groups (PZC) of centers (PZ) can form a one- or two- or three-dimensional lattice within the substrate (D) or epitaxial layer (DEP1). In the case of a one-dimensional lattice, the centers (PZ) may, for example, be arranged in a circular shape around a common center point, in which case a quantum dot (NV) in the form of a paramagnetic center (NV) or several quantum dots (NV) is preferably located in the center point. Preferably, in one variant, the arrangement of centers PZ or groups (PZC) of centers (PZ) together with the arrangement of quantum dots (NV) in the form of paramagnetic centers (NV) forms a one-two or three-dimensional lattice, the unit cell of the lattice then comprising one or more centers (PZ) and/or one or more groups (PZC) of centers (PZ) on the one hand and one or more quantum dots (NV) in the form of paramagnetic centers (NV). It may be a translational and/or rotational lattice around a common symmetry axis or point.

[0836] Finally, it should be mentioned that the structure of FIG. 29 is suitable to interlace the center (PZ) with the quantum dot (NV). If necessary, the optical path between the center (PZ) and the quantum dot (NV) can still be supplemented with optical functional elements of photonics such as optical waveguides, lenses, filters, apertures, photonic crystals, etc. and modified if necessary. Reference is made at this point to the patent applications DE 10 2019 120 076.8, PCT/DE 2020/100 648 and DE 10 2019 121 028.3, which are still unpublished at the time of filing this paper, and the disclosure content of which forms part of this disclosure to the extent legally permissible.

[0837] FIG. 30 shows a simplified device of FIG. 1 with a substrate (D) which is preferably diamond in the case of NV centers as paramagnetic centers (NV1) and preferably silicon in the case of G centers and preferably silicon carbide in the case of VSi centers, with one or more paramagnetic centers as quantum dots) (NV), respectively quantum dots (NV) in the substrate (D), which interact with a line (LH), which is placed and fixed on the surface (OF) of the substrate (D) and which is preferably electrically insulated from the substrate (D), for example by an insulation (IS), due to a very small first distance (d1) of preferably less than 100 nm with the magnetic field of this line (LH), when an electric current (IH) flows through the line (LH).

[0838] During the elaboration of the disclosure, it was recognized that a coil for coupling a microwave radiation and/or for setting a magnetic bias field in the form of a bias flux density B0, need not necessarily have a winding or an arc. Rather, it is the case that a line can be fabricated, for example, as a micro-structured line (LH, LV), for example, on the surface (OF) of the substrate (D) or epitaxial layer (DEP1). The paramagnetic center of a quantum dot (NV) or the nuclear quantum dot (CI) can be fabricated a few nm below the surface (OF) of the substrate (D) or the epitaxial layer (DEP1). As a result, the quantum dot (NV) or the nuclear quantum dot (CI) can be located in the near magnetic field of the line (LH, LV). Preferably, the quantum dot (NV) and/or the nuclear quantum dot (CI) are located at a first distance (r) of less than 1 μm, preferably less than 500 nm, preferably less than 200 nm, preferably less than 100 nm, preferably less than 50 nm, preferably less than 20 nm from the horizontal line (LH) exemplified herein. In the elaboration of the disclosure, it was assumed that the line (LH) is particularly preferably less than 50 nm away from the quantum dot (NV) in the form of a paramagnetic center. Due to this small distance, significant magnetic flux densities B can be generated at the location of the quantum dot (NV) in the form of the paramagnetic center (NV) or at the location of the nuclear quantum dot (CI) already with very low electric currents (IH) in the line (LH) in terms of magnitude, which influence these among other possibly relevant physical parameters.

[0839] In the example of FIG. 30, a current (IH) is applied to a line (LH). In FIG. 30, the line (LH) is preferably insulated from the substrate (D) or the epitaxial layer (DEP1). If necessary, a further insulation is used for this purpose, which is not drawn in FIG. 30 for simplification. Preferably, in the case of a substrate (D) or an epitaxial layer (DEP1) of silicon or silicon carbide, this further insulation, which is not drawn in here, is a layer of silicon dioxide, which preferably has essentially no isotopes with a nucleus magnetic moment. Preferably, in this case, it is a gate oxide. Preferably, in this case, it is .sup.28Si.sup.16O.sub.2. Preferably, the quantum dot (NV) in the form of the paramagnetic center or the nuclear quantum dot (CI) is located directly under the lead (LH) at a distance (d1) below the surface (OF) of the substrate (D) or epitaxial layer (DEP1). In one example, the distance (d1) is preferably chosen to be very small. Preferably, the distance (d1) is smaller than 1 μm, better smaller than 500 nm, better smaller than 250 nm, better smaller than 100 nm, better smaller than 50 nm, better smaller than 25 Nm, possibly smaller than 10 nm. With decreasing distances (d1) to the surface (OF) the influence of the surface states increases. It has therefore proved useful to keep distances (d1) as close as possible to 20 nm and, if necessary, especially in the case of diamond as substrate (D), to raise the surface (OF) again by depositing an epitaxial layer (DEP1) after fabrication of the quantum dots (NV) in the form of paramagnetic centers (NV1) or the nuclear quantum dots (CI), so that the distance (d1) again exceeds such a substrate material-specific minimum distance (d1). The line (LH) is preferably fabricated on the surface (OF) of the substrate (D) or epitaxial layer (DEP1) in the manner shown in FIG. 30 and is attached to this substrate (D) or epitaxial layer (DEP1) and electrically insulated from the substrate (D) or epitaxial layer (DEP1). In particular, as described, modulations of the drive current (IH) can be used to manipulate the spin of the quantum dot (NV) in the form of the paramagnetic center or the spins of the nuclear quantum dot (CI). Preferably, the lead (LH) is firmly attached to the substrate (D) or epitaxial layer (DEP1) and typically forms a single unit with it. Preferably, the line (LH) is fabricated by electron beam lithography or similar high-resolution lithography methods on the substrate (D) or epitaxial layer (DEP1), respectively, or on the surface of an intervening further isolation not drawn here and already described, if quantum dots (NV) and/or nuclear quantum dots (CI) located under different lines (LH) are to couple with each other. If such coupling is not intended, less high-resolution lithography methods may be used. If electrostatic potentials are applied between the substrate (D) or epitaxial layer (DEP1) and this line (LH, LV) by a driver stage (HD) to drive the quantum dot (NV) to be driven as the driver stage of this line (LH), the quantum states of the quantum dot (NV) in the form of the paramagnetic center or the nuclear quantum dot (CI) below the relevant line (LH) can be manipulated and influenced. In this way, for example, a single quantum dot (NV) can be forced to leave a manipulable quantum state or at least change the resonance frequency for quantum state manipulations by locally shifting the Fermi level using an electrical voltage between the line (LH) and the substrate (D) or epitaxial layer (DEP1). In the case of NV centers in diamond, this can mean that an NV center leaves the NV.sup.−-state as a quantum dot (NV). By detuning the resonance frequencies when a voltage is applied, individual quantum dots (NV) can thus be excluded from manipulations or included in such manipulations in a quantum register, depending on the choice of that voltage. In this way, for example, when NV centers in diamond are used as paramagnetic centers of quantum dots (NVs), individual NV centers can be forced to change resonance frequencies by local shift of the Fermi level and thus no longer participate or be included in quantum manipulations based on electromagnetic forces with certain frequencies depending on the setting of the voltage. Also, if necessary, the charge state of the quantum dot (NV) can be influenced by manipulating the position of the Fermi level by means of the voltage between the substrate (D) or epitaxial layer (DEP1) on the one hand and the line (LH) on the other. For example, a NV center in diamond as substrate (D) or epitaxial layer (DEP1) can be brought in to or removed from the NV-state in this way by means of the choice of the electrical potential of the line (LH). By choosing the electric potential of a line located at such a small distance from a quantum dot (NV), the chain of quantum dots of an n-bit quantum register, for example, can thus be selectively interrupted. Thus, individual quantum dots or entire groups of quantum dots can be excluded from quantum manipulations. This ultimately enables targeted access to individual quantum dots without unintentional manipulation of the targeted detuned quantum dots. Thus, this procedure ultimately enables the addressing of individual quantum dots. Using this design, it is thus possible, for example, in a one-dimensional lattice of quantum dots (NV), to selectively control the participation of individual quantum dots (NV) in quantum operations by suitably adjusting a line-specific electric potential of the horizontal line (LH) in question, which is located above the individual paramagnetic center of the quantum dot (NV) on the surface (OF) of the substrate (D) or of the epitaxial layer (DEP1), on and off, thus achieving line-like resolution by selectively activating and deactivating the participation of individual paramagnetic centers of the quantum dots (NV) in quantum manipulations. Thus, we propose here a system comprising a substrate (D) optionally with an epitaxial layer (DEN), that comprises one or more first means (LH), and one or more second means (HD), to e.g. by means of static potentials of the first means (LH) with respect to the potential of the substrate (D) or the epitaxial layer (DEP1), to influence the Fermi level at the location of individual paramagnetic centers of individual quantum dots (NV) in such a way that these individual quantum dots (NV) are activated for participation in quantum state manipulations of their quantum state, or deactivated, where activated means that the respective quantum dots (NV) participate in manipulations of their quantum state, and where deactivated means that the respective quantum dots (NV) do not participate in manipulations of their quantum state. Preferably, the horizontal line (LH) is made of an optically transparent material, for example indium tin oxide (English abbreviation: ITO). From the paper Marcel Manheller, Stefan Trellenkamp, Rainer Waser, Silvia Karthäuser, “Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography”. Nanotechnology, Vol. 23, No. 12, March 2012. DOI: 10.1088/0957-4484/23/12/125302 it is known that the horizontal lines (LH) can be fabricated at a very small distance (e.g., 5 nm and smaller, e.g., 5 nm) from each other. From the paper J. Meijer. B. Burchard, M. Domhan, C. Wittmann. T. Gaebel, I. Pop. F. Jelezko, J. Wrachtrup, “Generation of single-color centers by focused nitrogen implantation” Appl. Opt. Phys. Len. 87, 261909 (2005): https://doi.org/10.1063/1.2103389 highly accurate placement of nitrogen atoms to generate NV centers is known. Measures for yield enhancement in the fabrication of the quantum dots, such as in the fabrication of NV centers in diamond, e.g., by means of sulfur implantation or n-doping of the substrate (D), are mentioned in the paper presented herein. In this respect, precise, yield-safe placement of the paramagnetic centers for fabrication of the quantum dots (NV) under the leads (LH) by means of focused ion implantation is possible without any problems. High spatial resolution fabrication of the leads (LH) is possible using electron beam lithography. The placement can be done so close to each other that two adjacent paramagnetic centers of two quantum dots (NV) under different Brent leads (LH, LH2) can interact with each other and form a quantum register based on the coupling of the electron configurations, which can be controlled via the leads (LH) using microwave signals.

[0840] By targeted deterministic and/or focused ion implantation, if necessary, of single or multiple impurity atoms into the material (MPZ) of the substrate (D) of the sensing element, a sufficiently coordinate-true fabrication of single or multiple quantum dots (NV) in the form of corresponding paramagnetic centers is possible. Refer to the paper J. Meijer, B. Burchard, M. Domhan, C. Wittman, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, “Generation of single-color centers by focused nitrogen implantation” Appl. Opt. Phys. Len. 87, 261909 (2005); https://doi.org/10.1063/1.2103389 is referenced here. When using a diamond as substrate (D) or epitaxial layer (DEP1), n-doping, for example with sulfur, can increase the yield of NV centers. Thus, accurate placement of quantum dots (NV) in the form of paramagnetic centers in a predictable manner spatially relative to the lead (LH) is possible and thus feasible. The line (LH) can also be made of doped silicon.

[0841] Preferably, the line (LH) is made of a material that is optically transparent at the wavelength of “green light” (LB). For example, this material of the line (LH) can be indium tin oxide, called ITO for short, or a similar, optically transparent and electrically non-conductive material.

[0842] FIG. 31 shows the combination of a paramagnetic center as quantum dot (NV) in a semiconductor material of a preferably semiconducting substrate (D) resp. an epitaxial layer (DEP1), for example of silicon or silicon carbide, with a MOS transistor (MOS) in this material, whereby the horizontal shield lines (SH1, SH2) represent the source and drain contacts of the transistor (MOS), while the first horizontal line (LH1) forms the gate of the MOS transistor (MOS) and is insulated from the material of the substrate (D) or the epitaxial layer (DEP1) by the gate oxide as further insulation (IS2). The pump radiation in the form of the “green light” (LB) is generated by a center (PZ).

[0843] FIG. 31 shows a device that can be housed inside a substrate (D) or inside an epitaxial layer (DEP1) and thus can be used in the preceding devices, and in which a light source (LED) is fabricated in the material of the substrate (D) or epitaxial layer (DEP1), which is used as a light source (LED) for the “green light”.

[0844] In the example of FIG. 31, an anode contact (AN) injects an electric current in to the substrate (D) or epitaxial layer (DEP1). To B. Burchard “Elektronische and optoelektronische Bauelemente and Bauelementstrukturen auf Diamantbasis” (Electronic and optoelectronic components and component structures based on diamond), dissertation, Hagen 1994 and to the document DE 4 322 830 A1 is referred to in this context. A cathode contact (KTH) extracts this electric current again from the substrate (D) or the epitaxial layer (DEP1). This diode has the function of the light source (LED) here. A center (PZ) located in the current path within the substrate (D) or the epitaxial layer (DEP1), serves as the radiation source of this light source (LED). In the case of diamond serving as the substrate (D) or the epitaxial layer (DEP1), this center (PZ) may be, for example, H3 center in the exemplary diamond material serving as the substrate (D) or epitaxial layer (DEP1). In this example, the center (PZ) emits “green light” (LB) upon a current flow of a pump current (1 pmp) in the substrate (D) or epitaxial layer (DEP1). Thus, in the case of diamond as a substrate (D) or as an epitaxial layer (DEP1), the exemplary H3 center emits “green light” (LB) upon a current flow of a pump current (1 pmp) in the diamond as a substrate (D) or as an epitaxial layer (DEP1) from the anode contact (AN) to the cathode contact (KTH). This “green light” (LB) from the center (PZ), for example said H3 center, can then be used to drive and possibly reset one or more quantum dots (NV) in the form of paramagnetic centers (NV). The centers (PZ) and/or the groups (PZC) of centers (PZ) can form a one- or two- or three-dimensional lattice within the substrate (D) or epitaxial layer (DEP1). In the case of a one-dimensional lattice, the centers (PZ) may, for example, be arranged in a circular shape around a common center point, in which case a quantum dot (NV) in the form of a paramagnetic center (NV) or several quantum dots (NV) is preferably located in the center point. Preferably, in one variant, the arrangement of centers PZ or groups (PZC) of centers (PZ) together with the arrangement of quantum dots (NV) in the form of paramagnetic centers (NV) forms a one-two or three-dimensional lattice, the unit cell of the lattice then comprising one or more centers (PZ) and/or one or more groups (PZC) of centers (PZ) on the one hand and one or more quantum dots (NV) in the form of paramagnetic centers (NV). It may be a translational and/or rotational lattice around a common symmetry axis or point.

[0845] It should be mentioned that the structure of FIG. 31 is suitable to interlace the center (PZ) with the quantum dot (NV) and possibly existing nuclear quantum bits (CI1.sub.1, CI1.sub.2, CI1.sub.3). If necessary, the optical path between the center (PZ) and the quantum dot (NV) can still be supplemented with optical functional elements of photonics such as optical waveguides, lenses, filters, apertures, mirrors, photonic crystals, etc., and modified if necessary. Reference is made at this point to the patent applications DE 10 2019 120 076.8, PCT/DE 2020/100 648 and DE 10 2019 121 028.3, which are still unpublished at the time of filing this paper, and the disclosure content of which forms part of this disclosure to the extent legally permissible.

[0846] The structure of FIG. 31 is very similar to that of FIG. 29, but in the example of FIG. 31, the quantum dot (NV) is now part of an exemplary quantum ALU (QUALU1′). In the example of FIG. 31, the quantum ALU (QUALU1′) comprises exemplary the quantum dot (NV) and a first nuclear quantum dot (CI11) and a second nuclear quantum dot (CI12) and a third nuclear quantum dot (CI13). The structure of the MOS transistor (MOS) with this quantum ALU (QUALU1′) corresponds exemplarily to the first quantum bit (QUB1) of FIG. 19. The first horizontal shield line (SH1) is connected to the substrate (D) or the epitaxial layer (DEP1) via the first horizontal contact (K11) of the first quantum bit (QUB1). The second horizontal shield line (SH2) is connected to the substrate (D) or the epitaxial layer (DEP1) via the second horizontal contact (K22) of the second quantum bit (QUB2). A further isolation (IS) isolates the horizontal line (LH1) from the substrate (D) or the epitaxial layer (DEP1). Preferably, the substrate (D) or epitaxial layer (DEP1) comprises essentially isotopes without nucleus magnetic moment μ at least in the quantum ALU (QUALU1′) region. Preferably, the substrate (D) or the epitaxial layer (DEP1) comprises, at least in the region of the quantum ALU (QUALU1′), essentially only one isotope type of the possible isotopes without nucleus magnetic moment μ per element.

[0847] In the case of diamond as substrate (D) or epitaxial layer (DEN), the substrate (D) or epitaxial layer (DEP1) comprises essentially only isotopes of carbon without magnetic moment μ. Preferably, these are the isotopes .sup.12C and .sup.14C. Preferably, the substrate (D) or the epitaxial layer (DEP1) comprises essentially only the isotope .sup.12C.

[0848] In the case of silicon as substrate (D) or epitaxial layer (DEP1), the substrate (D) or epitaxial layer (DEP1) comprises essentially only isotopes of silicon without magnetic moment μ. Preferably, these are the isotopes .sup.28Si and .sup.30Si. Preferably, the substrate (D) or the epitaxial layer (DEP1) comprises essentially only the isotope .sup.28Si.

[0849] In the case of silicon carbide as substrate (D) or epitaxial layer (DEP1), the substrate (D) or epitaxial layer (DEP1) comprises essentially only isotopes of silicon without magnetic moment μ and only isotopes of carbon without magnetic moment μ. Preferably, these are the isotopes .sup.28Si and .sup.30Si and the isotopes .sup.12C and .sup.14C. Preferably, the substrate (D) or epitaxial layer (DEP1) comprises essentially only the isotope .sup.28Si and the isotope .sup.12C.

[0850] The term “essentially” means here that the total fraction K.sub.IG of isotopes with magnetic moment of an element under consideration, which is part of the substrate (D) or the epitaxial layer (DEP1), based on 100% of this element under consideration, is reduced to a fraction K.sub.IG′ of isotopes with magnetic moment of an element under consideration, based on 100% of this element under consideration, in comparison with the natural total fraction K.sub.IG given in the above tables. Whereby this fraction K.sub.IG′ is smaller than 50%, better smaller than 20%, better smaller than 10%, better smaller than 5%, better smaller than 2%, better smaller than 1%, better smaller than 0.5%, better smaller than 0.2%, better smaller than 0.1% of the total natural fraction K.sub.IG for the element under consideration in the action range of the paramagnetic impurities (NV) used as quantum dots (NV) and/or the nuclear spins used as nuclear quantum dots (CI).

[0851] If the contacts (KH11, KH22) are made by doping the substrate (D) or the epitaxial layer (DEP1) with isotopes with a nucleus magnetic moment μ, the distance (spacing) between the nearest of the epitaxial layer (DEP1) with isotopes of nucleus magnetic moment μ, the distance (spacing) between the edge of a contact (KH11, KH22) closest to a component of the quantum ALU (QUALU1′) and this component of the quantum ALU (QUALU1′) should be greater than the nucleus-nucleus coupling distance between a doping atom of the contact in question (KH11, KH22) and the respective nuclear quantum dot (CI11, CI12, CI113) of the quantum ALU (QUALU1′) and greater than the nucleus-electron coupling range between a dopant atom of the respective contact (KH11, KH22) and the quantum dot (NV) of the quantum ALU (QUALU1′). Experience has shown that 500 nm is sufficient in this case. In the elaboration of the disclosure, several μm were used as distance (Abst). If, for whatever reason, this distance (Abst) has to be fallen short of, the doping of the contacts (KH11, KH22) should preferably be carried out essentially by means of isotopes which do not have a nucleus magnetic moment μ.

[0852] The term “essentially” means here that the total fraction K.sub.IG of isotopes with magnetic moment of an element under consideration, which is part of the contact (KH11, KH22), related to 100% of this element under consideration, is reduced to a fraction K.sub.IG′ of isotopes with magnetic moment of an element under consideration, related to 100% of this element under consideration, compared to the natural total fraction K.sub.IG given in the above tables. Whereby this fraction K.sub.IG′ is smaller than 50%, better smaller than 20%, better smaller than 10%, better smaller than 5%, better smaller than 2%, better smaller than 1%, better smaller than 0.5%, better smaller than 0.2%, better smaller than 0.1% of the total natural fraction KIG for the element under consideration in the action range of the paramagnetic impurities (NV) used as quantum dots (NV) and/or the nuclear spins used as nuclear quantum dots (CI).

[0853] Preferably, in the case of silicon or silicon carbide as the material of the substrate (D) or epitaxial layer (DEP1), the further insulation (IS2) is implemented as a gate oxide. A preferred fabrication method in this case is thermal oxidation. Preferably, the gate oxide is then essentially made of isotopes without magnetic moment.

[0854] The term “essentially” means here that the total fraction K.sub.IG of isotopes with magnetic moment of an element under consideration, which is part of the further isolation (IS2), related to 100% of this element under consideration, is reduced to a fraction K.sub.IG′ of isotopes with magnetic moment of an element under consideration related to 100% of this element under consideration, compared to the natural total fraction K.sub.IG given in the above tables. Whereby this fraction K.sub.IG′ is smaller than 50%, better smaller than 20%, better smaller than 10%, better smaller than 5%, better smaller than 2%, better smaller than 1%, better smaller than 0.5%, better smaller than 0.2%, better smaller than 0.1% of the total natural fraction K.sub.IG for the element under consideration in the action range of the paramagnetic impurities (NV) used as quantum dots (NV) and/or the nuclear spins used as nuclear quantum dots (CI).

[0855] The line (LH1), which forms the gate of the transistor (MOS), is made of indium tin oxide (ITO), for example. However, this has the disadvantage that it is not possible without nucleus magnetic momentum. In this case, the distance (d1) between the quantum ALU (QUALU1′) or the quantum dot (NV) or the nuclear quantum dots (CI1.sub.1, CI1.sub.2, CI1.sub.3) must be so large that the nucleus magnetic momentum of the corresponding isotopes of the line (LH1) cannot interact with the quantum ALU (QUALU1′) or the quantum dot (NV) or the nuclear quantum dots (CI1.sub.1, CI1.sub.2, CI1.sub.3).

[0856] Another possibility for realizing the shielding lines (SH1, SH2) and the line (LH1) is, for example, the use of titanium, whereby isotopes without nucleus magnetic moment μ are preferred. Particularly preferred here are the titanium isotope .sup.46Ti and/or the titanium isotope .sup.48Ti and/or the titanium isotope .sup.50Ti for the production of corresponding titanium lines.

[0857] Thus, in case of corresponding spatial proximity of a shielding line (SH1, SH2) or the line (LH), the corresponding line is preferably made essentially of isotopes without nucleus magnetic moment μ. The term “essentially” means here that the total fraction K.sub.IG of the isotopes with magnetic moment of an element under consideration, which is part of a line (SH1, SH2, LH1), related to 100% of this element under consideration, is reduced in comparison with the natural total fraction K.sub.IG given in the above tables to a fraction K.sub.IG′ of the isotopes with magnetic moment of an element under consideration related to 100% of this element under consideration. Whereby this fraction K.sub.IG′ is smaller than 50%, better smaller than 20%, better smaller than 10%, better smaller than 5%, better smaller than 2%, better smaller than 1%, better smaller than 0.5%, better smaller than 0.2%, better smaller than 0.1% of the total natural fraction K.sub.IG for the element under consideration in the action range of the paramagnetic impurities (NV) used as quantum dots (NV) and/or the nuclear spins used as nuclear quantum dots (CI).

[0858] In the example of FIG. 31, the first vertical line (LV1) of FIG. 19 is drawn and electrically isolated by insulation (IS) from the first shield line (SH1) and the second shield line (SH2) and the first horizontal line (LH1) and thus from the substrate (D) and the epitaxial layer (DEN).

[0859] In the case of silicon carbide or silicon as substrate (D) or epitaxial layer (DEP1), for example, the further insulation (IS2) or the insulation (IS) may consist of silicon oxide. In the case, for example, the insulation (IS) and/or the further insulation (IS) preferably comprise essentially only isotopes without nucleus magnetic moment. In the case, for example, the insulation (IS) and/or the further insulation (IS) preferably comprise essentially only isotopes .sup.28Si and .sup.30Si and .sup.16O and .sup.18O without nucleus magnetic moment. In the case, for example, the insulation (IS) and/or the further insulation (IS) most preferably comprise essentially only isotopes .sup.28Si and .sup.16O without nucleus magnetic moment. The term “essentially” means here that the total fraction K.sub.IG of isotopes with magnetic moment of an element under consideration, which is pan of the further insulation (IS2) or of a gate oxide, relative to 100% of this element under consideration, is reduced to a fraction KK.sub.IG′ of isotopes with magnetic moment of an element under consideration relative to 100% of this element under consideration, compared to the natural total fraction K.sub.IG given in the above tables. Whereby this fraction KK.sub.IG′ is smaller than 50%, better smaller than 20%, better smaller than 10%, better smaller than 5%, better smaller than 2%, better smaller than 1%, better smaller than 0.5%, better smaller than 0.2%, better smaller than 0.1% of the total natural fraction K.sub.IG for the element under consideration in the action range of the paramagnetic impurities (NV) used as quantum dots (NV) and/or the nuclear spins used as nuclear quantum dots (CI).

[0860] As already explained in FIG. 1, the first horizontal line (LH1) and the first vertical line (LV1) cross over the quantum dot (NV). In the case of a semiconducting material as the material of the substrate (D) or the epitaxial layer (DEP1), for example in the case of silicon or silicon carbide as the material of the substrate (D) or the of the epitaxial layer (DEN), the quantum bit (QUB1) forms a MOS transistor (MOS) in which a quantum dot (NV) and/or a nucleus-electron quantum register (CEQUREG) and/or, as here, a quantum ALU (QUALU1′) is located in the channel region of the transistor (MOS). It is also conceivable that more than one quantum dot (NV) and/or more than one nucleus-electron quantum register (CEQUREG) and/or more than one quantum ALU (QUALU1′) is located there. Preferably, the at least two quantum dots (NV1, NV2) then form a two-bit quantum register, but the quantum dots can only be accessed by a construction of crossed lines (LH1, LV1). These crossing lines (LH1, LH2) represent a means for generating a magnetic field with a circularly rotating magnetic flux density vector B at the location of the quantum dot (NV) or at the location of the nuclear quantum dots (CI1.sub.1, CI1.sub.2, CI1.sub.3), which can be used to manipulate the quantum state of the quantum dot (NV) or the nuclear quantum dots (CI1.sub.1, CI1.sub.2, CI1.sub.3). The readout of the state of the quantum dot (NV) is preferably performed by irradiation with “green light” and extraction of the associated quantum state-dependent photocurrent via the contacts (K11, K22) by means of an extraction voltage (V.sub.ext).

[0861] FIG. 32 shows a structure of a substrate (D) with a device for extracting the photocurrent (I.sub.Ph) of a paramagnetic center as a quantum dot (NV). An extraction voltage (Von) is applied between a first shield line (SH1) and a second shield line (SH2). The first shield line (SH1) electrically contacts the substrate (D) or epitaxial layer (DEP1) by means of a first contact (KH11). The second shield line (SH2) electrically contacts the substrate (D) or the epitaxial layer (DEP1) by means of a second contact (KH22). The first shield line (SH1) is spaced apart from the second shield line (SH2). Apart from the first contact (KH11) and the second contact (KH22), the first shield line (SH1) and the second shield line (SH2) are otherwise electrically insulated from the substrate (D) and the epitaxial layer (DEP1), respectively, by a further insulation (IS2). Between the first shield line (SH1) and the second shield line (SH2), in the example here, there is a quantum dot (NV) in the form of a paramagnetic center. The quantum dot is located at a depth (d1) below the surface (OF). If the quantum dot is irradiated with “green light”, an electric photocurrent (lph), which depends on the quantum state of the quantum dot (NV), flows between the first shield line (SH1) and the second shield line (SH2) when an extraction voltage (Venn) is applied. If the substrate (D) or epitaxial layer (DEP1) is made of diamond and it is an NV center, a photocurrent (lph) flows when the NV center is in the NV-state. In this context, reference is made to the writings Petr Siyushev, Milos Nesladek. Emilie Bourgeois. Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi Isoya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond” Science Feb. 15, 2019, Vol. 363, Issue 6428, pp. 728-731, DOI: 10.1126/science.aav2789 and Mathias H. Metsch, Katharina Senkalla, Benedikt Tratzmiller, Jochen Scheuer, Michael Kern. Jocelyn Achard, Alexandre Tallaire, Martin B. Plenio, Pew Siyushev, and Fedor Jelezko, “Initialization and Readout of Nuclear spins via a Negatively Charged Silicon-Vacancy Center in Diamond” Phys. Rev. Len. 122, 190503-Published 17 May 2019 pointed.

[0862] FIG. 33 shows a sub-device of FIG. 20 in the form of a quantum ALU, where the sub-device is a transistor. The transistor corresponds to that of FIG. 31.

[0863] FIG. 34 shows a simplified top view of the surface of a substrate (D) with, as an example, eight quantum bits (NV1 to NV8), which are arranged and indicated as black circles equally spaced in a vertical line. For clarity, the quantum dots are marked with a dashed ellipse and given a common reference sign (NV1-NV8). Common to all eight quantum bits (QUB1 to QUB8) is that the first vertical line (LV1) passes over the respective quantum dots (NV1 to NV8) as drawn in FIG. 1. At the beginning and at the end of the first vertical line (LV1) there is a bond pad (contact area).

[0864] To the left and right of the first vertical line (LV1), the first vertical shielding line (SV1) and the second vertical shielding line (SV2) are routed parallel to the first vertical line (LV1) and electrically isolated from each other, as an example. The first vertical shielding line (SV1) and the second vertical shielding line (SV2) each start and end in a bond pad. Perpendicular to the first vertical line (LV1), for each quantum dot of the eight quantum dots (NV1 to NV8), a horizontal line associated with the respective quantum dot of the eight quantum dots (NV1 to NV8), of eight associated horizontal lines (LH1 to LH8) crosses the first vertical line (LV1) and the first vertical shielding line (SV1) and the second vertical shielding line (SH2) exactly above an associated quantum dot of the eight quantum dots (NV1 to NV8). Between each two horizontal lines, one horizontal shield line of the new horizontal shield lines (SH1 to SH9) crosses the first vertical line (LV1) and the first vertical shield line (SV1) and the second vertical shield line (SH2). The first horizontal shield line (SH1) crosses the first vertical line (LV1) and the first vertical shield line (SV1) and the second vertical shield line (SH2) above the first quantum dot (NV1). The ninth horizontal shield line (SH9) crosses the first vertical line (LV1) and the first vertical shield line (SV1) and the second vertical shield line (SH2) below the eighth quantum dot (NV8). Each of these nine horizontal shield lines (SH1 to SH9) and each of the eight horizontal lines (LH1 to LH8) starts with a bond pad and ends with a bond pad. Preferably, this structure is fabricated by electron beam lithography. Preferably, the cross-section of each of the quantum bits corresponds to, for example, FIG. 15.

[0865] In the following, it can be assumed that such a substrate (D) is incorporated in to a larger system.

[0866] FIG. 35 corresponds to FIG. 34 with the difference that no horizontal shield lines are provided. Instead, the freed spaces are used for further quantum bits, so that seventeen quantum dots (NV1 to NV17) can be controlled with the same space requirement but greater crosstalk.

[0867] FIG. 36 shows the substrate of FIG. 35 installed in a control system similar to FIG. 23. The system is shown rotated by 90° so that the vertical lines now run horizontally and the horizontal lines now run vertically. The system is greatly simplified. Each of the lines (LV1, LH1 to LH17) is driven by a module (MOD). The modules (MOD) are controlled by the control device (μC) via a control bus (CD). On the other side of the substrate (D), the lines (LV1, LH1 to LH17) are all terminated in the example of FIG. 36 with a resistor (50Ω) corresponding to the characteristic impedance of the respective line to prevent reflections. The first vertical shield line (SH1) and the second vertical shield line contact the substrate (D) above and below the quantum dots of the substrate (D), so that by means of an extraction voltage source (V.sub.ext) providing an extraction voltage (V.sub.ext), the photoelectrons and photo-charges, respectively, can be extracted. Preferably, the substrate (D) has a backside contact that is at a defined potential. The control device (μC) controls that of an extraction voltage source (V.sub.ext) and an amperemeter (A) to measure this photocurrent (I.sub.ph), allowing the evaluation of the states of the quantum dots. The other modules are drawn small. An exemplary module (MOD) is drawn a little bit larger for the modules. A DC voltage source (V.sub.DC) is connected to the first vertical line through a first impedance (L1) or filter circuit. The exemplary first impedance (L1) or first filter circuit ensures that the microwave and radio wave signals on the first vertical line are not modified by the DC voltage from the DC voltage source (V.sub.DC). The exemplary DC voltage source (V.sub.DC) feeds a DC current dependent on the terminating resistor (50Ω) in to the first vertical line (LV1) if required and can thus detune the resonance frequencies of the quantum dots.

[0868] A radio wave source feeds a radio wave frequency in to the first vertical line on demand. A second impedance (L2) or a second filter circuit preferably decouples the radio wave source and the other sources (V.sub.DC, V.sub.MW) of the module from the radio wave source (V.sub.RF).

[0869] An undrawn third impedance or filter circuit preferentially decouples the microwave source and the other sources (V.sub.DC, V.sub.RW) of the module from the microwave source (V.sub.RF).

[0870] Preferably, all lines are controlled from one side by means of such a module and are preferably terminated with a characteristic impedance on the other side. Preferably, all lines are designed as triplate lines with defined characteristic impedance without joints.

[0871] The control device (μC) controls the entire device and communicates via a data bus (DB) with a higher-level external computer system that controls the quantum computer system.

[0872] FIG. 37 shows an exemplary transistor operated as a quantum computer in a simplified schematic view from above.

[0873] As an example, we assume that the transistor is manufactured in isotopically pure .sup.28Si silicon. A fabrication in other mixed crystals of one or more elements of the IV, main group without a nucleus magnetic moment μ is also conceivable. In this respect, too, the transistor is only exemplary here.

[0874] On the left, a first doped region (DOT) is drawn to represent the source region of the transistor. The doping is typically done with isotopes of the III. The doping is typically done with isotopes of the III, main group or the V, main group of the periodic table of the elements. However, these all have a non-zero nucleus magnetic moment it, which can interfere with the quantum dots (NV1, NV2) and the nuclear quantum dots (CI1.sub.1, CI1.sub.2, CI1.sub.3, CI2.sub.1, CI2.sub.2). Therefore, a minimum distance should be maintained between each of the source region doping and the drain region doping on the one hand and the quantum dots (NV1, NV2) and the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22) on the other hand. Spacings of more than 1μ have proven to be effective. The corresponding second doped region (DOT) is drawn on the right to represent the drain region of the transistor. The source contact (SO) connects the left doped source contact region (DOT) to the first vertical shield line (SV1). The drain contact (DR) connects the right doped drain contact region (DOT) to the second vertical shield line (SV2). Between the first vertical shield line (SV1) and the second vertical shield line (SV1) is the first vertical line (LV1). In this example, the first vertical line (LV1) represents the gate of the transistor. The first vertical line is electrically insulated from the substrate (D) by the further insulation (IS2) in the form of the gate oxide. The further insulation is preferably very thin. It preferably has a thickness of less than 10 nm. Preferably, the first vertical line is made transparent to the excitation radiation, the “green light”. Preferably, the first vertical line (LV1), and thus the gate contact of the transistor, is made sufficiently thin for this purpose or is made of indium-zinc oxide or other transparent and electrically conductive materials. The transistor of FIG. 37 comprises exemplarily two quantum ALUs with two quantum dots (NV1, NV2). The first quantum ALU comprises the first quantum dot (NV1) and the first nuclear quantum dot (CI11) of the first quantum ALU and the second nuclear quantum dot (CI12) of the first quantum ALU and the third nuclear quantum dot (CI13) of the first quantum ALU. The second quantum ALU comprises the second quantum dot (NV2) and the first nuclear quantum dot (CI21) of the second quantum ALU and the second nuclear quantum dot (CI22) of the second quantum ALU.

[0875] The first horizontal line (LH1) crosses the first vertical line (LV1) in the area of the first quantum dot (NV1).

[0876] The second horizontal line (LH2) crosses the first vertical line (LV1) in the area of the second quantum dot (NV2).

[0877] The first horizontal line (LH1) also crosses the first vertical shielding line (SV1) and the second vertical shielding line (SV2). The second horizontal line (LH2) also crosses the first vertical shielding line (SH1) and the second vertical shielding line (SH2).

[0878] Above the first horizontal line (LH1) runs the first horizontal shielding line (SH1).

[0879] Between the first horizontal line (LH1) and the second horizontal line (LH2) runs the second horizontal shielding line (SH2).

[0880] Below the second horizontal line (LH2) runs the third horizontal shielding line (SH3).

[0881] The horizontal lines (SH1, SH2, SH3, LH1, LH2) are also preferably transparent to the excitation radiation, the “green light”. Preferably, the first horizontal line (LH1), the second horizontal line (LH2), the first horizontal shielding line (SH1), the second horizontal shielding line (SH2) and the third horizontal shielding line (SH2) are made sufficiently thin for this purpose or are made of indium-zinc oxide or other transparent and electrically conductive materials. The first horizontal line (LH1), the second horizontal line (LH2), the first horizontal shielding line (SH1), the second horizontal shielding line (SH2) are electrically insulated by the insulation (IS) from the first vertical line (LV1), the first vertical shielding line (SV1) and the second vertical shielding line (SV2). Preferably, the insulation (IS) is as thin as the further insulation (IS2) in the area of the transistor.

[0882] Preferably, crossing lines in the area of this transistor cross at an angle of 90°.

[0883] In the region designated GOX, the further insulation (IS2) is typically made thinner than in the rest of the region. Since the vertical distance of the first quantum dot (NV1) from the second quantum dot (NV2) should be very small in the order of 20 nm and at the same time the horizontal distance of the contact dopants (DOT) is typically in the μm range, the drawing is extremely distorted to show the basic principles.

[0884] FIG. 38 shows an exemplary quantum computer system (QUSYS) with an exemplary central control unit (ZSE). In this example, the exemplary central control unit (CCU) is connected to a plurality of quantum computers (QC1 to QC16) via a preferably bidirectional data bus (DB). Preferably, such a quantum computing system comprises more than one quantum computer (QC1 to QC16). In the example of FIG. 38, each of the quantum computers (QC1 to QC16) comprises a control device (μC). In the example of FIG. 38. 16 quantum computers (QC1 to QC16) are connected to the central control device (ZSE) via the data bus (DB). The data bus (DB) can be any data transmission system. For example, it can be wired, wireless, fiber optic, optical, acoustic, radio-based. In the case of a wired system, the data bus may be all or part of a single-wire data bus, such as a UN bus, or a two-wire data bus, such as a CAN data bus. The data bus may act, in whole or in subsections, a more complex data bus with multiple conductors and/or multiple logical levels, etc. The data bus may be wholly or in subsections an Ethernet data bus. The data bus may consist entirely of one type of data bus or may be composed of different data transmission links. The data bus (DB) may be arranged in a star configuration as in the example of FIG. 38. The data bus can also be implemented wholly or in pans, for example as in a LIN data bus, as a concatenation of the bus nodes in the form of the quantum computers (QC1 to QC16), in which case each of the control devices of the relevant quantum computers of this part of the quantum computer system preferably has more than one data interface in order to be able to connect more than one data bus to the relevant quantum computer. It is conceivable that one or more quantum computers of the quantum computers (QC1 to QC16) then act as bus masters and thus as central control devices (CSEs) for subordinate sub-networks of the quantum computer system.

[0885] It is therefore further conceivable that the central control device (ZSE) of the quantum computer system (QUSYS) is the control device (μC) of a quantum computer and/or that the central control device (ZSE) of the quantum computer system (QUSYS) is a quantum computer with a control device (μC), whereby here, in the case of FIG. 38, reference is made to the “normal” computer properties of the control device (μC) which control the quantum computer system (QUSYS) as the central control device (ZSE). From the perspective of the quantum computers (QC1 to QC16), the central control device (ZSE) corresponds to an external monitoring computer of the quantum computer system (QUSYS).

[0886] The data transmission network of the quantum computer system (QSYS) may correspond in whole or in pans to a linear chain of bus nodes in the form of the quantum computers (QC1 to QC16) along pan of the data bus (DB) or along the data bus (DB), which may also be closed to form a ring (keyword token ring).

[0887] The data transmission network of the quantum computer system (QSYS) can be entirely or partially a star structure of bus nodes in the form of the quantum computers (QC1 to QC16), which are connected to one or more data lines and/or data transmission media. A star structure is present, for example, in the case of radio transmission of the data. Also, one, several or all quantum computers may be connected to the central control equipment (CSE) via a point-to-point connection. In this case, the central control unit (CSE) must have a separate data interface for each point-to-point connection.

[0888] The data transmission network of the quantum computer system (QSYS) can be designed as a tree structure, where individual quantum computers can, for example, have more than one data bus interface and serve as bus masters, i.e., central control equipment (CSE) for subnets of the data transmission network of data buses and quantum computers.

[0889] The quantum computer system (QUSYS) can thus be hierarchically structured, with the control devices (μC) of individual quantum computers being Central Control Equipment (CSE) of sub-quantum computer systems. The sub-quantum computer systems are themselves quantum computer systems (QUSYS). The central control device (ZSE) of the sub-quantum computer system is thereby preferably itself a quantum computer, which is itself preferably again part of a higher-level quantum computer system (QUSYS).

[0890] This hierarchization allows different computations to be processed in parallel in different sub-quantum computer systems, with the number of quantum computers used being chosen differently depending on the task.

[0891] Preferably, the quantum computing system thus comprises multiple computing units coupled together. Such a computing unit may use an artificial intelligence program that may be coupled to the quantum computers and/or the quantum registers and/or the quantum bits. In this regard, both the input to the artificial intelligence program may depend on the state of the quantum dots of these components of the quantum computing system, and the control of the quantum bits and quantum dots of these components of the quantum computing system may depend on the results of the artificial intelligence program. The artificial intelligence program can be executed both in the central control unit (ZSE) and in the control units (μC) of the quantum computer. In this case, only parts of the artificial intelligence program can be executed in the central control device (ZSE), while other parts of the artificial intelligence program are executed in the control devices (μC) of quantum computers within the quantum computer system. Also, in this regard, only parts of the artificial intelligence program may be executed in a control device (μC) of one quantum computer, while other parts of the artificial intelligence program are executed in other control devices (μC) of other quantum computers within the quantum computer system. This execution of an artificial intelligence program can thus be distributed across the quantum computer system or concentrated in one computer unit. In this case, the artificial intelligence program interacts with quantum dots (NV) of the quantum computers. The computer unit can therefore in reality also be a system of computer units. For example, a computing unit may comprise a thus the central control device (ZSE) of a quantum computer system (QSYS) with one or more quantum dots (NV) and/or one or more control devices (μC) of a quantum computer with one or more quantum dots (NV). More complex topologies with additional intermediate computing nodes are conceivable. The computing unit, which may also be a composite of computing units as described, executes an artificial intelligence program. Such an artificial intelligence program can be, for example, a neural network model with neural network nodes. The neural network model typically uses one or more input values and/or one or more input signals. The neural network model, typically provides one or more output values and/or one or more output signals. It is now proposed herein to complement the artificial intelligence program with a program that performs one or more of the above quantum operations on one or more quantum computers. This coupling MAY BE done EXAMPLE IN THE ONE direction by making the control of one or more quantum dots (NV), in particular by means of horizontal lines (LH) and/or vertical lines (LV), depend on one or more output values and/or one or more output signals of the neural network model. IN the other direction, states of one or more quantum dots are read out at a point in time and used as input in the artificial intelligence program, in this example the neural network model. The value of one or more input values and/or one or more input signals of the artificial intelligence program, in this example the neural network model, then depends on the state of one or more of the quantum dots (NV).

