METHOD AND APPARATUS FOR PRODUCING A RADIATION FIELD AMPLIFYING SYSTEM

Abstract

A method for producing a radiation field amplifying system for amplifying a to be amplified radiation field, in particular for producing a thin disc laser amplifying system, which comprises an amplifying element with a laser active body and a cooling system for cooling said amplifying element with at least one heat sink element wherein the method comprises the step of connecting said amplifying element and said at least one heat sink element is proposed by soldering with a solder filling composition, wherein the step of soldering comprises heating up, in particular melting, said solder filling composition by exposing said solder filling composition to a soldering radiation field.

Claims

1. Method for producing a radiation field amplifying system for amplifying a to be amplified radiation field, in particular for producing a thin disc laser amplifying system, which comprises an amplifying element with a laser active body and a cooling system for cooling said amplifying element with at least one heat sink element wherein the method comprises the step of connecting said amplifying element and said at least one heat sink element by soldering with a solder filling composition, wherein the step of soldering comprises heating up, in particular melting, said solder filling composition by exposing said solder filling composition to a soldering radiation field.

2. Method according to claim 1, wherein said solder filling composition is inserted in a connection section between a connecting side of said amplifying element and a connecting side of said at least one heat sink element.

3. Method according to claim 2, wherein said connection section is filled with said solder filling composition.

4. Method according to claim 2, wherein said solder filling composition is inserted areally in said connection section, in particular said solder filling composition extends at least within a filling area with said filling area extends between said connecting sides, in particular said filling area corresponds to a projection of one of said connecting sides onto a geometrical projection plane which extends between said connecting sides of said amplifying element and said heat sink element.

5. Method according to claim 1, wherein at least a part of said solder filling composition is inserted into a connection section as a foil.

6. Method according to claim 1, wherein at least a part of said solder filling composition is attached to a surface of at least one of said connecting sides before said heating up.

7. Method according to claim 1, wherein a surface of at least one of said connecting sides is coated by at least a part of said solder filling composition before said heating up.

8. Method according to claim 1, wherein at least a part of said solder filling composition is attached to the surface of at least one of said connecting sides by thin-film deposition, in particular by physical vapor deposition and/or by sputtering.

9. Method according to claim 1, wherein said solder filling composition comprises gold and/or tin.

10. Method according to claim 1, wherein said solder filling composition is exposed to one soldering radiation field or several soldering radiation fields within one exposure interval or within several exposure intervals.

11. Method according to claim 1, wherein at least during one exposure interval the intensity of said soldering radiation field is, in particular continuously, varied with respect to time between a first exposure intensity and a second exposure intensity.

12. Method according to claim 1, wherein at least during one exposure interval all of said solder filling composition in said filling area is exposed to said soldering radiation field.

13. Method according to claim 1, wherein at least during one exposure interval only a part of said solder filling composition in said filling area is exposed to said soldering radiation field and different parts of said solder filling composition are exposed consecutively with respect to time to said soldering radiation field.

14. Method according to claim 1, wherein the wavelength of said soldering radiation field is chosen and selected such that said amplifying element and/or said heat sink element are essentially transparent for said soldering radiation field.

15. Method according to claim 1, wherein the wavelength of said soldering radiation field is chosen and selected such that said solder filling composition has a large absorption rate for the chosen and selected wavelength.

16. Method according to claim 1, wherein said soldering radiation field hits at first a side of said solder filling composition which faces towards said amplifying element.

17. Method according to claim 1, wherein said soldering radiation field propagates through said amplifying element and propagates into said connection section through an interface between said amplifying element and said connection section.

18. Method according to claim 1, wherein said soldering radiation field hits at first a side of said solder filling composition which faces towards said heat sink element.

19. Method according to claim 1, wherein said soldering radiation field propagates through said heat sink element and propagates into said connection section through an interface between said heat sink element and said connection section.

20. Method according to claim 1, wherein said amplifying element, through which said soldering radiation field propagates, and/or said heat sink element, through which said soldering radiation field propagates, absorb essentially no power from said soldering radiation field.

21. Method according to claim 1, wherein said amplifying element and/or said at least one heat sink element are kept below a pre-defined uppermost temperature.

