Sinusoidal phase modulation of mode-locked lasers

Abstract

A mode-locked laser comprising circuitry configured to drive an electro-optic modulator (EOM) in the mode-locked laser with a drive waveform, the drive waveform being a phase-coherent sinusoidal waveform at a frequency equal to a repetition rate of the mode-locked laser, a phase-coherent pulsed waveform at a frequency equal to the repetition rate of the mode-locked laser, or a phase-coherent sinusoidal waveform at a frequency equal to half of the repetition rate of the mode-locked laser.

Claims

1. A mode-locked laser having a pulse duration <10.sup.12 s, comprising circuitry configured to drive an electro-optic modulator (EOM) in the mode-locked laser with a drive waveform, the drive waveform being a phase-coherent sinusoidal waveform at a frequency equal to a repetition rate of the mode-locked laser; wherein an amplitude of the laser output varies as a sinusoidal function of a phase of the drive waveform relative to the mode-locked laser.

2. The mode-locked laser of claim 1, wherein the sinusoidal waveform is phase modulated over a 90 degree range having amplitude range of V peak.

3. The mode-locked laser of claim 1, wherein the sinusoidal waveform is phase modulated over a 180 degree range having an amplitude range of V peak-to-peak.

4. The mode-locked laser of claim 2, wherein a DC bias is applied to the sinusoidal waveform.

5. The mode-locked laser of claim 3, wherein a DC bias is applied to the sinusoidal waveform.

6. The mode-locked laser of claim 1, wherein the EOM is configured to generate an amplitude modulated output.

7. The mode-locked laser of claim 6, wherein a DC bias is applied to the sinusoidal waveform.

8. The mode-locked laser of claim 1, wherein the EOM comprises a Pockels cell.

9. The mode-locked laser of claim 1, wherein a DC bias is applied such that the waveform is centered with symmetrical positive and negative voltages having substantially equal EOM optical phase shift.

10. A mode-locked laser having a pulse duration <10.sup.12 s, comprising circuitry configured to drive an electro-optic modulator (EOM) in the mode-locked laser with a drive waveform, the drive waveform being a phase-coherent sinusoidal waveform at a frequency equal to half of a repetition rate of the mode-locked laser; wherein an amplitude of the laser output varies as a sinusoidal function of a phase of the drive waveform relative to the mode-locked laser.

11. The mode-locked laser of claim 10, the EOM is configured to generate a phase modulated output.

12. The mode-locked laser of claim 10, the EOM is configured to generate an amplitude modulated output.

13. The mode-locked laser of claim 10, wherein the EOM comprises a Pockels cell.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows a schematic diagram of an EOM Amplitude Modulator.

(2) FIG. 2 shows a schematic diagram of a linear amplifier.

(3) FIG. 3 shows a schematic diagram of a push-pull amplifier.

(4) FIG. 4 illustrates an amplitude modulation with an AC waveform.

(5) FIG. 5 shows an EOM amplitude modulation assembly according to an embodiment.

(6) FIG. 6 illustrates the test results of the EOM amplitude modulation assembly according to an embodiment.

(7) FIG. 7 shows a waveform where a phase shift of 90 is used to shift the drive waveform relative to the laser pulse according to an embodiment.

(8) FIG. 8 is a schematic circuit diagram of the series of connected pulse generating stages according to an embodiment.

(9) FIG. 9 shows the waveforms with various DC bias according to an embodiment.

(10) FIG. 10 shows the waveforms with and without phase shift according to an embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(11) The description of illustrative embodiments according to principles of the present invention is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. In the description of embodiments of the invention disclosed herein, any reference to direction or orientation is merely intended for convenience of description and is not intended in any way to limit the scope of the present invention. Relative terms such as lower, upper, horizontal, vertical, above, below, up, down, top and bottom as well as derivative thereof (e.g., horizontally, downwardly, upwardly, etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description only and do not require that the apparatus be constructed or operated in a particular orientation unless explicitly indicated as such. Terms such as attached, affixed, connected, coupled, interconnected, and similar refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise. Moreover, the features and benefits of the invention are illustrated by reference to the exemplified embodiments. Accordingly, the invention expressly should not be limited to such exemplary embodiments illustrating some possible non-limiting combination of features that may exist alone or in other combinations of features; the scope of the invention being defined by the claims appended hereto.

(12) This disclosure describes the best mode or modes of practicing the invention as presently contemplated. This description is not intended to be understood in a limiting sense, but provides an example of the invention presented solely for illustrative purposes by reference to the accompanying drawings to advise one of ordinary skill in the art of the advantages and construction of the invention. In the various views of the drawings, like reference characters designate like or similar parts.

