Gas Sensors

Abstract

We disclose herein a gas sensor comprising a catalyst material; a temperature detector configured to measure a change in temperature of the catalyst material; and a plurality of electrodes configured to measure the current and/or resistance of the catalytic material. The gas sensor can be formed using CMOS or CMOS-SOI technologies.

Claims

1. A gas sensor comprising: a catalyst material; a temperature detector configured to measure a change in temperature of the catalyst material; and a plurality of electrodes configured to measure the current and/or resistance of the catalytic material.

2. A gas sensor according to claim 1, wherein the plurality of electrodes forms an interdigitated electrode array.

3. A gas sensor according to claim 2, wherein the interdigitated array is in contact with the catalytic material.

4. A gas sensor according to claim 1, wherein the temperature detector is a thermopile, or wherein the temperature detector is a temperature diode.

5. A gas sensor according to claim 1, wherein the gas sensor is configured to provide a calorimetric output, and a resistive or capacitive output.

6. A gas sensor according to claim 5, wherein the gas sensor is configured such that the temperature detector provides the calorimetric output and the plurality of electrodes provide the resistive or capacitive output.

7. A gas sensor according to claim 5, wherein the calorimetric output is provided at a first temperature, and the resistive or capacitive output is provided at a second temperature.

8. A gas sensor according to claim 5, wherein the calorimetric output and the resistive output are provided at the same temperature.

9. A gas sensor according to claim 1, further comprising a heater.

10. A gas sensor according to claim 9, wherein the heater is a microheater.

11. A gas sensor according to claim 9, wherein the heater comprises a Peltier heater switchable between two configurations.

12. A gas sensor according to claim 11, wherein in a first configuration a current of a first polarity through the heater produces a heating effect, and wherein in a second configuration a current of a second polarity through the heater produces a cooling effect, and wherein the first polarity and the second polarity are opposite polarities.

13. A gas sensor according to claim 9, wherein the gas sensor is configured to operate the heater such that at least two different gases are detected at different temperatures.

14. A gas sensor according to claim 13, wherein the catalyst material is formed on the dielectric layer and wherein the area of the catalyst material extends throughout the entire dielectric membrane area.

15. A gas sensor according to claim 1, further comprising: a semiconductor substrate comprising a substrate portion and an etched cavity portion; a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane area, wherein the dielectric membrane area is adjacent to the etched cavity portion of the substrate.

16. A gas sensor according to claim 15, wherein the temperature detector comprises a thermopile which comprises a plurality of thermocouples coupled in series, and wherein at least one thermocouple comprises first and second thermal junctions, and wherein the first thermal junction is a hot junction and the second thermal junction is a cold junction, and wherein the hot junction is located within the dielectric membrane area and wherein the cold junction is located outside the dielectric membrane area.

17. A gas sensor according to claim 1, wherein the gas sensor further comprises: a reference material, wherein the reference material has substantially similar thermo-conductivity properties as the catalytic material, but is configured to not act as a catalyst for a specified gas reaction; a second temperature detector configured to measure a change in temperature of the reference material; and a plurality of electrodes configured to measure the current and/or resistance of the reference material.

18. A gas sensor according to claim 1, wherein the gas sensor further comprises: a second catalytic material, wherein the second catalytic material is a different material to the catalytic material; a second temperature detector configured to measure a change in temperature of the second catalytic material; and a plurality of electrodes configured to measure the current and/or resistance of the second catalytic material.

19. A gas sensor according to claim 1, wherein the gas sensor further comprises a second temperature detector, and wherein the second temperature is configured to measure a change in the ambient temperature.

