CERAMIC SWITCH TILE AND MANUFACTURING METHOD

Abstract

The present invention relates to a ceramic switch tile that has the function of a capacitive switch or pushbutton that can be used in pushbuttons, keyboards or other applications, and is made entirely of ceramic materials forming a single block. Specifically, the tile comprises a non-conductive ceramic support (1); areas with a conductive ceramic layer (2), deposited making contact with one side of the non-conductive ceramic support (1) and separated from each other, each area with a conductive ceramic layer (2) comprising a connection sector (6), intended to be connected to a capacitance variation measurement module (5), configured to control electrical devices to be switched; and a protective glazing layer (3), which covers the areas with the conductive ceramic layer (2) and the rest of the non-conductive ceramic support (1) on the same side, except for the connection sectors (6).

Claims

1. A ceramic switch tile, comprising: a non-conductive ceramic support (1), one or more areas with a conductive ceramic layer (2), arranged making contact with one face of the non-conductive ceramic support (1) and separated from each other, the areas with a conductive ceramic layer (2) being equipped with a connection sector (6) intended to be connected to a capacitance variation measurement module (5), configured to control an electrical device to be switched, and a protective glazing layer (3), arranged covering the areas with the conductive ceramic layer (2) and the non-conductive ceramic support (1), except for the connection sectors (6).

2. The tile of claim 1, comprising a single area with a conductive ceramic layer (2).

3. The tile of claim 1, comprising two areas with a conductive ceramic layer (2).

4. The tile of claims 1 to 3, wherein the non-conductive ceramic support (1) is made of a natural material selected between clays, feldspars, kaolin and carbonates.

5. The tile of claims 1 to 3, wherein the non-conductive ceramic support (1) is made of a synthetic material selected between mullite, cordierite and spinel.

6. The tile of claims 1 to 3, wherein the non-conductive ceramic support (1) is made from a mixture of natural clays and a material selected between feldspars, carbonates and kaolins.

7. The tile of claims 1 to 3, wherein the conductive ceramic layer (2) is made of antimony-doped tin oxide, or zinc oxide doped with aluminium, indium, iron or gallium, together with sintering additives.

8. The tile of claims 1 to 3, wherein the protective glazing layer (3) is made of an inorganic material selected between kaolin, ceramic frits and pigments.

9. The tile of claims 1 to 3, further comprising an engobe layer (7) positioned between the non-conductive ceramic support (1) and the areas with the conductive ceramic layer (2).

10. The tile of claims 1 to 3, further comprising an engobe layer (7) positioned between the areas with the conductive ceramic layer (2) and the glazing layer (3).

11. A method for manufacturing the ceramic switch tile, of any of the preceding claims, comprising the steps of: forming the raw non-conductive ceramic support (1), comprising the sequenced sub-steps of: grinding of a mixture of raw materials, pressing, curing, preparing the conductive ceramic layer (2) from a solid solution of antimony oxide and tin oxide, and comprising the sub-steps of: calcination of the antimony oxide and the tin oxide, wet grinding the solid solution to form an aqueous suspension, together with additives, preparing the glazing layer (3) from inorganic raw materials, comprising the sub-steps of: wet grinding the inorganic raw materials together with rheological additives to obtain a stable suspension, and deposition of one or more areas with a conductive ceramic layer (2) and of the glazing layer (3), and sintering.

12. The method of claim 11, wherein the pressing in the step of forming the raw non-conductive ceramic support (1) is carried out at pressures comprised between 100 kg.Math.cm.sup.2 and 500 kg.Math.cm.sup.2.

13. The method of claim 11, additionally comprising a step of preparing the engobe layer (7) from inorganic raw materials, which are wet ground together with rheological additives to obtain a stable suspension.

14. The method of claim 11, wherein the calcination of the oxides in the step of preparing the conductive ceramic layers (2) is carried out at temperatures between 600 C. and 1300 C., with residence times between 1 and 8 hours.

15. The method of claim 11, wherein the depositing and sintering step comprises the sub-steps of: sintering of the non-conductive ceramic support (1), depositing of the areas with the conductive ceramic layer (2) making contact with the non-conductive ceramic support (1) and second sintering, depositing of the glazing layer (3) on the face of the non-conductive ceramic support (1) where the areas with the conductive ceramic layer (2), (1) have been deposited and third sintering.

