METHOD AND DEVICE FOR DRYING A COMPONENT INTERIOR

Abstract

A method for drying a component interior of a component can be used in a lithographic process chain. The method includes a first drying step, in which simultaneously heated air is admitted into a component interior through an inlet, and the heated air is sucked out of the component interior through an outlet. The method also includes a succeeding second drying step, in which the inlet for the heated air is closed and the air is sucked out of the component interior, resulting in a reduced pressure is generated in the component interior.

Claims

1. A method for drying a component interior of a component usable in a lithographic process chain, the method comprising: a) simultaneously heating air admitted into the component interior through an inlet and removing the heated air out of the component interior through an outlet; b) ascertaining a moisture difference between the admitted into the component interior and the heated air removed from the component interior; and c) when the moisture difference falls below a moisture threshold value, closing the inlet for the heated air and removing the air from the component interior, thereby reducing a pressure in the component interior.

2. The method of claim 1, further comprising: during c) measuring a pressure in the component interior; and determining whether the measured pressure falls below a pressure threshold value within a time duration; and when the measured pressure does not fall below the pressure threshold value within the time duration, repeating a) and c).

3. The method of claim 2, wherein the time duration is less than five minutes.

4. The method of claim 3, wherein the pressure threshold value is below thirty millibars.

5. The method of claim 3, wherein the pressure threshold value is below 23 millibars.

6. The method of claim 2, wherein the pressure threshold value is below thirty millibars.

7. The method of claim 2, wherein the pressure threshold value is below 23 millibars.

8. The method of claim 1, wherein a temperature of the heated air is at most 40° C.

9. The method of claim 8, further comprising heating the air admitted into the component interior.

10. The method of claim 8, further comprising: during c) measuring a pressure in the component interior; and determining whether the measured pressure falls below a pressure threshold value within a time duration; and when the measured pressure does not fall below the pressure threshold value within the time duration, repeating a) and c).

11. The method of claim 1, further comprising heating the air admitted into the component interior.

12. The method of claim 1, further comprising, before a), using a wet-dry vacuum cleaner to remove liquid from the interior of the component, wherein the wet-dry vacuum cleaner has a higher suction force than is used in a).

13. The method of claim 12, wherein the liquid removed using the wet-dry vacuum cleaner comprises residual cooling water.

14. The method of claim 1, wherein a) comprises blowing the heated air into the component interior.

15. The method of claim 1, further comprising, after c), using helium to perform a tightness test of the component.

16. The method of claim 1, wherein the component comprises a component usable to check, maintain, produce, clean, or repair the lithography apparatus.

17. The method of claim 1, wherein the component comprises a collector unit.

18. A device configured to drying a component interior of a component usable in a lithographic process chain, the device comprising: a heat unit configured to admit heated air into the component interior through an inlet; a suction unit configured so that, while the heated air is being admitted in by the heat unit, heated air is removed from the component interior through an outlet; a shutoff valve configured to close the inlet when a moisture difference between the heated air blown into the component interior and the heated air removed from of the component interior falls below a moisture threshold value; and a vacuum unit configured to generate a reduced pressure in the component interior and to remove air out from the component interior when the inlet is closed.

19. The method of device 18, wherein the component comprises a component usable to check, maintain, produce, clean, or repair the lithography apparatus.

20. The device of claim 18, wherein the component comprises a collector unit.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0040] FIG. 1A shows a schematic view of an embodiment of an EUV lithography apparatus;

[0041] FIG. 1B shows a schematic view of an embodiment of a DUV lithography apparatus;

[0042] FIG. 2 shows a system for drying a component interior;

[0043] FIG. 3 shows a method for drying a component interior in accordance with a first embodiment; and

[0044] FIG. 4 shows a method for drying a component interior in accordance with a second embodiment.

DETAILED DESCRIPTION

[0045] Identical elements or elements having an identical function have been provided with the same reference signs in the figures, unless indicated to the contrary. It should also be noted that the illustrations in the figures are not necessarily true to scale.

[0046] FIG. 1A shows a schematic view of an EUV lithography apparatus 100A comprising a beam-shaping and illumination system 102 and a projection system 104. In this case, EUV stands for “extreme ultraviolet” and denotes a wavelength of the working light of between 0.1 nm and 30 nm. The beam-shaping and illumination system 102 and the projection system 104 are respectively provided in a vacuum housing (not shown), wherein each vacuum housing is evacuated with the aid of an evacuation device (not shown). The vacuum housings are surrounded by a machine room (not shown), in which drive devices for mechanically moving or setting optical elements are provided. Moreover, electrical controllers and the like can also be provided in this machine room.