22. Method according to claim 1, wherein said amplifying element and/or said at least one heat sink element are kept essentially strain free, in particular free of thermal induced strain.

23. Method according to claim 1, wherein said amplifying element is, in particular slightly, curved in particular with a predefined radius of curvature.

24. Method according to claim 1, wherein said amplifying element is attached to an attaching area of a supporting device.

25. Method according to claim 24, wherein the shape of said amplifying element is shaped, in particular modified, according to a shape of said attaching area of said supporting device.

26. Method according to claim 24, wherein said amplifying element is curved according to a curvature of said attaching area of said supporting device.

27. Method according to claim 1, wherein the shape of said amplifying element is kept essentially the same during said exposure to said soldering radiation field.

28. Method according to claim 24, wherein the shape of said amplifying element is kept essentially the same during said exposure to said soldering radiation field.

29. Method according to claim 1, wherein a bending curvature of said amplifying element is kept essentially constant during said exposure to said soldering radiation field.

30. Method according to claim 1, wherein said amplifying element and said at least one heat sink element, in particular with said solder filling composition in between, are pressed against each other during said soldering process.

31. Method according to claim 1, wherein said soldering is done in vacuum.

32. Method according to claim 1, wherein said solder filling composition is surrounded by an anti-oxidation protective atmosphere during said soldering process.

33. Method according to claim 1, wherein said amplifying element and said heat sink element are, in particular with connecting sides, arranged adjacently to each other.

34. Method according to claim 1, wherein said connection section between said amplifying element and said heat sink element is, in particular after the connection process, essentially fully filled with said solder filling composition.

35. Method according to claim 1, wherein a thickness of said connection section, which essentially corresponds to a distance between the surface of said connecting side of said amplifying element and said connecting side of said heat sink element, increases, in particular slightly, upon increasing a radial distance from an axis of the arrangement, in particular an optical axis of said radiation field amplifying system.

36. Method according to claim 1, wherein a curvature of said connecting side of said amplifying element corresponds, in particular after the connecting process, essentially to a predefined curvature, in particular to a curvature of an attaching area of a supporting device which has supported said amplifying element during the connecting process.

37. Method according to claim 1, wherein said amplifying element comprises, in particular at its connecting side, a high reflection layer with said high reflection layer being highly reflective for said to be amplified radiation field.

38. Method according to claim 1, wherein said amplifying element is covered at its connecting side with a metallization coating.

39. Method according to claim 1, wherein said heat sink element is coated at its connecting side, in particular within a connecting area, with a metallization coating.

40. Radiation field amplifying system for amplifying a to be amplified radiation field, in particular a thin disc laser amplifying system, which comprises an amplifying element with a laser active body and a cooling system for cooling said amplifying element with at least one heat sink element wherein said amplifying element and said at least one heat sink element are connected by a soldering joint and wherein said soldering joint has been produced by laser soldering, in particular by a method according to claim 1.

41. Radiation field amplifying system according to claim 40, wherein said amplifying element and said heat sink element are, in particular with connecting sides, arranged adjacently to each other.

42. Radiation field amplifying system according to claim 40, wherein said connection section between said amplifying element and said heat sink element is, in particular after the connection process, essentially fully filled with said solder filling composition.

43. Radiation field amplifying system according to claim 40, wherein a thickness of said connection section, which essentially corresponds to a distance between the surface of said connecting side of said amplifying element and said connecting side of said heat sink element, increases, in particular slightly, upon increasing a radial distance from an axis of the arrangement, in particular an optical axis of said radiation field amplifying system.

44. Radiation field amplifying system according to claim 40, wherein a curvature of said connecting side of said amplifying element corresponds, in particular after the connecting process, essentially to a predefined curvature, in particular to a curvature of an attaching area of a supporting device which has supported said amplifying element during the connecting process.

45. Radiation field amplifying system according to claim 40, wherein said amplifying element comprises, in particular at its connecting side, a high reflection layer with said high reflection layer being highly reflective for said to be amplified radiation field.

46. Radiation field amplifying system according to claim 40, wherein said amplifying element is covered at its connecting side with a metallization coating.

47. Radiation field amplifying system according to claim 40, wherein said heat sink element is coated at its connecting side, in particular within a connecting area, with a metallization coating.