(13) FIG. 5 shows a setup of the modulator according to an embodiment. Similar to the setup of FIG. 1, the EOM 510 is placed between two polarizers 530, 540. A custom circuit 560 is used to lock to the laser and create a phase locked signal, with the ability to step phase shift that signal, to a RF power amplifier 570 which drives a transformer 580 providing the AC voltage to the EOM. A DC input (offset) 590 is used to adjust the location of the AC signal within the range of the EOM. The AC signal used for this setup is well below the required amplitude for full contrast laser modulation.

(14) Tests were performed using the setup shown in FIG. 5, and the results are shown in FIG. 6. The waveform 610 shows the pulses from the pickoff before the EOM amplitude modulation assembly. Waveform 620 is the drive waveform, generated by the custom phase sync circuit, sent to the power amplifier. Note the 180 degree phase change halfway through the data set. The waveform 630 is the output detector indicating laser intensity.

(15) This shows that using this method, laser intensity of a mode-locked laser can be modulated to arbitrary levels within 2-3 laser pulses on an 80 MHz repetition rate laser. This superior modulation speed is not achieved by any of the existing techniques.

(16) In one embodiment, a sinusoidal waveform, which is representative of the EOM modulation waveform, is expressed as:
v.sub.s(t)=V.sub.P sin(2ft+),
where V.sub.P is the amplitude, or Peak Amplitude of the waveform, f is frequency in Hz, and is the phase in radians. Note that there are other representations of amplitude, for example, V.sub.RMS=.sub.P/{square root over (2)} (Root Mean Square Amplitude) or V.sub.Peak-Peak=2V.sub.P (Peak-to-Peak Amplitude).

(17) A periodic impulse train, which is representative of pulsed lasers, is expressed as:

(18) $p\left(t\right)=\underset{n=-}{\overset{}{.Math.}}\left(t-{\mathrm{nT}}_s\right)$
where T.sub.s is the period of the pulses. This means that laser pulses occur at t=0, t=T.sub.s, t=2T.sub.s, . . . , etc. Now the phase of the EOM drive sinusoid is relative to this and is defined by . The voltage on the EOM is relevant only at the instant in time when the laser pulse is present in the EOM material (crystal). That means the voltage on the sinusoidal waveform is relevant only at time t=0, t=T.sub.s, t=2T.sub.s, . . . , etc. The drive voltage is thus the sinusoid equation evaluated at those instants in time, and now looks like a discrete-time sampled signal:
v.sub.s(nT.sub.s)=V.sub.P sin(2fnT.sub.s+),n=0,1,2, . . .

(19) When the sinusoid waveform is frequency locked to the laser, we have f=1/T.sub.s=repetition rate of the mode-locked laser. This is the key innovation concept from which the present invention is derived. In some embodiments, this concept may be extended to a drive waveform having a phase-coherent pulsed waveform at a frequency equal to the repetition rate of the mode-locked laser, as well as to drive waveform having a phase-coherent sinusoidal waveform at a frequency equal to 1/(2T.sub.s), etc.

(20) FIG. 7 shows a waveform where a phase shift of 90 is used to shift the drive waveform relative to the laser pulse, and thus change the voltage on the EOM at the instant the pulse arrives such that the voltage on the EOM changes from V.sub.P to 0.

(21) Note that shifting the phase another 90 (for a total of 180) will change the voltage to V.sub.P, doubling the voltage range available to drive the EOM.

(22) In one embodiment, a discrete number of pulse amplitudes are generated by a series of connected pulse generating stages. FIG. 8 is a schematic circuit diagram of the series of connected pulse generating stages according to an embodiment.

(23) When a DC bias (V.sub.DC BIAS) is applied, the drive waveform is expressed as:
v.sub.s(nT.sub.s)=V.sub.P sin(2fnT.sub.s+)+V.sub.DC BIAS,n=0,1,2, . . .

(24) FIG. 9 shows the waveforms with: (1) no DC bias 910, (2)+DC bias 920 and (3) DC bias 930 is applied. FIG. 10 shows the cases where (1) no DC bias is applied 1010 and (2) no DC bias is applied with +90 degrees phase shift 1020.

(25) In one embodiment, a DC bias is applied such that the waveform is centered with symmetrical positive and negative voltages having substantially equal EOM optical phase shift.

(26) While the present invention has been described at some length and with some particularity with respect to the several described embodiments, it is not intended that it should be limited to any such particulars or embodiments or any particular embodiment, but it is to be construed with references to the appended claims so as to provide the broadest possible interpretation of such claims in view of the prior art and, therefore, to effectively encompass the intended scope of the invention. Furthermore, the foregoing describes the invention in terms of embodiments foreseen by the inventor for which an enabling description was available, notwithstanding that insubstantial modifications of the invention, not presently foreseen, may nonetheless represent equivalents thereto.