GUIDEWIRES AND THIN FILM CATHETER-SHEATHS AND METHOD OF MAKING SAME
20200107946 ยท 2020-04-09
Inventors
- Christopher E. BANAS (Breckenridge, CO, US)
- Steven R. Bailey (San Antonio, TX, US)
- Christopher T. BOYLE (Flushing, NY, US)
Cpc classification
A61M2025/0042
HUMAN NECESSITIES
A61M2025/006
HUMAN NECESSITIES
A61F2/915
HUMAN NECESSITIES
A61M2205/0244
HUMAN NECESSITIES
A61F2002/91525
HUMAN NECESSITIES
A61M25/0013
HUMAN NECESSITIES
A61F2/91
HUMAN NECESSITIES
A61F2/95
HUMAN NECESSITIES
A61M2025/0681
HUMAN NECESSITIES
A61M2025/09133
HUMAN NECESSITIES
International classification
A61F2/95
HUMAN NECESSITIES
A61F2/915
HUMAN NECESSITIES
A61F2/91
HUMAN NECESSITIES
Abstract
Guidewires and thin-film catheter-sheaths, fabricated using vacuum deposition techniques, which are monolayer or plural-layer members having ultra-thin wall thicknesses to provide very-low profile delivery assemblies for introduction and delivery of endoluminal devices.
Claims
1. A seamless tube comprising a plurality of concentric substantially homogeneous layers having a thickness, each of the plurality of concentric substantially homogenous layers being a biocompatible material, wherein concentrically adjacent substantially homogenous layers are separated by an inhomogenous interface region characterized by a localized concentration of grain boundaries at the interface region and wherein at least one of the substantially homogenous layers comprises a radiopaque biocompatible material.
2. The seamless tube of claim 1, further comprising a plurality of microperforations that impart at least one of longitudinal compliance and radial compliance.
3. The seamless tube of claim 1, further comprising a discontinuous columnar grain structure across the thickness of the plurality of concentric substantially homogeneous layers.
4. The seamless tube of claim 1, wherein the plurality of concentric substantially homogeneous layers include a limit of grain or defect size.
5. The seamless tube of claim 1, wherein the seamless tube further comprises a guidewire.
6. A guidewire having a tubular guidewire body defining a guidewire lumen and extending from a proximal end to a distal end defining an entire longitudinal length of the guidewire, wherein the tubular guidewire body consists of only a thin-film of a biocompatible metal, the thin-film having a plurality of layers separated by an interface region between adjacent layers, each of the plurality of layers further comprising a substantially homogeneous layer of at least one biocompatible metal and the interface region further comprising inhomogeneous region characterized by a localized concentration of grain boundaries.
7. The guidewire of claim 6, wherein the guidewire body further comprises a plurality of microperforations that impart at least one of longitudinal compliance and radial compliance.
8. The guidewire of claim 6, wherein a radiopaque metal is used to form at least one of the layers.
9. The guidewire of claim 6, wherein the plurality of layers are concentric.
10. The guidewire of claim 6, wherein the plurality of layers include a limit of grain or defect size.
11. The guidewire of claim 6, wherein the biocompatible metal is selected from a group of biocompatible materials consisting of elemental titanium, vanadium, aluminum, nickel tantalum, zirconium, chromium, silver, gold, silicon, magnesium, niobium, scandium, platinum, cobalt, palladium, manganese, molybdenum and alloys thereof, nitinol, and stainless steel.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0021] The foregoing summary, as well as the following detailed description of preferred embodiments of the invention, will be better understood when read in conjunction with the appended drawings. For the purpose of illustrating the invention, there is shown in the drawings embodiments which are presently preferred. It should be understood, however, that the invention is not limited to the precise arrangements and instrumentalities shown.