Glossary

Green Light

[0892] Green light is used in the technical teachings of the present disclosure for resetting the quantum dots (NV). It has been shown that in connection with NV centers as quantum dots (NV) in diamond as the substrate (D) and/or the epitaxial layer (DEP1), light with a wavelength of at most 700 nm and at least 500 nm is particularly suitable in principle. In connection with other materials of the substrate (D) and/or the epitaxial layer (DEP1), a completely different wavelength range can fulfill the same functions. In this respect, green light is to be understood here as a function definition, where the function is to be understood as equivalent to the function in the system with NV centers in diamond as quantum dots (NV). In particular, when using a NV center (NV) as a quantum dot (NV), the green light should have a wavelength in a wavelength range of 400 nm to 700 nm wavelength and/or better 450 nm to 650 nm and/or better 500 nm to 550 nm and/or better 515 nm to 540 nm. A wavelength of 532 nm wavelength is preferred. Light that is used when using quantum dot types other than NV centers in diamond to perform the same functions is also referred to as “green light”. In this respect, such examples are encompassed by claims in which “green light” is mentioned.

Horizontal

[0893] The property word “horizontal” is used in this disclosure as part of the name of the device parts and associated quantities unless explicitly stated otherwise. This is done because the quantum bits are numbered consecutively. This makes it easier to distinguish columns (vertical) and rows (horizontal) within two-dimensional quantum bit arrays. Accordingly, a “horizontal line” is a line within such a two- or one-dimensional array that is routed along a row. The associated current is then called, for example. “horizontal line current” in an analogous way to give an example of the naming of a quantity.

Isotopically Pure

[0894] Isotopically pure in the sense of this disclosure is a material when the concentration of isotopes other than the basic isotopes that dominate the material is so low that the technical purpose is achieved to a degree sufficient for the production and sale of products with an economically sufficient production yield. This means that disturbances emanating from such isotopic impurities do not interfere with the functional efficiency of the quantum bits, or at most only to a sufficiently small extent. In terms of diamond, this means that the diamond preferably consists essentially of .sup.12C isotopes as basic isotopes, which have no magnetic moment.

Proximity

[0895] When the present disclosure refers, for example, to a “device that is located in the proximity of the perpendicular line point (I.OTP) or at the perpendicular line point (I.OTP) for generating a circularly polarized microwave field,” the term proximity is to be understood as meaning that this device exerts or can exert an intended effect with its polarized microwave field or otherwise on the quantum dot (NV), which is located on the perpendicular line (LOT), an intended effect, where intended is to be understood, in turn, in the context of the disclosure provided herein, to mean that by the intended effect a process step can be performed in the functional steps for the intended use of a device proposed herein.

Pure Substrate

[0896] A pure substrate in the sense of the present disclosure exists if the concentration of atoms other than the base atoms dominating the material of the substrate is so low that the technical purpose is achieved to a degree sufficient for the production and sale of products with an economically sufficient production yield. This means that disturbances emanating from such atomic impurities do not interfere with the functionality of the quantum bits, or at most only to a sufficiently small extent. In terms of diamond, this means that the diamond preferably consists essentially of C atoms and comprises no or only an insignificant number of impurity atoms. Preferably, the substrate contains as few ferromagnetic impurities as possible, such as Fe and/or Ni, since their magnetic fields can interact with the spin of the quantum dot (NV).

Insignificant Phase Rotation

[0897] An insignificant phase rotation of the state vector of a quantum dot, in accordance with the present disclosure, is a phase rotation that can be considered insignificant or correctable for operation and operability. It may therefore be assumed to be, as a first approximation, slightly zero.

Vertical

[0898] The property word “vertical” is used in this disclosure as part of the name of the device parts and associated quantities unless explicitly stated otherwise. This is done because the quantum bits are numbered consecutively. This makes it easier to distinguish columns (vertical) and rows (horizontal) within two-dimensional quantum bit arrays. A “vertical line” is thus a line within such a two- or one-dimensional array, which is routed along a column. The associated current is then referred to, for example, in an analogous manner as “vertical line current” to give an example of the naming of a quantity.

TABLE-US-00042 LIST OF REFERENCE SYMBOLS 50Ω terminating resistor as an example of realization of a receiver stage (HS1, HS2, HS3, VS3). In the example shown in FIG. 36, the terminating resistors terminate the horizontal and vertical lines to prevent reflections. Depending on the construction of the lines, their characteristic impedance value may differ. In this case, the value of the terminating resistor should be adjusted accordingly. α crossing angle at which the vertical line (LV) and the horizontal line (LH) cross. This crossing angle preferably has an angular value of π/2. α11 angle of intersection at which the first vertical line (LV1) and the first horizontal line (LH1) cross. This crossing angle preferably has an angular value of π/2. α12 angle of intersection in which the second vertical line (LV2) and the first horizontal line (LH1) cross. This crossing angle preferably has an angular value of π/2. A amperemeter. In the example of FIG. 36, the amperemeter, which is a current sensor there, is used to obtain a reading for the photocurrent generated by the quantum dots of the quantum computer. In the example of FIG. 36, the amperemeter is controlled and read out by the control device (μC). β angle of π/2 (right angle) between perpendicular line (LOT) and surface (OF) of substrate (D) or epitaxial layer (DEPI); B.sub.CI flux density vector of the circularly polarized electromagnetic wave field for manipulating the nuclear quantum dot (CI) at the location of the nuclear quantum dot (CI). In FIG. 2, the rotation of this flux density vector is drawn for better understanding. In FIG. 2, the rotation of the flux density vector is achieved by controlling the horizontal line (LH) with a horizontal current component (IH) modulated with a horizontal nucleus-nucleus radio wave frequency (f.sub.RWHCC) with a horizontal modulation, and by controlling the vertical line (LV) with a vertical current component (IV) modulated with a vertical nucleus- nucleus radio wave frequency (f.sub.RWVCC) with a vertical modulation shifted +/−π/2 in phase with respect to the horizontal modulation. The vertical nucleus-to-nucleus radio wave frequency (f.sub.RWVCC) and the horizontal nucleus-to-nucleus radio wave frequency (f.sub.RWHCC) are typically equal to each other and thus typically equal to a common nucleus-to-nucleus radio wave frequency (f.sub.RWCC). B.sub.CI1 flux density vector of the circularly polarized electromagnetic wave field for manipulating the first nuclear quantum dot (CI1) at the location of the first nuclear quantum dot (CI1); B.sub.CI2 flux density vector of the circularly polarized electromagnetic wave field for manipulating the second nuclear quantum dot (CI2) at the second nuclear quantum dot (CI2) location; B.sub.CI3 flux density vector of the circularly polarized electromagnetic wave field for manipulating the third nuclear quantum dot (CI3) at the third nuclear quantum dot (CI3) location; B.sub.NV flux density vector of the circularly polarized electromagnetic wave field for manipulation of the quantum dot (NV) at the location of the quantum dot (NV). In FIG. 1, the rotation of this flux density vector is drawn for better understanding. In FIG. 1, the rotation of the flux density vector is achieved by controlling the horizontal line (LH) with a horizontal current component (IH) modulated with a horizontal electron-electron microwave frequency (f.sub.MWH) with a horizontal modulation, and by controlling the vertical line (LV) with a vertical current component (IV) modulated with a vertical electron-electron microwave frequency (f.sub.MWV) with a vertical modulation shifted +/−π/2 in phase with respect to the horizontal modulation. The vertical electron-electron microwave frequency (f.sub.MWV) and the horizontal electron-electron microwave frequency (f.sub.MWH) are typically equal to each other and thus typically equal to a common electron-electron microwave frequency (f.sub.MW). B.sub.NV1 flux density vector of the circularly polarized electromagnetic wave field to manipulate the first quantum dot (NV1) at the location of the first quantum dot (NV1); B.sub.NV2 flux density vector of the circularly polarized electromagnetic wave field to manipulate the second quantum dot (NV2) at the location of the second quantum dot (NV2); B.sub.NV3 flux density vector of the circularly polarized electromagnetic wave field to manipulate the third quantum dot (NV3) at the location of the third quantum dot (NV3); B.sub.VHNV1 first virtual horizontal magnetic flux density vector at the location of the first virtual horizontal quantum dot (VHNV1); B.sub.VHNV2 second virtual horizontal magnetic flux density vector at the location of the second virtual horizontal quantum dot (VHNV2); B.sub.VVNV1 first virtual vertical magnetic flux density vector at the location of the first virtual vertical quantum dot (VVNV1); B.sub.VVNV2 second virtual vertical magnetic flux density vector at the location of the second virtual vertical quantum dot (VVNV2); CB control bus; CBA control Unit A; CBB control Unit B; CI nuclear quantum dot; CI1 first nuclear quantum dot; CI1.sub.1 first nuclear quantum dot (CI1.sub.1) of the first quantum ALU (QUALU1); CI1.sub.2 second nuclear quantum dot (CI1.sub.2) of the first quantum ALU (QUALU1); CI1.sub.3 third nuclear quantum dot (CI1.sub.3) of the first quantum ALU (QUALU1); CI11.sub.1 first nuclear quantum dot (CI11.sub.1) of the quantum ALU (QUALU11) of the first column and first row; CI11.sub.2 second nuclear quantum dot (CI11.sub.2) of the quantum ALU (QUALU11) of the first column and first row; CI11.sub.3 third nuclear quantum dot (CI11.sub.3) of the quantum ALU (QUALU11) of the first column and first row; CI11.sub.4 fourth nuclear quantum dot (CI11.sub.4) of the quantum ALU (QUALU11) of the first column and first row; CI12.sub.1 first nuclear quantum dot (CI12.sub.1) of the quantum ALU (QUALU12) of the second column and first row; CI12.sub.2 second nuclear quantum dot (CI12.sub.2) of the quantum ALU (QUALU12) of the second column and first row; CI12.sub.3 third nuclear quantum dot (CI12.sub.3) of the quantum ALU (QUALU12) of the second column and first row; CI12.sub.4 fourth nuclear quantum dot (CI12.sub.4) of the quantum ALU (QUALU12) of the second column and first row; CI13.sub.1 first nuclear quantum dot (CI13.sub.1) of the quantum ALU (QUALU13)of the third column and first row; CI13.sub.2 second nuclear quantum dot (CI13.sub.2) of the quantum ALU (QUALU13) of the third column and first row; CI13.sub.3 third nuclear quantum dot (CI13.sub.3) of the quantum ALU (QUALU13) of the third column and first row; CI13.sub.4 fourth nuclear quantum dot (CI13.sub.4) of the quantum ALU (QUALU13) of the third column and first row; CI14.sub.1 first nuclear quantum dot (CI14.sub.1) of the quantum ALU (QUALU14) of the fourth column and first row; CI14.sub.2 second nuclear quantum dot (CI14.sub.2) of the quantum ALU (QUALU14) of the fourth column and first row; CI14.sub.3 third nuclear quantum dot (CI14.sub.3) of the quantum ALU (QUALU14) of the fourth column and first row; CI14.sub.4 fourth nuclear quantum dot (CI14.sub.4) of the quantum ALU (QUALU14) of the fourth column and first row; CI2 second nuclear quantum dot; CI2.sub.1 first nuclear quantum dot (CI2.sub.1) of the second quantum ALU (QUALU2); CI2.sub.2 second nuclear quantum dot (CI2.sub.2) of the second quantum ALU (QUALU2); CI2.sub.3 third nuclear quantum dot (CI2.sub.3) of the second quantum ALU (QUALU2); CI21.sub.1 first nuclear quantum dot (CI21.sub.1) of the quantum ALU (QUALU11) of the first column and second row; CI21.sub.2 second nuclear quantum dot (CI21.sub.2) of the quantum ALU (QUALU11) of the first column and second row; CI21.sub.3 third nuclear quantum dot (CI21.sub.3) of the quantum ALU (QUALU11) of the first column and second row; CI21.sub.4 fourth nuclear quantum dot (CI21.sub.4) of the quantum ALU (QUALU11) of the first column and second row; CI22.sub.1 first nuclear quantum dot (CI22.sub.1) of the quantum ALU (QUALU12) of the second column and second row; CI22.sub.2 second nuclear quantum dot (CI22.sub.2) of the quantum ALU (QUALU12) of the second column and second row; CI22.sub.3 third nuclear quantum dot (CI22.sub.3) of the quantum ALU (QUALU12) of the second column and second row; CI22.sub.4 fourth nuclear quantum dot (CI22.sub.4) of the quantum ALU (QUALU12) of the second column and second row; CI23.sub.1 first nuclear quantum dot (CI23.sub.1) of the quantum ALU (QUALU13) of the third column and second row; CI23.sub.2 second nuclear quantum dot (CI23.sub.2) of the quantum ALU (QUALU13) of the third column and second row; CI23.sub.3 third nuclear quantum dot (CI23.sub.3) of the quantum ALU (QUALU13) of the third column and second row; CI23.sub.4 fourth nuclear quantum dot (CI23.sub.4) of the quantum ALU (QUALU13) of the third column and second row; CI24.sub.1 first nuclear quantum dot (CI24.sub.1) of the quantum ALU (QUALU14) of the fourth column and second row; CI24.sub.2 second nuclear quantum dot (CI24.sub.2) of the quantum ALU (QUALU14) of the fourth column and second row; CI24.sub.3 third nuclear quantum dot (CI24.sub.3) of the quantum ALU (QUALU14) of the fourth column and second row; CI24.sub.4 fourth nuclear quantum dot (CI24.sub.4) of the quantum ALU (QUALU14) of the fourth column and second row; CI3 third nuclear quantum dot; CI31.sub.1 first nuclear quantum dot (CI31.sub.1) of the quantum ALU (QUALU11) of the first column and third row; CI31.sub.2 second nuclear quantum dot (CI31.sub.2) of the quantum ALU (QUALU11) of the first column and third row; CI31.sub.3 third nuclear quantum dot (CI31.sub.3) of the quantum ALU (QUALU11) of the first column and third row; CI31.sub.4 fourth nuclear quantum dot (CI31.sub.4) of the quantum ALU (QUALU11) of the first column and third row; CI32.sub.1 first nuclear quantum dot (CI32.sub.1) of the quantum ALU (QUALU12) of the second column and third row; CI32.sub.2 second nuclear quantum dot (CI32.sub.2) of the quantum ALU (QUALU12) of the second column and third row; CI32.sub.3 third nuclear quantum dot (CI32.sub.3) of the quantum ALU (QUALU12) of the second column and third row; CI32.sub.4 fourth nuclear quantum dot (CI32.sub.4) of the quantum ALU (QUALU12) of the second column and third row; CI33.sub.1 first nuclear quantum dot (CI33.sub.1) of the quantum ALU (QUALU13) of the third column and third row; CI33.sub.2 second nuclear quantum dot (CI33.sub.2) of the quantum ALU (QUALU13) of the third column and third row; CI33.sub.3 third nuclear quantum dot (CI33.sub.3) of the quantum ALU (QUALU13) of the third column and third row; CI33.sub.4 fourth nuclear quantum dot (CI33.sub.4) of the quantum ALU (QUALU13) of the third column and third row; CI34.sub.1 first nuclear quantum dot (CI34.sub.1) of the quantum ALU (QUALU14) of the fourth column and third row; CI34.sub.2 second nuclear quantum dot (CI34.sub.2) of the quantum ALU (QUALU14) of the fourth column and third row; CI34.sub.3 third nuclear quantum dot (CI34.sub.3) of the quantum ALU (QUALU14) of the fourth column and third row; CI34.sub.4 fourth nuclear quantum dot (CI34.sub.4) of the quantum ALU (QUALU14) of the fourth column and third row; D Substrate. The substrate can preferably be a wide band gap material. Very preferably, diamond is used. However, it is also suggested here to try other wide-band-gap materials, such as BN, GaN, etc. Also, the use of other materials made of elements of the IV. Main Group of the Periodic Table and their mixed crystals is conceivable. The use of insulators with high charge carrier mobility is also conceivable. In this case, attention must be paid to the isotopic composition, since the material must not have any magnetic nucleus momentum μ. Preferably, the substrate may be diamond, which is preferably isotopically pure. It is particularly preferred to use isotopically pure diamond comprising essentially .sup.12C.sup.isotopes. Preferably, the diamond contains preferably no ferromagnetic impurities such as Fe and/or Ni. Preferably, the substrate (D) and/or the epitaxial layer (DEPI) are diamond. Preferably, the substrate (D) and/or the epitaxial layer (DEPI) are of the same material. If silicon is used as the substrate material, the material of the substrate essentially preferably comprises .sup.28Si isotopes and/or .sup.30Si isotopes because they do not have nuclear spin. If silicon carbide is used as substrate material, the material of the substrate essentially preferably comprises .sup.28Si isotopes and/or .sup.30Si isotopes and .sup.12C isotopes and/or .sup.14C isotopes, as these do not exhibit nuclear spin; d1 distance of the quantum dot (NV) of the quantum bit (QUB) below the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), which may be present, the first distance being measured along the plumb line (LOT) from the quantum dot (NV) of the quantum bit (QUB) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), which may be present, and/or first distance of the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG) below the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present, is measured, and/or epitaxial layer (DEPI) present, wherein the first distance along the plumb line (LOT) from the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present, is measured; d2 second distance of the second quantum dot (NV2) of the second quantum bit (QUB2) of the quantum register (QUREG) below the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if any epitaxial layer (DEPI) present, wherein the first distance along the plumb line (LOT) from the second quantum dot (NV2) of the second quantum bit (QUB1) of the quantum register (QUREG) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present, is measured; DEPI epitaxial layer deposited on the substrate (D). The epitaxial layer is preferably deposited by CVD process on one of the oriented surface of a single crystal. Preferably, the epitaxial layer is isotopically pure. This allows long coherence times. Also, such a layer is preferably largely free of impurity atoms. The thickness of the layer is preferably chosen to minimize interaction between the crystal perturbations of the substrate(D), for example in the form of isotopic deviations (e.g., in the form of .sup.13C isotopes in the case of diamond as substrate) or impurity atoms (e.g., Fe or Ni atoms). In the case of NV centers in diamond, inexpensive diamonds grown in molten metals can then be used as substrate (D), even though they contain large amounts of iron atoms (Fe atoms). Provided the quality of the substrate (D) is sufficient, the epitaxial layer can be dispensed with. For this reason, this epitaxial layer (DEPI) is not shown in all figures. Preferably, at least in the region of the quantum dots (NV) or in the region of the nuclear quantum dots (CI), the epitaxial layer comprises essentially no isotopes with nucleus magnetic moment. In the case of diamond as an epitaxial layer, the epitaxial layer preferably comprises essentially .sup.12C isotopes and .sup.14C isotopes. In the case of diamond as an epitaxial layer, the epitaxial layer even more preferably comprises essentially only .sup.12C isotopes. In the case of silicon as an epitaxial layer, the epitaxial layer preferably comprises essentially .sup.28Si isotopes and .sup.30Si isotopes. In the case of silicon as an epitaxial layer, the epitaxial layer even more preferably comprises essentially only .sup.28Si isotopes. In the case of silicon carbide as an epitaxial layer, the epitaxial layer preferably comprises essentially .sup.28Si isotopes and .sup.30Si isotopes or .sup.12C isotopes and .sup.14C isotopes. In the case of silicon as the epitaxial layer, the epitaxial layer even more preferably comprises essentially only .sup.28Si isotopes or .sup.12C isotopes. DOT Range of contact doping of the substrate (D) or epitaxial layer (DEPI); DR Drain. The drain in FIG. 37 corresponds to contact KV12 in FIG. 19. f.sub.MW common electron-electron microwave frequency (f.sub.MW); f.sub.MW1 first electron1-electron1 microwave resonance frequency (f.sub.MW1); nucleusf.sub.MWCF1 first nucleus-electron microwave resonance frequency; f.sub.MWCE2 second nucleus-electron microwave resonance frequency; f.sub.MWCE1, 1 first nucleus-electron microwave resonance frequency for the first quantum ALU (QUALU1) to drive the first nuclear quantum dot (CI21) of the first quantum ALU (QUALU1); f.sub.MWCE2, 1 second nucleus-electron microwave resonance frequency for the first quantum ALU (QUALU1) to drive the second nuclear quantum dot (CI22) of the first quantum ALU (QUALU1); f.sub.MWCE3, 1 third nucleus-electron microwave resonance frequency for the first quantum ALU (QUALU1) to drive the third nuclear quantum dot (CI23) of the first quantum ALU (QUALU1); f.sub.MWCE1, 2 first nucleus-electron microwave resonance frequency for the second quantum ALU (QUALU2) to drive the first nuclear quantum dot (CI21) of the second quantum ALU (QUALU2); f.sub.MWCE2, 2 second nucleus-electron microwave resonance frequency for the second quantum ALU (QUALU2) to drive the second nuclear quantum dot (CI22) of the second quantum ALU (QUALU2); f.sub.MWCE3, 2 third nucleus-electron microwave resonance frequency for the second quantum ALU (QUALU2) to drive the third nuclear quantum dot (CI23) of the second quantum ALU (QUALU2); f.sub.MW2 second electron1-electron1 microwave resonance frequency (f.sub.MW2); f.sub.MWH horizontal electron-electron microwave frequency. The vertical electron- electron microwave frequency (f.sub.MWV) and the horizontal electron- electron microwave frequency (f.sub.MWH) are typically equal to each other and thus typically equal to a common electron-electron microwave frequency (f.sub.MW); f.sub.MWH1 first horizontal electron-electron microwave frequency. The first vertical electron-electron microwave frequency (f.sub.MWV1) and the first horizontal electron-electron microwave frequency (f.sub.MWH1) are typically equal to each other and thus typically equal to a common first electron-electron microwave frequency (f.sub.MW1); f.sub.MWHE1, 1 first horizontal electron1-electron2 microwave resonance frequency; f.sub.MWHE1, 2 second horizontal electron1-electron2 microwave resonance frequency; f.sub.MWV vertical electron-electron microwave frequency. The vertical electron- electron microwave frequency (f.sub.MWV) and the horizontal electron- electron microwave frequency (f.sub.MWH) are typically equal to each other and thus typically equal to a common electron-electron microwave frequency (f.sub.MW); f.sub.MWV1 first vertical electron-electron microwave frequency. The first vertical microwave frequency (f.sub.MWV1) and the first horizontal electron- electron microwave frequency (f.sub.MWH1) are typically equal to each other and thus typically equal to a common first electron-electron microwave frequency (f.sub.MW1); f.sub.MWVEE1 first vertical electron1-electron2 microwave resonance frequency; f.sub.RWCC nucleus-to-nucleus radio wave frequency. The horizontal nucleus-to- nucleus radio wave frequency (f.sub.RWHCC) and the vertical nucleus-to- nucleus radio wave frequency (f.sub.RWVCC) are typically equal to each other and equal to a common nucleus-to-nucleus radio wave frequency (f.sub.RWCC); f.sub.RWHCC horizontal nucleus -to- nucleus radio wave frequency. The horizontal nucleus-to-nucleus radio wave frequency (f.sub.RWHCC) and the vertical nucleus-to-nucleus radio wave frequency (f.sub.RWVCC) are typically equal to each other and equal to a common nucleus-to-nucleus radio wave frequency (f.sub.RWCC); f.sub.RWVCC vertical nucleus-to-nucleus radio wave frequency. The horizontal nucleus-to-nucleus radio wave frequency (f.sub.RWHCC) and the vertical nucleus-to-nucleus radio wave frequency (f.sub.RWVCC) are typically equal to each other and equal to a common nucleus-to-nucleus radio wave frequency (f.sub.RWCC); f.sub.RWEC1, 1 first electron-nucleus radio wave resonance frequency for the first quantum ALU (QUALU1) to drive the first nuclear quantum dot (CI11) of the first quantum ALU (QUALU1); f.sub.RWEC2, 1 second electron-nucleus radio wave resonance frequency for the first quantum ALU (QUALU1) to drive the second nuclear quantum dot (CI12) of the first quantum ALU (QUALU1); f.sub.RWEC3, 1 third electron-nucleus radio wave resonance frequency for the first quantum ALU (QUALU1) to drive the third nuclear quantum dot (CI13) of the first quantum ALU (QUALU1); f.sub.RWEC1, 2 first electron-nucleus radio wave resonance frequency for the second quantum ALU (QUALU2) to drive the first nuclear quantum dot (CI21) of the second quantum ALU (QUALU2); f.sub.RWEC2, 2 second electron nucleus- radio wave resonance frequency for the second quantum ALU (QUALU2) to drive the second nuclear quantum dot (CI22) of the second quantum ALU (QUALU2); f.sub.RWEC3, 2 third electron nucleus radio wave resonance frequency for the second quantum ALU (QUALU2) to drive the third nuclear quantum dot (CI23) of the second quantum ALU (QUALU2); GOX region of the gate oxide window in which the further insulation (IS2) is preferably reduced to a minimum level. HD horizontal driver stage (HD) for controlling the quantum bit (QUB) to be driven; HD1 first horizontal driver stage (HD1) for controlling the first quantum bit (QUB1) to be driven; HD2 second horizontal driver stage (HD2) for controlling the second quantum bit (QUB2) to be driven; HD3 third horizontal driver stage (HD3) for controlling the third quantum bit (QUB3) to be driven; HLOT1 first further horizontal perpendicular line (HLOT1) parallel to the first perpendicular line (LOT) from the location of a first virtual horizontal quantum dot (VHNV1) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present; HLOT2 second further horizontal perpendicular line (HLOT2) parallel to the second perpendicular line (LOT) from the location of a second virtual horizontal quantum dot (VHNV2) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present; HS1 first horizontal receiver stage (HS1). which can form a unit with the first horizontal driver stage (HD1), for controlling the first quantum bit (QUB1) to be driven; HS2 second horizontal receiver stage (HS2), which can form a unit with the second horizontal driver stage (HD2), for controlling the second quantum bit (QUB3) to be driven; HS3 third horizontal receiver stage (HS3), which can form a unit with the third horizontal driver stage (HD3), for controlling the third quantum bit (QUB3) to be driven; IH horizontal current. The horizontal current is the electric current flowing through the horizontal line (LH). IH1 first horizontal current. The first horizontal current is the electric current flowing through the first horizontal line (LH1). IH2 second horizontal current. The second horizontal current is the electric current flowing through the second horizontal line (LH2). IH3 third horizontal current. The third horizontal current is the electric current flowing through the third horizontal line (LH3). IH4 fourth horizontal current. The fourth horizontal current is the electric current flowing through the fourth horizontal line (LH4). IHG1 first horizontal DC component; IHG2 second horizontal DC component; IHi i-th horizontal current. The i-th horizontal current is the electric current flowing through the i-th horizontal line (LHi). IHm m-th horizontal current. The m-th horizontal current is the electric current flowing through the m-th horizontal line (LHm). IHM1 first horizontal microwave current with which the first horizontal line (LH1) is energized; IHM2 second horizontal microwave current with which the second horizontal line (LH2) is energized; IHQUREG inhomogeneous quantum register; Iph photo current; IS insulation. The preferred insulation has the task of electrically insulating the horizontal line (LH) from the vertical line (LV). Preferably, it is an oxide, for example SiO.sub.2, which is preferably sputtered on. Preferably, the insulation comprises essentially isotopes with no nucleus magnetic moment. Preferably, .sup.28Si.sup.16O.sub.2. Reference is made here to the discussion of the term “essentially”. Preferably, the further isolation comprises essentially only one isotope type per element of isotopes without nuclear magnetic moment; IS2 further insulation. The preferred further insulation has the task of electrically insulating the horizontal line (LH) or the vertical line (LV) from the substrate (D) or the epitaxial layer (DEPI). Preferably, this is an oxide, for example SiO.sub.2, which is preferably sputtered on. Preferably, the further isolation comprises essentially isotopes without nucleus magnetic moment. Preferably, .sup.28Si.sup.16O.sub.2. Reference is made here to the discussion of the term “essentially”. Preferably, the further isolation comprises essentially only one isotope type per element of isotopes without nucleus magnetic moment; ISH1 first horizontal shielding current flowing through the first horizontal shielding line (SH1); ISH2 second horizontal shield current flowing through the second horizontal shield line (SH2); ISH3 third horizontal shield current flowing through the third horizontal shield line (SH3); ISH4 fourth horizontal shield current flowing through the fourth horizontal shield line (SH3); ISV1 first vertical shielding current flowing through the first vertical shielding line (SV1); ISV2 second vertical shield current flowing through the second vertical shield line (SV2); ISV3 third vertical shield current flowing through the third vertical shield line (SV3); ISV4 fourth vertical shield current flowing through the fourth vertical shield line (SV4); IV vertical current. The vertical current is the electric current flowing through the vertical line (LV); IV1 first vertical current. The first vertical current is the electric current flowing through the first vertical line (LV1); IV2 second vertical current The second vertical current is the electric current flowing through the second vertical line (LV2); IV3 third vertical current. The third vertical current is the electric current flowing through the third vertical line (LV3); IV4 fourth vertical current. The fourth vertical current is the electric current flowing through the fourth vertical line (LV4); IVG1 first vertical direct current; IVG2 second vertical DC; IVj j-th vertical current. The j-th vertical current is the electric current flowing through the j-th vertical line (LVj); IVM1 first vertical microwave current with which the first vertical line (LV1) is energized; IVM2 second vertical microwave current with which the second vertical line (LV2) is energized; IVn n-th vertical current. The n-th vertical current is the electric current flowing through the n-th vertical line (LVn); ITO indium tin oxide. This is an exemplary material for manufacturing the horizontal line (LH) and/or the vertical line (LV) and/or the shielding lines; KH11 first horizontal contact of the first quantum bit (QUB1). The first horizontal contact of the first quantum bit (QUB1) electrically connects the first horizontal shield line (SH1) in the first quantum bit (QUB1) to the substrate (D) or epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KH12 first horizontal contact of the second quantum bit (QUB2). The first horizontal contact of the second quantum bit (QUB2) electrically connects the first horizontal shield line (SH1) in the second quantum bit (QUB2) to the substrate (D) or epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KH22 second horizontal contact of the first quantum bit (QUB1) and first horizontal contact of the second quantum bit (QUB2). The first quantum bit (QUB1) and the second quantum bit (QUB2) share this contact in the example of FIG. 23. The contact electrically connects the second horizontal shield line (SH2) in the first quantum bit (QUB1) and the second quantum bit (QUB2), respectively, to the substrate (D) and an epitaxial layer (DEPI), respectively. Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KH33 second horizontal contact of the second quantum bit (QUB2) and first horizontal contact of the third quantum bit (QUB3). The second quantum bit (QUB2) and the third quantum bit (QUB3) share this contact in the example of FIG. 23. The contact electrically connects the third horizontal shield line (SH3) in the second quantum bit (QUB2) or third quantum bit (QUB3) to the substrate (D) or an epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KH44 second horizontal contact of the third quantum bit (QUB3). The second horizontal contact of the third quantum bit (QUB3) electrically connects the fourth horizontal shield line (SH4) in the third quantum bit (QUB3) to the substrate (D) or an epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KTH cathode contact; KV11 first vertical contact of the first quantum bit (QUB1). The first vertical contact of the first quantum bit (QUB1) electrically connects the first vertical shield line (SV1) in the first quantum bit (QUB1) to the substrate (D) or epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KV12 second vertical contact of the first quantum bit (QUB1) and second quantum bit (QUB2). The first quantum bit (QUB1) and the second quantum bit (QUB2) preferentially share the second vertical contact. The second vertical contact of the first quantum bit (QUB1) and second quantum bit (QUB2) preferably electrically connects the second vertical shield line (SH2) preferably on the boundary between the first quantum bit (QUB1) and second quantum bit (QUB2) to the substrate (D) or epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact is one comprising or made of titanium; KV13 third vertical contact of the second quantum bit (QUB2) and third quantum bit (QUB3). The second quantum bit (QUB2) and the third quantum bit (QUB3) preferentially share the third vertical contact. The third vertical contact of the second quantum bit (QUB2) and the third quantum bit (QUB3) preferably electrically connects the third vertical shield line (SH3) preferably on the boundary between the second quantum bit (QUB2) and the third quantum bit (QUB3) to the substrate (D) and the epitaxial layer (DEPI), respectively. Preferably, in the case of diamond as substrate material, the contact is one comprising or made of titanium; KV21 first vertical contact of the second quantum bit (QUB2). The first vertical contact of the second quantum bit (QUB2) electrically connects the first vertical shield line (SV1) in the second quantum bit (QUB2) to the substrate (D) or an epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KV31 first vertical contact of the third quantum bit (QUB3). The first vertical contact of the third quantum bit (QUB3) electrically connects the first vertical shield line (SV1) in the third quantum bit (QUB13) to the substrate (D) or an epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KV22 second vertical contact of the second quantum bit (QUB2). The second vertical contact of the second quantum bit (QUB2) electrically connects the second vertical shield line (SV2) in the second quantum bit (QUB2) to the substrate (D) or an epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; KV32 second vertical contact of the third quantum bit (QUB3). The second vertical contact of the third quantum bit (QUB3) electrically connects the second vertical shield line (SV2) in the third quantum bit (QUB3) to the substrate (D) or an epitaxial layer (DEPI). Preferably, in the case of diamond as substrate material, the contact comprises or is made of titanium; L1 first blocking inductance. The first blocking inductance is used to feed a DC voltage in to the horizontal or vertical line concerned. L2 second blocking inductance. The second blocking inductance is used to feed the relevant radio frequency signal in to the relevant horizontal or vertical line. LB green light. The green light is used in this writing to initialize the quantum dots (NV). It is pump radiation for the paramagnetic centers which form the quantum dots (NV). Reference is made to the explanations in the glossary. LED light source. The light source is preferentially used to generate the “green light” as defined in this paper. Note that only when NV centers in diamond are used as quantum dots (NV) in the substrate (D) does the “green light” actually preferentially have a color that appears green to humans. This may be considerably different for other impurity sites in other substrate crystals. Reference is made to a design possibility corresponding to FIG. 29. Therefore, this is a functional definition. Preferably, an LED or a laser or a laser LED or the like is used. Typically, relatively high illuminance levels are used. Therefore, the light source may also include optical functional elements such as filters, lenses, mirrors, apertures, photonic crystals, etc. for beam shaping and steering and filtering. LEDDR Light Source Driver; LH horizontal line; LH1 first horizontal line; LH2 second horizontal line; LH3 third horizontal line; LH4 fourth horizontal line; LH5 fifth horizontal line; LH6 sixth horizontal line; LH7 seventh horizontal line; LH8 eighth horizontal line; LH9 ninth horizontal line; LH10 tenth horizontal line; LH11 eleventh horizontal line; LH12 twelfth horizontal line; LH13 thirteenth horizontal line; LH14 fourteenth horizontal line; LH15 fifteenth horizontal line; LH16 sixteenth horizontal line; LH17 seventeenth horizontal line; LHi i-th horizontal line; LHj j-th horizontal line; LHm m-th horizontal line; LHn n-th horizontal line; LOT perpendicular line (LOT) of the solder from the location of the quantum dot (NV) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present. It is an imaginary line; LOTP perpendicular point where the perpendicular line (LOT), which is an imaginary line, pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present. It is therefore an imaginary point; LV vertical line; LV1 first vertical line; LV2 second vertical line; LV3 third vertical line; LV4 fourth vertical line; LVj j-th vertical line; LVn n-th vertical line; PC control device; MFC magnetic field control; MFK magnetic field control device (actuator); MFS magnetic field sensor; MOD module for controlling the horizontal lines and the vertical lines. The module is controlled by the control device (μC) via a control bus (CB). The module provides the DC voltage for and, if necessary, the DC current for adjusting or detuning the resonance frequencies of the respective quantum dots or the respective nuclear quantum dots, or the pairs of quantum dots or the pairs of nuclear quantum dot and quantum dot. Further, the module provides the radio frequency and microwave frequency signals for controlling the same. Preferably, the output of the module has the same characteristic impedance as the relevant line being driven. If tri-plate lines are used, the module preferably provides all three lines. The module preferably includes the driver stage (HD1, HD2, HD3, VD1). If necessary, the control unit (CBA, CBB) can be fully or partially part of the module. MOS MOS transistor; NV quantum dot. The quantum dot is preferably a paramagnetic center. Typically, the paramagnetic center is an impurity center in the substrate (D) and/or in the epitaxial layer (DEPI). If the paramagnetic center is in the substrate (D) and/or in the epitaxial layer (DEPI), the paramagnetic center is preferably one of the known paramagnetic centers in diamond. For this, reference is made to the book Alexander Zaitsev, “Optical Properties of Diamond”, Springer; Edition: 2001 (Jun. 20, 2001). NV1 first quantum dot of the first quantum bit (QUB1); NV2 second quantum dot of the second quantum bit (QUB2); NV3 third quantum dot of the third quantum bit (QUB3); NV4 fourth quantum dot of the fourth quantum bit (QUB4); NV5 fifth quantum dot of the fifth quantum bit (QUB5); NV6 sixth quantum dot of the sixth quantum bit (QUB6); NV7 seventh quantum dot of the seventh quantum bit (QUB7); NV8 eighth quantum dot of the eighth quantum bit (QUB8); NV9 ninth quantum dot of the ninth quantum bit (QUB9); NV10 tenth quantum dot of the tenth quantum bit (QUB10); NV11 quantum dot of the quantum bit (QUB11) in the first vertical column and in the first horizontal row of a one-dimensional quantum register (QREG1D) or a two-dimensional quantum register (QREG2D). In FIG. 35, this reference sign exceptionally has the meaning of the eleventh quantum dot of the eleventh quantum bit. (QUB11); NV12 twelfth quantum dot of the twelfth quantum bit (QUB12); NV13 thirteenth quantum dot of the thirteenth quantum bit (QUB13); NV14 fourteenth quantum dot of the fourteenth quantum bit (QUB14); NV15 fifteenth quantum dot of the fifteenth quantum bit (QUB15); NV16 sixteenth quantum dot of the sixteenth quantum bit (QUB16); NV17 seventeenth quantum dot of the seventeenth quantum bit (QUB17); OF surface of the substrate (D) or epitaxial layer (DEPI). For purposes of this disclosure, the surface is formed by the surface of the stack of epitaxial layer (DEPI) and substrate (D). If no epitaxial layer is present, the surface is formed by the surface of the substrate (D) alone within the meaning of this disclosure. φ1 first phase angle of the Rabi oscillation of the first quantum dot (NV1) of the first quantum bit (QUB1) of the quantum register (QUREG); φ2 second phase angle of the Rabi oscillation of the second quantum dot (NV2) of the second quantum bit (QUB2) of the quantum register (QUREG); QC quantum computer; QUALU quantum ALU. For the purposes of this paper, a quantum ALU consists of at least one quantum dot (NV), preferably exactly one quantum dot (NV), and at least one nuclear quantum dot (CI), preferably multiple nuclear quantum dots; QUALU1 first quantum ALU. The exemplary first quantum ALU consists of a first quantum dot (NV1) and a first nuclear quantum dot (CI1); QUALU1′ first quantum ALU. The exemplary first quantum ALU consists of a first quantum dot (NV1) and a first nuclear quantum dot (CI1.sub.1) of the first quantum ALU and a second nuclear quantum dot (CI1.sub.2) of the first quantum ALU and a third nuclear quantum dot (CI1.sub.3) of the first quantum ALU (FIG. 20); QUALU11 quantum ALU in the first row and first column; QUALU12 quantum ALU in the first row and second column; QUALU13 quantum ALU in the first row and third column; QUALU21 quantum ALU in the second row and first column; QUALU22 quantum ALU in the second row and second column; QUALU23 quantum ALU in the second row and third column; QUALU31 quantum ALU in the third row and first column; QUALU32 quantum ALU in the third row and second column; QUALU33 quantum ALU in the third row and third column; QUALU2 second quantum ALU. The exemplary second quantum ALU consists of a second quantum dot (NV2) and a second nuclear quantum dot (CI2); QUALU2′ second quantum ALU. The exemplary second quantum ALU consists of a second quantum dot (NV2) and a first nuclear quantum dot (CI2.sub.1) of the second quantum ALU and a second nuclear quantum dot (CI2.sub.2) of the second quantum ALU and a third nuclear quantum dot (CI2.sub.3) of the second quantum ALU (FIG. 20); QUREG quantum register; QUREG1D one dimensional quantum register; QUREG2D two-dimensional quantum register; QUB quantum bit; QUB1 first quantum bit of the quantum register (QUREG); QUB2 second quantum bit of the quantum register (QUREG); QUB3 third quantum bit of the quantum register (QUREG); QUB4 fourth quantum bit of the quantum register (QUREG); QUB5 fifth quantum bit of the quantum register (QUREG); QUB6 sixth quantum bit of the quantum register (QUREG); QUB7 seventh quantum bit of the quantum register (QUREG); QUB8 eighth quantum bit of the quantum register (QUREG); QUB9 ninth quantum bit of the quantum register (QUREG); QUB10 tenth quantum bit of the quantum register (QUREG); QUB11 eleventh quantum bit of the quantum register (QUREG); QUB12 twelfth quantum bit of the quantum register (QUREG); QUB13 thirteenth quantum bit of the quantum register (QUREG); QUB14 fourteenth quantum bit of the quantum register (QUREG); QUB15 fifteenth quantum bit of the quantum register (QUREG); QUB16 sixteenth quantum bit of the quantum register (QUREG); QUB17 seventeenth quantum bit of the quantum register (QUREG); QUBi i-th quantum bit of the quantum register (QUREG); QUBj j-th quantum bit of the quantum register (QUREG); QUBn n-th quantum bit of the quantum register (QUREG); SH1 first horizontal shield line; SH2 second horizontal shield line; SH3 third horizontal shield line; SH4 fourth horizontal shield line; SH5 fifth horizontal shield line; SH6 sixth horizontal shield line; SH7 seventh horizontal shield line; SH8 eighth horizontal shield line; SH9 ninth horizontal shield line; SHi i-th horizontal shield line SHm m-th horizontal shield line; SO source. The source in FIG. 37 corresponds to contact KV11 in FIG. 19. sp12 distance between the first quantum dot (NV1) of the first quantum bit (QUB1) and the second quantum dot (NV2) of the second quantum bit (QUB2) of the exemplary quantum register (QUREG); SV1 first vertical shield line; SV2 second vertical shield line; SV3 third vertical shield line; SV4 fourth vertical shield line; SVj j-th vertical shield line; SVn n-th vertical shield line; SW1 first threshold; VD vertical driver stage for controlling tire quantum bit (QUB) to be driven; first VD1 vertical driver stage for controlling the first quantum bit (QUB1) to be driven; VD2 second vertical driver stage for controlling the second quantum bit (QUB2) to be driven; VD3 third vertical driver stage for controlling the third quantum bit (QUB3) to be driven; V.sub.DC DC voltage source of the relevant line. This DC voltage source is used to adjust or detune the resonance frequencies of the quantum dots or nuclear quantum dots of the quantum bits or nuclear quantum bits of which the powered relevant line is a part. V.sub.ext extraction voltage or extraction voltage source that supplies the extraction voltage. The extraction voltage is needed to extract the photo-charge carriers of the quantum dots in case of electrical readout. In the example of FIG. 36, the extraction voltage source is controlled by the control device (μC). VHNV1 first virtual horizontal quantum dot; VHNV2 second virtual horizontal quantum dot; VLOT1 first further vertical plumb line parallel to the plumb line (LOT) from the location of a first virtual vertical nuclear quantum dot (VVCI1) and/or a first vertical quantum dot (VVNV1) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present; VLOT2 second further vertical perpendicular line parallel to the perpendicular line (LOT) from the location of a second virtual vertical nuclear quantum dot (VVCI2) and/or a second vertical quantum dot (VVNV2) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEPI), if present; VLOTP1 first further vertical perpendicular point; VLOTP2 second additional vertical perpendicular point; V.sub.MW microwave source. In the example of FIG. 36, the microwave source generates the microwave signal to drive the quantum dots, nuclear quantum dots and pairs of quantum dots and pairs of quantum dots on the one hand and nuclear quantum dots on the other hand. VS1 first vertical receiver stage, which can form a unit with the first vertical driver stage (VD1), for controlling the first quantum bit (QUB1) to be driven; VS2 second vertical receiver stage, which can form a unit with the second vertical driver stage (VD2), for controlling the second quantum bit (QUB2) to be driven; VS3 third vertical receiver stage, which can form a unit with the third vertical driver stage (VD3), for controlling the third quantum bit (QUB3) to be driven; VVNV1 first virtual vertical quantum dot; VVNV2 second virtual vertical quantum dot;

