High-frequency half-wave rectifier system of low-harmonicity and high-efficiency

Abstract

A high-frequency half-wave rectifier system of low-harmonicity and high-efficiency, which mainly comprises: a current output device having an output end and a first flow-return end respectively at both ends, a rectifying module, a resonant tuning unit, a first node, a voltage regulator module, at least one load element, a grounding portion, and at least one flow-return path. By means of the above structure, a simple circuit configuration and appropriate capacitance value setting are used to control the duty cycle of the rectifying module to approximately 74 nanoseconds and adjust the output power and improve the AC to DC conversion efficiency for the rectifying module under the low electromagnetic interference condition.

Claims

1. A high-frequency half-wave rectifier system of low-harmonicity and high-efficiency, which mainly comprises: a current output device having an output end and a first flow-return end respectively at both ends for outputting alternating current; a rectifying module connected in series with the output end of the current output device for adjusting an output power; a resonant tuning unit connected in parallel with the rectifying module for controlling a duty cycle of the rectifying module at a predetermined value; a first node located to a side of the first flow-return end farther away from the current output device; a voltage regulator module; wherein one end of the voltage regulator module is connected in series with the rectifying module and the other end is connected to the first node; at least one load element connected in parallel with the voltage regulator module; a grounding portion set in one side of the load element; at least one flow-return path between the first node and the first flow-return end for guiding a current flown out of the voltage regulator module to the current output device; a second flow-return end provided between the output end and the rectifying module; a flow-return unit having two ends connected to the first node and the second flow-return end respectively for guiding the current flown out of the voltage regulator module to the rectifying module; a resonance module set between the output end and the second flow-return end for reducing Electro Magnetic Interference (EMI) of the high-frequency half-wave rectification system; and a resistance element set between the first node and the first flow-return end.

2. The high-frequency half-wave rectifier system of low-harmonicity and high-efficiency according to claim 1, wherein the current output device comprises a wireless receiving unit.

3. The high-frequency half-wave rectifier system of low-harmonicity and high-efficiency according to claim 1, wherein the resonance module comprises a first resonance unit and a second resonance unit end-to-end connected between the output end and the second flow-return end; and the high-frequency half-wave rectifier system further comprises a third resonance unit having an end connected to a node between the first and second resonance units and having the other end connected to a second node in the at least one flow-return path between the first node and the resistance element.

4. The high-frequency half-wave rectifier system of low-harmonicity and high-efficiency according to claim 1, wherein the predetermined value is 48 nanoseconds (ns) to 81 nanoseconds (ns).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a circuit distribution diagram of a conventional AC rectifier circuit.

(2) FIG. 2 is an implementation schematic diagram of the first embodiment according to the present invention.

(3) FIG. 3 is an implementation schematic diagram of the second embodiment according to the present invention.

(4) FIG. 4 is an implementation schematic diagram of the third embodiment according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(5) The following descriptions are exemplary embodiments only, and are not intended to limit the scope, applicability or configuration of the invention in any way. Rather, the following detailed description provides a convenient illustration for implementing exemplary embodiments of the invention. Various changes to the described embodiments may be made in the function and arrangement of the elements described without departing from the scope of the invention as set forth in the appended claims.

(6) The foregoing and other aspects, features, and utilities of the present invention will be best understood from the following detailed description of the preferred embodiments when read in conjunction with the accompanying drawings.

(7) As shown in FIG. 2, the high-frequency half-wave rectification system 1 of the present invention mainly comprises: a current output device 2 having an output end 21 and a first flow-return end 22 respectively at both ends for outputting alternating current, and the current output device 2 comprises a wireless receiving unit 23, wherein the wireless receiving unit 23 is an inductance element; a rectifying module 3 connected in series with the output terminal 21 (represented by a diode in this embodiment) for adjusting the output power, wherein a second flow-return end 711 is provided between the output end 21 and the rectifying module 3; a resonant tuning unit 4 connected in parallel with the rectifying module 3 for controlling the duty cycle of the rectifying module 3 to a predetermined value, wherein the predetermined value of the duty cycle is 48 nanoseconds (ns) to 81 nanoseconds (ns); a first node P1 defined in one side of the first flow-return end 22 facing away from the current output device 2; a voltage regulator module 5, wherein one end of the voltage regulator module 5 is connected in series with the rectifying module 3 and the other end is connected to the first node P1; at least one load element 6 connected in parallel with the voltage regulator module 5; a grounding portion 61 set in one side of the load element 6; at least one flow-return path 7 defined between the first node P1 and the first flow-return end 22 for guiding the current flown out of the voltage regulator module 5 to the current output device 2; wherein the flow-return path 7 has a flow-return unit 71 having two ends connected to the first node P1 and the second flow-return end 711 respectively for guiding the current flown out of the voltage regulator module 5 to the rectifying module 3; a resonance module 8 set between the output end 21 and the second flow-return end 711 for reducing the electromagnetic interference (EMI) of the high-frequency half-wave rectification system 1; and a resistance element 9 set between the first node P1 and the first flow-return end 22.

(8) With the aforementioned structure of the components, it can clearly be seen from the figure that this embodiment is mainly applied to a high-frequency rectification system of a megahertz level. In addition, due to the small size of the current wearable electronic device, in the high-frequency half-wave rectification system 1 of the E class AC circuit, a flow-return unit 71 is added to the flow-return path 7 of the voltage regulator module 5 and the load element 6; and so as to improve conversion efficiency of the current output device 2.