[0022]
[0023]
[0024]
[0025]
[0026]
DETAILED DESCRIPTION OF THE INVENTION
[0027] The present invention is directed to guidewires and to thin-film catheter-sheaths, wherein each of the guidewire and the thin-film catheter-sheath is fabricated by vacuum deposition techniques, similar to those employed in the microelectronics arts to fabricate semiconductors. Each of the guidewire and the catheter-sheath has a body which is preferably formed either as a single layer tubular member or as a laminated tubular member with plural layers, wherein the layers can be concentrically aligned.
[0028] The inventive guidewires and catheter-sheaths provide several advantages over the prior art. Specific examples of such advantages of the inventive metal catheter-sheaths and thin-film guidewires, include: (i) metal catheter-sheaths have the same metallic creep rate as the self-expanding devices that they constrain so they are less likely to deform and take a set during sterilization or during the shelf-life of the product; (ii) by controlling material properties and employing micro-perforations it is possible to impart radial, longitudinal or multi-directional compliance to the catheter-sheath or guidewire such that compliance and or flexibility is constant or varied over the length of the device; (iii) when vacuum deposition is employed in preference to conventional wrought processes and materials, the chemical content, microstructure, mechanical properties, etc., can be precisely controlled throughout the thickness of the film and along the entire length of the device, as opposed to the prior art which requires fusion of multiple sections to impart certain mechanical properties, microstructure, or chemical content; (iv) in addition to providing single layer thin-film devices, the present invention provides for fabricating multi-layer devices which exhibit improved strength, biocompatibility, corrosion resistance, fatigue resistance, radiopacity, trackability, pushability and interactions with other medical devices or anatomical structures; and (v) vacuum deposition processes lend themselves to fabricating thinner devices and devices with improved wall thickness uniformity.
[0029] The mechanical properties of metals depend significantly on their microstructure. The forming and shaping processes used to fabricate metal foils, wires and thin-walled seamless tubes involves heavy deformation of a bulk material, which results in a heavily strained and deformed grain structure. Even though annealing treatments may partially alleviate the grain deformation, it is typically impossible to revert to well-rounded grain structure and a large range of grain sizes is a common result. The end result of conventional forming and shaping processes, coupled with annealing, typically results in non-uniform grain structure and less favorable mechanical properties in smaller sized wrought metal products. It is possible, therefore, to produce high quality small sized metal products with a homogeneous crystalline structure for a variety of purposes, such as micromechanical devices and medical devices, using vacuum deposition technologies.
[0030] In vacuum deposition technologies, materials are formed directly in the desired geometry, e.g., planar, tubular, etc. The common principle of the vacuum deposition processes is to take a material in a minimally processed form (a source material), such as pellets or thick foils, and atomize the material. Atomization may be carried out using heat, as is the case in physical vapor deposition, or using the effect of collisional processes, as in the case of sputter deposition, for example. In some forms of deposition, a process such as laser ablation, which creates microparticles which typically comprise one or more atoms, may replace atomization. Using laser ablation, the number of atoms per particle may be in the thousands or more. The atoms or microparticles of the source material are then deposited on a substrate or mandrel to directly form the desired object. In other deposition methodologies, chemical reactions between ambient gas introduced into the vacuum chamber, i.e., the gas source, and the deposited atoms and/or particles are part of the deposition process. In this scenario, the deposited material includes compound species that are formed due to the reaction of the solid source and the gas source, such as in the case of chemical vapor deposition. In most cases, the deposited material is then either partially or completely removed from the substrate thereby releasing the desired product.
[0031] The rate of film growth is a significant parameter of vacuum deposition processes. In order to deposit materials that can be compared in functionality with wrought metal products, deposition rates in excess of 1 micrometers/hour are a must and indeed rates as high as 100 micrometers per hour are desirable. These are high deposition rates and it is known that at such rates the deposits always have a columnar structure. Depending on other deposition parameters, and most importantly on the substrate temperature, the columns may be amorphous or crystalline, but at such high deposition rates microcrystalline structure development can be expected at best. The difficulty is that the columns provide a mechanically weak structure in which crack propagation can occur uninhibited across the whole thickness of the deposit.