LIST OF CITED DOCUMENTS

Patent Literature

[0899] DE A14322830 [0900] EN 4 322 830 A1

Non-Patent Literature

[0901] Alexander Zaitsev, “Optical Properties of Diamond,” Springer; Edition: 2001 (Jun. 20, 2001). [0902] Mathias H. Metsch, Katharina Senkalla, Benedikt Tratzmiller, Jochen Scheuer, Michael Kern, Jocelyn Achard, Alexandre Tallaire, Martin B. Plenio, Petr Siyushev, and Fedor Jelezko. “Initialization and Readout of Nuclear spins via a Negatively Charged Silicon-Vacancy Center in Diamond” Phys. Rev. Lett. 122, 190503—Published 17 May 2019 [0903] Unden T. Tomek N, Weggler T, Frank F. London P. Zopes J, Degen C, Raatz N. Meijer J. Watanabe H. Itoh K M. Plenio M B. Naydenov B & Jelezko F. “Coherent control of solid-state nuclear spin nano-ensemble”, npj Quantum Information 4, Article number: 39 (2018) [0904] Häuβler S. Thiering G. Dietrich A, Wasson N, Teraji T, soya J. Iwasaki T, Hatano M. Jelezko F. Gali A. Kubanek A. “Photoluminescence excitation spectroscopy of SiV- and GeV-color center in diamond”, New Journal of Physics. Volume 19 (2017) [0905] Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, Jaroslav Hruby, Takashi Yamamoto. Michael Trupke, Tokuyuki Teraji, Junichi soya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond”. Science 363, 728-731 (2019) 15 Feb. 2019 [0906] Matthias Pfender, Nabeel Aslam, Patrick Simon, Denis Antonov, Gergö Thiering, Sins Burk, Felipe F{dot over (a)}varo de Oliveira. Andrej Denisenko, Helmut Fedder, Jan Meijer, Jose A. Garrido, Adam Gall, Tokuyuki Teraji, Junichi (soya, Marcus William Doherty, Audrius Alkauskas, Alejandro Gallo. Andreas Grüneis, Philipp Neumann. and Jörg Wrachtrup, [0907] “Protecting a Diamond Quantum Memory by Charge State Control”. DOI: 10.1021/acs.nanolett.7b01796, Nano Len. 2017, 17.5931-5937 [0908] Petr Siyushev, Milos Nesladek, Emilie Bourgeois. Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi (soya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond”. Science 15 Feb. 2019: Vol. 363. Issue 6428, pp. 728-731. DOI: 10.1126/science.aav2789 [0909] A. M. Tyryshkin, S. Tojo, J. J. L. Morton. H. Riemann, N. V. Abrosimov, P. Becker. H.-J. Pohl. Th. Schenkel, Mi. L. W. Thewalt, K. M. Itoh, S. A. Lyon, “Electron spin coherence exceeding seconds in high-purity silicon” NatureMat. 11, 143 (2012) [0910] D. Riedel. F. Fuchs, H. Kraus, S. Vath, A. Sperlich, V. Dyakonov, A. A. Soltamova, P. G. Baranov, V. A. Ilyin, G. V. Astakhov, “Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide” arXiv:1210.0505v1 [coed-mat.mtrl-sci] 1 Oct. 2012 [0911] D. D. Berhanuddin, “Generation and characterisation of the carbon G-centre in silicon”. PhD-thesis URN: 1456601S, University of Surrey, March 2015 [0912] C. Beaufils. W. Redjem. E. Rousseau, V. Jacques, A. Yu. Kuznetsov, C. Raynaud, C. Voisin. A. Benali, T. Herzig, S. Pezzagna, J. Meijer. M. Abbarchi. and G. Cassabois, “Optical properties of an ensemble of G-centers in silicon”, Phys. Rev. B 97, 035303, Jan. 9, 2018 [0913] H. R. Vydyanath, J. S. Lorenzo, F. A. Kröger, “Defect pairing diffusion, and solubility studies in selenium-doped silicon”, Journal of Applied Physics 49.5928 (1978). HTTPS://DOI.ORG/10.1063/1.324560 [0914] Stefania Castelletto and Alberto Boretti, “Silicon carbide color centers for quantumapplications” 2020 J. Phys. Photonics2 022001. [0915] M. K. Bhaskar, D. D. Sukachev, A. Sipahigil, R. E. Evans, M. J. Burek. C. T. Nguyen, L. J. Rogers, P. Siyushev, M. H. Metsch, H. Park. F. Jelezko, M. Loncar, and M. D. Lukin “Quantum Nonlinear Optics with a Germanium-Vacancy Color Centerin a Nanoscale Diamond Waveguide”, Phys. Rev. Lett. 118 223603, DOI: 10.1103/PhysRevLett. 118.223603, arXiv:1612.03036 [quant-ph] [0916] D. D. Sukachev, A. Sipahigil. C. T. Nguyen, M. K. Bhaskar, R. E. Evans, F. Jelezko, M. D. Lukin “Silicon-vacancy spin qubit in diamond: a quantum memory exceeding 10 ms with single-shot state readout” 2017, Phys. Rev. Lett. 119 223602 [0917] Marina Radulaski, Matthias Widmann, Matthias Niethammer, Jingyuan Linda Zhang. Sang-Yun Lee. Torsten Rendler, Konstantinos G. Lagoudakis, Nguyen Tien Son, Erik Janzén, Takeshi Ohshima, Jörg Wrachtrup, Jelena Vučković, “Scalable Quantum Photonics with Single Color Centers in Silicon Carbide”, Nano Letters 17 (3), 1782-1786 (2017), DOI: 10.1021/acs.nanolett.6.b05102, arXiv:1612.02874 [0918] C. Wang, C. Kurtsiefer, H. Weinfurter, and B. Burchard, “Single photon emissionfrom SiV centres in diamond produced by ion implantation” J. Phys. B: At. Mol. Opt. Phys. 39(37). 2006 [0919] Björn Tegetmeyer, “Luminescence properties of SiV-centers in diamond diodes” PhD thesis, University of Freiburg. Jan. 30, 2018. [0920] Carlo Bradac. Weibo Gao. Jacopo Fomeris, Matt Trusheim. Igor Aharonovich. “Quantum Nanophotonics with Group IV defects in Diamond”, DOI: 10.1038/s41467-020-14316-x, arXiv:1906.10992 [0921] Rasmus Høy Jensen, Erika Janitz, Yannik Fontana, Yi He, Olivier Gobron, Ilya P. Radko, Mihir Bhaskar, Ruffin Evans. Cesar Daniel Rodriguez Rosenblueth. Lilian Childress, Alexander Huck, Ulrik Lund Andersen, “Cavity-Enhanced Photon Emission from a Single Germanium-Vacancy Center in a Diamond Membrane”, arXiv: 1912.05247v3 [quant-ph] 25 May 2020 [0922] Takayuki Iwasaki, Yoshiyuki Miyamoto, Takashi Taniguchi, Petr Siyushev, Mathias H. Metsch, Fedor Jelezko, Mutsuko Natant). “Tin-Vacancy Quantum Emitters in Diamond.” Phys. Rev. Lett. 119, 253601 (2017), DOI: 10.1103/PhysRevLett.119.253601, arXiv:1708.03576 [quart-ph]. [0923] Matthew E. Trusheim, Noel H. Wan. Kevin C. Chen. Christopher J. Ciccarino, Ravishankar Sundararaman, Girish Malladi, Eric Bersin. Michael Walsh. Benjamin Lienhard, Hassaram Bakhru, Prineha Narang, Dirk Englund. “Lead-Related Quantum Emitters in Diamond” Phys. Rev. B 99, 075430 (2019), DOI: 10.1103/PhysRevB.99.075430, arXiv:1805.12202 [quant-ph] [0924] M. Hollenbach, Y. Berencen, U. Kentsch. M. Helm. G. V. Astakhov “Engineering telecom single-photon emitters in silicon for scalable quantum photonics” Opt. Express 28, 26111 (2020), DOI: 10.1364/OE.397377, arXiv:2008.09425 [physics.app-ph] [0925] Castelletto and Alberto Boreal, “Silicon carbide color centers for quantum applications” 2020 J. Phys. Photonics2 022001. [0926] V. Ivády. J. Davidsson. N. T. Son. T. Ohshima, I. A. Abrikosov, A. Gali, “Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide”. Phys. Rev. B, 2017, 96.161114 [0927] J. Davidsson, V. Ivády, R. Armiento, N. T. Son, A. Gali, I. A. Abrikosov, “First principles predictions of magneto-optical data forsemiconductor point defect identification: the case of divacancy defects in 4H—SiC”, New J. Phys., 2018, 20, 023035 [0928] J. Davidsson. V. Ivády, R. Armiento, T. Ohshima, N. T. Son, A. Gali. I. A. Abrikosov “Identification of divacancy and silicon vacancy qubits in 6H—SiC”. Appl. Phys. Lett. 2019, 114, 112107 [0929] S. A. Zargaleh, S. Hameau, B. Eble, F. Margaillan, H. J. von Bardeleben, J. L. Cantin, W. Gao. “Nitrogen vacancy center in cubic silicon carbide: a promising qubit in the 1.5 μm spectral range for photonic quantum networks” Phys. Rev. B, 2018, 98, 165203 [0930] S. A. Zargaleh et al “Evidence for near-infrared photoluminescence of nitrogen vacancy centers in 4H—SiC” Phys. Rev. B, 2016, 94, 060102 [0931] Junfeng Wang, Xiaoming Zhang, Yu Zhou, Ke Li. Ziyu Wang, Phani Peddibhotla, Fucai Liu, Sven Bauerdick, Axel Rudzinski, Zheng Liu, Weibo Gao, “Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam” ACS Photonics, 2017, 4 (5), pp 1054-1059, DOI: 10.1021/acsphotonics.7b00230, arXiv:1703.04479 [quant-ph] [0932] Marcel Manheller, Stefan Trellenkamp, Rainer Waser, Silvia Karthäuser, “Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography”. Nanotechnology, Vol. 23. No. 12. March 2012, DOI: 10.1088/0957-4484/23/12/125302 [0933] J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup, “Generation of single-color centers by focused nitrogen implantation” Appl. Phys. Lett. 87, 261909 (2005); HTTPS://DOI.ORG/10.1063/1.2103389 [0934] Gurudev Dun. Liang Jiang, Jeronimo R. Maze, A. S. Zibrov “Quantum Register Based on Individual Electronic and Nuclear spin Qubits in Diamond”, Science, Vol. 316, 1312-1316. Jun. 1, 2007, DOI: 10.1126/science.1139831 [0935] Thiago P. Mayer Alegre, Antonio C. Torrezan de Souza. Gilberto Medeiros-Ribeiro, “Microstrip resonator for microwaves with controllable polarization,” arXiv:0708.0777v2 [cond-mat.othcr] Oct. 11, 2007. [0936] Benjamin Smeltzer, Jean McIntyre, Lilian Childress “Robust control of individual nuclear spins in diamond”, Phys. Rev. A 80, 050302(R)-25 Nov. 2009 [0937] Pew Siyushev, Milos Nesladek, Emilie Bourgeois. Michal Gulka, Jaroslav Hruby, Takashi Yamamoto, Michael Trupke, Tokuyuki Teraji, Junichi soya, Fedor Jelezko, “Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond” Science 15 Feb. 2019, Vol. 363, Issue 6428, pp. 728-731, DOI: 10.1126/science.aav2789 [0938] Timothy J. Proctor, Erika Andersson. Viv Kendon “Universal quantum computation by the unitary control of ancilla qubits and using a fixed ancilla-register interaction”, Phys. Rev. A 88, 042330-24 Oct. 2013. [0939] Charles George Tahan. “Silicon in the quantum limit: Quantum computing and decoherence in silicon architectures” PhD Thesis, University of Wisconsin-Madison, 2005 [0940] M. Abanto, L. Davidovich, Belita Koiller, R. L. de Matos Filho, “Quantum computation with doped silicon cavities.” arXiv:0811.3865v1 [cond-mat.mes-hall] 24 Nov. 2008. [0941] T. Schenkel, C. C. Lob. C. D. Weis, A. Schuh. A. Persaud. J. Bokor “Critical issues in the formation of quantum computer test structures by ion implantation”, NIM B, Proceedings of the 23rd International Conference on Atomic Collisions in Solids, ICACS-23, Phalaborwa, South Africa, Aug. 17-22, '08 [0942] G. D. Sanders, K. W. Kim, W. C. Holton, “A scalable solid-state quantum computer based on quantum dot pillar structures”, DOI: 10.1103/PhysRevB.61.7526 arXiv:cond-mat/0001124 [0943] Matias Urdampilkta, Anasua Chattetjee, Cheuk Chi Lo, Takashi Kobayashi, John Mansir, Sylvain Barraud, Andreas C. Betz. Sven Rogge, M. Fernando Gonzalez-Zalba, John J. L. Morton, “Charge dynamics and spin blockade in a hybrid double quantum dot in silicon”, arXiv: 1503.01049v2 [cord-mat.mes-hall] 19 Mar. 2015 [0944] Tobias Gras, Maciej Lewenstein, “Hybrid annealing using a quantum simulator coupled to a classical computer”, arXiv:1611.09729v1 [quant-ph] 29 Nov. 2016 [0945] T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage. M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K. Vandersypen, “A programmable two-qubit quantum processor in silicon”. arXiv:1708.04214v2 [cond-mat.mes-hall] 31 May 2018 [0946] C. H. Yang, R. C. C. Leon, J. C. C. Hwang. A. Saraiva. T. Tanttu, W. Huang, J. Camirand Lemyre, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, M. Pioro-Ladrière. A. Laucht, A. S. Dzurakl, “Silicon quantum processor unit cell operation above one Kelvin,” arXiv:1902.09126v2 [cond-mat.mes-hall] 19 Jun. 2019 [0947] A. J. Sigillito, M. J. Gullans, L. F. Edge. M. Borselli, and J. R. Petta, “Coherent transfer of quantum information in silicon using resonant SWAP gates”, arXiv:1906.04512v1 [coed-mat.mes-hall] 11 Jun. 2019 . . . [0948] A. A. Larionov, L. E. Fedichkin, A. A. Kokin, K. A. Valiev, “Nucleus magnetic resonance spectrum of 31P donors in silicon quantum computer”, arXiv:quant-ph/0012005v1 Dec. 1, 2000. [0949] J. L. O'Brien. S. R. Schofield, M. Y. Simmons, R. G. Clark. A. S. Dzurak, N. J. Curson, B. E. Kane. N. S. McAlpine. M. E. Hawley, G. W. Brown. “Towards the fabrication of phosphorus qubits for a silicon quantum computer”, Phys. Rev. B 64, 161401(R) (2001), DOI: 10.1103/PhysRevB.64.161401, arXiv:cond-mat/0104569 [0950] T. D. Ladd, J. R. Goldman. F. Yamaguchi. and Y. Yamamoto. “An all-silicon quantum computer,” Phys. Rev. Lett. 89, 017901 (2002), DOI: 10.1103/PhysRevLett.89.017901, arXiv:quant-ph/0109039. [0951] Belita Koiller, Xuedong Hu. S. Das Sarma, “Strain effects on silicon donor exchange: Quantum computer architecture Considerations”. Phys. Rev. B 66, 115201 (2002), DOI: 10.1103/PhysRevB.66.115201, arXiv:cond-mat/0112078 [cond-mat.mes-hall] [0952] T. Schenkel, J. Meijer, A. Persaud, J. W. McDonald. J. P. Holder, D. H. Schneider. “Single Ion Implantation for Solid State Quantum Computer Development” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing. Measurement. and Phenomena 20, 2819 (2002); https://doi.org/10.1116/1.1518016, [0953] Xuedong Hu, S. Das Sarma, “Gate errors in solid state quantum computer architectures”. Phys. Rev. A 66.012312 (2002), DOI: 10.1103/PhysRevA.66.012312, arXiv:cond-mat/0202152 [cond-mat.mes-hall], [0954] L. Oberbeck, N. J. Curson, M. Y. Simmons, R. Brenner, A. R. Hamilton, S. R. Schofield, R. G. Clark, “Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer”. Appl. Phys. Lett. 81, 3197 (2002): https://doi.org/10.1063/1.1516859 [0955] T. M. Buehler, R. P. McKinnon, N. E. Lumpkin, R. Brenner. Di. Reilly, L. D. Macke. A. R. Hamilton, A. S. Dzurak and R. G. Clark. “Self-aligned fabrication process for silicon quantum computer devices”, DOI: 10.1088/0957-4484/13/5/330, arXiv:cond-mat/0208374 [0956] L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton. D. J. Reilly, G. J. Milburn, R. G. Clark. “Charge-based quantum computing using single donors in semiconductors”, Phys. Rev. B 69, 113301, Mar. 11, 2004, DOI:https://doi.org/10.1103/PhysRevB.69.113301 [0957] A. S. Dzurak, L. C. L. Hollenberg, D. N. Jamieson, F. E. Stanley, C. Yang, T. M. BOhler. V. Chan, D. J. Reilly, C. Wellard, R. Hamilton, C. I. Pekes. A. G. Ferguson. E. Gauja, S. Primer, J. Milburn. R. G. Clark. “Charge-based silicon quantum computer architectures using controlled single-ion implantation” arXiv:cond-mat/0306265 [0958] S.-J. Park. A. Persaud, J. A. Liddle, J. Nilsson, J. Bokor, D. H. Schneider, I. Rangelow. T. Schenkel, “Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon”, DOI: 10.1016/j.mee.2004.03.037, arXiv:cond-mat/0310195 [0959] L. M. Kettle, H.-S. Goan, Sean C. Smith, L. C. L. Hollenberg, C. J. Wellard, “Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture”, J. Phys.: Cond. Matter, 16, 1011, (2004), DOI:10.1088/0953-8984/16/7/001, arXiv:cond-mat/0402183 [coed-mat.mtrl-sci] [0960] Issai Shlimak, “Isotopically engineered silicon nanostructures in quantum computation and communication”, HAIT Journal of Science and Engineering, vol. 1, pp. 196-206 (2004), arXiv:cond-mat/0403421 [cond-mat.mtrl-sci] [0961] Xuedong Hu, Belita Koiller, S. Das Sarnia. “Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence”, Phys. Rev. B 71.235332 (2005), DOI: 10.1103/PhysRevB.71.235332, arXiv:cond-mat/0412340 [cond-mat.mes-hall] [0962] Angbo Fang, Yia-Chung Chang, J. R. Tucker. “Simulation of Si:P spin-based quantum computer architecture”, Phys. Rev. B 72, 075355—Published 24 Aug. 2005. DOI:https://doi.org/10.1103/PhysRevB.72.075355 [0963] W. M. Witzel, S. Das Sarma, “Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nucleus solid-state environment” Phys. Rev. B 74, 035322 (2006). DOI: 10.1103/PhysRevB.74.035322, arXiv:cond-mat/0512323 [cond-mat.mes-hall]

Features of the Disclosure

Introduction

[0964] The list of features reflects the characteristics of the disclosure. The features and their sub-features can be combined with each other and with other features and sub-features of this proposal and with features of the description, as far as the result of this combination is meaningful. For this purpose, in case of combination, it is not necessary to include all sub-features of a feature in one feature.

[0965] Quantum Bit Constructions 1-102

General Quantum Bit (Qub) 1-102

[0966] Feature 1. Quantum bit (QUB) [0967] comprising a device for controlling a quantum dot (NV) [0968] with a substrate (D) and [0969] if necessary, with an epitaxial layer (DEP1) and [0970] with a quantum dot (NV) and [0971] with a device suitable for generating an electromagnetic wave field, in particular a microwave field (B.sub.MW) and/or a radio wave field (B.sub.RW), at the location of the quantum dot (NV), [0972] wherein the epitaxial layer (DEP1), if present, is deposited on the substrate (D), and [0973] wherein the substrate (D) and/or the epitaxial layer (DEP1), if present, has a surface (OF) and [0974] wherein the quantum dot (NV) is a paramagnetic center in the substrate (D) and/or in the epitaxial layer (DEP1), if present, and [0975] wherein the quantum dot (NV) has a quantum dot type, and [0976] wherein a solder can be precipitated along a perpendicular line (LOT) from the location of the quantum dot (NV) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [0977] wherein the perpendicular line (LOT) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a perpendicular point (LOTP), and [0978] wherein the device suitable for generating an electromagnetic wave field is located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [0979] wherein the device used to generate an electromagnetic wave field is located near the plumb point (LOTP) or at the plumb point (LOTP).

[0980] Feature 2. Quantum bit (QUB) according to feature 1, [0981] wherein the device used for generating an electromagnetic wave field, in particular a microwave field (B.sub.MW) and/or a radio wave field (B.sub.RW), is a device used for generating a circularly polarized electromagnetic wave field.

[0982] Feature 3. Quantum bit (QUB) according to feature 1 or 2, [0983] wherein the device suitable for generating an electromagnetic wave field (BRW) is firmly connected to the substrate (D) and/or the epitaxial layer (DEP1) directly or indirectly by means of an intermediate further insulation (IS2).

[0984] Feature 4. Quantum bit (QUB), in particular according to one or more of the preceding features 1 to 3, [0985] comprising a device for controlling a quantum dot (NV) [0986] with a substrate (D) and [0987] if necessary, with an epitaxial layer (DEP1) and [0988] with a quantum dot (NV) and [0989] with a horizontal line (LH) and [0990] with a vertical line (LV), [0991] wherein the epitaxial layer (DEP1), if present, is deposited on the substrate (D), and [0992] wherein the substrate (D) and/or the epitaxial layer (DEP1), if present, has a surface (OF) and [0993] wherein the quantum dot (NV) is a paramagnetic center in the substrate (D) and/or in the epitaxial layer (DEP1), if present, and [0994] wherein the quantum dot (NV) has a quantum dot type, and [0995] wherein a solder can be precipitated along a perpendicular line (LOT) from the location of the quantum dot (NV) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [0996] wherein the perpendicular line (LOT) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a perpendicular point (LOTP), and [0997] wherein the horizontal line (LH) and the vertical line (LV) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [0998] wherein the horizontal line (LH) and the vertical line (LV) cross near the plumb point (LOTP) or at the plumb point (LOTP) at a non-zero crossing angle (a).

[0999] Feature 5. Quantum bit (QUB) after the preceding feature and feature 4, [1000] wherein the horizontal line (LH) is electrically isolated from the vertical line (LV).

[1001] Feature 6. Quantum bit (QUB) after the preceding feature and feature 4, [1002] wherein the horizontal line (LH) is electrically isolated from the vertical line (LV) by means of electrical insulation (IS).

[1003] Feature 7. Quantum bit (QUB), in particular according to one or more of the preceding features 1 to 6. [1004] with a horizontal line (LH) and [1005] with a vertical line (LV), [1006] wherein the horizontal line (LH) and the vertical line (LV) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present.

[1007] Feature 8. Quantum bit (QUB), in particular according to one or more of the preceding features 1 to 7. [1008] with a horizontal line (LH) and [1009] with a vertical line (LV), [1010] wherein the horizontal line (LH) and the vertical line (LV) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1011] wherein the horizontal line (LH) and the vertical line (LV) are firmly connected to the substrate (D) and/or the epitaxial layer (DEP1), if present, directly or indirectly via a further insulation (IS2).

[1012] Feature 9. Quantum bit according to one or more of the preceding features, [1013] the horizontal line (LH) and/or the vertical line (LV) being made of material which is superconductive below a critical temperature and which is intended and/or designed in particular to be operated at this temperature.

[1014] Feature 10. Quantum bit according to the previous features [1015] the horizontal line (LH) and/or the vertical line (LV) having openings or being designed as lines guided in parallel in sections, in particular to reduce so-called pinning.

[1016] Feature 11. Quantum bit (QUB) according to one or more of the preceding features and feature 4, [1017] wherein the horizontal line (LH) and/or the vertical line (LV) for “green light” is transparent and/or [1018] wherein in particular the horizontal line (LH) and/or the vertical line (LV) is made of an electrically conductive material that is optically transparent to green light, in particular indium tin oxide (common abbreviation ITO).

[1019] Feature 12. Quantum bit (QUB) according to one or more of the preceding features 1 to 11 and the preceding feature 7 or 8 [1020] wherein the horizontal line (LH) and/or the vertical line (LV) is made of a material essentially comprising isotopes having no nucleus magnetic moment μ.

[1021] Feature 13. Nuclear quantum bit (CQUB) according to one or more of the preceding features 1 to 12 and the preceding feature 7 or 8, [1022] wherein the horizontal line (LH) and/or the vertical line (LV) is made of a material essentially comprising .sup.46Ti isotopes and/or .sup.48Ti isotopes and/or .sup.50Ti isotopes with no nucleus magnetic moment μ.

[1023] Feature 14. Quantum bit (QUB) according to one or more of the preceding features and feature 4, [1024] wherein the quantum bit (QUB) has a surface (OF) with the horizontal line (LH) and with the vertical line (LV); and [1025] wherein the quantum bit (QUB) has a bottom surface (US) opposite the surface (OF), and [1026] wherein the quantum bit (QUB) is mounted such that the bottom side (US) of the quantum bit (QUB) can be irradiated with “green light” such that the “green light” can reach and affect the quantum dot (NV) of the quantum bit (QUB).

[1027] Feature 15. Quantum bit (QUB) according to one or more of the preceding features and feature 4, [1028] wherein an angle (α) is essentially a right angle.

[1029] Feature 16. Quantum bit (QUB) according to one or more of the preceding features and feature 4, [1030] wherein the horizontal line (LH) and the vertical line (LV) have an angle of 45° with respect to the axis of the quantum dot (NV) to add the magnetic field lines of the horizontal line and the vertical line (LV).

[1031] Feature 17. Quantum bit (QUB) according to one or more of the preceding features, [1032] wherein the quantum dot type of quantum bit is characterized by a quantum dot (NV) being a paramagnetic center.

[1033] Feature 18. Quantum bit according to one or more of the preceding features, [1034] wherein the quantum dot is negatively charged.

[1035] Feature 19. Quantum bit (QUB) according to one or more of the preceding features. [1036] wherein the substrate (D) is doped with nuclear spin-free isotopes in the quantum dot (NV) region.

[1037] Feature 20. Quantum bit (QUB) according to one or more of the preceding features, [1038] wherein the quantum dot (NV) is located at a first distance (d1) along the perpendicular line (LOT) below the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1039] wherein the first distance (d1) is 2 nm to 60 nm and/or is 5 nm to 30 nm and/or is 10 nm to 20 nm, with a first distance (d1) of 5 nm to 30 nm being particularly preferred.

[1040] Feature 21. Quantum bit (QUB) according to one or more of the preceding features. [1041] wherein the horizontal line (LH, LH1) is part of a microstrip line and/or part of a tri-plate line, and/or [1042] wherein the vertical line (LV, LV1) is part of a microstrip line and/or part of a tri-plate line (SV1, LH, SV2).

[1043] Feature 22. Quantum bit (QUB) according to feature 21, [1044] wherein the microstrip line comprises a first vertical shield line (SV1) and the vertical line (LV) or [1045] wherein the microstrip line includes a first horizontal shield line (SH1) and the horizontal line (LV).

[1046] Feature 23. Quantum bit (QUB) according to feature 21. [1047] wherein the tri-plate line comprises a first vertical shield line (SV1) and a second vertical shield line (SV2) and the vertical line (LV) extending at least partially between the first vertical shield line (SV1) and the second vertical shield line (SV2), or [1048] wherein the tri-plate line comprises a first horizontal shield line (SH1) and a second horizontal shield line (SH2) and the horizontal line (LV) extending at least partially between the first horizontal shield line (SH1) and the second horizontal shield line (SH2).

[1049] Feature 24. Quantum bit (QUB) according to one or more of the preceding features 21 and 23, [1050] wherein the sum of the currents (ISV1, IV, ISV2) through the tri-plate line (SV1, LV, SV2) is zero.

[1051] Feature 25. Quantum bit (QUB) according to one or more of the preceding features 21 and 23. [1052] wherein a first further vertical solder can be precipitated along a first further vertical perpendicular line (VLOT1) parallel to the first perpendicular line (LOT) from the location of a first virtual vertical quantum dot (VVNV1) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1053] wherein the first virtual vertical quantum dot (VVNV1) is located at the first distance (d1) from the surface (OF), and [1054] wherein the first further vertical perpendicular line (VLOT1) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a first further vertical perpendicular point (VLOTP1), and [1055] wherein the horizontal line (LH) and the first vertical shielding line (SV1) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1056] wherein the horizontal line (LH) and the first vertical shield line (SV1) cross near the first vertical plumb point (VLOTP1) or at the first vertical plumb point (VLOTP1) at the non-zero crossing angle (α), and [1057] wherein a second further vertical solder can be precipitated along a second further vertical perpendicular line (VLOT2) parallel to the first perpendicular line (LOT) from the location of a second virtual vertical quantum dot (VVNV2) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1058] wherein the second virtual vertical quantum dot (VVNV2) is located at the first distance (d1) from the surface (OF), and [1059] wherein the second further vertical perpendicular line (VLOT2) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a second further vertical perpendicular point (VLOTP2), and [1060] wherein the horizontal line (LH) and the second vertical shielding line (SV2) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1061] wherein the horizontal line (LH) and the second vertical shield line (SV2) cross near the second vertical plumb point (VLOTP2) or at the second vertical plumb point (VLOTP2) at the non-zero crossing angle (α), and [1062] where the individual currents (ISV1, IV, ISV2) through the individual lines (SV1, LV, SV2) of the tri-plate line are so selected, [1063] that the magnitude of the first virtual vertical magnetic flux density vector (B.sub.VVNV1) at the location of the first virtual vertical quantum dot (VVNV1) is nearly zero, and [1064] that the magnitude of the second virtual vertical magnetic flux density vector (B.sub.VVNV2) at the location of the second virtual vertical quantum dot (VVNV2) is nearly zero, and [1065] that the magnitude of the magnetic flux density vector (B.sub.NV) at the location of the quantum dot (NV) is different from zero.

[1066] Feature 26. Quantum bit (QUB) according to one or more of the preceding features 21 to 25, [1067] wherein a first further horizontal plumb line can be precipitated along a first further horizontal plumb line (HLOT1) parallel to the first plumb line (LOT) from the location of a first virtual horizontal quantum dot (VHNV1) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1068] wherein the first virtual horizontal quantum dot (VHNV1) is located at the first distance (d1) from the surface (OF), and [1069] wherein the first further horizontal perpendicular line (VLOT1) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a first further horizontal perpendicular point (HLOTP1), and [1070] wherein the vertical line (LV) and the first horizontal shielding line (SH1) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1071] wherein the vertical line (LV) and the first horizontal shield line (SH1) cross near the first horizontal plumb point (HLOTP1) or at the first horizontal plumb point (HLOTP1) at the non-zero crossing angle (α), and [1072] wherein a second further horizontal plumb line can be precipitated along a second further horizontal plumb line (HLOT2) parallel to the first plumb line (LOT) from the location of a second virtual horizontal quantum dot (VHNV2) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1073] wherein the second virtual horizontal quantum dot (VHNV2) is located at the first distance (d1) from the surface (OF), and [1074] wherein the second further horizontal perpendicular line (HLOT2) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a second further horizontal perpendicular point (HLOTP2), and [1075] wherein the vertical line (LV) and the second horizontal shielding line (SH2) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1076] wherein the vertical line (LV) and the second horizontal shield line (SH2) cross near the second horizontal plumb point (HLOTP2) or at the second horizontal plumb point (HLOTP2) at the non-zero crossing angle (α), and [1077] where the individual currents (ISH1, IH, ISH2) through the individual lines (SH1, LH, SH2) of the triplate line are so selected, [1078] that the magnitude of the first virtual horizontal magnetic flux density vector (B.sub.VHNV1) at the location of the first virtual horizontal quantum dot (VHNV1) is nearly zero, and [1079] that the magnitude of the second virtual horizontal magnetic flux density vector (B.sub.VHNV2) at the location of the second virtual horizontal quantum dot (VHNV2) is nearly zero, and that the magnitude of the magnetic flux density vector (B.sub.NV) at the location of the quantum dot (NV) is different from zero.

[1080] Feature 27. Quantum bit (QUB) according to one or more of the preceding features 21 to 25. [1081] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected by means of at least one first horizontal ohmic contact (KH11) to the first horizontal shield line (SH1), and/or [1082] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected by means of at least one second horizontal ohmic contact (KH12) to the second horizontal shield line (SH2), and/or [1083] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected to the first vertical shield line (SV1) by means of at least one first vertical ohmic contact (KV11), and/or [1084] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected by means of at least one second vertical ohmic contact (KV12) to the second vertical shield line (SV2) and/or [1085] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected to an exhaust line by means of at least one second vertical ohmic contact (KV12).

[1086] Feature 28. Quantum bit (QUB) according to the previous features [1087] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Diamond Based Quantum Bit (QUB) 29-49

[1088] Feature 29. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and feature 4, [1089] wherein the horizontal line (LH) and the vertical line (LV) have an angle of 45° with respect to the axis of the quantum dot (NV11n the form of, in particular, the NV center (NV) to add the magnetic field lines of the horizontal line and the vertical line (LV).

[1090] Feature 30. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to feature 29, [1091] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material.

[1092] Feature 31. Diamond based quantum bit (QUB) according to the previous feature, [1093] wherein the surface normal of the diamond material points in one of the directions (111) or (100) or (113).

[1094] Feature 32. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 31. [1095] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material and a quantum dot (NV) is a NV center in the diamond material.

[1096] Feature 33. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 32, [1097] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond martial and a quantum dot (NV) is a SiV center in the diamond material.

[1098] Feature 34. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 33, [1099] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material and a quantum dot (NV) is an L2 center or ST1 center in the diamond material.

[1100] Feature 35. Diamond based quantum bit (QUB) according to one or more of the preceding features. 1 to 28 and/or according to one or more of the preceding features 29 to 34 [1101] whereby the quantum dot type of the quantum bit (QUB) is characterized by, [1102] that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1103] that the quantum dot (NV) comprises a vacancy in the diamond material.

[1104] Feature 36. Diamond based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 35 [1105] whereby the quantum dot type of the quantum bit (QUB) is characterized by, [1106] that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1107] that the quantum dot (NV) comprises a Si atom or a Ge atom or a N atom or a P atom or an As atom or a Sb atom or a Bi atom or a Sn atom or a Mn atom or an F atom or any other atom that generates a paramagnetic impurity center in the diamond material.

[1108] Feature 37. Diamond based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 36 [1109] wherein the quantum dot type of the quantum bit (QUB) is characterized in, [1110] that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1111] that a quantum dot (NV) is an NV center with an .sup.14N isotope as the nitrogen atom.

[1112] Feature 38. Diamond based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 37 [1113] whereby the quantum dot type of the quantum bit (QUB) is characterized by, [1114] that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1115] that a quantum dot (NV) is an NV center in the diamond material with an .sup.15N isotope as the nitrogen atom.

[1116] Feature 39. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 38, [1117] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1118] that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1119] that the quantum dot (NV) is an NV center and/or other paramagnetic impurity center in the diamond material and [1120] that a .sup.13C isotope and/or an .sup.15N isotope and/or another isotope with a non zero nucleus magnetic moment μ is located in the immediate proximity in coupling range to the NV center or the paramagnetic impurity center, respectively.

[1121] Feature 40. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 38 [1122] wherein the quantum dot type of the quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1123] wherein one or more .sup.13C isotopes and/or one or more other carbon isotopes having a non-zero nucleus magnetic moment μ is located in the vicinity of the quantum dot (NV), and [1124] where proximity is to be understood here as meaning that the magnetic field of the nuclear spin of the one or more .sup.13C atoms or of the one or more other silicon isotopes with a non-zero nucleus magnetic moment can influence the spin of an electron configuration of the quantum dot (NV) and that the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of one or more of these .sup.13C isotopes or of the one or more other silicon isotopes with a non-zero nucleus magnetic moment μ.

[1125] Feature 41. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 39, [1126] wherein the quantum dot type of the quantum bit is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1127] wherein in the diamond material, one or more isotopes having a non-zero nucleus magnetic moment μ are arranged as a nuclear quantum dot (CI) in the vicinity of the quantum dot (NV); and [1128] wherein proximity here is to be understood as meaning that the magnetic field of the nucleus magnetic moment μ of the one or more isotopes can influence the spin of an electron configuration of the quantum dot (NV), and that the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of the one or more of these isotopes by means of the non-zero nucleus magnetic moment μ of this one isotope or the non-zero nucleus magnetic momentum p of the several isotopes.

[1129] Feature 42. Diamond based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 41 [1130] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1131] wherein the diamond material comprises an epitaxially grown layer (DEP1) having substantially .sup.12C isotopes and/or .sup.14C isotopes.

[1132] Feature 43. Diamond based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 42 [1133] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1134] wherein the diamond material comprises an epitaxially grown layer (DEP1) having essentially .sup.12C isotopes and/or .sup.14C isotopes.

[1135] Feature 44. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 43 [1136] wherein the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1137] where the substrate (D) or epitaxial layer (DEP1) is n-doped in the quantum dot (NV) region.

[1138] Feature 45. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 45. [1139] wherein the substrate (D) or epitaxial layer (DEP1) comprises a diamond material, and [1140] wherein the substrate (D) or epitaxial layer (DEP1) is doped with sulfur in the quantum dot (NV) region.

[1141] Feature 46. Diamond-based quantum bit according to one or more of the features 46 to 47, [1142] wherein the quantum dot (NV) of the quantum bit (QUB) is negatively charged and is an NV center or other paramagnetic impurity center.

[1143] Feature 47. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 46, [1144] wherein the substrate (D) or epitaxial layer (DEP1) is doped with nuclear spin-free sulfur in the quantum dot (NV) region.

[1145] Feature 48. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 47, [1146] wherein the substrate (D) or epitaxial layer (DEP1) doped with .sup.32S isotopes in the quantum dot (NV) region.

[1147] Feature 49. Diamond-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 29 to 48. [1148] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Silicon-Based Quantum Bit (QUB) 50-67

[1149] Feature 50. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and feature 4 [1150] wherein the horizontal line (LH) and the vertical line (LV) have an angle of 45° with respect to the axis of the quantum dot (NV) in the form of a G-center (NV) to add the magnetic field lines of the horizontal line and the vertical line (LV).

[1151] Feature 51. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to feature 50, [1152] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal.

[1153] Feature 52. Silicon based quantum bit (QUB) according to the previous feature, [1154] wherein the surface normal of the silicon crystal points in one of the directions (111) or (100) or (113).

[1155] Feature 53. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 52 [1156] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and a quantum dot (NV) is a G center in the silicon material.

[1157] Feature 54. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 53 [1158] whereby the quantum dot type of the quantum bit (QUB) is characterized by, [1159] that the substrate (D) or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1160] that the quantum dot (NV) includes a vacancy.

[1161] Feature 55. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 54 [1162] whereby the quantum dot type of the quantum bit (QUB) is characterized by, [1163] that the substrate (D) or the epitaxial layer (DEN) comprises a silicon material, in particular a silicon crystal, and [1164] that the quantum dot (NV) comprises a C isotope or a Ge isotope or an N isotope or a P isotope or an As isotope or an Sb isotope or a Bi isotope or a Sn isotope or an Mn isotope or an F isotope or any other atom that generates an impurity center with a paramagnetic behavior in the silicon material.

[1165] Feature 56. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 55, [1166] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1167] that the substrate (D) or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1168] that a quantum dot (NV) is a G-center with a .sup.12C isotope as carbon atom.

[1169] Feature 57. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 56, [1170] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1171] that the substrate (D) or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1172] that a quantum dot (NV) is a G-center in the silicon material with a .sup.13C isotope as a carbon atom.

[1173] Feature 58. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 57. [1174] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1175] that the substrate (D) or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1176] that the quantum dot (NV) is a G-center and/or other paramagnetic impurity center in the silicon material: and [1177] that a .sup.29Si isotope and/or another isotope with a non-zero nucleus magnetic moment μ is located in immediate proximity within coupling range of the G-center or the paramagnetic impurity center, respectively.

[1178] Feature 59. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 58, [1179] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1180] nucleus-wherein one or more .sup.29Si isotopes and/or one or more other silicon isotopes having a non-zero nucleus magnetic moment μ is located in the vicinity of the quantum dot (NV), and [1181] wherein proximity is to be understood here as meaning that the magnetic field of the nuclear spin of the one or more .sup.29Si isotopes or of the one or more other silicon isotopes with a non-zero nucleus magnetic moment μ can influence the spin of an electron configuration of the quantum dot (NV) and that the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of one or more of these .sup.29Si isotopes or of the one or more other silicon isotopes with a non-zero nucleus magnetic moment μ.

[1182] Feature 60. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 59, [1183] wherein the quantum dot type of the quantum bit is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1184] wherein in the silicon material one or more isotopes having a non-zero nucleus magnetic moment μ are arranged as a nuclear quantum dot (CI) in the vicinity of the quantum dot (NV), and [1185] wherein proximity here is to be understood as meaning that the magnetic field of the nucleus magnetic moment of the one or more isotopes can influence the spin of an electron configuration of the quantum dot (NV) and that the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of the one or more of these isotopes by means of the non-zero nucleus magnetic moment μ of this isotope or by means of the non-zero nucleus magnetic momentum μ of these isotopes.

[1186] Feature 61. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 60, [1187] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1188] wherein the silicon material comprises an epitaxially grown layer (DEP1) having essentially .sup.28Si isotopes and/or .sup.29Si isotopes.

[1189] Feature 62. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 61 [1190] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1191] wherein the diamond material comprises a substantially isotopically pure epitaxially grown layer (DEP1) essentially of .sup.28Si isotopes.