(9) Practically speaking, the current output device 2 outputs a current from the output end 21 and then flows to the rectifying module 3 connected in series therewith, and is connected to the flow-return unit 71 at the second flow-return end 711 in the middle. However, in a megahertz high-frequency circuit, the flow-return unit 71 (inductor) is a high-impedance element, and the current flows to the rectifying module 3 and the resonant tuning unit 4 connected in parallel with each other, wherein the resonant tuning unit 4 can be used to control the duty cycle of the rectifying module 3 to make it close to 74 nanoseconds (ns) (typically it is ideally 48 to 81 nanoseconds (ns) in duty cycle D. In this way, the output power of the rectifying module 3 can be effectively adjusted, and the resonance module 8 can be used to assist the operation of the resonant tuning unit 4 to reduce electromagnetic interference meanwhile. When the current flows through the voltage regulator module 5 and the load element 6 and flows to the flow-return path 7, some part of the current can be routed back to the second flow-return end 711 through the first node P1 and the flow-return unit 71, and again it is tuned by the rectifying module 3 and the resonant tuning unit 4 to increase the overall power conversion efficiency, and the rest of the current is returned to the current output device 2 via the first flow-return end 22.

(10) Wherein, the capacitance value algorithm of the resonance module 8 is as follows:
Zrec=Rrec+jXrec, and Crx=1/(Lrx+Xrec),

(11) Wherein, the resistance value of the load element 6 is Zrec=Rrec+jXrec(Rrec (Rrec is the real load value, jXrec is the imaginary load value), Crx is the capacitance value of the resonance module 8, and Lrx is the inductance of the wireless receiving unit 23.

(12) As shown in FIG. 3, which is more specifically for the low-power electronic equipment (power is below 1 watt, load conditions for RL>100), in the class E AC half-wave rectification circuit, the circuit can be simplified by the technology of the present invention, that is, the flow-return unit is incorporated into the wireless receiving unit 23a, and combined the resonance module into the resonant tuning unit 4a. As for the resonant tuning unit 4a which can control the rectifying module 3a utilizing the technology Lrx+Xrec=0, and the algorithm below to set the capacitance value of the resonant tuning unit 4a.

(13) $C_r=\frac{1+\frac{{\left(\sin 2D+2\left(1-D\right)\right)}^2}{1-\cos 2D}-2{{}^2\left(1-D\right)}^2-\cos 2D}{2\left(R_L+\frac{r_{D_r}}{2}\left(2D-\sin 2D+\left(1-\cos 2D\right)\cot {}_{\mathrm{rec}}\right)\right)}$

(14) Where is the resonance frequency, Lrx is the inductance value of the wireless receiving unit 23a, the resistance value of the load element 6a is RL=Zrec=Rrec+jXrec (Rrec is the real load value, jXrec is the imaginary load value), Cr is the capacitance of the resonant tuning unit 4a, The value D is the duty cycle of the rectifier module 3a, r.sub.Dr is the internal impedance of the rectifier module 3a, and rec is the initial phase of the input sinusoidal current.

(15) As shown in FIG. 4, a resonance module 8b further comprises a first resonance unit 81b set in one side of an output end 21b, a second resonance unit 82b set in one side of a second flow-return end 711b, a second node P2 defined in a flow-return path 7b and between the first node P1 and a resistance element 9b, and a third resonance unit 83b set between the first resonance unit 81b and the second resonance unit 82b; wherein the first resonance unit 81b and the resonance unit 82b are connected in series with each other, and the end of the third resonance unit 83b facing away from the first resonance unit 81b is connected to the second node P2.

(16) In this way, using the first resonance unit 81b, the second resonance unit 82b, and the third resonance unit 83b to more accurately calculate the effective capacitance value of the resonance module 8b, and so as to further improve the work of a auxiliary resonant tuning unit 4b; and at the same time, the electromagnetic interference problem can be reduced, and the problem of low mutual inductance (insufficient success ratio) can also be solved when the mutual inductance is low (K<0.07, where K represents the ratio of the actual mutual inductance of two coils to the maximum mutual inductance).

(17) The capacitance value of the resonance module 8b needs to be calculated based on the input load marked at Zm in the figure, and the algorithm is as follows:

(18) $Z_m=R_m+{\mathrm{jX}}_m$$R_m=\frac{Z_{\mathrm{rec}}}{{}^2{C}_{\mathrm{mnp}}^2{Z}_{\mathrm{rec}}^2+{\left(1+\frac{C_{\mathrm{mnp}}}{C_{\mathrm{mns}}}\right)}^2}$$X_m=-\frac{}{C_{\mathrm{mnp}}}*\frac{Z_{\mathrm{rec}}^2+\frac{C_{\mathrm{mnp}}+C_{\mathrm{mns}}}{{}^2{C}_{\mathrm{mns}}^2{C}_{\mathrm{mnp}}}}{{}^2{Z}_{\mathrm{rec}}^2+{\left(\frac{1}{C_{\mathrm{mnp}}}+\frac{1}{C_{\mathrm{mns}}}\right)}^2}$

(19) Where is the resonant frequency, the resistance value of the load element 6b is Zrec=Rrec+jXrec (Rrec is the real load value, jXrec is the imaginary load value), Cmns is the capacitance value of the second resonance unit 82b, and Cmnp is the third resonance unit 83b.