[0032] A special advantage of vacuum deposition technologies is that it is possible to deposit layered materials and thus films possessing exceptional qualities may be produced (c.f., H. Holleck, V. Schier: Multilayer PVD coatings for wear protection, Surface and Coatings Technology, Vol. 76-77 (1995) pp. 328-336). Layered materials, such as superstructures or multilayers, are commonly deposited to take advantage of some chemical, electronic, or optical property of the material as a coating; a common example is an antireflective coating on an optical lens.
[0033] It has not been recognized until relatively recently that multilayer coatings may have improved mechanical properties compared with similar coatings made of a single layer. The improved mechanical properties may be due to the ability of the interface between the layers to relieve stress. This stress relief occurs if the interface provides a slide plane, is plastic, or may delaminate locally. This property of multilayer films has been recognized in regard with their hardness but this recognition has not been translated to other mechanical properties that are significant for metal products that may be used in application where they replace conventional wrought metal parts.
[0034] The process according to the invention can be modified by interrupting film growth at various layers thereby resulting in discontinuous columns that prevent crack propagation across the entire film thickness. In this sense, it is not necessary that the structure comprise a multiplicity of chemically distinct layers, as is common in the case of thin film technology where multilayers are used. Such chemical differences may be useful and may contribute to improved properties of the materials.
[0035] In its simplest form, the process of fabricating the inventive multilayer devices comprises the steps of providing a substrate, depositing a first layer of material on the substrate, depositing a second layer of material on the first layer of material and optionally removing the layered material from the substrate. In more complex cases, the number of layers is more than two. There is no limitation regarding the number of layers and regarding the thickness of each layer.
[0036] As used in this application a layer is intended to mean a substantially uniform material limited by interfaces between it and adjacent other substantially homogeneous layers, substrate, or environment. The interface region between adjacent layers is an inhomogeneous region in which extensive thermodynamic parameters may change. Different layers are not necessarily characterized by different values of the extensive thermodynamic parameters but at the interface, there is a local change at least in some parameters. For example, the interface between two steel layers that are identical in composition and microstructure may be characterized by a high local concentration of grain boundaries due to an interruption of the film growth process. Thus, the interface between layers is not necessarily different in chemical composition if it is different in structure.
[0037] It is necessary to provide for good adhesion between the layers and this is usually achieved by providing for a relatively broad interface region rather than for an abrupt interface region. The width of the interface region may be defined as the range within which extensive thermodynamic parameters change. This range can depend on the interface area considered and it may mean the extent of interface microroughness. In other words, adhesion may be promoted by increased interface microroughness between adjacent layers.
[0038] By providing for a layered structure, the inventive materials comprise a controlled maximum size of grains and columns as extended defects in the direction of the film growth (perpendicular to the layers). This limit of the grain or defect size results in materials that have increased mechanical strength and particularly increased toughness compared to their non-laminated counterparts, both deposited and wrought materials. In addition, by limiting the extent to which defects and grain boundaries reach across the laminate, corrosion resistance is also improved.
[0039] Laminated materials will have additional advantages when chemical compositions of the layers are chosen to achieve special properties. For example, a radiopaque material such as Ta may form one layer of a structure while other layers are chosen to provide the material with necessary mechanical and other properties.
[0040] In accordance with a preferred embodiment the present invention, the preferred deposition methodologies include ion-beam assisted evaporative deposition and sputter deposition techniques. In ion beam-assisted evaporative deposition it is preferable to employ dual and simultaneous thermal electron beam evaporation with simultaneous ion bombardment of the material being deposited using an inert gas, such as argon, xenon, nitrogen or neon. Bombardment with inert gas ions during deposition serves to reduce void content by increasing the atomic packing density in the deposited material. The reduced void content in the deposited material allows the mechanical properties of that deposited material to be similar to bulk material properties. Deposition rates up to 20 nanometers per second (nm/sec) are achievable using ion beam-assisted evaporative deposition techniques.