[1192] Feature 63. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 62 [1193] wherein the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1194] wherein the substrate (D) or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the quantum dot (NV)

[1195] Feature 64. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 63 [1196] wherein the substrate (D) or epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1197] wherein the substrate (D) or epitaxial layer (DEP1) is doped in the region of the quantum dot (NV) with one or more of the following isotopes and namely. [1198] for n-doping with .sup.20Te, .sup.122Te, .sup.124Te, .sup.126Te, .sup.126Te, .sup.130Te, .sup.46Ti, .sup.48Ti, .sup.50Ti, .sup.12C .sup.14C, .sup.74Se, .sup.76Se, .sup.78Se, .sup.80Se, .sup.130Ba, .sup.132Ba, .sup.134Ba, .sup.136Ba, .sup.138Ba, .sup.32S, .sup.34S, and .sup.36S or [1199] for p-doping with .sup.10Be, .sup.102Pd, .sup.104Pd, .sup.106Pd, .sup.108Pd, .sup.110Pd, .sup.204Tl.

[1200] Feature 65. Silicon-based quantum bit according to one or more of the features 63 to 64, [1201] wherein the quantum dot (NV) of the quantum bit (QUB) is charged and is a G center or other paramagnetic impurity center.

[1202] Feature 66. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 65, [1203] where the substrate (D) or epitaxial layer (DEP1) in the quantum dot (NV) region is doped with isotopes without nucleus magnetic moment μ or with nuclear spin-free isotopes.

[1204] Feature 67. Silicon-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 50 to 66, [1205] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Silicon Carbide Based Quantum Bit (QUB) 68-102

[1206] Feature 68. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and feature 4 [1207] wherein the horizontal line (LH) and the vertical line (LV) have an angle of 45° with respect to the axis of the of the quantum dot (NV) in the form of a V.sub.Si center (NV) or a DV center and/or a V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center to add the magnetic field lines of the horizontal line and the vertical line (LV).

[1208] Feature 69. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to feature 68, [1209] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEN) comprises silicon carbide, in particular a silicon carbide crystal.

[1210] Feature Feature 70. Silicon carbide-based quantum bit (QUB) according to the previous feature. [1211] wherein the surface normal of the silicon carbide crystal points in one of the directions (111) or (100) or (113).

[1212] Feature 71. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 70, [1213] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and a quantum dot (NV) is a V.sub.si center and/or a DV center and/or a V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center in the silicon carbide material.

[1214] Feature 72. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 71, [1215] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1216] that the substrate (D) or the epitaxial layer (DEP1) comprises silicon carbide, in particular a silicon carbide crystal, and [1217] that the quantum dot (NV) includes a vacancy.

[1218] Feature 73. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 72, [1219] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1220] that the substrate (D) or the epitaxial layer (DEP1) comprises silicon carbide, in particular a silicon carbide crystal, and [1221] that the quantum dot (NV) comprises a vacancy or a C atom at a non-C position or a Si atom at a non-Si position or a Ge atom or a N atom or a P atom or an As atom or a Sb atom or a Bi atom or a Sn atom or a Mn atom or a F atom or any other atom that generates a paramagnetic impurity center in silicon carbide.

[1222] Feature 74. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 73, [1223] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1224] that the substrate (D) or the epitaxial layer (DEP1) comprises silicon carbide, in particular a silicon carbide crystal, and [1225] that a quantum dot (NV) is a V.sub.Si center with a .sup.12C isotope as the carbon atom of the V.sub.Si center

[1226] Feature 75. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 74, [1227] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1228] that the substrate (D) or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1229] that a quantum dot (NV) is a VSi center and/or a DV center and/or a V.sub.CV.sub.SI center and/or a CAV.sub.SI center and/or a N.sub.CV.sub.SI center and/or another paramagnetic impurity center in the silicon carbide material, and [1230] that a .sup.13C isotope and/or a .sup.29Si isotope and/or another isotope having a non zero nucleus magnetic moment μ in immediately adjacent within coupling range to the V.sub.Si center or to the DV center or to the V.sub.CV.sub.SI center or to the CAV.sub.Si center or to the N.sub.CV.sub.SI center or to the paramagnetic impurity center, respectively.

[1231] Feature 76. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 75. [1232] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1233] wherein one or more .sup.29Si isotopes and/or one or more other silicon isotopes having a non-zero nucleus magnetic moment μ are located in the vicinity of the quantum dot (NV) and/or [1234] wherein one or more .sup.13C isotopes and/or one or more other carbon isotopes having a non-zero nucleus magnetic moment μ are located in the vicinity of the quantum dot (NV), and [1235] whereby proximity is to be understood here in such a way that the magnetic field of the nuclear spin of the one or more .sup.29Si isotopes or of the one or more other silicon isotopes with a non-zero nucleus magnetic moment it or of the one or more .sup.13C isotopes or of the one or more other carbon isotopes with a non-zero nucleus magnetic moment μ can influence the spin of an electron configuration of the quantum dot (NV) and that the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of one or more of these .sup.29Si isotopes or of one or more other silicon isotopes having a non-zero nucleus magnetic moment μ or one or more of said .sup.13C isotopes or one or more other carbon isotopes having a non-zero nucleus magnetic moment μ.

[1236] Feature 77. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 76, [1237] wherein the quantum dot type of the quantum bit is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1238] wherein in the silicon carbide material, one or more isotopes having a non zero nucleus magnetic moment μ are arranged as a nuclear quantum dot (CI) in the vicinity of the quantum dot (NV), and [1239] wherein proximity here is to be understood as the magnetic field of the nucleus magnetic moment μ of the one or more isotopes can influence the spin of an electron configuration of the quantum dot (NV) and the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of the one or more of these isotopes by means of their nucleus magnetic momentum μ.

[1240] Feature 78. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 77, [1241] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1242] wherein the silicon material is an epitaxially grown layer (DEP1) that is essentially [1243] .sup.28Si isotopes and/or .sup.29Si isotopes and [1244] .sup.12C isotope and/or .sup.14C isotope includes.

[1245] Feature 79. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 78, [1246] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1247] wherein the silicon carbide material comprises an epitaxially grown layer (DEP1) of essentially isotopically pure .sup.28Si isotopes and essentially isotopically pure .sup.12C isotopes, i.e., essentially comprises .sup.28Si.sup.12C.

[1248] Feature 80. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 79, [1249] wherein the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1250] wherein the substrate (D) or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the quantum dot (NV).

[1251] Feature 81. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 80, [1252] wherein the substrate (D) or epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1253] where the substrate (D) or epitaxial layer (DEP1) in the quantum dot (NV) region is doped with isotopes that have no nucleus magnetic moment μ.

[1254] Feature 82. Silicon carbide-based quantum bit according to one or more of the features 63 to 64 [1255] wherein the quantum dot (NV) of the quantum bit (QUB) is charged and is a V.sub.Si center or a DV center or a V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center or another paramagnetic impurity center.

[1256] Feature 83. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 81, [1257] wherein the substrate (D) or epitaxial layer (DEP1) in the quantum dot (NV) region is doped with isotopes without nucleus magnetic moment μ or with nuclear spin-free isotopes.

[1258] Feature 84. Silicon carbide-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the preceding features 68 to 82, [1259] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Mixed Crystal Based Quantum Bit (QUB) 68

[1260] Feature 85. Mixed crystal-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and feature 4 [1261] wherein, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, the mixed crystal comprises essentially one element of the IV main group of the periodic table, i.e., is only a crystal without mixture with other elements, or [1262] wherein, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, the mixed crystal essentially comprises several elements of the IVth —main group of the periodic table.

[1263] Feature 86. Mixed crystal-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 [1264] wherein, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, the mixed crystal essentially comprises atoms of two different elements of the IV.sup.th main group of the periodic table, or [1265] wherein, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, the mixed crystal essentially comprises atoms of three different elements of main group IV of the periodic table, or [1266] the mixed crystal essentially comprising, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, atoms of four different elements of the IV main group of the periodic table.

[1267] Feature 87. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the features 85 to 86 and according to feature 85. [1268] where the quantum dot (NV) has an axis, and [1269] where the horizontal line (LH) and the vertical line (LV) have an angle of 45° with respect to the axis of the quantum dot (NV) to add the magnetic field lines of the horizontal line and the vertical line (LV).

[1270] Feature 88. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and/or according to one or more of the features 85 to 87 and according to feature 85, [1271] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85.

[1272] Feature 89. Mixed crystal-based quantum bit (QUB) according to the previous feature. [1273] wherein the surface normal of the mixed crystal points in one of the directions (111) or (100) or (113).

[1274] Feature 90. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 89 feature 85, [1275] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1276] that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1277] that the quantum dot (NV) includes a vacancy.

[1278] Feature 91. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 90 and according to feature 85, [1279] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1280] that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1281] that the quantum dot (NV) is a defect or an atom of the IV.sup.th main group or an atom of the II.sup.nd main group or the III.sup.rd main group, main group, in particular a C atom or a Si atom or a Ge atom or Sn atom or a Pb atom or a N atom or a P atom or an As atom or an Sb atom or a Bi atom or a B atom or an Al atom or a Ga atom or a Tl atom or a Mn atom or an F atom or another atom which generates a paramagnetic impurity center in the mixed crystal.

[1282] Feature 92. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 91 and according to feature 85, [1283] whereby the quantum dot type of the quantum bit (QUB) is characterized by, [1284] in that the substrate (D) or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1285] in that a quantum dot (NV) in the mixed crystal comprises one isotope of the isotopes or a plurality of isotopes of the isotopes .sup.12C, .sup.14C, .sup.28Si, .sup.70Ge, .sup.72Ge, .sup.74Ge, .sup.76Ge, .sup.112Sn, .sup.114Sn, .sup.116Sn, .sup.118Sn, .sup.120Sn, .sup.122Sn, .sup.124Sn, .sup.204Pb, .sup.206Pb, .sup.208Pb and/or one isotope of the isotopes or a plurality of isotopes of the isotopes WITHOUT a nucleus magnetic moment, [1286] wherein the one or more isotopes form the quantum dot (NV) in the form of a paramagnetic impurity center, and [1287] whereas said one or more isotopes being located at a position or positions within said impurity center that are not regular lattice positions for said one or more isotopes within said mixed crystal.

[1288] Feature 93. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 92 and according to feature 85 [1289] whereas the quantum dot type of the quantum bit (QUB) is characterized by, [1290] in that the substrate (D) or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1291] that a quantum dot (NV) in the mixed crystal comprises one or more isotopes of the isotopes .sup.13C, .sup.29Si, .sup.73Ge, .sup.115Sn, .sup.117Sn, .sup.119Sn, .sup.207Pb and/or one or more isotopes of the isotopes WITH a non-zero nucleus magnetic moment μ, [1292] where the one isotope or the several isotopes are [1293] form the quantum dot (NV) in the form of a paramagnetic impurity center and/or [1294] are in the immediate vicinity within coupling range of the fault center.

[1295] Feature 94. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 93 and according to feature 85, [1296] wherein the quantum dot type of the quantum bit (QUB) is characterized by, [1297] that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 83, and [1298] wherein one or more .sup.13C isotopes and/or one or more .sup.29Si isotopes and/or one or more .sup.73Ge isotopes and/or one or more .sup.115Sn isotopes and/or one or more .sup.117Sn isotopes and/or one or more .sup.119Sn isotopes and/or one or more .sup.207Pb isotopes and/or one or more other isotopes having a non-zero nucleus magnetic moment μ is located in the vicinity of the quantum dot (NV) and/or [1299] wherein proximity is to be understood here as meaning that the magnetic field of the nuclear spin of said one isotope or said plurality of isotopes having a non-zero nucleus magnetic moment μ can influence the spin of an electron configuration of the quantum dot (NV) and that the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of said one isotope or said plurality of isotopes having non-zero nucleus magnetic momentum μ.

[1300] Feature 95. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 94 and according to feature 85, [1301] wherein the quantum dot type of quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1302] wherein in the material of the mixed crystal, one or more isotopes having a non-zero nucleus magnetic moment μ are arranged as a nuclear quantum dot (CI) in the vicinity of the quantum dot (NV), and [1303] wherein proximity here is to be understood as the magnetic field of the nucleus magnetic moment μ of the one or more isotopes can influence the spin of an electron configuration of the quantum dot (NV) and the spin of the electron configuration of the quantum dot (NV) can influence the nuclear spin of the one or more of these isotopes by means of their nucleus magnetic momentum μ.

[1304] Feature 96. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 95 and according to feature 85 [1305] wherein the quantum dot type of the quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1306] wherein the material of the mixed crystal comprises an epitaxially grown layer (DEP1) essentially comprising one or more isotopic types from the following isotopic list: [1307] .sup.12C, .sup.14C, .sup.28Si, .sup.30Si, .sup.72Ge, .sup.74Ge, .sup.76Ge, .sup.112Sn, .sup.114Sn, .sup.116Sn, .sup.118Sn, .sup.120Sn, .sup.122Sn, .sup.124Sn, .sup.204Pb, .sup.206Pb, .sup.208Pb.

[1308] Feature 97. Mixed crystal-based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 96 and according to feature 85 and according to feature 96 [1309] wherein an isotope comprising the material of the mixed crystal is essentially isotopically pure.

[1310] Feature 98. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 97 and according to feature 85 [1311] wherein the quantum dot type of the quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1312] wherein the substrate (D) or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the quantum dot (NV).

[1313] Feature 99. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 98 and according to feature 85 [1314] wherein the quantum dot type of the quantum bit (QUB) is characterized in that the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 85, and [1315] where the substrate (D) or epitaxial layer (DEP1) in the quantum dot (NV) region is doped with isotopes that have no nucleus magnetic moment μ.

[1316] Feature 100. Mixed crystal-based quantum bit (QUB) according to one or more of the features 98 to 99, [1317] wherein the quantum dot (NV) of the quantum bit (QUB) is charged, in particular negatively charged, and is an impurity center.

[1318] Feature 101. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 100 and according to feature 85, [1319] wherein the substrate (D) or epitaxial layer (DEP1) in the quantum dot (NV) region is doped with isotopes without magnetic moment μ or with nuclear spin-free isotopes.

[1320] Feature 102. Mixed crystal based quantum bit (QUB) according to one or more of the preceding features 1 to 28 and according to feature 85 and/or according to one or more of the features 85 to 101 and according to feature 85, [1321] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

[1322] Nuclear Quantum Bit Constructions 103-202

General Nucleus (Spin) Quantum Bit (CQUB) 103-202

[1323] Feature 103 Nuclear quantum bit (CQUB) [1324] comprising a device for controlling a nuclear quantum dot (CI) [1325] with a substrate (D) and [1326] if necessary, with an epitaxial layer (DEP1) and [1327] with a nuclear quantum dot (CI) and [1328] using a device capable of generating a circularly polarized wave (B.sub.RW) electromagnetic field at the location of the nuclear quantum dot (CI). [1329] wherein the epitaxial layer (DEP1), if present, is deposited on the substrate (D), and [1330] wherein the substrate (D) and/or the epitaxial layer (DEP1), if present, has a surface (OF) and [1331] wherein the nuclear quantum dot (CI) has a magnetic moment, in particular a nuclear spin, and [1332] wherein the device suitable for generating an electromagnetic wave field (B.sub.RW) is located on the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present.

[1333] Feature 104. Nuclear quantum bit (CQUB) according to feature 103, [1334] wherein the device suitable for generating an electromagnetic wave field (Blew) is suitable for generating an electromagnetic circularly polarized wave field (Baw).

[1335] Feature 105. Nuclear quantum bit (CQUB) according to feature 103 or 104, [1336] wherein the device suitable for generating an electromagnetic wave field (B.sub.RW) firmly connected to the substrate (D) and/or to the epitaxial layer (DEP1) and/or to the surface (OF) of the substrate (D) and/or to the surface (OF) of the epitaxial layer (DEP1) directly or indirectly by means of an insulation (IS) or an intermediate further insulation (IS2).

[1337] Feature 106. Nuclear quantum bit (CQUB) according to one or more of the features 103 to 105 [1338] wherein a solder can be precipitated along a perpendicular line (LOT) from the location of the nuclear quantum dot (CI) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1339] wherein the perpendicular line (LOT) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a perpendicular point (LOTP), and [1340] wherein the device used to generate an electromagnetic wave field, in particular a circularly polarized electromagnetic wave field, in particular a radio wave field (Blew), is located near the plumb point (LOTP) or at the plumb point (LOTP).

[1341] Feature 107. Nuclear quantum bit (CQUB), in particular according to one or more of the preceding features 103 to 106, [1342] with a horizontal line (LH) and [1343] with a vertical line (LV), [1344] wherein the horizontal line (LH) and the vertical line (LV) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present.

[1345] Feature 108. Nuclear quantum bit (CQUB), in particular according to one or more of the preceding features 103 to 107, [1346] with a horizontal line (LH) and [1347] with a vertical line (LV), [1348] wherein the horizontal line (LH) and the vertical line (LV) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1349] wherein the horizontal line (LH) and the vertical line (LV) are firmly connected to the substrate (D) and/or the epitaxial layer (DEP1), if present, directly or indirectly via a further insulation (IS2).

[1350] Feature 109. Nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 107, [1351] wherein the horizontal line (LH) and the vertical line (LV) constitute the device suitable for generating an electromagnetic wave field, in particular a circularly polarized electromagnetic wave field, in particular a radio wave field (B.sub.RW), at the location of the nuclear quantum dot (CI).

[1352] Feature 110. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 109 and the preceding feature 107 or 108 [1353] wherein a solder can be precipitated along a perpendicular line (LOT) from the location of the nuclear quantum dot (CI) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1354] wherein the perpendicular line (LOT) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a perpendicular point (LOTP), and [1355] wherein the horizontal line (LH) and the vertical line (LV) cross near the plumb point (LOTP) or at the plumb point (LOTP) at a non-zero crossing angle (α).

[1356] Feature 111. Nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 110 and feature 107 or 108, [1357] wherein the horizontal line (LH) is electrically isolated from the vertical line (LV).

[1358] Feature 112. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 111 and the preceding feature 107 or 108, [1359] wherein the horizontal line (LH) is electrically isolated from the vertical line (LV) by means of electrical insulation (IS).

[1360] Feature 113. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 112 and the preceding feature 107 or 108, [1361] wherein the horizontal line (LH) and/or the vertical line (LV) is transparent to green light, and [1362] wherein in particular the horizontal line (LH) and/or the vertical line (LV) is made of an electrically conductive material that is optically transparent to green light, in particular of indium tin oxide (common abbreviation ITO).

[1363] Feature 114. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 113 and the preceding feature 107 or 108, [1364] wherein the horizontal line (LH) and/or the vertical line (LV) is made of a material essentially comprising isotopes having no nucleus magnetic moment μ.

[1365] Feature 115. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 114 and the preceding feature 107 or 108, [1366] wherein the horizontal lead (LH) and/or the vertical lead (LV) is made of a material essentially comprising .sup.46Ti isotopes and/or .sup.48Ti isotopes and/or .sup.50Ti isotopes with no nucleus magnetic moment μ.

[1367] Feature 116. Nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 113 and feature 110, [1368] where an angle (α) is essentially a right angle.

[1369] Feature 117. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 116, [1370] wherein the substrate (D) comprises a paramagnetic center.

[1371] Feature 118. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 117, [1372] wherein the substrate (D) comprises a quantum dot (NV).

[1373] Feature 119. Nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 118, [1374] wherein a paramagnetic center having a charge carrier or charge carrier configuration is located near the nuclear quantum dot (CI); and [1375] wherein the charge carrier or charge carrier configuration has a charge carrier spin state; and [1376] wherein the nuclear quantum dot (CI) has a nuclear spin state and [1377] where proximity here is to be understood in this way, [1378] that the nuclear spin state can influence the charge carrier spin state and/or [1379] that the carrier spin state can affect the nuclear spin state.

[1380] Feature 120. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 119. [1381] wherein the substrate (D) is doped with nuclear spin-free isotopes in the region of the nuclear quantum dot (CI).

[1382] Feature 121. Nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 120, [1383] wherein the nuclear quantum dot (CI) is located at a first nucleus distance (d1′) along the perpendicular line (LOT) below the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1384] wherein the first nucleus spacing (d1′) is 2 nm to 60 nm and/or is 5 nm to 30 nm and/or is 10 nm to 20 nm, with a first nucleus spacing (d1′) of 5 nm to 30 nm being particularly preferred.

[1385] Feature 122. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 121, [1386] wherein the horizontal line (LH, LH1) is part of a microstrip line and/or part of a tri-plate line, and/or [1387] wherein the vertical line (LV. LV1) is pan of a microstrip line and/or part of a tri-plate line (SV1, LH, SV2).

[1388] Feature 123. Nuclear quantum bit (CQUB) according to feature 122, [1389] wherein microstrip line comprises a first vertical shield line (SV1) and the vertical line (LV) or [1390] wherein microstrip line includes a first horizontal shield line (SH1) and the horizontal line (LH).

[1391] Feature 124. Nuclear quantum bit (CQUB) according to feature 122, [1392] wherein tri-plate line comprises a first vertical shield line (SV1) and a second vertical shield line (SV2) and the vertical line (LV) extending between the first vertical shield line (SV1) and the second vertical shield line (SV2), or [1393] wherein tri-plate line comprises a first horizontal shield line (SH1) and a second horizontal shield line (SH2) and the horizontal line (LV) extending between the first horizontal shield line (SH1) and the second horizontal shield line (SH2).

[1394] Feature 125. Nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 124, [1395] wherein the sum of the currents through the tri-plate line (SV1, LV, SV2) is zero.

[1396] Feature 126. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 125, [1397] wherein a first further vertical solder can be precipitated along a first further vertical perpendicular line (VLOT1) parallel to the first perpendicular line (LOT) from the location of a first virtual vertical nuclear quantum dot (VVCI1) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1398] wherein the first virtual vertical nuclear quantum dot (VVCI1) is located at the first distance (d1) from the surface (OF), and [1399] wherein the first further vertical perpendicular line (VLOT1) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a first further vertical perpendicular point (VLOTP1), and [1400] wherein the horizontal line (LH) and the first vertical shielding line (SV1) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1401] wherein the horizontal line (LH) and the first vertical shield line (SV1) cross near the first vertical plumb point (VLOTP1) or at the first vertical plumb point (VLOTP1) at the non-zero crossing angle (α), and [1402] wherein a second further vertical solder can be precipitated along a second further vertical perpendicular line (VLOT2) parallel to the first perpendicular line (LOT) from the location of a second virtual vertical nuclear quantum dot (VVCI2) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1403] wherein the second virtual vertical nuclear quantum dot (VVCI2) is located at the first distance (d1) from the surface (OF), and [1404] wherein the second further vertical perpendicular line (VLOT2) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a second further vertical perpendicular point (VLOTP2), and [1405] wherein the horizontal line (LH) and the second vertical shielding line (SV2) are located on the surface of the substrate (D) and/or the epitaxial layer (DER), if present, and [1406] wherein the horizontal line (LH) and the second vertical shield line (SV2) cross near the second vertical plumb point (VLOTP2) or at the second vertical plumb point (VLOTP2) at the non-zero crossing angle (α), and [1407] wherein the individual currents (ISV1, IV, ISV2) through the individual lines (SV1, LV, SV2) of the tri-plate line are so selected, [1408] that the magnitude of the first virtual vertical magnetic flux density vector (B.sub.VVCI1) at the location of the first virtual vertical nuclear quantum dot (VVCI1) is nearly zero, and [1409] that the magnitude of the second virtual vertical magnetic flux density vector (B.sub.VVCI2) at the location of the second virtual vertical nuclear quantum dot (VVCI2) is nearly zero, and [1410] that the magnitude of the magnetic flux density vector (BCI) at the location of the nuclear quantum dot (CI) is different from zero.

[1411] Feature 127. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 126, [1412] wherein a first further horizontal plumb line can be precipitated along a first further horizontal plumb line (HLOT1) parallel to the first plumb line (LOT) from the location of a first virtual horizontal nuclear quantum dot (VHCI1) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1413] wherein the first virtual horizontal nuclear quantum dot (VHCIV1) is located at the first distance (d1) from the surface (OF), and [1414] wherein the first further horizontal perpendicular line (HLOT1) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a first further horizontal perpendicular point (HLOTP1), and [1415] wherein the vertical line (LV) and the first horizontal shielding line (SH1) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1416] wherein the vertical line (LV) and the first horizontal shield line (SH1) cross near the first horizontal plumb point (HLOTP1) or at the first horizontal plumb point (HLOTP1) at the non-zero crossing angle (α), and [1417] wherein a second further horizontal plumb line can be precipitated along a second further horizontal plumb line (HLOT2) parallel to the first plumb line (LOT) from the location of a second virtual horizontal nuclear quantum dot (VHCI2) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1418] wherein the second virtual horizontal nuclear quantum dot (VHCI2) is located at the first distance (d1) from the surface (OF), and [1419] wherein the second further horizontal perpendicular line (HLOT2) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a second further horizontal perpendicular point (HLOTP2), and [1420] wherein the vertical line (LV) and the second horizontal shielding line (SH2) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1421] wherein the vertical line (LV) and the second horizontal shield line (SH2) cross near the second horizontal plumb point (HLOTP2) or at the second horizontal plumb point (HLOTP2) at the non-zero crossing angle (α), and [1422] wherein the individual currents (ISH1, IH, ISH2) through the individual lines (SH1, LH, SH2) of the Tri-Plate line are so selected, [1423] that the magnitude of the first virtual horizontal magnetic flux density vector (B.sub.VHCI1) at the location of the first virtual horizontal nuclear quantum dot (VHCI1) is nearly zero, and [1424] that the magnitude of the second virtual horizontal magnetic flux density vector (B.sub.VHCI2) at the location of the second virtual horizontal quantum dot (VHCI2) is nearly zero, and [1425] that the magnitude of the magnetic flux density vector (B.sub.NV) at the location of the nuclear quantum dot (CI) is different from zero.

[1426] Feature 128. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 127, [1427] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected by means of at least one first horizontal ohmic contact (KH11) to the first horizontal shield line (SH1), and/or [1428] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected by means of at least one second horizontal ohmic contact (KH12) to the second horizontal shield line (SH2), and/or [1429] wherein in the region or in the vicinity of the perpendicular point (LOTP) the substrate (D) is connected to the first vertical shield line (SV1) by means of at least one first vertical ohmic contact (KV11), and/or [1430] wherein, in the region or vicinity of the perpendicular point (LOTP), the substrate (D) is connected to the second vertical shield line (SV2) by means of at least one second vertical ohmic contact (KV12).

[1431] Feature 129. A nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 128, [1432] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Diamond-Based Nucleus (Spin) Quantum Bit (CQUB) 130-202

[1433] Feature 130. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 129, [1434] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material.

[1435] Feature 131. Diamond Nuclear quantum bit (CQUB) Feature 130 [1436] wherein the substrate (D) and/or epitaxial layer (DEP1) comprises a diamond material having a NV center in the diamond material or another paramagnetic impurity center the diamond material as a quantum dot (NV).

[1437] Feature 132. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 131, [1438] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material and a quantum dot (NV) in the diamond material, and [1439] wherein a quantum dot (NV) is a SiV center.

[1440] Feature 133. A diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 132, [1441] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material and a quantum dot (NV) in the diamond material, and [1442] wherein the quantum dot (NV) comprises a vacancy.

[1443] Feature 134. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 133, [1444] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material and a quantum dot (NV) in the diamond material, and [1445] wherein the quantum dot (NV) comprises a Si atom or a Ge atom or a N atom or a P atom or an As atom or a Sb atom or a Bi atom or a Sn atom or a Mn atom or an F atom or any other atom that generates an impurity center with a paramagnetic behavior in the diamond material.

[1446] Feature 135. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 134, [1447] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and a nuclear quantum dot (CI) in the diamond material is the nucleus of a .sup.13C isotope or a .sup.29Si isotope or a .sup.14N isotope or a .sup.15N isotope or another atom whose nucleus has a magnetic moment.

[1448] Feature 136. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 135, [1449] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material and a nuclear quantum dot (CI) is the nucleus of a .sup.14N isotope or a .sup.15N isotope of the nitrogen atom of a NV center in the diamond material.

[1450] Feature 137. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 136, [1451] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and [1452] wherein the nuclear quantum dot (CI) is the nucleus of a .sup.13C isotope, and [1453] wherein in the diamond material a NV center or a ST1 center or a L2 center or another paramagnetic center is located near the .sup.13C isotope. [1454] wherein proximity here is understood to mean that the magnetic field of the nuclear spin of the .sup.13C isotope can affect the spin of the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center, and that the spin of the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center can affect the nuclear spin of the .sup.13C isotope.

[1455] Feature 138. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 137, [1456] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and [1457] wherein the nuclear quantum dot (CI) is an isotope with a nuclear spin in the diamond material, and [1458] wherein in the diamond material a NV center or a ST1 center or a L2 center or other paramagnetic center is located near the isotope with the nuclear spin, [1459] wherein proximity here is to be understood as the magnetic field of the isotope's nuclear spin can affect the spin of the NV center's electron configuration, and the spin of the NV center's electron configuration or the ST1 center or the L2 center or the other paramagnetic center can affect the isotope's nuclear spin.

[1460] Feature 139. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 138, [1461] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and [1462] wherein the nuclear quantum dot (CI) is an isotope with a nuclear spin in the diamond material, and [1463] wherein at least one other nuclear quantum dot (CI′) is an isotope having a nuclear spin in the diamond material, and [1464] wherein in the diamond material, an NV center or an ST1 center or an L2 center or other paramagnetic center is located in the vicinity of the nuclear quantum dot (CI); and [1465] wherein the NV center or the ST1 center or the L2 center or the other paramagnetic center is located near the at least one, further nuclear quantum dot (CI′) in the diamond material, [1466] wherein proximity here is to be understood in this way, [1467] that the magnetic field of the nuclear quantum dot (CI) can influence the spin of the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center, respectively; and [1468] that the magnetic field of the at least one, further nuclear quantum dot (CI′) can influence the spin of the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center, and [1469] that the spin of the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center can influence the nuclear spin of the nuclear quantum dot (CI), and [1470] that the spin of the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center can influence the nuclear spin of the at least one, further nuclear quantum dot (Cr).

[1471] Feature 140. Diamond nuclear quantum bit (CQUB) according to feature 139, [1472] wherein the coupling strength between a nuclear quantum bit (CI, CI′) and the electron configuration of the NV center or the ST1 center or the L2 center or the other paramagnetic center is in a range of 1 kHz to 200 GHz and/or 10 kHz to 20 GHz and/or 100 kHz to 2 GHz and/or 0.2 MHz to 1 GHz and/or 0.5 MHz to 100 MHz and/or 1 MHz to 50 MHz, in particular preferably 10 MHz.

[1473] Feature 141. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 140, [1474] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and [1475] wherein the diamond material has an epitaxially grown, essentially isotopically pure layer (DEP1) containing .sup.12C isotopes.

[1476] Feature 142. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 141, [1477] wherein the substrate (D) and/or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the nuclear quantum dot (CI).

[1478] Feature 143. A diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 142, [1479] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and [1480] wherein the substrate (D) and/or the epitaxial layer (DEP1) is doped with sulfur in the region of the nuclear quantum dot (CI).

[1481] Feature 144. Diamond nuclear quantum bit (CQUB) according to one or more of features 130 to 143, [1482] wherein the substrate (D) and/or the epitaxial layer (DEP1) is doped with nuclear spin-free sulfur in the region of the nuclear quantum dot (CI).

[1483] Feature 145. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 144, [1484] wherein the substrate (D) and/or the epitaxial layer (DEP1) is essentially doped with .sup.32S isotopes in the region of the nuclear quantum dot (CI).

[1485] Feature 146. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 145, [1486] wherein the substrate (D) and/or the epitaxial layer (DEP1) in the region of the nuclear quantum dot (CI) is essentially doped with isotopes having no nucleus magnetic moment.

[1487] Feature 147. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 146, [1488] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a diamond material, and [1489] wherein the diamond material comprises essentially carbon isotopes having no nucleus magnetic moment it and/or [1490] wherein the diamond material comprises essentially only .sup.12C isotopes and/or .sup.14C carbon isotopes with no nucleus magnetic moment μ and/or [1491] wherein the diamond material essentially comprises only .sup.12C isotopes with no nucleus magnetic moment μ.

[1492] Feature 148. Diamond nuclear quantum bit (CQUB) according to one or more of the preceding features 130 to 147, [1493] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Silicon-Based Nucleus (Spin) Quantum Bit (CQUB) 130-166

[1494] Feature 149. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 129, [1495] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal.

[1496] Feature 150. Silicon-nuclear quantum bit (CQUB) according to feature 149, [1497] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, having a G center in the silicon material or another paramagnetic impurity center in the silicon material as a quantum dot (NV).

[1498] Feature 151. Silicon-nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 150, [1499] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and a quantum dot (NV) in the silicon material, and [1500] where the quantum dot (NV) comprises a vacancy in the silicon material.

[1501] Feature 152. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 151, [1502] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and a quantum dot (NV) in the silicon material, and [1503] wherein the quantum dot (NV) comprises a C isotope or a Ge isotope or an N isotope or a P isotope or an As isotope or an Sb isotope or a Bi isotope or a Sn isotope or an Mn isotope or an F isotope or any other isotope that generates an impurity center with a paramagnetic behavior in the silicon material.

[1504] Feature 153. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 152, [1505] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1506] where a nuclear quantum dot (CI) in the silicon material is the nucleus of a .sup.29Si isotope or other atom whose nucleus has a nonzero nucleus magnetic moment μ.

[1507] Feature 154. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 153, [1508] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1509] wherein a nuclear quantum dot (CI) in the silicon material is the nucleus of a .sup.29Si isotope or other atom whose nucleus has a nonzero nucleus magnetic moment μ, and [1510] wherein the .sup.29Si isotope or the other isotope having a non-zero nucleus magnetic moment μ is located immediately adjacent within coupling range to a G center in the silicon material or a paramagnetic impurity center, respectively, and [1511] whereby the G-center or the paramagnetic perturbation center is a quantum dot (NV) in the sense of this writing.

[1512] Feature 155. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 154, [1513] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and a nuclear quantum dot (CI) is the nucleus of a .sup.13C isotope or a .sup.29Si isotope of a G center in the silicon material.

[1514] Feature 156. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 155, [1515] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1516] wherein the nuclear quantum dot (CI) is the nucleus of a .sup.29Si isotope, and [1517] in which silicon material a G center or other paramagnetic center is located as a quantum dot (NV) near the .sup.29Si isotope, [1518] wherein proximity here is understood to mean that the magnetic field of the nuclear spin of the .sup.29Si isotope can affect the spin of the electron configuration of the G center or the other paramagnetic center, and that the spin of the electron configuration of the G center or the other paramagnetic center can affect the nuclear spin of the .sup.29Si isotope.

[1519] Feature 137. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 156, [1520] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1521] wherein the nuclear quantum dot (CI) is an isotope with a nonzero nucleus magnetic moment μ in the silicon material, and [1522] wherein silicon material a G center or another paramagnetic center, in particular as a quantum dot (NV), is located near the isotope with nucleus magnetic moment μ. [1523] wherein proximity here is to be understood as meaning that the nucleus magnetic moment μ of the nuclear spin of the isotope can influence the spin of the electron configuration of the G center or the other paramagnetic center, and that the spin of the electron configuration of the G center or the other paramagnetic center can influence the nuclear spin of the isotope.

[1524] Feature 158. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 157, [1525] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1526] wherein the nuclear quantum dot (CI) is an isotope with a nuclear spin in the silicon material, and [1527] wherein at least one other nuclear quantum dot (CI′) is an isotope having a nuclear spin in the silicon material, and [1528] wherein a G center or other paramagnetic center is located in the silicon material in the vicinity of the nuclear quantum dot (CI); and [1529] wherein the G center or the other paramagnetic center is located in the vicinity of the at least one, further nuclear quantum dot (CI′) in the silicon material, [1530] wherein proximity hertz is to be understood in this way, [1531] that the magnetic field of the nuclear quantum dot (CI) can influence the spin of the electron configuration of the G center or the other paramagnetic center, and [1532] that the magnetic field of the at least one, further nuclear quantum dot (CI′) can influence the spin of the electron configuration of the G center or the other paramagnetic center, and [1533] that the spin of the electron configuration of the G center or the other paramagnetic center can influence the nuclear spin of the nuclear quantum dot (CI), and [1534] that the spin of the electron configuration of the G center or the other paramagnetic center can influence the nuclear spin of the at least one, further nuclear quantum dot (CI′).

[1535] Feature 159. Silicon-nuclear quantum bit (CQUB) according to feature 159, [1536] wherein the coupling strength between a nuclear quantum bit (CI, CI′) and the electron configuration of the G center or the other paramagnetic center is in a range from 1 kHz to 200 GHz and/or 10 kHz to 20 GHz and/or 100 kHz to 2 GHz and/or 0.2 MHz to 1 GHz and/or 0.5 MHz to 100 MHz and/or 1 MHz to 50 MHz, in particular preferably 10 MHz.

[1537] Feature 160. Silicon-nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 159. [1538] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1539] wherein the silicon material comprises an epitaxially grown layer (DEP1) having essentially .sup.28Si isotopes and/or .sup.30Si isotopes.

[1540] Feature 161. Silicon-nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 160, [1541] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1542] wherein the silicon material comprises an essentially isotopically pure epitaxially grown layer (DEP1) essentially of .sup.28Si isotopes.

[1543] Feature 162. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 161, [1544] wherein the substrate (D) and/or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the nuclear quantum dot (CI).

[1545] Feature 163. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 142, [1546] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1547] wherein the substrate (D) or the epitaxial layer (DEP1) is doped in the region of the nuclear quantum dot (CI) with one or more of the following isotopes, namely [1548] for n-doping with .sup.20Te, .sup.122Te, .sup.124Te, .sup.126Te, .sup.128Te, .sup.130Te, .sup.46Ti, .sup.48Ti, .sup.50Ti, .sup.12C, .sup.14C, .sup.74Se, .sup.76Se, .sup.78Se, .sup.80Se, .sup.130Ba, .sup.132Ba, .sup.134Ba, .sup.136Ba, .sup.138Ba, .sup.32S, .sup.34S, and .sup.36S or [1549] for p-doping with .sup.10Be, .sup.102Pd, .sup.104Pd, .sup.106Pd, .sup.108Pd, .sup.110Pd, .sup.204Tl.

[1550] Feature 164. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 163. [1551] wherein the substrate (D) and/or the epitaxial layer (DEP1) in the region of the nuclear quantum dot (CI) is essentially doped with isotopes having no nucleus magnetic moment.

[1552] Feature 165. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 164, [1553] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon material, in particular a silicon crystal, and [1554] wherein the silicon material comprises essentially silicon isotopes having no nucleus magnetic moment μ and/or [1555] wherein the silicon material comprises essentially only .sup.28Si isotopes and/or .sup.30Si silicon isotopes without nucleus magnetic moment μ and/or [1556] where the silicon material essentially comprises only .sup.28Si isotopes with no nucleus magnetic moment μ.

[1557] Feature 166. Silicon nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 165, [1558] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Silicon Carbide-Based Nucleus (Spin) Quantum Bit (CQUB) 167-184

[1559] Feature 167. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 129, [1560] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal.

[1561] Feature 168. Silicon carbide-nuclear quantum bit (CQUB) according to feature 167, [1562] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, having a V.sub.Si center and/or having a DV center and/or having a V.sub.CV.sub.SI center and/or having a CAV.sub.SI center and/or having a N.sub.CV.sub.SI center in the silicon carbide material or another paramagnetic impurity center in the silicon carbide material as a quantum dot (NV).

[1563] Feature 169. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 168, [1564] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and a quantum dot (NV) in the silicon carbide material, and [1565] wherein the quantum dot (NV) comprises a vacancy in the silicon carbide material.

[1566] Feature 170. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 169, [1567] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon crystal, and a quantum dot (NV) in the silicon carbide material, and [1568] wherein the quantum dot (NV) comprises a vacancy or a C atom at a non-C position or a Si atom at a non-Si position or a Ge atom or a N atom or a P atom or an As atom or a Sb atom or a Bi atom or a Sn atom or a Mn atom or a F atom or any other atom which generates a paramagnetic impurity center in silicon carbide.

[1569] Feature 171. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 170, [1570] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1571] wherein a nuclear quantum dot (CI) in the silicon carbide material is the nucleus of a .sup.13C isotope or the nucleus of a .sup.29Si isotope or other atom whose nucleus has a nonzero nucleus magnetic moment μ.

[1572] Feature 172. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 171, [1573] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1574] wherein a nuclear quantum dot (CI) in the silicon carbide material is the nucleus of a .sup.13C isotope or the nucleus of a .sup.29Si isotope or another atom whose nucleus has a non-zero nucleus magnetic moment μ, and [1575] wherein the .sup.13C isotope or the .sup.29Si isotope or the other isotope having a non zero nucleus magnetic moment μ in is located immediately adjacent within coupling range to a V.sub.Si center and/or a DV center and/or a V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center in the silicon carbide material or a paramagnetic impurity center, respectively, and [1576] wherein the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the paramagnetic impurity center, respectively, is a quantum dot (NV) in the sense of this writing.

[1577] Feature 173. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 172, [1578] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and a nuclear quantum dot (CI) is the nucleus of a .sup.13C isotope or a .sup.29Si isotope of a N.sub.CV.sub.SI center or a DV center or a V.sub.CV.sub.SI center or a CAV.sub.Si center, respectively, in the silicon carbide material.

[1579] Feature 174. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 173, [1580] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and a nuclear quantum dot (CI) is the nucleus of a .sup.13C isotope or a .sup.29Si isotope or a .sup.14N isotope or a .sup.15N isotope of an N.sub.CV.sub.SI center in the silicon carbide material.

[1581] Feature 175. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 149 to 174, [1582] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1583] wherein the nuclear quantum dot (CI) is the nucleus of a .sup.29Si isotope or a .sup.13C isotope, and [1584] wherein in the silicon material a V.sub.Si center or a DV center or a the V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center or another paramagnetic center is located as a quantum dot (NV) in the vicinity of the .sup.29Si isotope or the .sup.13C isotope, [1585] wherein proximity is to be understood here in such a way that the magnetic field of the nuclear spin of the .sup.29Si isotope or the .sup.13C isotope can influence the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, respectively, of the other paramagnetic center, respectively, and that the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, respectively, can influence the nuclear spin of the .sup.29Si isotope or the .sup.13C isotope, respectively.

[1586] Feature 176. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 175, [1587] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1588] wherein the nuclear quantum dot (CI) is an isotope with a nonzero nucleus magnetic moment μ in the silicon carbide material, and [1589] wherein in the silicon carbide material a V.sub.Si center or a DV center or a the V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center or another paramagnetic center, in particular as a quantum dot (NV), is located in the vicinity of the isotope with the nucleus magnetic moment μ. [1590] wherein proximity is to be understood here in such a way that the nucleus magnetic moment μ of the nuclear spin of the isotope can influence the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, respectively of the other paramagnetic center, respectively, and that the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, respectively, can influence the nuclear spin of the isotope.