48. Apparatus for producing a radiation field amplifying system, in particular a thin disc laser amplifying system, with an amplifying element and a cooling system for said amplifying element with at least one heat sink element, wherein said apparatus comprises a first supporting device for said amplifying element and a second supporting device for said heat sink element and wherein said apparatus comprises a radiation field providing system for providing a soldering radiation field.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0228] FIG. 1 shows a radiation field amplifying system according to a first embodiment;

[0229] FIG. 2 shows an enlarged view of an amplifying element and a heat sink element of the radiation field amplifying system which are connected by a soldering joint;

[0230] FIG. 3 shows an enlarged view of an amplifying element and a heat sink element which are connected by a soldering joint according to a second embodiment of a radiation field amplifying system;

[0231] FIG. 4 shows an apparatus for producing a radiation field amplifying system and an arrangement of an amplifying element, a heat sink element and in between a solder filling composition during exposure to a soldering radiation field according to a first embodiment of a method for producing a radiation field amplifying system;

[0232] FIG. 5 shows similar view as FIG. 4 of an apparatus and a method according to another embodiment and

[0233] FIG. 6 shows a filling area which is filled with said solder filling composition and which is partly exposed to said soldering radiation field.

DETAILED DESCRIPTION OF THE INVENTION

[0234] An as a whole designated with 10 radiation field amplifying system according to a first embodiment comprises an amplifying element which is designated as a whole as 12, a cooling system 14 for cooling said amplifying element 12 and an optical system 16 for guiding a to be amplified radiation field 22 along an optical path.

[0235] Exemplarily a radiation field amplifying system 10 is shown in FIG. 1.

[0236] The optical path passes through amplifying element 12, in particular essentially in axial direction with respect to an optical axis 26 of said radiation field amplifying system 10, and to be amplified radiation field 22 is amplified by passing through amplifying element 12.

[0237] Optical system 16 according to the present embodiment comprises a coupling element 32 on which to be amplified radiation field 22 is incident when passing along the optical path.

[0238] Coupling element 32 couples out a part of to be amplified radiation field 22 and accordingly an amplified radiation field 34 is provided.

[0239] In particular, coupling element 32 is semi-reflective for incident to be amplified radiation field 22. Therefore, a part of incident to be amplified radiation field 22 is reflected by coupling element 32 and propagates further along the optical path and is again amplified within amplifying element 12. Another part of incident to be amplified radiation field 22 is coupled out, for example transmitted, by coupling element 32 to be provided as amplified radiation field 34.

[0240] Amplifying element 12 comprises a laser active body 52 (FIG. 2), which comprises a laser active material. The laser active material exhibits a laser active transition.

[0241] In a pumped part 54 of laser active body 52 energy is pumped for amplifying to be amplified radiation field 22. In particular, a pumping radiation field 56 penetrates pumped part 54 and provides pumping energy.

[0242] With the pumping energy the laser active transition is excited and a population inversion is induced in pumped part 54 of laser active body 52.

[0243] To be amplified radiation field 22 propagates along the optical path through pumped part 54 and is amplified by stimulated emission of the excited laser active transition within pumped part 54 of laser active body 52.

[0244] To be amplified radiation field 22 enters amplifying element 12 at an entry side 62 and exits amplifying element 12 at an exiting side 64. In the present embodiment, entry side 62 and exiting side 64 coincide.

[0245] In particular, amplifying element 12 comprises at entry side 62 and at exiting side 64 an anti-reflection layer 66. Anti-reflection layer 66 essentially prevents reflection of to be amplified radiation field 22. For example, at least 99.5% of incident to be amplified radiation field 22 is transmitted through anti-reflection layer 66.

[0246] For example, anti-reflection layer 66 comprises several sublayers, which for example possess alternately a high refractive index and a low refractive index.

[0247] In the present embodiment laser active body 52 is at entry side 62 and at exiting side 64 covered with anti-reflection layer 66.

[0248] In particular, amplifying element 12 comprises a high-reflective layer 72, which is highly reflective for to be amplified radiation field 22.

[0249] Advantageously, high reflective layer 72 reflects at least 99.5% of incident to be amplified radiation field 22.

[0250] For example, high reflective layer 72 comprises several sublayers, which for example possess alternately a high refractive index and a low refractive index.