16. The method of claim 11, wherein the depositing and sintering step comprises the sub-steps of: depositing of the areas with the conductive ceramic layer (2) making contact with the non-conductive ceramic support (1), depositing of the glazing layer (3) on the face of the non-conductive ceramic support (1) where the areas with the conductive ceramic layer (1) have been deposited, and joint sintering.

17. The method of claim 11, comprising a final step of printing letters, numbers and/or symbols on the glazing layer (3).

Description

DESCRIPTION OF THE DRAWINGS

[0037] As a complement to the description provided herein, and for the purpose of helping to make the features of the invention more readily understandable, in accordance with a preferred practical exemplary embodiment thereof, said description is accompanied by a set of drawings constituting an integral part of the same, which by way of illustration and not limitation, the following has been represented:

[0038] FIG. 1.Shows a schematic view of the ceramic switch tile connected to the measurement module.

[0039] FIGS. 2A and 2B.Show an embodiment of the tile without an engobe layer.

[0040] FIGS. 3A and 3B.Show an embodiment of the tile with an engobe layer between the non-conductive ceramic support and the conductive ceramic layer.

[0041] FIGS. 4A and 4B.Show an embodiment of the tile with an engobe layer between the conductive ceramic layer and the glazing layer.

[0042] FIG. 5.Shows an embodiment of the tile as a multiple switch.

[0043] FIG. 6.Shows an embodiment of the tile as an alphanumeric keyboard.

PREFERRED EMBODIMENT OF THE INVENTION

[0044] A preferred embodiment of the ceramic switch tile is described below with the help of FIGS. 1 to 6.

[0045] As shown in FIG. 1, the tile comprises a non-conductive ceramic support (1), which can be made of a natural material such as clay, feldspar, kaolin or carbonate, or a synthetic material such as mullite, cordierite or spinel. Preferably, the non-conductive ceramic support (1) will be made from a mixture of natural clays with the addition of feldspars, carbonates or kaolin.

[0046] As examples, if a non-conductive ceramic support (1) of the red coating type is to be obtained, it is prepared from a mixture mainly made up of clays rich in iron oxide and calcium carbonate, while if a non-conductive ceramic support (1) of the porcelain stoneware type is to be obtained, a mixture mainly made up of white clays and feldspars is used.

[0047] Making contact with the non-conductive ceramic support (1), one or more areas with a conductive ceramic layer (2) are deposited separated from each other, made up of antimony-doped tin oxide, together with sintering additives that allow electrical continuity to be obtained after a sintering treatment.

[0048] Specifically, the conductive ceramic layer (2) can be formulated from 14.5 g of a solid solution of tin and antimony oxides (99% SnO.sub.2 and 1% Sb.sub.2O.sub.3, in molar percentages), g of a commercial aqueous dispersion of antimony tin oxide nanoparticles and 0.5 g of a commercial transparent paving frit. The suspension is applied with a 90 m opening skid on the non-conductive ceramic support (1) forming a 416 cm band in this case. The geometry of the conductive ceramic layer (2) can be adjusted to the requirements of the final design.

[0049] In the embodiment shown in FIG. 1, an embodiment is shown with two areas with a conductive ceramic layer (2) making contact with the non-conductive ceramic support (1), separated by a discontinuity (4), so that each area with conductive ceramic layer (2) forms the electrodes of a capacitor.

[0050] The discontinuity (4) can have a variable width, for example 0.5 mm wide and can be carried out, either with a cutting tool, separating a single conductive ceramic layer (2), giving rise to two areas of the conductive ceramic layer (2) separated from each other, or by directly depositing the conductive ceramic layer (2) in two parallel areas, separated from each other, by means of the usual techniques of ceramic decoration.

[0051] As shown in FIG. 5, in one aspect of the invention, the tile can comprise more than two areas with a conductive ceramic layer (2), for using the tile as a multiple switch/pushbutton.