[1591] Feature 177. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 176 [1592] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1593] wherein the nuclear quantum dot (CI) is an isotope with a nuclear spin in the silicon carbide material, and [1594] wherein at least one other nuclear quantum dot (CI′) is an isotope having a nuclear spin in the silicon carbide material, and [1595] wherein in the silicon material a V.sub.Si center or a DV center or a V.sub.CV.sub.SI center or a CAV.sub.Si center or a N.sub.CV.sub.SI center or another paramagnetic center is located in the vicinity of the nuclear quantum dot (CI), and [1596] wherein the Vs center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center is located in the vicinity of the at least one, further nuclear quantum dot (CI′) in the silicon carbide material, [1597] wherein proximity here is to be understood in this way, [1598] that the magnetic field of the nuclear quantum dot (CI) can influence the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, and [1599] that the magnetic field of the at least one, further nuclear quantum dot (CI′) can influence the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, and [1600] that the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center can influence the nuclear spin of the nuclear quantum dot (CI), and [1601] that the spin of the electron configuration of the V.sub.Si center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or the other paramagnetic center, respectively, can influence the nuclear spin of the at least one, further nuclear quantum dot (CI′).

[1602] Feature 178. Silicon carbide-nuclear quantum bit (CQUB) according to feature 177 [1603] wherein the coupling strength between a nuclear quantum bit (CI, CI′) and the electron configuration of the Vsi center or the DV center or the V.sub.CV.sub.SI center or the CAV.sub.Si center or the N.sub.CV.sub.SI center or of the other paramagnetic center lies in a range from 1 kHz to 200 GHz and/or 10 kHz to 20 GHz and/or 100 kHz to 2 GHz and/or 0.2 MHz to 1 GHz and/or 0.5 MHz to 100 MHz and/or 1 MHz to 50 MHz, in particular preferably 10 MHz.

[1604] Feature 179. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 178, [1605] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1606] wherein the silicon carbide material comprises an epitaxially grown layer (DEP1) having essentially .sup.28Si isotopes and/or .sup.30Si isotopes and essentially .sup.12C isotopes and/or .sup.14C isotopes.

[1607] Feature 180. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 179, [1608] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1609] wherein the silicon carbide material comprises an essentially isotopically pure epitaxially grown layer (DEP1) essentially of .sup.28Si isotopes and .sup.12C isotopes.

[1610] Feature 181. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 180, [1611] wherein the substrate (D) and/or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the nuclear quantum dot (CI).

[1612] Feature 182. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 181, [1613] wherein the substrate (D) and/or the epitaxial layer (DEP1) in the region of the nuclear quantum dot (CI) is essentially doped with isotopes having no nucleus magnetic moment.

[1614] Feature 183. A silicon carbide nuclear quantum bit (CQUB) according to any one or more of the preceding features 167 to 182. [1615] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a silicon carbide material, in particular a silicon carbide crystal, and [1616] wherein the silicon carbide material comprises essentially silicon isotopes or carbon without a nucleus magnetic moment μ, and/or [1617] wherein the silicon carbide material comprises essentially only .sup.28Si isotopes and/or .sup.30Si silicon isotopes having no nucleus magnetic moment μ and/or [1618] wherein the silicon carbide material comprises essentially only .sup.12C isotopes and/or .sup.14C silicon isotopes having no nucleus magnetic moment μ and/or [1619] wherein the silicon material comprises essentially only .sup.28Si isotopes having no nucleus magnetic moment μ and essentially only .sup.12C isotopes having no nucleus magnetic moment μ.

[1620] Feature 184. Silicon carbide nuclear quantum bit (CQUB) according to one or more of the preceding features 167 to 183, [1621] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

Solid Mix Crystal Based Nucleus (Spin) Quantum Bit (CQUB) 185-202

[1622] Feature 185. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 103 to 129, [1623] whereas the mixed crystal comprising, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, essentially one element of main group IV of the periodic table, i.e., being only a crystal without mixture with other elements, or [1624] whereby, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, the mixed crystal essentially comprises atoms of several different elements of the IV main group of the periodic table.

[1625] Feature 186. Mixed crystal based nuclear quantum bit (CQUB) by feature 185, [1626] wherein the mixed crystal essentially comprising, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, atoms of two different elements of main group IV of the periodic table, or [1627] wherein, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, the mixed crystal essentially comprises atoms of three different elements of main group IV of the periodic table, or [1628] wherein the mixed crystal essentially comprising, apart from quantum dots (NV) and nuclear quantum dots (CI) and dopants, atoms of four different elements of the IV.sup.th main group of the periodic table.

[1629] Feature 187. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 186 and according to feature 185, [1630] wherein the substrate (D) or epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1631] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a paramagnetic impurity center in the mixed crystal as a quantum dot (NV).

[1632] Feature 188. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 186 and according to feature 185, [1633] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal and a quantum dot (NV) in the mixed crystal, and [1634] wherein the quantum dot (NV) comprises a vacancy in the mixed crystal.

[1635] Feature 189. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 183 to 188 and according to feature 185, [1636] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185 and a quantum dot (NV) in the mixed crystal, and [1637] wherein the quantum dot (NV) comprises a vacancy or a C atom at a non-C position or a Si atom at a non-Si position or a Ge atom or a N atom or a P atom or an As atom or a Sb atom or a Bi atom or a Sn atom or a Mn atom or a F atom or any other atom that generates a paramagnetic impurity center in silicon carbide.

[1638] Feature 190. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 189 and according to feature 185, [1639] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1640] wherein a nuclear quantum dot (CI) in the mixed crystal is one or more isotopes of the isotopes .sup.13C, .sup.29Si, .sup.73Ge, .sup.115Sn, .sup.117Sn, .sup.119Sn, .sup.207Pb and/or one or more isotopes of the isotopes WITH a non-zero nucleus magnetic moment μ.

[1641] Feature 191. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 190 and according to feature 185, [1642] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1643] wherein a nuclear quantum dot (CI) in the mixed crystal is the nucleus of a .sup.13C isotope or the nucleus of a .sup.29Si isotope and/or a .sup.73Ge isotope and/or a .sup.115Sn isotope and/or a .sup.117Sn isotope and/or a .sup.119Sn isotope and/or a .sup.207Pb isotope or another isotope whose nucleus has a non-zero nucleus magnetic moment μ, and [1644] wherein said nucleus with a non-zero nucleus magnetic moment μ is located in immediately adjacent coupling range to a paramagnetic impurity center in the mixed crystal, and [1645] whereby the paramagnetic perturbation center is a quantum dot (NV) for the purposes of this writing.

[1646] Feature 192. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 191 and according to feature 185, [1647] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1648] wherein a nuclear quantum dot (CI) is the atomic nucleus isotope with a nonzero nucleus magnetic moment μ that is part of a paramagnetic center of a quantum dot (N) in the mixed crystal.

[1649] Feature 193. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 192 and according to feature 185, [1650] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1651] wherein a nuclear quantum dot (CI) is the atomic nucleus isotope with a nonzero nucleus magnetic moment μ in the mixed crystal.

[1652] Feature 194. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 193 and according to feature 185, [1653] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1654] wherein the nuclear quantum dot (CI) is the nucleus of an isotope having a non-zero nucleus magnetic moment μ in the mixed crystal, and [1655] wherein in the mixed crystal a paramagnetic center is arranged as a quantum dot (NV) near the atomic nucleus, [1656] wherein proximity here is to be understood as the magnetic field of the nuclear spin of the nucleus can influence the spin of the electron configuration of the paramagnetic center, and the spin of the electron configuration of the paramagnetic center can influence the nuclear spin of the nucleus.

[1657] Feature 195. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 194 and according to feature 185, [1658] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1659] wherein the nuclear quantum dot (CI) is an isotope having a non-zero nucleus magnetic moment in the mixed crystal, and [1660] wherein in the mixed crystal a paramagnetic center, in particular as a quantum dot (NV), is located near the isotope with nucleus magnetic moment μ, [1661] where proximity here is to be understood as the nucleus magnetic moment μ of the nuclear spin of the isotope can influence the spin of the electron configuration of the paramagnetic center and the spin of the electron configuration of the paramagnetic center can influence the nuclear spin of the isotope.

[1662] Feature 196. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 195 and according to feature 185, [1663] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1664] wherein the nuclear quantum dot (CI) is an isotope having a nuclear spin in the mixed crystal, and [1665] wherein at least one other nuclear quantum dot (CI′) is an isotope having a nuclear spin in the mixed crystal, and [1666] wherein in the mixed crystal a paramagnetic center is located near the nuclear quantum dot (CI), and [1667] wherein the paramagnetic center is located near the at least one, further nuclear quantum dot (CI′) in the mixed crystal. [1668] wherein proximity here is to be understood in this way, [1669] that the magnetic field of the nuclear quantum dot (CI) can influence the spin of the electron configuration of the paramagnetic center, and [1670] that the magnetic field of the at least one, further nuclear quantum dot (CI′) can influence the spin of the electron configuration of the paramagnetic center, and [1671] that the spin of the electron configuration of the paramagnetic center can influence the nuclear spin of the nuclear quantum dot (CI), and that the spin of the electron configuration of the paramagnetic center can influence the nuclear spin of the at least one, further nuclear quantum dot (CI′).

[1672] Feature 197. Mixed crystal based nuclear quantum bit (CQUB) according to feature 196, [1673] wherein the coupling strength between a nuclear quantum bit (CI, CI′) and the electron configuration of the paramagnetic center is in a range from 1 kHz to 200 GHz and/or 10 kHz to 20 GHz and/or 100 kHz to 2 GHz and/or 0.2 MHz to 1 GHz and/or 0.5 MHz to 100 MHz and/or 1 MHz to 50 MHz, in particular preferably 10 MHz.

[1674] Feature 198. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 197 and according to feature 185, [1675] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1676] wherein the silicon carbide material comprises an epitaxially grown layer (DEP1) essentially comprising isotopes of the IV.sup.th main group without magnetic moment and/or essentially comprising one or more isotopes of the following list: .sup.28Si, .sup.30Si, .sup.12C, .sup.14C, .sup.70Ge, .sup.72Ge, .sup.74Ge, .sup.76Ge, .sup.112Sn, .sup.114Sn, .sup.116Sn, .sup.118Sn, .sup.120Sn, .sup.122Sn, .sup.124Sn.

[1677] Feature 199. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 198 and according to feature 185, [1678] wherein the substrate (D) and/or the epitaxial layer (DEP1) comprises a mixed crystal according to feature 185, and [1679] wherein the mixed crystal comprises an essentially isotopically pure epitaxially grown layer (DEP1) of essentially .sup.28Si isotopes and/or .sup.12C isotopes and/or .sup.70Ge isotopes and/or .sup.72Ge isotopes and/or .sup.74Ge isotopes and/or .sup.116Sn isotopes and/or .sup.118Sn isotopes and/or .sup.120Sn isotopes, the term isotopically pure referring only to the atoms of the respective element of the mixture of elements forming the mixed crystal.

[1680] Feature 200. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 199 and according to feature 185, [1681] wherein the substrate (D) and/or the epitaxial layer (DEP1) is doped, in particular n-doped, in the region of the nuclear quantum dot (CI).

[1682] Feature 201. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 200 according to feature 185, [1683] whereby the substrate (D) and/or the epitaxial layer (DEP1) in the region of the nuclear quantum dot (CI) is essentially doped with isotopes having no nucleus magnetic moment.

[1684] Feature 202. A mixed crystal based nuclear quantum bit (CQUB) according to one or more of the preceding features 185 to 201 and according to feature 185, [1685] wherein a resistive contact (KV11, KV12, KH11, KH12) and in particular its metallization comprises titanium.

[1686] Register Constructions 203-215

Nucleus-Electron Quantum Register (CEQUREG) 203-215

[1687] Feature 203. Nucleus-electron quantum register (CEQUREG). [1688] comprising a nuclear quantum bit (CQUB) according to one or more of features 103 to 202 and [1689] comprising a quantum bit (QUB) according to one or more of the features 1 to 102 and [1690] wherein the substrate (D) or epitaxial layer (DEP1) of the nuclear quantum bit (CQUB) and the quantum bit (QUB) are the same.

[1691] Feature 204. Nucleus-electron quantum register (CEQUREG) according to feature 203, [1692] wherein the device for controlling a nuclear quantum dot (CI) nuclear quantum bit (CQUB) comprises a sub-device (LH, LV) which is also a sub-device (LH, LV) of the device for controlling a quantum dot (NV) of the quantum bit (QUB).

[1693] Feature 205. Nucleus-electron quantum register (CEQUREG) according to one or more of features 203 to 204, [1694] comprising a device for controlling the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) and for simultaneously controlling the quantum dot (NV) of the quantum bit (QUB), [1695] with a common substrate (D) of the nuclear quantum bit (CQUB) and the quantum bit (QUB), and [1696] if necessary, with a common epitaxial layer (DEP1) of the nuclear quantum bit (CQUB) and the quantum bit (QUB), and [1697] with a common device of the nuclear quantum bit (CQUB) and the quantum bit (QUB), [1698] suitable for generating an electromagnetic wave field (nay, maw) at the location of the nuclear quantum dot (CI) and at the location of the quantum dot (CI), [1699] wherein the common epitaxial layer (DEN), if present, is deposited on the common substrate (D), and [1700] wherein the common substrate (D) and/or the common epitaxial layer (DEP1), if present, has a surface (OF) and [1701] wherein the nuclear quantum dot (CI) has a magnetic moment, and [1702] wherein the quantum dot (NV) is a paramagnetic center in the common substrate (D) and/or in the common epitaxial layer (DEP1), if present, and [1703] wherein the common device suitable for generating an electromagnetic wave field (B.sub.RW, B.sub.MW) is located on the surface of the common substrate (D) and/or the common epitaxial layer (DEP1), if present, and

[1704] Feature 206. Nucleus-electron quantum register (CEQUREG) according to one or more of features 203 to 205, [1705] wherein the common device suitable for generating an electromagnetic wave field (B.sub.RW, B.sub.MW) is firmly connected to the surface (OF) of the common substrate (D) and/or the common epitaxial layer (DEP1), if present, directly or indirectly via one or more insulations (IS, IS2).

[1706] Feature 207. Nucleus-electron quantum register (CEQUREG) according to one or more of features 203 to 206, [1707] wherein the device suitable for generating a circularly polarized electromagnetic wave field (B.sub.RW, B.sub.MW) is suitable for generating a circularly polarized electromagnetic wave field (B.sub.RW, B.sub.MW).

[1708] Feature 208. Nucleus-electron quantum register (CEQUREG) according to one or more of features 203 to 205, [1709] wherein a solder can be precipitated along a perpendicular line (LOT) from the location of the nuclear quantum dot (CI) and/or from the location of the quantum dot (NV) to the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, and [1710] wherein the perpendicular line (LOT) pierces the surface (OF) of the substrate (D) and/or the epitaxial layer (DEP1), if present, at a perpendicular point (LOTP), and [1711] wherein the device used to generate a circularly polarized radio wave field is located near the plumb point (LOTP) or at the plumb point (LOTP).

[1712] Feature 209. Nucleus-electron quantum register (CEQUREG) according to one or more of features 205 to 208, [1713] with a horizontal line (LH) and [1714] with a vertical line (LV), [1715] where the horizontal line (LH) and the vertical line (LV) are located on the surface of the substrate (D) and/or the epitaxial layer (DEP1), if present.

[1716] Feature 210. Nucleus-electron quantum register (CEQUREG) according to feature 209, [1717] wherein the horizontal line (LH) and the vertical line (LV) cross near the plumb point (LOTP) or at the plumb point (LOTP) at a non-zero crossing angle (α).

[1718] Feature 211. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 210, [1719] wherein the horizontal line (LH) is electrically isolated from the vertical line (LV).

[1720] Feature 212. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 211, [1721] wherein the horizontal line (LH) is electrically isolated from the vertical line (LV) by means of electrical insulation (IS).

[1722] Feature 213. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 212, [1723] wherein the horizontal line (LH) and/or the vertical line (LV) is transparent to green light, and [1724] wherein in particular the horizontal line (LH) and/or the vertical line (LV) is made of an electrically conductive material that is optically transparent to green light, in particular of indium tin oxide (common abbreviation ITO).

[1725] Feature 214. Nucleus-electron quantum register (CEQUREG) according to one or more of features 210 to 213, [1726] wherein an angle (α) is essentially a right angle.

[1727] Feature 215. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 214, [1728] wherein the substrate (D) comprises diamond [1729] wherein the nuclear quantum dot (CI) is the nucleus of a .sup.13C isotope, and [1730] wherein the quantum dot (NV) is located near the .sup.13C isotope, and [1731] wherein the quantum dot (NV) is in particular an NV center or another paramagnetic impurity center, and [1732] wherein proximity here is to be understood as the magnetic field of the nuclear spin of the .sup.13C isotope can influence the spin of an electron configuration of the quantum dot (NV), in particular via a dipole-dipole interaction, and the spin of an electron configuration of the quantum dot (NV) can influence the nuclear spin of the .sup.13C isotope, in particular via a dipole-dipole interaction.

[1733] Feature 216. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 214, [1734] wherein the substrate (D) comprises a silicon material, in particular a silicon crystal [1735] wherein the nuclear quantum dot (CI) is the nucleus of a .sup.29Si isotope, and [1736] wherein the quantum dot (NV) is located near the .sup.29Si isotope, and [1737] wherein the quantum dot (NV) is in particular a G-center or other paramagnetic perturbation center, and [1738] wherein proximity here is to be understood as the magnetic field of the nuclear spin of the .sup.29Si isotope can influence the spin of an electron configuration of the quantum dot (NV), in particular via a dipole-dipole interaction, and that the spin of an electron configuration of the quantum dot (NV) can influence the nuclear spin of the .sup.29Si isotope, in particular via a dipole-dipole interaction.

[1739] Feature 217. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 214, [1740] wherein the substrate (D) comprises a silicon carbide material, in particular a silicon carbide crystal [1741] wherein the nuclear quantum dot (CI) is the nucleus of a .sup.29Si isotope or the nucleus of a .sup.13C isotope; and [1742] wherein the quantum dot (NV) is located near the .sup.29Si isotope or the .sup.13C isotope, and [1743] wherein the quantum dot (NV) is in particular a V.sub.Si center and/or a DV center and/or a V.sub.CV.sub.SI center and/or a CAV.sub.Si center and/or a N.sub.CV.sub.SI center in the silicon carbide material or another paramagnetic impurity center in the silicon carbide material, and [1744] wherein proximity here is to be understood as meaning that the magnetic field of the nuclear spin of the .sup.29Si isotope or the IT isotope can influence the spin of an electron configuration of the quantum dot (NV), in particular via a dipole-dipole interaction, and that the spin of an electron configuration of the quantum dot (NV) can influence the nuclear spin of the .sup.29Si isotope, or the .sup.13C isotope, in particular via a dipole-dipole interaction.

[1745] Feature 218. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 214, [1746] wherein the substrate (D) comprises a mixed crystal essentially comprising one or more elements of the IV, main group of the periodic table [1747] wherein the nuclear quantum dot (CI) is the nucleus of an element of main group IV of the periodic table with nonzero nucleus magnetic moment μ, and [1748] whereby the quantum dot (NV) is located near this atomic nucleus, and [1749] wherein the quantum dot (NV) is in particular a paramagnetic impurity center in the mixed crystal, and [1750] wherein proximity here is to be understood as meaning that the magnetic field of the nuclear spin of the atomic nucleus can influence the spin of an electron configuration of the quantum dot (NV), in particular via a dipole-dipole interaction, and that the spin of an electron configuration of the quantum dot (NV) can influence the nuclear spin of the atomic nucleus via a dipole-dipole interaction.

[1751] Feature 219. Nucleus-electron quantum register (CEQUREG) according to one or more of features 209 to 218, [1752] wherein the quantum dot (NV) is a paramagnetic center with a charge carrier or charge carrier configuration and is located in the vicinity of the nuclear quantum dot (CI), and [1753] wherein the charge carrier or charge carrier configuration has a charge carrier spin state; and [1754] wherein the nuclear quantum dot (CI) has a nuclear spin state and [1755] wherein proximity here is to be understood in this way, [1756] that the nuclear spin state can influence the charge carrier spin state and/or [1757] that the charge carrier spin state can influence the nuclear spin state and/or [1758] that the frequency range of the coupling strength is at least 1 kHz and/or at least 1 MHz and less than 20 MHz and/or. [1759] in that the frequency range of the coupling strength is 1 kHz to 200 GHz and/or 10 kHz to 20 GHz and/or 100 kHz to 2 GHz and/or 0.2 MHz to 1 GHz and/or 0.5 MHz to 100 MHz and/or 1 MHz to 50 MHz, in particular preferably 10 MHz.

Quantum Alu (QUALU) 220-221

[1760] Feature 220. Quantum ALU (QUALU) [1761] comprising a first nuclear quantum bit (CQUB1) according to one or more of features 103 to 202 and [1762] comprising at least one second nuclear quantum bit (CQUB2) according to one or more of features 103 to 202 and [1763] comprising a quantum bit (QUB) according to one or more of the features 1 to 102, [1764] wherein the first nuclear quantum bit (CQUB1) forms with the quantum bit (QUB) a first nucleus-electron quantum register (CEQUREG1) according to one or more of features 203 to 215 and [1765] wherein the second nuclear quantum bit (CQUB2) forms with the quantum bit (QUB) a second nucleus-electron quantum register (CEQUREG2) according to one or more of features 203 to 215.

[1766] Feature 221. Quantum ALU (QUALU) according to feature 220, [1767] wherein the device for controlling the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of the first nucleus-electron quantum register (CEQUREG1) comprises a sub-device (LH, LV) which is also the sub-device (LH, LV) of the device for controlling the quantum dot (NV) of the quantum bit (QUB) of the first nucleus-electron quantum register (CEQUREG1), and [1768] wherein the-device for controlling the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) of the second nucleus-electron quantum register (CEQUREG2) comprises the sub-device (LH, LV) which is also the sub-device (LH, LV) of the device for controlling the quantum dot (NV) of the quantum bit (QUB) of the second nucleus-electron quantum register (CEQUREG2), and [1769] wherein the device for controlling the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) of the second nucleus-electron quantum register (CEQUREG2) comprises the sub-device (LH, LV) which is also the sub-device (LH, LV) of the device of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of the first nucleus-electron quantum register (CEQUREG1).

Electron-A1-Electron-A2-Quantum Register (QUREG) 222-240

[1770] Feature 222. Quantum Register (QUREG) [1771] with a first quantum bit (QUB1) according to one or more of the preceding features 1 to 102 and [1772] with at least one second quantum bit (QUB2) according to one or more of the preceding features 1 to 102, [1773] wherein the first quantum dot type of the first quantum dot (NV1) of the first quantum bit (QUB1) is equal to the second quantum dot type of the second quantum dot (NV2) of the second quantum bit (QUB2).

[1774] Feature 223. Quantum register (QUREG) according to the previous feature [1775] wherein the substrate (D) or epitaxial layer (DEP1) is common to the first quantum bit (QUB1) and the second quantum bit (QUB2); and [1776] wherein the quantum dot (NV) of the first quantum bit (QUB1) is the first quantum dot (NV1), and [1777] wherein the quantum dot (NV) of the second quantum bit (QUB2) is the second quantum dot (QUB2) and [1778] whereby the horizontal line (LH) of the first quantum bit (QUB)) is referred to as the first horizontal line (LH1) in the following, and [1779] where the horizontal line (LH) of the second quantum bit (QUB2) is the said first horizontal line (LH1) and [1780] whereby the vertical line (LV) of the first quantum bit (QUB1) is referred to as the first vertical line (LV1) in the following, and [1781] whereby the vertical line (LV) of the second quantum bit (QUB2) will be referred to as the second vertical line (LV2) in the following.

[1782] Feature 224. Quantum register (QUREG) according to one or more of the features 222 to 223, [1783] wherein the magnetic field and/or the state of the second quantum dot (NV2) of the second quantum bit (QUB2) influences the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) at least temporarily and/or [1784] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) influences the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[1785] Feature 225. Quantum register (QUREG) according to one or more of the features 222 to 224, [1786] wherein the spatial distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) and the second quantum dot (NV2) of the second quantum bit (QUB2) is so small. [1787] that the magnetic field and/or the state of the second quantum dot (NV2) of the second quantum bit (QUB2) influences the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) at least temporarily, and/or [1788] that the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) influences the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[1789] Feature 226. Quantum register (QUREG) according to one or more of the features 222 to 225, [1790] wherein the spatial distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) and the second quantum dot (NV2) of the second quantum bit (QUB2) is less than 50 nm and/or less than 30 nm and/or less than 20 nm and/or less than 10 nm and/or less than 5 nm and more than 2 nm.

[1791] Feature 227. Quantum register (QUREG) according to one or more of the features 222 to 226, [1792] with at least a third quantum bit (QUB3) according to one or more of the preceding features 1 to 102.

[1793] Feature 228. Quantum register (QUREG) according to feature 207 [1794] wherein the first quantum dot type of the first quantum dot (NV1) of the first quantum bit (QUB1) is equal to the third quantum dot type of the third quantum dot (NV3) of the third quantum bit (QUB3).

[1795] Feature 229. Quantum register (QUREG) according to one or more of features 227 to 228 and according to feature 223, [1796] wherein the substrate (D) or epitaxial layer (DEP1) is common to the first quantum bit (QUB1) and the third quantum bit (QUB3); and [1797] wherein the quantum dot (NV) of the third quantum bit (QUB3) is the third quantum dot (NV3) and [1798] where the horizontal line (LH) of the third quantum bit (QUB3) is the said first horizontal line (LH1) and [1799] whereby the vertical line (LV) of the third quantum bit (QUB3) will be refereed to as the third vertical line (LV3) in the following.

[1800] Feature 230. Quantum register (QUREG) according to one or more of the features 227 to 229, [1801] wherein the magnetic field and/or the state of the second quantum dot (NV2) of the second quantum bit (QUB2) influences the behavior of the third quantum dot (NV3) of the third quantum bit (QUB3) at least temporarily and/or [1802] wherein the magnetic field and/or the state of the third quantum dot (NV3) of the third quantum bit (QUB3) influences the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[1803] Feature 231. Quantum register (QUREG) according to one or more of the features 227 to 230 [1804] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) essentially does not influence the behavior of the third quantum dot (NV3) of the third quantum bit (QUB3) at least temporarily, and/or [1805] wherein the magnetic field and/or the state of the third quantum dot (NV3) of the third quantum bit (QUB3) essentially does not affect the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1), at least temporarily, [1806] whereby “essentially” is to be understood here in such a way that the influencing that does take place is insignificant for the technical result in the majority of cases.

[1807] Feature 232. Quantum register (QUREG) according to one or more of the features 222 to 231, [1808] wherein the spatial distance (sp13) between the first quantum dot (NV1) of the first quantum bit (QUB1) and the third quantum dot (NV3) of the third quantum bit (QUB3) is. [1809] that the magnetic field and/or the state of the third quantum dot (NV3) of the third quantum bit (QUB3) essentially does not directly influence the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1), at least at times, and/or [1810] that the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) essentially does not directly influence the behavior of the third quantum dot (NV3) of the third quantum bit (QUB3) at least temporarily, [1811] wherein “essentially” is to be understood here as meaning that the influencing that does take place is insignificant for the technical result in the majority of cases, and [1812] wherein “not directly” means that an influence, if any, can only occur indirectly by means of ancilla quantum dots or ancilla quantum bits.

[1813] Feature 233. Quantum register (QUREG) according to one or more of features 227 to 232, [1814] wherein the spatial distance (sp23) between the third quantum dot (NV3) of the third quantum bit (QUB3) and the second quantum dot (NV2) of the second quantum bit (QUB2) is so small, [1815] that the magnetic field and/or the state of the second quantum dot (NV2) of the second quantum bit (QUB2) influences the behavior of the third quantum dot (NV3) of the third quantum bit (QUB3) at least temporarily, and/or [1816] that the magnetic field and/or the state of the third quantum dot (NV3) of the third quantum bit (QUB3) influences the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[1817] Feature 234. Quantum register (QUREG) according to one or more of the features 227 to 233, [1818] wherein the spatial distance (sp23) between the third quantum dot (NV3) of the third quantum bit (QUB3) and the second quantum dot (NV2) of the second quantum bit (QUB2) is less than 50 nm and/or less than 30 nm and/or less than 20 nm and/or less than 10 nm and/or less than 5 nm and more than 2 nm.

[1819] Feature 235. Quantum register (QUREG) according to one or more of the features 222 to 234, [1820] wherein the device (LH1, LV1) of the first quantum bit (QUB1) for controlling the first quantum dot (NV1) of the first quantum bit (QUB1) can influence the first quantum dot (NV1) of the first quantum bit (QUB1) with a first probability, and [1821] wherein the device (LH1, LV1) of the first quantum bit (QUB1) for controlling the first quantum dot (NV1) of the first quantum bit (QUB1) can influence the second quantum dot (NV2) of the second quantum bit (QUB2) with a second probability, and [1822] wherein the device (LH2, LV2) of the second quantum bit (QUB2) for controlling the second quantum dot (NV2) of the second quantum bit (QUB2) can influence the first quantum dot (NV1) of the first quantum bit (QUB1) with a third probability, and [1823] wherein the device (LH2, LV2) of the second quantum bit (QUB2) for controlling the second quantum dot (NV2) of the second quantum bit (QUB2) can influence the second quantum dot (NV2) of the second quantum bit (QUB2) with a fourth probability, and [1824] wherein the first probability is greater than the second probability, and [1825] wherein the first probability is greater than the third probability, and [1826] wherein the fourth probability is greater than the second probability, and [1827] wherein the fourth probability is greater than the third probability.

[1828] Feature 236. Quantum register (QUREG) according to one or more of the features 222 to 235, [1829] wherein the device (LH1, LV1) of the first quantum bit (QUB1) for controlling the first quantum dot (NV1) of the first quantum bit (QUB1) can selectively influence the quantum state of the first quantum dot (NV1) of the first quantum bit (QUB1) with respect to the quantum state of the second quantum dot (NV2) of the second quantum bit (QUB2), and [1830] wherein the device (LH2, LV2) of the second quantum bit (QUB2) for controlling the second quantum dot (NV2) of the second quantum bit (QUB2) can selectively influence the quantum state of the second quantum dot (NV2) of the second quantum bit (QUB2) with respect to the quantum state of the first quantum dot (NV1) of the first quantum bit (QUB1).

[1831] Feature 237. Quantum register (QUREG) according to one or more of the features 222 to 236, [1832] wherein the first quantum dot (NV1) is spaced from the second quantum dot (NV2) by a distance (sp12) such that features 235 and/or 236 apply.

[1833] Feature 238. Quantum register (QUREG) according to one or more of features 222 to 237 and according to feature 237, [1834] wherein the spacing (sp12) is less than 100 nm and/or wherein the spacing (sp12) is less than 50 nm and/or wherein the spacing (sp12) is less than 20 nm and/or wherein the spacing (sp12) is less than 10 nm and/or wherein the spacing (sp12) is greater than 5 nm and/or wherein the spacing (sp12) is greater than 2 nm, a spacing (sp12) of 20 nm being particularly preferred.

[1835] Feature 239. Quantum register (QUREG) according to one or more of the features 222 to 238, [1836] wherein the quantum bits of the quantum register (QUREG) are arranged in a one- or two-dimensional lattice.

[1837] Feature 240. Quantum register (QUREG) according to feature 239, [1838] wherein the quantum bits of the quantum register (QUREG) are arranged in a one- or two-dimensional lattice of elementary cells of arrays of one or more quantum bits with a spatial spacing (sp12) as the lattice constant for the respective elementary cell.

Electron-A1-Electron-B2-Quantum-Register (IHQUREG) 241-252

[1839] Feature 241. Inhomogeneous Quantum Register (IHQUREG). [1840] with a first quantum bit (QUB1) according to one or more of the preceding features 1 to 102 and [1841] with at least one second quantum bit (QUB2) according to one or more of the preceding features 1 to 102, [1842] where the first quantum dot type of the first quantum dot (NV1) of the first quantum bit (QUB1) is different from the second quantum dot type of the second quantum dot (NV2) of the second quantum bit (QUB2).

[1843] Feature 242. Inhomogeneous quantum register (IHQUREG) according to the previous feature, [1844] wherein the first quantum bit (QUB1) is pan of a quantum register (QUREG) according to one or more of features 222 to 240 and/or [1845] wherein the second quantum bit (QUB2) is part of a quantum register (QUREG) according to one or more of features 222 to 240.

[1846] Feature 243. Inhomogeneous quantum register (IHQUREG) according to one or more of the features 241 to 242, [1847] wherein the substrate (D) or epitaxial layer (DEP1) is common to the first quantum bit (QUB1) and the second quantum bit (QUB2) and [1848] wherein the quantum dot (NV) of the first quantum bit (QUB1) is the first quantum dot (NV1) and [1849] wherein the quantum dot (NV) of the second quantum bit (QUB2) is the second quantum dot (NV2) and [1850] whereby the horizontal line (LH) of the first quantum bit (QUB1) is referred to as the first horizontal line (LH1) in the following, and [1851] where the horizontal line (LH) of the second quantum bit (QUB2) is the said first horizontal line (LH1) and [1852] whereby the vertical line (LV) of the first quantum bit (QUB1) is referred to as the first vertical line (LV1) in the following and [1853] whereby the vertical line (LV) of the second quantum bit (QUB2) will be [1854] referred to as the second vertical line (LV2) in the following.

[1855] Feature 244. Inhomogeneous quantum register (IHQUREG) according to one or more of features 241 to 243, [1856] wherein the magnetic field and/or the state of the second quantum dot (NV2) of the second quantum bit (QUB2) influences the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) at least temporarily and/or [1857] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) influences the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[1858] Feature 245. Inhomogeneous quantum register (IHQUREG) according to one or more of features 241 to 244, [1859] wherein the spatial distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB11 and the second quantum dot (NV2) of the second quantum bit (QUB2) is so small. [1860] that the magnetic field and/or the state of the second quantum dot (NV2) of the second quantum bit (QUB2) influences the behavior of the first quantum dot (NV1) of the first quantum bit (QUB1) at least temporarily, and/or [1861] that the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) influences the behavior of the second quantum dot (NV2) of the second quantum bit (QUB2) at least temporarily.

[1862] Feature 246. Inhomogeneous quantum register (IHQUREG) according to one or more of features 241 to 245, [1863] wherein the second distance (sp12) between the first quantum dot (NV1) of the first quantum bit (QUB1) and the second quantum dot (NV2) of the second quantum bit (QUB2) is less than 50 nm and/or less than 30 nm and/or less than 20 nm and/or less than 10 nm and/or less than 10 nm and/or less than 5 nm and more than 2 nm.

[1864] Feature 247. Inhomogeneous quantum register (IHQUREG) according to one or more of features 241 to 246, [1865] wherein the device (LH1. LV1) of the first quantum bit (QUB1) for controlling the first quantum dot (NV1) of the first quantum bit (QUB1) can influence the first quantum dot (NV1) of the first quantum bit (QUB1) with a first probability, and [1866] wherein the device (LH1, LV1) of the first quantum bit (QUB1) for controlling the first quantum dot (NV) of the first quantum bit (QUB1) can influence the second quantum dot (NV2) of the second quantum bit (QUB2) with a second probability, and [1867] wherein the device (LH2, LV2) of the second quantum bit (QUB2) for controlling the second quantum dot (NV2) of the second quantum bit (QUB2) can influence the first quantum dot (NV1) of the first quantum bit (QUB1) with a third probability, and [1868] wherein the device (LH2. LV2) of the second quantum bit (QUB2) for controlling the second quantum dot (NV2) of the second quantum bit (QUB2) can influence the second quantum dot (NV2) of the second quantum bit (QUB2) with a fourth probability, and [1869] wherein the first probability is greater than the second probability, and [1870] wherein the first probability is greater than the third probability, and [1871] wherein the fourth probability is greater than the second probability, and [1872] wherein the fourth probability is greater than the third probability.

[1873] Feature 248. Inhomogeneous quantum register (IHQUREG) according to one or more of the features 241 to 247 [1874] wherein the device (LH1, LV1) of the first quantum bit (QUB1) for controlling the first quantum dot (NV1) of the first quantum bit (QUB1) can selectively influence the quantum state of the first quantum dot (NV1) of the first quantum bit (QUB1) with respect to the quantum state of the second quantum dot (NV2) of the second quantum bit (QUB2), and [1875] wherein the device (LH2, LV2) of the second quantum bit (QUB2) for controlling the second quantum dot (NV2) of the second quantum bit (QUB2) can selectively influence the quantum state of the second quantum dot (NV2) of the second quantum bit (QUB2) with respect to the quantum state of the first quantum dot (NV1) of the first quantum bit (QUB1).

[1876] Feature 249. Inhomogeneous quantum register (IHQUREG) according to one or more of features 241 to 248 [1877] wherein the first quantum dot (NV1) is spaced from the second quantum dot (NV2) by a distance (sp12) such that features 247 and/or 248 apply.

[1878] Feature 250. Inhomogeneous quantum register (IHQUREG) according to one or more of features 241 to 249 and according to feature 249. [1879] wherein the spacing (sp12) is less than 100 nm and/or wherein the spacing (sp12) is less than 30 nm and/or wherein the spacing (sp12) is less than 20 nm and/or wherein the spacing (sp12) is less than 10 nm and/or wherein the spacing (sp12) is greater than 5 nm and/or wherein the spacing (sp12) is greater than 2 nm, a spacing (sp12) of 20 nm being particularly preferred.

[1880] Feature 251. Inhomogeneous quantum register (IHQUREG) according to one or more of the features 241 to 250, [1881] wherein the quantum bits of the inhomogeneous quantum register (IHQUREG) are arranged in from elementary cells of arrangements of two or more quantum bits a one or two-dimensional lattice for the respective unit cell.

[1882] Feature 252. Inhomogeneous quantum register (IHQUREG) according to feature 251 [1883] wherein the quantum bits of the inhomogeneous quantum register (IHQUREG) are arranged in a one- or two-dimensional lattice of unit cells of arrays of one or more quantum bits with a second spacing (sp12) as the lattice constant for the respective unit cell.

Nuclear Spin1-Nuclear Spin2 Quantum Register (CCQUREG) 253-271

[1884] Feature 253. Nucleus-nuclear quantum register (CCQUREG). [1885] with a first nuclear quantum bit (CQUB1) according to one or more of the preceding features 103 to 202, and [1886] with at least a second nuclear quantum bit (CQUB2) according to one or more of the preceding features 103 to 202.

[1887] Feature 254. Nucleus-nuclear quantum register (CCQUREG) according to the previous feature 253, [1888] wherein the substrate (D) or epitaxial layer (DEP1) is common to the first nuclear quantum bit (CQUB1) and the second nuclear quantum bit (CQUB2); and [1889] wherein the nuclear quantum dot (CI) of the first nuclear quantum bit (CQUB1) in the following is the first nuclear quantum dot (CI1), and [1890] wherein the nuclear quantum dot (CI) of the second quantum bit (CQUB2) in the following is the second nuclear quantum dot (CI2), and [1891] wherein the horizontal line (LH) of the first nuclear quantum bit (CQUB1) will be referred to as the first horizontal line (LH1) in the following; and [1892] wherein the horizontal line (LH) of the second nuclear quantum bit (CQUB2) is the said first horizontal line (LH1) and [1893] wherein the vertical line (LV) of the first nuclear quantum bit (CQUB1) is referred to as the first vertical line (LV1) in the following, and [1894] wherein the vertical line (LV) of the second nuclear quantum bit (CQUB2) will be referred to as the second vertical line (LV2) in the following.

[1895] Feature 255. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 253 to 254, [1896] wherein the magnetic field and/or the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) influences the behavior of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) at least temporarily and/or [1897] wherein the magnetic field and/or the state of the first nuclear quantum dot (CI) of the first nuclear quantum bit (CQUB1) influences the behavior of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) at least temporarily.

[1898] Feature 256. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 253 to 255, [1899] wherein the spatial distance (sp12) between the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) is so small, [1900] that the magnetic field and/or the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) influences the behavior of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) at least temporarily, and/or [1901] that the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) influences the behavior of the second nuclear quantum dot (CI2) of the second quantum bit (CQUB2) at least temporarily.

[1902] Feature 257. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 253 to 256, [1903] wherein the fourth distance (sp12′) between the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) is less than 100 pm and/or less than 50 pm and/or less than 30 pm and/or less than 20 pm and/or less than 10 pm.

[1904] Feature 258. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 253 to 257, [1905] with at least a third nuclear quantum bit (CQUB3) according to one or more of the preceding features 103 to 202.

[1906] Feature 259. Nucleus-nuclear quantum register (CCQUREG) of one or more of features 253 to 258 and according to feature 258 and according to feature 254, [1907] wherein the substrate (D) or epitaxial layer (DEP1) is common to the first nuclear quantum bit (CQUB1) and the third nuclear quantum bit (CQUB3), and [1908] wherein the nuclear quantum dot (CI) of the third nuclear quantum bit (CQUB3) is the third nuclear quantum dot (CI3), and [1909] wherein the horizontal line (LH) of the third nuclear quantum bit (CQUB3) is the said first horizontal line (LH1), and [1910] wherein the vertical line (LV) of the third nuclear quantum bit (CQUB3) will be referred to as the third vertical line (LV3) in the following.

[1911] Feature 260. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 258 to 259, [1912] wherein the magnetic field and/or the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) influences the behavior of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) at least temporarily and/or [1913] wherein the magnetic field and/or the state of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) influences the behavior of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) at least temporarily.

[1914] Feature 261. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 258 to 260, [1915] wherein the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) essentially does not affect the behavior of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) at least temporarily, and/or [1916] wherein the magnetic field and/or the state of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) essentially does not affect the behavior of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1), at least temporarily. [1917] wherein “essentially” is to be understood here in such a way that the influencing that does take place is insignificant for the technical result in the majority of cases.

[1918] Feature 262. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 258 to 262 [1919] wherein the spatial distance (sp13′) between the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) and the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) is, [1920] that the magnetic field and/or the state of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) essentially does not directly influence the behavior of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1), at least at times, and/or [1921] that the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) essentially does not directly influence the behavior of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) at least temporarily, [1922] wherein “essentially” is to be understood here as meaning that the influencing that does take place is insignificant for the technical result in the majority of cases, and [1923] wherein “not directly” means that an influence, if any, can only occur indirectly by means of ancilla quantum dots or ancilla quantum bits.

[1924] Feature 263. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 258 to 262, [1925] wherein the spatial distance (sp23′) between the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) is so small, [1926] that the magnetic field and/or the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) influences the behavior of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) at least temporarily, and/or [1927] that the magnetic field and/or the state of the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) influences the behavior of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) at least temporarily.

[1928] Feature 264. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 258 to 263, [1929] wherein the spatial distance (sp23′) between the third nuclear quantum dot (CI3) of the third nuclear quantum bit (CQUB3) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) is less than 100 pm and/or less than 50 pm and/or less than 30 pm and/or less than 20 pm and/or less than 10 pm, and/or [1930] wherein the spatial distance (sp12′) between the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) and the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) is less than 100 pm and/or less than 50 pm and/or less than 30 pm and/or less than 20 pm and/or less than 10 pm.

[1931] Feature 265. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 253 to 264, [1932] wherein the device (LH1, LV1) of the first nuclear quantum bit (CQUB1) for controlling the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) can influence the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) with a first probability and [1933] wherein the device (LH1, LV1) of the first nuclear quantum bit (CQUB1) for controlling the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) can influence the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) with a second probability and [1934] wherein the device (LH2, LV2) of the second nuclear quantum bit (CQUB2) for controlling the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) can influence the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) with a third probability and [1935] wherein the device (LH2, LV2) of the second nuclear quantum bit (CQUB2) for controlling the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) can influence the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) with a fourth probability and [1936] wherein the first probability is greater than the second probability and [1937] wherein the first probability is greater than the third probability and [1938] wherein the fourth probability is greater than the second probability and [1939] wherein the fourth probability is greater than the third probability.