[0047] The EUV lithography apparatus 100A comprises an EUV light source 106A. A plasma source (or a synchrotron), which emits radiation 108A in the EUV range (extreme ultraviolet range), that is to say for example in the wavelength range of 5 nm to 20 nm, can for example be provided as the EUV light source 106A. In the beam-shaping and illumination system 102, the EUV radiation 108A is focused and the desired operating wavelength is filtered out from the EUV radiation 108A. The EUV radiation 108A generated by the EUV light source 106A has a relatively low transmissivity through air, for which reason the beam-guiding spaces in the beam-shaping and illumination system 102 and in the projection system 104 are evacuated.

[0048] The beam-shaping and illumination system 102 illustrated in FIG. 1A has five mirrors 110, 112, 114, 116, 118. After passing through the beam-shaping and illumination system 102, the EUV radiation 108A is guided onto a photomask (reticle) 120. The photomask 120 is likewise embodied as a reflective optical element and can be arranged outside the systems 102, 104. Furthermore, the EUV radiation 108A can be directed onto the photomask 120 via a mirror 122. The photomask 120 has a structure which is imaged onto a wafer 124 or the like in a reduced fashion via the projection system 104.

[0049] The projection system 104 (also referred to as a projection lens) has six mirrors M1 to M6 for imaging the photomask 120 onto the wafer 124. In this case, individual mirrors M1 to M6 of the projection system 104 can be arranged symmetrically in relation to an optical axis 126 of the projection system 104. It should be noted that the number of mirrors M1 to M6 of the EUV lithography apparatus 100A is not restricted to the number represented. A greater or lesser number of mirrors M1 to M6 can also be provided. Furthermore, the mirrors M1 to M6 are generally curved at their front sides for beam shaping.

[0050] FIG. 1B shows a schematic view of a DUV lithography apparatus 100B, which comprises a beam-shaping and illumination system 102 and a projection system 104. In this case, DUV stands for “deep ultraviolet” and denotes a wavelength of the working light of between 30 nm and 250 nm. As has already been described with reference to FIG. 1A, the beam-shaping and illumination system 102 and the projection system 104 can be arranged in a vacuum housing and/or be surrounded by a machine room with corresponding drive devices.

[0051] The DUV lithography apparatus 100B has a DUV light source 106B. By way of example, an ArF excimer laser that emits radiation 108B in the DUV range at 193 nm, for example, can be provided as the DUV light source 106B.

[0052] The beam-shaping and illumination system 102 illustrated in FIG. 1B guides the DUV radiation 108B onto a photomask 120. The photomask 120 is embodied as a transmissive optical element and can be arranged outside the systems 102, 104. The photomask 120 has a structure which is imaged onto a wafer 124 or the like in a reduced fashion via the projection system 104.

[0053] The projection system 104 has a plurality of lens elements 128 and/or mirrors 130 for imaging the photomask 120 onto the wafer 124. In this case, individual lens elements 128 and/or mirrors 130 of the projection system 104 can be arranged symmetrically in relation to an optical axis 126 of the projection system 104. It should be noted that the number of lens elements 128 and mirrors 130 of the DUV lithography apparatus 100B is not restricted to the number represented. A greater or lesser number of lens elements 128 and/or mirrors 130 can also be provided. Furthermore, the mirrors 130 are generally curved at their front side for beam shaping.

[0054] An air gap between the last lens element 128 and the wafer 124 may be replaced by a liquid medium 132 which has a refractive index of >1. The liquid medium 132 may be for example high-purity water. Such a construction is also referred to as immersion lithography and has an increased photolithographic resolution. The medium 132 can also be referred to as an immersion liquid.

[0055] FIG. 2 shows a system 400 for drying a component interior 201 of a component 200. The component 200 is a collector (collector unit) of a lithography apparatus 100A, 100B. The collector 200 can correspond to the beam-shaping and illumination system 102 described above.

[0056] In the event of maintenance work on the collector 200, the latter is demounted from the lithography apparatus 100A, 100B and dried. For this purpose, it is connected to a drying device 300 (device) via an inlet 202 and an outlet 203.

[0057] The drying device 300 comprises a suction unit 302 embodied as a wet-dry vacuum cleaner for industrial applications, a vacuum unit or vacuum pump 303, a manometer 304, shutoff valves 305-312, a heat unit 313, an industrial gas container 314, a room air container 315 and a drying unit 316.

[0058] The drying device 300 is suitable for being operated in accordance with the method for drying a component interior 201 in accordance with a first embodiment. Such a method is illustrated in FIG. 3.

[0059] In a step S1, corresponding to a first drying step S1, heated air is blown into the component interior 201 through the inlet 202. For this purpose, industrial gas and/or room air from the containers 314, 315 are/is heated to 40° C. by the heat unit 313 and blown into the component interior 201 through the inlet 202. This is illustrated by the arrows pointing towards the left in FIG. 2.