[0041] Materials to make the inventive guidewires and thin-film catheter-sheaths are chosen for their biocompatibility, mechanical properties, i.e., tensile strength, yield strength, and their ease of deposition. Examples of such materials include, but are not limited to, elemental titanium, vanadium, aluminum, nickel, tantalum, zirconium, chromium, silver, gold, silicon, magnesium, niobium, scandium, platinum, cobalt, palladium, manganese, molybdenum and alloys thereof, such as zirconium-titanium-tantalum alloys, nitinol, and stainless steel.
[0042] The guidewires and thin-film catheter-sheaths of the invention are preferably fabricated of nickel-titanium alloys, and may be doped or laminated with radiopaque materials, such as tantalum (Ta) to enhance the radiopacity of the guidewire under fluoroscopy. In one embodiment, the inventive guidewires and thin-film catheter-sheaths preferably have shape memory or superelastic properties. By way of example, a method of forming the elongated shape memory or superelastic portion of the guidewire or thin-film catheter-sheath can include fabricating a generally tubular member by vacuum depositing nickel-titanium alloy onto a suitable cylindrical substrate, removing the deposited tubular member from the substrate, then heat treating the deposited material at a given temperature between about 450 to about 600 C., preferably about 475 to about 550 C., for between about 0.5 to about 60 minutes to generate superelastic properties. To impart a shape memory, either the entire material or a region or regions of the deposited material can be subjected to shaping stress equal to between about 5% to about 50%, preferably about 10% to about 30%, of the yield stress of the material (as measured at room temperature) during a heat treatment of about 450 to about 600 C. This thermomechanical processing pre-programs a shape memory for the pre-programmed shape to the material and provides relatively uniform residual stress in the material. It is preferable that the alloy composition and thermal treatment are selected to provide an austenite finish transformation temperature generally about 20 C. to about 40 C. and usually less than body temperature (approximately 37 C.). To obtain more consistent final properties, the material may be annealed after deposition. Although an exemplary method of forming the elongated shape memory or superelastic portion of the guidewire or thin-film catheter-sheath has been given, it is to be understood that the present invention is not limited to this particular method, or the given values.
[0043] In accordance with a method of the present invention, vacuum deposition methods as are known in the microelectronics and nano-fabrication arts are preferably employed. It is preferable to employ sputtering or ion beam-assisted evaporative deposition to deposit at least one metal film of a biocompatible metal onto a sacrificial substrate. The substrate has a geometry corresponding to the geometry desired for the guidewire and/or thin-film catheter-sheath, e.g., to create tubular body having a circular or elliptical transverse cross-sectional shape, at least one layer of a thin-film of a biocompatible metal is deposited onto the sacrificial substrate. When multiple layers are to be deposited, each layer may have varying properties along the length of the device by varying the local deposition conditions. For example, locally doping the target material with Ti in the case of nitinol deposition to raise the transition temperature, with Ta to increase radiopacity, or with a radioactive isotope to cause local radioactivity. After depositing at least one layer having a desired thickness, the substrate and the deposited thin-film of metal are removed from the deposition chamber and the sacrificial substrate is removed by means suitable for the selected substrate. For example, if a copper substrate is employed, it can be removed by chemical etching. Alternatively, a sacrificial layer of a material, such as carbon or aluminum, may be deposited on the external surface of the substrate prior to depositing the metal. After deposition has occurred, the sacrificial layer can be removed by any suitable process or means, such as, for example, melting, chemical means, ablation, or machining, to free the guidewire or catheter-sheath from the substrate. The entire guidewire or a selected region (or selected regions) of the guidewire may be subject to post-deposition annealing to alter the crystalline structure of the thin-film and effect changes in the material properties of the metal film, such as altering the transition temperature of the annealed regions.