[1940] Feature 266. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 258 to 267 [1941] wherein the device (LH1, LV1) of the first nuclear quantum bit (CQUB1) for controlling the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) can selectively influence the quantum state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) with respect to the quantum state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2), and [1942] wherein the device (LH2. LV2) of the second nuclear quantum bit (CQUB2) for controlling the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) can selectively influence the quantum state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) with respect to the quantum state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1).

[1943] Feature 267. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 258 to 266, [1944] wherein the first nuclear quantum dot (CI1) is spaced from the second nuclear quantum dot (CI2) by a distance (sp12′) such that features 265 and/or 266 apply.

[1945] Feature 268. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 258 to 267 and according to feature 267, [1946] wherein the spacing (sp12′) is less than 100 nm and/or wherein the spacing (spin) is less than 30 nm and/or wherein the spacing (sp12′) is less than 20 nm and/or wherein the spacing (sp12′) is less than 10 nm and/or wherein the spacing (sp12′) is greater than 5 nm and/or wherein the spacing (sp12′) is greater than 2 nm, a spacing (sp12) of 20 nm being particularly preferred.

[1947] Feature 269. Nucleus-nuclear quantum register (CCQUREG) according to one or more of features 253 to 264, [1948] wherein the nuclear quantum bits of the nucleus-nuclear quantum register (CCQUREG) are arranged in a one- or two-dimensional lattice.

[1949] Feature 270. Nucleus-nuclear quantum register (CCQUREG) according to feature 269, [1950] wherein the nuclear quantum bits of the nucleus-nuclear quantum register (CCQUREG) are arranged in a one- or two-dimensional lattice of unit cells of arrays of one or more nuclear quantum bits with a second spacing (sp12) as the lattice constant for the respective unit cell.

[1951] Feature 271. Nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 233 to 270, [1952] wherein at least one nuclear quantum dot has a different isotope than another nuclear quantum dot of the nucleus-nuclear quantum register (CCQUREG).

Nucleus-Elecltron_Nucleus-Electron Quantum Register (CECEQUREG) 272-278

[1953] Feature 272. Nucleus-electron-nuclear quantum register (CECEQUREG) [1954] with a first nuclear quantum bit (CQUB1) according to one or more of the preceding features 103 to 202, and [1955] with at least one second nuclear quantum bit (CQUB2) according to one or more of the preceding features 103 to 202, and [1956] with a first quantum bit (QUB1) according to one or more of the preceding features 1 to 102 and [1957] with at least a second quantum bit (QUB2) according to one or more of the preceding features 1 to 102.

[1958] Feature 273. Nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to feature 272, [1959] wherein the first nuclear quantum bit (CQUB1) comprises a first nuclear quantum dot (CI1) and [1960] wherein the second nuclear quantum bit (CQUB2) comprises a second nuclear quantum dot (CI2), characterized in that [1961] that the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) cannot directly influence the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2), and [1962] that the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) can influence the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) with the aid of the first quantum bit (QUB1), in particular as a first ancilla quantum bit.

[1963] Feature 274. Nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to feature 272 or feature 273, [1964] wherein the first nuclear quantum bit (CQUB1) comprises a first nuclear quantum dot (CI1); and [1965] wherein the second nuclear quantum bit (CQUB2) comprises a second nuclear quantum dot (CI2), characterized in that [1966] that the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) cannot directly influence the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) and [1967] that the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) cannot influence the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) even with the sole aid of the first quantum bit (QUB1), [1968] but that the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) can influence the state of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) only with the aid of the first quantum bit (QUB1), in particular as a first ancilla quantum bit, and only with the additional aid of at least the second quantum bit (QUB2), in particular as a second ancilla quantum bit.

[1969] Feature 275. Nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to one or more of features 272 to 274, [1970] wherein the first nuclear quantum bit (CQUB1) and the first quantum bit (QUB1) form a nucleus-electron quantum register (CEQUREG), hereinafter referred to as first nucleus-electron quantum register (CEQUREG1), according to one or more of features 203 to 215 and [1971] wherein the second nuclear quantum bit (CQUB2) and the second quantum bit (QUB2) form a nucleus-electron quantum register (CEQUREG), hereinafter referred to as second nucleus-electron quantum register (CEQUREG2), according to one or more of features 203 to 215.

[1972] Feature 276. Nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to feature 272, [1973] wherein the first nuclear quantum bit (CQUB1) and the second nuclear quantum bit (CQUB2) form a nucleus-nuclear quantum register (CCQUREG) according to one or more of features 253 to 271.

[1974] Feature 277. Nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to feature 272, [1975] wherein the first quantum bit (QUB1) and the second quantum bit (CQUB2) form an electron-electron quantum register (QUREG) according to one or more of features 222 to 235.

[1976] Feature 278. Nucleus-electron-nucleus-electron quantum register (CECEQUREG) characterized in that it is a nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to feature 276 and according to feature 277.

[1977] Quantum Dot Arrays

Quantum Dot Array (QREG1D, QREG2D) 279-286

[1978] Feature 279. Arrangement of quantum dots (QREG1D, QREG2D) [1979] where the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) are arranged in a one-dimensional grid (QREG1D) or in a two-dimensional grid (QREG2D).

[1980] Feature 280. Arrangement of quantum dots (NV) according to the previous feature, [1981] wherein the distance (sp12) of two immediately adjacent quantum dots of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is smaller than 100 nm and/or is smaller than 50 nm and/or is smaller than 30 nm and/or is smaller than 20 nm and/or is smaller than 10 nm.

[1982] Feature 281. Arrangement of quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) according to one or more of the preceding two features. [1983] wherein at least two quantum dots of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) are each individually pan of exactly one quantum bit according to one or more of features 1 to 13.

[1984] Feature 282. Arrangement of quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) according to one or more of features 279 to 281, [1985] where a quantum dot of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is a paramagnetic center.

[1986] Feature 283. Arrangement of quantum dots (NV1I, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) according to one or more of features 279 to 281, [1987] wherein one of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is a V.sub.Si center and/or a DV center and/or a V.sub.CV.sub.SI center and/or a CAV.sub.Si center and/or a N.sub.CV.sub.SI center in a silicon carbide material or another paramagnetic impurity center in a silicon carbide material, in particular a silicon carbide crystal.

[1988] Feature 284. Arrangement of quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) according to one or more of features 279 to 281, [1989] wherein a quantum dot of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is a paramagnetic impurity center in a mixed crystal of elements of the IV.sup.th main group of the periodic table.

[1990] Feature 285. Arrangement of quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) according to one or more of features 279 to 281, [1991] wherein one quantum dot of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is a G-center in a silicon material, especially in a silicon crystal.

[1992] Feature 286. Arrangement of quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) according to one or more of features 279 to 281, [1993] where a quantum dot of the quantum dots (NV11, NV12, NV13, NV21, NV22, NV23, NV31, NV32, NV33) is an NV center in diamond.

Nuclear Quantum Dot Array (CQREG1D, CQREG2D) 287-297

[1994] Feature 287. Arrangement of nuclear quantum dots (CQREG1D, CQREG2D) [1995] where the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are arranged in a one-dimensional lattice (CQREG1D) or in a two-dimensional lattice (CQREG2D).

[1996] Feature 288. Nuclear quantum dot (CI) arrangement according to feature 287, [1997] wherein the nucleus spacing (sp12′) of two immediately adjacent nuclear quantum dots of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is less than 200 pm and/or is less than 100 pm and/or is less than 50 pm and/or is less than 30 pm and/or is less than 20 pm and/or is less than 10 pm.

[1998] Feature 289. Arrangement of nuclear quantum dots(CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to one or more of features 287 to 288. [1999] wherein at least two nuclear quantum dots of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) are each individually part of exactly one nuclear quantum bit according to one or more of the features 103 to 202

[2000] Feature 290. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to one or more of features 287 to 289, [2001] where a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is a nucleus isotope with a nonzero nucleus magnetic moment μ.

[2002] Feature 291. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to feature 290 [2003] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus isotope having a nonzero nucleus magnetic moment μ in a crystal of one or more elements of the IV.sup.th main group of the periodic table.

[2004] Feature 292. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to feature 291, [2005] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus isotope having a nonzero nucleus magnetic moment μ in a crystal of one or more elements, but at least two elements of the IV.sup.th main group of the periodic table.

[2006] Feature 293. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to feature 291, [2007] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus isotope having a nonzero nucleus magnetic moment μ in a crystal of one or more elements, but at least three elements of the IV.sup.th main group of the periodic table.

[2008] Feature 294. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to feature 291. [2009] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus isotope having a nonzero nucleus magnetic moment μ in a crystal of one or more elements, but at least four elements of the IV.sup.th main group of the periodic table.

[2010] Feature 295. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to one or more of features 287 to 289, [2011] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus of a .sup.13C isotope in diamond or in silicon or in silicon carbide or in a mixed crystal of elements of the IV.sup.th main group of the periodic table as substrate (D) and/or as epitaxial layer (DEP1).

[2012] Feature 296. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to one or more of features 287 to 295, [2013] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus of a .sup.15N isotope in diamond or in silicon or in silicon carbide or in a mixed crystal of elements of the IV.sup.th main group of the periodic table as substrate (D) and/or as epitaxial layer (DEP1).

[2014] Feature 297. Arrangement of nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) according to one or more of features 287 to 296. [2015] wherein a nuclear quantum dot of the nuclear quantum dots (CI11, CI12, CI13, CI21, CI22, CI23, CI31, CI32, CI33) is an atomic nucleus of a .sup.14N isotope in diamond or in silicon or in silicon carbide or in a mixed crystal of elements of the IV.sup.th main group of the periodic table as substrate (D) and/or as epitaxial layer (DEP1).

[2016] Preparation Operations

Frequency Determination Method 298-318

[2017] Feature 298. Procedure [2018] to prepare the change of the quantum information of a first quantum dot (NV1), in particular of the electron configuration of the quantum dot (NV1), of a first quantum bit (QUB1) according to one or more of the features 1 to 102 depending on the quantum information of this first quantum dot (NV1), in particular of the first spin of the first electron configuration of the first quantum dot (NV1), of the first quantum bit (QUB1) with the step: [2019] determining the energy shift of the first quantum dot (NV1), in particular its first electron configuration, especially when the spin of the first electron configuration is spin-up or when the spin of the first electron configuration is spin-down, by means of an ODMR experiment by tuning the frequency (f) and determining an electron1-electron1 microwave resonance frequency (f.sub.MW).

[2020] Feature 299. Procedure according to feature 298 [2021] with the additional step [2022] Storing the determined microwave resonance frequency (f.sub.MW) in a memory cell of a memory of a control device (μC) as a stored microwave resonance frequency (f.sub.MW).

[2023] Feature 300. Method according to one or more of the features 298 to 299 [2024] with the additional step [2025] changing the quantum information of a first quantum dot (NV1), in particular the electron configuration of the quantum dot (NV1), of a first quantum bit (QUB1) according to one or more of features 1 to 102 function of the quantum information of this first quantum dot (NV1), in particular the first spin of the first electron configuration of the first quantum dot (NV1), of the first quantum bit (QUB1), [2026] where this change is made using the stored microwave resonance frequency (f.sub.MW).

[2027] Feature 301. Procedure according to feature 300 [2028] wherein this change is made by means of an electromagnetic field with the stored microwave resonance frequency (f.sub.MW).

[2029] Feature 302. Method according to one or more of the features 298 to 301, [2030] wherein the electromagnetic field is generated by one or more devices (LH, LV) for generating a circularly polarized magnetic field (B.sub.CI), 302

[2031] Feature 303 Procedure [2032] for preparing the change of the quantum information of a first quantum dot (NV1), in particular of the spin of the electron configuration of the quantum dot (NV1), of a first quantum bit (QUB1) of a quantum register (QUREG) according to one or more of the features 222 to 235 dependence on the quantum information of a second quantum dot (NV2), in particular of the second spin of the second electron configuration of the second quantum dot (NV2), of a second quantum bit (QUB2) of this quantum register (QUREG) with the step: [2033] determining the energy shift of the first quantum dot (NV1), in particular its first electron configuration, especially when the spin of the second electron configuration is spin-up or when the spin of the second electron configuration is spin-down, by means of an ODMR experiment by tuning the frequency (f) and determining an electron1-electron2 microwave resonance frequency (f.sub.MWEE).

[2034] Feature 304. Method according to feature 303 with the additional step [2035] storing the determined electron1-electron2 microwave resonance frequency (f.sub.MWEE) in a memory cell of a memory of a control device (μC) as a stored electron1-electron2 microwave resonance frequency (f.sub.MWEE).

[2036] Future 305. The method according to feature 304 comprising the additional step of [2037] changing the quantum information of a first quantum dot (NV1), in particular the spin of the electron configuration of the quantum dot (NV1), of a first quantum bit (QUB1) of a quantum register (QUREG) according to one or more of the features 222 to 235 function of the quantum information of a second quantum dot (NV2), in particular from the second spin of the second electron configuration of the second quantum dot (NV2), of a second quantum bit (QUB2) of this quantum register (QUREG), [2038] wherein this change is made using the stored electron1-electron2 microwave resonance frequency (f.sub.MWEE).

[2039] Future 306. Procedure according to feature 305, [2040] wherein this change occurs by means of an electromagnetic field with the stored electron1-electron2 microwave resonance frequency (f.sub.MWEE).

[2041] Feature 307. Procedure according to feature 306, [2042] wherein the electromagnetic field is generated by one or more devices (LH, LV) for generating a circularly polarized magnetic field (B.sub.CI).

[2043] Feature 308. Procedure for the preparation of the amendment [2044] the quantum information of a quantum dot (NV), in particular the spin of its electron configuration, of a quantum bit (QUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 as a function of the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of this nucleus-electron quantum register (CEQUREG) with the step: [2045] determining the energy shift of the quantum dot (NV), in particular its electron, especially when the nuclear spin is spin-up or when the nuclear spin is spin-down, by means of an ODMR experiment by tuning the frequency (f) and determining a nucleus-electron microwave resonance frequency (f.sub.MWCE).

[2046] Feature 309. Procedure according to feature 308, [2047] with the additional step: [2048] storing the determined nucleus-electron microwave resonance frequency (f.sub.MWCE) in a memory cell of a memory of a control device (μC) as a stored nucleus-electron microwave resonance frequency (f.sub.MWCE).

[2049] Feature 310. Method according to one or more of the features 308 to 309 [2050] with the additional step [2051] changing the quantum information of a quantum dot (NV), in particular the spin of its electron configuration, of a quantum bit (QUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 as a function of the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of this nucleus-electron quantum register (CEQUREG), [2052] wherein this change is made using the stored nucleus-electron microwave resonance frequency (f.sub.MWCE).

[2053] Feature 311. Procedure according to feature 310, [2054] whereby this change occurs by means of an electromagnetic field with the stored nucleus-electron microwave resonance frequency (f.sub.MWCE).

[2055] Feature 312. Method according to one or more of the features 308 to 311, [2056] wherein the electromagnetic field is generated by one or more devices (LH, LV) for generating a circularly polarized magnetic field (B.sub.CI).

[2057] Feature 313. Procedure [2058] for preparing the change of the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 as a function of the quantum information of a quantum dot (NV), in particular the spin of its electron configuration, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG) with the step: [2059] Determination of the energy shift of a quantum dot (NV), in particular its electron configuration, especially when the nuclear spin is spin-up or when the nuclear spin is spin-down, by means of an ODMR experiment by tuning the frequency (f) and determining the electron-nucleus radio wave resonance frequencies (f.sub.RWEC).

[2060] Feature 314. Procedure according to feature 313, [2061] with the additional step [2062] Storing the determined electron-nucleus radio wave resonance frequencies (f.sub.RWEC) in one or more memory cells of a memory of a control device (μC) as a stored electron-nucleus radio wave resonance frequency (f.sub.RWEC).

[2063] Feature 315. Method according to one or more of the features 313 to 314, [2064] with the additional step [2065] changing the quantum information of a quantum dot (NV), in particular the spin of its electron configuration, of a quantum bit (QUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 as a function of the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of this nucleus-electron quantum register (CEQUREG), [2066] wherein this change is made using one or more of the stored nucleus-electron-radio wave resonance frequencies (f.sub.RWEC).

[2067] Feature 316. Procedure according to feature 315. [2068] whereby this change takes place by means of an electromagnetic field with the stored nucleus electron radio wave resonance frequency (f.sub.RWCE).

[2069] Feature 317. Method according to one or more of the features 313 to 316, [2070] wherein the electromagnetic field is generated by one or more devices (LH, LV) for generating a circularly polarized magnetic field (B.sub.CI).

[2071] Feature 318. Procedure [2072] for preparing the change of the quantum information of a first nuclear quantum dot (CI1), in particular of the nuclear spin of its nucleus, of a first nuclear quantum bit (CQUB) of a nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 253 to 269 function of the quantum information of a second nuclear quantum dot (CI2), in particular the nuclear spin of the second nuclear quantum dot (Ci2), of a second nuclear quantum bit (CQUB2) of this nucleus-nuclear quantum register (CCQUREG) with the step: [2073] determining the energy shift of a first nuclear quantum dot (CI1), in particular its first nuclear spin, especially when the second nuclear spin of the second nuclear quantum dot (CI2) is spin-up or when the second nuclear spin is spin-down, by means of an ODMR experiment by tuning the frequency (f) and determining the nucleus-nucleus radio wave resonance frequencies (f.sub.RWCC).

[2074] Feature 319. Procedure according to feature 318, [2075] with the additional step [2076] Storing the determined nucleus-nucleus radio wave resonance frequencies (f.sub.RWCC) in one or more memory cells of a memory of a control device (μC) as stored nucleus-nucleus radio wave resonance frequencies (f.sub.RWCC).

[2077] Feature 320. Method according to one or more of the features 318 to 319 [2078] with the additional step [2079] changing the quantum information of a quantum dot (NV), in particular the spin of its electron configuration, of a quantum bit (QUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 as a function of the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of this nucleus-electron quantum register (CEQUREG), [2080] wherein this change is made using one or more of the stored nucleus-to-nucleus radio wave resonance frequencies (f.sub.RWCC).

[2081] Feature 321. Procedure according to feature 320, [2082] wherein this change occurs by means of an electromagnetic field with the stored nucleus-nucleus radio wave resonance frequencies (f.sub.RWCC).

[2083] Feature 322. Method according to one or more of the features 318 to 321, [2084] wherein the electromagnetic field is generated by one or more devices (LH, LV) for generating a circularly polarized magnetic field (B.sub.CI).

[2085] Single Operations

Quantum Bit Reset Method 323

[2086] Feature 323. A method of resetting a quantum dot (NV) of a quantum bit (QUB) according to one or more of the preceding features 1 to 102 [2087] irradiating at least one quantum dot (NV) of the quantum dots (NV1, NV2) with light functionally equivalent to irradiation of an NV center in the use of this NV center in diamond as quantum dots (NV) with green light with respect to the effect of this irradiation on the quantum dot (NV), [2088] wherein in particular the use of a NV center (NV) in diamond as a quantum dot (NV), the green light has a wavelength in a wavelength range of 400 nm to 700 nm wavelength and/or 450 nm to 650 nm and/or 500 nm to 550 nm and/or 515 nm to 540 nm, preferably 532 nm wavelength, and [2089] wherein this function-equivalent light is referred to as “green light” in the following and in this feature. Reference is made here to the section “green light as excitation radiation” on function-equivalent excitation wavelengths.

[2090] Feature 324. A method of resetting a quantum dot (NV) of a quantum bit (QUB) according to one or more of the preceding features 1 to 102 [2091] irradiating at least one quantum dot (NV) of the quantum dots (NV1, NV2) with excitation radiation having an excitation wavelength, [2092] wherein the excitation wavelength is shorter than the wavelength of the ZPL (zero-phonon-line) of the paramagnetic center serving as quantum dot (NV). Reference is made here to the section “green light as excitation radiation” on function-equivalent excitation wavelengths.

Nucleus-Electron Quantum Register Reset Method 325-327

[2093] Feature 325. A method of resetting a nucleus-electron quantum register (CEQUREG) according to one or more of features 203 to 215

comprising the steps of [2094] resetting the quantum dot (NV) of the quantum bit (QUB) of the nucleus-electron quantum register (CEQUREG), in particular according to a method according to feature 323 and/or feature 324; [2095] change of the quantum information of the nuclear quantum dot (CI), in particular of the nuclear spin of its nucleus, of the nuclear quantum bit (CQUB) of the nucleus-electron quantum register (CEQUREG) as a function of the quantum information of the quantum dot (NV), in particular of its electron, of the quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG).

[2096] Feature 326. Method for resetting the nucleus-electron quantum register (CEQUREG) according to feature 325, [2097] wherein resetting the quantum dot (NV) of the quantum bit (QUB) of the nucleus-electron quantum register (CEQUREG) is performed using a method according to feature 323 and/or feature 324.

[2098] Feature 327. Method for resetting the nucleus-electron quantum register (CEQUREG) according to feature 325 or 326, [2099] wherein the change of the quantum information of the nuclear quantum dot (CI), in particular of the nuclear spin of its atomic nucleus, of the nuclear quantum bit (CQUB) of the nucleus-electron quantum register (CEQUREG) is carried out as a function of the quantum information of the quantum dot (NV), in particular of its electron, of the quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG) by means of a method according to one or more of the features 391 to 400.

[2100] Quantum Bit Manipulations

Quantum Bit Manipulation Methods 328-333

[2101] Feature 328. Method for manipulating a quantum bit (QUB), [2102] wherein the quantum bit (QUA) is a quantum bit (QUB) according to one or more of features 1 to 102 [2103] with the steps [2104] temporary energization of the horizontal line (LH) with a horizontal current (IH) having a horizontal current component modulated with an electron1-electron1 microwave resonance frequency (f.sub.mw) with a horizontal modulation: [2105] temporary energization of the vertical line (LV) with a vertical current (IV) with a vertical current component modulated with the electron-electron microwave resonance frequency (NO with a vertical modulation.

[2106] Feature 329. Method according to feature 328, [2107] wherein the horizontal modulation of the horizontal current component is phase shifted by +/−90° with respect to the vertical modulation of the vertical current component.

[2108] Feature 330. Method according to feature 328 or 329, [2109] wherein the vertical current component is pulsed with a vertical current pulse having a pulse duration, and [2110] where the horizontal current component is pulsed with a horizontal current pulse with a pulse duration.

[2111] Feature 331. Method according to one or more of the features 328 to 330, [2112] where the vertical current pulse is out of phase with respect to the horizontal current pulse by +/−π/2 of the period of the electron-electron microwave resonance frequency (f.sub.MW).

[2113] Feature 332. Method according to one or more of the features 328 to 331. [2114] wherein the temporal pulse duration of the horizontal current pulse and the vertical current pulse has the pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the quantum dot (NV), or [2115] wherein the temporal pulse duration of the horizontal current pulse and the vertical current pulse has the pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum dot (NV).

[2116] Feature 333. Method according to one or more of the features 328 to 331, [2117] where the current pulse has a transient phase and a decay phase, and [2118] where the current pulse has an amplitude envelope, and [2119] where the pulse duration refers to the time interval of the time points of the 70% amplitude of the maximum amplitude envelope.

Nuclear Quantum Bit Manipulation Methods 334-338

[2120] Feature 334. Method for manipulating a nuclear quantum bit (QUB), [2121] wherein the nuclear quantum bit (CQUB) is a nuclear quantum bit (CQUB) according to one or more of features 103 to 202 with the steps [2122] energizing the horizontal line (LH) of the nuclear quantum bit (CQUB) with a horizontal current (IH) having a horizontal current component modulated with a first nucleus-nucleus radio wave frequency (f.sub.RWCC) and/or with a second nucleus-nucleus radio wave frequency (f.sub.RWCC2) as a modulation frequency with a horizontal modulation; [2123] energizing the vertical line (LV) of the nuclear quantum bit (CQUB) is modulated with a vertical current (IV) with a vertical current component modulated with the modulation frequency with a vertical modulation, [2124] whereby the horizontal modulation of the horizontal current component is phase shifted by +/−90° with respect to the vertical modulation of the vertical current component.

[2125] Feature 335. Procedure according to feature 334, [2126] wherein the vertical current component is pulsed with a vertical current pulse having a pulse duration, and [2127] wherein the horizontal current component is pulsed with a horizontal current pulse with a pulse duration

[2128] Feature 336. Method according to one or more of the features 334 to 335, [2129] wherein the vertical current pulse is phase shifted relative to the horizontal current pulse by +/−π/2 of the period of the first nucleus-to-nucleus radio wave frequency (f.sub.RWCC) or by +/−π/2 of the period of the second nucleus-to-nucleus radio wave frequency (f.sub.RWCC2).

[2130] Feature 337. Method according to one or more of the features 335 to 336, [2131] wherein the temporal pulse duration of the horizontal current pulse and the vertical current pulse has the pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the period of the Rabi oscillation nuclear quantum dot (CI) of the first nuclear quantum bit (CQUB), or [2132] wherein the temporal pulse duration of the horizontal current pulse and the vertical current pulse has the pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation nuclear quantum dot (CI) of the first nuclear quantum bit (CQUB).

[2133] Feature 338. Method according to one or more of the features 335 to 336, [2134] wherein the current pulse has a transient phase and a decay phase, and [2135] wherein the current pulse has an amplitude envelope, and [2136] wherein the pulse duration refers to the time interval of the time points of the 70% amplitude of the maximum amplitude envelope.

[2137] Quantum Register Single Operations 339-417

Selective Manipulation Methods for Individual Quantum Bits in Quantum Registers 339-122

Selective NV1 Quantum Bit Drive Method 339-346

[2138] Feature 339. Method for selectively controlling a first quantum bit (QUB1) of a quantum register (QUREG) according to one or more of the features 222 to 240, [2139] with the steps [2140] temporary energization of the first horizontal line (LH1) of the quantum register (QUREG) with a first horizontal current component of the first horizontal current (IH1) modulated with a first horizontal electron1-electron1 microwave resonance frequency (f.sub.MWHI1) with a first horizontal modulation; [2141] temporary energization of the first vertical line (LV1) of the quantum register (QUREG) with a first vertical current component of the first vertical current (IV1) is modulated with the first vertical electron1-electron1 microwave resonance frequency (f.sub.MWV1) with a first vertical modulation. [2142] additionally energizing the first horizontal line (LH1) with a first horizontal DC component (IHG1) of the first horizontal current (IH1), [2143] where the first horizontal DC component (IHG1) may have a first horizontal current value of 0A; [2144] additionally energizing the first vertical line (LV1) with a first vertical DC component (IVG1) of the first vertical current (IV). [2145] wherein the first vertical DC component (IVG1) may have a first vertical current value of 0A; [2146] additional energization of the second vertical line (LV2) with a second vertical DC component (IVG2), [2147] wherein the first horizontal current (IH1) in the first horizontal line (LH1) is a sum of at least the first horizontal direct current component (IHG1) of the first horizontal current (IH1) plus the first horizontal current component of the first horizontal current (IH1), and [2148] wherein the first vertical current (IV1) in the first vertical line (LV1) is a sum of at least the first vertical direct current component (IVG1) of the first vertical current (IV1) plus the first vertical current component of the first vertical current (IV1), and [2149] wherein the second vertical current (IV2) in the second vertical line (LV2) is a sum of at least the second vertical direct current component (IVG2) of the second vertical current (IV2) plus the second vertical current component of the second vertical current (IV2), and [2150] wherein the second vertical direct current component (IVG2) has a second vertical current value that differs from the first vertical current value of the first vertical direct current component (IVG1).

[2151] Feature 340. Method according to feature 339 with the step [2152] temporary energization of the second vertical line (LV2) of the quantum register (QUREG) with a second vertical current component of the second vertical current (IV2) is modulated with the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) with a second vertical modulation.

[2153] Feature 341. Procedure according to feature 339, [2154] wherein the method according to feature 339 is used to select the first quantum bit (QUB1) or the second quantum bit (QUB2) by detuning the first vertical electron1-electron1 microwave resonance frequency (f.sub.MWV1) with respect to the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2).

[2155] Feature 342. Method according to feature 339 or 341, [2156] wherein the first horizontal modulation is phase shifted by +/−π/2 of the period of the first horizontal electron1-electron1 microwave resonance frequency (f.sub.MWHI1) with respect to the first vertical modulation.

[2157] Feature 343. Method according to feature 339 or 342, [2158] wherein the first vertical electron1-electron1 microwave resonance frequency (f.sub.MWV1) is equal to the first horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH1).

[2159] Feature 344. Method according to one or more of the features 339 to 343, [2160] wherein the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration; and [2161] wherein the first horizontal current component is pulsed with a first horizontal current pulse having the first pulse duration

[2162] Feature 345. Method according to one or more of features 339 to 344 and feature 344, [2163] wherein the first vertical current pulse is phase shifted from the first horizontal current pulse by +/−π/2 of the period of the first horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH1).

[2164] Feature 346. Method according to one or more of the features 339 to 345, [2165] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the first quantum dot (NV1) and/or [2166] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the first quantum dot (NV1).

Selective NV2 SEP. LH2 LTG Quantum Register Drive Method 347-354

[2167] Feature 347. Method for differentially controlling a first quantum bit (QUB1) and a second quantum bit (QUB2) of a quantum register (QUREG) according to one or more of the preceding features 339 to 346 comprising the additional steps of [2168] additionally energizing the second horizontal line (LH2) with a second horizontal current component of the second horizontal current (IH2) modulated with a second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2) with a second horizontal modulation, [2169] additionally energizing the second vertical line (LV2) with a second vertical current component of the second vertical current (IV2) modulated with a second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) with a second vertical modulation.

[2170] Feature 348. Method according to feature 347, [2171] additionally energizing the second horizontal line (LH2) with a second horizontal DC component (IHG2) of the second horizontal current (IH2), [2172] wherein the second horizontal DC component (IHG2) may have a second horizontal current value of 0A; and [2173] wherein the second horizontal current (IH2) in the second horizontal line (LH2) is a sum of at least the second horizontal direct current component (IHG2) of the second horizontal current (IH2) plus the second horizontal current component of the second horizontal current (IH2).

[2174] Feature 349. Method according to feature 347 or 348, [2175] wherein the second horizontal modulation is phase shifted by +/−π/2 of the period of the second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2) with respect to the second vertical modulation.

[2176] Feature 350. Method according to feature 347 to 349, [2177] wherein the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) is equal to the second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2).

[2178] Feature 351. Method according to one or more of the features 347 to 350, [2179] wherein the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration; and [2180] wherein the first horizontal current component is pulsed with a second horizontal current pulse having the second pulse duration

[2181] Feature 352. Method according to one or more of features 347 to 351 and feature 351, [2182] wherein the second vertical current pulse is phase shifted with respect to the second horizontal current pulse by +/−π/2 of the period of the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2).

[2183] Feature 353. Method according to one or more of the features 351 to 352, [2184] wherein the quantum register (QUREG) comprises more than two quantum bits.

[2185] Feature 354. Method according to one or more of the features 351 to 353, [2186] wherein the second temporal pulse duration has a second pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the second quantum dot (NV2) and/or [2187] where the second temporal pulse duration has a second pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the second quantum dot (NV2).

Selective NV2 ACC. LV1 Quantum Register Drive Method 355-360

[2188] Feature 355. Method for differentially controlling a first quantum bit (QUB1) and a second quantum bit (QUB2) of a quantum register (QUREG) according to one or more of the preceding features 339 to 346 comprising the additional steps of [2189] additionally energizing the second horizontal line (LH2) with a second horizontal current component of the second horizontal current (IH2) modulated with a second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2) with a second horizontal modulation, [2190] additionally energizing the first vertical line (LV1) with a second vertical current component of the first vertical current (IV1 modulated with a second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) with a second vertical modulation.

[2191] Feature 356. Method according to feature 355, [2192] wherein the second horizontal modulation is phase shifted by +/−π/2 of the period of the second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2) with respect to the second vertical modulation.

[2193] Feature 357. Method according to features 355 and 355, [2194] wherein the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) is equal to the second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2).

[2195] Feature 358. Method according to one or more of the features 355 to 357, [2196] wherein the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration and [2197] wherein the first horizontal current component is pulsed with a second horizontal current pulse having the second pulse duration

[2198] Feature 359. Method according to one or more of features 355 to 358 and feature 358, [2199] wherein the second vertical current pulse is phase shifted with respect to the second horizontal current pulse by +/−π/2 of the period of the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2).

[2200] Feature 360. Method according to one or more of the features 358 to 359, [2201] wherein the second temporal pulse duration has a second pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the second quantum dot (NV2) and/or [2202] wherein the second temporal pulse duration has a second pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the second quantum dot (NV2).

Selective NV2 Mixed LH1 Line Quantum Register Drive Method 361-366

[2203] Feature 361. Method for differentially controlling a first quantum bit (QUB1) and a second quantum bit (QUB2) of a quantum register (QUREG) according to one or more of the preceding features 339 to 346 comprising the additional steps of [2204] additionally energizing the first horizontal line (LH1) with a second horizontal current component of the first horizontal current (IH1) modulated with a second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2) with a second horizontal modulation, [2205] additionally energizing the second vertical line (LV2) with a second vertical current component of the second vertical current (IV2) modulated with a second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) with a second vertical modulation.

[2206] Feature 362. Method according to feature 361, [2207] wherein the second horizontal modulation is +/−90° out of phase with the second vertical modulation.

[2208] Feature 363. Method according to feature 361 to 362, [2209] wherein the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2) is equal to the second horizontal electron1-electron1 microwave resonance frequency (f.sub.MWH2).

[2210] Feature 364. Method according to one or more of the features 361 to 363, [2211] wherein the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration; and [2212] wherein the first horizontal current component is pulsed with a second horizontal current pulse having the second pulse duration

[2213] Feature 365. Method according to one or more of features 361 to 364 and feature 364, [2214] wherein the second vertical current pulse is phase shifted with respect to the second horizontal current pulse by +/−π/2 of the period of the second vertical electron1-electron1 microwave resonance frequency (f.sub.MWV2).

[2215] Feature 366. Method according to one or more of the features 364 to 365 [2216] wherein the second temporal pulse duration has a second pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the second quantum dot (NV2) and/or [2217] where the second temporal pulse duration has a second pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the second quantum dot (NV2).

Electron1-Electron2-Exchange-Operation 367-383

Non-Selective NV1 NV2 Quantum Bit Coupling Method 367-381

[2218] Feature 367. Method of controlling the pair of a first quantum bit (QUB1) and a second quantum bit (QUB2) of a quantum register (QUREG) of said quantum register (QUREG) according to one or more of features 222 to 240. [2219] with the steps [2220] temporary energization of the first horizontal line (LH1) of the quantum register (QUREG) with a first horizontal current component of the first horizontal current (IH1) modulated with a first horizontal electron1-electron2 microwave resonance frequency (f.sub.MWHEE1) with a first horizontal modulation; [2221] temporary energization of the first vertical line (LV1) of the quantum register (QUREG) with a first vertical current component of the first vertical current (IV1) modulated with a first vertical electron1-electron2 microwave resonance frequency (f.sub.MWVEE1) with a first vertical modulation; [2222] temporary energization of the second horizontal line (LH2) of the quantum register (QUREG) with a second horizontal current component of the second horizontal current (IH2) modulated with the first horizontal electron1-electron2 microwave resonance frequency (f.sub.MWHEE1) with the second horizontal modulation; [2223] temporary energization of the second vertical line (LV2) of the quantum register (QUREG) with a second vertical current component of the second vertical current (IV2) modulated with the first vertical electron1-electron2 microwave resonance frequency (f.sub.MWVEE1) with the second vertical modulation [2224] wherein the second horizontal line (LH2) may be equal to the first horizontal line (LH1) and wherein then the second horizontal current (IH2) is equal to the first horizontal current (IH1) and wherein then the second horizontal current (IH2) is already injected with the injection of the first horizontal current (IH1), and [2225] wherein the second vertical line (LV2) can be equal to the first vertical line (LV2) and wherein then the second vertical current (IV2) is equal to the first vertical current (IV1) and wherein then the second vertical current (IV2) is already injected with the injection of the first vertical current (IV1).

[2226] Feature 368. Method according to feature 367, [2227] wherein the first horizontal modulation is phase shifted by +/−π/2 of the period of the first horizontal electron1-electron2 microwave resonance frequency (f.sub.MWHEE1) with respect to the first vertical modulation, and [2228] wherein the second horizontal modulation is phase shifted by +/−π/2 of the period of the second horizontal electron1-electron2 microwave resonance frequency (f.sub.MWHEE2) with respect to the second vertical modulation.

[2229] Feature 369. Method according to feature 367, [2230] additionally energizing the first horizontal line (LH1) with a first horizontal DC component (IHG1) of the first horizontal current (IH1), [2231] wherein the first horizontal DC component (IHG1) has a first horizontal current value; [2232] wherein the first horizontal DC component (IHG1) may have a first horizontal current value of 0A; [2233] additionally energizing the first vertical line (LV1) with a first vertical DC component (IVG1) of the first vertical current (IV1), [2234] wherein the first vertical DC component (IVG1) has a first vertical current value; [2235] wherein the first vertical DC component (IVG1) may have a first vertical current value of 0A; [2236] additionally energizing the second horizontal line (LH2) with a second horizontal DC component (IHG2) of the second horizontal current (IH2), [2237] wherein the second horizontal DC component (IHG2) has a second horizontal current value; [2238] wherein the second horizontal DC component (IHG2) may have a second horizontal current value of 0A; [2239] additionally energizing the second vertical line (LV2) with a second vertical DC component (IVG2) of the second vertical current (IV2), [2240] wherein the second vertical DC component (IVG2) has a second vertical current value; [2241] wherein the second vertical DC component (IVG2) may have a first vertical current value of 0A;

[2242] Feature 370. Method according to one or more of the features 367 to 368, [2243] wherein the first horizontal current value is equal to the second horizontal current value.

[2244] Feature 371. Method according to one or more of the features 367 to 370, [2245] wherein the first vertical current value is equal to the second vertical current value.

[2246] Feature 372. Method according to one or more of the features 367 to 371, [2247] wherein the first vertical electron1-electron1 microwave resonance frequency (f.sub.MWV1) is equal to the first horizontal electron1-electron2 microwave resonance frequency (f.sub.MWHEE1).

[2248] Feature 373. Method according to one or more of the features 367 to 372, [2249] wherein the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration; and [2250] wherein the first horizontal current component is pulsed with a first horizontal current pulse having the first pulse duration

[2251] Feature 374. Method according to one or more of the features 367 to 373, [2252] wherein the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration; and [2253] wherein the second horizontal current component is pulsed with a second horizontal current pulse having the second pulse duration.

[2254] Feature 375. Method according to one or more of the features 367 to 374, [2255] wherein the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration and [2256] wherein the first horizontal current component is pulsed with a first horizontal current pulse having the first pulse duration.

[2257] Feature 376. Method according to one or more of the features 367 to 375, [2258] wherein the second vertical current component is pulsed with a second vertical current pulse having a second pulse duration and [2259] wherein the second horizontal current component is pulsed with a second horizontal current pulse having the second pulse duration.

[2260] Feature 377. Method according to one or more of features 367 to 376 and feature 375 [2261] wherein the first vertical current pulse is phase shifted with respect to the first horizontal current pulse by +/−π/2 of the period of the first electron1-electron2 microwave resonance frequency (f.sub.MWHEE1).

[2262] Feature 378. Method according to one or more of features 367 to 377 and feature 376, [2263] wherein the second vertical current pulse is phase shifted with respect to the second horizontal current pulse by +/−π/2 of the period of the second electron1-electron2 microwave resonance frequency (f.sub.MWHEE2).

[2264] Feature 379. Method according to one or more of the features 367 to 378, [2265] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2) and/or [2266] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2).

[2267] Feature 380. Method according to one or more of the features 367 to 377, [2268] wherein the second temporal pulse duration has a second pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2) and/or [2269] wherein the second temporal pulse duration has a second pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum dot pair of the first quantum dot (NV1) and the second quantum dot (NV2).

[2270] Feature 381. Method according to feature 377 and 380, [2271] wherein the first temporal pulse duration is equal to the second temporal pulse duration.

Selective NV1 NV2 Quantum Bit Coupling Method 382-383

[2272] Feature 382. Method according to one or more of the features 367 to 381 for controlling the pair of a first quantum bit (QUB1) and a second quantum bit (QUB2) of a quantum register (QUREG) according to one or more of the features 222 to 240, [2273] wherein the gating is selective with respect to further quantum bits (QUBj) of this quantum register (QUREG), [2274] with the steps [2275] additionally energizing the first horizontal line (LH1) with a first horizontal DC component (IHG1) of the first horizontal current (IH1), [2276] wherein the first horizontal DC component (IHG1) has a first horizontal current value: [2277] wherein the first horizontal DC component (IHG1) may have a first horizontal current value of 0A; [2278] additionally energizing the first vertical line (LV1) with a first vertical DC component (IVG1) of the first vertical current (IV1), [2279] wherein the first vertical DC component (IVG1) has a first vertical current value: [2280] wherein the first vertical DC component (IVG1) may have a first vertical current value of 0A; [2281] additionally energizing the second horizontal line (LH2) with a second horizontal DC component (IHG2) of the second horizontal current (IH2), [2282] wherein the second horizontal DC component (IHG2) has a second horizontal current value: [2283] wherein the second horizontal DC component (IHG2) may have a second horizontal current value of 0A: [2284] additionally energizing the second vertical line (LV2) with a second vertical DC component (IVG2) of the second vertical current (IV2), [2285] wherein the second vertical DC component (IVG2) has a second vertical current value; [2286] wherein the second vertical DC component (IVG2) may have a first vertical current value of 0A: [2287] additional energization of the j-th horizontal line (LHj) of a further j-th quantum bit (QUBj), if present, of the quantum register (QUREG) with a j-th horizontal direct current component (IHGj), [2288] wherein the j-th horizontal DC component (IHGj) has a j-th horizontal current value; [2289] additional energization of the j-th vertical line (LVj) of a further j-th quantum bit (QUBj), if present, of the quantum register (QUREG) with a j-th vertical direct current component (IVGj). [2290] wherein the j-th vertical DC component (IHGj) has a j-th vertical current value.

[2291] Feature 383. Procedure according to feature 382. [2292] wherein the first vertical current value is different from the j-th vertical current value and/or. [2293] wherein the second vertical current value is different from the j-th vertical current value and/or. [2294] wherein the first horizontal current value is different from the j-th horizontal current value and/or. [2295] wherein the second horizontal current value is different from the j-th horizontal current value.

General Entanglement (Electron-Electron Entanglement) 384-385

[2296] Feature 384. Method for entangling the quantum information of a first quantum dot (NV1), in particular the spin of its electron configuration, of a first quantum bit (QUB1) of a quantum register (QUREG) according to one or more of the features 222 to 240 an inhomogeneous quantum register (IQUREG) according to one or more of the features 241 to 252 with the quantum information of a second quantum dot (NV2), in particular the first spin of the first electron configuration of the second quantum dot (QUB2), of a second quantum bit (QUB2) of this quantum register (QUREG) or of said inhomogeneous quantum register (IQUREG), hereinafter referred to as electron-entanglement operation, characterized in that. [2297] that it comprises a method for resetting the electron-electron quantum register (CEQUREG) or the inhomogeneous quantum register (IQUREG), and [2298] that it comprises a method for executing a Hadamard gate: and [2299] that it comprises a method for executing a CNOT gate. [2300] that it comprises another method for entangling the quantum information of the first quantum dot (NV1), in particular the first spin of the first electron configuration of the first quantum dot (NV1), the first quantum bit (QUB1) of the quantum register (QUREG) according to one or more of the features 222 to 240 or of the inhomogeneous quantum register (IQUREG) according to one or more of the features 241 to 252 with the quantum information of a second quantum dot (NV2), in particular of the second spin of the second electron configuration of this second quantum dot (NV2), of a second quantum bit (QUB2) of this electron-electron quantum register (QUREG) or of this inhomogeneous quantum register (IQUREG).