20. A method of manufacturing a gas sensor, the method comprising: forming a plurality of electrodes; forming a temperature detector; and depositing a catalytic material coupled with the plurality of electrodes.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Some preferred embodiments of the disclosure will now be disclosed by way of example only and with reference to the accompanying drawings, in which:

[0034] FIG. 1 illustrates a gas sensor according to the state-of-the-art;

[0035] FIG. 2 illustrates an alternative gas sensor according to the state-of-the-art;

[0036] FIG. 3 shows an energy level diagram corresponding to an example reaction in a calorimetric gas sensor;

[0037] FIG. 4 illustrates a cross section of a gas sensor according to one embodiment of the present disclosure;

[0038] FIG. 5 illustrates a cross section of a gas sensor according to an alternative embodiment of the present disclosure;

[0039] FIG. 6 illustrates a cross section of a gas sensor according to an alternative embodiment of the present disclosure;

[0040] FIG. 7 illustrates a cross section of a gas sensor which has a flip-chip configuration, according to an alternative embodiment of the present disclosure;

[0041] FIG. 8 illustrates a cross section of a gas sensor which has a reference structure, according to an alternative embodiment of the present disclosure;

[0042] FIG. 9 illustrates a cross section of a gas sensor with a second temperature detector, according to an alternative embodiment of the present disclosure; and

[0043] FIG. 10 illustrates an exemplary flow diagram outlining the manufacturing method of the gas sensor.

DETAILED DESCRIPTION

[0044] Some examples of the device are given in the accompanying figures.

[0045] FIG. 4 shows a cross section of a gas sensor according to one embodiment of the present disclosure. The gas sensor 100 comprises a dielectric layer 110 supported by a semiconductor substrate which has an etched portion 115 and a substrate portion 105. In one example, the semiconductor substrate can be made of silicon or silicon carbide. The dielectric layer 110 has a dielectric membrane region 120, which is located immediately adjacent to or above or over the cavity 115 of the substrate 105. The dielectric layer 110 can be made from a material such as silicon oxide, nitride, or oxinitride. The dielectric membrane area 120 corresponds to the area of the dielectric layer 110 directly above or below the etched portion 115. The substrate is etched by DRIE to form the cavity 115.

[0046] A gas sensing catalytic material 125 is deposited or grown on the dielectric membrane 120. Interdigitated electrodes 130 are formed below the catalytic material 125, on or within the dielectric membrane 120. The gas sensing material 125 makes electrical contact to the interdigitated electrodes 130. The electrodes 130 are configured to measure resistance and/or capacitance of the gas sensing material 125. The catalytic gas sensing material 125 is a material that changes its resistance/capacitance in the presence of the gas to be sensed. The membrane structure serves to thermally isolate the gas sensitive layer 125 and heater 140 to significantly reduce the power consumption.

[0047] A heater 140 and heater tracks (not shown) are embedded within the dielectric layer 110, which when powered raises the temperature of the gas sensing catalytic layer 125. The heater 140 heats the sensitive layer 125 to a certain temperature used for a chemical or physical reaction to a gas. In this embodiment, the heater 140 is formed within the dielectric membrane area 120 and the heater 140 is a micro-heater and can be made from a metal such as Tungsten, Platinum, or Titanium.

[0048] A thermopile 135 is embedded within the dielectric layer 110. The thermopile 135 is configured to measure the heat generated by reactions of analytes on the surface of the dielectric layer 110. The thermopile 135 comprises a number of thermocouples connected in series with their hot junctions (sensing junctions) embedded within a membrane, or other thermally isolating structure, and their cold junctions (reference junctions) located outside the membrane area 120.

[0049] The heater 140 can control the temperature of the catalyst 125. This configuration allows a sensor with a dual output. The sensor 100 will produce calorimetric and resistive signals. At low temperatures the sensor 100 acts as a calorimetric sensor and detects gas by measuring the change in temperature using the thermopiles 135. At higher temperatures the sensor 100 acts as a resistive sensor and detects gas by measuring the change in resistance/capacitance of the gas sensing material 125. For instance, at low temperatures, calorimetric output can be used as a selective sensor for carbon monoxide or hydrogen, while at a high temperature the resistive output can be used as a sensor for a broad range of volatile organic compounds.