[0251] In the present embodiment, laser active body 52 is at one side covered with high reflective layer 72.

[0252] Preferably, high reflective layer 72 is arranged at a side of amplifying element 12 which is, in particular with respect to the axial direction of optical axis 26, opposite to entry side 62.

[0253] Accordingly, the optical path for to be amplified radiation field 22 runs from entry side 62 through laser active body 52 to high reflective layer 72 and backwards to exiting side 64.

[0254] In particular, the optical path hits high reflective layer 72 at least approximately perpendicular and to be amplified radiation field 22 enters and exits amplifying element 12 at essentially the same area of its side which corresponds to coinciding entry side 62 and exiting side 64.

[0255] Advantageously, amplifying element 12 is disc like shaped with an extension of amplifying element 12 within a geometrical disc plane 82 being much larger, for example at least five times larger, than an extension of amplifying element 12 perpendicular to geometrical disc plane 82.

[0256] In particular, geometrical disc plane 82 runs at least approximately perpendicular to optical axis 26.

[0257] In the present embodiment geometrical disc plane 82 extends through laser active body 52, which is also essentially disc like shaped.

[0258] In particular, geometrical disc plane 82 extends between two sides of amplifying element 12 with the surfaces of the two sides being essentially planar and the surfaces of the two sides running essentially parallel to geometrical disc plane 82.

[0259] In particular, at one of the two sides anti-reflection layer 66 is arranged and at the other of the two sides high reflective layer 72 is arranged.

[0260] Preferably, high reflective layer 72 extends essentially within a geometrical plane which runs essentially parallel to geometrical disc plane 82.

[0261] In particular, anti-reflection layer 66 extends essentially in a geometrical plane which runs essentially parallel to geometrical disc plane 82.

[0262] Cooling system 14 is provided for cooling amplifying element 12.

[0263] In particular, due to the introduction of pumping energy into pumped part 54 this part and amplifying element 12 as a whole heats up during operation of radiation field amplifying system 10 for example to temperatures above 100 C. Preferably the temperatures are kept below 140 C.

[0264] Cooling system 14 transfers heat away from amplifying element 12, in particular away from pumped part 54, for example towards an heat absorption device. Therefore, the locally produced heat is efficiently discharged and spread.

[0265] Cooling system 14 comprises a heat sink element 92, which is in thermal contact with amplifying element 12.

[0266] Heat sink element 92 comprises a material with good thermal conductivity for providing an efficient heat transfer.

[0267] Via the thermal contact, heat is transferred away from amplifying element 12 towards heat sink element 92, where advantageously the heat is further spreaded.

[0268] Heat sink element 92 and amplifying element 12 are connected by a soldering joint 112.

[0269] Soldering joint 112 comprises a solder filling composition 114, which extends at least within a filling area 118 of a connection section 122.

[0270] Connection section 122 extends essentially from a connecting side 124 of amplifying element 12 to a connecting side 126 of heat sink element 92.

[0271] In particular, solder filling composition 114 is within a contact area 125 at connecting side 124 in contact with amplifying element 12 and solder filling composition 114 is within a contact area 127 at connecting side 126 in contact with heat sink element 92.

[0272] Filling area 118 extends in particular areally between both connecting sides 124 and 126. For example, filling area 118 extends essentially within a geometrical plane which runs between connecting sides 124 and 126.

[0273] Preferably, filling area 118 has essentially the same areal extensions as connecting side 124 of amplifying element 12.

[0274] In particular, filling area 118 and contact area 125 have essentially the same areal extensions and essentially the same shape. In particular, these areas 118, 125 are essentially the same except that contact area 125 and filling area 118 are shifted with respect to each other in axial direction of connection axis 128.

[0275] Contact area 125 corresponds essentially to the surface of amplifying element 12 of connecting side 124.

[0276] For example, connecting side 126 of heat sink element 92 is larger, in particular with respect to a radial extension with respect to optical axis 26 and a connection axis 128 of the arrangement of soldering joint 112, than connecting side 124 of amplifying element 12.

[0277] Within this embodiment, contact area 127 at connecting side 126 of heat sink element 92 corresponds essentially to a projection of connecting side 124 of amplifying element 12 onto the surface of connecting side 126 of heat sink element 92.