[2301] Feature 385. Method for entangling the quantum information of a first quantum dot (NV1), in particular of the first spin of the first electron configuration, of a first quantum bit (QUB1) of a quantum register (QUREG) according to one or more of the features 222 to 240 or of an inhomogeneous quantum register (IQUREG) according to one or more of the features 241 to 252 with the quantum information of a second quantum dot (NV2), in particular of the second spin of the second electron configuration of the second quantum dot (QUB2), of a second quantum bit (QUB2) of this quantum register (QUREG) or of said inhomogeneous quantum register (IQUREG), hereinafter referred to as electron-entanglement operation, characterized in that, [2302] that it comprises a method for resetting the electron-electron quantum register (CEQUREG) or the inhomogeneous quantum register (IQUREG) according to feature 323 and/or feature 324 and [2303] that it comprises a method of performing a Hadamard gate according to one or more of features 328 to 333 and [2304] that it comprises a method for executing a CNOT gate according to feature 420 [2305] that it comprises another method for entangling the quantum information of the first quantum dot (NV1), in particular the first spin of the first electron configuration of the first quantum dot (NV11, the first quantum bit (QUB1) of the quantum register (QUREG) according to one or more of the features 222 to 240 or of the inhomogeneous quantum register (IQUREG) according to one or more of the features 241 to 252 with the quantum information of a second quantum dot (NV2), in particular of the second spin of the second electron configuration of this second quantum dot (NV2), of a second quantum bit (QUB2) of this electron-electron quantum register (QUREG) or of this inhomogeneous quantum register (IQUREG).

Electron-Nucleus Exchange Operation 386-410

Nucleus-Elektron-CNOT (Nucleus-Electron-CNOT-Operation) 386-390

[2306] Feature 386. NUCLEUS-ELECTRON-CNOT operation for changing the quantum information of a quantum dot (NV), in particular its electron or electron configuration thereof, of a quantum bit (QUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 function of the quantum information of a nuclear quantum dot (CI), in particular of the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as nucleus-electron CNOT operation, comprising the step of [2307] injecting a horizontal current component of the horizontal current (IH) in to the horizontal line (LH) of the quantum bit (QUB), [2308] wherein the horizontal current component has a horizontal modulation with the nucleus-electron microwave resonance frequency (f.sub.MWCE), and [2309] injecting a vertical current component of the vertical current (IV) in to the vertical line (LV) of the quantum bit (QUB). [2310] where the vertical current component exhibits vertical modulation with the nucleus-electron microwave resonance frequency (f.sub.MWCE).

[2311] Feature 387. Method according to feature 386, [2312] wherein the vertical modulation is shifted relative to the horizontal modulation by +/−π/2 of the period of the nucleus-electron microwave resonance frequency (f.sub.MWCE).

[2313] Feature 388. Method according to feature 386 and 387, [2314] wherein the first vertical current component is pulsed with a first vertical current pulse having a first pulse duration; and [2315] wherein the first horizontal current component is pulsed with a first horizontal current pulse having the first pulse duration.

[2316] Feature 389. Method according to one or more of the features 386 to 388, [2317] wherein the first vertical current pulse is out of phase with respect to the horizontal current pulse by +/−π/2 of the period of the microwave resonance frequency (f.sub.MWCE).

[2318] Feature 390. Method according to one or more of the features 386 to 389, [2319] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the Rabi oscillation of the quantum pair of the quantum dot (NV1) nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CQUB) of the nucleus-electron quantum register (CEQUREG) and/or [2320] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum pair of the quantum dot (NV1) nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CQUB) of the nucleus-electron quantum register (CEQUREG).

Elektron-CNOT (Electron-Nucleus Cnot Operation) 391-395

[2321] Feature 391. ELECTRON-NUCLEUS CNOT operation for changing the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 function of the quantum information of a quantum dot (NV), in particular its electron or electron configuration thereof, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as electron-nucleus CNOT operation, with the step: [2322] injecting a horizontal current component of the horizontal current (IH) in to the horizontal line (LH) of the quantum bit (QUB), [2323] wherein the horizontal current component has horizontal modulation at the electron-nucleus radio wave resonance frequency (f.sub.RWEC), and [2324] injecting a current component of the vertical current (IV) in to the vertical line (LV) of the quantum bit (QUB), [2325] wherein the vertical current component exhibits vertical modulation with the electron-nucleus radio wave resonance frequency (f.sub.RWEC).

[2326] Feature 392. Method according to feature 391, [2327] wherein the vertical modulation is shifted by +/−π/2 with respect to the horizontal modulation with respect to the period of the electron-nucleus radio wave resonance frequency (f.sub.RWEC).

[2328] Feature 393. Method according to feature 391 to 392, [2329] wherein the vertical current component is pulsed with a vertical current pulse having a pulse duration, and [2330] wherein the horizontal current component is pulsed with a horizontal current pulse with the pulse duration.

[2331] Feature 394. Method according to one or more of the features 391 to 393, [2332] where the vertical current pulse is out of phase with respect to the horizontal current pulse by +/−π/2 of the period of the electron-nucleus radio wave resonance frequency (f.sub.RWEC).

[2333] Feature 395. Method according to one or more of the features 391 to 394, [2334] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard) or 3π/4 or π (not-gate) of the Rabi oscillation of the quantum pair of the quantum dot (NV1) nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CQUB) of the nucleus-electron quantum register (CEQUREG) and/or [2335] wherein the first temporal pulse duration has a first pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum pair of the quantum dot (NV1) nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CQUB) of the nucleus-electron quantum register (CEQUREG).

Spin Exchange Nucleus-Elektron (Electron-Nucleus Exchange Operation) 396-398

[2336] Feature 396. Method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 213 with the quantum information of a quantum dot (NV), in particular its electron, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as electron-nucleus exchange operation, with the steps of [2337] performing an ELECTRON-NUCLEUS CNOT operation; [2338] subsequent performance of a NUCLEUS-ELEKTRON-CNOT operation; [2339] subsequent performance of an ELEKTRON NUCLEUS CNOT operation.

[2340] Feature 397. Procedure according to feature 396, [2341] wherein the method of performing an ELECTRON-NUCLEUS CNOT operation is a method according to one or more of features 391 to 395.

[2342] Feature 398. Method according to one or more of the features 396 to 397, [2343] wherein the method of performing a NUCLEUS-ELECTRON CNOT operation is a method according to one or more of features 386 to 390.

Alternative Nucleus-Electron Spin Exchange Procedure 399

[2344] Feature 399. Method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV), in particular its electron, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as an electron-nucleus exchange delay operation, having the following steps [2345] change the quantum information of the quantum dot (NV), especially the quantum information of the spin state of the electron configuration of the quantum dot (NV); [2346] subsequent waiting for a magnetic resonance relaxation time TK.

General Nucleus Entanglement (Nucleus-Electron Entanglement) 400

[2347] Feature 400. Method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV), in particular that of the spin of the electron configuration of the quantum dot (NV), of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as nucleus-electron ENTANGLEMENT operation, characterized, [2348] In that it comprises a method for resetting a nucleus-electron quantum register (CEQUREG); and [2349] that it comprises a method for executing a Hadamard gate and [2350] that it comprises a method for executing a CNOT gate and [2351] that it is another method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV), in particular that of the spin of the electron configuration of a quantum dot (NV), of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG)nucleus).

[2352] Feature 401. Method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV), in particular that of the spin of the electron configuration of the quantum dot (NV), of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as nucleus-electron-ENTANGLEMENT operation, characterized in that, [2353] that it comprises a method of resetting a nucleus electron quantum register (CEQUREG) according to one or more of the features 325 to 327 and [2354] that it comprises a method of performing a Hadamard gate according to one or more of features 328 to 333 and [2355] that it comprises a method for executing a CNOT gate according to feature 418 or [2356] that it is another method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV)), in particular that of the spin of the electron configuration of the quantum dot (NV), of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG).

General Entanglement (Nucleus-Electron Entanglement) 400

[2357] Feature 402. Method for exchanging the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV), in particular of its electron or its electron configuration, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG), hereinafter referred to as nucleus-electron exchange operation, characterized in that, [2358] that it is an electron-nucleus exchange delay operation, or [2359] that it is an electron-nucleus exchange operation or [2360] that it is another method for entangling the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 with the quantum information of a quantum dot (NV), in particular its electron, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG).

Electron-Nuclear Quantum Register Radio Wave Drive Method 403-407

[2361] Feature 403. Method for changing the quantum information of a nuclear quantum dot (CI), in particular the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 function of the quantum information of a quantum dot (NV), in particular its electron or its electron configuration, of a quantum bit (QUB) of this nucleus-electron quantum register (CEQUREG) [2362] with the steps [2363] controlling the horizontal line (LH) of the quantum bit (QUB) with a horizontal current (IH) with a horizontal current component modulated with an electron-nucleus radio wave resonance frequency (f.sub.RWEC) with a horizontal modulation; [2364] The vertical conduction (LV) of the quantum bit (QUB) is modulated by a vertical current (IV) with a vertical current component modulated by the electron-nucleus radio wave resonance frequency (f.sub.RWEC) with a vertical modulation.

[2365] Feature 404. Method according to feature 403, [2366] wherein the horizontal modulation of the horizontal current component is out of phase in time by +/−π/2 of the period of the electron-nucleus radio wave resonance frequency (f.sub.RWEC) with respect to the vertical modulation of the vertical current component.

[2367] Feature 405. Method according to feature 403 to 404. [2368] wherein the vertical current component is pulsed with a vertical current pulse, and [2369] wherein the horizontal current component is pulsed with a horizontal current pulse

[2370] Feature 406. Method according to one or more of features 403 to 405 and feature 405, [2371] wherein the second vertical current pulse is out of phase with respect to the second horizontal current pulse by +/−π/2 of the period of the electron-nucleus radio wave resonance frequency (f.sub.RWEC).

[2372] Feature 407. Method according to one or more of features 403 to 406 and feature 405 [2373] wherein the temporal pulse duration τ.sub.RCE of the horizontal current pulse and the vertical current pulse is the pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the period duration of the Rabi oscillation of the system consisting of the quantum dot (NV) of the quantum bit (QUB) of the nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nucleus-electron quantum register (CEQUREG) and/or [2374] wherein the temporal pulse duration τ.sub.RCE of the horizontal current pulse and the vertical current pulse has the pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the system consisting of the quantum dot (NV) of the quantum bit (QUB) of the nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nucleus-electron quantum register (CEQUREG).

Nucleus-Electron-Quantum-Register-Microwave-Control-Method 408-412

[2375] Feature 408. Method for changing the quantum information of a quantum dot (NV), in particular of its electron or its electron configuration, of a quantum bit (QUB) of a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 215 function of the quantum information of a nuclear quantum dot (CI), in particular of the nuclear spin of its atomic nucleus, of a nuclear quantum bit (CQUB) of this nucleus-electron quantum register (CEQUREG) [2376] with the steps [2377] energizing the horizontal line (LH) of the quantum bit (QUB) with a horizontal current (IH) with a horizontal current component modulated with a nucleus-electron microwave resonance frequency (f.sub.MWCE) with a horizontal modulation; [2378] energizing the vertical conduction (LV) of the quantum bit (QUB) with a vertical current (IV) with a vertical current component modulated by the nucleus-electron microwave resonance frequency (f.sub.MWCE) with a vertical modulation.

[2379] Feature 409. Method according to feature 408, [2380] where the horizontal modulation of the horizontal current component is phase shifted in time by +/−π/2 of the period of the nucleus-electron microwave resonance frequency (f.sub.MWCE) relative to the vertical modulation of the vertical current component.

[2381] Feature 410. Method according to feature 408 to 409 [2382] wherein the vertical current component is pulsed with a vertical current pulse, and [2383] where the horizontal current component is pulsed with a horizontal current pulse

[2384] Feature 411. Method according to one or more of features 408 to 410 and feature 410, [2385] wherein the second vertical current pulse is out of phase with respect to the second horizontal current pulse by +/−π/2 of the period of the nucleus-electron microwave resonance frequency (Goya).

[2386] Feature 412. Method according to one or more of the features 408 to 411, [2387] wherein the temporal pulse duration τ.sub.CE of the horizontal current pulse and the vertical current pulse is the pulse duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the period duration of the Rabi oscillation of the quantum pair of the quantum dot (NV) of the quantum bit (QUB) of the nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nucleus-electron quantum register (CEQUREG) and/or [2388] wherein the temporal pulse duration τ.sub.CE of the horizontal current pulse and the vertical current pulse has the pulse duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum pair of the quantum dot (NV) of the quantum bit (QUB) of the nucleus-electron quantum register (CEQUREG) and the nuclear quantum dot (CI) of the nuclear quantum bit (CQUB) of the nucleus-electron quantum register (CEQUREG).

Nucleus-Nuclear Quantum Register Radio Wave Drive Method 413-417

[2389] Feature 413. Method for changing the quantum information of a first nuclear quantum dot (CI1), in particular the nuclear spin of its atomic nucleus, of a first nuclear quantum bit (CQUB) of a nucleus-nuclear quantum register (CCQUREG) according to one or more of the features 253 to 269 function of the quantum information of a second nuclear quantum dot (CI2), in particular the nuclear spin of the second nuclear quantum dot (Ci2), of a second nuclear quantum bit (CQUB2) of this nucleus-nuclear quantum register (CCQUREG) [2390] with the steps [2391] energizing the first horizontal line (LH1) of the first nuclear quantum bit (CQUB1) with a first horizontal current component (IH1) modulated with a first nucleus radio wave resonance frequency (f.sub.RWECC) with a horizontal modulation; [2392] energizing the first vertical line (LV1) of the first nuclear quantum bit (CQUB1) with a first vertical current component (IV1) modulated with the first nucleus radio wave resonance frequency (f.sub.RWECC) with a vertical modulation.

[2393] Feature 414. Method according to the preceding feature [2394] where the horizontal modulation is out of phase in time by +/−π/2 of the period of the first nucleus-to-nucleus radio wave resonance frequency (f.sub.RWECC) relative to the vertical modulation.

[2395] Feature 415. Method according to one or more of the preceding features [2396] wherein the horizontal current component is at least temporarily pulsed with a horizontal current pulse component, and [2397] wherein the vertical current component is at least temporarily pulsed with a vertical current pulse component.

[2398] Feature 416. Method according to one or more of features 413 to 415 and feature 415, [2399] wherein the second vertical current pulse is out of phase with respect to the second horizontal current pulse by +/−π/2 of the period of the first nucleus-to-nucleus radio wave resonance frequency (f.sub.RWECC).

[2400] Feature 417. Method according to one or more of the features 413 to 416, [2401] wherein the temporal pulse duration τ.sub.RCC of the horizontal and vertical current pulse component has the duration corresponding to a phase difference of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) of the period Rabi oscillation of the quantum pair of first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) and of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2) and/or [2402] wherein the temporal pulse duration τ.sub.RCC of the horizontal and vertical current pulse components has the duration corresponding to a phase difference of an integer multiple of π/4 of the period of the Rabi oscillation of the quantum pair of first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) and of the second nuclear quantum dot (CI2) of the second nuclear quantum bit (CQUB2).

[2403] Composite Methods 418

Quantum Bit Evaluation 418

[2404] Feature 418. Method for evaluating the quantum information, in particular the spin state, of the first quantum dot (NV1) of a first quantum bit (QUB1) to be read out of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to one or more of the features 272 to 278 comprising the steps of [2405] irradiating the quantum dot (NV1) of the quantum bit to be read out (QUB1) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) with green light, in particular with light of 500 nm wavelength to 700 nm wavelength, typically with 532 nm wavelength; [2406] simultaneous application of a voltage between at least one first electrical extraction line, in particular a shielding line (SH1, SV1) used as the first electrical extraction line, and a second electrical extraction line, in particular a further shielding line (SH2, SV2) used as the second electrical extraction line and adjacent to the shielding line (SH1, SV1) used, [2407] wherein the quantum dot (NV1) of the quantum bit (QUB1) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) to be read out is located in the electric field between these two electric exhaust lines, and [2408] wherein the unreadable quantum dots (NV2) of the remaining quantum bits (QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) are not located in the electric field between these two electric exhaust lines; and [2409] Selectively controlling the quantum dot (NV1) to be read out of the quantum bit (QUB1) to be read out of the nucleus-electron-nucleus-electron quantum register (CECEQUREG), in particular according to one or more of features 339 to 366; [2410] generating photoelectrons by means of a two-photon process by the quantum dot (NV1) to be read out of the quantum bit (QUB1) to be read out of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) as a function of the nuclear spin of the nuclear quantum dot (CI1) of the nuclear quantum bit (CQUB1), which forms a nucleus-electron quantum register (CQUREG) with the quantum bit (QUB1) to be read out according to one or more of the features 203 to 215 [2411] suction of the electrons, if any, of the quantum dot (NV1) to be read out of the quantum bit (QUB1) to be read out of the quantum register (QUREG) via a contact (KV11, KH11) between the first electrical suction line, in particular the shielding line (SH1, SV1), and the substrate (D) or the epitaxial layer (DEP1) as electron current; [2412] suction of the holes, if any, of the quantum dot (NV1) to be read out of the quantum bit (QUB1) to be read out of the quantum register (QUREG) via a contact (KV12, KH22) between the second electrical suction line, in particular the further shielding line (SH2, SV2), and the substrate (D) or the epitaxial layer (DEP1) as hole current; [2413] generating an evaluation signal with a first logic value if the total current of hole current and electron current has a total current amount of the current value below a first threshold value (SW1), and [2414] generating an evaluation signal with a second logic value if the total current of hole current and electron current has a total current amount of the current value above the first threshold value (SW1) [2415] wherein the second logical value is different from the first logical value.

Quantum Computer Result Extraction 419

[2416] Feature 419. A method for reading out the state of a quantum dot (NV) of a quantum bit (QUB) according to one or more of features 1 to 102 comprising the steps of [2417] evaluation of the charge state of the quantum dot (NV); [2418] generation of an evaluation signal with a first logic level provided that the quantum dot (NV) is negatively charged at the start of the evaluation: [2419] generating an evaluation signal with a second logic level different from the first logic level, provided that the quantum dot (NV) is not negatively charged at the start of the evaluation.

Electron-Electron-Cnot Operation 420-421

[2420] Feature 420. A method of performing a quantum register (QUREG) CNOT manipulation, hereinafter referred to as ELEKTRON-ELEKTRON-CNOT, according to one or more of features 222 to 235, [2421] wherein the substrate (D) of the quantum register (QUREG) is common to the first quantum bit (QUB1) of the quantum register (QUREG) and the second quantum bit (QUB2) of the quantum register (QUREG), and [2422] wherein the quantum dot (NV) of the first quantum bit (QUB1) of the quantum register (QUREG) is the first quantum dot (NV1), and [2423] wherein the quantum dot (NV) of the second quantum bit (QUB2) of the quantum register (QUREG) is the second quantum dot (NV2); and [2424] whereby the horizontal line (LH) of the first quantum bit (QUB1) of the quantum register (QUREG) is referred to as the first horizontal line (LH1) in the following; and [2425] wherein the horizontal line (LH) of the second quantum bit (QUB2) of the quantum register (QUREG) is hereinafter referred to as the second horizontal line (LH2); and [2426] wherein the vertical line (LV) of the first quantum bit (QUB1) of the quantum register (QUREG) is hereinafter referred to as the first vertical line (LV1); and [2427] wherein the vertical line (LV) of the second quantum bit (QUB2) of the quantum register (QUREG) is hereinafter referred to as the second vertical line (LV2); and [2428] wherein the first horizontal line (LH1) can be equal to the second horizontal line (LH2) and [2429] wherein the first vertical line (LV1) can be equal to the second vertical line (LH2) if the first horizontal line (LH1) is not equal to the second horizontal line (LH2), [2430] with the steps [2431] energizing the first horizontal line (LH1) with a first horizontal current component of the first horizontal current (IH1) for a time duration corresponding to a first phase angle of φ1, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, of the period of the Rabi oscillation of the first quantum dot (NV1) of the first quantum bit (QUB1), [2432] wherein the first horizontal current component is modulated with a first microwave resonance frequency (f.sub.MW1) with a first horizontal modulation; [2433] energizing of the first vertical line (LV1) with a first vertical current component of the first vertical current (IV1) for a time duration corresponding to the first phase angle of φ1, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, of the period of the Rabi oscillation of the first quantum dot (NV1) of the first quantum bit (QUB1), [2434] wherein the first vertical current component is modulated with a first microwave resonance frequency (f.sub.MW1) with a first vertical modulation, [2435] wherein the energization of the first horizontal line (LH1), except for said phase shift, occurs in parallel with the energization of the first vertical line (LV1), and [2436] energizing the first horizontal line (LH1) with a first horizontal direct current (IHG1) having a first horizontal current value, wherein the first horizontal current value may have a magnitude of 0A: [2437] energizing the first vertical line (LV1) with a first vertical direct current (IVG1) having a first vertical current value, wherein the first vertical current value may have a magnitude of 0A; [2438] energizing of the second horizontal line (LH2) with a second horizontal direct current (IHG2) with the first horizontal current value, where the first horizontal current value can have an amount of 0A; [2439] energizing the second vertical line (IV2) with a second vertical direct current (IVG2), whose second vertical current value differs from the first vertical current value; [2440] wherein the second vertical current value and the first vertical current value are so selected, [2441] that the phase vector of the first quantum dot (NV1) of the first quantum bit (QUB1) performs a phase rotation about the first phase angle φ1, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, when the phase vector of the second quantum dot (NV2) of the second quantum bit (QUB2) is in a first position, and [2442] that the phase vector of the first quantum dot (NV1) of the first quantum bit (QUB1) does not perform a phase rotation about the phase angle (pi, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, if the phase vector of the second quantum dot (NV2) of the second quantum bit (QUB2) is not in the first position but in a second position, and [2443] that the phase vector of the second quantum dot (NV2) of the second quantum bit (QUB2) does not perform any or only an insignificant phase rotation; [2444] subsequent energization of the second horizontal line (LH2) with a second horizontal current component (IHM2) for a time duration corresponding to a phase angle of φ2, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, of the Rabi oscillation of the second quantum dot (NV2) of the second quantum bit, [2445] wherein the second horizontal current component (IHM2) is modulated with a second microwave resonance frequency (f.sub.MW2) with a second horizontal modulation; [2446] current of the second vertical line (LV2) with a second vertical current component (IVM2) for a time duration corresponding to a phase angle of φ2, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4 of the period of the Rabi oscillation of the second quantum dot (NV2) of the second quantum bit, [2447] wherein the second vertical current component (IVM2) is modulated with a second vertical microwave resonance frequency (f.sub.MW2) with a second vertical modulation. [2448] whereby the energization of the second horizontal line (LH2), except for the said phase shift, takes place in parallel in time with the energization of the second vertical line (LV2), and [2449] energizing the second horizontal line (LH2) with a second horizontal DC current component (IHG2) having a second horizontal current value, wherein the second horizontal current value may be from 0A; [2450] energizing the second vertical line (LV2) with a second vertical DC current component (IVG2) with a second vertical current value, where the second vertical current value can be from 0A; [2451] energizing the first horizontal line (LH1) with a first horizontal DC current component (IHG1) with a first horizontal current value, where the first horizontal current value can be from 0A; [2452] energizing the first vertical line (LV1) with a first vertical DC current component (IVG1) with a first vertical current value, wherein the first vertical current value differs from the second vertical current value; [2453] wherein the first vertical current value and the second vertical current value are now so selected, [2454] that the phase vector of the second quantum dot (NV2) of the second quantum bit (QUB2) performs a phase rotation by angle tin, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, when the phase vector of the first quantum dot (NV1) of the first quantum bit (QUB1) is in a first position, and [2455] that the phase vector of the second quantum dot (NV2) of the second quantum bit (QUB2) does not perform a phase rotation by the angle φ2, in particular of π/4 or π/2 (Hadamard gate) or 3π/4 or π (not-gate) or an integer multiple of π/4, if the phase vector of the first quantum dot (NV1) of the first quantum bit (QUB1) is not in the first position but in a second position, and [2456] that the phase vector of the first quantum dot (NV1) of the first quantum bit (QUB1) then does not perform a phase rotation.

[2457] Feature 421. Method according to feature 420, [2458] wherein the first horizontal modulation is phase shifted by +/−π/2 of the period of the first microwave resonance frequency (f.sub.MW1) with respect to the first vertical modulation, and/or [2459] wherein the second horizontal modulation is phase shifted by +/−π/2 of the period of the second microwave resonance frequency (f.sub.MW2) with respect to the second vertical modulation.

Quantum Computing 422-424

[2460] Feature 422. A method of operating a nucleus-electron-nucleus-electron quantum register (CECEQUREG) comprising the steps of. [2461] resetting the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG); [2462] single or multiple manipulation of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG); [2463] saving the manipulation result; [2464] resetting the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG); [2465] reading back the stored tamper results; [2466] reading the state of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG).

[2467] Feature 423. Method of operating a quantum register and/or a quantum bit according to feature 422. [2468] wherein the resetting of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) is performed by means of one or more methods according to one or more of features 323 to 327 and/or [2469] wherein the single or multiple manipulation of the quantum states of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) is performed by means of a method according to one or more of the features 328 to 333 and/or 339 to 383 and/or [2470] wherein storing the manipulation result is performed by means of a method according to one or more of features 386 to 407 and/or [2471] wherein the second resetting of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) is performed by means of one or more methods according to one or more of features 323 to 327 and/or [2472] wherein the backreading of the stored manipulation results is performed by means of a method according to one or more of the features 386 to 407 and/or [2473] wherein reading out the state of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the quantum register (QUREG) and/or the quantum dot (NV) of the quantum bit (QUB) is performed by means of a method according to one or more of features 418 to 419.

[2474] Feature 424. A method of operating a quantum register (QUREG) and/or a quantum bit (QUB) comprising the steps of. [2475] resetting the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) by means of one or more methods according to one or more of features 323 to 327; [2476] A single or multiple manipulation of the quantum states of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) by means of a method according to one or more of the features 328 to 333 and/or 339 to 383 [2477] storing the manipulation result using a method of one or more of features 386 to 407; [2478] resetting the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG) by means of one or more methods according to one or more of features 323 to 327; [2479] Reading back the stored manipulation resuLTs by means of a method according to one or more of features 386 to 407; [2480] reading out the state of the of the quantum dots (NV) of the quantum bits (QUB1, QUB2) of the quantum register (QUREG) and/or the quantum dot (NV) of the quantum bit (QUB) by means of a method according to one or more of features 418 to 419.

[2481] Quantum Hardware 425

Quantum Bus 425-440

[2482] Feature 425. Quantum Bus (QUBUS) [2483] with n quantum bits (QUB1 to QUBn), [2484] with n as a positive integer, with n≥2, [2485] with a first nuclear quantum bit (CQUB1), [2486] with an n-th nuclear quantum bit (CQUBn). [2487] wherein the n quantum bits (QUB1 to QUBn) can be numbered from 1 to n, [2488] wherein a j-th quantum bit (QUBj) is any one of these n quantum bits (QUB1 to QUBn) with 1<j<n, to be considered only if n>2, and [2489] wherein every j-th quantum bit (QUBj) has a predecessor quantum bit (QUB(j−1)) and [2490] wherein every j-th quantum bit (QUBj) has a successor quantum bit (QUB(j+1)) and [2491] wherein the first quantum bit (QUB1) forms with the first nuclear quantum bit (CQUB1) a first nucleus-electron quantum register (CEQUREG1) according to one or more of features 203 to 215 and [2492] wherein the n-th quantum bit (QUBn) forms with the n-th nuclear quantum bit (CQUBn) an n-th nucleus-electron quantum register (CEQUREGn) according to one or more of features 203 to 215 and [2493] wherein the first quantum bit (QUB1) forms a first electron-electron quantum register (QUREG1) with the second quantum bit (QUB2), and [2494] where the n-th quantum bit (QUBn) forms an (n−1)-th electron-electron quantum register (QUREG(n−1)) with the (n−1)-th quantum bit (QUB(n−1)), and [2495] wherein each of the other n−2 quantum bits, denoted hereafter as j-th quantum bit (QUBj) with 1<j<n when n>2, [2496] forms with its predecessor quantum bit (QU B(j−1)) a (j−1)-th quantum register (QUREG(j−1)) and [2497] with its successor quantum bit (QUB(j+1)) forms a j-th quantum register (QUREGj) [2498] resulting in a closed chain with two nucleus-electron quantum registers (CEQUREG1, CEQUREGn) and n−1 quantum registers (QUREG1 to QUREG(n−1)) between the first nuclear quantum bit (CQUB1) and the n-th nuclear quantum bit (CQUBn).

[2499] Feature 426. Quantum bus (QUBUS), in particular according to feature 225, [2500] with n quantum bits (QUB) to QUBn) each with one quantum dot (NV1 to NVn), [2501] with n as a positive integer, with n≥2, [2502] with a first nuclear quantum bit (CQUB1), [2503] with an n-th nuclear quantum bit (CQUBn), [2504] wherein the n quantum bits (QUB1 to QUBn) can be numbered from 1 to n, [2505] wherein a j-th quantum bit (QUBj) is any one of these n quantum bits (QUB1 to QUBn) with 1<j<n, to be considered only if n>2, and [2506] wherein every j-th quantum bit (QUBj) has a predecessor quantum bit (QUB(j−1)) and [2507] wherein every j-th quantum bit (QUBj) has a successor quantum bit (QUB(j+1)) and [2508] wherein the first quantum bit (QUB1) forms a first nucleus-electron quantum register (CEQUREG1) with the first nuclear quantum bit (CQUB1); and [2509] wherein the n-th quantum bit (QUBn) forms with the n-th nuclear quantum bit (CQUBn) an n-th nucleus-electron quantum register (CEQUREGn); and [2510] wherein the first quantum bit (QUB1) forms a first electron-electron quantum register (QUREG1) with the second quantum bit (QUB2); and [2511] wherein the n-th quantum bit (QUBn) forms an (n−1)-th electron-electron quantum register (QUREG(n−1)) with the (n−1)-th quantum bit (QUB(n−1)), and [2512] wherein each of the other n−2 quantum bits, hereafter referred to as the j-th quantum bit (QUBj) is 1<j<n when n>2, [2513] forms with its predecessor quantum bit (QUB(j−1)) a (j−1)-th quantum register (QUREG(j−1)) and [2514] with its successor quantum bit (QUB(j+1)) forms a j-th quantum register (QUREGj) [2515] resulting in a closed chain with two nucleus-electron quantum registers (CEQUREG1, CEQUREGn) and n−1 quantum registers (QUREG1 to QUREG(n−1)) between the first nuclear quantum bit (CQUB1) and the n-th nuclear quantum bit (CQUBn) and [2516] wherein the distance between the first nuclear quantum dot (CI1) and the first quantum dot (NV1) is small enough to allow coupling or entanglement of the state of the first quantum dot (NV1) and the state first nuclear quantum dot (CI1), and [2517] wherein the distance between the n-th nuclear quantum dot (CIn) and the n th quantum dot (NVn) is so small that coupling or entanglement of the state of the n-th quantum dot (NVn) and the state of the n-th nuclear quantum dot (CIn) is possible, and [2518] wherein the distance between a j-th quantum dot (NVj) and the (j+1)-th quantum dot is so small with 1≤j<n that coupling or entanglement of the state of the j-th quantum dot (NVj) and the state of the (j+1)-th quantum dot (NV(j+1)) is possible, [2519] characterized by, [2520] that the distance between the first nuclear quantum dot (CI1) and the n-th nuclear quantum dot (CIn) is such that coupling or entanglement of the state of the first nuclear quantum dot (CI1) and the state of the n-th nuclear quantum dot (CIn) is not possible, and [2521] that the distance between the first quantum dot (NV1) and the n-th quantum dot (NVn) is such that coupling or entanglement of the state of the first quantum dot (NV1) and the state of the n-th quantum dot (NVn) is not possible, and [2522] that the distance between the n-th nuclear quantum dot (CIn) and the first quantum dot (NV1) is such that coupling or entanglement of the state of the first quantum dot (NV1) and the state of the n-th nuclear quantum dot (CIn) is not possible, and [2523] that the distance between the first nuclear quantum dot (CI1) and the n-th quantum dot (NVn) is such that coupling or entanglement of the state of the n-th quantum dot (NVn) and the state first nuclear quantum dot (CI1) is not possible, and [2524] that each quantum bit of the n quantum bits (QUB1 to QUBn) has a device for selectively controlling the quantum dot of that quantum bit, and [2525] that each of the devices for selectively controlling the quantum dot of that quantum bit has a vertical line (LV) and a horizontal line (LV), respectively.

[2526] Feature 427. Quantum bus (QUBUS) according to feature 425 or feature 426, [2527] wherein the first nuclear quantum bit (CQUB1) comprises a first nuclear quantum dot (CI1); and [2528] wherein the n-th nuclear quantum bit (CQUBn) comprises an n-th nuclear quantum dot (CIn), and [2529] wherein the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) does not essentially directly affect the n-th nuclear quantum dot (CIn) of the n-th nuclear quantum bit (CQUBn) without the aid of an ancilla quantum bit and/or [2530] wherein the magnetic field and/or the state of the n-th nuclear quantum dot (CIn) of the n-th nuclear quantum bit (CQUBn) does not essentially directly affect the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) without the aid of an ancilla quantum bit, [2531] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2532] Feature 428. Quantum bus (QUBUS) according to one or more of the features 425 to 427, [2533] wherein the first nuclear quantum bit (CQUB1) comprises a first nuclear quantum dot (CI1); and [2534] wherein the n-th quantum bit (QUBn) comprises an n-th quantum dot (NVn), and [2535] wherein the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) does not essentially directly affect the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) without the aid of an ancilla quantum bit and/or [2536] wherein the magnetic field and/or the state of the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) does not essentially affect the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) directly without the aid of an ancilla quantum bit. [2537] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2538] Future 429. Quantum bus (QUBUS) according to one or more of the features 425 to 428, [2539] wherein the first quantum bit (QUB1) comprises a first quantum dot (NV1); and [2540] wherein the n-th nuclear quantum bit (CQUBn) comprises an n-th nuclear quantum dot (CIn), and [2541] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) does not essentially directly affect the n-th nuclear quantum dot (CIn) of the n-th nuclear quantum bit (CQUBn) without the aid of an ancilla quantum bit and/or [2542] wherein the magnetic field and/or the state of the n-th nuclear quantum dot (CIn) of the n-th nuclear quantum bit (CQUBn) essentially does not directly affect the first quantum dot (NV1) of the first quantum bit (QUB11 without the aid of an ancilla quantum bit, [2543] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2544] Feature 430. Quantum bus (QUBUS) according to one or more of the features 425 to 429, [2545] wherein the first quantum bit (QUB1) comprises a first quantum dot (NV1); and [2546] wherein the n-th quantum bit (CQUBn) comprises an n-th quantum dot (NVn), and [2547] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUB1) does not essentially directly affect the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) without the aid of an ancilla quantum bit and/or [2548] wherein the magnetic field and/or the state of the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) essentially does not directly affect the first quantum dot (NV1) of the first quantum bit (QUB1) without the aid of an ancilla quantum bit, [2549] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2550] Feature 431. Quantum bus according to feature 430, [2551] wherein the magnetic field and/or the state of the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) influences the first quantum dot (NV1) of the first quantum bit (QUB1) essentially indirectly by accessing quantum dots of the n quantum dots (NV1 to NVn) of the n quantum bits (QUB1 to QUBn) as ancilla quantum bits and/or [2552] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum bit (QUBn) influences the n-th quantum dot (NVn) of the n th quantum bit (QUBn) essentially indirectly by accessing quantum dots of the n quantum dots (NV1 to NVn) of then quantum bits (QUB1 to QUBn) as ancilla quantum bits.

[2553] Feature 432. Quantum Bus (QUBUS) [2554] with n quantum bits (QUB1 to QUBn), [2555] with n as a positive integer, [2556] with n≥2, [2557] with a first quantum ALU (QUALU1), [2558] with an n-th quantum ALU (QUALUn), [2559] wherein the n quantum bits (QUB1 to QUBn) can be numbered from 1 to n. [2560] wherein the first quantum bit (QUB1) is the quantum bit (QUB1) of the first quantum ALU (QUALU1) and [2561] wherein the n-th quantum bit (QUBn) is the quantum bit (QUBn) of the n-th quantum ALU (QUALUn) and [2562] wherein a j-th quantum bit (QUBj) is any one of these n quantum bits (QUB1 to QUBn) with 1<j<n, to be considered only if n>2, and [2563] wherein every j-th quantum bit (QUBj) has a predecessor quantum bit (QUB(j−1)) and [2564] wherein every j-th quantum bit (QUBj) has a successor quantum bit (QUB(j+1)) and [2565] wherein the first quantum bit (QUB1) forms a first electron-electron quantum register (QUREG1) with the second quantum bit (QUB2), and [2566] wherein the n-th quantum bit (QUBn) forms an (n−1)-th electron-electron quantum register (QUREG(n−1)) with the (n−1)-th quantum bit (QUB(n−1)), and [2567] wherein each of the other n−2 quantum bits, denoted hereafter as j-th quantum bit (QUBj) with 1<j<n when n>2. [2568] forms with its predecessor quantum bit (QUB(j−1)) a (j−1)-th quantum register (QUREG(j−1)) and [2569] with its successor quantum bit (QUB(j+1)) forms a j-th quantum register (QUREGj) [2570] resulting in a closed chain of n−1 quantum registers (QUREG1 to QUREG(n−1)) between the first nuclear quantum bit (CQUB1) and the n-th nuclear quantum bit (CQUBn).

[2571] Feature 433. Quantum bus (QUBUS) according to feature 432, [2572] wherein the first quantum ALU (QUALU1) comprises a first nuclear quantum dot (CI1), and [2573] wherein n-th quantum ALU (QUALUn) comprises an n-th nuclear quantum dot (CIn), and [2574] wherein the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first quantum ALU (QUALU1) does not essentially directly affect the n-th nuclear quantum dot (CIn) of the n-th quantum ALU (QUALUn) without the aid of an ancilla quantum bit and/or [2575] wherein the magnetic field and/or the state of the n-th nuclear quantum dot (CIn) of the n-th quantum ALU (QUALUn) does not essentially affect the first nuclear quantum dot (CI1) of the first quantum ALU (QUALU1) directly without the aid of an ancilla quantum bit, [2576] wherein “essentially” is to be understood here in such a way that the influencing that does take place is insignificant for the technical result in the majority of cases.

[2577] Feature 434. Quantum bus (QUBUS) according to one or more of the features 432 to 433 [2578] wherein the first quantum ALU (QUALU1) comprises a first nuclear quantum dot (CI1), and [2579] wherein the n-th quantum ALU (QUALUn) comprises an n-th quantum dot (NVn), and [2580] wherein the magnetic field and/or the state of the first nuclear quantum dot (CI1) of the first quantum ALU (QUALU1) does not essentially directly affect the n-th quantum dot (NVn) of the n-th quantum ALU (QUALUn) without the aid of an ancilla quantum bit and/or [2581] wherein the magnetic field and/or the state of the n-th quantum dot (NVn) of the n-th quantum ALU (QUALUn) does not essentially affect the first nuclear quantum dot (CI1) of the first quantum ALUs (QUALU1) directly without the aid of an ancilla quantum bit, [2582] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2583] Feature 435. Quantum bus (QUBUS) according to one or more of the features 425 to 434 [2584] wherein the first quantum ALU (QUALU1) comprises a first quantum dot (NV1), and [2585] wherein the n-th quantum ALU (QUALUn) comprises an n-th nuclear quantum dot (CIn), and [2586] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum ALU (QUALU1) does not essentially directly affect the n-th nuclear quantum dot (CIn) of the n-th quantum ALU (QUALUn) without the aid of an ancilla quantum bit and/or [2587] wherein the magnetic field and/or the state of the n-th nuclear quantum dot (CIn) of the n-th quantum ALU (QUALUn) does not essentially affect the first quantum dot (NV1) of the first quantum ALU (QUALU1) directly without the aid of an ancilla quantum bit, [2588] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2589] Feature 436. Quantum bus (QUBUS) according to one or more of the features 425 to 435, [2590] wherein the first quantum ALU (QUALU1) comprises a first quantum dot (NV1), and [2591] wherein the n-th quantum ALU (QUALUn) comprises an n-th quantum dot (NVn), and [2592] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum ALUs (QUALU1) does not essentially directly affect the n th quantum dot (NVn) of the n-th quantum ALU (QUALUn) without the aid of an ancilla quantum bit and/or [2593] wherein the magnetic field and/or the state of the n-th quantum dot (NVn) of the n-th quantum ALU (QUALUn) essentially does not directly affect the first quantum dot (NV1) of the first quantum ALU (QUALU1) without the aid of an ancilla quantum bit, [2594] wherein “essentially” is to be understood here as meaning that the influence that may nevertheless take place is insignificant for the technical result in the majority of cases.

[2595] Feature 437. Quantum bus (QUBUS) according to feature 436, [2596] wherein the magnetic field and/or the state of the n-th quantum dot (NVn) of the n-th quantum ALU (QUALUn) influences the first quantum dot (NV1) of the first quantum ALU (QUB1) essentially indirectly by accessing quantum dots of the n quantum dots (NV1 to NVn) of the n quantum bits (QUB1 to QUBn) as ancilla quantum bits and/or [2597] wherein the magnetic field and/or the state of the first quantum dot (NV1) of the first quantum ALU (QUALU1) influences the n-th quantum dot (NVn) of the n-th quantum ALU (QUBn) essentially indirectly by accessing quantum dots of the n quantum dots (NV1 to NVn) of the a quantum bits (QUB1 to QUBn) as ancilla quantum bits.

[2598] Feature 438. Quantum bus (QUBUS) according to one or more of features 425 to 437, [2599] wherein the quantum bus has linear sections (FIG. 27) and/or a branch (FIG. 29) and/or a kink (FIG. 28) or a loop (FIG. 30).

[2600] Feature 439. Quantum bus (QUBUS) according to one or more of the 425 to 438 [2601] wherein the quantum bus is provided with means (HD1 to HDn, HS1 to HSn, and HD1 to VDn, VS1 to VSn, CBA, CBB, μC, LH1, LH2, LH3, LH4 to LHn, LV1 to LVm, SH1, SH2, SH3, SH4 to SH(n+1), SV1 to SV(m+1)), in order to determine the spin of the electron configuration of the n-th quantum dot (NVn) of the n-th Quantum ALU (QUALUn) and/or the nuclear spin of a nuclear quantum dot (CIn) of the n-th quantum ALU (QUALUn) as a function of the electron configuration of the first quantum dot (NV1) of the first quantum ALU (QUALU1) and/or to change the nuclear spin of a nuclear quantum dot (CI1) of the first quantum ALU (QUALUn) by means of quantum bits of the n quantum bits (QUB1 to QUBn).