[0044] Turning now to the accompanying figures,
[0045]
[0046]
[0047] Referring now to
[0048] Turning now to
[0049] In accordance with a preferred embodiment the present invention, the preferred vacuum deposition technique is selected from the group consisting of ion-beam assisted evaporative deposition and sputtering techniques. In ion beam-assisted evaporative deposition it is preferable to employ dual and simultaneous thermal electron beam evaporation with simultaneous ion bombardment of the material being deposited using an inert gas, such as argon, xenon, nitrogen or neon. Bombardment with inert gas ions during deposition serves to reduce void content by increasing the atomic packing density in the deposited material. The reduced void content in the deposited material allows the mechanical properties of that deposited material to be similar to the bulk material properties. Deposition rates up to 20 nanometers per second (nm/sec) are achievable using ion beam-assisted evaporative deposition techniques.
[0050] As used in this application, the articles a and an refer to one or more than one (i.e., to at least one) of the grammatical objects of the article. By way of example, an element means one element or more than one element.
EXAMPLE 1
[0051] In accordance with the preferred embodiment of fabricating the inventive microporous metallic implantable device in which the device is fabricated from vacuum deposited nitinol tube, a cylindrical deoxygenated copper substrate is provided. The substrate is mechanically and/or electropolished to provide a substantially uniform surface topography for accommodating metal deposition thereupon. A cylindrical hollow cathode magnetron sputtering deposition device was employed, in which the cathode was on the outside and the substrate was positioned along the longitudinal axis of the cathode. A cylindrical target consisting either of a nickel-titanium alloy having an atomic ratio of nickel to titanium of about 50-50% and which can be adjusted by spot welding nickel or titanium wires to the target, or a nickel cylinder having a plurality of titanium strips spot welded to the inner surface of the nickel cylinder, or a titanium cylinder having a plurality of nickel strips spot welded to the inner surface of the titanium cylinder is provided. It is known in the sputter deposition arts to cool a target within the deposition chamber by maintaining a thermal contact between the target and a cooling jacket within the cathode. In accordance with the present invention, it has been found useful to reduce the thermal cooling by thermally insulating the target from the cooling jacket within the cathode while still providing electrical contact to it. By insulating the target from the cooling jacket, the target is allowed to become hot within the reaction chamber. Two methods of thermally isolating the cylindrical target from the cooling jacket of the cathode were employed. First, a plurality of wires having a diameter of 0.0381 mm were spot welded around the outer circumference of the target to provide an equivalent spacing between the target and the cathode cooling jacket. Second, a tubular ceramic insulating sleeve was interposed between the outer circumference of the target and the cathode cooling jacket. Further, because the Ni-Ti sputtering yields can be dependant on target temperature, methods which allow the target to become uniformly hot are preferred.
[0052] The deposition chamber was evacuated to a pressure less than or about 2510.sup.7 Torr and pre-cleaning of the substrate is conducted under vacuum. During the deposition, substrate temperature is preferably maintained within the range of 300 and 700 degrees Centigrade. It is preferable to apply a negative bias voltage between 0 and 1000 volts to the substrate, and preferably between 50 and 150 volts, which is sufficient to cause energetic species arriving at the surface of the substrate. During deposition, the gas pressure is maintained between 0.1 and 40 mTorr but preferably between 1 and 20 mTorr. Sputtering preferably occurs in the presence of an Argon atmosphere. The argon gas must be of high purity and special pumps may be employed to reduce oxygen partial pressure. Deposition times will vary depending upon the desired thickness of the deposited tubular film. After deposition, the plurality of microperforations are formed in the tube by removing regions of the deposited film by etching, such as chemical etching, ablation, such as by excimer laser or by electric discharge machining (EDM), or the like. After the plurality of microperforations are formed, the formed microporous film is removed from the copper substrate by exposing the substrate and film to a nitric acid bath for a period of time sufficient to remove or dissolve the copper substrate.
[0053] It will be appreciated by those skilled in the art that changes could be made to the embodiments described above without departing from the broad inventive concept thereof. It is understood, therefore, that this invention is not limited to the particular embodiments disclosed, but it is intended to cover modifications within the spirit and scope of the present invention as defined by the appended claims.