[0278] Connection section 122 extends in particular areally between amplifying element 12 and heat sink element 92.

[0279] Preferably, connection section 122 extends essentially transverse to connection axis 128, in particular with essentially the same radial extension as amplifying element 12.

[0280] Connection axis 128 is an axis with respect to the arrangement of soldering joint 112.

[0281] Preferably, connection axis 128 runs at least approximately parallel to optical axis 26, in particular both axes 128 and 26 coincide.

[0282] An extension of connection section 122 in a radial direction with respect to connection axis 128 is much larger, for example at least five times larger, than an extension of connection section 122 in an axial direction with respect to connection axis 128.

[0283] Connecting sides 124 and 126 of amplifying element 12 and heat sink element 92 are arranged adjacently to each other with connection section 122 extending in between the connecting sides 124 and 126. With respect to the axial direction of connection axis 128 amplifying element 112, connection section 122 and heat sink element 192 are arranged successively.

[0284] Via the soldering filling composition 114 connecting sides 124 and 126 of amplifying element 12 and heat sink element 92 are adhesively connected.

[0285] In particular, connecting side 124 of amplifying element 12 is covered with a metallization coating 132. Metallization coating 132 comprises at least one metal and in particular strengthens soldering joint 112.

[0286] Preferably, connecting side 126 of heat sink element 92 is covered with a metallization coating 134. Metallization coating 134 comprises at least one metal and in particular strengthens soldering joint 112.

[0287] In the present embodiment, connecting side 124 of amplifying element 12, in particular its surface, extends essentially in a geometrical reference plane 144. Geometrical reference plane 144 runs in particular at least approximately perpendicular to connection axis 128.

[0288] Connecting side 126 of heat sink element 92, in particular its surface, extends, at least within contact area 127, essentially within a geometrical reference plane 146.

[0289] Geometrical reference plane 146 runs in particular at least approximately perpendicular to connection axis 128.

[0290] Preferably, geometrical reference planes 144 and 146 of the connecting sides 124 and 126 run essentially parallel to each other.

[0291] In particular, connecting side 124 of amplifying element 12 corresponds to the side of amplifying element 12 at which high reflective layer 72 is arranged.

[0292] Accordingly, in the present embodiment at one of two opposing sides of high reflective layer 72, high reflective layer 72 touches laser active body 52 and on the other side of the two opposing sides high reflective layer 72 is covered with metallization coating 132.

[0293] Soldering joint 112 has been produced by laser soldering, in particular by a method as explained below.

[0294] Accordingly, during the connection process heat sink element 92 and amplifying element 12 have essentially not been heated up and accordingly heat sink element 92 and amplifying element 12 are essentially free of, in particular thermal induced, stresses and do essentially not exhibit distortions, in particular thermal induced, distortions.

[0295] Due to the laser soldering advantageously solder filling composition 114 is essentially free of inclusions of pollutants, for example free of gaseous blisters, such as gas pockets.

[0296] In connection with the explanations and in the figures regarding a second embodiment of a radiation field amplifying system 10 parts and elements which are identical to those of the first embodiment or have the same function basically are designated with the same reference sign and with respect to the explanations of these parts and elements it is fully referred to the explanations given in connection with the first embodiment unless in the following a variation of these parts and elements is described.

[0297] In contrast to the first embodiment, in the second embodiment at least one of the connecting sides 124, 126, preferably both connecting sides 124 and 126, of amplifying element 12 and heat sink element 92 is/are, in particular with respect to the respective geometrical reference plane 144, 146, for example slightly, bended.

[0298] Exemplarily, a connection of amplifying element 12 and heat sink element 92 with a soldering joint 112 according to the second embodiment is shown in FIG. 3 in which the bending is extremely enhanced illustrated for the sake of a clearer visibility.

[0299] In particular, connecting side 124 of amplifying element 12 is convex shaped.

[0300] Preferably, a mean radius of curvature of connecting side 124 of amplifying element 12, in particular of its surface, is in the range between 1 m and 5 m.

[0301] Connecting side 126 of heat sink element 92 is preferably, at least within contact area 127, concave shaped.

