Abstract
A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-cone interface with low optical quality, while avoiding three flow regions which are inevitable in the crystal growth process by rotating crystal method, including incident flow, side flow and wake flow, and easily cause inclusion formation. The long seed crystal moves periodically in the fresh solution, four cylindrical surfaces can achieve reversible shear flow in one cycle, and any point on the cylindrical surface experiences the same hydrodynamic conditions in one movement cycle, so that the solute supply is sufficient and uniform, the growth velocity is improved, and the stability of morphology is ensured. The method facilitates rapid growth of high quality DKDP crystals and provides a better solution for the large-size, high-quality DKDP crystal growth required by the ICF laser device.
Claims
1. A method for growing long-seed DKDP crystal by two-dimensional motion, comprising: mounting a two-dimensional motion motor on an upper part of a growth tank, and a lower end of the two-dimensional motion motor being connected to a connecting rod of a crystal carrying frame, and driving the crystal carrying frame to periodically translating on a horizontal plane according to a square motion track in a growth solution in the growth tank by the two-dimensional motion motor until growth of the long-seed DKDP crystal ends, wherein a long-seed DKDP crystal is grown in the growth tank.
2. The method of claim 1, wherein the crystal carrying frame is periodically translated on the horizontal plane according to the square motion track uses a motion mode of “performing uniformly accelerated linear motion at an acceleration a from 0—maintaining a uniform linear motion after the velocity reaches V—performing uniformly decelerated linear motion at an acceleration a until the velocity decreases to 0” on all four sides.
3. The method of claim 2, wherein a length of a single side of the square motion is in a range of 50 to 500 mm.
4. The method of claim 2, wherein an accelerated velocity a of the uniformly accelerated linear motion is in a range of 0.01 to 1 m/s.sup.2.
5. The method of claim 2, wherein the velocity V of the uniformly decelerated linear motion is in a range of 0.01-1 m/s.
6. The method of claim 1, wherein a cross-section of the growth tank is square.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] FIG. 1 is a schematic view of a growing device for the method for growing long-seed DKDP crystal by two-dimensional motion according to the present invention, wherein: 1—growth tank; 2—crystal carrying frame connecting rod; 3—crystal carrying frame side bars; 4—long seed; 5—crystal carrying frame tray.
[0012] FIG. 2 shows the comparison of the rotating crystal method and the method for growing long-seed DKDP crystal based on the two-dimensional motion of the present invention in the trend numerical simulation results for the average supersaturation value of the cylindrical surface over time over one period of motion when growing a long-seeded DKDP crystal. The horizontal axis (x) represents normalized time in motion period, and the vertical axis (y) represents the average supersaturation value of cylindrical surface (%).
[0013] FIG. 3 shows the comparison of the rotating crystal method and the method for growing long-seed DKDP crystal based on the two-dimensional motion of the present invention in the trend numerical simulation results for the supersaturation standard deviation of the cylindrical surface over time over one period of motion when growing a long-seeded DKDP crystal. The horizontal axis (x) represents normalized time in motion period, and the vertical axis (y) represents the supersaturation standard deviation of cylindrical surface (%).
DETAILED DESCRIPTION OF THE INVENTION
[0014] The present invention is described in further details in the examples and with reference to the drawings, which are not intended to limit the scope of protection for the present invention.
Example 1
[0015] As shown in FIG. 1, the method for growing long-seed DKDP crystal by two-dimensional motion in the present invention comprises mounting a two-dimensional motion motor on an upper part of a growth tank, and a lower end of the two-dimensional motion motor is connected to a connecting rod of a crystal carrying frame; during the growth process of a long-seed DKDP crystal, driving the crystal carrying frame to periodically translating along a motion track of “A-B-C-D” on a horizontal plane according to a square motion track in a growth solution in the growth tank by the two-dimensional motion motor until the growth of the crystal ends.
[0016] The single side of the square movement of the crystal carrying frame periodically translated on a horizontal plane according to the square motion track adopts a mode of “a single side length of 50 mm, an acceleration a=0.01 m/s.sup.2, and a constant velocity V=0.01 m/s”, and the cross section of the growth tank is square.