[0052] This can be carried out using common techniques in ceramic decoration (airbrushing, screen printing or digital ink injection), the areas with a conductive ceramic layer (2) being deposited in different areas of the non-conductive ceramic support (1), thus creating several switches, which can be independently wired to control different external devices. Thus, switch banks arranged on the same or several tiles can be used, as the object of the invention, for various light sources, or as a bell panel in a building.

[0053] Furthermore, as shown in FIG. 6, and using digital ink injection technology, the areas with conductive ceramic layer (2) can be arranged to form a ceramic keyboard. Thus, the areas with a conductive ceramic layer (2) are conveniently arranged on the non-conductive ceramic support (1), generating independent circuits for the keyboard.

[0054] Each of the areas with a conductive ceramic layer (2) comprises a connection sector (6) intended to be connected to a capacitance measurement system that controls the electrical system to be switched.

[0055] The connection sectors (6) can be arranged on the non-conductive ceramic support (1), as shown in the embodiments of FIGS. 2A, 3A and 4A, or on one side of the non-conductive ceramic support (1), as shown in FIGS. 2B, 3B and 4B.

[0056] The tile further comprises a protective glazing layer (3), with an adequate coefficient of expansion and low reactivity with tin oxide, deposited making contact with the areas with the conductive ceramic layer (2), on the same side of the non-conductive ceramic support (1), except for the connection sectors (6), which remain uncovered.

[0057] The glazing layer (3) protects the areas having the conductive ceramic layer (2). Numbers, letters and/or symbols can be printed on the glazing layer (3) by depositing a coloured ceramic ink.

[0058] The glazing layer (3) can be formulated with different frits depending on the type of finish to be had (glossy, matte, transparent, opaque). In this example, the same transparent frit that was part of the conductive ceramic layer (2) was used, with added percentages of 7% kaolin, 0.3% carboxymethylcellulose as adhesive and 0.3% sodium tripolyphosphate as deflocculant. The suspension is carried out in water with a 70% solids content. The mixture is ground for fifteen minutes in a ball mill at 230 rpm, obtaining a suspension that is applied by spraying on the non-conductive ceramic support (1), after having previously deposited the areas with the conductive ceramic layer (2).

[0059] Finally, as shown in FIG. 1, the areas with a conductive ceramic layer (2) are intended to be connected to a capacitance variation measurement module (5), configured to measure capacitance variations that occur in the tile when an object, hand or finger is moved closer to one of the ceramic electrodes formed by the areas with a conductive ceramic layer (2) or to the discontinuity (4) that separates them.

[0060] The proposed tile makes it possible to manufacture variable capacitors (ceramic electrodes) in which when the hand or finger is moved closer they modify their capacity, which can be increased between values of 1 pF.Math.cm.sup.2 and 200 pF.Math.cm.sup.2.

[0061] Thus, with the capacitance variation measurement module (5) and once a threshold range has been set for the tripping of the ceramic switch tile, a light can be activated permanently until a new pulse is reached, or the tile can be used in pushbutton mode, so that it is activated only when it is pressed, a very useful aspect when designing more complex devices such as those in FIGS. 5 and 6.

[0062] Optionally, the tile can comprise an engobe layer (7). FIGS. 2A and 2B show an embodiment of the tile without this layer. FIGS. 3A and 3B show an embodiment in which the engobe layer (7) is arranged between the non-conductive ceramic support (1) and the conductive ceramic sheets (2). FIGS. 4A and 4B show an alternative embodiment in which the engobe layer (7) is arranged between the conductive ceramic sheets (2) and the glazing layer (3). The conductive ceramic layer (2) could also be located between two engobe layers (7).

[0063] It is also the object of the present invention a method for manufacturing the ceramic switch tile, which comprises a series of steps described below.

[0064] A first step consists of forming the non-conductive ceramic support (1), and which can be carried out by means of various methods (pressing, extrusion, casting, etc.), but given the predominantly flat geometry of the tile, it will preferably be done by unidirectional dry pressing.

[0065] To carry it out, a mixture of selected raw materials is ground to homogenise same and reduce the particle size. Grinding can be carried out by a dry method followed by a granulation step, or a wet method followed by a spray-drying step. By both methods, a powder with sufficient fluidity to feed a press mould can be obtained.