[0302] For example, the surface of connecting side 126 of heat sink element 92 essentially touches geometrical reference plane 146 at connection axis 128 and the surface bends away from geometrical reference plane 146 towards amplifying element 12 upon increasing a radial distance from connection axis 128.

[0303] Accordingly, a distance from the surface of heat sink element 92 at connecting side 126 to geometrical reference plane 146 increases upon increasing the radial distance from connection axis 128.

[0304] For example, a mean radius of curvature of bending of the connecting side 126 of heat sink element 92, in particular of its surface, is in the range between 1 m and 5 m.

[0305] Advantageously, the mean radius of curvature of connecting side 126 of heat sink element 92 is slightly larger, for example at most by 5% larger, than the mean radius of curvature of connecting side 124 of amplifying element 12.

[0306] With that, also connection section 122 is with respect to a geometrical plane, which runs at least approximately perpendicular to connection axis 128, slightly bended.

[0307] Preferably, a thickness of connection section 122, which is measured in axial direction with respect to connection axis 128, increases upon increasing a radial distance from connection axis 128.

[0308] In particular, the thickness corresponds essentially to the distance between the surfaces of connecting sides 124 and 126 of amplifying element 12 and heat sink element 92 and this distance increases upon increasing a radial distance from connection axis 128.

[0309] Due to the production of soldering joint 112 by laser soldering, by which heat sink element 92 and amplifying element 12 are essentially not heated up, essentially no randomly induced bending of amplifying element 12 and/or heat sink element 92 occurs during the connecting process and therefore the geometry of soldering joint 122, in particular the bending of the connection sides 124, 126 of amplifying element 12 and heat sink element 92 and the thickness of connection section 122 can be essentially exactly predefined before the connecting process and are realized essentially with the predefined values after the connecting process.

[0310] For example, radiation field amplifying systems 10 according to the invention are produced with an apparatus which as a whole is designated with 210.

[0311] Apparatus 210 comprises a first supporting device 214 for amplifying element 12, a second supporting device 216 for heat sink element 92 and a radiation field providing system 222 with a radiation field source 224 for a soldering radiation field 226.

[0312] An apparatus 210 is exemplarily shown in FIG. 4.

[0313] First supporting device 214 comprises a supporting structure 232 for supporting, for example fixing, amplifying element 12 during the connecting process.

[0314] In particular, supporting structure 232 comprises an attaching area 234 at which amplifying element 12 is attached.

[0315] Preferably, amplifying element 12 is held by supporting structure 232, in particular at attaching area 234, only by adhesion. That is, advantageously, amplifying element 12 is held clueless and without additional mechanical holders and amplifying element 12 is kept at attaching area 234 only by attaching it to attaching area 234.

[0316] In a variant of the embodiment, additionally or instead a mechanical holding device for holding amplifying element 12 is provided.

[0317] Preferably, attaching area 234 possesses a predefined shape. The predefined shape corresponds to a shape amplifying element 12 should essentially possess after the connecting process.

[0318] In particular, attaching area 234 is slightly bended with a radius of mean curvature being for example in the range between 1 m and 5 m.

[0319] By attaching amplifying element 12, in particular with a side, which is oppositely arranged to connecting side 124, to attaching area 234 amplifying element 12 adopts essentially, in particular due to its thin disc-like shape, the predefined shape according to the shape of attaching area 234.

[0320] In particular, amplifying element 12 adopts a bending, which corresponds to the shape of attaching area 234.

[0321] Second supporting device 216 comprises a supporting structure 236 to support heat sink element 92 during the connecting process. For example supporting structure 236 fixes heat sink element 92 at a particular position.

[0322] First and second supporting devices 214, 216 support amplifying element 12 and heat sink element 92 such that their connecting sides 124, 126 are facing towards each other.

[0323] In particular, first supporting device 214 supports amplifying element 12 such that geometrical reference plane 144 of its connecting side 124 is aligned at least approximately perpendicular to a supporting axis 242 of first and second supporting devices 214, 216.

[0324] In particular, second supporting device 216 supports heat sink element 92 such that geometrical reference plane 146 of connecting side 126 of heat sink element 92 is aligned at least approximately perpendicular to supporting axis 242.