Example 2
[0017] As shown in FIG. 1, the method for growing long-seed DKDP crystal by two-dimensional motion of the present invention comprises mounting a two-dimensional motion motor on an upper part of a growth tank, and a lower end of the two-dimensional motion motor is connected to a connecting rod of a crystal carrying frame; during the growth process of a long-seed DKDP crystal, driving the crystal carrying frame to periodically translating along a motion track of “A-D-C-B” on a horizontal plane according to a square motion track in a growth solution in the growth tank by the two-dimensional motion motor until the growth of the crystal ends.
[0018] The single side of the square movement of the crystal carrying frame periodically translated on a horizontal plane according to the square motion track adopts a mode of “a single side length of 500 mm, an acceleration a=1 m/s.sup.2, and a constant velocity V=1 m/s”, and the cross section of the growth tank is square.
Example 3
[0019] As shown in FIG. 1, the method for growing long-seed DKDP crystal by two-dimensional motion comprises mounting a two-dimensional motion motor on an upper part of a growth tank, and a lower end of the two-dimensional motion motor is connected to a connecting rod of a crystal carrying frame; during the growth process of a long-seed DKDP crystal, driving the crystal carrying frame to periodically translating along a motion track of “A-B-C-D” on a horizontal plane according to a square motion track in a growth solution in the growth tank by the two-dimensional motion motor until the growth of the crystal ends.
[0020] The single side of the square movement of the crystal carrying frame periodically translated on a horizontal plane according to the square motion track adopts a mode of “a single side length of 500 mm, an acceleration a=0.01 m/s.sup.2, and a constant velocity V=0.1 m/s”, and the cross section of the growth tank is square.
[0021] FIGS. 2 and 3 show the numerical simulation results comparing the trend of the average supersaturation value and standard deviation of cylindrical surface over time over one period of motion when growing a long-seeded DKDP crystal according to the rotating crystal method and the method for growing long-seed DKDP crystal based on the two-dimensional motion of the present invention. Where the supersaturation degree of the solution is maintained at 5%, the crystal size is 10 mm×10 mm×100 mm (length×width×height) and the cone height is 5 mm. The maximum rotation speed of the rotating crystal method is 40 rpm, and 1 min rotation period of “4 s acceleration −20 s uniform −4 s deceleration −2 s static −4 s reverse acceleration −20 s uniform −4 s deceleration −2 s static” is adopted; the mode of “single side length 100 mm, acceleration a=0.04 m/s.sup.2, uniform velocity V=0.02 m/s” is used for the single side of two dimensional motion of 0.02 m/s, the mode of “single side length 100 mm, acceleration a=0.08 m/s.sup.2, uniform velocity V=0.04 m/s” is used for the single side of two dimensional motion of 0.04 m/s, the mode of “single side length 100 mm, acceleration a=0.16 m/s.sup.2, uniform velocity V=0.08 m/s” is used for the single side of two dimensional motion of 0.08 m/s.
[0022] In the growth process of DKDP crystal, the average supersaturation value of crystal surface reflects the growth velocity of crystal, the larger the average supersaturation value of crystal surface is, the faster the growth velocity of crystal is; the standard deviation of supersaturation reflects the uniformity of supersaturation distribution. The smaller the standard deviation, the better the stability of crystal surface morphology and the higher the quality of grown crystal.
[0023] It can be seen from FIG. 2 that even in the mode with a uniform speed of only 0.02 m/s, the average supersaturation value of the crystal cylindrical surface grown by the two-dimensional motion method has reached the level of the maximum rotation speed of 40 rpm of the rotating crystal method, indicating that the two-dimensional motion growth method has a significant advantage in terms of growth velocity, which can easily exceed the growth velocity of the DKDP crystal grown by the rotating crystal method.
[0024] It can be seen from FIG. 3 that the standard deviations of the supersaturation of the crystal cylindrical surface grown by the two-dimensional motion method are all relatively low, and are significantly lower than the standard deviation of the supersaturation of the crystal cylindrical surface grown by the rotation method at the maximum rotation speed of 40 rpm, indicating that the crystals grown by the two-dimensional motion growth method have obvious advantages in crystal quality, and are better than the crystals grown by the rotating crystal method.