[2602] Feature 440. Quantum bus (QUBUS) according to one or more of the features 425 to 439 [2603] wherein the quantum bus is provided with means (HD1 to HDn, HS1 to HSn, and HD1 to VDn, VS1 to VSn, CBA, CBB, MC, LH1, LH2, LH3, LH4 to LHn, LV1 to LVm, SH1, SH2, SH3, SH4 to SH(n+1), SV1 to SV(m+1)), [2604] to detune individual or multiple quantum bits of the quantum bits (QUB1 to QUBn) of the quantum bus (QUBUS) such that a resonance frequency of the resonance frequencies of these quantum bits no longer matches the corresponding stored resonance frequency, [2605] wherein the other quantum bits typically then still have this stored resonance frequency, and [2606] wherein this detuning of the resonance frequency occurs in one or more of the following ways: [2607] um by means of electrical DC potentials on vertical lines of the m vertical lines (LV1 to LVm) and/or [2608] um by means of equal triangulation of the vertical currents in vertical lines of the m vertical lines (LV1 to LVm) and/or [2609] urn by means of electrical DC potentials on horizontal lines of the n horizontal lines (LH1 to LHn) and/or [2610] um by means of equal triangular parts of the horizontal currents in horizontal lines of the n horizontal lines (LH1 to LHn). [2611] (Note: In FIG. 23, m=1 is selected).

Quantum Network

[2612] Feature 441. Quantum network (QUNET) characterized in that. [2613] that it comprises at least two different interconnected quantum buses (QUBUS), in particular according to one or more of the features 425 to 440.

[2614] Feature 442. Quantum network (QUNET) according to feature 441, [2615] wherein the quantum network (QUNET) comprises a first quantum bus (QUBUS1); and [2616] wherein the quantum network (QUNET) comprises a second quantum bus [2617] (QUBUS2), and [2618] wherein the first quantum bus (QUBUS1) comprises a first quantum bit (QUB1) having a first quantum dot (NV1); and [2619] wherein the second quantum bus (QUBUS2) comprises an n-th quantum bit (QUBn) having an n-th quantum dot (NVn); and [2620] wherein the first quantum bus ((QUBUS1)) and/or the second quantum bus (QUBUS2) comprise at least one further j-th quantum bit (QUBj) having a further, j-th quantum dot (NVj), and [2621] wherein the first quantum dot (NV1) can be coupled or entangled with the n th quantum dot (NVn) only with the aid of the at least one, further j-th quantum dot (NVj) of the at least one, further j-th quantum bit (QUBj) as an ancilla quantum bit, and [2622] wherein the first quantum dot (NV1) can be coupled or entangled with the n-th quantum dot (NVn) without such assistance of the at least one, further j-th quantum dot (NVj) of the at least one, further j-th quantum bit (QUBj) as an ancilla quantum bit only with a low probability. i.e., essentially not. [2623] so that in this way the at least one, further j-th quantum dot (NVj) of the at least one, further j-th quantum bit (QUBj) connects the first quantum bus ((QUBUS1)) to the second quantum bus (QUBUS2) by this indirect coupling/entanglement possibility via this at least one ancilla quantum bit.

Quantum Bus Operation

[2624] Feature 443. Method for exchanging, in particular spin-exchanging, the quantum information, in particular the spin information, of the j-th quantum dot (NVj) of a j-th quantum bit (QUBj) with the quantum information, in particular the spin information, of the (j+1)-th quantum dot (NV(j+1)) of the subsequent (j+1)-th quantum bit (QUB(j+1)) of a quantum bus (QUBUS) according to one or more features of the features 425 to 440 [2625] performing an ELEKTRON-ELEKTRON-CNOT operation according to feature 420 [2626] with the j-th quantum bit (QUBj) as the first quantum bit (QUB1) of the ELEKTRON-ELEKTRON-CNOT operation according to feature 420 and [2627] with the (j+1)-th quantum bit (QUB(j+1)) as the second quantum bit (QUB2) of the ELEKTRON-ELEKTRON-CNOT operation according to feature 420.

[2628] Feature 444. Method for entangling the first quantum dot (NV1) of the first quantum bit (QUB1) with the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of a quantum bus (QUBUS) according to one or more features of features 425 to 440 [2629] performing an electron-nucleus exchange operation, in particular according to one or more of features 386 to 402, in particular a nucleus-electron-ENTANGLEMENT operation according to feature 400 and/or 401: [2630] with the first quantum bit (QUB1) as the quantum bit (QUB) of the said electron-nucleus exchange operation, and [2631] with the first nuclear quantum bit (CQUB1) as the nuclear quantum bit (CQUB) of said electron-nucleus exchange operation.

[2632] 11308) Feature 445. Method for entangling the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) with the n-th nuclear quantum dot (CIn) of the n-th nuclear quantum bit (CQUBn) of a quantum bus (QUBUS) according to one or more features of features 425 to 440 [2633] performing an electron-nucleus exchange operation, in particular according to one or more of features 386 to 402, in particular a nucleus-electron-ENTANGLEMENT operation according to feature 400 and/or 401: [2634] with the n-th quantum bit (QUBn) as the quantum bit (QUB) of said electron-nucleus exchange operation, and [2635] with the n-th nuclear quantum bit (CQUBn) as the nuclear quantum bit (CQUB) of said electron-nucleus exchange operation.

[2636] Feature 446. Method for entangling the first nuclear quantum bit (CQUB1) with the n-th nuclear quantum bit (CQUBn) of a quantum bus (QUBUS) according to one or more features of features 425 to 440 [2637] if necessary, preceding erasure of the n quantum bits (QUB1 to QUBn) of the quantum bus (QUBUS), in particular by means of one or more methods according to feature 323 and/or feature 324 for initialization of the quantum bus (QUBUS); [2638] subsequent entanglement of the first quantum dot (NV1) of the first quantum bit (QUB1) with the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of the quantum bus (QUBUS), in particular by using a method according to feature 444, [2639] then repeating the following step until all n−1 quantum dots (NV2 to NVn) are entangled with their predecessor quantum dot (NV1 to NV(n−1)), [2640] wherein the following step is the interleaving of the j-th quantum dot (NVj) of a j-th quantum bit (QUBj) with the (j+1)-th quantum dot (NV(j+1)) of the following (j+1)-th quantum bit (QUB(j+1)) of the quantum bus (QUBUS), in particular according to a method according to feature 443 and wherein in the first application of this step j=1 is selected and wherein in the subsequent applications of this step until the previously named loop termination condition of j=n is reached the new index j=j+1 is selected; [2641] subsequent entanglement of the n-th quantum dot (NVn) of the n-th quantum bit (QUBn) with the n-th nuclear quantum dot (CIn) of the n-th nuclear quantum bit (CQUBn) of the quantum bus (QUBUS), in particular by using a method according to feature 445.

[2642] Feature 447. Method for entangling the first nuclear quantum bit (CQUB1) with the n-th nuclear quantum bit (CQUBn) of a quantum bus (QUBUS) according to one or more features of features 425 to 440 and according to feature 446 [2643] performing a procedure according to feature 446 [2644] then repeating the following step until all n−1 quantum dots (NV2 to NVn) are entangled with their predecessor quantum dot (Nv1 to NV(n−1)), [2645] wherein the following step is the spin exchange of the j-th quantum dot (NVj) of a j-th quantum bit (QUBj) with the (j+1)-th quantum dot (NV(j+1)) of the following (j+1)-th quantum bit (QUB(j+1)) of the quantum bus (QUBUS), in particular according to a method according to feature 443 and wherein in the first application of this step j=n is selected and wherein in the subsequent applications of this step until the previously named loop termination condition of j=1 is reached the new index j=j−1 is selected; [2646] subsequent spin exchange of the first quantum dot (NV1) of the first quantum bit (QUB1) with the first nuclear quantum dot (CI1) of the first nuclear quantum bit (CQUB1) of the quantum bus (QUBUS), in particular by using a method according to feature 444.

[2647] Feature 448. Method for entangling the first nuclear quantum bit (CQUB1) with the n-th nuclear quantum bit (CQUBn) of a quantum bus (QUBUS) according to one or more features of features 425 to 440 and according to feature 446 and/or and according to feature 447 [2648] performing a procedure according to feature 446 [2649] if necessary, perform a procedure according to feature 447 [2650] final erasure of the n quantum bits (QUB1 to QUBn) of the quantum bus (QUBUS), in particular by means of a method according to feature 323 and/or feature 324, to neutralize the quantum bus (QUBUS).

[2651] Feature 449. Method for entangling the first nuclear quantum bit (CQUB1) with the n-th nuclear quantum bit (CQUBn) of a quantum bus (QUBUS) according to one or more features of features 425 to 440 [2652] if necessary, preceding erasure of the n quantum bits (QUB1 to QUBn) of the quantum bus (QUBUS), in particular by means of a method according to feature 323 and/or feature 324 for initialization of the quantum bus (QUBUS); [2653] if necessary, preceding erasure of the first nuclear quantum bit (CQUB1), in particular by means of a method according to one or more of features 325 to 327; [2654] if necessary, preceding erasure of the n-th nuclear quantum bit (CQUBn), in particular by means of a method according to one or more of features 325 to 327; [2655] if necessary, preceding repeated erasure of the first quantum bit (QUB1) and of the n-th quantum bit up to QUBn) of the quantum bus (QUBUS), in particular by means of one or more methods according to feature 323 and/or feature 324 for initialization of the quantum bus (QUBUS); [2656] performing a Hadamard gate, in particular according to one or more of features 328 to 333 with the first quantum bit (QUB1) as quantum bit (QUB) of said Hadamard gate, and [2657] performing an ELECTRON-NUCLEUS CNOT operation, in particular according to one or more of features 391 to 395 with the first quantum bit (QUB1) and the first nuclear quantum bit (CQUB1), and [2658] repeating the following step until all n−1 quantum dots (NV2 to NVn) are entangled with their predecessor quantum dot (NV1 to NV(n−1)). [2659] wherein the following step comprises entangling the j-th quantum dot (NVj) of a j-th quantum bit (QUBj) with the (j+1)-th quantum dot (NV(j+1)) of the subsequent (j+1)-th quantum bit (QUB(j+1)) of the quantum bus (QUBUS), in particular by means of an ELECTRON-ELECTRON-CNOT according to one or more of the features 420 to 421, and wherein, in particular in the first application of this step, j=1 is selected and wherein then, in particular in the subsequent applications of this step, the new index j=j+1 is selected until the aforementioned loop termination condition of j=n is reached; [2660] performing an ELECTRON-NUCLEUS CNOT operation, in particular according to one or more of features 391 to 395 with the n-th quantum bit (QUBn) and the n-th nuclear quantum bit (CQUBn).

Quantum Computer 450-468

[2661] Feature 450. Device characterized in that, [2662] that it comprises at least one control device (μC) and [2663] in that it comprises at least one light source (LED), which may in particular be an LED and/or a laser and/or a tunable laser, and [2664] in that it comprises at least one light source driver (LEDDR), and [2665] that it comprises at least one of the following quantum-based sub-devices such as [2666] a quantum bit (QUB), in particular according to one or more of the features 1 to 102 and/or [2667] a quantum register (QUREG), in particular according to one or more of the features 222 to 235 and/or [2668] a nucleus-electron quantum register (CEQUREG), in particular according to one or more of the features 203 to 215 and/or [2669] a nucleus-electron-nucleus-electron quantum register (CECEQUREG), in particular according to one or more of features 272 to 278 and/or [2670] comprises an arrangement of quantum dots (NV), in particular according to one of the features 279 to 286 and/or [2671] a quantum bus (QUBUS), in particular according to one or more features of features 425 to 440, [2672] includes and [2673] in that the light source (LED) is temporarily supplied with electrical energy by the light source driver (LEDDR) as a function of a control signal from the control device (μC), and [2674] that the light source (LED) is suitable and intended to reset, in particular by means of one or more methods according to one or more of the features 323 to 327 least a part of the quantum dots (NV).

[2675] Feature 451. Device characterized in that, [2676] in that it comprises at least one circuit and/or semiconductor circuit and/or CMOS circuit, and [2677] that it comprises at least one of the following quantum-based sub-devices such as [2678] a quantum bit (QUB), in particular according to one or more of the features 1 to 102 and/or [2679] a quantum register (QUREG), in particular according to one or more of the features 222 to 235 and/or [2680] a nucleus-electron quantum register (CEQUREG), in particular according to one or more of the features 203 to 215 and/or [2681] a nucleus-electron-nucleus-electron quantum register (CECEQUREG), in particular according to one or more of features 272 to 278 and/or [2682] an arrangement of quantum dots (NV), in particular according to any one of features 279 to 286, and/or [2683] a quantum bus (QUBUS), in particular according to one or more features of features 425 to 440, [2684] includes and [2685] in that the at least one circuit and/or semiconductor circuit and/or CMOS circuit has means which, individually or as a plurality in combination, are set up and suitable for carrying out at least one of the processes, in particular according to features 298 to 424 of the process groups [2686] Electron-nucleus exchange operation, [2687] Quantum bit reset method, [2688] Nucleus-electron quantum register reset method, [2689] Quantum bit microwave actuation method, [2690] Nucleus-electron quantum register radio wave controlling method, [2691] Nuclear quantum bit radio wave drive method, [2692] Nucleus-nuclear quantum register radio wave controlling method, [2693] selective quantum bit gating, selective quantum register gating, [2694] Quantum Bit Assessment, [2695] Quantum computing result extraction, [2696] Quantum Computing [2697] and/or, [2698] in particular as a method according to features 443 to 446, a quantum bus operation [2699] to execute.

[2700] Feature 452. Device, in particular a quantum computer, [2701] with at least one control device (μC), in particular a circuit and/or semiconductor circuit and/or CMOS circuit, and [2702] having at least one of the following quantum-based sub-devices such as [2703] a quantum bit (QUB), in particular according to one or more of the features 1 to 102 and/or [2704] a quantum register (QUREG), in particular according to one or more of the features 222 to 235 and/or [2705] a nucleus-electron quantum register (CEQUREG), in particular according to one or more of the features 203 to 215 and/or [2706] a nucleus-electron-nucleus-electron quantum register (CECEQUREG), in particular according to one or more of features 272 to 278 and/or [2707] a quantum ALU (QUALU) according to one or more of the features 220 to 221 and/or [2708] an arrangement of quantum dots (NV), in particular according to one of the features 279 to 286, and/or [2709] a quantum bus (QUBUS), in particular according to one or more features of features 425 to 440, [2710] includes and [2711] the control device (μC) having means which, individually or in groups of several, are set up and suitable for carrying out at least one of the processes, in particular according to features 298 to 424, of the groups of processes [2712] Electron-nucleus exchange operation. [2713] Quantum bit reset method. [2714] Nucleus-electron quantum register reset method, [2715] Quantum bit microwave controlling method, [2716] Nucleus-electron quantum register radio wave controlling method. [2717] Nuclear quantum bit radio wave drive method, [2718] Nucleus-nuclear quantum register radio wave controlling method [2719] selective quantum bit controlling method, selective quantum register controlling method, [2720] Quantum bit evaluation, [2721] Quantum computer result extraction. [2722] Quantum Computing [2723] and/or [2724] in particular as a method according to features 443 to 446, a quantum bus operation [2725] to execute and [2726] wherein the device comprises a magnetic field control (MFC) with at least one magnetic field sensor (MFS) and at least one actuator, in particular a magnetic field control device (MFK), to stabilize the magnetic field in the area of the device by active control and [2727] Whereby in particular the magnetic field control (MFC) is a part of the control device (μC) or is controlled by the control device (μC).

[2728] Feature 453. Quantum computer (QUC), in particular according to one or more of features 4.30 to 452, [2729] wherein the quantum computer (QUC) comprises a control device (μC); and [2730] wherein the control device (MC) is suitable and arranged for this purpose, [2731] in that the control device (μC) receives commands and/or codes and/or code sequences via a data bus (DB), and [2732] in that the control device (μC) initiates and/or controls the execution of at least one of the following quantum operations by the quantum computer (QUC) as a function of these received instructions and/or received codes and/or received code sequences: MFMW, MFMWEE, MFMWCE, MFRWCC, FRWCC, RESQB, RESQBR, RESQRCE, MQBP, MCBP, SMQB, KQBQB, KQBCB, CNQBCBA, CNQBCBB, CNQBCBC, VQB, SCNQB.

IC for Quantum Computers 454

[2733] Feature 454. Circuit and/or semiconductor circuit and/or CMOS circuit, in particular for a device according to one or more of features 450 to 451, [2734] that it comprises at least one control device (μC) and [2735] in that it comprises means which are suitable and/or provided for controlling at least one of the following quantum-based sub-devices with a first quantum bit (QUB1) to be driven, namely [2736] a quantum bit (QUB) according to one or more of the features 1 to 102 and/or [2737] a quantum register (QUREG) according to one or more of features 222 to 235 and/or [2738] a nucleus-electron quantum register (CEQUREG) according to one or more of the features 203 to 219 and/or [2739] A nucleus-electron-nucleus-electron quantum register (CECEQUREG) according to one or more of features 272 to 278 and/or [2740] a quantum ALU according to one or more of the features 220 to 221 and/or [2741] an arrangement of quantum dots (NV) according to any one of features 279 to 286 and/or [2742] a quantum bus (QUBUS) according to one or more features of features 425 to 440, [2743] wherein it comprises a first horizontal driver stage (HD1) for controlling the first quantum bit (QUB1) to be driven, and [2744] wherein it comprises a first horizontal receiver stage (HS1), which may form a unit with the first horizontal driver stage (HD1), for controlling the first quantum bit (QUB1) to be driven, and [2745] wherein it comprises a first vertical driver stage (VD1) for controlling the first quantum bit (QUB1) to be driven, and [2746] wherein it comprises a first vertical receiver stage (VS1), which may form a unit with the first vertical driver stage (VD), for controlling the first quantum bit (QUB1) to be driven.

[2747] Feature 455. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 454 [2748] wherein the first horizontal driver stage (HD1) and the first horizontal receiver stage (HS1) drive the first quantum bit (QUB1) to be driven via the first horizontal line (LH1) of the first quantum bit (QUB1), and [2749] wherein the first vertical driver stage (VD1) and the first vertical receiver stage (VS1) drive the first quantum bit (QUB1) to be driven via the first vertical line (LV1) of the first quantum bit (QUB1).

[2750] Feature 456. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 455, [2751] wherein the first horizontal driver stage ((HD1)) injects the first horizontal current (IH1) into the first horizontal line (LH1) of the first quantum bit (QUB1), and [2752] wherein the first vertical driver stage (VD1) injects the first vertical current (IV1) into the first vertical line (LV1) of the first quantum bit (QUB1).

[2753] Feature 457. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 456, [2754] wherein the first horizontal current (IH1) has a first horizontal current component with a first horizontal modulation with a first frequency (f) and [2755] wherein the first vertical current (IV1) has a first vertical current component with a first vertical modulation with the first frequency (f), and [2756] wherein the first vertical modulation of the first vertical current component of the first vertical current (IV1) is at least temporarily out of phase with respect to the first horizontal modulation of the first horizontal current component of the first horizontal current (IH1) by a first temporal phase offset of essentially +/−π/2 of the frequency (f).

[2757] Feature 458. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 457, [2758] wherein the first horizontal current component of the first horizontal current (IH1) is pulsed with a first horizontal current pulse having a first pulse duration (τ.sub.PI), and [2759] wherein the first vertical current component of the first vertical current (IV1) is pulsed with a first vertical current pulse having the first pulse duration (τ.sub.PI).

[2760] Feature 459. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 458, [2761] whereby the first vertical current pulse is out of phase with respect to the first horizontal current pulse by the first phase offset in time.

[2762] Feature 460. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 459, [2763] whereby the first vertical current pulse is phase shifted in time by the first phase offset of +/−π/2 of the frequency (f) with respect to the first horizontal current pulse.

[2764] Feature 461. Circuit and/or semiconductor circuit and/or CMOS circuit according to one or more of the features 457 to 460, [2765] where the first frequency (f) is effective at one of the following frequencies: [2766] a nucleus-electron microwave resonance frequency (f.sub.MWCE) or [2767] an electron-nucleus radio wave resonance frequency (f.sub.RWEC) or [2768] an electron1-electron1 microwave resonance frequency (f.sub.MW) or [2769] an electron1-electron2 microwave resonance frequency (f.sub.MWEE) or [2770] of a nucleus-nucleus radio wave resonance frequency (f.sub.RWCC).

[2771] Feature 462. Circuit and/or semiconductor circuit and/or CMOS circuit according to one or more of the features 458 to 461, [2772] wherein the first pulse duration τ.sub.P corresponds at least temporarily to an integer multiple of π/4 of the period τ.sub.RCE of the Rabi oscillation of the nucleus-electron Rabi oscillation, if the first frequency (f) is effectively equal to a nucleus-electron microwave resonance frequency (f.sub.MWCE) and/or [2773] wherein the first pulse duration τ.sub.P corresponds at least temporarily to an integer multiple of π/4 of the period τ.sub.REC of the Rabi oscillation of the electron-nucleus Rabi oscillation, if the first frequency (f) is effectively equal to an electron-nucleus radio wave resonance frequency (f.sub.RWEC) and/or [2774] wherein the first pulse duration τ.sub.P corresponds at least temporarily to an integer multiple of π/4 of the period τ.sub.R of the Rabi oscillation of the electron1-electron1 Rabi oscillation, if the first frequency (f) is effectively equal to an electron1-electron1 microwave resonance frequency (f.sub.MW) and/or [2775] wherein the first pulse duration τ.sub.P corresponds at least temporarily to an integer multiple of π/4 of the period τ.sub.REE of the Rabi oscillation of the electron1-electron2 Rabi oscillation, if the first frequency (f) is effectively equal to an electron1-electron2 microwave resonance frequency (f.sub.MWEE) and/or [2776] wherein the first pulse duration τ.sub.P corresponds, at least temporarily, to an integer multiple of π/4 of the period τ.sub.RCC of the Rabi oscillation of the nucleus-nucleus Rabi oscillation when the first frequency (f) is effectively equal to a nucleus-nucleus radio wave resonance frequency (f.sub.RWCC).

[2777] Feature 463. Circuit and/or semiconductor circuit and/or CMOS circuit according to one or more of the features 454 to 462, in particular for a device according to one or more of the features 450 to 451, [2778] wherein it comprises a second horizontal driver stage (HD2) for controlling a two-quantum bit to be driven (QUB2), and [2779] wherein it comprises a second horizontal receiver stage (HS2), which may be integral with the second horizontal driver stage (HD2), for controlling the second quantum bit (QUB2) to be driven.

[2780] Feature 464. Circuit and/or semiconductor circuit and/or CMOS circuit according to one or more of the features 454 to 463, in particular for a device according to one or more of the features 450 to 451, [2781] wherein it comprises a second vertical driver stage (VD2) for controlling a two-quantum bit (QUB2) to be driven, and [2782] wherein it comprises a second vertical receiver stage (VS2), which may form a unit with the second vertical driver stage (VD2), for controlling the second quantum bit (QUB2) to be driven.

[2783] Feature 465. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 463, in particular for a device according to one or more of features 450 to 453, [2784] wherein the first vertical driver stage (VD1) is used to drive the second quantum bit (QUB2) to be driven, and [2785] wherein the first vertical receiver stage (VS1) is used to drive the second quantum bit (QUB2) to be driven.

[2786] Feature 466. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 464, in particular for a device according to one or more of features 450 to 453, [2787] wherein the first horizontal driver stage (HD1) is used to drive the second quantum bit (QUB2) to be driven, and [2788] wherein the first horizontal receiver stage (HS1) is used to drive the second quantum bit (QUB2) to be driven.

[2789] Feature 467. Circuit and/or semiconductor circuit and/or CMOS circuit according to one or more of the features 454 to 466, in particular for a device according to one or more of the features 450 to 453, [2790] wherein the first horizontal driver stage (HD1) injects a first horizontal DC current component as a further horizontal current component into the first horizontal line (LH1) and/or [2791] wherein the magnitude of the first horizontal DC component can be 0A and [2792] wherein the second horizontal driver stage (HD2) injects a second horizontal DC current component as a further horizontal current component into the second horizontal line (LH2) and/or [2793] wherein the magnitude of the second horizontal DC component can be 0A and [2794] wherein the first vertical driver stage (VD1) injects a first vertical DC current component as a further vertical current component into the first vertical line (LV1) and/or [2795] wherein the magnitude of the first vertical DC component can be 0A and [2796] whereby the second vertical driver stage (HD2) injects a second vertical DC current component as a further vertical current component into the second vertical line (LV2), [2797] wherein the magnitude of the second vertical DC component can be 0A.

[2798] Feature 468. Circuit and/or semiconductor circuit and/or CMOS circuit according to feature 467, [2799] wherein the first horizontal DC component and/or the second horizontal DC component and/or the first vertical DC component and/or the second vertical DC component may be so adjusted, [2800] that the first nucleus-electron microwave resonance frequency (f.sub.MWCE1) of a first nucleus-electron quantum register (CEQUREG1) of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) differs from the second nucleus-electron microwave resonance frequency (f.sub.MWCE2) of a second nucleus-electron quantum register (CEQUREG2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG), or [2801] that the first electron-nucleus radio wave resonance frequency (f.sub.RWEC1) of a first nucleus-electron quantum register (CEQUREG1) of a nucleus-electron-nucleus-electron quantum register (CECEQUREG) differs from the second electron-nucleus radio wave resonance frequency (f.sub.RWEC2) of a second nucleus-electron quantum register (CEQUREG2) of the nucleus-electron-nucleus-electron quantum register (CECEQUREG); or [2802] that the first electron1-electron1 microwave resonance frequency (f.sub.MW1) of a first quantum bit (QUB1) of a quantum register (QUREG) differs from the second electron1-electron1 microwave resonance frequency (f.sub.MW2) of a second quantum bit (QUB2) of the quantum register (QUREG).

[2803] Manufacturing Processes 469-473

[2804] Feature 469. Method for producing a quantum register (QUREG) and/or a quantum bit (QUB) and/or an array of quantum dots and/or an array of quantum bits [2805] with the steps [2806] providing a substrate (D), in particular a diamond or a silicon crystal or a silicon carbide crystal or a mixed crystal of elements of the IV, Main group; [2807] if necessary, application of an epitaxial layer (DEP1), if necessary, already with a doping corresponding to the material of the substrate (D), in particular, if necessary, in the case of diamond with a sulfur doping and/or an n-doping; [2808] if the substrate (D) or the epitaxial layer (DEP1) are not suitably doped—in the case of diamond not n- or sulfur-doped, implantation of suitable dopants, in particular in the case of diamond of sulfur and/or of dopants for n-doping at least parts of the substrate (D) or at least parts of the epitaxial layer (DEP1) and cleaning and healing of the radiation damage; [2809] Deterministic single ion implantation, in particular in the case of diamond as the material of the substrate (D) or the epitaxial layer (DEP1) of nitrogen in diamond, for the production of paramagnetic centers as quantum dots (NV) in predetermined areas of the substrate (D) or the epitaxial layer (DEP1), in particular for the production of [2810] of NV centers as quantum dots (NV) in predetermined regions of a diamond serving as substrate (D) and/or as epitaxial layer (DEP1) and/or [2811] of SiV centers as quantum dots (NV) in predetermined areas of a diamond serving as substrate (D) and/or as epitaxial layer (DEP1) and/or [2812] of GeV centers as quantum dots (NV) in predetermined regions of a diamond serving as substrate (D) and/or as epitaxial layer (DEP1) and/or [2813] of SnV centers as quantum dots (NV) in predetermined areas of a diamond serving as substrate (D) and/or as epitaxial layer (DEP1) and/or [2814] of PbV centers as quantum dots (NV) in predetermined areas of a diamond serving as substrate (D) and/or epitaxial layer (DEP1) and/or of G centers as quantum dots (NV) in predetermined regions of a silicon material serving as substrate (D) and/or as epitaxial layer (DEP1), in particular of a silicon crystal, and/or [2815] of V.sub.Si centers as quantum dots (NV) in predetermined regions of a silicon carbide material, in particular a silicon carbide crystal, serving as substrate (D) and/or as epitaxial layer (DEP1), and/or [2816] of DV centers as quantum dots (NV) in predetermined areas of a silicon carbide material serving as substrate (D) and/or as epitaxial layer (DEP1), in particular of a silicon carbide crystal, and/or [2817] of V.sub.CV.sub.SI centers as quantum dots (NV) in predetermined regions of a silicon carbide material, in particular a silicon carbide crystal, serving as substrate (D) and/or as epitaxial layer (DEP1), and/or [2818] of CAV.sub.Si centers as quantum dots (NV) in predetermined regions of a silicon carbide material serving as substrate (D) and/or as epitaxial layer (DEP1), in particular of a silicon carbide crystal, and/or [2819] of N.sub.CV.sub.Si centers as quantum dots (NV) in predetermined regions of a silicon carbide material serving as substrate (D) and/or as epitaxial layer (DEP1), in particular of a silicon carbide crystal and/or [2820] of paramagnetic centers as quantum dots (NV) in predetermined regions of a mixed crystal serving as substrate (D) and/or as epitaxial layer (DEP1) of one or more elements of the IV. Main Group of the Periodic Table: [2821] Cleaning and temperature treatment; [2822] Measure the function, position and T2 times of the implanted single atoms and repeat the two previous steps if necessary; [2823] making ohmic contacts to the substrate (D) or to the epitaxial layer (DEP1); [2824] making the horizontal lines (LH1, LH2, LH3) and, if necessary, the horizontal shielding lines (SH1, SH2, SH3, SH4); [2825] depositing an insulation (IS) and opening the vias; [2826] if necessary, production of the contact dopants, in particular by ion implantation if necessary: [2827] making the vertical lines (LV1, LV2, LV3) and, if necessary, the vertical shielding lines (SV1, SV2, SV3, SV4);

[2828] Feature 470. Method of fabricating a nucleus-electron quantum register (CEQUREG) and/or a quantum bit (QUB) together with a nuclear quantum bit (CQUB) and/or an array of quantum dots (NV) together with an array of nuclear quantum dots (CI) and/or an array of quantum bits (QUB) together with an array of nuclear quantum bits (CQUB) [2829] with the steps [2830] providing a substrate (D), in particular a diamond or a silicon crystal or a silicon carbide crystal or a mixed crystal of elements of the IV, Main group: [2831] if necessary, application of an epitaxial layer (DEP1), if necessary, already with a doping corresponding to the material of the substrate (D), in particular, if necessary, in the case of diamond with a sulfur doping and/or an n-doping; [2832] insofar as the substrate (D) or the epitaxial layer (DEP1) are not suitably doped—in the case of diamond not n- or sulfur-doped—implantation of suitable dopants, in particular in the case of diamond of sulfur and/or of dopants for n-doping, at least of parts of the substrate (D) or at least of parts of the epitaxial layer (DEP1) and cleaning and healing of the radiation damage; [2833] Deterministic single ion implantation of predetermined isotopes, in particular in the case of diamond as the material of the substrate (D) or of the epitaxial layer (DEP1) of .sup.15N nitrogen in diamond, for the production of paramagnetic centers as quantum dots (NV) and for the simultaneous production of nuclear quantum dots (CI) in predetermined areas of the substrate (D) or of the epitaxial layer (DEP1), in particular in the case of diamond as the material of the substrate (D) or of the epitaxial layer (DEP1) for the production of NV centers as quantum dots (NV) with nitrogen atoms as nuclear quantum dots (CI), in predetermined regions of the substrate (D) or of the epitaxial layer (DEP1); [2834] Cleaning and temperature treatment; [2835] If necessary, measure the function, position and T2 times of the implanted single atoms and repeat the two preceding steps if necessary; [2836] making ohmic contacts to the substrate (D) or to the epitaxial layer (DEP1); [2837] making the horizontal lines (LH1, LH2, LH3) and, if necessary, the horizontal shielding lines (SH1, SH2, SH3, SH4); [2838] deposit at least one insulation (IS) and open the vias; [2839] making the vertical lines (LV1, LV2, LV3) and, if necessary, the vertical shielding lines (SV1, SV2, SV3, SV4):

[2840] Feature 471. Method of fabricating a nucleus-electron quantum register (CEQUREG) and/or a quantum bit (QUB) together with a nuclear quantum bit (CQB) and/or an array of quantum dots (NV) together with an array of nuclear quantum dots (CI) and/or an array of quantum bits (QUB) together with an array of nuclear quantum bits (CQUB) [2841] with the steps [2842] providing a substrate (D), in particular a diamond or a silicon crystal or a silicon carbide crystal or a mixed crystal of elements of the IV, Main group; [2843] if necessary, application of an epitaxial layer (DEP1), if necessary, already with a doping corresponding to the material of the substrate (D), in particular, if necessary, in the case of diamond with a sulfur doping and/or n-doping: [2844] if the substrate (D) or the epitaxial layer (DEP1) are not suitably doped—in the case of diamond not n- or sulfur-doped, implantation of suitable dopants, in particular in the case of diamond of sulfur and/or of dopants for n-doping at least parts of the substrate (D) or at least parts of the epitaxial layer (DEP1) and cleaning and healing of the radiation damage; [2845] Deterministic single ion implantation of predetermined isotopes, in particular in the case of diamond as the material of the substrate (D) or of the epitaxial layer (DEP1) of .sup.14N-nitrogen and/or .sup.15N-nitrogen in diamond, for the production of paramagnetic centers as quantum dots (NV) in predetermined areas of the substrate (D) or of the epitaxial layer (DEP1), in particular in the case of diamond as the material of the substrate (D) or of the epitaxial layer (DEP1), for producing NV centers as quantum dots (NV) in predetermined regions of the substrate (D) or of the epitaxial layer (DEP1); [2846] Deterministic single ion implantation of predetermined isotopes with magnetic moment of the atomic nucleus, in particular. [2847] in the case of diamond or silicon carbide of .sup.13C-carbon or [2848] in the case of silicon from .sup.29Si silicon or [2849] of isotopes with a non-zero nucleus magnetic moment λ, [2850] for producing nuclear quantum dots (CI) in the predetermined areas of the substrate (D) or the epitaxial layer (DEP1), in particular for producing nuclear quantum dots (CI) in the predetermined areas of the substrate (D) or the epitaxial layer (DEP1); [2851] Cleaning and temperature treatment; [2852] If necessary, measure the function, position and T2 times of the implanted single atoms and repeat the three preceding steps if necessary; [2853] making ohmic contacts to the substrate (D) or to the epitaxial layer (DEP1); [2854] making the horizontal lines (LH1, LH2, LH3) and, if necessary, the horizontal shielding lines (SH1, SH2, SH3, SH4); [2855] depositing an insulation (IS) and opening the vias; [2856] making the vertical lines (LV1, LV2, LV3) and, if necessary, the vertical shielding lines (SV1, SV2, SV3, SV4):

[2857] Feature 472. A method for producing a quantum ALU comprising the step of [2858] Implanting a carton-containing molecule in to the substrate (D), [2859] wherein the substrate is a diamond and [2860] wherein the molecule comprises at least one or two or three or four or five or six or seven .sup.13C isotopes, and [2861] wherein the molecule comprises at least one nitrogen atom.

[2862] Feature 473. A method for producing a quantum ALU comprising the step of [2863] Implanting a molecule in to the substrate (D), [2864] wherein the substrate (D) is a crystal essentially comprising elements of the IV, main group of the periodic table, and [2865] wherein the molecule has one or two or three or four or five or six or seven isotopes of the elements of the substrate (D), and [2866] wherein these isotopes have a nucleus magnetic moment μ whose magnitude is different from zero, and [2867] wherein the molecule comprises at least one isotope capable of forming a paramagnetic center in the material of the substrate (D) after implantation.

[2868] Transistor

[2869] Feature 474. Transistor [2870] with a substrate (D) and [2871] with one source contact (SO) and [2872] with a drain contact (DR) and [2873] with an insulation (IS) and [2874] with a further insulation (IS2), in particular a gate oxide, and [2875] with a first quantum dot (NV1) and [2876] with a first gate electrode, hereinafter referred to as first vertical line (LV1), and [2877] with a first horizontal line (LH1), [2878] wherein the first quantum dot (NV1) is located in a region of the substrate (D) between the drain contact (DR) and the source contact (SO), and [2879] wherein the first horizontal line (LH1) is electrically isolated from the first vertical line (LV1) by the insulation (IS) in the region of the transistor, and [2880] wherein the first horizontal line (LH1) and the first vertical line (LV1) being electrically insulated from the substrate (D) in the region of the transistor by a further insulation (IS2), and [2881] wherein the first horizontal line (LH1) crosses the first vertical line (LV1) in a region of the transistor in the vicinity of the first quantum dot (NV1) between source contact (SO) and drain contact (DR), in particular above the first quantum dot (NV).

[2882] Feature 475. Transistor according to feature 474, [2883] wherein the substrate (D) of the transistor in the region of the transistor, apart from nuclear quantum dots, comprises essentially only isotopes without nucleus magnetic moment μ.

[2884] Feature 476. Transistor according to one or more of the features 474 to 475, [2885] wherein the transistor comprises at least one nuclear quantum dot (CI); and [2886] wherein the nuclear quantum dot is formed by an isotope with a magnetic moment.

[2887] Feature 477. Transistor according to one or more of the features 474 to 476, [2888] with a second quantum dot (NV2) and [2889] with a second horizontal line (LH2). [2890] wherein the second quantum dot (NV2) is different from the first quantum dot (NV1), and [2891] wherein the second quantum dot (NV2) is located in a region of the substrate (D) between the drain contact (DR) and the source contact (SO), and [2892] wherein the second horizontal line (LH2) is electrically isolated from the first vertical line (LV1) in the region of the transistor by the insulation (IS) and [2893] wherein the first horizontal line (LH1) is electrically isolated from the second horizontal line (LV1) in the region of the transistor, and [2894] wherein the second horizontal line (IH2) being electrically insulated from the substrate (D) by a further insulation (IS2) in the region of the transistor, and [2895] wherein the second horizontal line (LH2) crosses the first vertical line (LV1) in a region of the transistor in the proximity of the second quantum dot (NV2) between source contact (SO) and drain contact (DR), in particular above the second quantum dot (NV2).

[2896] Feature 478. Transistor according to feature 477, [2897] wherein the distance (sp12) between the first quantum dot (NV1) and the second quantum dot (NV2) is so small that the first quantum dot (NV1) forms a quantum register (QUREG) with the second quantum dot (NV2) and/or can be coupled and/or entangled.

Quantum Computer System (QUSYS) 479-485

[2898] Feature 479. Quantum Computer System (QUSYS) [2899] with a central control unit (CSE) and [2900] with one or more data buses (DB) and [2901] with a quantum computers (QUC1 to QUC16), where n is a positive integer greater than 1, and [2902] characterized by, [2903] that the central control unit (CSE) causes at least two or more quantum computers of the n quantum computers (QUC1 to QUC16), hereinafter the quantum computers concerned, to perform the same quantum operations by means of one or more signals via the one data bus (DB) or via the plurality of data buses (DB), and [2904] that after the relevant quantum computers have performed these quantum operations, the central control unit (CSE) queries the results of these quantum operations of the relevant quantum computers via the one data bus (DB) or via the plurality of data buses (DB).

[2905] Feature 480. Quantum computer system (QUSYS) according to feature 479, [2906] wherein the central control unit (CCU) has a memory, and [2907] wherein the central control unit (CSE) stores the results of these quantum operations of the respective quantum computers in this memory.

[2908] Feature 481. Quantum computer system (QUSYS) according to one or more of features 479 to 480, [2909] wherein one or more or all of the quantum computers of the quantum computer system (QUSYS) each have a control device (μC) that is a conventional computer system; and [2910] wherein this control device (μC) is connected to the central control unit (CSE) via one or more data buses (DB), which may also be data links.

[2911] Feature 482. Quantum computer system (QUSYS) according to one or more of the features 479 to 481, [2912] wherein the data bus (DB) of the quantum computer system (QUSYS) is in whole or in part, a linear data bus, and/or [2913] wherein the data bus (DB) of the quantum computer system (QUSYS) is in whole or in part, a linear data bus forming a ring, and/or [2914] wherein the data bus (DB) of the quantum computer system (QUSYS) has a tree structure in whole or in pan, and/or [2915] wherein the data bus (DB) of the quantum computer system (QUSYS) has a star structure in whole or in part.

[2916] Feature 483. Quantum computer system (QUSYS) according to one or more of the features 479 to 482, [2917] wherein the data bus (DB) of the quantum computer system (QUSYS) is bidirectional.

[2918] Feature 484. Quantum computer system (QUSYS) according to one or more of the features 479 to 482 [2919] wherein the quantum computer system (QUSYS) comprises at least a first sub-quantum computer system; and [2920] wherein the first sub-quantum computer system is a quantum computer system according to one or more of features 479 to 482 and [2921] wherein a quantum computer of the first sub-quantum computer system is connected to the central control unit (CSE) of the quantum computer system (QUSYS) via one or more data buses (DB), hereinafter referred to as the sub-quantum computer master, and [2922] wherein the control device (MC) of the sub-quantum computer master of the first sub-quantum computer system is the central control unit (CSE) of the first sub-quantum computer system.

[2923] Feature 485. Quantum computer system (QUSYS) according to feature 484, [2924] wherein the quantum computer system (QUSYS) comprises at least a second sub-quantum computer system; and [2925] wherein the second subquantum computer system is different from the first subquantum computer system, and [2926] wherein the second sub-quantum computer system is a quantum computer system according to any one or more of features 479 to 482 and [2927] wherein a quantum computer of the second sub-quantum computer system is connected to the central control unit (CSE) of the quantum computer system (QUSYS) via one or more data buses (DB), hereinafter referred to as the second sub-quantum computer master; and [2928] wherein the control device (μC) of the second sub-quantum computer master of the second sub-quantum computer system is the central control unit (CSE) of the second sub-quantum computer system.

[2929] Feature 486. Method for operating a quantum computer (QUC) with a control device (μC) [2930] Providing a source code; [2931] Providing a data processing facility; [2932] Processing the source code in the data processing system and generating a binary file, [2933] At least partially transferring the contents of the binary file in to an ordered memory of the control device (μC) in an ordered sequence, said contents being referred to hereinafter as a program; [2934] starting the execution of the program by the control device (μC) and [2935] executing the OP codes in the memory of the control device (μC) depending on the ordered sequence in the memory of the control device, [2936] characterized in, [2937] that the OP codes in the binary file include one or more quantum OP codes and, if applicable, OP codes that are not quantum OP codes; and [2938] that a quantum OP code symbolizes an instruction to manipulate at least one quantum dot (NV) or is an instruction to perform one or more of the quantum operations MFMW, MFMWEE, MFMWCE, MFRWCC, FRWCC, RESQB, RESQBR, RESQRCE, MQBP, MCBP, SMQB, KQBQB, KQBCB, CNQBCBA, CNQBCBB, CNQBCBC, VQB, SCNQB, and [2939] that the execution of the OR codes is the execution of a quantum OR code, if the OR code is a quantum OR code.

[2940] Feature 487. Computer unit [2941] whereas the computer unit comprises [2942] a central control unit (ZSE) of a quantum computer system (QSYS) with one or more quantum dots (NV) and/or [2943] a quantum computer control device (μC) with one or more quantum dots (NV) [2944] and [2945] whereas the computer unit runs a neural network model with neural network nodes, and [2946] wherein the neural network model uses one or more input values and/or one or more input signals, and [2947] wherein the neural network model generates one or more output values and/or one or more output signals [2948] characterized by, [2949] wherein the control of one or more quantum dots (NV), in particular by means of horizontal lines (LH) and/or vertical lines (LV), depends on one or more output values and/or one or more output signals of the neural network model and/or [2950] wherein the value of one or more input values and/or one or more input signals of the neuronal network model depends on the state of one or more of the quantum dots (NV).