[0066] Next, pressing is carried out, at pressures preferably comprised between 100 kg.Math.cm.sup.2 and 500 kg.Math.cm.sup.2 depending on the nature of the non-conductive ceramic support (1). If it is mostly clayey, the preferred interval is between 250 kg.Math.cm.sup.2 and 400 kg.Math.cm.sup.2. Once the non-conductive ceramic support (1) has been formed, it is cured.

[0067] If included, the engobe layer (7) is preferably prepared from inorganic raw materials, such as white clay and ceramic frits, suitably chosen so that its coefficient of expansion is intermediate between the non-conductive ceramic support (1) and the glazing layer (3). The inorganic raw materials are wet ground together with rheological additives to obtain a stable suspension.

[0068] The conductive ceramic sheet(s) (2) are prepared from a solid solution of antimony oxide and tin oxide, in suitable molar proportions (the ratio Sb.sub.2O.sub.3/SnO.sub.2 can vary between 0.1/99.9 to 5/95, but preferably between 1/99 and 3/97 would be used).

[0069] The solid solution is prepared by calcination of the oxides at temperatures between 600 C. and 1300 C., but preferably between 800 C. and 1100 C., with residence times at maximum temperature between 1 and 8 hours.

[0070] Once synthesised, the solid solution is wet ground to form an aqueous suspension, together with additives. In this case, in addition to rheological additives, others are included to facilitate its sintering during firing (preferably a ceramic frit compatible with the glazing layer (3)).

[0071] The glazing layer (3) is prepared from inorganic raw materials that are preferably kaolin, ceramic frits, and pigments that give it the final colour. The inorganic raw materials are wet ground together with rheological additives to obtain a stable suspension.

[0072] Once the raw non-conductive ceramic support (1) has been prepared, together with the three precursor suspensions of the three layers (engobe layer (7), conductive ceramic layer (2) and glazing layer (3)), various strategies can be adopted to finish the ceramic switch tile.

[0073] In a first more complex strategy, the raw non-conductive ceramic support (1) is sintered, and on the sintered non-conductive support (1) the areas with the conductive ceramic layer (2), the engobe layer (7) and the glazing layer (3) (depending on the desired order) are successively deposited, sintering after each application until the final product is obtained.

[0074] In a second, simpler strategy, the areas with the conductive ceramic layer (2), the engobe layer (7) and the glazing layer (3) are deposited (depending on the desired order) on the raw non-conductive ceramic support (1), and a single sintering step is performed.

[0075] Additionally, intermediate strategies can be designed according to the behaviour of the materials that make up each of the layers (non-conductive ceramic support (1), conductive ceramic layer (2), engobe layer (7) and glazing layer (3)).

[0076] The deposition of the conductive ceramic sheets (2), engobe layer (7) and glazing layer (3) can be carried out using standard techniques in the ceramic tile industry (cascade application, airbrushing, screen printing, digital injection, etc.), choosing the most appropriate one based on the amount of material to be deposited and the complexity of its distribution on the surface of the non-conductive ceramic support (1).

[0077] The method can comprise a final step of printing letters, numbers and/or symbols on the glazing layer (3), as shown in FIG. 6.

[0078] To illustrate the method described, a description of the first strategy is provided below, wherein the non-conductive ceramic support (1) is initially sintered with a firing cycle the maximum temperature of which is chosen based on its nature.

[0079] For example, for red tiles it can be sintered between 1050 C. and 1140 C., while for porcelain stoneware it can be sintered between 1160 C. and 1240 C. On the fired non-conductive ceramic support (1), a suspension of the engobe layer (7) is applied, if applicable, and after curing, it is sintered with a cycle similar to that used to sinter the non-conductive ceramic support (1). On the engobe layer (7), or on the non-conductive ceramic support (1), a suspension of the precursors of the conductive ceramic layer (2) is applied, which are sintered at a temperature of about 100 C. below that used in firing the non-conductive ceramic support (1). On the non-conductive ceramic support, including the areas with the conductive ceramic layer (2), the glazing layer (3) is applied, which is sintered at a temperature similar to that used in the sintering of the conductive ceramic layer (2).