[0050] The microheater may be replaced with a Peltier cooler, heater, or thermoelectric heat pump. This is a solid-state active heat pump which transfers heat from one side of the device to the other, with consumption of electrical energy, depending on the direction of the current. The temperature can be controlled by switching the current polarity to generate either heating or cooling as desired.

[0051] FIG. 5 shows a cross section of a gas sensor according to an alternative embodiment of the present disclosure. Many of the features are the same as those shown in FIG. 4 and therefore carry the same reference numerals. In this example, the catalyst 125 extends across the entire area of the dielectric membrane area 120. Having a catalyst 125 substantially (or almost) the same or similar size as the dielectric membrane 120 improves the performance of the device.

[0052] FIG. 6 shows a cross section of a gas sensor according to an alternative embodiment of the present disclosure. Many of the features are the same as those shown in FIG. 4 and therefore carry the same reference numerals. In this embodiment both the hot and cold junctions of the thermopile 135 are formed within the dielectric membrane area 120. This produces a smaller response than having the cold junction outside of the dielectric membrane 120.

[0053] FIG. 7 illustrates a cross section of a gas sensor which has a flip-chip configuration, according to an alternative embodiment of the present disclosure. Many of the features are the same as those shown in FIG. 4 and therefore carry the same reference numerals. The gas sensor 100 is formed in a flip-chip configuration. The gas sensor can be placed above a circuit (e.g. an application specific integrated circuit (ASIC) or printed circuit board (PCB)), using Solder balls, solder bumps, copper pillars, or stud bumps 150 for connection. The solder balls 150 are typically placed on solderable pads, 155, and can be formed within the CMOS process or post-CMOS at wafer level or chip level on both the IR device and the ASIC. This embodiment has the advantage that device can be manufactured such that the thermopile 135 is closer to the circuit, therefore reducing noise and improving device response.

[0054] FIG. 8 illustrates a cross section of a gas sensor which has a reference structure 170, according to an alternative embodiment of the present disclosure. Many of the features are the same as those shown in FIG. 4 and therefore carry the same reference numerals. The gas sensing device has a second membrane area 165. Over the second membrane area 165 there is deposited a reference material 160. The reference material is a material which mimics the thermo-conductivity properties of the catalytic material without catalyzing any gas reaction. The reference structure 170 allows compensation for ambient temperature fluctuations.

[0055] FIG. 9 illustrates a cross section of a gas sensor with a second temperature detector, according to an alternative embodiment of the present disclosure. Many of the features are the same as those shown in FIG. 4 and therefore carry the same reference numerals. The gas sensing device has a second temperature detector 175, this can be a temperature resistive detector (thermopile) or a temperature diode. This temperature detector 170 is located on the bulk of the silicon substrate 105 to measure and account for the ambient temperature fluctuations.

[0056] FIG. 10 illustrates an exemplary flow diagram outlining the manufacturing method of the gas sensor.

[0057] In step 1 (S1), a plurality of electrodes are formed.

[0058] In step 2 (S2), a temperature detector is formed.

[0059] In step 3 (S3), a catalytic, gas sensing material layer is formulated and deposited. The catalytic material may be a paste which is deposited on a device by a dispenser, and then annealed.

[0060] The skilled person will understand that in the preceding description and appended claims, positional terms such as top, bottom, above, overlap, under, lateral, etc. are made with reference to conceptual illustrations of a sensor, such as those showing standard cross-sectional perspectives and those shown in the appended drawings. These terms are used for ease of reference but are not intended to be of limiting nature. These terms are therefore to be understood as referring to a device when in an orientation as shown in the accompanying drawings.

[0061] Although the disclosure has been described in terms of preferred embodiments as set forth above, it should be understood that these embodiments are illustrative only and that the claims are not limited to those embodiments. Those skilled in the art will be able to make modifications and alternatives in view of the disclosure which are contemplated as falling within the scope of the appended claims. Each feature disclosed or illustrated in the present specification may be incorporated in the disclosure, whether alone or in any appropriate combination with any other feature disclosed or illustrated herein.