[0325] First and second supporting devices 214 and 216, in particular their supporting structures 232 and 236, are arranged movably to each other, in particular are arranged movably to each other in axial direction with respect to supporting axis 242.

[0326] Radiation field providing system 222 comprises a radiation field source 252, which emits soldering radiation field 226.

[0327] A wavelength of soldering radiation field 226 is selected and adjusted such that solder filling composition 114 exhibits a high absorption rate at the wavelength of soldering radiation field 226 and that the other elements of radiation field amplifying system 10, through which soldering radiation field 226 propagates, are essentially transparent for soldering radiation field 226.

[0328] In the present embodiment, in particular amplifying element 12 is essentially transparent at the wavelength of soldering radiation field 226.

[0329] Additionally, radiation field providing system 222 comprises an optical equipment 254. Optical equipment 254 in particular guides soldering radiation field 226 towards the space between connecting sides 124 and 126 and onto soldering filling composition 114.

[0330] In particular, optical equipment 254 focuses soldering radiation field 226 onto solder filling composition 114.

[0331] In the present embodiment, optical equipment 254 widens a profile of soldering radiation field 226 transverse to a propagation direction of soldering radiation field 226.

[0332] In particular, optical equipment 254 manipulates, for example widens, the transverse profile of soldering radiation field 226, where preferably in a central area 266 of the transverse profile the intensity of soldering radiation field is approximately constant.

[0333] In particular, the extension of central area 266, transverse to supporting axis 242, corresponds essentially to an areal extension of solder filling composition 114, in particular to an areal extension transverse to supporting axis 242 which preferably corresponds to an areal extension transverse to connection axis 128.

[0334] A method for producing an embodiment of radiation field amplifying system 10 proceeds for example as follows and in particular apparatus 210 works as follows.

[0335] Amplifying element 12 is attached to supporting structure 232 of first supporting device 214, in particular at its attaching area 234.

[0336] Preferably, amplifying element 12 obtains thereby a desired overall shape which is in particular induced by supporting structure 232.

[0337] In particular, supporting structure 232 induces a curvature to amplifying element 12 with a desired radius of curvature.

[0338] Heat sink element 92 is attached to supporting structure 236 of second supporting device 216.

[0339] Amplifying element 12 and heat sink element 92 are arranged by supporting structures 232 and 236 with their connecting sides 124 and 126 facing to each other and are in particular aligned with respect to supporting axis 242 in a position as they should be arranged after the production process with respect to connection axis 128 and optical axis 26 except for their distance in axial direction with respect to supporting axis 242 which might be a bit larger before the production process than desired after the production process.

[0340] In particular, amplifying element 12 and heat sink element 92 are arranged by first and second supporting devices 214 and 216 such that geometrical reference planes 144 and 146 of their connecting sides 142 and 126 are aligned at least approximately perpendicular to supporting axis 242.

[0341] In the present embodiment solder filling composition 114 is brought between connecting sides 124 and 126 of amplifying element 12 and heat sink element 92 as a foil.

[0342] In a variation of the embodiment solder filling composition 114 is attached to amplifying element 12 before attaching amplifying element 12 to first supporting device 14. For example solder filling composition 114 is deposited to connecting side 124 by physical thin film deposition.

[0343] In another variation of the method parts of solder filling composition are deposited at one of the connecting sides 124 and 126 and another part of solder filling composition is brought between connecting sides 124 and 126 for example while amplifying element 12 and heat sink element 92 are attached to first and second supporting devices 214 and 216.

[0344] Amplifying element 12 and heat sink element 92 are, in particular by first and second supporting devices 214 and 216, moved towards to each other at least approximately in axial direction with respect to supporting axis 242 such that solder filling composition 114 touches both connecting sides 124 and 126 of amplifying element 12 on one hand and heat sink element 92 on the other hand.

[0345] For example, amplifying element 12 and heat sink element 92 are pressed together.

[0346] Solder filling composition 114 is brought between amplifying element 12 and heat sink element 92, such that solder filling composition 114 fills essentially the whole space between the respective connecting sides 126 and 124.

[0347] Soldering radiation field 226 is directed and focused by optical equipment 254 onto solder filling composition 114. In particular, solder filling composition 114 is along its whole extension in radial direction with respect to supporting axis 242, which essentially corresponds to its radial extension with respect to connection axis 128, exposed to soldering radiation field 226, in particular due to its widened transverse profile.