[0060] In the example in FIG. 2, the room air can optionally be dried by the drying unit or drying cartridge 316 in order that, when admitted into the component interior 201, it has a moisture of between two and ten percent and can absorb more moisture from the collector interior 201. The drying cartridge 316 here consists of two columns filled with silicate gel. What can be advantageous about the use of the drying cartridge 316 is that the moisture or general parameters of the input air is/are known. The drying cartridge 316 is furthermore portable owing to the silicate, for which reason the ambient air (room air) can be used as process gas. The drying cartridge 316 can be equipped with a bake-out device, as a result of which it includes high reusability.

[0061] Simultaneously therewith, in the first drying step S1, the heated air is sucked out of the interior 201 through the outlet 203. The heated air thus flows through the interior 201, collects moisture from the interior 201 and, while entraining the collected moisture, flows out of the interior 201 again through the outlet 203. The flowing out is represented by the arrows pointing towards the right in FIG. 2. The heated air is sucked out or pumped out with the aid of the vacuum cleaner 302.

[0062] The first drying step S1 is followed by a second drying step S4 (FIG. 2). In this step S4, the inlet 202 for the heated air is closed. This is done by the valves 309 and 310 being closed. In addition, the vacuum pump 303 is switched on in step S2. For this purpose, for example, the vacuum cleaner 302 is switched off via the valve 308 and the vacuum pump is switched in by the valve 307 being opened.

[0063] In step S4, the vacuum pump 303 generates a reduced pressure in the component interior 201 and thereby sucks the remaining air and liquid out of the component interior. The component interior 201 is dried efficiently as a result.

[0064] The drying device 300 in FIG. 2 is furthermore suitable for being operated in accordance with the method for drying a component interior 201 in accordance with a second embodiment. Such a method is illustrated in FIG. 4.

[0065] Steps S1 and S4 remain the same and will therefore not be described again. Steps S2 and S3 can be part of the first drying step S1 or can be carried out after the first drying step S1. Likewise, steps S5 and S6 can be part of the second drying step S4 or can be carried out after the second drying step S4.

[0066] Step S2 comprises measuring or ascertaining a moisture difference FU between the air admitted through the inlet 202 and the air emerging from the outlet 203. Moisture sensors 317, 318 which are arranged at the inlet 202 and at the outlet 203 are used for determining the moisture difference FU. The moisture difference FU is formed from the difference between the moisture measured at the inlet 202 and the moisture measured at the outlet 203.

[0067] In step S3, the moisture difference FU measured in step S2 is compared with a previously stored moisture threshold value. If the moisture difference FU is less than the moisture threshold value, the method continues with the second drying step S4. Otherwise, the first drying step S1 is repeated. Steps S1-S3 are repeated until the moisture difference FU falls below the moisture threshold value.

[0068] During step S4, a pressure or vapour pressure at the outlet 203 is measured in step S5.

[0069] The manometer 304 is used for this purpose. The development of the pressure at the outlet 203 over a time period is measured in this case.

[0070] Step S6 involves ascertaining whether the measured pressure falls below a predetermined vapour pressure threshold value within a predetermined time duration of three minutes. If this is the case, the drying is ended in step S7. Otherwise, the method from FIG. 4 is started from the outset again.

[0071] After the drying method in FIG. 3 or 4, a helium test for determining the tightness of the component 200 can also be carried out.

[0072] The drying described above can also be effected in the context of component production.

[0073] Although the present disclosure has been described on the basis of exemplary embodiments, it is modifiable in diverse ways. For example, an excess pressure (for example 10 bar) can be present at the input of the containers 314, 315. It is also possible to vary the temperature at the heat unit 313. Furthermore, the device 300 can comprise more inputs than described above, which can result in a greater number of parallel valves 305, 306, 309, 310.

LIST OF REFERENCE SIGNS

[0074] 100A EUV lithography apparatus [0075] 100B DUV lithography apparatus [0076] 102 Beam-shaping and illumination system [0077] 104 Projection system [0078] 106A EUV light source [0079] 106B DUV light source [0080] 108A EUV radiation [0081] 108B DUV radiation [0082] 110 Mirror [0083] 112 Mirror [0084] 114 Mirror [0085] 116 Mirror [0086] 118 Mirror [0087] 120 Photomask [0088] 122 Mirror [0089] 124 Wafer [0090] 126 Optical axis [0091] 128 Lens element [0092] 130 Mirror [0093] 132 Medium [0094] 200 Component [0095] 201 Component interior [0096] 202 Inlet [0097] 203 Outlet [0098] 300 Device [0099] 302 Suction unit [0100] 303 Vacuum unit [0101] 304 Manometer [0102] 305-312 Shutoff valve [0103] 313 Heat unit [0104] 314 Industrial gas container [0105] 315 Room air container [0106] 316 Drying unit [0107] 317, 318 Moisture sensor [0108] 400 System [0109] FU Moisture difference [0110] M1 Mirror [0111] M2 Mirror [0112] M3 Mirror [0113] M4 Mirror [0114] M5 Mirror [0115] M6 Mirror [0116] S1-S7 Method steps