[0348] In the present embodiment, soldering radiation field propagates through amplifying element 12 and in particular supporting structure 232, and by exiting amplifying element 12 at its connecting side 124 soldering radiation field 226 hits solder filling composition 114 and induces energy into solder filling composition 114 which thereby heats up and melts.

[0349] In a variation of the embodiment soldering radiation field 226 hits solder filling composition 114 from the other side, that is at the side facing towards heat sink element 92, as exemplarily sketched in FIG. 5.

[0350] In the variation, soldering radiation field 226 propagates through heat sink element 92 and in particular supporting structure 136, and exits heat sink element 92 at connecting side 126. There it hits solder filling composition 114 and induces energy to heat up and to melt solder filling composition 114.

[0351] Advantageously, during exposure of solder filling composition 114 to soldering radiation field 226, heat sink element 92 and amplifying element 12 absorb essentially none or only a marginal amount of energy from soldering radiation field 226 and accordingly stay essentially at the temperature they had before exposure to soldering radiation field 226.

[0352] After an exposure time, the duration of which is long enough to completely melt solder filling composition 114, radiation field source 252 is turned off.

[0353] After the exposure to soldering radiation field 226 solder filling composition 114 cools down and soldering joint 112 is established.

[0354] In another embodiment of the method to produce an embodiment of radiation field amplifying system 10, soldering radiation field 226 comprises in its transverse profile a central area 266 at which soldering radiation field 226 transmits most of its energy and central area 266 is smaller than the extension of solder filling composition 114 radial to supporting axis 242, which essentially corresponds to the extension of solder filling composition 114 in radial direction with respect to connection axis 128.

[0355] Accordingly, only a part of solder filling composition 114 is at a same moment in time exposed to soldering radiation field 226.

[0356] In particular, optical equipment 254 directs and focuses soldering radiation field 226 onto an exposure area 274 of soldering joint 112, in particular of solder filling composition 114.

[0357] Within a geometrical projection plane 278 a projection of the part of solder filling composition 114 which is exposed to soldering radiation field 226, in particular the projection of exposure area 274, covers only a, for example small, part of the area of the projection of the whole of solder filling composition 114 onto geometrical projection plane 278.

[0358] Preferably, geometrical projection plane 278 runs at least approximately perpendicular to supporting axis 242 and runs at least approximately perpendicular to connection axis 128 of to be produced soldering joint 112.

[0359] In particular, by optical equipment 154 soldering radiation field 226 is consecutively with respect to time directed onto each part of solder filling composition 114 and melts the respective part.

[0360] For example, central area 266 extends elongated along a longish direction 286 and its extension at least approximately perpendicular to longish direction 286 is much smaller than its extension within longish direction 286.

[0361] In particular, central area 266 has an extension in longish direction 286 which is longer than the largest extension of solder filling composition 114 radial to supporting axis 242 and connection axis 128 and its extension at least approximately perpendicular to longish direction 286 is only a fraction, for example less than a fifth, of said largest extension of solder filling composition 114.

[0362] Accordingly, only a stripe of solder filling composition 114 is at one moment in time exposed to soldering radiation field 226, as exemplarily sketched in FIG. 6.

[0363] Soldering radiation field 226 is, in particular by optical equipment 254, moved in an exposure direction 288. In particular, exposure direction 188 is at least approximately perpendicular to longish direction 286.

[0364] Accordingly, exposure area 274 is moved in geometrical projection plane 178 essentially in exposure direction 288.

[0365] By moving soldering radiation field 226 in exposure direction 288 each part of solder filling composition 114 is consecutively exposed to soldering radiation field 226 and melted by its induced energy.

[0366] In a variation of the method, exposure area 274 is essentially a spot, for example a circular shaped spot.

[0367] In the variation, the spot of soldering radiation field 226 is consecutively directed all over solder filling composition 114.

[0368] For example, at the beginning, exposure area 274 is aligned essentially central to supporting axis 242 and then consecutively moved in radial direction with respect to supporting axis 242, in particular in an essentially spiral way to outer parts of solder filling composition 114, which are at a radial distance to supporting axis 242.